CN210198999U - Chemical vapor deposition and scanning electron microscope combined equipment - Google Patents
Chemical vapor deposition and scanning electron microscope combined equipment Download PDFInfo
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- CN210198999U CN210198999U CN201920976449.XU CN201920976449U CN210198999U CN 210198999 U CN210198999 U CN 210198999U CN 201920976449 U CN201920976449 U CN 201920976449U CN 210198999 U CN210198999 U CN 210198999U
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Abstract
The utility model relates to a chemical vapor deposition and scanning electron microscope combined device, which comprises a scanning electron microscope sample chamber shell, a scanning electron microscope sample chamber, an electron beam lens cone, a sample stage, a temperature controller, a heating rod, a thermocouple, a differential pressure diaphragm and a gas injection system, wherein the temperature controller is connected with the heating rod and the thermocouple through control lines, and the heating rod and the thermocouple are both arranged in the sample stage; the differential pressure diaphragm is positioned at the outlet of the electron beam lens barrel; the gas injection system comprises a gas injection system shell and a gas pipeline, the gas injection system shell is fixed on a scanning electron microscope sample chamber shell, the gas pipeline is fixed in the gas injection system shell, two ends of the gas pipeline penetrate through the gas injection system shell, a flow meter and a needle valve are arranged on the gas pipeline, and the outlet side of the gas pipeline extends to the position above the sample table. The device can realize real-time observation of the shape change of the material in the growth process, thereby accurately controlling the growth of the material and revealing the growth mechanism of the material, and has great application prospect in the fields of physics and materials science.
Description
Technical Field
The utility model relates to a semiconductor manufacturing auxiliary assembly technical field, in particular to chemical vapor deposition and scanning electron microscope combination equipment.
Background
Under the rapid development of science and technology, the capability of observing the shape change of a material in real time in the growth process of the material is realized, so that the growth mechanism of the material is disclosed and the precise growth of the material is controlled, and the method has important significance in scientific research of materials science and physics.
Chemical Vapor Deposition (CVD) is one of the most widely used methods for growing materials. Scanning Electron Microscopy (SEM) is one of the most widely used material characterization devices. The device has the imaging capability of larger depth of field, wider amplification range and nanoscale or even sub-nanoscale high resolution, can be used for imaging and size measurement of complex and rough surface morphology, and can be used for analyzing the component distribution of some materials by matching with a back scattering electron probe.
Disclosure of Invention
The utility model provides a chemical vapor deposition and scanning electron microscope combined equipment for solving the technical problem that exists among the well-known technology, this equipment can realize observing its appearance change to material growth process in real time.
The utility model discloses a solve the technical scheme that technical problem that exists among the well-known technique took and be:
a chemical vapor deposition and scanning electron microscope combined device comprises a scanning electron microscope sample chamber shell, a scanning electron microscope sample chamber, an electron beam lens barrel, a sample stage, a temperature controller, a heating rod, a thermocouple, a differential pressure diaphragm and a gas injection system, wherein the temperature controller is connected with the heating rod and the thermocouple through a control line, the temperature controller is positioned outside the scanning electron microscope sample chamber, the heating rod and the thermocouple are both arranged in the sample stage, the temperature controller controls the heating rod to work, and the thermocouple feeds back a temperature value to the temperature controller; the differential pressure diaphragm is positioned at the outlet of the electron beam lens barrel and used for keeping the high vacuum state of the electron beam lens barrel; gas injection system includes gas injection system shell and gas piping, gas injection system shell is fixed on scanning electron microscope sample room shell, gas piping fixes in gas injection system shell and both ends all pass gas injection system shell, last flowmeter and the needle valve of being equipped with of gas piping, gas piping's export side extends to sample bench side.
In the above technical solution, preferably, the inlet side of the gas pipeline is provided with a plurality of branch pipelines, and each branch pipeline is provided with a flow meter and a needle valve.
In the above technical solution, preferably, the gas injection system housing is obliquely fixed to the scanning electron microscope sample chamber housing.
In the above technical solution, preferably, the gas injection system housing and the scanning electron microscope sample chamber housing, and the gas pipeline and the gas injection system housing are hermetically connected.
In the above technical solution, preferably, the control line is sealed by a sealing flange at a position where the control line passes through the housing of the sample chamber of the scanning electron microscope, and is used for switching the control line.
The specific working process is as follows:
1. the substrate required by the growth material is fixed on the sample stage;
2. vacuumizing a scanning electron microscope sample chamber;
3. setting a target temperature value through a temperature controller, heating by using a heating rod, measuring the temperature by using a thermocouple and feeding the temperature back to the temperature controller, and continuing heating or stopping heating by using the heating rod until the target temperature required by the growth of the material is reached;
4. through adjusting a needle valve and an observation flowmeter, the proper raw material gas flow in each branch gas pipeline is accurately controlled to reach the position above the sample table;
5. the growth process of the material was observed in real time by SEM.
The utility model has the advantages and positive effects that:
by adopting the technical scheme, the utility model can realize the real-time observation of the shape change of the material in the growth process, thereby revealing the growth mechanism of the material; the utility model discloses the structural design is ingenious, and convenient to use is convenient for operate, has improved work efficiency moreover greatly, has very big demand in material and biological research field, is fit for popularizing and applying.
Drawings
Fig. 1 is a schematic structural diagram of an apparatus provided in a preferred embodiment of the present invention;
fig. 2 is a schematic structural diagram of a gas injection system according to a preferred embodiment of the present invention.
In the figure: 1. scanning an electron microscope sample chamber shell; 2. scanning an electron microscope sample chamber; 3. a sample stage; 4. a heating rod; 5. a thermocouple; 6. an electron beam barrel; 7. a control line; 8. a temperature controller; 9. a differential pressure diaphragm; 10. a gas injection system; 10-1, a flow meter; 10-2, needle valves; 10-3, gas injection system housing; 10-4, a gas pipeline; 10-4-1, branch pipelines; 11-sealing the flange.
Detailed Description
For further understanding of the contents, features and effects of the present invention, the following embodiments are exemplified and will be described in detail with reference to the accompanying drawings:
in the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
Referring to fig. 1 and 2, an embodiment of the present invention provides a combination apparatus for chemical vapor deposition and scanning electron microscope, including a sample chamber housing 1 for scanning electron microscope, a sample chamber 2 for scanning electron microscope, an electron beam tube 6, a sample stage 3, a temperature controller 8, a heating rod 4, a thermocouple 5, a pressure difference diaphragm 9 and a gas injection system 10, wherein the temperature controller 8 is connected with the heating rod 4 and the thermocouple 5 through a control line 7, the temperature controller 8 is located outside the sample chamber 2 for scanning electron microscope, the heating rod 4 and the thermocouple 5 are both arranged in the sample stage 3, the temperature controller 8 controls the heating rod 4 to work, and the thermocouple 5 feeds back a temperature value to the temperature controller 8; the pressure difference diaphragm 9 is positioned at the outlet of the electron beam lens barrel 6 and is used for keeping the high vacuum state of the electron beam lens barrel 6, after gas is introduced into the scanning electron microscope sample chamber 2, the electron beam can just pass through the pressure difference diaphragm 9 because the opening of the pressure difference diaphragm 9 is small, but the speed of the gas diffusing to pass through the pressure difference diaphragm 9 is slow, and the aim of keeping the high vacuum of the lens barrel can be realized by matching with a vacuum pump device which works continuously; the gas injection system 10 comprises a gas injection system shell 10-3 and a gas pipeline 10-4, the gas injection system shell 10-3 is fixed on the scanning electron microscope sample chamber shell 1, the gas pipeline 10-4 is fixed in the gas injection system shell 10-3, two ends of the gas pipeline penetrate through the gas injection system shell 10-3, the gas injection system shell 10-3 can protect and fix the gas pipeline 10-4, a flow meter 10-1 and a needle valve 10-2 are arranged on the gas pipeline 10-4, and the outlet side of the gas pipeline 10-4 extends to the position above the sample stage 3.
As a preferred embodiment, the inlet side of the gas pipeline 10-4 is provided with a plurality of branch pipelines 10-4-1, each branch pipeline 10-4-1 is provided with a flow meter 10-1 and a needle valve 10-2, and the flow meter and the needle valve can be increased or decreased according to the requirements of the type of the introduced gas and the like, so that the proper gas flow can reach the position above the sample stage.
As a preferred embodiment, the gas injection system shell 10-3 is obliquely fixed on the sample chamber shell 1 of the scanning electron microscope, so that the gas injection system shell 10-3 is prevented from blocking electron beams, and gas coming out of the gas pipeline 10-4 is enabled to reach right above the sample table 3.
As a preferable embodiment, the gas injection system shell 10-3 and the shell 1 of the scanning electron microscope sample chamber, and the gas pipeline 10-4 and the gas injection system shell 10-3 are hermetically connected, so as to ensure the sealing of the whole scanning electron microscope sample chamber.
As a preferred embodiment, the control line 7 is connected and sealed by a sealing flange 11 at a position penetrating through the shell 1 of the sample chamber of the scanning electron microscope, and is used for realizing the sealing of the sample chamber 2 of the scanning electron microscope and the switching of the control line 7, and the sealing flange in the embodiment adopts the existing sealing flange which can realize the sealing and the switching of the control line, for example, chinese patent publication No. CN201184465, the patent name "an insulating vacuum sealing flange for high voltage transmission and an electrode used in cooperation with the insulating vacuum sealing flange"; chinese patent publication No. CN206163727U, patent name "connector for power line and control line"; and the like.
The utility model discloses a concrete working process as follows:
1. the substrate required by the growth material is fixed on the sample stage;
2. vacuumizing a scanning electron microscope sample chamber;
3. setting a target temperature value through a temperature controller, heating by using a heating rod, measuring the temperature by using a thermocouple and feeding the temperature back to the temperature controller, and continuing heating or stopping heating by using the heating rod until the target temperature required by the growth of the material is reached;
4. through adjusting a needle valve and an observation flowmeter, the proper raw material gas flow in each branch gas pipeline is accurately controlled to reach the position above the sample table;
5. the growth process of the material was observed in real time by SEM.
The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention in any form, and all the changes and modifications equivalent to any simple modification made by the technical entity of the present invention to the above embodiments are within the scope of the technical solution of the present invention.
Claims (5)
1. The utility model provides a chemical vapor deposition and scanning electron microscope allies oneself with equipment, includes scanning electron microscope sample room shell, scanning electron microscope sample room, electron beam lens cone and sample platform, its characterized in that: the temperature controller is connected with the heating rod and the thermocouple through a control line, the temperature controller is positioned outside the sample chamber of the scanning electron microscope, the heating rod and the thermocouple are both arranged in the sample stage, the temperature controller controls the heating rod to work, and the thermocouple feeds back a temperature value to the temperature controller; the differential pressure diaphragm is positioned at the outlet of the electron beam lens barrel and used for keeping the high vacuum state of the electron beam lens barrel; gas injection system includes gas injection system shell and gas piping, gas injection system shell is fixed on scanning electron microscope sample room shell, gas piping fixes in gas injection system shell and both ends all pass gas injection system shell, last flowmeter and the needle valve of being equipped with of gas piping, gas piping's export side extends to sample bench side.
2. The apparatus of claim 1, wherein the apparatus comprises: the inlet side of the gas pipeline is provided with a plurality of branch pipelines, and each branch pipeline is provided with a flow meter and a needle valve.
3. A combined chemical vapor deposition and scanning electron microscope apparatus according to claim 1 or 2, wherein: and the shell of the gas injection system is obliquely fixed on the shell of the sample chamber of the scanning electron microscope.
4. The apparatus of claim 3, wherein the apparatus comprises: and the gas injection system shell is hermetically connected with the scanning electron microscope sample chamber shell, and the gas pipeline is hermetically connected with the gas injection system shell.
5. The apparatus of claim 1, wherein the apparatus comprises: the control line is connected and sealed by a sealing flange at the position of penetrating through the shell of the sample chamber of the scanning electron microscope.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920976449.XU CN210198999U (en) | 2019-06-25 | 2019-06-25 | Chemical vapor deposition and scanning electron microscope combined equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920976449.XU CN210198999U (en) | 2019-06-25 | 2019-06-25 | Chemical vapor deposition and scanning electron microscope combined equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210198999U true CN210198999U (en) | 2020-03-27 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920976449.XU Active CN210198999U (en) | 2019-06-25 | 2019-06-25 | Chemical vapor deposition and scanning electron microscope combined equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210198999U (en) |
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2019
- 2019-06-25 CN CN201920976449.XU patent/CN210198999U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201218 Address after: Room 101, 11 / F, Qifa building, eco Tech Park, 1620 Zhongtian Avenue, Zhongxin Tianjin eco city, Binhai New Area, Tianjin 300467 Patentee after: Huahui Kerui (Tianjin) Technology Co.,Ltd. Address before: 300467 no.1620 Zhongtian Avenue, ecological city, Binhai New Area, Tianjin Patentee before: Tianjin HuaHuixin Science and Technology Group Co.,Ltd. |
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| TR01 | Transfer of patent right |