CN113169130A - Wiring board, package for mounting electronic component, and electronic device - Google Patents

Wiring board, package for mounting electronic component, and electronic device Download PDF

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Publication number
CN113169130A
CN113169130A CN201980078222.6A CN201980078222A CN113169130A CN 113169130 A CN113169130 A CN 113169130A CN 201980078222 A CN201980078222 A CN 201980078222A CN 113169130 A CN113169130 A CN 113169130A
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CN
China
Prior art keywords
region
electronic component
comb
length
comb teeth
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Granted
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CN201980078222.6A
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Chinese (zh)
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CN113169130B (en
Inventor
白崎隆行
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01SDEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00Semiconductor lasers
    • H01S5/02Structural details or components not essential to laser action
    • H01S5/022Mountings; Housings
    • H01S5/02218Material of the housings; Filling of the housings
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/12Mountings, e.g. non-detachable insulating substrates
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 

Abstract

A wiring substrate (1) according to the present disclosure includes a dielectric substrate (2) and a pair of differential signal transmission lines (3, 4). A pair of differential signal transmission lines (3, 4) includes a 1 st transmission line (3) and a 2 nd transmission line (4). The 1 st transmission line (3) has a 1 st end (3a) and a 2 nd end (3b), and the 2 nd transmission line (4) has a 3 rd end (4a) and a 4 th end (4 b). The 2 nd end part (3b) has a 1 st connecting region (30) and a 1 st comb-tooth-shaped region (31) adjacent thereto. The 4 th end portion (4b) has a 2 nd connection region (40) which is provided so as to face the 1 st connection region (30) and is connected to the 1 st connection region (30) via an electronic component, and a 2 nd region (41) adjacent thereto. The 1 st region (31) and the 2 nd region (41) are disposed to engage with a space therebetween.

Description

Wiring board, package for mounting electronic component, and electronic device
Technical Field
The present disclosure relates to a wiring substrate, a package for mounting an electronic component, and an electronic device.
Background
In recent years, demand for high-speed communication has increased rapidly, and for example, there is a demand for higher speed of electronic devices such as semiconductor devices that transmit and receive optical signals using optical communication devices. For example, in optical communication, a modulation method is applied to an optical waveguide in order to perform high-speed and large-capacitance communication. The electrode for applying a DC bias to the modulation has a comb-tooth structure (see patent document 1).
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2017-181674
Disclosure of Invention
The disclosed wiring substrate is provided with: a dielectric substrate having a 1 st surface; and
a pair of differential signal transmission lines which are located on the 1 st surface of the dielectric substrate and perform differential signal transmission,
the pair of differential signal transmission lines includes: a 1 st transmission line having a 1 st end and a 2 nd end; and a 2 nd transmission line having a 3 rd end and a 4 th end,
the 2 nd end portion has: 1 st connection region; and a 1 st region of comb-teeth shape, adjacent to the 1 st connecting region,
the 4 th end portion has: a 2 nd connection region provided opposite to the 1 st connection region and connected to the 1 st connection region via an electronic component; and a 2 nd region of comb-teeth shape adjacent to the 2 nd connecting region and facing the 1 st region,
the 1 st region and the 2 nd region are disposed to engage with a space therebetween.
The disclosed electronic component mounting package is provided with: the wiring substrate described above;
a base having a 2 nd face; and
a pedestal protruding from the 2 nd surface of the base,
the wiring board is disposed on the pedestal.
The disclosed electronic component mounting package is provided with: the wiring substrate described above;
a base having a 2 nd face; and
a heat sink located on the No. 2 surface of the substrate,
the wiring substrate is disposed on the heat sink.
The disclosed electronic device is provided with: the electronic component mounting package described above; and
and an electronic component mounted on the wiring board.
Drawings
The objects, features and advantages of the present disclosure will become apparent from the detailed description and drawings that follow.
Fig. 1 is a plan view of a wiring substrate according to embodiment 1.
Fig. 2 is a perspective view of the wiring substrate.
Fig. 3 is a plan view of the wiring substrate according to embodiment 2.
Fig. 4 is a plan view of the wiring substrate according to embodiment 3.
Fig. 5 is a perspective view of the electronic component mounting package and the electronic device.
Fig. 6 is a perspective view of a structure including a lid.
Fig. 7A is a graph showing the simulation result.
Fig. 7B is a graph showing the simulation result.
Detailed Description
The wiring board, the electronic component mounting package, and the electronic device according to the embodiments of the present disclosure will be described in detail with reference to the drawings.
< Wiring Board >
< embodiment 1 >
As shown in fig. 1 and 2, the wiring substrate 1 of embodiment 1 includes a dielectric substrate 2, a pair of differential signal transmission lines 3 and 4, a 1 st ground wiring 5, a 2 nd ground wiring 6, and a 3 rd ground wiring 7.
The dielectric substrate 2 is a substrate containing a dielectric material. On the 1 st surface 2a of the dielectric substrate 2, a pair of differential signal transmission lines 3 and 4, a 1 st ground wiring 5, a 2 nd ground wiring 6, and a 3 rd ground wiring 7 are provided. The dielectric substrate 2 of the present embodiment is, for example, a rectangular plate. As the dielectric material, for example, a ceramic material such as an aluminum oxide sintered body, a mullite sintered body, a silicon carbide sintered body, an aluminum nitride sintered body or a silicon nitride sintered body, or a glass ceramic material can be used.
The pair of differential signal transmission lines 3 and 4 are provided on the 1 st surface 2a of the dielectric substrate 2 and transmit differential signals. The pair of differential signal transmission lines 3, 4 includes a 1 st transmission line 3 and a 2 nd transmission line 4, which transmit differential signals, respectively. That is, the high-frequency signal transmitted through the 1 st transmission line 3 and the high-frequency signal transmitted through the 2 nd transmission line 4 have opposite phases.
As shown in fig. 1, the 1 st transmission line 3 has a 1 st end 3a on one end side and a 2 nd end 3b on the other end side, and the 2 nd transmission line 4 has a 3 rd end 4a on one end side and a 4 th end 4b on the other end side. In the present embodiment, for example, the 1 st end 3a of the 1 st transmission line 3 is located on one (S1) side of the 2 opposing sides of the 1 st surface 2a of the dielectric substrate 2, and the 3 rd end 4a of the 2 nd transmission line 4 is located on the other (S2) side of the 2 opposing sides of the 1 st surface 2a of the dielectric substrate 2. The 1 st transmission line 3 and the 2 nd transmission line 4 extend on the center side of the 1 st surface 2a of the dielectric substrate 2, and the 2 nd end 3b of the 1 st transmission line 3 faces the 4 th end 4b of the 2 nd transmission line 4.
A1 st ground wiring 5 is provided on the 1 st surface 2a of the dielectric substrate 2 along the 1 st transmission line 3, and a 2 nd ground wiring 6 is provided along the 2 nd transmission line 4. Further, the 3 rd ground wiring 7 is provided from the other side of the 1 st transmission line 3 along the other side of the 2 nd transmission line 4. In the present embodiment, the 1 st ground wiring 5 and the 2 nd ground wiring 6 reach one of the other 2 opposing sides of the 1 st surface 2a of the dielectric substrate 2 (S3). The 3 rd ground wiring 7 reaches one of the other 2 sides of the 1 st surface 2a of the dielectric substrate 2 which are opposed to each other (S4).
The 2 nd end portion 3b and the 4 th end portion 4b have a 1 st connection region 30 and a 2 nd connection region 40, respectively, which are connected via a semiconductor element (electronic component) described later. The 1 st connection region 30 and the 2 nd connection region 40 are arranged opposite to each other. The connection region 30 of the 2 nd end portion 3b and the connection region 40 of the 4 th end portion 4b are not directly connected, and may be electrically connected with each other through a semiconductor element. For example, in the case where the semiconductor element has 2 connection terminals, one connection terminal is connected to the connection region 30 and the other terminal is connected to the connection region 40.
The 2 nd end 3b has a 1 st comb tooth region (1 st region) 31 adjacent to the connection region 30. The 1 st region 31 is a comb-tooth-shaped region facing the 4 th end 4b of the 2 nd transmission line 4. The 1 st region 31 is a region including a plurality of comb teeth 31 a. The 4 th end 4b has a 2 nd comb tooth region (2 nd region) 41 adjacent to the connection region 40. The 2 nd region 41 is a region facing the 2 nd end 3b of the 1 st transmission line 3, and is a comb-shaped region meshing with the 1 st region 31 with a gap therebetween. The 2 nd region 41 is a region including a plurality of comb teeth 41 a.
As described above, in the connection regions 30 and 40 adjacent to the 1 st region 31 and the 2 nd region 41, the connection members such as the wires connected to the connection regions 30 and 40 and the semiconductor element are connected via the semiconductor element, and become the reactance component (L component). In this region, an increase in characteristic impedance caused by an increase in the reactive component is generated. In the wiring board, the transmission lines such as the 1 st transmission line 3 and the 2 nd transmission line 4 are originally designed so that the characteristic impedance is constant in a state where the semiconductor element is not connected. However, since the semiconductor elements are connected, a local increase in characteristic impedance occurs, and the transmission characteristic of the high-frequency signal is degraded due to a mismatch in characteristic impedance.
In the present embodiment, the 1 st region 31 and the 2 nd region 41 are provided so as to mesh with a constant gap therebetween, and the capacitance component (C component) due to capacitive coupling increases as compared with the other regions of the transmission line. The increase of the C component based on the 1 st region 31 and the 2 nd region 41 can reduce the characteristic impedance mismatch caused by the connection of the semiconductor elements, reducing the degradation of the transmission characteristic of the high-frequency signal.
A certain space is left between the 1 st region 31 and the 2 nd region 41 for electrical insulation. The portions where the respective comb teeth 31a of the 1 st region 31 and the respective comb teeth 41a of the 2 nd region 41 mesh with each other, that is, the portions of the teeth adjacent to the 1 st surface 2a in the surface direction (direction along S1), have the same length. In the present embodiment, the comb teeth 31a of the 1 st region 31 are also the same length, and the comb teeth 41a of the 2 nd region 41 are also the same length. By changing the length of the comb teeth, the frequency band in which the transmission characteristics are improved can be changed. According to the relationship between the length of the comb teeth and the wavelength of the transmission signal, the longer the length of the comb teeth is, the more improved the transmission characteristics in the low frequency band are. The shorter the length of the comb teeth, the more improved the transmission characteristics in the high frequency band. By changing the length of the comb teeth in accordance with the frequency band of the high-frequency signal transmitted through the 1 st transmission line 3 and the 2 nd transmission line 4, the transmission characteristics in a specific frequency region can be improved.
Here, the length of the comb teeth is, for example, the size of the comb teeth in the direction along S3 in the present embodiment. That is, as shown in fig. 1, the comb teeth 31a of the 1 st region 31 are portions that project from S1 toward S2 in an elongated manner. Therefore, the size of the protruding portion may be set to the length L31a of the comb teeth 31a of the 1 st region 31. The length L41a of the comb teeth 41a of the 2 nd region 41 can be defined similarly.
In the present embodiment, as shown in fig. 1, the 1 st region 31 has the comb teeth 31as located closest to S4. The comb 31as includes the other side of the 1 st transmission line 3, and the length L31as of the comb 31as is shorter than the length L31a of the comb 31 a.
In the present embodiment, as shown in fig. 1, the interval between the 1 st connection region 30 and the 2 nd connection region is constant, but the interval may be changed. For example, the interval between the 1 st connection region 30 and the 2 nd connection region can be set as appropriate according to the type, characteristics, and the like of the electronic component existing.
The distances between the 1 st region 31 and the 2 nd region 41 and the semiconductor element, that is, the distance D1 between the 1 st region 31 and the connection region 30 and the distance D2 between the 2 nd region 41 and the connection region 40 can be set closer to each other. That is, the distances D1, D2 may also be decreased. For example, when the wavelengths of the high-frequency signals transmitted through the 1 st transmission line 3 and the 2 nd transmission line 4 are λ, the distances D1 and D2 may be equal to or less than λ/4, and further may be λ/8. In this case, reflection of the high-frequency signal in the transmission line can be further reduced. The length of the comb teeth is preferably λ/4 or less, and more preferably λ/8. In this case, reflection of the high-frequency signal in the transmission line can be further reduced.
< embodiment 2 >
Embodiment 2 is the same as wiring board 1 of embodiment 1 except that the configurations of region 1 and region 2 31 are different from those of embodiment 1, and therefore the same configurations are denoted by the same reference numerals and description thereof is omitted. In embodiment 1, the lengths of the respective comb teeth 31a of the 1 st comb tooth 31 and the respective comb teeth 41a of the 2 nd area 41 are the same, but as shown in fig. 3, the lengths are different in the present embodiment. As described above, the length of the comb teeth is made different between the 1 st region 31 and the 2 nd region 41 according to the frequency relationship between the length of the comb teeth and the transmission signal, whereby the transmission characteristics in a wider frequency band can be improved. In the present embodiment, the length of the 2 nd comb tooth of the 1 st region 31 on the side close to the connection region 30 is longer than the length of the 1 st comb tooth on the side far from the connection region 30. The length of the 4 th comb tooth of the 2 nd region 41 on the side close to the connection region 40 is longer than the length of the 3 rd comb tooth on the side far from the connection region 40. By changing the length of the comb teeth in accordance with the distance from the semiconductor element in this manner, the impedance mismatch can be reduced, and the reflection of the high-frequency signal can be reduced.
When the number of the respective comb teeth 31a of the 1 st area 31 and the number of the respective comb teeth 41a of the 2 nd area 41 are, for example, 3 or more, the lengths of the comb teeth closest to the connection areas 30 and 40 and the comb teeth farthest from the connection areas 30 and 40 may be in the above-described relationship, and the comb teeth located therebetween may be the same length as any of these comb teeth or may be different lengths. In the case of different lengths, the lengths may be set to be between the lengths of the comb teeth. In addition, as in the present embodiment, when the length Ls3 of the comb teeth on the side S3 side is different from the length Ls4 of the comb teeth on the side S4 side in any one comb tooth (the comb tooth 31a of the 1 st region 31 in fig. 1), the longer one of the lengths Ls3 and Ls4 can be used as the length L of the comb tooth.
< embodiment 3 >
Embodiment 3 is the same as wiring board 1 of embodiment 1 except that the configurations of region 1, region 31 and region 2 41 are different from those of embodiment 1, and therefore the same configurations are denoted by the same reference numerals and description thereof is omitted. The tip of each of the comb teeth 31a and 41a of the 1 st region 31 and the 2 nd region 41 is semicircular or R-shaped. In the present embodiment, as shown in fig. 4, the tip of the comb teeth is semicircular. By providing such a tip shape, the distance from the center of the comb teeth to the outline line is equal at the tip of the comb teeth. For example, if the tip shape is rectangular, the distance from the center of the comb teeth to the outline is longer in the corner portion than in the other portions. If the front ends of the comb teeth are semicircular, the distances from the centers of the comb teeth to the outline are equal. Further, if the corners of the distal ends of the comb teeth are formed into an arc-like R-shape, the difference in distance becomes smaller than that in a rectangular shape.
In a portion where the difference in distance from the center of the comb teeth to the outline is large, such as a corner of a rectangular shape, a mismatch in characteristic impedance may locally occur, resulting in a decrease in transmission characteristics. In the present embodiment, the tip of each of the comb teeth 31a and 41a is semicircular or rounded, so that local characteristic impedance mismatch can be reduced, and degradation of transmission characteristics can be reduced.
The shape of the tip of the comb teeth may be such that at least one of the respective comb teeth 31a and 41a of the 1 st region 31 and the 2 nd region 41 has a semicircular shape or a rounded shape, and the tips of a plurality of comb teeth may be of this shape or the tips of all the comb teeth may be of this shape. The tip shape of the comb teeth shown in the present embodiment can be applied not only to embodiment 1 but also to embodiment 2.
Each of the pair of differential signal transmission lines 3 and 4, the 1 st ground wiring 5, the 2 nd ground wiring 6, and the 3 rd ground wiring 7 includes a metal material such as gold, silver, copper, nickel, tungsten, molybdenum, and manganese. The wirings may be formed by simultaneously firing a metallization layer, a plating layer, or the like on the surface layer of the dielectric substrate 2 or by plating. Each of the wirings may be formed by processing a wire rod of a metal material into a predetermined shape, and bonded and connected to a plating layer provided on the surface layer of the dielectric substrate 2 via a bonding material such as a brazing material. Further, each wiring is not limited to, for example, a metal material which can be fired simultaneously with the dielectric substrate 2, and a wiring which is processed into a predetermined wiring shape with a metal alloy containing iron, nickel, cobalt, chromium, or the like and is joined to a plating layer provided on the surface layer of the dielectric substrate 2 with a brazing material can be used.
The dielectric substrate 2 can be produced as follows if it contains, for example, an aluminum oxide sintered body. First, raw material powders such as alumina and silica are formed into a sheet together with an appropriate organic binder and an organic solvent, thereby producing a plurality of rectangular sheet-shaped ceramic green sheets. These ceramic green sheets are then laminated to produce a laminate. Then, the laminate is fired at a temperature of 1300 to 1600 ℃, whereby the dielectric substrate 2 can be produced. In addition, the ceramic green sheet does not necessarily have to have a plurality of layers stacked, and may have only 1 layer as long as mechanical strength and the like as the dielectric substrate 2 are not impaired.
When the dielectric substrate 2 includes the aluminum oxide sintered body, each wiring may be made as follows, for example, by including tungsten. A metal paste prepared by mixing tungsten powder with an organic solvent and an organic binder is printed on the surface (main surface) of the ceramic green sheet to be the dielectric substrate 2 by a method such as screen printing so as to have a predetermined pattern shape. Then, the respective wirings can be formed by a method of simultaneously firing these ceramic green sheets and metal paste.
< Package for mounting electronic component and electronic device >
As shown in fig. 5, the electronic component mounting package 10 includes a wiring substrate 1 and is a package for mounting an electronic component 21 such as an optical semiconductor element. The electronic device 100 is a semiconductor device that transmits and receives an optical signal using an optical communication device, and includes an electronic component mounting package 10 and an electronic component 21 mounted on the electronic component mounting package 10.
The electronic component mounting package 10 includes a plate-like base 11, a base 12 protruding from a 2 nd surface 11a on one side in a thickness direction of the base 11, a wiring substrate 1 positioned on the 2 nd surface 11a side of the base 11, and a heat sink 14 in which the wiring substrate 1 is positioned on a surface 14 a. In the present embodiment, the present invention further includes: a connection substrate 16 which is positioned on the surface of the base 12 and electrically connected to the wiring substrate 1; and a connection terminal 18 inserted through the through hole 11b and electrically connected to the wiring board 1.
The substrate 11 is plate-shaped and has a 2 nd surface 11a on one side in the thickness direction. Further, a through hole 11b penetrating in the thickness direction is provided. The base 11 has a function of radiating heat generated by the mounted electronic component 21 to the outside of the electronic component mounting package 10, and also has a function of being electrically connected to an external ground wiring (reference potential wiring) to serve as a ground conductor of the electronic component mounting package 10. The base 11 contains a metal material excellent in thermal conductivity. As the metal material, for example, an iron-based alloy such as Fe — Ni — Co alloy or Fe — Mn alloy, or a metal such as pure iron can be selected as a material having a thermal expansion coefficient close to that of the electronic component 21 mounted on the electronic device 100 and the ceramic connection substrate 16, and a material having a low cost. More specifically, there are SPC (Steel Plate Cold, rolled Steel) materials of Fe 99.6 mass% to Mn 0.4 mass% system. When the base body 11 contains an SPC material, for example, the ingot (block) is subjected to a known metal working method such as press working or press working, thereby being formed into a predetermined shape. The through hole 11b is formed by drilling, for example.
The shape of the substrate 11 is, for example, a flat plate having a thickness of 0.5 to 2mm, and the shape is not particularly limited. The substrate 11 is, for example, a disk shape having a diameter of 3 to 10mm, a semicircular plate shape in which a part of a circumference having a radius of 1.5 to 8mm is cut, a quadrangular plate shape having one side of 3 to 15mm, or the like. The thickness of the base 11 may be different, and for example, if the thickness of the outer side of the base 11 is made thick, it is easy to closely contact members serving as radiators, such as a housing that houses the electronic device 100. This makes it easier to release heat generated from electronic component 21 to the outside via substrate 11.
The second surface 11a of the base 11 can be sequentially coated with a Ni layer and an Au layer by a plating method, and the Ni layer and the Au layer are excellent in corrosion resistance and wettability with a bonding material (brazing material) for bonding and fixing the electronic component 21, the connection substrate 16, or a lid body described later. This can effectively prevent oxidation corrosion of the substrate 11, and can solder (join) the lid body and the like to the substrate 11 satisfactorily. The thickness of the Ni layer may be set to 0.5 to 9 μm, for example, and the thickness of the Au layer may be set to 0.5 to 5 μm, for example.
The pedestal 12 is provided on the 2 nd surface 11a of the base 11 so as to protrude from the 2 nd surface 11 a. The pedestal 12 may be formed integrally with the base 11, or may be joined to the 2 nd surface 11a of the base 11. The base 12 may be made of the same metal material as the base 11, or may be made of a different material as long as it has conductivity. The shape of the pedestal 12 may be any shape as long as it has a surface on which the connection substrate 16 can be disposed, and may be, for example, a rectangular parallelepiped shape or a prism shape. The base 12 is electrically connected to the base 11, and the base 12 also functions as a ground conductor in the same manner as the base 11.
As in the present embodiment shown in fig. 5, the base 12 may include a 1 st base portion 120 and a 2 nd base portion 121 that are disposed apart in a direction parallel to the 2 nd surface 11 a. The 1 st pedestal portion 120 and the 2 nd pedestal portion 121 may be the same shape or different shapes. Further, 3 or more pedestal portions may be included.
The wiring board 1 is disposed on the surface 14a of the heat sink 14, and mounts the electronic component 21 as a semiconductor element. The differential signal transmission lines 3 and 4 and the electronic component 21 may be electrically connected by bonding wires, or may be bump connections in which terminals provided on the electronic component 21 and the differential signal transmission lines 3 and 4 are directly bonded by solder.
The bonding wire is a wire member provided between the electronic component 21 and the differential signal transmission lines 3 and 4 by a known wire bonding method. As the wire, for example, a gold wire, an aluminum wire, or the like can be used. The connection terminals of the electronic component 21 of the present embodiment are provided along the upper and lower sides, respectively. By mounting the electronic component 21 on the connection region 40 of the 2 nd transmission line 4, the connection terminal at the lower part of the electronic component 21 and the 2 nd transmission line 4 are electrically connected. The connection terminal on the upper part of the electronic component 21 and the connection region 30 of the 1 st transmission line 3 are electrically connected by the bonding wire 22.
The heat sink 14 is a heat conductive member of the wiring substrate 1 on the surface 14a thereof. Joule heat is generated if a high frequency signal is supplied to and operates electronic component 21 mounted on wiring board 1. When the electronic component 21 is, for example, a light emitting element, a decrease in the amount of light emission due to self-heating, a reduction in the lifetime due to deterioration of the element, or the like occurs. A part of the heat generated in the electronic component 21 is radiated and a part flows to the wiring substrate 1. The heat flowing to the wiring substrate 1 is further conducted to the heat sink 14, whereby the electronic component 21 is easily cooled. A part of the heat conducted to the heat sink 14 is radiated from the surface of the heat sink 14, and a part flows toward the pedestal 12 or the base 11. The heat sink 14 is made of a metal material having excellent thermal conductivity, and for example, copper or aluminum can be used. The heat sink 14 may have any shape as long as it has a surface 14a on which the wiring substrate 1 is positioned. By making the surface 14a the same size as or larger than the wiring substrate 1, the heat transfer area with the wiring substrate 1 can be increased. The heat sink 14 of the present embodiment has a rectangular parallelepiped shape having a surface 14a with such a size. The heat sink 14 may be disposed in contact with the base 11, or a thermoelectric element such as peltier may be present between the base 11 and the heat sink 14. This makes it easier to dissipate heat generated in the electronic component 21.
The connection terminal 18 is formed in a rod shape and inserted through the through hole 11b such that one end 18a is exposed on the 2 nd surface 11a side of the base 11. The through hole 11b is filled with an insulating material except for the connection terminal 18, and the connection terminal 18 is fixed. The insulating material includes, for example, an insulating inorganic dielectric material such as glass or ceramic. The insulating material may be any material that can secure the connection terminal 18 in the through hole 11b while ensuring an insulation space between the connection terminal 18 and the base body 11.
The connection terminal 18 is a terminal for electrically connecting the electronic component mounting package 10 to an external substrate or the like. The connection terminal 18 is electrically connected to the wiring board 1, and transmits a high-frequency signal (differential signal) supplied from the outside to the wiring board 1. The connection terminal 18 may be directly connected to the wiring board 1, or the connection terminal 18 may be connected to the wiring board 1 via the connection board 16 as in the present embodiment. The connection substrate 16 has a structure in which a wiring conductor including a signal line conductor is formed on an insulating substrate, similarly to the wiring substrate 1. One end 18a of the connection terminal 18 is electrically connected to the signal line conductor of the connection substrate 16, and the signal line conductor of the connection substrate 16 is electrically connected to the differential signal transmission lines 3 and 4 of the wiring substrate 1.
As shown in fig. 6, the electronic component mounting package 10 and the electronic device 100 further include a lid 50 covering the 2 nd surface 11a side of the base 11. After the electronic components are mounted, the 2 nd surface 11a side of the base 11 is sealed and protected by the lid 50.
Examples of the electronic component 21 mounted on the electronic device 100 include an optical semiconductor element such as an LD (laser diode) or a PD (photodiode), a semiconductor element including a semiconductor integrated circuit element, a piezoelectric element such as a crystal oscillator or a surface acoustic wave element, a pressure sensor element, a capacitance element, and a resistor.
Lid 50 has a shape that follows the outer shape of the outer peripheral region of base 11 and covers space such as electronic component 21, wiring board 1, base 12, heat sink 14, and connection board 16 on surface 2a of base 11. When the electronic component 21 is an optical semiconductor element such as an LD (laser diode) or a PD (photodiode), a window member 50a that transmits light may be provided in a portion of the cover that faces the electronic component 21, or an optical fiber and an optical isolator for preventing return light may be joined instead of the window member.
The lid body 50 is made of a metal such as an Fe — Ni — Co alloy, an Fe — Ni alloy, or an Fe — Mn alloy by applying a known metal working method such as press working or press working to these plate materials. The cover 50 may be made of a material having a thermal expansion coefficient similar to that of the base 11. The same material as that of the base 11 may be used for the cover 50. When the cover 50 has the window member 50a, the window member 50a made of flat plate-like or lens-like glass may be joined to a member having a hole in a portion facing the electronic component 21, by low-melting glass or the like.
The present invention is not limited to the above-described embodiments, and various modifications may be made without departing from the scope of the present invention.
For example, although the electronic component mounting package 10 using the circular base 11 has been described as an example in the above embodiment, a box-shaped electronic component mounting package may be used.
Examples
In order to confirm the effect of the present embodiment, a simulation of S parameter was performed. The wiring board 1 of embodiment 1 shown in fig. 1 was modeled, and for comparison, the same wiring board as that of embodiment 1 was modeled as a conventional structure except that the 1 st region 31 and the 2 nd region 41 were not provided. In addition, the length of the comb teeth was changed to 0.08mm, 0.18mm, and 0.28mm as the wiring board 1 of the present embodiment. For the S-parameter simulation, the thickness of the dielectric substrate 1 was set to 0.2mm, the material of the dielectric substrate 1 was aluminum nitride (relative permittivity was 9.0), and the materials of the 1 st transmission line 3 and the 2 nd transmission line 4 were gold, and calculation was performed.
Fig. 7A and 7B are graphs showing simulation results. Fig. 7A shows reflection loss, and fig. 7B shows transmission loss. The wiring substrate 1 of the present embodiment shows better results in terms of both reflection loss and transmission loss than the wiring substrate of the conventional structure. In the present embodiment, the longer the comb tooth length is, the lower the frequency of resonance appears, and the shorter the comb tooth length is, the higher the frequency of resonance appears, and the characteristics are improved.
The present disclosure can be embodied in other various forms without departing from the spirit or essential characteristics thereof. The foregoing embodiments are therefore to be considered in all respects illustrative and the scope of the invention is indicated by the appended claims and not limited to the text of the specification. Further, the present invention is intended to cover modifications and variations within the scope of the present invention as defined in the appended claims.
Description of the symbols
1: a wiring substrate;
2: a dielectric substrate;
2 a: a 1 st surface of the dielectric substrate;
3: 1 st transmission line;
3 a: 1 st end part;
3 b: a 2 nd end portion;
4: a 2 nd transmission line;
4 a: a 3 rd end portion;
4 b: a 4 th end portion;
5: 1 st ground wiring;
6: a 2 nd ground wiring;
7: a 3 rd ground wiring;
10: an electronic component mounting package;
11: a substrate;
11 a: the 2 nd surface of the substrate;
11 b: a through hole;
12: a pedestal;
14: a heat sink;
14 a: a surface;
16: connecting the substrates;
18: a connection terminal;
18 a: an end portion;
21: an electronic component;
22: welding wires;
30: 1 st connection region;
31: the 1 st comb tooth region (1 st region);
31 a: comb teeth of region 1;
40: a 2 nd connection region;
41: a 2 nd comb tooth region (2 nd region);
41 a: the comb teeth of the 2 nd area;
50: a cover body;
50 a: a window member;
100: an electronic device;
120: 1 st pedestal portion;
121: the 2 nd stage part.

Claims (10)

1. A wiring substrate is provided with:
a dielectric substrate having a 1 st surface;
a pair of differential signal transmission lines which are located on the 1 st surface of the dielectric substrate and perform differential signal transmission,
the pair of differential signal transmission lines includes: a 1 st transmission line having a 1 st end and a 2 nd end; and a 2 nd transmission line having a 3 rd end and a 4 th end,
the 2 nd end portion has: 1 st connection region; and a 1 st region of comb-teeth shape, adjacent to the 1 st connecting region,
the 4 th end portion has: a 2 nd connection region provided opposite to the 1 st connection region and connected to the 1 st connection region via an electronic component; and a 2 nd region of comb-teeth shape adjacent to the 2 nd connecting region and facing the 1 st region,
the 1 st region and the 2 nd region are disposed to engage with a space therebetween.
2. The wiring substrate according to claim 1,
the 1 st region has a 1 st comb tooth and a 2 nd comb tooth closer to the 1 st connecting region than the 1 st comb tooth,
the 2 nd region has a 3 rd comb tooth and a 4 th comb tooth closer to the 2 nd connecting region than the 3 rd comb tooth,
the length of the 2 nd comb tooth is longer than the length of the 1 st comb tooth, and the length of the 4 th comb tooth is longer than the length of the 3 rd comb tooth.
3. The wiring substrate according to claim 1 or 2,
the length of the comb teeth of the 1 st region on the side close to the 1 st connecting region is longer than the length of the comb teeth on the side far from the connecting region,
the length of the comb teeth of the 2 nd region on the side close to the 2 nd connecting region is longer than the length of the comb teeth on the side far from the connecting region.
4. The wiring substrate according to any one of claims 1 to 3,
the tip of the comb teeth of at least one of the 1 st region and the 2 nd region is semicircular or R-shaped.
5. The wiring substrate according to any one of claims 1 to 4,
when the wavelength of the electrical signal transmitted through the pair of differential signal transmission lines is λ, a distance D1 between the 1 st connection region and the 1 st region and a distance D2 between the 2 nd connection region and the 2 nd region are λ/4 or less.
6. The wiring substrate according to any one of claims 1 to 5,
when the wavelength of the electric signal transmitted through the pair of differential signal transmission lines is λ, the length of the comb teeth in the 1 st region and the length of the comb teeth in the 2 nd region are λ/4 or less.
7. A package for mounting an electronic component includes:
the wiring substrate according to any one of claims 1 to 6;
a base having a 2 nd face; and
a pedestal protruding from the 2 nd surface of the base,
the wiring board is disposed on the pedestal.
8. A package for mounting an electronic component includes:
the wiring substrate according to any one of claims 1 to 6;
a base having a 2 nd face; and
a heat sink located on the No. 2 surface of the substrate,
the wiring substrate is disposed on the heat sink.
9. The electronic component mounting package according to claim 7 or 8, wherein,
the electronic component mounting package further includes a lid body covering the 2 nd surface of the base body.
10. An electronic device is provided with:
the electronic component mounting package according to any one of claims 7 to 9; and
and an electronic component mounted on the wiring board.
CN201980078222.6A 2018-11-30 2019-11-29 Wiring board, package for mounting electronic component, and electronic device Active CN113169130B (en)

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JP2018225148 2018-11-30
JP2018-225148 2018-11-30
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EP3965145A1 (en) * 2020-09-03 2022-03-09 Schott Ag Transistor outline header for high-speed optoelectronic package
EP3965146A1 (en) * 2020-09-03 2022-03-09 Schott Ag Header for an electronic component

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WO2020111257A1 (en) 2020-06-04
JPWO2020111257A1 (en) 2021-10-14
CN113169130B (en) 2023-10-17

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