CN113165069A - 铜粒子、铜粒子的制造方法、铜膏和半导体装置以及电气/电子部件 - Google Patents
铜粒子、铜粒子的制造方法、铜膏和半导体装置以及电气/电子部件 Download PDFInfo
- Publication number
- CN113165069A CN113165069A CN201980079631.8A CN201980079631A CN113165069A CN 113165069 A CN113165069 A CN 113165069A CN 201980079631 A CN201980079631 A CN 201980079631A CN 113165069 A CN113165069 A CN 113165069A
- Authority
- CN
- China
- Prior art keywords
- copper
- acid
- hydrazinoethanol
- copper particles
- paste
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000010949 copper Substances 0.000 title claims abstract description 179
- 229910052802 copper Inorganic materials 0.000 title claims abstract description 173
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title claims abstract description 166
- 239000002245 particle Substances 0.000 title claims abstract description 123
- 239000004065 semiconductor Substances 0.000 title claims description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 19
- -1 nitrogen-containing compound Chemical class 0.000 claims abstract description 64
- VTIRNZBEJBPYCV-UHFFFAOYSA-N 1-hydrazinylethanol Chemical compound CC(O)NN VTIRNZBEJBPYCV-UHFFFAOYSA-N 0.000 claims abstract description 61
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine hydrate Chemical compound O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims description 34
- 239000005749 Copper compound Substances 0.000 claims description 26
- 150000001880 copper compounds Chemical class 0.000 claims description 26
- 229920005989 resin Polymers 0.000 description 34
- 239000011347 resin Substances 0.000 description 34
- 239000003960 organic solvent Substances 0.000 description 30
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 description 28
- 238000000034 method Methods 0.000 description 22
- 238000010438 heat treatment Methods 0.000 description 21
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical class [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 description 18
- 150000001875 compounds Chemical class 0.000 description 18
- 239000000047 product Substances 0.000 description 18
- FBUKVWPVBMHYJY-UHFFFAOYSA-N nonanoic acid Chemical compound CCCCCCCCC(O)=O FBUKVWPVBMHYJY-UHFFFAOYSA-N 0.000 description 16
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 14
- OFOBLEOULBTSOW-UHFFFAOYSA-N Malonic acid Chemical compound OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 14
- 239000000203 mixture Substances 0.000 description 14
- 238000005245 sintering Methods 0.000 description 14
- 239000000758 substrate Substances 0.000 description 14
- 229920001187 thermosetting polymer Polymers 0.000 description 14
- 239000000463 material Substances 0.000 description 13
- 229910052751 metal Inorganic materials 0.000 description 13
- 239000002184 metal Substances 0.000 description 13
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 12
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 description 12
- 239000000126 substance Substances 0.000 description 12
- 230000015572 biosynthetic process Effects 0.000 description 11
- 239000010410 layer Substances 0.000 description 11
- 238000002156 mixing Methods 0.000 description 11
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 238000006722 reduction reaction Methods 0.000 description 10
- RXWOHFUULDINMC-UHFFFAOYSA-N 2-(3-nitrothiophen-2-yl)acetic acid Chemical compound OC(=O)CC=1SC=CC=1[N+]([O-])=O RXWOHFUULDINMC-UHFFFAOYSA-N 0.000 description 9
- 239000000853 adhesive Substances 0.000 description 9
- 230000001070 adhesive effect Effects 0.000 description 9
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 9
- 238000003786 synthesis reaction Methods 0.000 description 9
- 239000005643 Pelargonic acid Substances 0.000 description 8
- BERDEBHAJNAUOM-UHFFFAOYSA-N copper(i) oxide Chemical compound [Cu]O[Cu] BERDEBHAJNAUOM-UHFFFAOYSA-N 0.000 description 8
- KRFJLUBVMFXRPN-UHFFFAOYSA-N cuprous oxide Chemical compound [O-2].[Cu+].[Cu+] KRFJLUBVMFXRPN-UHFFFAOYSA-N 0.000 description 8
- GHVNFZFCNZKVNT-UHFFFAOYSA-N decanoic acid Chemical compound CCCCCCCCCC(O)=O GHVNFZFCNZKVNT-UHFFFAOYSA-N 0.000 description 8
- 230000017525 heat dissipation Effects 0.000 description 8
- 150000003839 salts Chemical class 0.000 description 8
- JJLJMEJHUUYSSY-UHFFFAOYSA-L Copper hydroxide Chemical class [OH-].[OH-].[Cu+2] JJLJMEJHUUYSSY-UHFFFAOYSA-L 0.000 description 7
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 7
- 238000009835 boiling Methods 0.000 description 7
- 239000003822 epoxy resin Substances 0.000 description 7
- 229920000647 polyepoxide Polymers 0.000 description 7
- 230000005855 radiation Effects 0.000 description 7
- XDOFQFKRPWOURC-UHFFFAOYSA-N 16-methylheptadecanoic acid Chemical compound CC(C)CCCCCCCCCCCCCCC(O)=O XDOFQFKRPWOURC-UHFFFAOYSA-N 0.000 description 6
- RAXXELZNTBOGNW-UHFFFAOYSA-N 1H-imidazole Chemical class C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 6
- FERIUCNNQQJTOY-UHFFFAOYSA-N Butyric acid Chemical compound CCCC(O)=O FERIUCNNQQJTOY-UHFFFAOYSA-N 0.000 description 6
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 6
- WNLRTRBMVRJNCN-UHFFFAOYSA-N adipic acid Chemical compound OC(=O)CCCCC(O)=O WNLRTRBMVRJNCN-UHFFFAOYSA-N 0.000 description 6
- 150000007933 aliphatic carboxylic acids Chemical class 0.000 description 6
- 150000003973 alkyl amines Chemical class 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 6
- KRKNYBCHXYNGOX-UHFFFAOYSA-N citric acid Chemical compound OC(=O)CC(O)(C(O)=O)CC(O)=O KRKNYBCHXYNGOX-UHFFFAOYSA-N 0.000 description 6
- 239000004643 cyanate ester Substances 0.000 description 6
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 6
- XBDQKXXYIPTUBI-UHFFFAOYSA-N dimethylselenoniopropionate Natural products CCC(O)=O XBDQKXXYIPTUBI-UHFFFAOYSA-N 0.000 description 6
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 6
- BDJRBEYXGGNYIS-UHFFFAOYSA-N nonanedioic acid Chemical compound OC(=O)CCCCCCCC(O)=O BDJRBEYXGGNYIS-UHFFFAOYSA-N 0.000 description 6
- XNGIFLGASWRNHJ-UHFFFAOYSA-N phthalic acid Chemical compound OC(=O)C1=CC=CC=C1C(O)=O XNGIFLGASWRNHJ-UHFFFAOYSA-N 0.000 description 6
- WLJVNTCWHIRURA-UHFFFAOYSA-N pimelic acid Chemical compound OC(=O)CCCCCC(O)=O WLJVNTCWHIRURA-UHFFFAOYSA-N 0.000 description 6
- CXMXRPHRNRROMY-UHFFFAOYSA-N sebacic acid Chemical compound OC(=O)CCCCCCCCC(O)=O CXMXRPHRNRROMY-UHFFFAOYSA-N 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- TYFQFVWCELRYAO-UHFFFAOYSA-N suberic acid Chemical compound OC(=O)CCCCCCC(O)=O TYFQFVWCELRYAO-UHFFFAOYSA-N 0.000 description 6
- NQPDZGIKBAWPEJ-UHFFFAOYSA-N valeric acid Chemical compound CCCCC(O)=O NQPDZGIKBAWPEJ-UHFFFAOYSA-N 0.000 description 6
- RTBFRGCFXZNCOE-UHFFFAOYSA-N 1-methylsulfonylpiperidin-4-one Chemical compound CS(=O)(=O)N1CCC(=O)CC1 RTBFRGCFXZNCOE-UHFFFAOYSA-N 0.000 description 5
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 5
- FURRODCGIUGGGU-UHFFFAOYSA-N CCCCCCCCC(OC(C)NN)=O Chemical compound CCCCCCCCC(OC(C)NN)=O FURRODCGIUGGGU-UHFFFAOYSA-N 0.000 description 5
- KDYFGRWQOYBRFD-UHFFFAOYSA-N Succinic acid Natural products OC(=O)CCC(O)=O KDYFGRWQOYBRFD-UHFFFAOYSA-N 0.000 description 5
- JFCQEDHGNNZCLN-UHFFFAOYSA-N anhydrous glutaric acid Natural products OC(=O)CCCC(O)=O JFCQEDHGNNZCLN-UHFFFAOYSA-N 0.000 description 5
- KDYFGRWQOYBRFD-NUQCWPJISA-N butanedioic acid Chemical compound O[14C](=O)CC[14C](O)=O KDYFGRWQOYBRFD-NUQCWPJISA-N 0.000 description 5
- 125000003055 glycidyl group Chemical group C(C1CO1)* 0.000 description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 5
- 230000005012 migration Effects 0.000 description 5
- 238000013508 migration Methods 0.000 description 5
- GBHCABUWWQUMAJ-UHFFFAOYSA-N 2-hydrazinoethanol Chemical compound NNCCO GBHCABUWWQUMAJ-UHFFFAOYSA-N 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 4
- 229920000178 Acrylic resin Polymers 0.000 description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- 239000005632 Capric acid (CAS 334-48-5) Substances 0.000 description 4
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 4
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 4
- AEMRFAOFKBGASW-UHFFFAOYSA-N Glycolic acid Chemical compound OCC(O)=O AEMRFAOFKBGASW-UHFFFAOYSA-N 0.000 description 4
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical compound O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 description 4
- FEWJPZIEWOKRBE-UHFFFAOYSA-N Tartaric acid Natural products [H+].[H+].[O-]C(=O)C(O)C(O)C([O-])=O FEWJPZIEWOKRBE-UHFFFAOYSA-N 0.000 description 4
- KKEYFWRCBNTPAC-UHFFFAOYSA-N Terephthalic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 description 4
- XDODWINGEHBYRT-UHFFFAOYSA-N [2-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCCCC1CO XDODWINGEHBYRT-UHFFFAOYSA-N 0.000 description 4
- 235000011054 acetic acid Nutrition 0.000 description 4
- 239000002253 acid Substances 0.000 description 4
- 150000001252 acrylic acid derivatives Chemical class 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 125000000217 alkyl group Chemical group 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- WPYMKLBDIGXBTP-UHFFFAOYSA-N benzoic acid Chemical compound OC(=O)C1=CC=CC=C1 WPYMKLBDIGXBTP-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- LNTHITQWFMADLM-UHFFFAOYSA-N gallic acid Chemical compound OC(=O)C1=CC(O)=C(O)C(O)=C1 LNTHITQWFMADLM-UHFFFAOYSA-N 0.000 description 4
- IPCSVZSSVZVIGE-UHFFFAOYSA-N hexadecanoic acid Chemical compound CCCCCCCCCCCCCCCC(O)=O IPCSVZSSVZVIGE-UHFFFAOYSA-N 0.000 description 4
- NDTKJPJWXDRYIY-UHFFFAOYSA-N hexanoic acid;octanoic acid Chemical compound CCCCCC(O)=O.CCCCCCCC(O)=O NDTKJPJWXDRYIY-UHFFFAOYSA-N 0.000 description 4
- QQVIHTHCMHWDBS-UHFFFAOYSA-N isophthalic acid Chemical compound OC(=O)C1=CC=CC(C(O)=O)=C1 QQVIHTHCMHWDBS-UHFFFAOYSA-N 0.000 description 4
- JVTAAEKCZFNVCJ-UHFFFAOYSA-N lactic acid Chemical compound CC(O)C(O)=O JVTAAEKCZFNVCJ-UHFFFAOYSA-N 0.000 description 4
- 239000002932 luster Substances 0.000 description 4
- FPYJFEHAWHCUMM-UHFFFAOYSA-N maleic anhydride Chemical compound O=C1OC(=O)C=C1 FPYJFEHAWHCUMM-UHFFFAOYSA-N 0.000 description 4
- DNIAPMSPPWPWGF-UHFFFAOYSA-N monopropylene glycol Natural products CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 4
- 229910052757 nitrogen Inorganic materials 0.000 description 4
- ACXGEQOZKSSXKV-UHFFFAOYSA-N octanoic acid Chemical compound CCCCCCCC(O)=O.CCCCCCCC(O)=O ACXGEQOZKSSXKV-UHFFFAOYSA-N 0.000 description 4
- ZQPPMHVWECSIRJ-KTKRTIGZSA-N oleic acid Chemical compound CCCCCCCC\C=C/CCCCCCCC(O)=O ZQPPMHVWECSIRJ-KTKRTIGZSA-N 0.000 description 4
- 235000006408 oxalic acid Nutrition 0.000 description 4
- 229920005862 polyol Polymers 0.000 description 4
- YGSDEFSMJLZEOE-UHFFFAOYSA-N salicylic acid Chemical compound OC(=O)C1=CC=CC=C1O YGSDEFSMJLZEOE-UHFFFAOYSA-N 0.000 description 4
- 238000005476 soldering Methods 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- 239000011975 tartaric acid Substances 0.000 description 4
- 235000002906 tartaric acid Nutrition 0.000 description 4
- WRIDQFICGBMAFQ-UHFFFAOYSA-N (E)-8-Octadecenoic acid Natural products CCCCCCCCCC=CCCCCCCC(O)=O WRIDQFICGBMAFQ-UHFFFAOYSA-N 0.000 description 3
- LQJBNNIYVWPHFW-UHFFFAOYSA-N 20:1omega9c fatty acid Natural products CCCCCCCCCCC=CCCCCCCCC(O)=O LQJBNNIYVWPHFW-UHFFFAOYSA-N 0.000 description 3
- OSWFIVFLDKOXQC-UHFFFAOYSA-N 4-(3-methoxyphenyl)aniline Chemical compound COC1=CC=CC(C=2C=CC(N)=CC=2)=C1 OSWFIVFLDKOXQC-UHFFFAOYSA-N 0.000 description 3
- QSBYPNXLFMSGKH-UHFFFAOYSA-N 9-Heptadecensaeure Natural products CCCCCCCC=CCCCCCCCC(O)=O QSBYPNXLFMSGKH-UHFFFAOYSA-N 0.000 description 3
- ZOKNRGWAYITZHD-UHFFFAOYSA-N CCCCC(OC(C)NN)=O Chemical compound CCCCC(OC(C)NN)=O ZOKNRGWAYITZHD-UHFFFAOYSA-N 0.000 description 3
- VPMJFXUCLHYWTK-UHFFFAOYSA-N CCCCCCC(OC(C)NN)=O Chemical compound CCCCCCC(OC(C)NN)=O VPMJFXUCLHYWTK-UHFFFAOYSA-N 0.000 description 3
- QEYKLGKEXHYSDT-UHFFFAOYSA-N CCCCCCCC(OC(C)NN)=O Chemical compound CCCCCCCC(OC(C)NN)=O QEYKLGKEXHYSDT-UHFFFAOYSA-N 0.000 description 3
- 239000005751 Copper oxide Substances 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 3
- 239000005642 Oleic acid Substances 0.000 description 3
- ZQPPMHVWECSIRJ-UHFFFAOYSA-N Oleic acid Natural products CCCCCCCCC=CCCCCCCCC(O)=O ZQPPMHVWECSIRJ-UHFFFAOYSA-N 0.000 description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 235000021355 Stearic acid Nutrition 0.000 description 3
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 description 3
- 239000001361 adipic acid Substances 0.000 description 3
- 235000011037 adipic acid Nutrition 0.000 description 3
- 125000003277 amino group Chemical group 0.000 description 3
- 239000012298 atmosphere Substances 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- 239000011230 binding agent Substances 0.000 description 3
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000004020 conductor Substances 0.000 description 3
- 229910000431 copper oxide Inorganic materials 0.000 description 3
- 239000000945 filler Substances 0.000 description 3
- 235000019253 formic acid Nutrition 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000010931 gold Substances 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- QXJSBBXBKPUZAA-UHFFFAOYSA-N isooleic acid Natural products CCCCCCCC=CCCCCCCCCC(O)=O QXJSBBXBKPUZAA-UHFFFAOYSA-N 0.000 description 3
- LAQPNDIUHRHNCV-UHFFFAOYSA-N isophthalonitrile Chemical compound N#CC1=CC=CC(C#N)=C1 LAQPNDIUHRHNCV-UHFFFAOYSA-N 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- 229920003986 novolac Polymers 0.000 description 3
- QIQXTHQIDYTFRH-UHFFFAOYSA-N octadecanoic acid Chemical compound CCCCCCCCCCCCCCCCCC(O)=O QIQXTHQIDYTFRH-UHFFFAOYSA-N 0.000 description 3
- OQCDKBAXFALNLD-UHFFFAOYSA-N octadecanoic acid Natural products CCCCCCCC(C)CCCCCCCCC(O)=O OQCDKBAXFALNLD-UHFFFAOYSA-N 0.000 description 3
- IOQPZZOEVPZRBK-UHFFFAOYSA-N octan-1-amine Chemical compound CCCCCCCCN IOQPZZOEVPZRBK-UHFFFAOYSA-N 0.000 description 3
- WXZMFSXDPGVJKK-UHFFFAOYSA-N pentaerythritol Chemical compound OCC(CO)(CO)CO WXZMFSXDPGVJKK-UHFFFAOYSA-N 0.000 description 3
- 150000003077 polyols Chemical class 0.000 description 3
- 238000007639 printing Methods 0.000 description 3
- 235000019260 propionic acid Nutrition 0.000 description 3
- IUVKMZGDUIUOCP-BTNSXGMBSA-N quinbolone Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H]([C@]4(C=CC(=O)C=C4CC3)C)CC[C@@]21C)C1=CCCC1 IUVKMZGDUIUOCP-BTNSXGMBSA-N 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 239000008117 stearic acid Substances 0.000 description 3
- 229940005605 valeric acid Drugs 0.000 description 3
- BJEPYKJPYRNKOW-REOHCLBHSA-N (S)-malic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O BJEPYKJPYRNKOW-REOHCLBHSA-N 0.000 description 2
- RBNPOMFGQQGHHO-UHFFFAOYSA-N -2,3-Dihydroxypropanoic acid Natural products OCC(O)C(O)=O RBNPOMFGQQGHHO-UHFFFAOYSA-N 0.000 description 2
- KBPLFHHGFOOTCA-UHFFFAOYSA-N 1-Octanol Chemical compound CCCCCCCCO KBPLFHHGFOOTCA-UHFFFAOYSA-N 0.000 description 2
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 2
- BBMCTIGTTCKYKF-UHFFFAOYSA-N 1-heptanol Chemical compound CCCCCCCO BBMCTIGTTCKYKF-UHFFFAOYSA-N 0.000 description 2
- 125000000954 2-hydroxyethyl group Chemical group [H]C([*])([H])C([H])([H])O[H] 0.000 description 2
- QOXOZONBQWIKDA-UHFFFAOYSA-N 3-hydroxypropyl Chemical group [CH2]CCO QOXOZONBQWIKDA-UHFFFAOYSA-N 0.000 description 2
- SJZRECIVHVDYJC-UHFFFAOYSA-N 4-hydroxybutyric acid Chemical compound OCCCC(O)=O SJZRECIVHVDYJC-UHFFFAOYSA-N 0.000 description 2
- 239000005711 Benzoic acid Substances 0.000 description 2
- NASXXZACRRWPFM-UHFFFAOYSA-N CCC(OC(C)NN)=O Chemical compound CCC(OC(C)NN)=O NASXXZACRRWPFM-UHFFFAOYSA-N 0.000 description 2
- ZKKIXFAQIMAYJF-UHFFFAOYSA-N CCCC(OC(C)NN)=O Chemical compound CCCC(OC(C)NN)=O ZKKIXFAQIMAYJF-UHFFFAOYSA-N 0.000 description 2
- RBNPOMFGQQGHHO-UWTATZPHSA-N D-glyceric acid Chemical compound OC[C@@H](O)C(O)=O RBNPOMFGQQGHHO-UWTATZPHSA-N 0.000 description 2
- ODBLHEXUDAPZAU-ZAFYKAAXSA-N D-threo-isocitric acid Chemical compound OC(=O)[C@H](O)[C@@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-ZAFYKAAXSA-N 0.000 description 2
- QEVGZEDELICMKH-UHFFFAOYSA-N Diglycolic acid Chemical compound OC(=O)COCC(O)=O QEVGZEDELICMKH-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- VZCYOOQTPOCHFL-OWOJBTEDSA-N Fumaric acid Chemical compound OC(=O)\C=C\C(O)=O VZCYOOQTPOCHFL-OWOJBTEDSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- DHMQDGOQFOQNFH-UHFFFAOYSA-N Glycine Chemical compound NCC(O)=O DHMQDGOQFOQNFH-UHFFFAOYSA-N 0.000 description 2
- ODBLHEXUDAPZAU-FONMRSAGSA-N Isocitric acid Natural products OC(=O)[C@@H](O)[C@H](C(O)=O)CC(O)=O ODBLHEXUDAPZAU-FONMRSAGSA-N 0.000 description 2
- LRHPLDYGYMQRHN-UHFFFAOYSA-N N-Butanol Chemical compound CCCCO LRHPLDYGYMQRHN-UHFFFAOYSA-N 0.000 description 2
- AMQJEAYHLZJPGS-UHFFFAOYSA-N N-Pentanol Chemical compound CCCCCO AMQJEAYHLZJPGS-UHFFFAOYSA-N 0.000 description 2
- HQFSIUULOXHUJE-UHFFFAOYSA-N NNC(C)OC(C)=O Chemical compound NNC(C)OC(C)=O HQFSIUULOXHUJE-UHFFFAOYSA-N 0.000 description 2
- 235000021314 Palmitic acid Nutrition 0.000 description 2
- CDBYLPFSWZWCQE-UHFFFAOYSA-L Sodium Carbonate Chemical compound [Na+].[Na+].[O-]C([O-])=O CDBYLPFSWZWCQE-UHFFFAOYSA-L 0.000 description 2
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 2
- ZJCCRDAZUWHFQH-UHFFFAOYSA-N Trimethylolpropane Chemical compound CCC(CO)(CO)CO ZJCCRDAZUWHFQH-UHFFFAOYSA-N 0.000 description 2
- 235000010724 Wisteria floribunda Nutrition 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 150000008065 acid anhydrides Chemical class 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- BJEPYKJPYRNKOW-UHFFFAOYSA-N alpha-hydroxysuccinic acid Natural products OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 150000001413 amino acids Chemical class 0.000 description 2
- BHXFKXOIODIUJO-UHFFFAOYSA-N benzene-1,4-dicarbonitrile Chemical compound N#CC1=CC=C(C#N)C=C1 BHXFKXOIODIUJO-UHFFFAOYSA-N 0.000 description 2
- 235000010233 benzoic acid Nutrition 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical class C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- HQABUPZFAYXKJW-UHFFFAOYSA-N butan-1-amine Chemical compound CCCCN HQABUPZFAYXKJW-UHFFFAOYSA-N 0.000 description 2
- WERYXYBDKMZEQL-UHFFFAOYSA-N butane-1,4-diol Chemical compound OCCCCO WERYXYBDKMZEQL-UHFFFAOYSA-N 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 150000007942 carboxylates Chemical class 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- PMMYEEVYMWASQN-IMJSIDKUSA-N cis-4-Hydroxy-L-proline Chemical compound O[C@@H]1CN[C@H](C(O)=O)C1 PMMYEEVYMWASQN-IMJSIDKUSA-N 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 229910001956 copper hydroxide Inorganic materials 0.000 description 2
- OPQARKPSCNTWTJ-UHFFFAOYSA-L copper(ii) acetate Chemical compound [Cu+2].CC([O-])=O.CC([O-])=O OPQARKPSCNTWTJ-UHFFFAOYSA-L 0.000 description 2
- AEJIMXVJZFYIHN-UHFFFAOYSA-N copper;dihydrate Chemical compound O.O.[Cu] AEJIMXVJZFYIHN-UHFFFAOYSA-N 0.000 description 2
- 239000007822 coupling agent Substances 0.000 description 2
- XLJMAIOERFSOGZ-UHFFFAOYSA-M cyanate Chemical compound [O-]C#N XLJMAIOERFSOGZ-UHFFFAOYSA-M 0.000 description 2
- PDXRQENMIVHKPI-UHFFFAOYSA-N cyclohexane-1,1-diol Chemical compound OC1(O)CCCCC1 PDXRQENMIVHKPI-UHFFFAOYSA-N 0.000 description 2
- PFURGBBHAOXLIO-UHFFFAOYSA-N cyclohexane-1,2-diol Chemical compound OC1CCCCC1O PFURGBBHAOXLIO-UHFFFAOYSA-N 0.000 description 2
- RLMGYIOTPQVQJR-UHFFFAOYSA-N cyclohexane-1,3-diol Chemical compound OC1CCCC(O)C1 RLMGYIOTPQVQJR-UHFFFAOYSA-N 0.000 description 2
- PAFZNILMFXTMIY-UHFFFAOYSA-N cyclohexylamine Chemical compound NC1CCCCC1 PAFZNILMFXTMIY-UHFFFAOYSA-N 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- JQVDAXLFBXTEQA-UHFFFAOYSA-N dibutylamine Chemical compound CCCCNCCCC JQVDAXLFBXTEQA-UHFFFAOYSA-N 0.000 description 2
- 239000003085 diluting agent Substances 0.000 description 2
- SNRUBQQJIBEYMU-UHFFFAOYSA-N dodecane Chemical compound CCCCCCCCCCCC SNRUBQQJIBEYMU-UHFFFAOYSA-N 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 229940074391 gallic acid Drugs 0.000 description 2
- 235000004515 gallic acid Nutrition 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 235000011187 glycerol Nutrition 0.000 description 2
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 2
- ZSIAUFGUXNUGDI-UHFFFAOYSA-N hexan-1-ol Chemical compound CCCCCCO ZSIAUFGUXNUGDI-UHFFFAOYSA-N 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000011065 in-situ storage Methods 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 239000004310 lactic acid Substances 0.000 description 2
- 235000014655 lactic acid Nutrition 0.000 description 2
- 125000005439 maleimidyl group Chemical group C1(C=CC(N1*)=O)=O 0.000 description 2
- 239000001630 malic acid Substances 0.000 description 2
- 235000011090 malic acid Nutrition 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002923 metal particle Substances 0.000 description 2
- WQEPLUUGTLDZJY-UHFFFAOYSA-N n-Pentadecanoic acid Natural products CCCCCCCCCCCCCCC(O)=O WQEPLUUGTLDZJY-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 235000021313 oleic acid Nutrition 0.000 description 2
- FJKROLUGYXJWQN-UHFFFAOYSA-N papa-hydroxy-benzoic acid Natural products OC(=O)C1=CC=C(O)C=C1 FJKROLUGYXJWQN-UHFFFAOYSA-N 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229920003192 poly(bis maleimide) Polymers 0.000 description 2
- 239000004417 polycarbonate Substances 0.000 description 2
- 229920000515 polycarbonate Polymers 0.000 description 2
- 229920000570 polyether Polymers 0.000 description 2
- 229920000193 polymethacrylate Polymers 0.000 description 2
- 229960004063 propylene glycol Drugs 0.000 description 2
- 235000013772 propylene glycol Nutrition 0.000 description 2
- KIDHWZJUCRJVML-UHFFFAOYSA-N putrescine Chemical compound NCCCCN KIDHWZJUCRJVML-UHFFFAOYSA-N 0.000 description 2
- 150000003254 radicals Chemical class 0.000 description 2
- 229960004889 salicylic acid Drugs 0.000 description 2
- 239000003566 sealing material Substances 0.000 description 2
- 238000000926 separation method Methods 0.000 description 2
- 229910000679 solder Inorganic materials 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 150000005846 sugar alcohols Polymers 0.000 description 2
- ODBLHEXUDAPZAU-UHFFFAOYSA-N threo-D-isocitric acid Natural products OC(=O)C(O)C(C(O)=O)CC(O)=O ODBLHEXUDAPZAU-UHFFFAOYSA-N 0.000 description 2
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 2
- XFNJVJPLKCPIBV-UHFFFAOYSA-N trimethylenediamine Chemical compound NCCCN XFNJVJPLKCPIBV-UHFFFAOYSA-N 0.000 description 2
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 2
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 2
- DNIAPMSPPWPWGF-VKHMYHEASA-N (+)-propylene glycol Chemical compound C[C@H](O)CO DNIAPMSPPWPWGF-VKHMYHEASA-N 0.000 description 1
- CRNSJZSDZHDVQP-UHFFFAOYSA-N (2,6-dibromo-4-propylphenyl) cyanate Chemical compound BrC=1C=C(C=C(C=1OC#N)Br)CCC CRNSJZSDZHDVQP-UHFFFAOYSA-N 0.000 description 1
- WYTZZXDRDKSJID-UHFFFAOYSA-N (3-aminopropyl)triethoxysilane Chemical compound CCO[Si](OCC)(OCC)CCCN WYTZZXDRDKSJID-UHFFFAOYSA-N 0.000 description 1
- MUTGBJKUEZFXGO-OLQVQODUSA-N (3as,7ar)-3a,4,5,6,7,7a-hexahydro-2-benzofuran-1,3-dione Chemical compound C1CCC[C@@H]2C(=O)OC(=O)[C@@H]21 MUTGBJKUEZFXGO-OLQVQODUSA-N 0.000 description 1
- KMOUUZVZFBCRAM-OLQVQODUSA-N (3as,7ar)-3a,4,7,7a-tetrahydro-2-benzofuran-1,3-dione Chemical compound C1C=CC[C@@H]2C(=O)OC(=O)[C@@H]21 KMOUUZVZFBCRAM-OLQVQODUSA-N 0.000 description 1
- JDIPZHAYUYYGSN-UHFFFAOYSA-N (4-propylphenyl) cyanate Chemical compound CCCC1=CC=C(OC#N)C=C1 JDIPZHAYUYYGSN-UHFFFAOYSA-N 0.000 description 1
- RUEBPOOTFCZRBC-UHFFFAOYSA-N (5-methyl-2-phenyl-1h-imidazol-4-yl)methanol Chemical compound OCC1=C(C)NC(C=2C=CC=CC=2)=N1 RUEBPOOTFCZRBC-UHFFFAOYSA-N 0.000 description 1
- DNIAPMSPPWPWGF-GSVOUGTGSA-N (R)-(-)-Propylene glycol Chemical compound C[C@@H](O)CO DNIAPMSPPWPWGF-GSVOUGTGSA-N 0.000 description 1
- QGLWBTPVKHMVHM-KTKRTIGZSA-N (z)-octadec-9-en-1-amine Chemical compound CCCCCCCC\C=C/CCCCCCCCN QGLWBTPVKHMVHM-KTKRTIGZSA-N 0.000 description 1
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical group C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- YPFDHNVEDLHUCE-UHFFFAOYSA-N 1,3-propanediol Substances OCCCO YPFDHNVEDLHUCE-UHFFFAOYSA-N 0.000 description 1
- 229940035437 1,3-propanediol Drugs 0.000 description 1
- PWGJDPKCLMLPJW-UHFFFAOYSA-N 1,8-diaminooctane Chemical compound NCCCCCCCCN PWGJDPKCLMLPJW-UHFFFAOYSA-N 0.000 description 1
- XAZPKEBWNIUCKF-UHFFFAOYSA-N 1-[4-[4-[2-[4-[4-(2,5-dioxopyrrol-1-yl)phenoxy]phenyl]propan-2-yl]phenoxy]phenyl]pyrrole-2,5-dione Chemical compound C=1C=C(OC=2C=CC(=CC=2)N2C(C=CC2=O)=O)C=CC=1C(C)(C)C(C=C1)=CC=C1OC(C=C1)=CC=C1N1C(=O)C=CC1=O XAZPKEBWNIUCKF-UHFFFAOYSA-N 0.000 description 1
- YNSSPVZNXLACMW-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)-3-ethyl-5-methylphenyl]methyl]-2-ethyl-6-methylphenyl]pyrrole-2,5-dione Chemical compound C=1C(C)=C(N2C(C=CC2=O)=O)C(CC)=CC=1CC(C=C1CC)=CC(C)=C1N1C(=O)C=CC1=O YNSSPVZNXLACMW-UHFFFAOYSA-N 0.000 description 1
- RRQYJINTUHWNHW-UHFFFAOYSA-N 1-ethoxy-2-(2-ethoxyethoxy)ethane Chemical compound CCOCCOCCOCC RRQYJINTUHWNHW-UHFFFAOYSA-N 0.000 description 1
- BMVXCPBXGZKUPN-UHFFFAOYSA-N 1-hexanamine Chemical compound CCCCCCN BMVXCPBXGZKUPN-UHFFFAOYSA-N 0.000 description 1
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 1
- CDAWCLOXVUBKRW-UHFFFAOYSA-N 2-aminophenol Chemical group NC1=CC=CC=C1O CDAWCLOXVUBKRW-UHFFFAOYSA-N 0.000 description 1
- PQAMFDRRWURCFQ-UHFFFAOYSA-N 2-ethyl-1h-imidazole Chemical compound CCC1=NC=CN1 PQAMFDRRWURCFQ-UHFFFAOYSA-N 0.000 description 1
- BOZRCGLDOHDZBP-UHFFFAOYSA-N 2-ethylhexanoic acid;tin Chemical class [Sn].CCCCC(CC)C(O)=O BOZRCGLDOHDZBP-UHFFFAOYSA-N 0.000 description 1
- LXBGSDVWAMZHDD-UHFFFAOYSA-N 2-methyl-1h-imidazole Chemical group CC1=NC=CN1 LXBGSDVWAMZHDD-UHFFFAOYSA-N 0.000 description 1
- JZUHIOJYCPIVLQ-UHFFFAOYSA-N 2-methylpentane-1,5-diamine Chemical compound NCC(C)CCCN JZUHIOJYCPIVLQ-UHFFFAOYSA-N 0.000 description 1
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 1
- ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 2-phenyl-1h-imidazole Chemical compound C1=CNC(C=2C=CC=CC=2)=N1 ZCUJYXPAKHMBAZ-UHFFFAOYSA-N 0.000 description 1
- WADSJYLPJPTMLN-UHFFFAOYSA-N 3-(cycloundecen-1-yl)-1,2-diazacycloundec-2-ene Chemical compound C1CCCCCCCCC=C1C1=NNCCCCCCCC1 WADSJYLPJPTMLN-UHFFFAOYSA-N 0.000 description 1
- WVRNUXJQQFPNMN-VAWYXSNFSA-N 3-[(e)-dodec-1-enyl]oxolane-2,5-dione Chemical compound CCCCCCCCCC\C=C\C1CC(=O)OC1=O WVRNUXJQQFPNMN-VAWYXSNFSA-N 0.000 description 1
- UPMLOUAZCHDJJD-UHFFFAOYSA-N 4,4'-Diphenylmethane Diisocyanate Chemical compound C1=CC(N=C=O)=CC=C1CC1=CC=C(N=C=O)C=C1 UPMLOUAZCHDJJD-UHFFFAOYSA-N 0.000 description 1
- SXIFAEWFOJETOA-UHFFFAOYSA-N 4-hydroxy-butyl Chemical group [CH2]CCCO SXIFAEWFOJETOA-UHFFFAOYSA-N 0.000 description 1
- TYOXIFXYEIILLY-UHFFFAOYSA-N 5-methyl-2-phenyl-1h-imidazole Chemical compound N1C(C)=CN=C1C1=CC=CC=C1 TYOXIFXYEIILLY-UHFFFAOYSA-N 0.000 description 1
- SLXKOJJOQWFEFD-UHFFFAOYSA-N 6-aminohexanoic acid Chemical compound NCCCCCC(O)=O SLXKOJJOQWFEFD-UHFFFAOYSA-N 0.000 description 1
- ZLWGDCZQSWUXRV-UHFFFAOYSA-N 6-ethenyl-1h-triazine-2,4-diamine Chemical compound NN1NC(C=C)=CC(N)=N1 ZLWGDCZQSWUXRV-UHFFFAOYSA-N 0.000 description 1
- KNDQHSIWLOJIGP-UHFFFAOYSA-N 826-62-0 Chemical compound C1C2C3C(=O)OC(=O)C3C1C=C2 KNDQHSIWLOJIGP-UHFFFAOYSA-N 0.000 description 1
- 229910002704 AlGaN Inorganic materials 0.000 description 1
- 238000012935 Averaging Methods 0.000 description 1
- 229910052582 BN Inorganic materials 0.000 description 1
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- WBNDGSLYFAYVEU-UHFFFAOYSA-N C(=O)(CCCCCCCCC)OC(C)NN Chemical compound C(=O)(CCCCCCCCC)OC(C)NN WBNDGSLYFAYVEU-UHFFFAOYSA-N 0.000 description 1
- BGLMQLRJKGNVSN-UHFFFAOYSA-N C(CCCCCCCCCCCCCCCCC)(=O)OC(C)NN Chemical compound C(CCCCCCCCCCCCCCCCC)(=O)OC(C)NN BGLMQLRJKGNVSN-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 239000005750 Copper hydroxide Substances 0.000 description 1
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 description 1
- 102100029133 DNA damage-induced apoptosis suppressor protein Human genes 0.000 description 1
- MHZGKXUYDGKKIU-UHFFFAOYSA-N Decylamine Chemical compound CCCCCCCCCCN MHZGKXUYDGKKIU-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 239000004471 Glycine Substances 0.000 description 1
- WJYIASZWHGOTOU-UHFFFAOYSA-N Heptylamine Chemical compound CCCCCCCN WJYIASZWHGOTOU-UHFFFAOYSA-N 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- FQYUMYWMJTYZTK-UHFFFAOYSA-N Phenyl glycidyl ether Chemical compound C1OC1COC1=CC=CC=C1 FQYUMYWMJTYZTK-UHFFFAOYSA-N 0.000 description 1
- LGRFSURHDFAFJT-UHFFFAOYSA-N Phthalic anhydride Natural products C1=CC=C2C(=O)OC(=O)C2=C1 LGRFSURHDFAFJT-UHFFFAOYSA-N 0.000 description 1
- 239000005062 Polybutadiene Substances 0.000 description 1
- 239000002202 Polyethylene glycol Substances 0.000 description 1
- 239000004721 Polyphenylene oxide Substances 0.000 description 1
- 239000005700 Putrescine Substances 0.000 description 1
- FOIXSVOLVBLSDH-UHFFFAOYSA-N Silver ion Chemical compound [Ag+] FOIXSVOLVBLSDH-UHFFFAOYSA-N 0.000 description 1
- ORLQHILJRHBSAY-UHFFFAOYSA-N [1-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1(CO)CCCCC1 ORLQHILJRHBSAY-UHFFFAOYSA-N 0.000 description 1
- LUSFFPXRDZKBMF-UHFFFAOYSA-N [3-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCCC(CO)C1 LUSFFPXRDZKBMF-UHFFFAOYSA-N 0.000 description 1
- SNYVZKMCGVGTKN-UHFFFAOYSA-N [4-(4-cyanatophenoxy)phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1OC1=CC=C(OC#N)C=C1 SNYVZKMCGVGTKN-UHFFFAOYSA-N 0.000 description 1
- CNUHQZDDTLOZRY-UHFFFAOYSA-N [4-(4-cyanatophenyl)sulfanylphenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1SC1=CC=C(OC#N)C=C1 CNUHQZDDTLOZRY-UHFFFAOYSA-N 0.000 description 1
- BUPOATPDNYBPMR-UHFFFAOYSA-N [4-(4-cyanatophenyl)sulfonylphenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1S(=O)(=O)C1=CC=C(OC#N)C=C1 BUPOATPDNYBPMR-UHFFFAOYSA-N 0.000 description 1
- UUQQGGWZVKUCBD-UHFFFAOYSA-N [4-(hydroxymethyl)-2-phenyl-1h-imidazol-5-yl]methanol Chemical compound N1C(CO)=C(CO)N=C1C1=CC=CC=C1 UUQQGGWZVKUCBD-UHFFFAOYSA-N 0.000 description 1
- YIMQCDZDWXUDCA-UHFFFAOYSA-N [4-(hydroxymethyl)cyclohexyl]methanol Chemical compound OCC1CCC(CO)CC1 YIMQCDZDWXUDCA-UHFFFAOYSA-N 0.000 description 1
- JNCRKOQSRHDNIO-UHFFFAOYSA-N [4-[(4-cyanato-3,5-dimethylphenyl)methyl]-2,6-dimethylphenyl] cyanate Chemical compound CC1=C(OC#N)C(C)=CC(CC=2C=C(C)C(OC#N)=C(C)C=2)=C1 JNCRKOQSRHDNIO-UHFFFAOYSA-N 0.000 description 1
- AUYQDAWLRQFANO-UHFFFAOYSA-N [4-[(4-cyanatophenyl)methyl]phenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1CC1=CC=C(OC#N)C=C1 AUYQDAWLRQFANO-UHFFFAOYSA-N 0.000 description 1
- PPZSVSGWDQKBIW-UHFFFAOYSA-N [4-bis(4-cyanatophenoxy)phosphanyloxyphenyl] cyanate Chemical compound C1=CC(OC#N)=CC=C1OP(OC=1C=CC(OC#N)=CC=1)OC1=CC=C(OC#N)C=C1 PPZSVSGWDQKBIW-UHFFFAOYSA-N 0.000 description 1
- HYAOCWBXRFEHDV-UHFFFAOYSA-N [4-bis(4-cyanatophenoxy)phosphoryloxyphenyl] cyanate Chemical compound C=1C=C(OC#N)C=CC=1OP(OC=1C=CC(OC#N)=CC=1)(=O)OC1=CC=C(OC#N)C=C1 HYAOCWBXRFEHDV-UHFFFAOYSA-N 0.000 description 1
- 150000003926 acrylamides Chemical class 0.000 description 1
- 239000012790 adhesive layer Substances 0.000 description 1
- IBVAQQYNSHJXBV-UHFFFAOYSA-N adipic acid dihydrazide Chemical compound NNC(=O)CCCCC(=O)NN IBVAQQYNSHJXBV-UHFFFAOYSA-N 0.000 description 1
- 125000002723 alicyclic group Chemical group 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229960002684 aminocaproic acid Drugs 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 239000002518 antifoaming agent Substances 0.000 description 1
- 239000003963 antioxidant agent Substances 0.000 description 1
- 230000003078 antioxidant effect Effects 0.000 description 1
- 150000004982 aromatic amines Chemical class 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- RTJRHFSBKHHQEI-UHFFFAOYSA-N benzene-1,2,4-tricarbonitrile Chemical compound N#CC1=CC=C(C#N)C(C#N)=C1 RTJRHFSBKHHQEI-UHFFFAOYSA-N 0.000 description 1
- SGLGUTWNGVJXPP-UHFFFAOYSA-N benzene-1,3,5-tricarbonitrile Chemical compound N#CC1=CC(C#N)=CC(C#N)=C1 SGLGUTWNGVJXPP-UHFFFAOYSA-N 0.000 description 1
- UTTHLMXOSUFZCQ-UHFFFAOYSA-N benzene-1,3-dicarbohydrazide Chemical compound NNC(=O)C1=CC=CC(C(=O)NN)=C1 UTTHLMXOSUFZCQ-UHFFFAOYSA-N 0.000 description 1
- 230000001588 bifunctional effect Effects 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- CDQSJQSWAWPGKG-UHFFFAOYSA-N butane-1,1-diol Chemical compound CCCC(O)O CDQSJQSWAWPGKG-UHFFFAOYSA-N 0.000 description 1
- HMRDQEMTHMWRIK-UHFFFAOYSA-M butanoate;copper(1+) Chemical compound [Cu+].CCCC([O-])=O HMRDQEMTHMWRIK-UHFFFAOYSA-M 0.000 description 1
- JHIWVOJDXOSYLW-UHFFFAOYSA-N butyl 2,2-difluorocyclopropane-1-carboxylate Chemical compound CCCCOC(=O)C1CC1(F)F JHIWVOJDXOSYLW-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 150000001734 carboxylic acid salts Chemical class 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000007795 chemical reaction product Substances 0.000 description 1
- 239000007810 chemical reaction solvent Substances 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 229910001431 copper ion Inorganic materials 0.000 description 1
- AIZOEVVGUFTBBY-UHFFFAOYSA-M copper(1+) pentanoate Chemical compound [Cu+].CCCCC([O-])=O AIZOEVVGUFTBBY-UHFFFAOYSA-M 0.000 description 1
- RFKZUAOAYVHBOY-UHFFFAOYSA-M copper(1+);acetate Chemical compound [Cu+].CC([O-])=O RFKZUAOAYVHBOY-UHFFFAOYSA-M 0.000 description 1
- OFSVVXIGTQSFLD-UHFFFAOYSA-M copper(1+);decanoate Chemical compound [Cu+].CCCCCCCCCC([O-])=O OFSVVXIGTQSFLD-UHFFFAOYSA-M 0.000 description 1
- FSGSLHGEFPNBBN-UHFFFAOYSA-M copper(1+);formate Chemical compound [Cu+].[O-]C=O FSGSLHGEFPNBBN-UHFFFAOYSA-M 0.000 description 1
- GYODSEWTJIARDT-UHFFFAOYSA-M copper(1+);hexanoate Chemical compound [Cu+].CCCCCC([O-])=O GYODSEWTJIARDT-UHFFFAOYSA-M 0.000 description 1
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 1
- XVAMKCAOENGCIW-UHFFFAOYSA-M copper(1+);octanoate Chemical compound [Cu+].CCCCCCCC([O-])=O XVAMKCAOENGCIW-UHFFFAOYSA-M 0.000 description 1
- SWMPRGJXLJWZLV-UHFFFAOYSA-M copper(1+);propanoate Chemical compound [Cu+].CCC([O-])=O SWMPRGJXLJWZLV-UHFFFAOYSA-M 0.000 description 1
- PUHAKHQMSBQAKT-UHFFFAOYSA-L copper;butanoate Chemical compound [Cu+2].CCCC([O-])=O.CCCC([O-])=O PUHAKHQMSBQAKT-UHFFFAOYSA-L 0.000 description 1
- OBITVTZBIATBCL-UHFFFAOYSA-L copper;decanoate Chemical compound [Cu+2].CCCCCCCCCC([O-])=O.CCCCCCCCCC([O-])=O OBITVTZBIATBCL-UHFFFAOYSA-L 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- SMNMOEIFYRALNM-UHFFFAOYSA-L copper;hexanoate Chemical compound [Cu+2].CCCCCC([O-])=O.CCCCCC([O-])=O SMNMOEIFYRALNM-UHFFFAOYSA-L 0.000 description 1
- VNZQQAVATKSIBR-UHFFFAOYSA-L copper;octanoate Chemical compound [Cu+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O VNZQQAVATKSIBR-UHFFFAOYSA-L 0.000 description 1
- NBPFTDFXKORRKN-UHFFFAOYSA-L copper;pentanoate Chemical compound [Cu+2].CCCCC([O-])=O.CCCCC([O-])=O NBPFTDFXKORRKN-UHFFFAOYSA-L 0.000 description 1
- LZJJVTQGPPWQFS-UHFFFAOYSA-L copper;propanoate Chemical compound [Cu+2].CCC([O-])=O.CCC([O-])=O LZJJVTQGPPWQFS-UHFFFAOYSA-L 0.000 description 1
- 229930003836 cresol Natural products 0.000 description 1
- 150000001913 cyanates Chemical class 0.000 description 1
- IFDVQVHZEKPUSC-UHFFFAOYSA-N cyclohex-3-ene-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCC=CC1C(O)=O IFDVQVHZEKPUSC-UHFFFAOYSA-N 0.000 description 1
- QSAWQNUELGIYBC-UHFFFAOYSA-N cyclohexane-1,2-dicarboxylic acid Chemical compound OC(=O)C1CCCCC1C(O)=O QSAWQNUELGIYBC-UHFFFAOYSA-N 0.000 description 1
- INSRQEMEVAMETL-UHFFFAOYSA-N decane-1,1-diol Chemical compound CCCCCCCCCC(O)O INSRQEMEVAMETL-UHFFFAOYSA-N 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- 150000001991 dicarboxylic acids Chemical class 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- 229940019778 diethylene glycol diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 239000000539 dimer Substances 0.000 description 1
- XXBDWLFCJWSEKW-UHFFFAOYSA-N dimethylbenzylamine Chemical compound CN(C)CC1=CC=CC=C1 XXBDWLFCJWSEKW-UHFFFAOYSA-N 0.000 description 1
- 150000002009 diols Chemical class 0.000 description 1
- WEHWNAOGRSTTBQ-UHFFFAOYSA-N dipropylamine Chemical compound CCCNCCC WEHWNAOGRSTTBQ-UHFFFAOYSA-N 0.000 description 1
- SZXQTJUDPRGNJN-UHFFFAOYSA-N dipropylene glycol Chemical compound OCCCOCCCO SZXQTJUDPRGNJN-UHFFFAOYSA-N 0.000 description 1
- 239000002270 dispersing agent Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- JRBPAEWTRLWTQC-UHFFFAOYSA-N dodecylamine Chemical compound CCCCCCCCCCCCN JRBPAEWTRLWTQC-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229940093476 ethylene glycol Drugs 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000001530 fumaric acid Substances 0.000 description 1
- JMANVNJQNLATNU-UHFFFAOYSA-N glycolonitrile Natural products N#CC#N JMANVNJQNLATNU-UHFFFAOYSA-N 0.000 description 1
- 150000002334 glycols Chemical class 0.000 description 1
- PWSKHLMYTZNYKO-UHFFFAOYSA-N heptane-1,7-diamine Chemical compound NCCCCCCCN PWSKHLMYTZNYKO-UHFFFAOYSA-N 0.000 description 1
- ACCCMOQWYVYDOT-UHFFFAOYSA-N hexane-1,1-diol Chemical compound CCCCCC(O)O ACCCMOQWYVYDOT-UHFFFAOYSA-N 0.000 description 1
- NAQMVNRVTILPCV-UHFFFAOYSA-N hexane-1,6-diamine Chemical compound NCCCCCCN NAQMVNRVTILPCV-UHFFFAOYSA-N 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- 150000001261 hydroxy acids Chemical class 0.000 description 1
- 150000002460 imidazoles Chemical class 0.000 description 1
- 239000003112 inhibitor Substances 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 229910017053 inorganic salt Inorganic materials 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- LZKLAOYSENRNKR-LNTINUHCSA-N iron;(z)-4-oxoniumylidenepent-2-en-2-olate Chemical class [Fe].C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O.C\C(O)=C\C(C)=O LZKLAOYSENRNKR-LNTINUHCSA-N 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 150000007517 lewis acids Chemical class 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000314 lubricant Substances 0.000 description 1
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical compound OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 1
- 239000011976 maleic acid Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- 235000010755 mineral Nutrition 0.000 description 1
- 150000002763 monocarboxylic acids Chemical class 0.000 description 1
- 239000000178 monomer Substances 0.000 description 1
- GEMHFKXPOCTAIP-UHFFFAOYSA-N n,n-dimethyl-n'-phenylcarbamimidoyl chloride Chemical class CN(C)C(Cl)=NC1=CC=CC=C1 GEMHFKXPOCTAIP-UHFFFAOYSA-N 0.000 description 1
- SLCVBVWXLSEKPL-UHFFFAOYSA-N neopentyl glycol Chemical compound OCC(C)(C)CO SLCVBVWXLSEKPL-UHFFFAOYSA-N 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- FJDUDHYHRVPMJZ-UHFFFAOYSA-N nonan-1-amine Chemical compound CCCCCCCCCN FJDUDHYHRVPMJZ-UHFFFAOYSA-N 0.000 description 1
- FVXBCDWMKCEPCL-UHFFFAOYSA-N nonane-1,1-diol Chemical compound CCCCCCCCC(O)O FVXBCDWMKCEPCL-UHFFFAOYSA-N 0.000 description 1
- OEIJHBUUFURJLI-UHFFFAOYSA-N octane-1,8-diol Chemical compound OCCCCCCCCO OEIJHBUUFURJLI-UHFFFAOYSA-N 0.000 description 1
- 229940049964 oleate Drugs 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000002524 organometallic group Chemical group 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- CCDXIADKBDSBJU-UHFFFAOYSA-N phenylmethanetriol Chemical group OC(O)(O)C1=CC=CC=C1 CCDXIADKBDSBJU-UHFFFAOYSA-N 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- XQZYPMVTSDWCCE-UHFFFAOYSA-N phthalonitrile Chemical compound N#CC1=CC=CC=C1C#N XQZYPMVTSDWCCE-UHFFFAOYSA-N 0.000 description 1
- 239000000049 pigment Substances 0.000 description 1
- 239000011295 pitch Substances 0.000 description 1
- 229920002857 polybutadiene Polymers 0.000 description 1
- 229920000728 polyester Polymers 0.000 description 1
- 229920005906 polyester polyol Polymers 0.000 description 1
- 229920001223 polyethylene glycol Polymers 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000000379 polymerizing effect Effects 0.000 description 1
- 229920001296 polysiloxane Polymers 0.000 description 1
- 229920000166 polytrimethylene carbonate Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 230000003449 preventive effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000005060 rubber Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 239000011734 sodium Substances 0.000 description 1
- 229910000029 sodium carbonate Inorganic materials 0.000 description 1
- WSFQLUVWDKCYSW-UHFFFAOYSA-M sodium;2-hydroxy-3-morpholin-4-ylpropane-1-sulfonate Chemical class [Na+].[O-]S(=O)(=O)CC(O)CN1CCOCC1 WSFQLUVWDKCYSW-UHFFFAOYSA-M 0.000 description 1
- 125000001424 substituent group Chemical group 0.000 description 1
- 150000003871 sulfonates Chemical class 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 150000003512 tertiary amines Chemical class 0.000 description 1
- UFDHBDMSHIXOKF-UHFFFAOYSA-N tetrahydrophthalic acid Natural products OC(=O)C1=C(C(O)=O)CCCC1 UFDHBDMSHIXOKF-UHFFFAOYSA-N 0.000 description 1
- USFPINLPPFWTJW-UHFFFAOYSA-N tetraphenylphosphonium Chemical compound C1=CC=CC=C1[P+](C=1C=CC=CC=1)(C=1C=CC=CC=1)C1=CC=CC=C1 USFPINLPPFWTJW-UHFFFAOYSA-N 0.000 description 1
- 238000005979 thermal decomposition reaction Methods 0.000 description 1
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 1
- STDMRMREKPZQFJ-UHFFFAOYSA-H tricopper;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Cu+2].[Cu+2].[Cu+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O STDMRMREKPZQFJ-UHFFFAOYSA-H 0.000 description 1
- 239000011592 zinc chloride Substances 0.000 description 1
- 235000005074 zinc chloride Nutrition 0.000 description 1
- CHJMFFKHPHCQIJ-UHFFFAOYSA-L zinc;octanoate Chemical class [Zn+2].CCCCCCCC([O-])=O.CCCCCCCC([O-])=O CHJMFFKHPHCQIJ-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/04—Making non-ferrous alloys by powder metallurgy
- C22C1/0425—Copper-based alloys
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/05—Metallic powder characterised by the size or surface area of the particles
- B22F1/054—Nanosized particles
- B22F1/056—Submicron particles having a size above 100 nm up to 300 nm
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/102—Metallic powder coated with organic material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F1/00—Metallic powder; Treatment of metallic powder, e.g. to facilitate working or to improve properties
- B22F1/10—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material
- B22F1/107—Metallic powder containing lubricating or binding agents; Metallic powder containing organic material containing organic material comprising solvents, e.g. for slip casting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/18—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds
- B22F9/24—Making metallic powder or suspensions thereof using chemical processes with reduction of metal compounds starting from liquid metal compounds, e.g. solutions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
- H01B1/026—Alloys based on copper
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/14—Conductive material dispersed in non-conductive inorganic material
- H01B1/16—Conductive material dispersed in non-conductive inorganic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
- H01B1/20—Conductive material dispersed in non-conductive organic material
- H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F7/00—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression
- B22F7/02—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers
- B22F7/04—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal
- B22F2007/042—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method
- B22F2007/047—Manufacture of composite layers, workpieces, or articles, comprising metallic powder, by sintering the powder, with or without compacting wherein at least one part is obtained by sintering or compression of composite layers with one or more layers not made from powder, e.g. made from solid metal characterised by the layer forming method non-pressurised baking of the paste or slurry containing metal powder
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29298—Fillers
- H01L2224/29299—Base material
- H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/29347—Copper [Cu] as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
- H01L2224/838—Bonding techniques
- H01L2224/8384—Sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L24/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/09—Use of materials for the conductive, e.g. metallic pattern
- H05K1/092—Dispersed materials, e.g. conductive pastes or inks
- H05K1/097—Inks comprising nanoparticles and specially adapted for being sintered at low temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Nanotechnology (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Engineering (AREA)
- Materials Engineering (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Dispersion Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Metallurgy (AREA)
- Computer Hardware Design (AREA)
- Organic Chemistry (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Conductive Materials (AREA)
- Powder Metallurgy (AREA)
- Die Bonding (AREA)
- Manufacture Of Metal Powder And Suspensions Thereof (AREA)
Abstract
本发明提供一种被选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物包覆的铜粒子。
Description
技术领域
本发明涉及一种铜粒子、该铜粒子的制造方法、使用该铜粒子的铜膏和使用该铜膏制造的半导体装置以及电气/电子部件。
背景技术
伴随着半导体制品的大容量、高速处理化和微细布线化,需要处理在半导体制品运转中产生的热量,并关注使半导体制品散热的所谓的热管理。因此,一般采用在半导体制品上安装散热器、热沉等散热构件的方法等,并期待用于粘合散热构件的材料自身的导热率更高。
另一方面,根据半导体制品的形态,为使热管理更有效,采用将散热器粘合于半导体元件本身或将散热器粘合于粘合有半导体元件的引线框的芯片焊盘部(ダイパッド部)的方法,以及通过将芯片焊盘部暴露于封装表面来使其具有作为散热板的功能的方法等(例如,参照专利文献1)。
另外,还存在将半导体元件粘合到具有热通孔等散热机构的有机基板等的情况。在这种情况下,也要求粘合半导体元件的材料具有高导热性。另外,基于近年来发白色光的LED的高亮度化,也广泛用于全彩液晶屏幕的背光照明、天花灯或筒灯等照明装置。另外,由于发光元件的高输出化引起的高电流投入,可能产生粘合发光元件和基板的粘合剂因热和光等而变色,或电阻值随时间变化的情况。尤其是,在发光元件与基板之间的接合完全依赖于粘合剂的粘合力的方法中,存在在电子部件的焊接安装时,接合材料在焊料熔融温度下失去粘合力而剥离,以至不发光的风险。另外,由于发白色光的LED的高性能化会导致发光元件芯片的放热量增大,因此伴随于此,也需要提高LED的结构以及其中使用的构件的散热性。
特别是,近年来盛行开发一种使用功率损耗少的碳化硅(SiC)、氮化镓之类的宽带隙半导体的功率半导体装置,元件自身的耐热性高,能在由大电流产生的250℃以上的高温下工作。但是,为了发挥其特性,需要有效地释放工作放热时的发热,除了要求导电性和传热性之外,还要求长期高温耐热性优异的接合材料。
如此地,要求用于粘合半导体装置和电气/电子部件的各构件的材料(芯片粘接膏和散热构件粘合用材料等)具有高导热性。另外,这些材料同时还需要耐受在制品进行基板搭载时的回流焊接处理,此外,要求大面积粘合的情况也很多,为了控制因构成构件间的热膨胀系数不同而产生的翘曲等,还需要同时具有低应力性。
在此,通常,为了获得具有高导热性的粘合剂,需要将银粉、铜粉等金属填料和氮化铝、氮化硼等陶瓷系填料等作为填充剂,以高含有率分散于有机系粘合剂中(例如,参照专利文献2)。但是,其结果是,固化物的弹性模量升高,且难以同时具有良好的导热性和良好的回流焊接性(上述回流焊接处理后难以产生剥离)。
但是,最近,作为能耐受这样的要求的膏材料的候补,开始着眼于能在比块体银更低温的条件下进行接合的使用银纳米粒子的接合方法(例如,参照专利文献3)。
此外,虽然银粒子的导电性非常良好,但由于价格高和迁移风险,正在考虑替换成其他金属。因此,现在关注比银粒子便宜且具有耐迁移性的铜粒子。
另外,作为金属图案的形成方法,已知一种所谓的印刷电子线路法,该方法具有下述工序:使用丝网印刷、喷墨印刷等手法将含金、银、铜等金属粒子的膏、墨等导电材料施加到基材上的工序;以及加热施加到基材上的导电材料以使金属粒子融合,使其表达出导电性的导体化工序(例如,参照专利文献4)。
现有技术文献
专利文献
专利文献1:日本特开2006-086273号公报。
专利文献2:日本特开2005-113059号公报。
专利文献3:日本特开2011-240406号公报。
专利文献4:日本特开2016-160456号公报。
发明内容
发明要解决的课题
此外,使用印刷电子线路法形成的金属图案,与使用光刻法形成的金属图案相比,具有体积电阻率增高,与基材的粘合力降低的倾向。因此,需要能低温烧结且低电阻的膏。但是,当烧结温度低时,存在保存稳定性降低的风险。
另外,在金属图案用途中,比接合用途更需要耐迁移性。因此,需要耐迁移性比银粒子好的铜粒子制成的导电性膏。
但是,使用铜纳米粒子的接合,由于表达导电性需要300℃的高温,以及粒径小、难以控制氧化等,因此存在操作和处理费工夫的情况。此外,从除去表面氧化膜的观点出发,铜粒子的烧结需要在还原环境中进行烧结。
另外,尤其是,尽管研究开发的布线用铜纳米粒子能在相对低温下烧结,但在用于接合用的情况下,接合层内部与焊脚部在烧结速度和烧结度产生差异,从而难以获得可靠性高的接合体。
此外,由于在金属图案用途中要求耐迁移性,因此存在与银粒子相比,对使用铜粒子的导电性膏的要求更强的倾向。但是,由于在以往的铜膏中难以进行低电阻化,因此需要低温烧结且低电阻的印刷用铜膏。
另外,对于印刷电子线路等印刷用膏中使用的导电性膏,响应近年来布线细间距化的趋势,需要低电阻的导电层。
本发明是鉴于上述实情而完成的,提供一种耐氧化性优异、能低温烧结、接合层内部与焊脚部的烧结速度和烧结度均匀、涂膜形成性、接合特性良好的铜粒子,该铜粒子的制造方法,含有由该制造方法获得的铜粒子的铜膏,通过使用该铜膏而具有优异可靠性的半导体装置和电气/电子部件。
用于解决课题的手段
即,本申请公开涉及以下内容。
[1]一种铜粒子,其中,其被选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物包覆。
[2]上述[1]所述的铜粒子的制造方法,其中,使用(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,对(A)铜化合物进行还原。
[3]如上述[2]所述的铜粒子的制造方法,其中,其进一步包含(C)一水合肼。
[4]一种铜膏,其中,其包含上述[1]所述的铜粒子。
[5]一种半导体装置,其中,其是使用上述[4]所述的铜膏进行接合而成。
[6]一种电气/电子部件,其中,其是使用上述[4]所述的铜膏进行接合而成。
发明的效果
根据本发明,能够提供一种耐氧化性优异、能低温烧结、接合层内部与焊脚部的烧结速度和烧结度均匀、涂膜形成性、接合特性良好的铜粒子,该铜粒子的制造方法,含有由该制造方法获得的铜粒子的铜膏,通过使用该铜膏而具有优异可靠性的半导体装置和电气/电子部件。
具体实施方式
以下,参照一实施方式详细说明本发明。
<铜粒子>
本实施方式的铜粒子,被选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物包覆。
构成上述铜粒子的母体的铜粒子,衍生自铜化合物。只要是含铜原子的铜化合物,就没有特别的限定。作为铜化合物,例如,可举出羧酸铜、氧化铜、氢氧化铜、氮化铜等。作为铜化合物,从反应时的均匀性的观点出发,可以为羧酸铜。这些既可以单独使用,又可以联用两种以上。
作为羧酸铜,可举出甲酸铜(I)、乙酸铜(I)、丙酸铜(I)、丁酸铜(I)、戊酸铜(I)、己酸铜(I)、辛酸铜(I)、癸酸铜(I)、甲酸铜(II)、乙酸铜(II)、丙酸铜(II)、丁酸铜(II)、戊酸铜(II)、己酸铜(II)、辛酸铜(II)、癸酸铜(II)、柠檬酸铜(II)等羧酸铜酐或水合物。作为羧酸铜,从生产性和获得容易性的观点出发,可以为乙酸铜(II)一水合物。另外,这些既可以单独使用,又可以联用两种以上。
另外,可以使用市售的羧酸铜,也可以使用通过合成获得的羧酸铜。
羧酸铜的合成,能够使用公知的方法进行,例如,能够通过将氢氧化铜(II)和羧酸化合物混合并加热而获得。
作为氧化铜,可举出氧化铜(II)、氧化铜(I),从生产性的观点出发,可以为氧化铜(I)。另外,作为氢氧化铜,可举出氢氧化铜(II)、氢氧化铜(I)。
这些既可以单独使用,又可以联用两种以上。
本实施方式中使用的肼基乙醇和肼基乙醇盐,吸附在铜粒子的表面上,以使铜粒子稳定。由于肼基乙醇和肼基乙醇盐,在加热时,具有由热分解机构解吸和还原铜粒子的氧化层的作用,因此显著地增大铜粒子的烧结性。另外,从耐氧化性的观点出发,可以为肼基乙醇盐。
作为肼基乙醇盐包括有机盐型、无机盐型,可以为有机盐型。作为有机盐型,例如,可举出有机羧酸盐、有机磷酸盐、有机磺酸盐等。作为有机盐型,从合成时的溶解性的观点出发,可以为有机羧酸盐。
作为有机羧酸盐,例如,可举出肼基乙醇乙酸盐、肼基乙醇丙酸盐、肼基乙醇丁酸盐、肼基乙醇戊酸盐、肼基乙醇己酸盐、肼基乙醇庚酸盐、肼基乙醇辛酸盐、肼基乙醇壬酸盐、肼基乙醇癸酸盐、肼基乙醇硬脂酸盐、肼基乙醇油酸盐等。其中,从烧结性的观点出发,可以为肼基乙醇乙酸盐、肼基乙醇丙酸盐、肼基乙醇丁酸盐、肼基乙醇戊酸盐、肼基乙醇己酸盐、肼基乙醇庚酸盐、肼基乙醇辛酸盐、肼基乙醇壬酸盐,从耐氧化性的观点出发,可以为肼基乙醇戊酸盐、肼基乙醇己酸盐、肼基乙醇庚酸盐、肼基乙醇辛酸盐、肼基乙醇壬酸盐。这些既可以单独使用,又可以联用两种以上。
对于肼基乙醇盐而言,可以使用预先合成并分离的,也可以在制造铜粒子时原位(In-situ)合成并使用。
本实施方式铜粒子的平均粒径,从接合层的致密性的观点出发,可以为20~700nm,可以为50~400nm,可以为70~300nm。
需要说明的是,上述铜粒子的平均粒径是数均粒径,能够通过将由扫描电子显微镜(SEM)观察测定的10个以上粒子的粒径进行个数平均而求出。具体而言,能够通过实施例中记载的方法进行测定。
<铜粒子的制造方法>
本实施方式的铜粒子的制造方法,是使用(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,对(A)铜化合物进行还原。
(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,在100℃左右的相对高温度范围中对(A)铜化合物具有还原性。因此,通过将(A)铜化合物与(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物在100℃左右的相对高温下反应,由(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,还原(A)铜化合物,能够获得使用(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,包覆铜粒子表面的铜粒子。
(A)铜化合物以及(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,分别能够使用<铜粒子>部分示例的化合物。
在本实施方式的铜粒子的制造方法中,从进一步提高烧结性的观点出发,还可以包含(C)一水合肼。在(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,还原(A)铜化合物的情况下,当生成作为副产物的胺化合物等时,存在该胺化合物等包覆铜粒子并阻碍烧结的风险。
另一方面,(C)一水合肼在室温(25℃)条件下具有还原性。因此,通过利用(C)一水合肼在室温附近的低温度范围下具有还原性,不与(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物的还原反应竞争,就优先进行(C)一水合肼的反应,能够获得烧结性进一步优异的铜粒子。
在本实施方式的铜粒子的制造方法中,可以使用烷基胺。通过使用烷基胺,提高生成的铜粒子的分散性。
烷基胺只要是作为与氨基键合的基团具有烷基等脂肪族烃基的胺化合物,就对其结构没有特别的限制,例如,可举出具有一个氨基的烷基单胺、具有两个氨基的烷基二胺等。需要说明的是,上述烷基还可以进一步具有取代基。
具体而言,作为烷基单胺,可举出二丙胺、丁胺、二丁胺、己胺、环己胺、庚胺、辛胺、壬胺、癸胺、3-氨基丙基三乙氧基硅烷、十二烷基胺、油胺等。另外,作为烷基二胺,可举出乙二胺、N,N-二甲基乙二胺、N,N’-二甲基乙二胺、N,N-二乙基乙二胺、N,N’-二乙基乙二胺、1,3-丙二胺、2,2-二甲基-1,3-丙二胺、N,N-二甲基-1,3-二氨基丙烷、N,N’-二甲基-1,3-二氨基丙烷、N,N-二乙基-1,3-二氨基丙烷、1,4-二氨基丁烷、1,5-二氨基-2-甲基戊烷、1,6-二氨基己烷、N,N’-二甲基-1,6-二氨基己烷、1,7-二氨基庚烷、1,8-二氨基辛烷等。这些既可以单独使用,又可以联用两种以上。
在本实施方式的铜粒子的制造方法中,可以使用脂肪族羧酸。通过使用脂肪族羧酸,提高生成的铜粒子的分散性。
作为脂肪族羧酸,例如,可举出甲酸、乙酸、丙酸、丁酸、戊酸、己烷酸、辛酸(caprylic acid)、辛酸(octylic acid)、壬酸、癸酸、油酸、硬脂酸、异硬脂酸等单羧酸;草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、二乙醇酸等二羧酸;苯甲酸、邻苯二甲酸、间苯二甲酸、对苯二甲酸、水杨酸、没食子酸等芳香族羧酸;乙醇酸、乳酸、亚酒石酸、苹果酸、甘油酸、羟基丁酸、酒石酸、柠檬酸、异柠檬酸等羟基酸等。这些既可以单独使用,又可以联用两种以上。
在本实施方式的铜粒子的制造方法中,可以使用有机溶剂。对于有机溶剂而言,只要是能够用作不阻碍由混合上述各原料获得的混合物而生成的络合物等的性质的反应溶剂,就能够没有特别限定地使用。有机溶剂可以使用醇。
另外,由于(C)一水合肼的铜离子还原反应是放热反应,因此可以是还原反应中不挥发的有机溶剂。有机溶剂可以是沸点为70℃以上,且由碳、氢和氧构成。
作为用作有机溶剂的上述醇,可举出1-丙醇、2-丙醇、丁醇、戊醇、己醇、庚醇、辛醇、乙二醇、1,3-丙二醇、1,2-丙二醇、丁基卡必醇、丁基卡必醇乙酸酯、乙基卡必醇、乙基卡必醇乙酸酯、二乙二醇二乙醚、丁基溶纤剂等。这些既可以单独使用,又可以联用两种以上。
(混合物的形成)
在使用有机溶剂的情况下,首先,将有机溶剂收纳于反应容器中,在该有机溶剂中,混合(A)铜化合物、(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物、(C)一水合肼和进一步根据需要添加的烷基胺、脂肪族羧酸。这些化合物的混合顺序没有特别的限定,可以以任意顺序混合上述化合物。
在上述混合中,(A)铜化合物、(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物和(C)一水合肼的使用量,相对于(A)铜化合物1mol,可以是(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物为0.1~10mol、(C)一水合肼为0.3~5mol,也可以是(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物为0.2~5mol、(C)一水合肼为0.5~3mol。
另外,烷基胺的使用量,相对于(A)铜化合物1mol,可以为0.5~5mol,可以为0.5~3mol。另外,脂肪族羧酸的使用量,相对于(A)铜化合物1mol,可以为0.5~5mol,可以为0.5~3mol。
有机溶剂只要是能够使上述各成分充分进行反应的量即可,例如,可以使用50~2000mL左右。
(混合物的加热)
接着,在混合物的加热工序中,充分地加热上述混合获得的混合物,以进行(A)铜化合物的还原反应。通过该加热,能够除去未反应的(A)铜化合物,并能够使金属铜良好地析出并成长,以形成铜粒子。
此时,(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物通过附着在铜粒子的表面上并抑制成长,而具有防止粒子粗大化的作用。
上述混合物加热时的加热温度,是能够使(A)铜化合物热分解和还原,从而生成铜粒子的温度,例如,可以为25~150℃,可以为25~120℃。此外,加热温度可以低于上述(A)~(C)成分和有机溶剂的沸点。当加热温度在上述范围时,在有效地生成铜粒子的同时,在除了(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物之外,还联用脂肪族羧酸和/或烷基胺的情况下,可抑制这些挥发。
另外,当加热温度小于25℃时,难以发生(A)铜化合物的定量还原反应,存在未分解的铜化合物残存的风险。另外,当加热温度超过150℃时,(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物的挥发量变得过多,存在体系中变得不均匀的风险。
在使用(C)一水合肼制造本实施方式的铜粒子的情况下,可以在0℃~80℃、1~72小时的条件下进行第一阶段的还原反应,接着在60~150℃、0.1~10小时的条件下进行第二阶段的还原反应。
由此,能够抑制(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物的还原反应,与(C)一水合肼的还原反应的竞争,并减少因副产物的生成引起的烧结性降低。
<铜膏>
本实施方式的铜膏,由于包含上述铜粒子,因此能够获得在耐氧化性优异且保存稳定性优异的同时,能低温烧结,接合层内部与焊脚部的烧结速度和烧结度均匀,且接合特性良好的固化物。因此,本实施方式的铜膏能够用作元件粘合用芯片粘接膏和散热构件粘合用材料。
另外,本实施方式的铜膏可以联用两个以上不同平均粒径的铜粒子。例如,具有比该第一铜粒子的平均粒径大的平均粒径的第二铜粒子的平均粒径,可以为第一铜粒子的平均粒径的2~10倍左右。另外,第二铜粒子的配合量可以为第一铜粒子的配合量的1.5~10倍左右。
本实施方式的铜膏,除了上述铜粒子以外,还可以含有粒径比上述铜粒子大的大粒径铜粒子、热固化性树脂、有机溶剂和其他添加剂。由此,可缓和铜粒子烧结收缩的影响,能进一步形成可靠性高的接合层。
(大粒径铜粒子)
大粒径铜粒子的平均粒径可以为大于1μm且30μm以下,也可以为2~20μm。
另外,形状没有特别的限定,能够使用球状、板型、片状、鳞片状、树枝状、棒状、线状等。
需要说明的是,上述大粒径铜粒子的平均粒径,能够使用激光衍射散射式粒度分布测定装置等进行测定。
可以使用由润滑剂、防锈剂处理的上述大粒径铜粒子。作为这样的处理,典型的是使用羧酸化合物进行处理。作为羧酸化合物,例如,可举出甲酸、乙酸、丙酸、丁酸、戊酸、己酸、辛酸(caprylic acid)、辛酸(octylic acid)、壬酸、癸酸、棕榈酸、油酸、硬脂酸、异硬脂酸、草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、二乙醇酸、苯甲酸、邻苯二甲酸、间苯二甲酸、对苯二甲酸、水杨酸、没食子酸、乙醇酸、乳酸、亚酒石酸、苹果酸、甘油酸、羟基丁酸、酒石酸、柠檬酸、异柠檬酸等。从与铜粒子烧结性的观点出发,羧酸化合物可以为甲酸、乙酸、丙酸、丁酸、戊酸、己酸、辛酸(caprylic acid)、辛酸(octylicacid)、壬酸、癸酸、棕榈酸、油酸、硬脂酸、异硬脂酸、草酸、丙二酸、琥珀酸、戊二酸,从铜粒子的分散性和耐氧化性的观点出发,可以为己酸、辛酸(caprylic acid)、辛酸(octylicacid)、壬酸、癸酸、丙二酸、琥珀酸、戊二酸。
(热固化性树脂)
热固化性树脂只要是通常用作粘合剂用途的热固化性树脂,就能够没有特别限定地使用。热固化性树脂可以为液态树脂,可以是在室温(25℃)条件下为液态的树脂。作为上述热固化性树脂,例如,可举出氰酸酯树脂、环氧树脂、自由基聚合性丙烯酸树脂、马来酰亚胺树脂等。这些既可以单独使用,又可以联用两种以上。
通过使本实施方式的铜膏包含热固化性树脂,能够成为具有适度粘度的粘合材料(膏)。另外,当本实施方式的铜膏包含热固化性树脂时,其固化时的反应热使铜膏的温度上升,从而促进铜粒子的烧结性。
氰酸酯树脂是分子内具有-NCO基的化合物,通过加热使-NCO基反应而形成三维网状结构,从而固化的树脂。氰酸酯树脂的具体例子,可举出1,3-二氰氧基苯、1,4-二氰氧基苯、1,3,5-三氰氧基苯、1,3-二氰氧基萘、1,4-二氰氧基萘、1,6-二氰氧基萘、1,8-二氰氧基萘、2,6-二氰氧基萘、2,7-二氰氧基萘、1,3,6-三氰氧基萘、4,4’-二氰氧基联苯基、双(4-氰氧基苯基)甲烷、双(3,5-二甲基-4-氰氧基苯基)甲烷、2,2-双(4-氰氧基苯基)丙烷、2,2-双(3,5-二溴-4-氰氧基苯基)丙烷、双(4-氰氧基苯基)醚、双(4-氰氧基苯基)硫醚、双(4-氰氧基苯基)砜、三(4-氰氧基苯基)亚磷酸酯、三(4-氰氧基苯基)磷酸酯、以及酚醛清漆树脂与卤化氰反应而获得的氰酸酯类等。另外,氰酸酯树脂还能够使用将这些多官能氰酸酯树脂的氰酸酯基三聚而形成的具有三嗪环的预聚物。可通过将例如矿酸或路易斯酸等酸、醇钠或叔胺类等碱、碳酸钠等盐类作为催化剂,使上述多官能氰酸酯树脂单体聚合而获得该预聚物。
能够使用一般公知的氰酸酯树脂的固化促进剂。例如,可举出辛酸锌、辛酸锡、环烷酸钴、环烷酸锌、乙酰丙酮铁等有机金属络合物,氯化铝、氯化锡、氯化锌等金属盐,三乙基胺、二甲基苄基胺等胺类,但不限定于这些。这些固化促进剂能够使用一种或混合使用两种以上。
环氧树脂是分子内具有一个以上缩水甘油基的化合物,通过加热使缩水甘油基反应而形成三维网状结构,从而固化的树脂。一分子中可以包含两个以上缩水甘油基。这是由于仅具有一个缩水甘油基的化合物中,即使反应也无法示出充分的固化物特性。一分子中包含两个以上缩水甘油基的化合物,能够通过将具有两个以上羟基的化合物环氧化而获得。作为这样的化合物,可举出通过将双酚A、双酚F、联苯酚等双酚化合物或这些的衍生物,氢化双酚A、氢化双酚F、氢化联苯酚、环己二醇、环己烷二甲醇、环己烷二乙醇等具有脂环结构的二醇或这些的衍生物,丁二醇、己二醇、辛二醇、壬二醇、癸二醇等脂肪族二醇或这些的衍生物等环氧化而获得的双官能的物质;将具有三羟基苯基甲烷骨架、氨基酚骨架的化合物等环氧化而获得的三官能的物质;将苯酚酚醛清漆树脂、甲酚酚醛清漆树脂、苯酚芳烷基树脂、联苯芳烷基树脂、萘酚芳烷基树脂等环氧化而获得的多官能的物质等,但不限定于这些。另外,由于上述环氧树脂作为接合用膏在室温(25℃)条件下呈膏状,因此既可以单独使用,或者可以是作为混合物在室温(25℃)条件下呈液态的物质。也能如通常那样使用反应性稀释剂。作为反应性稀释剂,可举出苯基缩水甘油醚、甲苯基缩水甘油醚等单官能的芳香族缩水甘油醚类、脂肪族缩水甘油醚类等。
此时,以将环氧树脂固化为目的使用固化剂,作为环氧树脂的固化剂,例如,可举出脂肪族胺、芳香族胺、双氰胺、二酰肼化合物、酸酐、酚醛树脂等。作为二酰肼化合物,可举出己二酸二酰肼、十二烷酸二酰肼、间苯二甲酸二酰肼、对氧基苯甲酸二酰肼等羧酸二酰肼等,作为酸酐,可举出邻苯二甲酸酐、四氢邻苯二甲酸酐、六氢邻苯二甲酸酐、内亚甲基四氢邻苯二甲酸酐、十二烯基琥珀酸酐、马来酸酐与聚丁二烯的反应物、马来酸酐与苯乙烯的共聚物等。
此外,为了促进固化能够配合固化促进剂,作为环氧树脂的固化促进剂,可举出咪唑类、三苯基膦或四苯基膦及这些的盐类,二氮杂二环十一碳烯等胺系化合物及其盐类等。固化促进剂可以为2-甲基咪唑、2-乙基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑、2-苯基-4-甲基-5-羟甲基咪唑、2-苯基-4,5-二羟甲基咪唑、2-C11H23-咪唑、2-甲基咪唑与2,4-二氨基-6-乙烯基三嗪的加成产物等咪唑化合物。可以是熔点为180℃以上的咪唑化合物。
自由基聚合性的丙烯酸树脂是分子内具有(甲基)丙烯酰基的化合物,是通过(甲基)丙烯酰基反应形成三维网状结构,从而固化的树脂。分子内可以包含一个以上(甲基)丙烯酰基。
在此,作为丙烯酸树脂,例如,可举出2-羟乙基(甲基)丙烯酸酯、2-羟丙基(甲基)丙烯酸酯、3-羟丙基(甲基)丙烯酸酯、2-羟丁基(甲基)丙烯酸酯、3-羟丁基(甲基)丙烯酸酯、4-羟丁基(甲基)丙烯酸酯、1,2-环己二醇单(甲基)丙烯酸酯、1,3-环己二醇单(甲基)丙烯酸酯、1,4-环己二醇单(甲基)丙烯酸酯、1,2-环己烷二甲醇单(甲基)丙烯酸酯、1,3-环己烷二甲醇单(甲基)丙烯酸酯、1,4-环己烷二甲醇单(甲基)丙烯酸酯、1,2-环己烷二乙醇单(甲基)丙烯酸酯、1,3-环己烷二乙醇单(甲基)丙烯酸酯、1,4-环己烷二乙醇单(甲基)丙烯酸酯、甘油单(甲基)丙烯酸酯、甘油二(甲基)丙烯酸酯、三羟甲基丙烷单(甲基)丙烯酸酯、三羟甲基丙烷二(甲基)丙烯酸酯、季戊四醇单(甲基)丙烯酸酯、季戊四醇二(甲基)丙烯酸酯、季戊四醇三(甲基)丙烯酸酯、新戊基二醇单(甲基)丙烯酸酯等具有羟基的(甲基)丙烯酸酯,以及通过使这些具有羟基的(甲基)丙烯酸酯与二羧酸或其衍生物反应而获得的具有羧基的(甲基)丙烯酸酯等。在此,作为能使用的二羧酸,例如,可举出草酸、丙二酸、琥珀酸、戊二酸、己二酸、庚二酸、辛二酸、壬二酸、癸二酸、马来酸、富马酸、邻苯二甲酸、四氢邻苯二甲酸、六氢邻苯二甲酸及这些的衍生物等。
另外,作为丙烯酸树脂,可举出分子量为100~10000的聚醚、聚酯、聚碳酸酯、聚(甲基)丙烯酸酯中具有(甲基)丙烯基的化合物、具有羟基的(甲基)丙烯酸酯、具有羟基的(甲基)丙烯酰胺等。
马来酰亚胺树脂是一分子内包含一个以上马来酰亚胺基的化合物,通过加热使马来酰亚胺基反应而形成三维网状结构,从而固化的树脂。例如,可举出N,N’-(4,4’-二苯基甲烷)双马来酰亚胺、双(3-乙基-5-甲基-4-马来酰亚胺苯基)甲烷、2,2-双[4-(4-马来酰亚胺苯氧基)苯基]丙烷等双马来酰亚胺树脂。马来酰亚胺树脂可以为二聚酸二胺与马来酸酐的反应获得的化合物、马来酰亚胺乙酸、马来酰亚胺己酸等马来酰亚胺化氨基酸与多元醇反应获得的化合物。通过马来酸酐与氨基乙酸或氨基己酸反应而获得马来酰亚胺化氨基酸,作为多元醇,可以为聚醚多元醇、聚酯多元醇、聚碳酸酯多元醇、聚(甲基)丙烯酸酯多元醇,可以不含芳香族环。
在此,在配合热固化性树脂的情况下,当上述铜粒子和大粒径铜粒子的总量为100质量份时,配合1~20质量份。当热固化性树脂为1质量份以上时,能够通过热固化性树脂充分地获得粘合力,当热固化性树脂为20质量份以下时,能够控制铜成分的比例降低,从而充分地确保高导热性,且能够提高散热性。另外,当有机成分过多时,可抑制光和热导致的劣化,其结果是,能够延长发光装置的寿命。在这样的配合范围中,利用热固化性树脂的粘合性能,能够容易地控制铜粒子和/或大粒径铜粒子相互接触,并保持粘合层整体的机械强度。
(有机溶剂)
有机溶剂只要是作为还原剂发挥功能的溶剂,就能够使用公知的溶剂。
作为上述有机溶剂,可以为醇,例如,可举出脂肪族多元醇。作为脂肪族多元醇,例如,可举出乙二醇、二乙二醇、丙二醇、二丙二醇、1,4-丁二醇、甘油、聚乙二醇等二醇类等。这些有机溶剂既可以单独使用,又可以联用两种以上。
通过使用醇作为有机溶剂,由于在膏固化(烧结)时的热处理而变成高温,从而增大醇的还原力。部分存在于铜粒子中的氧化铜和金属基板上的氧化金属(例如,氧化铜),被醇还原成纯金属,作为结果,认为能够形成更致密且导电性高、与基板的密合性高的固化膜。另外,通过夹在半导体元件与金属基板之间,在膏固化时的热处理中,醇处于部分回流状态,作为溶剂的醇不会通过挥发立即从体系中消失,从而能够在沸点以上的膏固化温度下更有效地还原氧化金属。
有机溶剂的沸点,具体而言,可以为100~300℃,可以为150~290℃。当有机溶剂的沸点为100℃以上时,即使在常温挥发性也不会变得过高,能够控制分散剂的挥发引起的还原能力的降低,从而能够获得稳定的粘合强度。另外,当有机溶剂的沸点为300℃以下时,容易发生固化膜(导电膜)的烧结,从而能够形成致密性优异的膜。另外,沸点为300℃以下的有机溶剂,在烧结时可通过挥发容易地除去。
在配合有机溶剂的情况下,其配合量,当上述铜粒子和大粒径铜粒子的总量为100质量份时,可以为7~20质量份。当有机溶剂的配合量为7质量份以上时,粘度不会变得过高且能够提高操作性,当20质量份以下时,能够控制粘度降低,控制铜膏中铜粒子的下沉,并提高可靠性。
在本实施方式的铜膏中,除了以上各成分之外,在不阻碍本实施方式的效果的范围内,能够根据需要配合在这种组合物中通常配合的固化促进剂、橡胶、硅酮等低应力化剂、偶联剂、消泡剂、表面活性剂、着色剂(颜料、染料)、各种阻聚剂、抗氧化剂、溶剂、其他各种添加剂。这些各添加剂既可以单独使用任一种,又可以联用两种以上。
本实施方式的铜膏,能够在充分地混合上述铜粒子和根据需要配合的大粒径铜粒子、热固化性树脂、有机溶剂、偶联剂等添加剂等后,进一步通过分散机、捏合机、三辊磨机等进行混炼处理,接着,通过脱泡进行制备。
本实施方式的铜膏(或墨)的粘度没有特别的限制,能够根据使用用途/方法来选择。例如,在用于接合用途的情况下,可以为20~300Pa·s,可以为40~200Pa·s。另外,在用于金属图案的情况下,丝网印刷法中的粘度可以为0.1~30Pa·s,喷墨印刷法中,取决于使用的喷墨头的标准,粘度可以为0.1~30mPa·s。粘度的调整可以根据溶剂的含量进行调整。
上述粘度是使用E型粘度计(3°锥体)在25℃条件下测定的值。具体而言,能够通过实施例中记载的方法进行测定。
另外,本实施方式的铜膏的接合强度,可以为25MPa以上,可以为30MPa以上。
需要说明的是,能够通过实施例中记载的方法测定上述接合强度。
这样获得的本实施方式的铜膏具有高导热性、且散热性优异。因此,当用作元件或散热构件与基板等的接合材料时,能够改善装置内部的热向外部的扩散性,以使制品特性稳定。
<半导体装置和电气/电子部件>
本实施方式的半导体装置和电气/电子部件,由于使用上述铜膏进行接合而成,因此可靠性优异。
本实施方式的半导体装置,是通过使用上述铜膏,将半导体元件粘合在作为元件支撑构件的基板上而形成的。即,此处,铜膏用作芯片粘接膏,经由该膏将半导体元件与基板粘合并固定。
此处,半导体元件只要是公知的半导体元件即可,例如,可举出晶体管、二极管等。此外,作为该半导体元件,可举出LED等发光元件。另外,发光元件的种类没有特别的限制,例如,可举出通过MOBVC法等在基板上将InN、AlN、GaN、InGaN、AlGaN、InGaAlN等氮化物半导体作为发光层形成的发光元件。
另外,作为元件支撑构件,可举出使用铜、铜镀铜、PPF(预镀引线框)、玻璃环氧、陶瓷等材料形成的支撑构件。
本实施方式的铜膏,还能够接合未进行金属镀敷处理的基材。这样获得的半导体装置,相对于安装后的温度循环,连接可靠性与以往相比有显著提高。另外,由于电阻值足够小且随时间变化少,因此具有即使长时间驱动,输出随时间减少也少且寿命长的优点。
另外,本实施方式的电气/电子部件,是通过使用上述铜膏,将散热构件粘合在放热构件上而形成的。即,在此,铜膏用作散热构件粘合用材料,经由该铜膏将散热构件与放热构件粘合并固定。
作为放热构件,可以是上述半导体元件或具有该半导体元件的构件,也可以是除此之外的放热构件。作为半导体元件以外的放热构件,可举出光拾取器、功率晶体管等。另外,作为散热构件,可举出热沉、散热器等。
如此地,通过使用上述铜膏将散热构件粘合在放热构件上,可以将由放热构件产生的热量从散热构件高效地向外部释放,并能够抑制放热构件的温度上升。需要说明的是,可以经由铜膏直接粘合放热构件与散热构件,也可以中间夹持其他导热率高的构件来间接粘合。
实施例
接着,通过实施例具体说明本发明,本发明完全不限定于这些例子。
(铜粒子的制造)
[合成例1]
将作为(A)铜化合物的乙酸铜(II)一水合物(东京化成工业株式会社制,商品名:乙酸铜(II)一水合物)20mmol、(B)肼基乙醇(东京化成工业株式会社制,商品名:羟乙基肼)40mmol、作为有机溶剂的丁基溶纤剂(东京化成工业株式会社制)3mL装入50mL的样品瓶中,在铝块式(alumi-block)加热搅拌机中,在100℃条件下搅拌120分钟。在5分钟后,添加乙醇(关东化学株式会社制,特级)2mL,通过离心分离(4000rpm(1分钟))获得固体物。将该离心分离的固体物减压干燥,从而获得了使用肼基乙醇保护表面的具有铜光泽的粉体状铜粒子1(平均粒径120nm、产量1.25g、收率98.0%)。
[合成例2]
将壬酸(东京化成工业株式会社制,商品名:壬酸)40mmol、肼基乙醇(东京化成工业株式会社制,商品名:羟乙基肼)40mmol装入50mL的样品瓶中,在60℃条件下搅拌15分钟,从而合成(B)肼基乙醇壬酸盐。此后,将获得的(B)肼基乙醇壬酸盐40mmol、作为(A)铜化合物的乙酸铜(II)一水合物(东京化成工业株式会社制,商品名:乙酸铜(II)一水合物)20mmol、作为有机溶剂的丁基溶纤剂(东京化成工业株式会社制)3mL装入50mL的样品瓶中,在铝块式加热搅拌机中,在100℃条件下搅拌120分钟。在5分钟后,添加乙醇(关东化学株式会社制,特级)2mL,通过离心分离(4000rpm(1分钟))获得固体物。将该离心分离的固体物减压干燥,从而获得了使用肼基乙醇壬酸盐保护表面的具有铜光泽的粉体状铜粒子2(平均粒径90nm、产量1.26g、收率98.4%)。
[合成例3]
将作为(A)铜化合物的乙酸铜(II)一水合物(东京化成工业株式会社制,商品名:乙酸铜(II)一水合物)20mmol、(B)肼基乙醇(东京化成工业株式会社制,商品名:羟乙基肼)40mmol、作为有机溶剂的丁基溶纤剂(东京化成工业株式会社制)3mL装入50mL的样品瓶中,在25℃条件下混合5分钟。接着,向该混合物中,添加在1-丙醇3mL中溶解了20mmol(C)一水合肼(日本富士胶片和光纯药株式会社制,商品名:一水合肼)的溶液,在铝块式加热搅拌机中,在25℃条件下混合4小时。通过进一步地升温至100℃混合1小时,获得了使用肼基乙醇保护表面的具有铜光泽的粉体状铜粒子3(平均粒径140nm、产量1.24g、收率96.9%)。
[合成例4]
将壬酸(东京化成工业株式会社制,商品名:壬酸)40mmol、肼基乙醇(东京化成工业株式会社制,商品名:羟乙基肼)40mmol装入50mL的样品瓶中,在60℃条件下搅拌15分钟,从而合成(B)肼基乙醇壬酸盐。此后,将获得的(B)肼基乙醇壬酸盐40mmol、作为(A)铜化合物的乙酸铜(II)一水合物(东京化成工业株式会社制、商品名:乙酸铜(II)一水合物)20mmol、作为有机溶剂的丁基溶纤剂(东京化成工业株式会社制)3mL装入50mL的样品瓶中,在25℃条件下混合5分钟。接着,向该混合物中,添加在1-丙醇3mL中溶解了20mmol(C)一水合肼(日本富士胶片和光纯药株式会社制,商品名:一水合肼)的溶液,在铝块式加热搅拌机中,在25℃条件下混合4小时。通过进一步地升温至100℃混合1小时,获得了使用肼基乙醇壬酸盐保护表面的具有铜光泽的粉体状铜粒子4(平均粒径90nm、产量1.25g、收率97.7%)。
[合成例5]
除了使用辛胺(东京化成工业株式会社制,商品名:正辛胺)40mmol代替(B)肼基乙醇以外,与合成例3相同地获得具有铜光泽的粉体状铜粒子5(平均粒径90nm、产量1.25g、收率97.8%)。
需要说明的是,上述铜粒子1~5的平均粒径,是基于扫描电子显微镜(株式会社日立高科技术公司((株)日立ハイテクノロジーズ)制,商品名:S-3400NX)的观察图像,算出的任意选择的10个铜粒子(n=10)的平均值。
[表1]
(实施例1)
以合成例1中获得的铜粒子1为100质量份、作为有机溶剂的二乙二醇(东京化成工业株式会社制)为15质量份的方式制备,使用辊进行混炼,以获得铜膏。
(实施例2~4和比较例1)
除了变更成表2中记载的种类和配合量的各成分以外,与实施例1相同地获得铜膏。
使用以下方法评价上述各实施例和比较例中获得的铜膏。将其结果示于表2。
<铜膏的评价方法>
[粘度]
使用E型粘度计(东机产业株式会社制,制品名:VISCOMETER-TV22,适用锥板型转子:3°×R17.65),测定25℃、5rpm条件下的值。
[适用期]
测定铜膏在放置于25℃的恒温槽内时的粘度,并测定该粘度增加到上述[粘度]中测定的值(初期粘度)的1.5倍以上为止的天数。
[耐氧化性(还原性)]
在氮环境下对获得的铜膏进行X射线衍射(XRD),从室温(25℃)至300℃,以3℃/min的条件进行升温测定,获得25℃、150℃和200℃的XRD曲线。此外,通过RIR(参照强度比)法由Cu、CuO、Cu2O的各成分的最强线峰的积分强度比进行含量的定量,由下式(1)算出氧化度。
[数1]
氧化度(%)=([CuO]+[Cu2O])/([Cu]+[CuO]+[Cu2O])×100 (1)
需要说明的是,式(1)中,[Cu]表示铜粒子中铜(Cu)的含量(质量%),[CuO]表示铜粒子中氧化铜(II)的含量(质量%),[Cu2O]表示铜粒子中氧化铜(I)的含量(质量%)。
[烧结性]
通过丝网印刷法在玻璃基板(厚度1mm)上,以厚度成为25μm的方式涂布铜膏,在150℃条件下固化60分钟或在200℃条件下固化60分钟。使用Loresta GP(ロレスタGP)(商品名,株式会社三菱化学分析科技制),通过四端针法测定获得的烧结膜的电阻。小于1.0×10-5Ω·m记作“A”,1.0×10-5Ω·m~5.0×10-5Ω·m记作“B”,超过5.0×10-5Ω·m记作“C”。
<半导体装置的评价方法>
[接合强度]
使用铜膏将在2mm×2mm的接合面设置了金蒸镀层的硅芯片,安装到纯铜框架和PPF(镀Ni-Pd/Au的铜框架)上,在氮(3%氢)环境下,在200℃条件下固化60分钟。在固化后和吸湿处理(85℃,相对湿度85%,72小时)后,分别使用DAGE 4000Plus(制品名,诺信株式会社(ノードソン(株))制),测定室温(25℃)条件下的剪切强度。
[耐冷热冲击性]
使用铜膏将在2mm×2mm的接合面设置了金蒸镀层的硅芯片,安装到铜框架和PPF上,在氮(3%氢)环境下,在200℃条件下固化60分钟。将其使用京瓷株式会社制的环氧基密封材料(商品名:KE-G3000D)在下述条件下成型的封装,在85℃、相对湿度85%条件下进行168小时吸湿处理后,进行IR回流焊接处理(260℃,10秒钟)和冷热循环处理(将从-55℃升温至150℃再冷却至-55℃的操作记作1次循环,进行1000次该循环),并在各处理后,通过使用超音波显微镜观察各封装的内部裂纹的产生数量。
需要说明的是,表2表示为5个样品中产生裂纹的样品数。
(成型条件)
封装:80pQFP(14mm×20mm×2mm厚度)。
芯片:背面镀金硅芯片。
引线框:PPF和铜。
密封材料的成型:175℃、2分钟。
后期模制固化:175℃、8小时。
[表2]
由以上结果可知,使用了被选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物包覆的本实施方式的铜粒子的铜膏,在从室温加热的过程中具有还原氧化铜的能力,因此,在涂膜状态和接合状态下均可获得高烧结性。
另外,可知包含本实施方式的铜粒子的铜膏,电路形成性优异、且可获得高接合可靠性。因此,通过使用该铜膏,能够获得可靠性优异的半导体装置和电气/电子设备。
Claims (6)
1.一种铜粒子,其中,
其被选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物包覆。
2.权利要求1所述的铜粒子的制造方法,其中,
使用(B)选自肼基乙醇和肼基乙醇盐中的至少一种含氮化合物,对(A)铜化合物进行还原。
3.如权利要求2所述的铜粒子的制造方法,其中,
其进一步包含(C)一水合肼。
4.一种铜膏,其中,
其包含权利要求1所述的铜粒子。
5.一种半导体装置,其中,
其是使用权利要求4所述的铜膏进行接合而成。
6.一种电气/电子部件,其中,
其是使用权利要求4所述的铜膏进行接合而成。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2018241510A JP2020100888A (ja) | 2018-12-25 | 2018-12-25 | 銅粒子、銅粒子の製造方法、銅ペースト及び半導体装置並びに電気・電子部品 |
JP2018-241510 | 2018-12-25 | ||
PCT/JP2019/047183 WO2020137377A1 (ja) | 2018-12-25 | 2019-12-03 | 銅粒子、銅粒子の製造方法、銅ペースト及び半導体装置並びに電気・電子部品 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN113165069A true CN113165069A (zh) | 2021-07-23 |
CN113165069B CN113165069B (zh) | 2023-12-15 |
Family
ID=71127080
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201980079631.8A Active CN113165069B (zh) | 2018-12-25 | 2019-12-03 | 铜粒子、铜粒子的制造方法、铜膏和半导体装置以及电气/电子部件 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220037049A1 (zh) |
EP (1) | EP3903966A4 (zh) |
JP (1) | JP2020100888A (zh) |
CN (1) | CN113165069B (zh) |
WO (1) | WO2020137377A1 (zh) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP4061559A1 (en) * | 2019-11-21 | 2022-09-28 | Universiteit Gent | A method to form copper nanoparticles |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080178761A1 (en) * | 2007-01-26 | 2008-07-31 | Konica Minolta Holdings, Inc. | Method of forming metal pattern, and metal salt mixture |
CN102344718A (zh) * | 2010-07-30 | 2012-02-08 | 富士胶片株式会社 | 墨水组合物,墨水组和图像形成方法 |
WO2014119791A1 (ja) * | 2013-02-04 | 2014-08-07 | 国立大学法人山形大学 | 新規被覆銅微粒子及びその製造方法 |
CN106715009A (zh) * | 2014-08-28 | 2017-05-24 | 石原产业株式会社 | 金属质铜粒子及其制备方法 |
CN107249788A (zh) * | 2015-02-27 | 2017-10-13 | 日立化成株式会社 | 含铜粒子、导体形成组合物、导体的制造方法、导体以及装置 |
JP2017206755A (ja) * | 2016-05-20 | 2017-11-24 | 京セラ株式会社 | 銅微粒子の製造方法、銅微粒子、ペースト組成物、半導体装置及び電気・電子部品 |
CN111344815A (zh) * | 2017-11-13 | 2020-06-26 | 京瓷株式会社 | 膏组合物、半导体装置以及电气/电子部件 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2009149918A (ja) * | 2007-12-18 | 2009-07-09 | Toray Ind Inc | 銅微粒子の製造方法および銅微粒子 |
JP5994811B2 (ja) * | 2014-04-28 | 2016-09-21 | 大日本印刷株式会社 | 銅ナノ粒子分散体、及び導電性基板の製造方法 |
JP2016145299A (ja) * | 2015-02-09 | 2016-08-12 | 日立化成株式会社 | 導電材料及びそれを用いた導電体 |
-
2018
- 2018-12-25 JP JP2018241510A patent/JP2020100888A/ja active Pending
-
2019
- 2019-12-03 WO PCT/JP2019/047183 patent/WO2020137377A1/ja unknown
- 2019-12-03 US US17/414,164 patent/US20220037049A1/en not_active Abandoned
- 2019-12-03 EP EP19904023.9A patent/EP3903966A4/en active Pending
- 2019-12-03 CN CN201980079631.8A patent/CN113165069B/zh active Active
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20080178761A1 (en) * | 2007-01-26 | 2008-07-31 | Konica Minolta Holdings, Inc. | Method of forming metal pattern, and metal salt mixture |
CN102344718A (zh) * | 2010-07-30 | 2012-02-08 | 富士胶片株式会社 | 墨水组合物,墨水组和图像形成方法 |
WO2014119791A1 (ja) * | 2013-02-04 | 2014-08-07 | 国立大学法人山形大学 | 新規被覆銅微粒子及びその製造方法 |
CN106715009A (zh) * | 2014-08-28 | 2017-05-24 | 石原产业株式会社 | 金属质铜粒子及其制备方法 |
CN107249788A (zh) * | 2015-02-27 | 2017-10-13 | 日立化成株式会社 | 含铜粒子、导体形成组合物、导体的制造方法、导体以及装置 |
JP2017206755A (ja) * | 2016-05-20 | 2017-11-24 | 京セラ株式会社 | 銅微粒子の製造方法、銅微粒子、ペースト組成物、半導体装置及び電気・電子部品 |
CN111344815A (zh) * | 2017-11-13 | 2020-06-26 | 京瓷株式会社 | 膏组合物、半导体装置以及电气/电子部件 |
Also Published As
Publication number | Publication date |
---|---|
US20220037049A1 (en) | 2022-02-03 |
EP3903966A4 (en) | 2022-05-04 |
WO2020137377A1 (ja) | 2020-07-02 |
CN113165069B (zh) | 2023-12-15 |
EP3903966A1 (en) | 2021-11-03 |
JP2020100888A (ja) | 2020-07-02 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TWI693266B (zh) | 糊料組合物、半導體裝置及電氣‧電子零件 | |
JP7100651B2 (ja) | ペースト組成物、半導体装置及び電気・電子部品 | |
JP2023106423A (ja) | 銀粒子、銀粒子の製造方法、ペースト組成物及び半導体装置並びに電気・電子部品 | |
CN113165069B (zh) | 铜粒子、铜粒子的制造方法、铜膏和半导体装置以及电气/电子部件 | |
WO2020044983A1 (ja) | 銅粒子の製造方法、接合用ペーストおよび半導体装置並びに電気・電子部品 | |
JP7129043B2 (ja) | 接合用銅粒子の製造方法、接合用ペーストおよび半導体装置並びに電気・電子部品 | |
WO2020105497A1 (ja) | 接合用銅粒子の製造方法、接合用ペースト及び半導体装置並びに電気・電子部品 | |
JP7410742B2 (ja) | 銅粒子の製造方法、銅ペースト及び半導体装置 | |
TWI699412B (zh) | 糊料組合物、半導體裝置及電氣‧電子零件 | |
JP7320068B2 (ja) | 銀粒子の製造方法、熱硬化性樹脂組成物、半導体装置及び電気・電子部品 | |
JP2021134362A (ja) | 被覆銅粒子、銅ペースト及び半導体装置 | |
WO2022196620A1 (ja) | ペースト組成物、半導体装置、電気部品及び電子部品 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |