CN1131546C - High-energy body supplying device, method of forming crystalline film, and method of producing thin-film electronic appliance - Google Patents

Abstract

The invention discloses a high-energy body supplying device for stably producing a high-quality melt crystallized film and a method of forming a crystalline film. Melt crystallization does not contaminate the high-energy body supplying device and controls reconstruction of the surface of the crystallized film. In addition, the efficiency of utilizing the high-energy body is improved by reusing a reflected energy body.

Description

The formation method of crystallinity film

Technical field

The present invention relates to the laser irradiation device be representative high-energy body supplying device, use this device the crystallinity film the formation method and use the manufacture method of the thin film electronic device of the crystallinity film obtain like this.

Background technology

Along with the big pictureization and the high definitionization of liquid crystal display (LCD), its type of drive develops to the active matrix mode from simple matrix-style, so that can show bulky information.The active matrix mode makes the LCD have above the hundreds of thousands pixel become possibility, has the switch element of thin-film transistor (TFT) etc. in each pixel.As the substrate of various liquid crystal displays, use can realize transparent insulation substrate such as vitreous silica plate that transmission-type shows or glass.As the active layer of these TFT, generally use amorphous silicon (a-Si) or polysilicon semiconductor films such as (poly-Si).Not only wanting to form the pixel switch element, and when wanting to be formed up to integrated till the drive circuit with TFT, the use of the polysilicon that operating rate is fast is absolutely necessary with TFT.During as active layer, using the vitreous silica plate polysilicon film, make TFT with the operation maximum temperature above 1000 ℃ the manufacture method that is referred to as high-temperature technology usually as substrate.At this moment, the mobility value of polysilicon film is approximately from 10cm ²V ^-1S ^-1To 100cm ²V ^-1S ^-1On the other hand and since with amorphous silicon film during as active layer the operation maximum temperature be low to moderate about 400 ℃, therefore use common glass.The mobility value of amorphous silicon is approximately from 0.1cm ²V ^-1S ^-1To 1cm ²V ^-1S ^-1

To the maximization of the display frame of LCD and low price development the time, require to use cheap simple glass as insulated substrate.But as previously discussed, amorphous silicon film is compared with polysilicon film and is had that electrical characteristics are poor significantly, operating rate waits problem slowly.In contrast, because the multi-crystal TFT made from high-temperature technology uses the vitreous silica plate, so have maximization or the comparatively difficult problem of low price of LCD.Because these situations, press for now and a kind ofly on common glass substrate, make with the technology of semiconductor films such as polysilicon film as the thin-film semiconductor device of active layer.Yet,, produce following restriction: promptly in order to avoid substrate deformation should make the operation maximum temperature be lower than 400 ℃ in order to use the good large-scale common glass substrates of the property produced in batches.This transistor is referred to as low temperature process poly-Si TFT now, it is developed.As a result, the most important technical task of low temperature process poly-Si TFT is how to be lower than the good crystallinity film of formation under about 400 ℃ treatment temperature.In other words, be that the device that how will form good crystallinity film makes good device.The solution of this problem can not only be made good TFT and be used the LCD of this TFT, and the raising that provides a kind of performance that can make all electronic installations such as the solar cell of using the crystallinity film, semiconductor element circuit to obtain leaping, the technology that price is further reduced.

As forming the crystallinity film at low temperatures, and use this crystallinity film to make first prior art of thin film electronic device, can enumerate SID (Society for Information Display) ' 93 digest P.387 (1993).Wherein form polysilicon film as the crystallinity film, make TFT as thin film electronic device.At first use low-pressure chemical vapor phase deposition method (LPCVD method) with single silane (SiH ₄) as unstrpped gas, the a-Si film of deposit 50nm under 550 ℃ deposition temperature carries out laser radiation to this a-Si film and forms the crystallinity film.Not record in this digest, laser radiation is carried out with the laser irradiation device shown in Fig. 1 101.Laser irradiation device is made of laser emitting source 102 and laser radiation chamber, settles its surface to have the substrate of the irradiated body 103 of a-Si film etc. on the objective table 105 of the indoor arrangement of laser radiation.On the part of laser radiation chamber, be provided with the laser entrance window made from quartz glass etc. in position over against objective table, make laser 107 by these entrance window 106 incidents.The distance of laser entrance window and substrate 104 generally is about 1 centimetre.Laser radiation towards irradiated body makes the objective table temperature be raised to about 400 ℃ from room temperature, and this laser radiation is carried out in atmosphere and even under the vacuum.

Obtain this crystallinity film, promptly behind the poly-Si film, utilizing this film to make thin film electronic device (being TFT) here.Specifically, after the poly-Si film is processed as desirable shape, with the oxide-film of deposits such as PECVD method as the function of gate insulating film.On gate insulating film,, be that mask injects alms giver or acceptor impurity on polysilicon film, form transistorized source in autoregistration (self align) mode and leak with the gate electrode with after tantalum (Ta) the formation gate electrode.This impurity injects and uses the non-divergence type injection device of quality that is referred to as the ion doping method, uses the hydrogen phosphide (PH that has diluted with hydrogen ₃) or diborane (B ₂H ₆) as unstrpped gas.The activationary temperature that injects ion is 300 ℃.Thereafter the deposit interlayer dielectric is made electrode or wiring with indium tin oxide (ITO) or aluminium (Al), thereby is finished thin-film semiconductor device.

As second prior art that obtains the crystallinity semiconductor film at low temperatures, can enumerate the spy and open flat 7-99321 communique.Even in second prior art, after forming the a-Si film, also obtain the crystallinity film by laser radiation.Carry out laser radiation this moment in a vacuum and even under the inert gas atmosphere.In fact be to record and narrate like this [0009] section of this communique: " superficial layer at least of the semiconductive thin film that has formed on to substrate under reduced pressure or in the inert gas atmosphere carry out melting recrystallizationization; remain in decompression down or under the original state in the inert gas atmosphere at the substrate (1) of the semiconductive thin film that will form melting recrystallizationization, transfer to the operation of formation dielectric film on the semiconductive thin film of melting recrystallizationization." use the polysilicon film that in second prior art, obtains by this way, make TFT with identical with first prior art basically manufacture method.As a result, in above-mentioned any prior art, all use the laser irradiation device shown in Fig. 2, in a vacuum and even in the atmosphere or under the inert gas atmosphere silicon fiml is carried out laser radiation, obtain the crystallinity film.

But in above-mentioned prior art, see following problem.

Problem 1) irradiation in atmosphere makes the impurity of oxygen, nitrogen or dust etc. enter into the crystallinity film.Be under the situation of semiconductor or metal etc. particularly at the crystallinity film, oxygen and dust sneak into the remarkable reduction that causes property of thin film.

Problem 2) in the crystallization under the inert gas atmosphere, making gas with the most use is nitrogen.But the reactivity of metals such as semiconductor such as nitrogen and silicon or tantalum is stronger, therefore can not obtain high crystallinity semiconductor film of purity or crystallinity metal film.

Problem 3) about in a vacuum irradiation, is necessary to be provided with the high laser radiation chamber of sealing, also will on laser irradiation device, adds large-scale vacuum pumping hardwares such as turbomolecular pump.This can cause using the price of the thin film electronic device of crystallinity film to rise, and productivity ratio is descended.

Problem 4) in fusion-crystallizationization, the formation element of irradiated body must splash from the laser irradiated body that is in molten condition or be evaporated.This phenomenon is particularly very remarkable during in a vacuum laser radiation.This is because the fusion in the vacuum and the formation of evaporating film are equal.As a result, on the laser entrance window of laser irradiation device, form the film of irradiated body.In Fig. 1, described to be called the situation of molecule 1 08 of splashing.The evaporation of irradiated body 103 and form the decay of the energy that means that irradiated body is accepted in laser radiation each time towards the film of this laser entrance window.That is, can not obtain having the crystallized film of good characteristic in the prior art, its film character also has very big change in addition.

Problem 5) when high energy bodies such as irradiated body being supplied with laser radiation carried out fusion-crystallization, taking it by and large, the quality of the high more resulting crystallized film of energize was good more.But in the irradiation in a vacuum, along with the rising of energize, problem 4) become more serious.Therefore the irradiation in the vacuum can not improve energy in fact, so can not improve the quality of crystallinity film.

Problem 6) in a vacuum or in the laser radiation under the inert atmosphere, when finishing the fusion-crystallization that produces by irradiation (when the laser irradiated body is changed to the crystalline solid state from solution state), recombinated in the surface, so that surface energy becomes minimum, and stay many chemically active dangling bonds that have from the teeth outwards.The structure on reorganization surface with these dangling bonds is different fully with the structure of crystallization inside, so its energy band diagram also differs widely with the energy band diagram of crystallization inside.Semiconductive thin film, metallic film is utilizing its surface in a lot of electronic installations.For example, in the field-effect transistor (FET) that uses semiconductive thin film, form inversion layer, control the transport process in its inner electronics or hole at semiconductor surface.In addition, electric current also is a Surface runoff at metallic film in metal line.In addition, even in the device (for example mirror or metallic catalyst) of the optical characteristics of utilizing film or chemical property, what determine its characteristic also is the surface.If the reorganization that has dangling bonds owing to this reorganization surface makes itself and the inner words that very big difference is arranged, then its surface nature also has very big variation (normally degenerating), for example, in the FET that uses semiconductive thin film, difference according to surface state, mobility in the inversion layer be semiconductor inside mobility tens percent to a few percent, so its characteristic degenerates.Even for metallic film, also can see same situation (for example variation of the conductivity of metallic film).Therefore, in order to obtain good crystallinity film, surface control is to play important effect in this wise.Yet, in existing crystallization method, can not realize this control fully, so can not obtain good crystallinity film.Have, the state on reorganization surface is according to the difference of the situation of fusion-crystallizationization and difference, so the membrane property of crystallinity film also has very big change again.

Therefore, the present invention is conceived to solve above-mentioned variety of issue, its purpose is to provide a kind of and is the high-energy body supplying device of representative with the laser irradiation device and uses this device to form the method for good crystallinity film under lower temperature, and a kind of manufacture method of utilizing the thin film electronic device of the crystallinity film that obtains like this is provided.

Summary of the invention

(the atmosphere control during the 1-1. fusion-crystallization)

Among the present invention, in first operation on various substrates metallic film such as semiconductor such as deposit silicon or tantalum, and after then in second operation, making the surface layer part at least ground fusion of these films, form various crystallinity films by making its crystallization (following in the application's book, abbreviate fusion-crystallizationization as) through the cooling curing process.About it is generally acknowledged applicable to substrate of the present invention, will in (2-1) chapter, be described in detail, about film, will in (2-2) chapter, discuss.So-called crystallinity film means that this film is in single crystals state or many crystalline states, or the mixed crystal matter state that mixes of crystalline and noncrystalline.Fusion-crystallizationization is by realizing high energy bodies such as membrane supplying laser.As the form of high energy body, be the electromagnetic wave of representative except light or X line, with the γ line, can also be proton beam or charged particle streams such as electron beam, alpha ray, with the neutral basic particle beams of neutron beam or neutral meson Shu Wei representative.The elementary particle bundle has can be by strong interaction or weak interaction simply to the high-octane advantage of membrane supplying.In addition, if comprise the neutral basic particle flux of electromagnetic wave (photon), even then can not provide unwanted electric charge to film under the lower situation of the conductivity of film, therefore film can not be subjected to electric damage yet in the supply of high energy body yet.This point film be intrinsic-OR near the situation of the semiconductor film of intrinsic under particular importance.This is because of the lower cause of conductivity in these films.Charged particle stream has following advantage: can easily form the plasma of atom etc., and the control of the direction of charged particle stream is very simple.If consider the easy degree aspect the processing of formation or direction control etc., perhaps for the fail safe of organism, optimal high energy body is that wavelength is from about 10 nanometers to about 10 microns electromagnetic wave, i.e. light.Light can be categorized into laser and non-laser, and wherein any all can be used as the high energy body and use.

The fusion-crystallizationization of carrying out in second operation is containing under the atmosphere of following gas carries out: hydrogen molecule (H ₂) with the halide of the hydrogen of the mist of inert gas or hydrofluoric acid (HF) or hydrochloric acid (HCl) etc. and the mist or the nitric acid (HNO of inert gas ₃) or sulfuric acid (H ₂SO ₄) acid that waits and the mist of inert gas or with silane (SiH ₄, Si ₂H ₆) constitute element as the gas of hydride and the mist of inert gas etc. or hydrogen for the film that will contain semiconductor etc. of representative.Inert gas is except nitrogen molecular (N ₂) in addition, can use following gas: the rare gas element of helium (He) or neon (Ne), argon (Ar), krypton (Kr), xenon (Xe) etc. or be the chemically inert all gas or the mist of these gas and above-mentioned various inert gases for the film that carries out fusion-crystallizationization.

If under the atmosphere that contains inert gas and hydrogen, carry out the fusion-crystallizationization of film, then compare the impurity such as dust that can reduce oxygen significantly or swim in atmosphere and enter into the phenomenon of film, so have the advantage of the purity that can improve crystallized film with the crystallization in atmosphere.As everyone knows, semiconductor might as well, metal might as well, the impurity in the film is few more, can improve the character of film more, for example mobility etc.In addition, in semiconductor, add approximately less than 1 * 10 consciously ¹⁸Cm ^-3A spot of impurity, control its physical property.From this point, it also is important obtaining highly purified semiconductor film.Compare with the crystallization under solid state, impurity is even more serious from the phenomenon that atmosphere enters in the film in fusion-crystallizationization.This is because the treatment temperature of liquid condition is more much higher than solid state growth, so the diffusion of impurity or carry out very soon with the chemical reaction of film constitute.Atmosphere control when therefore, the control of the atmosphere during fusion-crystallization is with solid state growth is compared also has prior meaning.

It is important aspect following that the atmosphere of carrying out fusion-crystallizationization contains the hydrogen this point.When membrane supplying high energy body was made it after the fusion once to solidify as crystalline solid, the atom adjacent in the inside of film combined with regular order, the crystal structure of formation rule.In contrast, do not exist in the surface first half should in conjunction with atom.Thereby, as carry out fusion-crystallizationization in a vacuum or in the inert atmosphere, then be combined with each other at the adjacent dangling bonds of film surface, so that surface energy becomes minimum, the result recombinates to the surface.In general the structure on reorganization surface differs widely with the internal structure of crystal, and its band structure also changes.And on the reorganization surface, there is very big stress.This stress influence reaches several cycles of the crystal that is positioned at lower floor, and the lattice at this place is deformed.The variation of band structure makes the change in concentration in electronics or hole, and the distortion of lattice reduces the mobility in electronics or hole.In addition, the dangling bonds that must occur omitting the combination between surface atom.These dangling bonds have chemism, and when the crystallization that finishes film was fetched into film in the atmosphere, these dangling bonds and airborne water or oxygen reacted, or absorption dust.In addition, the existence of dangling bonds itself forms interface energy level, or becomes the scattering center in electronics or hole, and its mobility is descended.Therefore, various adverse effects are brought to property of thin film in the reorganization surface.

In the formation method of the crystallinity film of the application's invention, containing the fusion-crystallizationization of carrying out film under the atmosphere of hydrogen.Therefore, the various hydrogen atoms that comprise in atmosphere of the dangling bonds of the atom that occurs on the surface in the cooling curing process are terminal (being designated hereinafter simply as the hydrogen terminalization).So, the reorganization on surface can be avoided certainly, the sum of dangling bonds can be reduced simultaneously significantly.In other words, according to the application's invention, the purity of resulting crystallinity film is very high, and surface texture is in close proximity to internal crystal structure.Therefore, the metal surface directly reflect metal itself intrinsic character, semiconductor surface also directly demonstrates semiconductor property.For example, if make the FET (being so-called TFT) that has used crystalline semiconductor film according to the application's invention, then since result from reorganization surface mobility decline seldom, the mobility ratio on historical facts or anecdotes border is much bigger with the actual migration rate of the TFT that prior art is made, the value of this mobility between substrate or batch with criticize between also be stable.

As carry out fusion-crystallizationization under the mixed-gas atmosphere of hydrogen molecule and inert gas, then impurity does not enter in so-called metal or the semi-conductive crystallized film, can obtain the change of hydrogen terminal highly purified crystallized film.As carrying out with silicon under the mixed-gas atmosphere of the halide of hydrogen and inert gas is the fusion-crystallizationization of the semiconductor film of representative, the fact that relatively is easy to generate based on the reaction of halide and semiconductor film then can be carried out the hydrogen terminalization of crystallization semiconductor film reliably.Equally, even in the mist of acid and inert gas, also than being easier to carry out the hydrogen terminalization.It is generally acknowledged that this is effective especially for metallic film.Constitute that to carry out fusion-crystallizationization under the atmosphere of element as the mist of the gas of hydride and inert gas be desirable containing film.This be because, can carry out the hydrogen terminalization reliably, also can guarantee high-purity.Will point out especially, be under the situation of silicon at film, and best hydride is silane.Because the reaction of silane is very fast, thus can be reliably with the surface on the dangling bonds that occur react.This is because the result of reaction is, even silane is captured by silicon thin film, also makes silicon atom layer increase one deck, as not producing the reduction of purity, then also do not produce the distortion of lattice.

For the terminalization of carrying out reliably when the fusion-crystallization being produced by hydrogen, the hydrogen dividing potential drop in the atmosphere or the dividing potential drop of hydride are as just enough greater than about 10mTorr.This point is based on following reason.The quality that makes a gas molecule is that m (kg), dividing potential drop are that P (Pa), temperature are that T (K), concentration are C (m ^-3), average speed is v (ms ^-1), the flow velocity of its gas then, density F (m ^-2S ^-1) be following (1) formula. $F=\frac{1}{6}\mathrm{cv}=\frac{1}{2}\frac{1}{\sqrt{3\mathrm{kTm}}}......\left(1\right)$

Wherein k is a Boltzmann constant.Melting time during as crystallization is τ (s), and the dangling bonds density at film surface place is Nss (m ^-2), then the gas number (flow velocity density * melting time) that collides with film surface in the melting time is the necessary condition that makes all dangling bonds terminalizations greater than dangling bonds density this point.That is following (2) formula.

τF＞Nss …(2)

By (1) and (2) formula, derive following (3) formula for pressure. $P>\frac{2\sqrt{3\mathrm{kTm}}}{\mathrm{\τ}}{N}_{\mathrm{SS}}......\left(3\right)$

Satisfy under the situation of (3) formula of being somebody's turn to do in the dividing potential drop of hydrogen molecule or the dividing potential drop of hydride, after fusion-crystallizationization, can obtain high-quality surface.The shortest time that can carry out fusion-crystallizationization is about 10ns (τ=1 * 10 ^-8S), the maximal density of the dangling bonds of considering from the general knowledge aspect is about 1 * 10 ^-12Cm ^-2(Nss=1 * 10 ^-16m ^-2).Thereby the pressure height as the voltage ratio of hydrogen molecule or hydride uses these values to calculate then all satisfies (3) formula in all fusion-crystallizationizations of all films.As described below for the minimum dividing potential drop that each hydride calculates.

Hydrogen molecule (H ₂) PH ₂＞1mTorr

Hydrofluoric acid (HF) PHF＞3mTorr

Hydrochloric acid (HCl) PHCl＞4mTorr

Silane (SiH ₄) PSiH ₄＞4mTorr

Nitric acid (HNO ₃) PHNO ₃＞6mTorr

Sulfuric acid (H ₂SO ₄) PH ₂SO ₄＞7mTorr

Shown in (3) formula, the minimum necessary dividing potential drop of hydride improves with the raising of its molecular weight.But, from above-mentioned result as can be known, as being higher than about 10mTorr, then general material all satisfies this condition.The least concentration of hydrogen gas explosion is about 4%, and Dui Ying hydrogen dividing potential drop is 30Torr therewith.Thereby, from secure context, we can say that the maximum of hydrogen dividing potential drop is about 30Torr.The least concentration of silane blast is about 1%, and Dui Ying silane partial pressure is 7.6Torr therewith.Other hydride is from secure context, preferably also be lower than under about 1% the concentration, or the branch that is lower than about 7.6Torr depressed use.As get allowance for secure context, we can say that then maximum dividing potential drop is about 5Torr.As a result, for all hydride, as the hydride dividing potential drop when making fusion-crystallization is greater than 10mTorr, and gets less than 5Torr, then can realize the application's invention safely.

Discussed the dividing potential drop of the hydride in second operation so far, but total pressure atmospheric pressure or more than the atmospheric pressure preferably.Certainly, even (in the vacuum) carry out fusion-crystallizationization under satisfying the low pressure of above-mentioned partial pressure conditions, also can obtain above-mentioned effect.But if make the device of vacuum system, it is high again then to install price, and operation is complicated again.As in atmosphere, carrying out, to install, treatment process all becomes simple, also can boost productivity significantly.Moreover, by at atmospheric pressure or be higher than and carry out second operation under the atmospheric pressure, compare with the processing under the vacuum, film in the time of can reducing fusion-crystallization significantly constitutes the evaporation of element or splashes and evaporate or element adhering in device of splashing out (following this is called the inhibition effect of splashing).This be because, live fusion face by the gas compacting that forms ambiance, suppress evaporation pro rata with pressure or splash.Because the size of its effect is only determined by the height of total pressure, so from the principle, even do not use inert gas only with hydrogen molecule or hydride, as its pressure is atmospheric pressure, then with in the atmospheric pressure use the situation of mist of hydride and inert gas identical, also can obtain the inhibition effect of splashing.But these hydride of operation are abnormally dangerous in atmospheric pressure.Owing to this reason (compensation of fail safe), wish to use the mist of hydrogen or hydride and inert gas.Use the most extensively as the nitrogen of inert gas, have advantages of being cheap.As metal or semiconductor are supplied with high-energy and made its liquid phase state that becomes high temperature, then all react with nitrogen.In contrast, rare gas has following advantage: no matter to what thin-film material, no matter under what kind of high temperature, will never react.Film constituent material as silicon or aluminium, its atomic weight is bigger.Thereby even in rare gas, the inhibition effect of splashing of argon or krypton, the sort of so-called heavy element of xenon is better.The amount of krypton, xenon is few, the price height.Therefore, cheap and practicality and the effective inert gas of inhibition that splashes is an argon.

(shape of 1-2. high-energy body supplying device and the fusion-crystallizationization that obtains by this device)

In second operation, object materials such as the semiconductive thin film that forms or metallic film are supplied with the high energy body on substrate in first operation, at least its superficial layer carry out fusion-crystallizationization, in order stably to carry out this second operation and to obtain high-quality crystalline solid, be necessary to make the high-energy body supplying device that adapts therewith.In this chapter, be example with light (laser), use Fig. 2 to describe with regard to the shape of high-energy body supplying device as the high energy body.Also discuss simultaneously with in first operation on substrate established film as the object material of supplying with the high energy body it is carried out the method that second operation forms the crystallinity film.

The high-energy body supplying device of the application's invention (Fig. 2) constitutes by the generation source (laser emitting source) 202 that generates high energy bodies 207 such as laser with to the supply chamber 201 that object material (film forming substrate) is supplied with the high energy body that is generated at least.Supply chamber has at the objective table of the function of its indoor object placement material (arrangement platform) 205.For example settle film forming substrate on the objective table in supply chamber.Objective table possesses transportable function, so that can supply with high energy body 207 on the desirable position of object material.On the part of the wall 209 of supply chamber, be provided with the high energy body is imported to importing window 206 in the supply chamber, import window and constitute by the absorption of high energy body few material and the almost intransitable material of gas molecule.In other words, importing window is transparent for the high energy body, is nontransparent for gas molecule.As an example, be the light time at the high energy body, import window and constitute by clear glasses such as quartz.

In the present invention, when supplying with the high energy body, be arranged on the position that the constitute (being silicon atom in the example of silicon thin film) of object material almost can not adhere to importing window to object material (for example silicon thin film).For example shown in figure 2 in the high-energy body supplying device, the part of the wall of supply chamber is stretched out on the direction of leaving the object material, is provided with the importing window at the front end of this extension 210.As a result, import the distance L 1 of window and object material greater than the minimum distance L2 of wall 209 with the object material.Under the state of distance that imports window and film greater than the minimum distance of wall and film, even promptly be arranged on membrane supplying high energy body will importing window, under the also almost inadhering locational state of the constitute of film, object materials such as film are supplied with high energy body 207.In Fig. 2, described the high energy body and supplied with the result of (laser radiation), as the splash scope of the constitute that splashes out from evaporation of object material or the element that splashes out.In the application's invention, owing to compare with the scope of splashing of object material, the distance that imports between window and the object material is enough big, so even repeatedly carry out being supplied with and the fusion-crystallizationization of generation by the high energy body, the formation thing of object material also is not attached to and imports on the window.As described above, importing window must be transparent for the high energy body.In contrast, be nontransparent because object is verified in the high energy body, so the high energy body is transformed to heat.Import window if the object material is attached to, then import window become certainly nontransparent, so can not finish the function that it should be finished.The present invention has got rid of this irrational situation, has therefore realized all good high-energy body supplying device aspect stability and the property produced in batches.

When the semiconductive thin film irradiating laser is obtained crystallized film, the control particular importance of the scope of splashing.In general, in semiconductive thin film, exist energize high more, just can obtain the trend of the crystallized film of high-quality more.But energize surpasses higher limit, and then semiconductor element splashes out explosively, after energy is supplied with end, and semiconductive thin film or disappearance, or attenuation significantly.It is generally acknowledged that this is that to result from semiconductor film be the crystal of covalent bond, thus harder, with and thermal conductivity littler than metal.Moreover, also following situation is considered as a reason: because semiconductive thin film comes deposit with CVD (Chemical Vapor Deposition) method (CVD method) in first operation, so on substrate or the substrate adhesiveness of established base protective film and semiconductor film a little less than.In any case, owing to there is this higher limit,, and be set in higher value as far as possible so in crystallization, laser energy is no more than this higher limit.But, must have change aspect the energy of laser, in addition, because fulminant what splash is a kind of statistic processes, so, just can not ignore splash phenomena as if the crystallinity semiconductor film of wanting to obtain high-quality.Can draw following conclusion from these situations: the application's control the splash high-energy body supplying device of scope and the formation method of crystallized film, for being particularly suitable at the crystallinity semiconductor film that stably forms high-quality with high productivity ratio on the substrate or on the base protective film.

For the miniaturization of high-energy body supplying device itself with easily replace ambiance in the supply chamber, should save unwanted space in the supply chamber as far as possible.If consider the taking-up of object material and put into or the vibration of objective table work, the minimum distance of wall and object material is about 2mm to 40mm.On the other hand, the scope of splashing of object material changes according to the pressure in the supply chamber.For example, as about 10 ^-5In the vacuum of Torr, then the scope of splashing reaches more than the 10cm, but as in atmosphere, then is about below the 10mm.Thereby as above a chapter is described, and is as carry out fusion-crystallizationization under the pressure more than the atmospheric pressure, then just enough greater than 20mm with the distance of dwindling material as importing window.As under the pressure below about 10mTorr, supplying with the high energy body, wish that then this distance is at least 50mm.More than about 100mm, be desirable.From the above as can be known, in order to adapt to the various pressure of supply chamber, wish that this distance is about more than the 50mm.Do not think that this distance is the special upper limit, but as capping obstinately, then be about 1000mm.Why get like this be because, if this distance is oversize, then the volume of supply chamber increases, needed time increase aspect the ambiance displacement, in addition, it is big that device itself also becomes.

(air-flow and relevant therewith fusion-crystallizationization in the 1-3. high-energy body supplying device)

The optimal shape that should take with regard to high-energy body supplying device in a last chapter is narrated.Then in this chapter, use Fig. 3 to narrate with regard to the air-flow in the supply chamber of high-energy body supplying device.

The structure of the supply chamber of the high-energy body supplying device that Fig. 3 (A) has illustrated a last chapter from the explanation of the viewpoint of air-flow, Fig. 3 (B) expression are carried out the middle gas stream of object material crystallization to object material (on substrate established film etc.) supply high energy body at least.The high-energy body supplying device of the application's invention has to make and produces the pressure regulation device of desirable pressure distribution in the supply chamber or make the gas stream adjusting device that produces desirable gas stream in the supply chamber.Specifically, pressure regulation device or gas stream adjusting device to major general's steam vent 311 and gas ostium 312 as its main composition parts.Steam vent flows out the exhaust in the supply chamber, and it is arranged on the part of supply chamber wall 309.A plurality of (being 6 in Fig. 3 (A)) gas stream hand-hole flows in the supply chamber all gases that is described in detail in (1-1) chapter.By suitably adjusting from the gas flow of each gas stream hand-hole inflow and the pumping speed the steam vent total pressure in pressure regulation device or the gas stream adjusting device control supply chamber or mobile.Moreover, pressure regulation device or gas stream adjusting device can make near the pressure the importing window 306 be higher than near the pressure of object material, maybe can make near the pressure of object material be higher than near the pressure of steam vent.So, in second operation, under near near the pressure the importing window is higher than the object material the pressure status, or be higher than near the object material (film) pressure and near the pressure the object material (film) and be higher than under near the steam vent the pressure status, importing near the window pressure being placed in object materials such as the film supply high energy body 307 on the objective table 305.

Secondly, use Fig. 3 (B) that the gas flow of this moment is described.At first, with the high energy body after import window 306 and import to supply chamber 301, in supply chamber, will answer irradiation object material 303 and the path setting of process is irradiation path 315.Make a part that arrives the high energy body of object material through the irradiation path enter the object material, a part is from the scattering of object material in addition.High energy body with this scattering is called reflection high energy body 313 in this application.Secondly, the path setting with reflection high energy body process in supply chamber is a reflex path 314.As previously discussed, in supply chamber, there be pressure distribution or the gas stream of having adjusted by pressure regulation device or gas stream adjusting device 320.In the supply chamber of the application's high-energy body supplying device, can control this gas stream, make it from import window on identical with the irradiation path substantially direction towards the object material, and can make it to begin towards identical with reflex path substantially direction from the object material.This is because of making the pressure that imports near window 317 be higher than near the pressure of object material 318 and the pressure that near the pressure the object material is higher than near steam vent 319.The result, gas stream from import window on identical with the irradiation path substantially direction towards the object material, and from the object material under the state of substantially identical direction with reflex path, the object material of film etc. is supplied with the high energy body, thereby carry out fusion-crystallizationization.

As above described in the chapter, in metal or semi-conductive fusion-crystallizationization, metal or semi-conductive formation element must evaporate when fusion.In addition, improve, then can become micro powder and splash out as energize.In the high-energy body supplying device of the application's invention, owing to exist from importing the air-flow of window one side,, evaporation element or the micro powder that splashes significantly reduce so arriving the probability of importing window towards the object material.In addition, owing to also exist from the air-flow of object material towards steam vent, this air-flow and reflex path are roughly on identical direction, so evaporate element or the micro powder that splashes is discharged with this air-flow.This fact not only can prevent towards the adhering to or pollute of supply chamber, and micro powder the adhering to again towards the object material of having limited the evaporation element greatly or having splashed.This point particularly on making substrate established film carry out crystallization and utilize this thin film fabrication TFT or have great importance during large scale integrated circuit (LSI).This is because micro powder that adheres to again or the precision that makes microfabrication reduce, or becomes the reason of electrical short.In addition, small powder has chemism, react so be easy to and supply with locular wall etc., and after carrying out such reaction, because the situation of the object material that is attached to film etc. more also can be arranged, so the purity of film has naturally and understandably descended.In the formation method of the high-energy body supplying device of the application's invention and crystallinity film, this evils can be fully removed, the crystallization thing of high-quality can be stably made.

(utilization of 1-4. reflection high energy body)

The formation method of invention high-energy body supplying device that is further improved and the crystallinity film that uses this device that (1-2) Zhang Zhongyi is described in detail is described in this chapter.

Fig. 4 shows the structure of the supply chamber 401 of high-energy body supplying device of the present invention.With (1-2) Zhang Xiangtong, high-energy body supplying device has generation source (omitting) that generates high energy body (light of laser etc.) 407 and the supply chamber of object material 403 (metallic film or semiconductive thin film) being supplied with the high energy body at least in Fig. 4.Supply chamber as the function of this indoor object placement material within it portion have arranging device 405, will be in first operation the object material of film forming substrate etc. be placed on the arranging device.On the part of the wall 409 of supply chamber, be mounted with the high energy body is imported to importing window in the supply chamber, import the record that window 406 and the position relation of object material satisfy (1-2) chapter.Be mounted with the pressure regulation device or the gas stream adjusting device that comprise steam vent 411 and gas ostium 412 in this external supply chamber, therefore pressure distribution or the gas stream that in supply chamber, exists (1-3) Zhang Zhongyi to be described in detail.Much less, the atmosphere in the supply chamber meets the record of (1-1) chapter.In addition, after import window and import to supply chamber, be envisioned for the irradiation path through the path at the high energy body with what shine the object material.

In the high-energy body supplying device of the application's invention, dispose like this and import window or arranging device, make that the direction of normal 416 of object material of film etc. is different with the direction of shining path 415.Thereby, when film is carried out crystallization, under the normal direction of the film state different with the direction of irradiation path to membrane supplying high energy body.Moreover, in the high-energy body supplying device of the application's invention, on the normal direction of the object material of film etc., settle steam vent.By taking such structure, in little supply chamber, can make the distance that imports window and object material become big, can easily obtain structure and the effect recorded and narrated in (1-2) chapter.In addition, owing to be provided with steam vent, therefore can discharge the micro powder that evaporates element or splash effectively at the position of the minimum distance that is equivalent to object material and supply chamber wall.In addition, the ratio that flies out on normal direction owing to the micro powder that evaporates element or splash is high especially, so also can improve discharge efficient from this point, can realize the effect of (1-3) chapter more reliably.

The high-energy body supplying device of the application's invention is except above-mentioned formation, in order to make reflected energy body 413 irradiation object material and have the route change device of reflected energy body once more.Route change device 418 also has position regulator 417, so that the reflected energy body is shone on the desirable position of object materials such as film.After established film is placed in the supply chamber on substrate in first operation, with the primary importance of high energy body irradiate.The part of high energy body intactly enters into film, but another part becomes the reflected energy body after the film reflection.The reflected energy body changes its route by the route change device, and the second place of irradiate carry out fusion-crystallizationization once more.Have the high speed the light that resembles as the high energy body, generally during the primary importance of the initial irradiate of high energy body in, the reflected energy body corresponding with this high energy body begins to shine the second place.Primary importance can be different with the second place, but preferably about equally.This is because as described below, can improve the energy service efficiency, can prolong the melting time.Utilize position regulator to carry out the adjustment of the primary importance and the second place.As the high energy body is light, and then the route change device is made of Optical devices such as mirror or lens, prisms, is charged particle as the high energy body, and then the route change device is made of electromagnetic field generating device.Position regulating function changes the position relation (for example angle of mirror) of Optical devices, or electromagnetic field is carried out inching.

The example of simple device of using up that makes shown in Figure 5 as the high energy body.Reference number 506 expressions import window, 511 expression steam vents, 512 expression gas stream hand-holes, 516 expression normals.Route change device 518 is mirrors at this moment, and the route change device preferably has focusing arrangements such as concave mirror.This is because in general, reverberation has the scattering composition, and focusing arrangement focuses on scattered light, shines effectively again.Behind the object materials 503 such as incident light irradiation film, a part becomes reverberation.After by concave mirror this reverberation being carried out focus reflection, irradiation object material once more.By doing like this, can improve the utilization ratio of high energy body 507 significantly.For example, ultraviolet light or visible light reach more than 70% at the reflectivity on the semiconductive thin film, are more than 90% at the reflectivity on the metallic film.Thereby energy service efficiency in the past is about 10% to 30%.In contrast, in the application's invention, owing to effectively reflected energy body 513 is utilized again, so the energy service efficiency can be multiplied to substantially about 20% to 50%.This situation is effective especially under the irradiation position (primary importance) of the high energy body that the incides the object material at first situation identical substantially with the irradiation position (second place) of reflected energy body.Fig. 6 is an example with the situation that sends pulse laser, and this effect is described.The illuminated point of transverse axis indicated object material begins irradiation in the moment of t=0.The longitudinal axis is the actual energy intensity (arbitrary unit) that enters in the object material and help fusion-crystallizationization of high energy body.Irradiation at the beginning, the energy intensity of high energy body just rises, at t=t ₁Reach maximum.The reflected energy body is accompanied by extremely short time delay and shines the object material according to the distance and the speed of object material and route change device.Be made as t as the moment that will be taken as maximum from the energy density of reflection energy body ₂, then the delay of time is t ₂-t ₁So, the energy density of incident high energy body and the energy density of reflected energy body are overlaped.This is the energy density that in fact helps fusion-crystallizationization among the application, describes as synthetic light in the example of Fig. 6.Therefore, according to the present invention, compared with the past the obtaining substantially of energy service efficiency doubled.

In the application's better high-energy body supplying device, original route change device has adjusts function constantly.This is to make the reflected energy body moment of irradiation object material (is t among Fig. 6 again ₂-t ₁) postpone.(followingly in this application this time delay is called time of delay.) constantly adjusting device 419 for example can constitute by a plurality of reflection units that can reflect the high energy body, a simple example has been described in Fig. 4.Constantly change device is the device of the speed of the device of path of change reflected energy body process or change reflected energy body.The former is to be easily the light time at the high energy body, and the latter is easily when the high energy body is charged particle.The path change of light can be undertaken by the combination of mirror, and the speed change of charged particle can be undertaken by the adjustment of electric field.By suitably adjusting time of delay, can prolong the time of high energy body irradiation object material.Use Fig. 7 that this point is described.The longitudinal axis of Fig. 7 is identical with the longitudinal axis and the transverse axis of Fig. 6 with transverse axis.In Fig. 7, make (t time of delay ₂-t ₁) roughly (the high width of half-peak is used t in Fig. 7 with the transmitting time width of high energy body _aThe high width of half-peak of expression incident light) identical.As a result, the high width of half-peak of synthetic light obtains multiplication substantially and (uses t in Fig. 7 _bExpression).

The increase of the high width of time half-peak of high energy body means the energy supply of stably carrying out towards the object material, can reduce the above-mentioned fulminant generation probability that splashes significantly.For example, go up the excimer laser (abbreviate XeCl laser, wavelength 308nm) of irradiation, the test crystallization as the chlorination xenon (XeCl) of high energy body at the hydrogenated amorphous silicon film (a-Si:H) that forms with plasma-reinforced chemical vapor deposition method (PECVD method).In general, because the hydrogen content of this film is many, the density of film is low, so fusion-crystallizationization is very difficult.In fact the high width of half-peak service time is about the XeCl laser of 50ns, is about 100mJcm in irradiation energy density ^-2When following, amorphous film can not carry out crystallization fully, on the contrary, more than the value, then produces fulminant splashing at this as energy density, and the result can not carry out the crystallization of film in whole energy area.In contrast, the high width of half-peak service time is about the XeCl laser of 100ns, is about 100mJcm in irradiation energy density ^-2When following, amorphous film still can not carry out crystallization, but at about 100mJcm ^-2To about 150mJcm ^-2Between energy density nextly can carry out crystallization well.At 150mJcm ^-2More than situation with previous identical, produce fulminant splashing, but as the high width of time half-peak is further prolonged, the scope that then can carry out the energy density of fusion-crystallizationization correspondingly broadens.Even the energy density of high energy body all is same 125mJcm ^-2, but the effect to the object material is different fully under situation (50ns) that the high width of time half-peak is lacked and situation (100ns) situation of growing.This difference is because the difference of the energy transfer amount of unit interval causes.Elongated as the high width of time half-peak, then the energy of transferring to the object material from the high energy body reduces the unit interval, so can suppress fulminant splashing.This difference with the burning of gunpowder and blast is identical.So-called blast is the phenomenon that the energy transfer amount of unit interval produces when big.According to this reason, when the noncrystalline semiconductor film that (substrate temperature is approximately less than 400 ℃) form under to the so-called lower temperature with PECVD method or sputtering method etc. carried out fusion-crystallization by supplying with the high energy body, the high width of time half-peak of wishing the high energy body was more than about 100ns.In the application's invention, as previously discussed, can increase the high width of time half-peak simply, so, also can think the crystallization of the film that is difficult to carry out fusion-crystallizationization in the past.

(manufacture method of 1-5. thin film electronic device)

The high-energy body supplying device that has been described in detail till the last chapter and use the crystallized film of this device formation to can be applicable to the semiconductor device of TFT or LSI etc., or various thin film electronic devices such as metal-insulator-metal type element (MIM element), solar cell or printed base plate, can improve the performance of these devices greatly.In this chapter, be example, the manufacture method of good thin film electronic device is described with the highest TFT of possibility of its application.

Fig. 8 (a)～(d) is the skeleton diagram that the manufacturing process of the thin-film semiconductor device (so-called TFT) that becomes MIS type field-effect transistor is shown in the section mode.Using this figure to describe the summary of the manufacture method of the TFT relevant with the application's invention.

Use the example of common alkali-free glass among the present invention as substrate.On substrate 801, be the base protective film 802 of insulating properties material at first with apcvd method (APCVD method) or formation itself such as PECVD method or sputtering method.Secondly deposit becomes the semiconductor films such as intrinsic silicon films (first operation relevant with semiconductor film) of the active layer of thin-film semiconductor device subsequently.Semiconductor film forms with chemical vapor deposition methods (CVD method) such as PECVD method or APCVD method, LPCVD method or physical vapor depositions such as sputtering method or evaporation (PVD method).It is the high energy body of representative that the semiconductor film that obtains is like this supplied with laser, carries out fusion-crystallizationization (second operation relevant with semiconductor film).If the semiconductor film of initial deposit is a noncrystalline, or the mixed crystal matter that mixes of noncrystalline and micro-crystallization, then generally this operation is called crystallization.On the other hand, if the semiconductor film of initial deposit is many crystallines, then this operation is called and recrystallizes.In this manual both only are called crystallization, do not distinguish.If make the surface portion at least of film carry out fusion-crystallizationization by the supply of high energy body, then the both is corresponding to the application's fusion-crystallizationization.As from forming the viewpoint of high-quality crystallinity film with high productivity ratio at large substrate, fusion-crystallizationization is extraordinary method.This be because, in the fusion-crystallization method of being undertaken by the supply of high energy body, energy service time (the words of laser in this way, be its irradiation time) very short, be about 10ns to 500ns, and because energy supply area (laser radiation zone) also is local for whole base plate, so when the crystallization of film, can not make whole base plate be heated to high temperature simultaneously, so can not produce distortion or crack that the heating because of substrate causes yet.After having formed crystallinity semiconductor film (polysilicon film) according to the formation method of the crystallinity film that till a last chapter, has been described in detail, this crystallinity semiconductor film is processed into island, afterwards as the active layer semiconductor film 803 (Fig. 8 (a)) of transistorized active layer.

After the active layer semiconductor film forms, form gate insulating film 804 (Fig. 8 (b)) with CVD method or PVD method etc.

Then, become the metallic film of gate electrode 805 with PVD method or the deposit of CVD method.Because gate electrode is made in identical operation with identical materials with grating routing usually, so the resistance of this material must be low, and must be the material that can tolerate the maximum temperature (being about 350 ℃) that runs in the later thin film electronic device manufacturing process or chemicals etc. here.Here form tantalum (Ta) film (for first operation of metal) that possesses such character with sputtering method.Generally the tantalum films that forms with sputtering method is a beta structure, and its resistivity is up to about 200 μ Ω cm.In addition, internal stress is also strong, breaks easily when using as wiring.Therefore, in the application's invention,, improve film quality to the high energy body (for second operation of metal) of this tantalum films supply as laser.As use the fusion-crystallizationization that the method that is described in detail till the last chapter is carried out tantalum films, then crystallized film becomes the tantalum (Ta) of α structure.The tantalum of α structure is the system of crystallization of cubic crystal, and its crystal structure is body-centered cubic (bcc).In addition, the resistivity of the tantalum of this α structure is roughly 20 μ Ω cm to 60 μ Ω cm, its internal stress also a little less than.Compare with the tantalum of original beta structure, demonstrate significant advantage as wiring material.

Behind the metallic film that forms like this as gate electrode and grating routing, its shape is processed.Then the active layer semiconductor film is carried out foreign ion and inject, make source-drain area and channel formation region 806,807,808.(Fig. 8 (c)) at this moment because gate electrode becomes the mask that ion injects, so become a channel formation region self-alignment structure that under gate electrode, forms.Inject about foreign ion, can use ion doping method and ion and squeeze into method, the non-divergence type ion implantation apparatus of the former service quality injects hydride and the hydrogen that is injected into element, and latter's service quality divergence type ion implantation apparatus only injects desired impurity element.When making CMOS TFT, use suitable mask materials such as polyimide resin, alternately cover the side of NMOS or PMOS with mask, the ion that carries out separately with said method injects.

Secondly, form interlayer dielectric 809 with PVD method or CVD method.Inject and after interlayer dielectric forms, under the suitable thermal environment below 350 ℃, carry out several ten minutes to several hours heat treatment at ion, inject the activation of ion and baking of interlayer dielectric.After interlayer dielectric forms, leak opening contact hole in the source, extraction electrode and wiring 810,811 are leaked in the formation source.Leak with the metal of wiring and also can use fusion-crystallizationization with previous gate electrode with grating routing identical, the metallic film to a last chapter till narrated for becoming the source this moment.After having formed the crystallinity metal film, be electrode or wiring with this processing film, finish thin-film semiconductor device.(Fig. 8 (d)).

(2-1. is applicable to substrate of the present invention and base protective film)

Just be applicable to that in this chapter substrate of the present invention and base protective film describe.As applicable to substrate of the present invention, can use conductive material, carborundum (SiC) or aluminium oxide (Al such as metal ₂O ₃), semiconductor substrate such as transparent insulating material, silicon wafer such as aluminium nitride ceramic materials such as (AIN), vitreous silica or glass and LSI, sapphire (trigonal system Al that its processing is made ₂O ₃Crystallization) crystallinity megohmite insulant etc. such as.As the simple glass of cheapness, the #7059 glass or the #1737 glass that can use Corning Japan K. K. to make, or the OA-2 glass made of Nippon Electric Glass Co., Ltd., the NA35 glass that (strain) NH Techno-glass makes etc.When using the crystallinity semiconductive thin film to make thin-film semiconductor device, or when using the crystallinity metallic film to carry out metal line, no matter the kind of substrate how,, then on this insulating properties material, form the crystallinity film as long as the part of substrate is made of the insulating properties material at least.This insulating properties material is called base protective film in this application.When for example using vitreous silica,, can directly on fused silica substrate, form the crystallinity film because substrate itself is the insulating properties material as substrate.Maybe can be with silicon oxide film (SiO _X: 0＜x≤2) or silicon nitride film (Si ₃N _X: 0＜x≤4) etc. the insulating properties material forms the crystallinity film after forming as base protective film on the fused silica substrate.When using common glass during as substrate; the direct crystallinity film of deposition of semiconductor film etc. on the simple glass that itself is the insulating properties material; but, be preferably on the glass substrate with forming the crystallinity film again after insulating properties materials such as silicon oxide film or the silicon nitride film formation base protective film for the sodium mobile ions such as (Na) that contains in the glass is blended in the semiconductor film.By doing like this, the thin film electronic device of thin-film semiconductor device etc. uses and uses under high voltage through long-time, and its operating characteristic does not change, certain like this stability that just increased.Under the situation of crystallinity semiconductor film, except the situation that crystallinity megohmite insulants such as sapphire are used as substrate, be preferably in and form film on the base protective film.When using various ceramic substrates as substrate, base protective film preferably is set, prevent that the sintering raw material that help that add in the pottery from spreading the effect of sneaking in the film so that play.When metal material was used as substrate, in order to ensure insulating properties, base protective film was absolutely necessary.Moreover, in semiconductor substrate or LSI element, between the transistor or the interlayer dielectric between the wiring play the effect of base protective film.As long as do not produce flexible or distortion such as warpage, do not add any restriction fully for the size or the shape of substrate for the thermal environment in the manufacturing process.That is to the rectangular substrate more than about 600mm * 800mm, be arbitrarily, from the garden plate of diameter about 3 inches (76.2mm).

(2-2. is applicable to film of the present invention and comprises the gas of this formation element)

In this chapter,, the gas of the ambiance that is applicable to film of the present invention and records and narrates in forming (1-1) chapter describes about containing the gas that semiconductor film constitutes element.

The crystal material of all kinds can become the object material in the present invention.For example, the application is also applicable to adamantine fusion-crystallizationization etc.But when selecting semiconductive thin film or metallic film as the object material, effect of the present invention can present the most easily and reliably.About metal, all can adapt to for the metal of all kinds.Especially effectively as the tantalum of (1-5) Zhang Zhongyi explanation pass through that the high energy body is supplied with or fusion-crystallizationization changes the material of crystalline phase.In addition, the metal that the crystallization particle diameter is increased as the result of fusion-crystallizationization also is more satisfactory.In the film of the invention that is applicable to the application, semiconductive thin film is best suited for.This be because, the semiconductive thin film that in first operation, forms or amorphous, even perhaps crystalline, its quality also is lower.By the lower film of these quality being carried out the application's second operation, can easily improve its character, make it to become the crystallinity film of high-quality.

As the kind that is applicable to semiconductor film of the present invention, except the semiconductor film of silicon (Si) or germanium simple substance such as (Ge), can be SiGe (Si _XGe _1-X: 0＜x＜1) or silicon-carbon (Si _XC _1-X: 0＜x＜1) or germanium carbon (Ge _XC _1-X: 0＜x＜1) semiconductor film of column IV element complex such as, or the complex compounds semiconductor film of gallium arsenic (GaAs), indium antimony three races's elements such as (InSb) and group-v element, or also can be the complex compounds semiconductor film of cadmium selenium two family's elements such as (CdSe) and six family's elements.Perhaps, the present invention is also applicable to SiGe gallium arsenic (Si _XGe _YGa _ZAs _Z: what is called x+y+z=1) is further complex chemical compound semiconductor film or added the N type semiconductor film of phosphorus (P), arsenic (As), antimony donor elements such as (Sb) in these semiconductor films, or added the P type semiconductor film of boron (B), aluminium (Al), gallium recipient elements such as (Ga) in these semiconductor films.

As the gas of the formation element that contains semiconductor film, when semiconductor film is silicon (Si), be single silane (SiH ₄), disilane (Si ₂H ₆), trisilalkane (Si ₃H ₈), dichlorosilane (SiH ₂Cl ₂) wait silane.When germanium is semiconductor film, use germane (GeH ₄), at the semiconductor film that contains phosphorus (P) or boron (B) or when planning that intrinsic semiconductor film added these elements, use hydrogen phosphide (PH ₃) or diborane (B ₂H ₆) etc.Constitute gas as atmosphere, use the chemical substance that contains the element that constitutes above-mentioned various semiconductor films, but, be even more ideal so use the hydride that constitutes element because the part of these gases must remain in the semiconductor film.For example by dichlorosilane (SiH ₂Cl ₂) in the silicon fiml of film forming, let us not go into the question now for the size of amount, but must residual chlorine (Cl), when using this silicon fiml as the active layer of semiconductor device, residual chlorine will become the main cause that transistor characteristic degenerates.Thereby, compare with dichlorosilane, as single silane (SiH of the hydride that constitutes element ₄) comparatively desirable.

(2-3. is as the laser of high energy body)

The kind of the light when explanation is used laser as the high energy body in this chapter.In the application's invention, employed laser is had no particular limits, can use various light sources according to the situation of object material.At industrial widely-used KrF excimer laser (wavelength 248nm) or XeCl excimer laser (wavelength 308nm), its emission also is stable now.In excimer laser, except above-mentioned laser, also can use ArF excimer laser or XeF excimer laser (wavelength 351nm).In addition, also be in the state that can use YAG laser or various laser such as carbon dioxide gas volumetric laser, Ar main line laser (wavelength 514.5nm) or Ar by-pass laser (wavelength 488nm), HeNe laser (wavelength 632.8nm), HeCd laser (wavelength 441.6nm) or various pigment laser.Be that the absorption coefficients of these light in the noncrystalline composition such as XeF laser, Ar main line laser, Ar by-pass laser, HeNe laser, HeCd laser are greater than the absorption coefficient in crystallised component under the situation of semiconductor film of main component at the object material with silicon.This point means that the energy absorption of noncrystalline composition is more, compares temperature with crystallised component and rises easily in the system that noncrystalline and crystalline mix.That is, amorphous crystallization is easy to generate than recrystallizing of crystalline.As explained above such, in the fusion-crystallizationization of semiconductor film, semiconductor film is not being caused in the scope of damage, improve the crystallized film that energize can obtain high-quality.If the temperature of crystallised component rises easily, then the noncrystalline composition also residual during in semiconductor film is caused damage.In other words, crystallization do not finish fully during inner membrance just sustain damage.The fusion-crystallizationization that is very suitable for silicon based semiconductor film is we can say in not these evils concerning XeF laser etc.Therefore, importantly select the kind of high energy body like this, the absorption coefficient of the crystallinity object material after the absorption coefficient that makes the high energy body supply with preceding object material is supplied with greater than the high energy body.

Because KrF laser or the absorption coefficient of XeCl laser in the semiconductor film that with silicon is main component are bigger, so be suitable for the crystallization of the film of semiconductor thickness below 50nm.Because the absorption coefficient of XeF laser or HeCd laser is more a little bit smaller a little than the absorption coefficient of KrF laser or XeCl laser, so be suitable for the crystallization of the about 50nm of thickness to the silicon based semiconductor film of about 1000nm.Because the absorption coefficient in semiconductor film of Ar main line laser or Ar by-pass laser, HeNe laser is less, so be suitable for having the crystallization of the semiconductive thin film of the thickness more than about 1000nm.

As previously discussed, as adopting the present invention, can supply with the high energy body with very easy and stably carry out fusion-crystallizationization, can easily form high-quality crystallinity film simultaneously the object material.Moreover, can use such crystallinity film to make good thin film electronic device.Specifically, has following effect.

Effect 1) because carrying out crystallization safely and under the control of the ambiance of displacement easily, so impurity such as oxygen or nitrogen etc. or dust do not enter in the crystallinity film.Special is under the situation of semiconductor or metal etc. at the crystallinity film, can obtain high-quality crystallinity film with high-purity.

Effect 2) can under atmospheric atmosphere, supply with the high energy body, can realize the simplification of high-energy body supplying device.This point has reduced the price of using the thin film electronic device of crystallinity film, has improved productivity ratio simultaneously.

Effect 3) in fusion-crystallizationization, the formation element of object material must splash from the object material that is in molten condition or be evaporated.The present invention can protect entrance window to make it not to be subjected to this influence of evaporation, and the high energy body that the object material is subjected to always keeps constant.So just can obtain having the crystallized film of superperformance, the quality of this film is highly stable in addition.

Effect 4) when high energy body from laser radiation etc. to the object material that supply with carried out fusion-crystallization, in general, energize was high more, and the quality of resulting crystallization thing is good more.In the application's invention,,, therefore also improved the quality of crystallinity film so, also can suppress to evaporate splash phenomena even energize rises owing under atmospheric pressure supply with the high energy body.

Effect 5) in order to obtain good crystallinity film, important effect is played in surface control.In the application's invention, can carry out this control fully, therefore can obtain good crystallinity film.Moreover, because the surface state of will recombinating is controlled to identical state in each fusion-crystallizationization, so the membrane property of crystallinity film is also highly stable.

Effect 6) can make the energy service efficiency of high energy body obtain multiplication substantially.In addition, prolonged the high width of time half-peak, also can carry out crystallization the material that can not carry out crystallization in the past.

Description of drawings

Fig. 1 is the existing laser irradiation device of expression.

Fig. 2 is the figure of expression high-energy body supplying device of the present invention.

Fig. 3 is the figure of expression high-energy body supplying device of the present invention.

Fig. 4 is the figure of expression high-energy body supplying device of the present invention.

Fig. 5 is the figure of expression high-energy body supplying device of the present invention.

Fig. 6 is the figure that the energy time of the high energy body that the object material is subjected among expression the present invention changes.

Fig. 7 is the figure that the energy time of the high energy body that the object material is subjected among expression the present invention changes.

Fig. 8 (a)～(d) is the element section figure of each operation of making of the thin-film semiconductor device of expression one embodiment of the present of invention.

Fig. 9 is the figure that the formation of transmissive liquid crystal display device of the present invention is used in expression.

Figure 10 is the figure that the formation of electronic installation of the present invention is used in expression.

Figure 11 is the figure that the example (liquid crystal projection apparatus) of electronic installation of the present invention is used in expression.

Figure 12 is the figure that another example (personal computer) of electronic installation of the present invention is used in expression.

Figure 13 is the figure that another example (radio pager) of electronic installation of the present invention is used in expression.

Embodiment

Following with reference to accompanying drawing, illustrate in greater detail the present invention.

(embodiment 1)

On the large-size glass substrate of 360mm * 475mm * 1.1mm, form the base protective film that constitutes by silicon oxide film with the PECVD method, under the situation of not destroying vacuum on this base protective film deposition of intrinsic silicon fiml continuously.The thickness of (for first operation of silicon) base protective film is 300nm, and the semiconductor thickness is 60nm.In remaining in 380 ℃ PECVD device, settles the lower flat plate electrode temperature glass substrate with equilibrium at room temperature.The deposition conditions of silicon fiml is as follows.

Time: t=164s

Silane flow rate: SiH ₄=100SCCM

Argon flow: Ar=3000SCCM (material concentration 3.23%)

High frequency waves output: RF=600W (0.228W/cm ²)

Pressure: P=1.5Torr

Interelectrode distance: S=37.1mm

Lower flat plate electrode temperature: Tsus=380 ℃

Substrate surface temperature: Tsub=349 ℃

The deposition speed of the semiconductor film under this condition is 0.365nm/s, and the thickness of semiconductor film is 60nm.Hydrogen concentration in the silicon fiml that this external application thermal desorption gas spectrum (TDS) is measured is 10.39 atom %.As to use transmission electron microscope observation, this silicon fiml mainly be mixed crystal matter, and the noncrystalline composition is column structure.In the raman spectroscopy measurement result of this silicon fiml, only at 520cm ^-1Near see Raman shifts from crystallised component, demonstrating this routine silicon fiml is mixed crystal matter.

The silicon fiml that obtains is like this carried out laser radiation, carry out fusion-crystallizationization (for second operation of silicon).Carry out in the high-energy body supplying device that fusion-crystallizationization is shown in Figure 4 with laser radiation chamber (supply chamber).Irradiating laser is that wavelength is the KrF excimer laser of 248mm, the about 33ns of the high width of its half-peak, but owing to rely on time adjusting device to follow the reverberation time of delay incident once more of about 30ns, the about 60ns of the high width of substantial time half-peak.Time adjusting device is made of the combination of mirror, the about 9m of total optical path length of reverberation process.Incident light is with the angle incident of about 60 degree of off-normal.Because film is 20mm with the minimum distance of supplying with locular wall, be roughly 40mm so import the distance of the irradiation position on window and the film.Laser beam shape is 120 microns of width, the wire that length is 38 centimetres.The lap of the beam width direction of each irradiation is 90% of a beam width.Thereby Shu Yidong is 12 microns in the irradiation each time, is subjected to 10 laser radiations on the same point of semiconductor film.Laser energy density is 150mJcm ^-2Laser radiation is under atmospheric pressure carried out.The mist of argon and single silane is imported with 1slm from the gas stream hand-hole, and the steam vent from the normal that is positioned at film is discharged.Gas stream flows to the irradiation position on the film from importing window or route change device (comprising position regulating function or time adjusting device), flows to steam vent from irradiation position again.Silane concentration in the argon is about 100ppm, so the silane partial pressure in the laser radiation is about 76mTorr.Substrate temperature during laser radiation is 25 ℃ a room temperature.The semiconductor film of crystallization is as measuring with multi-wavelength decentralized ellipsograph by this way, and then the crystallization rate is 98%, and thickness is 55nm.In raman spectroscopy is measured, at the 515cm of expression from the Raman shifts of crystallised component ^-1Near the high width of half-peak occurs and be about 4.4cm ^-1Spike, illustrated and made the very high high-quality film of crystallinity.After crystallization step finishes, this crystallinity semiconductor film is carried out pattern etching, become the active layer semiconductor film of transistorized active layer after making.

Secondly form gate insulating film with the PECVD method.The gate insulating film that is made of silicon oxide film is with tetraethoxysilane TEOS (Si-(O-CH ₂-CH ₃) ₄) and oxygen (O ₂), water (H ₂O) be unstrpped gas, use argon as diluent gas, in 350 ℃ of following film forming of substrate surface temperature, its thickness is 100nm.After the gate insulating film deposit, under about 350 ℃ temperature, under the atmosphere of the about 80 ℃ steam of the partial pressure of oxygen that contains 0.2 air pressure of having an appointment and dew point, oxide-film is carried out about 3 hours heat treatment, carry out the quality improvement of dielectric film.

Secondly, constitute tantalum (Ta) film (for first operation of tantalum) of gate electrode with the sputtering method deposit.Substrate temperature during sputter is 150 ℃, and thickness is 500nm.Then resulting tantalum film is carried out laser radiation (for second operation of tantalum).Laser irradiation condition is except ambiance gas becomes the mist of argon and hydrogen, and the condition during with the crystallization of previous semiconductor film is identical.Hydrogen concentration in the argon is about 1%, thereby the hydrogen dividing potential drop in the laser radiation is about 7.6Torr.Tantalum film after the laser radiation is as described above, becomes the α structure, and its resistivity is about 40 μ Ω cm.After forming the tantalum films that constitutes gate electrode, carry out pattern etching.

Then semiconductor film is carried out foreign ion and inject, form source-drain area and channel region.This moment, gate electrode became the mask that ion injects, and raceway groove becomes the self-alignment structure that only forms under gate electrode.Make the TFT of CMOS structure in the present embodiment.When leak in the source that forms NMOS TFT, cover PMOS TFT part with polyimide resin, on the contrary, when leaking, cover NMOS TFT part with polyimide resin in the source that forms PMOS TFT, make CMOSTFT like this.The non-divergence type ion implantation apparatus of service quality carries out foreign ion and injects, and uses the concentration of diluting in hydrogen to be about 5% hydrogen phosphide (PH for NMOSTFT ₃) as unstrpped gas.Contain PH ₃ ⁺Or H ₂ ⁺Total ion injection rate be 1 * 10 ¹⁶Cm ^-2, the phosphorus atoms concentration in the source-drain area is 3 * 10 ²⁰Cm ^-2Substrate temperature when ion injects is 250 ℃.Use the concentration of in hydrogen, diluting to be about 5% borine (B for PMOS TFT ₂H ₆) as unstrpped gas.Contain B ₂H ₆ ⁺Or H ₂ ⁺Total ion injection rate be 1 * 10 ¹⁶Cm ^-2, the boron atomic concentration in the source-drain area is 3 * 10 ²⁰Cm ^-2Substrate temperature when ion injects still is 250 ℃.

Secondly form the interlayer dielectric that constitutes by silicon oxide film by the PECVD method of using TEOS.Substrate surface temperature during the interlayer dielectric film forming is 350 ℃, and thickness is 500nm., under 350 ℃ oxygen atmosphere carry out 1 hour heat treatment, inject the activation of ion and baking of interlayer dielectric thereafter.Then opening contact hole on source-drain area is used sputtering method deposit aluminium (Al).Substrate temperature during sputter is 150 ℃, and thickness is 500nm.Carry out the pattern etching that the source is leaked extraction electrode and become the aluminium film of wiring, so just finished thin-film semiconductor device.

Measure the transistor characteristic of the thin-film semiconductor device of trial-production like this.Source-drain current Ids in the time of will making transistor turns under source-drain voltage Vds=± 4V, gate voltage Vgs=± 10V is defined as conducting electric current I ON.(voltage+be the condition determination of NMOS ,-be the condition determination of PMOS) source-drain current when transistor is turn-offed is defined as cut-off current IOFF.Here, mensuration is under 25 ℃ of temperature, and to length L=5 of channel formation region micron, the transistor of width W=5 micron carries out.Mobility and threshold voltage calculate from saturation current.Be purpose with the dispersion of studying in transistorized performance and this substrate in the present embodiment, 50 transistors making in mode exhaustively on large substrate are measured.Its result as shown below.

NMOS?TFT

ION＝(74.3+9.0、-6.8)×10 ^-6A

IOFF＝(1.38+0.53、-0.37)×10 ^-12A

μ＝124.1±12.6cm ²·V ^-1·s ^-1

Vth＝2.13±0.13V

PMOS?TFT

ION＝(51.6+4.7、-4.1)×10 ^-6A

IOFF＝(3.87+0.99、-0.80)×10 ^-13A

μ＝69.3±6.04cm ²·V ^-1·s ^-1

Vth＝-1.11±0.11V

Like this, according to the present invention, under the operation maximum temperature (350 ℃) identical, and on large-scale common glass substrates, can make very good CMOS thin-film semiconductor device equably with high mobility with existing a-Si TFT.And, because crystallinity semiconductor film and gate oxidation films that the TFT that obtains with present embodiment has high-quality so transistorized reliability is very high, can carry out stable work in long-time.In the low temperature process of prior art, the uniformity of laser crystallization no matter in substrate, batch with criticize between all be very important problem.Yet,, can reduce the conducting electric current or the dispersion of cut-off current significantly as adopting the present invention.This inhomogeneity remarkable improvement means that the crystallinity silicon fiml of the application's invention is good, and laser irradiation device (high-energy body supplying device) carries out crystallization also highly stablely.In addition, because the stress of tantalum film is very little, resistance value is also low, so when thin-film semiconductor device of the present invention is applied to the LCD LCD, can obtain uniform high picture quality on whole LCD picture.Moreover, when forming circuit with thin-film semiconductor device of the present invention, not only can easily form so-called ball bearing made using such as shift register or analog switch, and can easily form level shift circuit or DA converter circuit, also have so-called complicated circuit such as clock forming circuit or ganmma controller (gamma) correcting circuit, timing control circuit.

(embodiment 2)

The NMOS thin-film semiconductor device that will be obtained by embodiment 1 is as the switch element of being used by the pixel of the color LCD of 200 (OK) * 320 (row) * 3 (look)=192000 (pixel) formation, 6 bits digital data drivers (row side driver) and scanner driver (row side driver) are built in the CMOS thin-film semiconductor device that is obtained by embodiment 1, make active-matrix substrate.The digital data driver of present embodiment is made of clock cable and clock forming circuit, shift register circuit, NOR door, data image holding wire, latch cicuit 1, latch pulse line, latch cicuit 2, reset line 1, AND door, reference potential line, reset line 2,6 D/A converters, cmos analog switch, common potential line and the source line reset transistor cut apart according to electric capacity, links to each other with the source line of pixel parts from the output of cmos analog switch.The electric capacity of D/A converter part satisfies C ₀=C ₁/ 2=C ₂/ 4=C ₃/ 8=C ₄/ 16=C ₅/ 32 relation.The digital image signal of exporting from the video RAM (VRAM) of computer can be directly inputted to the digital image signal line.In the pixel parts of the active-matrix substrate of present embodiment, source electrode and source wiring, drain electrode (pixel capacitors) are made of aluminium, form reflection type LCD.Made the liquid crystal display screen that the active-matrix substrate that will obtain like this is used as one of a pair of substrate.Use disperse in the liquid crystal of between a pair of substrate, filling the polymer dispersed liquid crystal of black pigment (PDLC), made the reflective liquid crystal screen of normal black formula when making alive (on liquid crystal not be black the demonstration).Resulting liquid crystal display screen is connected with outside wiring, makes liquid crystal indicator.As a result, the conducting resistance of MNOS and PMOS and transistor capacitance equate respectively, and TFT is high performance, moreover, transistor parasitic capacitance is very little, in addition owing to characteristic on the whole base plate surface is uniformly, so 6 bits digital data drivers might as well, scanner driver might as well, all can in wide working range, normally work, and about pixel parts, because aperture opening ratio is very high, even use the PDLC of mineral black disperse, also can be made into the high liquid crystal indicator of display quality.In addition, because the manufacturing process of active-matrix substrate also is stable, so can stably and with low cost make liquid crystal indicator.

This liquid crystal indicator is assembled in the framework of portable personal computer (notebook PC) of full color.Because the built-in 6 bits digital data drivers of active-matrix substrate, be directly inputted in the liquid crystal indicator from the digital image signal of computer, so circuit structure becomes simply, the while consumed power is very little.Active thin film semiconductor device is high performance, and this notebook PC is the good electron device with very beautiful picture.In addition, the reflecting liquid crystal display unit is the fact of device with reflection-type of high aperture, does not need back illumination, so also can realize the miniaturization and and long-time use of battery.Make the electronic installation of the microminiature light weight that can use for a long time and have good display frame thus.

In the above-described embodiment, use the reflection-type active-matrix substrate to describe, but present embodiment is also applicable to the liquid crystal indicator that has used the transmission-type active-matrix substrate, the integral body of this configuration example shown in Figure 9 as example.That is, liquid crystal indicator has: back illumination lamp 900, Polarizer 901, the active-matrix substrate 903 that drive circuit 902 is housed, liquid crystal 904, counter substrate 905 and Polarizer 906.

The electronic installation that uses the liquid crystal indicator of the foregoing description and constitute comprises: display screen 1006, clock generating circuit 1008 and the power circuit 1010 of the display message output source 1000 shown in Figure 10, display message treatment circuit 1002, display driver circuit 1004, liquid crystal display screen etc.Display message output source 1000 comprises memories such as ROM, RAM, and the formations such as tuning circuit of output tuning with TV signal, and its is according to from the clock of clock generation circuit 1008, display message such as outputting video signal.Display message treatment circuit 1002 is handled and the output display message according to the clock from clock generation circuit 1008.This display message treatment circuit 1002 can comprise and for example amplifies polarity inversion circuit, phase unwrapping circuit, rotation circuit, ganmma controller correction circuit or clamp circuit etc.Drive circuit 1004 comprises the scan-side drive circuit and the data side drive circuit constitutes, and liquid crystal display screen 1006 is carried out display driver.Power circuit 1010 is supplied with above-mentioned each circuit with electric power.

As the electronic installation of this formation, can enumerate video tape recorder, electronic memo, electronic desktop computer, vehicle navigation apparatus, the POS terminal shown in the liquid crystal projection apparatus shown in Figure 11, Figure 12, possess the device of contact type panel etc. corresponding to radio pager or mobile phone, word processor, the TV shown in multimedia personal computer (PC) and engineering work station (EWS), Figure 13, find a view type or monitor type directly perceived.

Projecting apparatus shown in Figure 11 is to use the porjection type projecting apparatus of transmission-type liquid crystal screen as light valve, for example uses the optical system of prism mode.

In Figure 11, in projecting apparatus 1100, the projection light that will penetrate from the lamp unit 1102 of white light source is divided into the three primary colors of R, G, B with a plurality of speculums 1106 and two dichronic mirrors 1108 in the inside of photoconductive device 1104, it is directed on three liquid crystal display screen 1110R, the 1110G and 1110B of demonstration image of all kinds.To incide on the colour splitting prism 1112 from three directions with the light that each liquid crystal display screen 1110R, 1110G and 1110B have modulated then.In colour splitting prism 1112, because crooked 90 degree of ruddiness R and green glow B, blue streak G direct projection is come in, so image of all kinds is synthesized, throws chromatic image by projection lens 1114 on screen etc.

Personal computer 1200 shown in Figure 12 comprises host machine part 1204 and the liquid crystal display picture 1206 that possesses keyboard 1202.

Radio pager 1300 shown in Figure 13 comprises liquid crystal display substrate 1304, has the photoconduction 1306 of back illumination 1306a in metal framework 1302,1310,1312, two elastic electric conductors 1314,1316 of circuit substrate the 1308, the 1st, the 2nd barricade and thin slice are entrusted (film carrier tape) 1318.Two elastic electric conductors 1314,1316 and thin slice are entrusted 1318 liquid crystal display substrate 1304 and circuit substrate 1308 are coupled together.

Here, in the liquid crystal display substrate 1304 liquid crystal is enclosed between two transparency carrier 1304a, 1304b, constituted the dot matrix type liquid crystal display screen thus at least.On a transparency carrier, can form the drive circuit 1004 shown in Figure 10 or also form display message treatment circuit 1002 in addition, the circuit that does not have installation on liquid crystal display substrate 1304, circuit is installed in the outside that can be used as liquid crystal display substrate, can be installed on the circuit substrate 1308 under the situation of Figure 13.

Figure 13 illustrates the structure of radio pager, in this structure, need circuit substrate 1308 beyond the liquid crystal display substrate 1304, but using under the situation of liquid crystal indicator as parts of electronic installation, when drive circuit etc. was installed on transparency carrier, the least unit of this liquid crystal indicator was a liquid crystal display substrate 1304.Or, also liquid crystal display substrate 1304 can be fixed on as the parts of the parts on the metal frame 1302 of framework as electronic installation, promptly liquid crystal indicator uses.Have again, under the situation of back illumination, in metal framework 1302, liquid crystal display substrate 1304 and the photoconduction 1306 that possesses back light 1306a are combined, can constitute liquid crystal indicator.

Have again, the invention is not restricted to the foregoing description, in the scope of main idea of the present invention, can implement various distortion.For example, the present invention is not only applicable to the driving of the various liquid crystal panels of implementing, and applicable to electroluminescence, plasma display system.

As previously discussed, high-energy body supplying device of the present invention can be made high-quality crystallized film highly stablely.In addition, the crystallinity film that obtains like this can directly apply to the thin film electronic device of thin-film semiconductor device etc., can improve its performance greatly.Thereby, as according to words of the present invention, for example can use low temperature process to make high performance thin-film semiconductor device, in this low temperature process, can use cheap glass substrate.When the manufacturing that applies the present invention to active matrix liquid crystal display apparatus, can be easily and stably make large-scale and high-quality liquid crystal indicator.In addition, when the manufacturing of the electronic circuit that is applied to other, also can be easily and stably make high-quality electronic circuit.

In addition, because thin film semiconductor device of the present invention is cheap and high performance, the active-matrix substrate of pretending to active matrix liquid crystal display apparatus is only.Be only particularly as the active-matrix substrate that requires high performance built-in drive.

In addition, because thin film semiconductor device of the present invention is cheap and high performance, the notebook PC and the various display of pretending to full color are only.

In addition, because thin film semiconductor device of the present invention is cheap and high performance, so in general should be able to be widely accepted.

Claims (8)

1. the formation method of a crystallinity film, this method is included in film forming first operation on the substrate and the superficial layer at least of this film is carried out second operation of crystallization, it is characterized in that: in this second operation, under the branch that contains inert gas and hydrogen molecule and hydrogen is pressed in ambient containing hydrogen atmosphere more than the 10mTorr, below the 5Torr, make the fusion of superficial layer at least of this film carry out crystallization.

2. the formation method of a crystallinity film, this method is included in film forming first operation on the substrate and the superficial layer at least of this film is carried out second operation of crystallization, it is characterized in that: in this second operation, under the branch of halide that contains inert gas and hydrogen and hydrogen is pressed in ambient containing hydrogen atmosphere more than the 10mTorr, below the 5Torr, make the fusion of superficial layer at least of this film carry out crystallization.

3. the formation method of crystallinity film according to claim 1 and 2 is characterized in that: described second operation is carried out under the pressure more than the atmospheric pressure.

4. the formation method of crystallinity film according to claim 1 and 2 is characterized in that: described inert gas is a rare gas.

5. the formation method of crystallinity film according to claim 4 is characterized in that: described rare gas is argon.

6. the formation method of crystallinity film according to claim 1 and 2 is characterized in that: in described second operation, to described membrane supplying high energy body, make the surface at least of this film produce fusion.

7. the formation method of crystallinity film according to claim 6 is characterized in that: described high energy body is a light.

8. the formation method of crystallinity film according to claim 6 is characterized in that: described high energy body is a laser.

Images