CN113140490A - Method for sorting LED crystal grains in wafer - Google Patents

Method for sorting LED crystal grains in wafer Download PDF

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Publication number
CN113140490A
CN113140490A CN202110437689.4A CN202110437689A CN113140490A CN 113140490 A CN113140490 A CN 113140490A CN 202110437689 A CN202110437689 A CN 202110437689A CN 113140490 A CN113140490 A CN 113140490A
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wafer
led crystal
led
crystal grains
sorting
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CN113140490B (en
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谷泓毅
冯佩瑜
蔡和勋
徐晓刚
陈春桂
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Xiamen Changelight Co Ltd
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Xiamen Changelight Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67271—Sorting devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof

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  • Manufacturing & Machinery (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

The application discloses a method for sorting LED crystal grains in a wafer, which comprises the following steps: scanning and testing the LED crystal grains in the wafer to generate a first test drawing file containing the position information and the performance information of each LED crystal grain; deleting the position information of the LED crystal grains outside the first boundary line in the wafer in the first test drawing file to obtain a second test drawing file; separating and scanning each LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain; based on the position information of each LED crystal grain in the second test drawing file and the position information of each LED crystal grain in the scanning drawing file, selecting preset LED crystal grains from the wafer; the position information of the preset LED crystal grains is contained in the scanning image file and is not contained in the second testing image file, so that a large number of LED crystal grains which are positioned outside the first boundary line and have performance not meeting the preset condition in the wafer can be efficiently sorted, and the sorting efficiency is improved.

Description

Method for sorting LED crystal grains in wafer
Technical Field
The application relates to the technical field of semiconductor light emitting diodes, in particular to a method for sorting LED crystal grains in a wafer.
Background
With the development of semiconductor technology, Light-Emitting diodes (LEDs) have been widely used in various fields of our production and life, and therefore, the performance and quality of LED chips are particularly important. In the production process of the LED chip, each LED die in the wafer is usually tested and sorted, so that the damaged or unqualified LED die is sorted out, and the qualified LED die is packaged to form the LED chip.
For small-sized (below 8 mil) LED dies, a sorting method commonly used in the industry is to perform ink spotting and marking on LED dies with unqualified quality in a wafer, identify the LED dies subjected to ink spotting by using an Automated Optical Inspection (AOI), and then sort the LED dies subjected to ink spotting by using a sorting machine. However, because the LED dies with poor quality on the wafer are mainly concentrated on the edge area of the wafer, and the number of the LED dies is large, and may be more than ten thousand, the sorting method for sorting the LED dies with poor quality on the wafer by dot-ink marking one by one has a low sorting efficiency.
Disclosure of Invention
In order to solve the above technical problem, embodiments of the present application provide a method for sorting LED dies in a wafer, so as to efficiently sort out a large number of LED dies with unqualified quality in a wafer edge area, and improve the sorting efficiency.
In order to solve the above problem, the embodiment of the present application provides the following technical solutions:
a method for sorting LED crystal grains in a wafer comprises the following steps:
scanning and testing the LED crystal grains in the wafer to generate a first test drawing file containing the position information and the performance information of each LED crystal grain;
deleting the position information of the LED crystal grains outside the first boundary line in the wafer in the first test drawing file according to the performance information of each LED crystal grain in the first test drawing file to obtain a second test drawing file, wherein the performances of the LED crystal grains outside the first boundary line and the first boundary line in the wafer do not meet preset conditions, the performances of at least part of the LED crystal grains within the first boundary line in the wafer meet the preset conditions, and the first boundary line comprises at least one circle of LED crystal grains;
separating and scanning each LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain;
based on the position information of each LED crystal grain in the second test drawing file and the position information of each LED crystal grain in the scanning drawing file, selecting preset LED crystal grains from the wafer;
wherein the position information of the predetermined LED die is included in the scan drawing file and is not included in the second test drawing file.
Optionally, the separating and scanning each LED die in the wafer, and generating a scanning drawing file including position information of each separated LED die includes:
carrying out cutting, splitting and film expanding treatment on the wafer, and separating each LED crystal grain in the wafer;
and scanning each separated LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain.
Optionally, based on the position information of each LED die in the second test drawing file and the position information of each LED die in the scanning drawing file, the step of sorting out preset LED dies from the wafer includes:
combining the second test image file and the scanning image file based on the relative position of each LED crystal grain in the wafer to form a sorting image file, and screening out the position information of the preset LED crystal grain in the wafer in the combining process;
setting the type input box information of the preset LED crystal grains in the wafer in the sorting drawing file as a first-level type input box based on the position information of the preset LED crystal grains in the wafer;
based on the performance information of each LED crystal grain in the sorting drawing file, setting the class input box information of the LED crystal grains, except the preset LED crystal grains, of which the performances do not meet the preset conditions in the wafer, in the sorting drawing file as a second-level class input box, and setting the class input box information of the LED crystal grains, of which the performances meet the preset conditions, in the wafer, in the sorting drawing file as a third-level class input box;
and selecting preset LED crystal grains from the wafer according to the type input box information of each LED crystal grain in the selection drawing file.
Optionally, the step of sorting preset LED dies from the wafer according to the type input box information of each LED die in the sorting drawing file includes:
setting the sorting condition of a sorting machine according to the information of the category input box of each LED crystal grain in the sorting drawing file, wherein the sorting condition is that only the LED crystal grains of which the information of the category input box in the sorting drawing file is the second-level category input box in the wafer are sorted;
based on the sorting conditions, sorting the LED crystal grains on the first boundary line in the wafer and the LED crystal grains with the performance not meeting the preset conditions within the first boundary line in the wafer by using a sorting machine, and obtaining traces of the first boundary line in the wafer;
and scraping the preset LED crystal grains in the wafer according to the trace of the first boundary line.
Optionally, the method further includes:
and after scraping the preset LED crystal grains in the wafer, carrying out missed selection inspection on the LED crystal grains in the wafer based on the performance information of the LED crystal grains in the selection graph file, and if the LED crystal grains which do not meet the preset conditions still exist in the wafer, continuously selecting the LED crystal grains which do not meet the preset conditions until all the LED crystal grains which do not meet the preset conditions in the wafer are selected.
Optionally, the method further includes:
and performing appearance inspection on each LED crystal grain with the performance meeting the preset condition in the wafer.
Optionally, the performance information of the LED die includes: the LED crystal grain has at least one of wavelength, luminous intensity, starting voltage, electric leakage, electrostatic capacity and working voltage.
Compared with the prior art, the technical scheme has the following advantages:
the method for sorting the LED crystal grains in the wafer provided by the embodiment of the application comprises the following steps: scanning and testing the LED crystal grains in the wafer to generate a first test drawing file containing the position information and the performance information of each LED crystal grain; deleting the position information of the LED crystal grains outside the first boundary line in the wafer in the first test drawing file according to the performance information of each LED crystal grain in the first test drawing file to obtain a second test drawing file, wherein the performances of the LED crystal grains outside the first boundary line and the first boundary line in the wafer do not meet preset conditions, the performances of at least part of the LED crystal grains within the first boundary line in the wafer meet the preset conditions, and the first boundary line comprises at least one circle of LED crystal grains; separating and scanning each LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain; based on the position information of each LED crystal grain in the second test drawing file and the position information of each LED crystal grain in the scanning drawing file, selecting preset LED crystal grains from the wafer; the position information of the preset LED crystal grains is contained in the scanning image file and is not contained in the second testing image file, so that a large number of LED crystal grains which are positioned outside the first boundary line and have performance not meeting the preset condition in the wafer can be efficiently sorted, and the sorting efficiency is improved.
In addition, the sorting method provided by the embodiment of the application cancels the ink dispensing process, so that the yield loss caused by ink overflow is avoided, the condition that the ink dots shield the structures such as the electrodes and the light emitting areas of the LED crystal grains is avoided, the recognition capability of the sorting machine for the LED crystal grains with the performance not meeting the preset condition in the wafer is further improved, the picking missing rate of the sorting machine is reduced, the risk of the LED crystal grains with the performance not meeting the preset condition in the wafer flowing out is reduced, and the working efficiency is improved.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic view of a process for sorting LED dies with unsatisfactory performance parameters in a wafer by a spotting process in the prior art;
fig. 2 is a schematic flow chart illustrating a method for sorting LED dies in a wafer according to an embodiment of the present application;
FIG. 3 is a schematic view of a wafer;
fig. 4 is a schematic diagram of an area of the wafer shown in fig. 3 where the LED dies located on and within the first boundary line are located.
Fig. 5 is a schematic flow chart illustrating a process of separating and scanning each LED die in a wafer to generate a scanning image file including position information of each separated LED die in the method for sorting LED dies in a wafer according to another embodiment of the present application;
fig. 6 is a schematic flow chart illustrating a process of sorting preset LED dies from a wafer based on the position information of each LED die in a second test drawing file and the position information of each LED die in a scanning drawing file in the method for sorting LED dies in a wafer according to yet another embodiment of the present application;
fig. 7 is a schematic flow chart illustrating a process of sorting predetermined LED dies from a wafer according to information of a category input box of each LED die in a sorting map file in a method for sorting LED dies in a wafer according to yet another embodiment of the present application;
FIG. 8 is a diagram illustrating the LED dies on the first boundary line of the wafer and the LED dies within the first boundary line of the wafer with performance not meeting the predetermined condition after being sorted out;
fig. 9 is a schematic flow chart illustrating a method for sorting LED dies in a wafer according to another embodiment of the present application;
fig. 10 is a flowchart illustrating a method for sorting LED dies in a wafer according to yet another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be practiced in other ways than those described herein, and it will be apparent to those of ordinary skill in the art that the present application is not limited to the specific embodiments disclosed below.
Next, the present application will be described in detail with reference to the drawings, and in the detailed description of the embodiments of the present application, the cross-sectional views illustrating the structure of the device are not enlarged partially according to the general scale for convenience of illustration, and the drawings are only examples, which should not limit the scope of the protection of the present application. In addition, the three-dimensional dimensions of length, width and depth should be included in the actual fabrication.
As described in the background section, because the LED dies with poor quality in the wafer are mainly concentrated in the edge area of the wafer, and the number of the LED dies is large, and may be more than ten thousand, the sorting method for sorting the LED dies with poor quality in the wafer by dot-ink marking one by one has a low sorting efficiency.
Fig. 1 is a schematic diagram of a prior art process for sorting LED dies with unsatisfactory performance parameters in a wafer by a dot ink process, where as shown in fig. 1, the sorting process includes:
s01: carrying out comprehensive scanning and testing on the wafer to generate a test drawing file containing the coordinates and performance parameters of each LED crystal grain;
s02: based on the performance parameters of all the LED crystal grains in the test drawing file, carrying out ink point marking on the LED crystal grains of which the performance parameters in the wafer do not meet the requirements;
s03: cutting, splitting and film expanding are carried out on each LED crystal grain in the wafer so as to separate each LED crystal grain in the wafer;
s04: fully scanning the wafer by using an Automatic Optical Inspection (AOI) machine to identify LED crystal grains marked by point ink in the wafer;
s05: scraping the edge of the wafer to scrape the edge area of the wafer from the rows of the LED crystal grains after ink is spotted;
s06: picking out the rest LED crystal grains after being dotted with ink in the wafer by using a sorting machine;
s07: and carrying out appearance inspection on each LED crystal grain with the performance parameter meeting the requirement in the wafer.
The inventor researches and discovers that the sorting process has the following problems:
firstly, because the LED dies with unsatisfactory performance parameters on the wafer are mainly concentrated on the edge area of the wafer, and the number of the LED dies is large, and there may be more than ten thousand LED dies, the sorting method of sorting the LED dies with unsatisfactory performance parameters on the wafer by one-by-one dot-ink marking has a low sorting efficiency.
Secondly, when the LED crystal grains with the performance parameters not meeting the requirements in the wafer are subjected to ink-spotting marking, the ink is liquid and is easy to flow to cause ink overflow, so that the LED crystal grains with the performance parameters meeting the requirements can be adhered with ink to cause yield loss; moreover, the ink dots easily cover the structures such as the electrodes and the light emitting areas of the LED crystal grains, so that the sorting machine cannot identify the LED crystal grains according to the structures such as the electrodes and the light emitting areas of the LED crystal grains, and the sorting machine is difficult to sort.
And when the edge scraping operation is performed on the wafer, no obvious boundary exists between the plurality of rows of LED crystal grains subjected to ink spotting in the edge area of the wafer and the LED crystal grains in the wafer, so that operators can easily miss or scrape more, and further yield loss is caused.
In view of the above, the present invention provides a method for sorting LED dies in a wafer, which eliminates a dot ink process, as shown in fig. 2, and the method includes:
s1: and scanning and testing the LED crystal grains in the wafer to generate a first test drawing file containing the position information and the performance information of each LED crystal grain.
Specifically, each LED die in the wafer is scanned and tested by using a detection device to obtain the position information and the performance information of each LED die in the wafer, and the first test diagram file is generated, so that the position information and the performance information of any LED die in the wafer can be found according to the first test diagram file in the following process, and an important basis is provided for the following sorting step.
Optionally, in an embodiment of the present application, the performance information of the LED die includes: the LED crystal grain has at least one of wavelength, luminous intensity, starting voltage, electric leakage, electrostatic capacity and working voltage.
S2: and deleting the position information of the LED crystal grains outside the first boundary line in the wafer in the first test drawing file according to the performance information of each LED crystal grain in the first test drawing file to obtain a second test drawing file, wherein the performances of the LED crystal grains outside the first boundary line and the first boundary line in the wafer do not meet preset conditions, the performances of at least part of the LED crystal grains within the first boundary line in the wafer meet the preset conditions, and the first boundary line comprises at least one circle of LED crystal grains.
Specifically, according to the performance information of each LED die in the first test drawing file, the position information of all LED dies in the wafer, the performance of which does not meet the preset condition, in the first test drawing file can be found, so that according to the position information of all LED dies in the wafer, the performance of which does not meet the preset condition, in the first test drawing file, the position information of LED dies in the wafer, which are located outside the first boundary line, in the first test drawing file is deleted, and the second test drawing file is obtained, so that the second test drawing file does not include the position information of LED dies in the wafer, which are located outside the first boundary line.
Fig. 3 shows a schematic view of a wafer, wherein the dashed line in fig. 3 represents the boundary of the wafer, the solid line represents a first dividing line 21 in the wafer, as can be seen from fig. 3, said first dividing line 21 divides the wafer into two regions, wherein, the area of the wafer within the first boundary line is a first area 22, the performance of at least part of the LED dies in the first area 22 satisfies the preset condition, and the LED crystal grains with the performance not meeting the preset condition in the first area are scattered and less in quantity, a region 21 on the first boundary line and a region 23 outside the first boundary line in the wafer form a second region 24, the performance of the LED dies in the second region 24 does not satisfy the preset condition, that is, the LED dies with the performance not meeting the predetermined condition in the wafer are mainly concentrated in the second area 24.
Optionally, in an embodiment of the present application, the first dividing line 21 includes a circle of LED dies, that is, the LED dies on the first dividing line 21 in the wafer are a circle of LED dies closest to the first area 22 in the second area 24 in the wafer; in another embodiment of the present application, the first dividing line 21 includes at least two circles of LED dies, that is, the LED die on the first dividing line 21 in the wafer is at least two circles of LED dies closest to the first area 22 in the second area 24 in the wafer. The present application is not limited thereto, as the case may be.
In the above embodiment, the position information and the performance information of the LED dies included in the first test drawing file are the position information and the performance information of all the LED dies in the wafer, and all the LED dies in the wafer are enclosed in the boundary of the wafer, as shown in fig. 3. The position information and the performance information of the LED dies included in the second mapping file are the position information and the performance information of the LED dies located on the first boundary line 21 and within the first boundary line 21 in the wafer, and the area where the LED dies located on the first boundary line 21 and within the first boundary line 21 in the wafer are located is as shown in fig. 4, that is, the area where the LED dies remaining after the LED dies located outside the first boundary line 21 are removed in the wafer shown in fig. 3 are located.
It should be noted that in S2, only the position information of the LED dies located outside the first boundary line in the wafer in the first test diagram file is deleted, so that the second test diagram file does not include the position information of the LED dies located outside the first boundary line in the wafer, but the LED dies located outside the first boundary line in the wafer still exist.
It should be further noted that, the performance parameters of the LED dies are different, and the preset conditions for determining whether the performance parameters of the LED dies meet the application requirements are also different, for example, the performance parameters of the LED dies are wavelengths, and the preset conditions are that the wavelengths of the LED dies are within a preset wavelength range.
S3: and separating and scanning each LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain.
Specifically, in an embodiment of the present application, as shown in fig. 5, the separating and scanning each LED die in the wafer, and generating the scanning drawing file including the position information of each separated LED die includes:
s31: and carrying out cutting, splitting and film expanding treatment on the wafer, and separating each LED crystal grain in the wafer.
Specifically, firstly, the wafer is cut, and a cutting groove is formed among each LED crystal grain in the wafer; secondly, separating the LED crystal grains in the wafer through a splitting process according to the cutting groove, wherein the LED crystal grains in the wafer are still closely arranged at the moment, and the damage of the LED crystal grains is easily caused by directly separating the LED crystal grains due to the small size of the LED crystal grains; and then, on the basis of cutting and splitting processes, performing film expansion treatment on each LED crystal grain in the wafer, and safely separating each LED crystal grain in the wafer so as to sort out the LED crystal grains with the performance not meeting the preset condition in the wafer in the following process.
S32: and scanning each separated LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain.
It should be noted that, as is known from the foregoing, although the second test pattern file does not include the position information of the LED dies located outside the first boundary line in the wafer, the LED dies located outside the first boundary line in the wafer still exist, so that, in S32, when scanning each separated LED die in the wafer, the LED dies located outside the first boundary line in the wafer are still scanned, so that the scan pattern file includes the position information of the LED dies located outside the first boundary line in the wafer, that is, the scan pattern file includes the position information of all the LED dies in the wafer.
In S32, the separated LED dies in the wafer are scanned by using an automatic optical inspection machine AOI to generate the scanning drawing file, where the scanning drawing file includes not only the position information of the separated LED dies, but also the appearance and the shape of the separated LED dies.
S4: based on the position information of each LED crystal grain in the second test drawing file and the position information of each LED crystal grain in the scanning drawing file, selecting preset LED crystal grains from the wafer;
wherein the position information of the predetermined LED die is included in the scan drawing file and is not included in the second test drawing file.
It should be noted that, because the scan diagram file includes the location information of all the LED dies in the wafer, and the second test diagram file only includes the location information of the LED dies in the wafer that are located on the first boundary line and within the first boundary line, and does not include the location information of the LED dies in the wafer that are located outside the first boundary line, based on the location information of each LED die in the second test diagram file and the location information of each LED die in the scan diagram file, the location information of the LED dies that are included in the scan diagram file and not included in the second test diagram file can be screened out, and the location information of these LED dies is the location information of the LED dies in the wafer that are located outside the first boundary line, that is, the location information of the preset LED dies, that is, the LED dies in the wafer that are located outside the first boundary line, therefore, the preset LED crystal grains can be sorted from the wafer conveniently on the basis of the position information of the sorted preset LED crystal grains.
As is known from the foregoing, the LED dies in the wafer, the performance of which does not satisfy the preset condition, are mainly concentrated in the edge area of the wafer, that is, the wafer is located on the first boundary line and in the area outside the first boundary line, and according to the location information of each LED die in the second test diagram file and the location information of each LED die in the scan diagram file, the sorting method provided in the embodiment of the present application can efficiently sort out a large number of LED dies in the wafer, the performance of which does not satisfy the preset condition, outside the first boundary line, and further can sort out the LED dies in the wafer, which are outside the first boundary line, based on the location information of the LED dies in the wafer, so as to improve the sorting efficiency.
In addition, the sorting method provided by the embodiment of the application cancels the ink dispensing process, so that the yield loss caused by ink overflow is avoided, the condition that the ink dots shield the structures such as the electrodes and the light emitting areas of the LED crystal grains is avoided, the recognition capability of the sorting machine for the LED crystal grains with the performance not meeting the preset condition in the wafer is further improved, the picking missing rate of the sorting machine is reduced, the risk of the LED crystal grains with the performance not meeting the preset condition in the wafer flowing out is reduced, and the working efficiency is improved.
Specifically, in an embodiment of the present application, as shown in fig. 6, the selecting a preset LED die from the wafer based on the position information of each LED die in the second test drawing file and the position information of each LED die in the scan drawing file includes:
s41: and combining the second test image file and the scanning image file based on the relative position of each LED crystal grain in the wafer to form a sorting image file, and screening out the position information of the preset LED crystal grain in the wafer in the combining process.
In S3, in order to separate each LED die in the wafer, each LED die in the wafer is cut, split, and spread so that the position information of each LED die after separation in the wafer is different from the position information of each LED die before separation, that is, for the same LED die, the position information in the scan image file is different from the position information in the second test image file, but the relative position of each LED die in the wafer does not change in the cutting, splitting, and spreading processes, so in this embodiment of the present application, the second test image file and the scan image file are combined based on the relative position of each LED die in the wafer, so that the second test image file and the scan image file can be accurately combined to form the sorting image file.
It should be further noted that, in the actual work, the automatic optical inspection visual inspection machine AOI scans each separated LED die in the wafer, and when the scan image file is generated, the second test image file and the scan image file are combined to form the sorting image file based on the relative position of each LED die in the wafer, that is, the automatic optical inspection visual inspection machine AOI scans each separated LED die in the wafer to generate the scan image file, and combines the second test image file and the scan image file based on the relative position of each LED die in the wafer to form the sorting image file, and during the combining process, the position information of each LED die in the scan image file is converted into the position information of each LED die in the second test image file by performing coordinate conversion on the position information of each LED die in the scan image file, and using the converted position information of each LED die in the scan drawing file as the position information of each LED die in the sort drawing file, wherein the coordinate conversion of the position information of the LED die in the scan drawing file outside the first boundary line in the wafer can be performed according to the coordinate conversion of the position information of the LED die in the scan drawing file on the first boundary line or within the first boundary line in the wafer. In addition, the sorting drawing file also comprises appearance and appearance of each LED crystal grain in the scanning drawing file and performance information of each LED crystal grain in the second testing drawing file.
Therefore, the second test drawing file and the scanning drawing file are combined, so that the sorting drawing file comprises information such as position information, performance information and appearance of each LED crystal grain in the wafer.
S42: and setting the type input box information of the preset LED crystal grains in the wafer in the sorting drawing file as a first-level type input box based on the position information of the preset LED crystal grains in the wafer.
In actual operation, when the sorting machine sorts each LED die in the wafer, the sorting is performed based on the information of the type input box (Bin) of each LED die in the wafer in the sorting map file, and therefore, the information of the type input box of each LED die in the sorting map file needs to be set.
Specifically, in S42, since the location information of the preset LED die in the wafer that has been screened in S41 is known, that is, the location information of the preset LED die in the sorting map file in the wafer is known, the category input box information of the preset LED die in the wafer in the sorting map file may be set as the first-level category input box, for example, as Bin0, based on the location information of the preset LED die in the wafer in the sorting map file.
S43: and based on the performance information of each LED crystal grain in the sorting drawing file, setting the class input box information of the LED crystal grains, except the preset LED crystal grains, of which the performances do not meet the preset conditions, in the sorting drawing file as a second-level class input box, and setting the class input box information of the LED crystal grains, of which the performances meet the preset conditions, in the sorting drawing file, in the wafer as a third-level class input box.
It should be noted that, since the preset LED dies in the wafer are the LED dies located outside the first boundary line in the wafer, and the LED dies located outside the first boundary line in the wafer are all the LED dies whose performances do not satisfy the preset condition, the LED dies whose performances do not satisfy the preset condition except the preset LED dies in the wafer are the LED dies located on the first boundary line in the wafer and the LED dies whose performances do not satisfy the preset condition inside the first boundary line in the wafer, based on the performance information of each LED die in the sorting map file, the category input box information of the LED dies whose performances do not satisfy the preset condition except the preset LED dies in the wafer in the sorting map file is set as the second category input box, that is, the LED dies located on the first boundary line in the wafer, and the information of the class input box of the LED crystal grains with the performance not meeting the preset condition in the wafer, which are positioned within the first boundary line, in the sorting graph file is set as a second class input box, such as Bin 150.
And the type input box information of the LED crystal grains with the performance not meeting the preset condition in the wafer in the sorting graph file is set, and the type input box information of the LED crystal grains with the performance not meeting the preset condition in the wafer, which are positioned on the first boundary line, and the type input box information of the LED crystal grains with the performance not meeting the preset condition in the sorting graph file, which are positioned in the wafer, are different from the type input box information of the LED crystal grains with the performance not meeting the preset condition in the sorting graph file.
It should be further noted that, based on the performance information of each LED die in the sorting map file, the category input box information of the LED die in the sorting map file, whose performance meets the preset condition, in the wafer is set as a third-level category input box, for example, as Bin 1.
S44: and selecting preset LED crystal grains from the wafer according to the type input box information of each LED crystal grain in the selection drawing file.
Specifically, in an embodiment of the present application, as shown in fig. 7, the sorting out the preset LED dies from the wafer according to the category input box information of each LED die in the sorting drawing file includes:
s441: and setting the sorting condition of a sorting machine according to the information of the category input box of each LED crystal grain in the sorting drawing file, wherein the sorting condition is that only the LED crystal grains of the second-level category input box are sorted from the category input box information in the sorting drawing file in the wafer.
S442: based on the sorting conditions, LED crystal grains on the first boundary line in the wafer and LED crystal grains with performance not meeting the preset conditions within the first boundary line in the wafer are sorted out by using a sorting machine, and traces of the first boundary line are obtained in the wafer.
It should be noted that the LED dies in the wafer whose performance meets the preset condition are not desired to be sorted by the sorting machine, and the preset LED dies in the wafer (i.e. the LED dies in the wafer outside the first boundary line) can be quickly scraped by the subsequent edge scraping operation, so according to the information of the category input box of each LED die in the sorting drawing file, the sorting condition of the sorting machine is set to only sort the LED dies in the sorting drawing file in the wafer as the LED dies of the second category input box, i.e. only sort the LED dies in the wafer on the first boundary line, and the LED dies in the wafer within the first boundary line whose performance does not meet the preset condition, so that the sorting machine is used to sort the LED dies in the wafer on the first boundary line based on the sorting condition, and sorting the LED crystal grains with the performance not meeting the preset condition within the first boundary line in the wafer, and obtaining the trace of the first boundary line in the wafer.
Specifically, in an embodiment of the present application, in S42, based on the position information of the preset LED dies in the wafer, the category input box information of the preset LED dies in the wafer in the sorting drawing file is set as Bin 0; in S43, based on the performance information of each LED die in the sorting map file, the category input box information in the sorting map file of the LED die, except the preset LED die, of which the performance does not satisfy the preset condition in the wafer is set as Bin150, the category input box information in the sorting map file of the LED die, of which the performance satisfies the preset condition, in the wafer is set as Bin1, namely, the class input box information of the LED dies in the wafer outside the first boundary line in the sorting map file is Bin0, the information of the category input box of the LED crystal grains on the first boundary line and the LED crystal grains with the performance not meeting the preset condition in the sorting drawing file in the wafer is Bin150, the information of the class input box of the LED crystal grains with the performance meeting the preset condition in the wafer in the sorting drawing file is Bin 1; in S441, a sorting condition of a sorting machine is set according to the category input box information of each LED die in the sorting drawing, where the sorting condition is to sort only the LED die of which the category input box information in the sorting drawing in the wafer is Bin 150; in S442, based on the sorting condition, the LED dies on the first boundary line in the wafer and the LED dies with performance not meeting the preset condition within the first boundary line in the wafer are sorted by using a sorting machine, and traces of the first boundary line are obtained in the wafer.
Fig. 8 shows a schematic diagram after the LED dies on the first boundary line in the wafer and the LED dies with performance not meeting the preset condition within the first boundary line in the wafer are sorted out, as shown in fig. 8, the irregular white circle 21 in the edge area of the wafer is the trace of the first boundary line, and the white areas 81 with some irregular shapes within the irregular white circle 21 are the trace of the LED dies with performance not meeting the preset condition within the first boundary line in the wafer.
S443: and scraping the preset LED crystal grains in the wafer according to the trace of the first boundary line.
It should be noted that, because the first boundary line includes at least one circle of LED dies, traces of the first boundary line become boundary traces of LED dies in the wafer, whose performance does not satisfy the preset condition, located outside the first boundary line, and LED dies in the wafer, located inside the first boundary line, so that an operator can scrape off LED dies in the wafer, whose performance does not satisfy the preset condition, located outside the first boundary line (i.e., the preset LED dies) according to the traces of the first boundary line, thereby effectively reducing missing scraping and multiple scraping, and improving product yield.
In order to prevent the LED dies with the performance not meeting the preset condition in the wafer from being missed by the sorting machine and improve the sorting accuracy, on the basis of the foregoing embodiment, in an embodiment of the present application, as shown in fig. 9, the method further includes:
s5: and after scraping the preset LED crystal grains in the wafer, carrying out missed selection inspection on the LED crystal grains in the wafer based on the performance information of the LED crystal grains in the selection graph file, and if the LED crystal grains which do not meet the preset conditions still exist in the wafer, continuously selecting the LED crystal grains which do not meet the preset conditions until all the LED crystal grains which do not meet the preset conditions in the wafer are selected.
On the basis of the above embodiment, in an embodiment of the present application, as shown in fig. 10, the method further includes:
s6: and performing appearance inspection on each LED crystal grain which meets the preset condition in the wafer so as to prevent the LED crystal grains which have defects in appearance from flowing out although the performance of the wafer meets the preset condition.
In summary, the method for sorting the LED dies in the wafer provided by the embodiment of the present application includes: scanning and testing the LED crystal grains in the wafer to generate a first test drawing file containing the position information and the performance information of each LED crystal grain; deleting the position information of the LED crystal grains outside the first boundary line in the wafer in the first test drawing file according to the performance information of each LED crystal grain in the first test drawing file to obtain a second test drawing file, wherein the performances of the LED crystal grains outside the first boundary line and the first boundary line in the wafer do not meet preset conditions, the performances of at least part of the LED crystal grains within the first boundary line in the wafer meet the preset conditions, and the first boundary line comprises at least one circle of LED crystal grains; separating and scanning each LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain; based on the position information of each LED crystal grain in the second test drawing file and the position information of each LED crystal grain in the scanning drawing file, selecting preset LED crystal grains from the wafer; the position information of the preset LED crystal grains is contained in the scanning image file and is not contained in the second testing image file, so that a large number of LED crystal grains which are positioned outside the first boundary line and have performance not meeting the preset condition in the wafer can be efficiently sorted, and the sorting efficiency is improved.
In addition, the sorting method provided by the embodiment of the application cancels the ink dispensing process, so that the yield loss caused by ink overflow is avoided, the condition that the ink dots shield the electrodes, the light emitting areas and other characteristics of the LED crystal grains is avoided, the recognition capability of the sorting machine for the LED crystal grains with the performance not meeting the preset condition in the wafer is further improved, the picking missing rate of the sorting machine is reduced, the risk of the LED crystal grains with the performance not meeting the preset condition in the wafer flowing out is reduced, and the working efficiency is improved.
All parts in the specification are described in a mode of combining parallel and progressive, each part is mainly described to be different from other parts, and the same and similar parts among all parts can be referred to each other.
In the above description of the disclosed embodiments, features described in various embodiments in this specification can be substituted for or combined with each other to enable those skilled in the art to make or use the present application. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the application. Thus, the present application is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.

Claims (7)

1. A method for sorting LED crystal grains in a wafer is characterized by comprising the following steps:
scanning and testing the LED crystal grains in the wafer to generate a first test drawing file containing the position information and the performance information of each LED crystal grain;
deleting the position information of the LED crystal grains outside the first boundary line in the wafer in the first test drawing file according to the performance information of each LED crystal grain in the first test drawing file to obtain a second test drawing file, wherein the performances of the LED crystal grains outside the first boundary line and the first boundary line in the wafer do not meet preset conditions, the performances of at least part of the LED crystal grains within the first boundary line in the wafer meet the preset conditions, and the first boundary line comprises at least one circle of LED crystal grains;
separating and scanning each LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain;
based on the position information of each LED crystal grain in the second test drawing file and the position information of each LED crystal grain in the scanning drawing file, selecting preset LED crystal grains from the wafer;
wherein the position information of the predetermined LED die is included in the scan drawing file and is not included in the second test drawing file.
2. The method of claim 1, wherein the separating and scanning each LED die in the wafer, and the generating of the scanning map file containing the position information of each separated LED die comprises:
carrying out cutting, splitting and film expanding treatment on the wafer, and separating each LED crystal grain in the wafer;
and scanning each separated LED crystal grain in the wafer to generate a scanning image file containing the position information of each separated LED crystal grain.
3. The method of claim 1, wherein selecting a predetermined LED die from the wafer based on the position information of each LED die in the second test drawing file and the position information of each LED die in the scan drawing file comprises:
combining the second test image file and the scanning image file based on the relative position of each LED crystal grain in the wafer to form a sorting image file, and screening out the position information of the preset LED crystal grain in the wafer in the combining process;
setting the type input box information of the preset LED crystal grains in the wafer in the sorting drawing file as a first-level type input box based on the position information of the preset LED crystal grains in the wafer;
based on the performance information of each LED crystal grain in the sorting drawing file, setting the class input box information of the LED crystal grains, except the preset LED crystal grains, of which the performances do not meet the preset conditions in the wafer, in the sorting drawing file as a second-level class input box, and setting the class input box information of the LED crystal grains, of which the performances meet the preset conditions, in the wafer, in the sorting drawing file as a third-level class input box;
and selecting preset LED crystal grains from the wafer according to the type input box information of each LED crystal grain in the selection drawing file.
4. The method of claim 3, wherein sorting predetermined LED dies from the wafer according to the category input box information of each LED die in the sorting map file comprises:
setting the sorting condition of a sorting machine according to the information of the category input box of each LED crystal grain in the sorting drawing file, wherein the sorting condition is that only the LED crystal grains of which the information of the category input box in the sorting drawing file is the second-level category input box in the wafer are sorted;
based on the sorting conditions, sorting the LED crystal grains on the first boundary line in the wafer and the LED crystal grains with the performance not meeting the preset conditions within the first boundary line in the wafer by using a sorting machine, and obtaining traces of the first boundary line in the wafer;
and scraping the preset LED crystal grains in the wafer according to the trace of the first boundary line.
5. The method of claim 4, further comprising:
and after scraping the preset LED crystal grains in the wafer, carrying out missed selection inspection on the LED crystal grains in the wafer based on the performance information of the LED crystal grains in the selection graph file, and if the LED crystal grains which do not meet the preset conditions still exist in the wafer, continuously selecting the LED crystal grains which do not meet the preset conditions until all the LED crystal grains which do not meet the preset conditions in the wafer are selected.
6. The method of claim 5, further comprising:
and performing appearance inspection on each LED crystal grain with the performance meeting the preset condition in the wafer.
7. The method of claim 1, wherein the LED die performance information comprises: the LED crystal grain has at least one of wavelength, luminous intensity, starting voltage, electric leakage, electrostatic capacity and working voltage.
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