CN113139279A - Silicon-based liquid crystal panel and design method and preparation method thereof - Google Patents
Silicon-based liquid crystal panel and design method and preparation method thereof Download PDFInfo
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- CN113139279A CN113139279A CN202110393513.3A CN202110393513A CN113139279A CN 113139279 A CN113139279 A CN 113139279A CN 202110393513 A CN202110393513 A CN 202110393513A CN 113139279 A CN113139279 A CN 113139279A
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- 239000004973 liquid crystal related substance Substances 0.000 title claims abstract description 201
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 166
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 166
- 239000010703 silicon Substances 0.000 title claims abstract description 166
- 238000000034 method Methods 0.000 title claims abstract description 50
- 238000013461 design Methods 0.000 title claims abstract description 49
- 238000002360 preparation method Methods 0.000 title abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 145
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- 238000002310 reflectometry Methods 0.000 claims description 26
- 238000002834 transmittance Methods 0.000 claims description 18
- 210000002858 crystal cell Anatomy 0.000 claims description 17
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 16
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 14
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 14
- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 claims description 14
- 229910001936 tantalum oxide Inorganic materials 0.000 claims description 14
- 239000011521 glass Substances 0.000 claims description 13
- 238000012360 testing method Methods 0.000 claims description 13
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 12
- 229910052746 lanthanum Inorganic materials 0.000 claims description 12
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 12
- ORUIBWPALBXDOA-UHFFFAOYSA-L magnesium fluoride Chemical compound [F-].[F-].[Mg+2] ORUIBWPALBXDOA-UHFFFAOYSA-L 0.000 claims description 12
- 229910001635 magnesium fluoride Inorganic materials 0.000 claims description 12
- 229910000484 niobium oxide Inorganic materials 0.000 claims description 12
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 claims description 12
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 12
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 12
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims description 12
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims description 12
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- 238000007789 sealing Methods 0.000 claims description 8
- 239000011248 coating agent Substances 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- OYLGJCQECKOTOL-UHFFFAOYSA-L barium fluoride Chemical compound [F-].[F-].[Ba+2] OYLGJCQECKOTOL-UHFFFAOYSA-L 0.000 claims description 6
- 229910001632 barium fluoride Inorganic materials 0.000 claims description 6
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 claims description 6
- 229910001634 calcium fluoride Inorganic materials 0.000 claims description 6
- QCCDYNYSHILRDG-UHFFFAOYSA-K cerium(3+);trifluoride Chemical compound [F-].[F-].[F-].[Ce+3] QCCDYNYSHILRDG-UHFFFAOYSA-K 0.000 claims description 6
- 229910001610 cryolite Inorganic materials 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- BYMUNNMMXKDFEZ-UHFFFAOYSA-K trifluorolanthanum Chemical compound F[La](F)F BYMUNNMMXKDFEZ-UHFFFAOYSA-K 0.000 claims description 6
- 229940105963 yttrium fluoride Drugs 0.000 claims description 6
- RBORBHYCVONNJH-UHFFFAOYSA-K yttrium(iii) fluoride Chemical compound F[Y](F)F RBORBHYCVONNJH-UHFFFAOYSA-K 0.000 claims description 6
- 239000011247 coating layer Substances 0.000 claims description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
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- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
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- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F30/00—Computer-aided design [CAD]
- G06F30/20—Design optimisation, verification or simulation
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
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- Theoretical Computer Science (AREA)
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- Optics & Photonics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Chemical & Material Sciences (AREA)
- Computer Hardware Design (AREA)
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Abstract
The invention relates to a silicon-based liquid crystal panel and a design method and a preparation method thereof, by obtaining the target index of the silicon-based liquid crystal panel, respectively designing an upper substrate, a lower substrate and a liquid crystal box of the silicon-based liquid crystal panel in a mode of decomposing the target index, and finally forming an antireflection film on the upper substrate by evaporation, and a high-reflection film is formed on the lower substrate by vapor deposition, so that the light utilization rate of the silicon-based liquid crystal panel is comprehensively and effectively improved, thereby improving the light utilization rate of the product using the silicon-based liquid crystal panel, being beneficial to enhancing the application range of the silicon-based liquid crystal panel, the preparation method of the silicon-based liquid crystal panel carries out film coating treatment before the silicon substrate is packaged, does not need to change the structure of the existing silicon substrate, has simple preparation method and easy realization, and is beneficial to obtaining the silicon-based liquid crystal panel with higher light utilization rate by adopting lower production cost.
Description
Technical Field
The invention relates to the technical field of silicon-based liquid crystal panel manufacturing, in particular to a silicon-based liquid crystal panel and a design method and a preparation method thereof.
Background
The light utilization rate of the existing LCOS wafer substrate (silicon substrate) is lower and is 70% -95%. The upper substrate of the existing silicon-based liquid crystal panel is mainly made of ITO glass, the different transmittances of the ITO glass caused by the different thicknesses and the ITO materials on the ITO glass are different, and the transmittance is mainly between 75% and 90%; the lower substrate of the silicon-based liquid crystal panel is mainly a silicon wafer, the reflectivity is inconsistent due to the difference between a CMOS circuit on the silicon wafer and a reflective aluminum layer, and is mainly between 70% and 95%, and comprehensively, the light utilization rate of the existing silicon-based liquid crystal panel is between 50% and 85%, and the difference is large. The light utilization rate of the existing LCOS panel is influenced by the size of pixel and the pixel gap on the silicon substrate, but is mainly limited by the manufacturing process capability of the silicon substrate and the capital pressure for developing the mask plate,
that is, the conventional liquid crystal on silicon panel has insufficient capability of manufacturing a silicon substrate and high manufacturing cost, and thus a liquid crystal on silicon panel with high light utilization rate cannot be obtained while high production cost is required. In addition, the conventional LCOS panel has a low light utilization rate and a limited corresponding application range. With the increase of the use requirements of users, the light utilization rate requirements of the liquid crystal on silicon panels and the micro-display products using the liquid crystal on silicon are also increased, so that the improvement of the light utilization rate of the liquid crystal on silicon substrates is urgent.
Disclosure of Invention
An object of the present invention is to provide a liquid crystal on silicon panel, a method for designing the same, and a method for manufacturing the same, wherein the method for designing the liquid crystal on silicon panel is simple, easy to implement, and low in cost, and can effectively improve the light utilization of the liquid crystal on silicon panel.
The invention discloses a design method of a silicon-based liquid crystal panel on one hand, which comprises the following steps:
s1, obtaining the target index of the liquid crystal on silicon panel;
s2, decomposing the target index; and
and S3, respectively designing an upper substrate, a lower substrate, a dielectric layer and a liquid crystal box of the silicon-based liquid crystal panel based on the decomposed target indexes.
In an embodiment of the invention, in the step S2, the target index is decomposed into an upper substrate index, a lower substrate index, a dielectric layer index and a liquid crystal cell index of the lcos panel.
In an embodiment of the invention, in the step S3, the dielectric layer includes an antireflection film and a high-reflection film, the antireflection film is disposed on the upper substrate, the high-reflection film is disposed on the lower substrate, and an antireflection film design, a liquid crystal cell design and a high-reflection film design of the lower substrate are respectively performed based on the upper substrate index, the lower substrate index, the dielectric layer index and the liquid crystal cell index, where the liquid crystal cell design includes a liquid crystal layer, alignment layers disposed on two sides of the liquid crystal layer, and material selection and relative position design of electrode layers.
In an embodiment of the present invention, the step S3 includes the steps of:
s31, respectively selecting corresponding antireflection film materials and high-reflection film materials based on the antireflection film system design of the upper substrate and the high-reflection film system design of the lower substrate of the silicon-based liquid crystal panel; and
and S32, respectively adjusting the film forming thickness and/or compactness of the anti-reflection film of the upper substrate and the film forming thickness and/or compactness of the high-reflection film of the lower substrate according to the corresponding characteristics of the selected anti-reflection film material and the selected high-reflection film material to obtain the target silicon-based liquid crystal panel.
In an embodiment of the present invention, the method for designing a liquid crystal on silicon panel further includes:
s4, performing index test on the obtained target silicon-based liquid crystal panel to obtain a test result; and
and S5, comparing the test result with the target index, and correcting and optimizing the design of the upper substrate, the lower substrate, the liquid crystal box and the dielectric layer of the target silicon-based liquid crystal panel based on the comparison result of the test result and the target index.
In an embodiment of the invention, the target index of the LCOS panel includes one or more of a usage wavelength band, a light utilization rate, a refractive index, a transmittance and a reflectance.
In an embodiment of the present invention, the antireflection film material includes one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, magnesium fluoride, cerium fluoride, cryolite, calcium fluoride, lanthanum fluoride, yttrium fluoride, and barium fluoride, and the high-reflectivity film material includes one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, and magnesium fluoride.
The invention also provides a preparation method of the silicon-based liquid crystal panel, which comprises the following steps:
respectively evaporating and plating an antireflection film on two opposite surfaces of the ITO glass plate to form an upper substrate;
forming a high-reflection film on one surface of the silicon substrate, which is provided with the CMOS circuit, by evaporation so as to form a lower substrate; and
and respectively connecting the upper substrate and the lower substrate to two opposite sides of a liquid crystal box in a sealing manner to form the silicon-based liquid crystal panel.
In an embodiment of the present invention, the antireflection film material includes one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, magnesium fluoride, cerium fluoride, cryolite, calcium fluoride, lanthanum fluoride, yttrium fluoride, and barium fluoride, and the high-reflectivity film material includes one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, and magnesium fluoride.
In an embodiment of the present invention, the antireflection film is formed by alternately coating silicon monoxide and silicon dioxide, and the range of the number of alternately coated layers is as follows: 4 ~ 6 layers, the thickness scope is: 4-6 nm, and the evaporation rate range is as follows: 0.2 to 0.8 nm/s.
In an embodiment of the present invention, the high-reflectivity film is formed by alternately coating tantalum oxide and silicon oxide or hafnium oxide and silicon oxide, and the number of the alternately coating layers is in the range: 10-40 layers with a thickness range of 1-3 μm and an evaporation speed range of: 0.2 to 4 nm/s.
The invention also provides a silicon-based liquid crystal panel, which is prepared by the preparation method of the silicon-based liquid crystal panel, the silicon-based liquid crystal panel comprises a liquid crystal box, an upper substrate and a lower substrate, the upper substrate and the lower substrate are arranged on two sides of the liquid crystal box, the liquid crystal box comprises a liquid crystal layer and orientation layers respectively arranged on two sides of the liquid crystal layer, the upper substrate comprises an antireflection film, an ITO (indium tin oxide) electrode, a glass plate and an antireflection film which are sequentially arranged along the direction far away from the liquid crystal box, and the lower substrate comprises a high reflection film, a CMOS (complementary metal oxide semiconductor) circuit and a silicon substrate which are sequentially arranged along the direction far away from the liquid crystal box.
The invention provides a silicon-based liquid crystal panel and a design method and a preparation method thereof, firstly, target indexes of the silicon-based liquid crystal panel are obtained, such as the use wave band and the light utilization rate requirement of the silicon-based liquid crystal panel, the refractive index and the transmittance of a glass plate, the reflectivity of a silicon substrate and related physical properties of liquid crystal, and whether special optical requirements or cautions exist or not is confirmed; secondly, decomposing the target index based on the requirement of the target index, respectively designing an upper substrate, a lower substrate and a liquid crystal box of the silicon-based liquid crystal panel based on the decomposed target index, and finally, comprehensively realizing that the existing light utilization rate of the silicon-based liquid crystal panel is effectively increased to 75% -98% by a mode of forming an antireflection film on the upper substrate by evaporation and forming a high-reflection film on the lower substrate by evaporation, so that the light utilization rate of a micro-display product (a product using the silicon-based liquid crystal panel) is increased, the application range of the silicon-based liquid crystal panel is favorably expanded, the competitiveness of a corresponding product using the silicon-based liquid crystal panel is increased, and the silicon-based liquid crystal panel has wide economic value.
In addition, the preparation method of the silicon-based liquid crystal panel carries out film coating treatment before the silicon substrate is packaged, the structure of the existing silicon substrate is not required to be changed, the preparation method is simple and easy to realize, and the silicon-based liquid crystal panel with higher light utilization rate can be obtained by adopting lower production cost.
Further objects and advantages of the invention will be fully apparent from the ensuing description and drawings.
Drawings
FIG. 1 is a block diagram of a method for designing LCOS panels according to a preferred embodiment of the present invention.
Fig. 2 is a schematic flow chart of the method for designing the liquid crystal on silicon panel shown in fig. 1.
FIG. 3 is a schematic flow chart of designing and correcting a high-reflectivity film system in the method for designing a LCOS panel shown in FIG. 1.
Fig. 4 is a flow chart illustrating a method for manufacturing a liquid crystal on silicon panel according to the above preferred embodiment of the present invention.
Fig. 5 is a block diagram of an antireflection film material and a high-reflection film material of a liquid crystal on silicon panel according to the above preferred embodiment of the present invention.
FIG. 6 is a reflectivity diagram of an LCOS panel according to the above preferred embodiment of the present invention.
FIG. 7 is a graph showing transmittance characteristics of LCOS panels according to the above preferred embodiments of the present invention.
Detailed Description
The following description is presented to disclose the invention so as to enable any person skilled in the art to practice the invention. The preferred embodiments in the following description are given by way of example only, and other obvious variations will occur to those skilled in the art. The basic principles of the invention, as defined in the following description, may be applied to other embodiments, variations, modifications, equivalents, and other technical solutions without departing from the spirit and scope of the invention.
It will be understood by those skilled in the art that in the present disclosure, the terms "vertical," "lateral," "up," "down," "front," "back," "left," "right," "vertical," "horizontal," "top," "bottom," "inner," "outer," and the like are used in the orientation or positional relationship indicated in the drawings for ease of description and simplicity of description, and do not indicate or imply that the referenced device or element must have a particular orientation, be constructed and operated in a particular orientation, and thus, the above terms should not be construed as limiting the present invention.
It is understood that the terms "a" and "an" should be interpreted as meaning that a number of one element or element is one in one embodiment, while a number of other elements is one in another embodiment, and the terms "a" and "an" should not be interpreted as limiting the number.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
As shown in fig. 1 to 7, a detailed structure of a liquid crystal on silicon panel according to the present invention, a design method thereof, and a fabrication method thereof are illustrated.
It is worth mentioning that since few enterprises capable of designing and producing the silicon-based panel are available in China, most enterprises directly buy the substrate for direct application, so that design and production units are rarely required to make corresponding adjustments, and due to different product application scenarios, the performance requirements of the silicon-based liquid crystal panel are different, so that a method for designing the silicon-based liquid crystal panel based on the performance requirements of the silicon-based liquid crystal panel is lacked at present. Based on this, as shown in fig. 1, the present invention provides a method for designing a liquid crystal on silicon panel in one aspect, comprising the steps of:
s1, obtaining the target index of the liquid crystal on silicon panel;
s2, decomposing the target index; and
and S3, respectively designing an upper substrate, a lower substrate, a dielectric layer and a liquid crystal box of the silicon-based liquid crystal panel based on the decomposed target indexes.
In particular, the target index of the LCOS panel comprises one or more of a use wavelength band, a light utilization rate, a refractive index, a transmittance and a reflectivity.
It can be understood that, in the method for designing the liquid crystal on silicon panel, the optical performance of the finally obtained liquid crystal on silicon panel can be predicted by firstly obtaining the target index, which is beneficial to purposefully producing the target liquid crystal on silicon panel and shortening the production and research and development period of the target liquid crystal on silicon panel, thereby reducing the production cost of the target liquid crystal on silicon panel.
Specifically, in step S2, the target index is decomposed into an upper substrate index, a lower substrate index, a dielectric layer index, and a liquid crystal cell index of the liquid crystal on silicon panel.
It is worth mentioning that, in the step S3, the dielectric layer includes an antireflection film and a high-reflection film, the antireflection film is disposed on the upper substrate, the high-reflection film is disposed on the lower substrate, and the antireflection film design, the liquid crystal cell design, and the high-reflection film design of the lower substrate are respectively performed based on the upper substrate index, the lower substrate index, the dielectric layer index, and the liquid crystal cell index, that is, the target index is decomposed into individual components of the liquid crystal on silicon panel, so as to comprehensively improve the light utilization rate of the liquid crystal on silicon panel.
It can be understood that the improvement of the light utilization rate of the liquid crystal on silicon panel is easier to realize by decomposing the target index, and the improvement of the light utilization rate of the liquid crystal on silicon panel is realized by mainly adopting a mode of improving the performances of the upper substrate and the lower substrate by the dielectric layer, without changing the structure of the glass plate of the upper substrate and the structure of the silicon substrate of the lower substrate, the improvement can be carried out before the silicon substrate is packaged, so that the preparation of the liquid crystal on silicon panel is simpler and easier to realize.
It is also worth mentioning that the liquid crystal cell design includes a liquid crystal layer, alignment layers disposed on both sides of the liquid crystal layer, and a design of material selection and relative positions of electrode layers.
Specifically, the step S3 includes the steps of:
s31, respectively selecting corresponding antireflection film materials and high-reflection film materials based on the antireflection film system design of the upper substrate and the high-reflection film system design of the lower substrate of the silicon-based liquid crystal panel; and
and S32, respectively adjusting the film forming thickness and/or compactness of the anti-reflection film of the upper substrate and the film forming thickness and/or compactness of the high-reflection film of the lower substrate according to the corresponding characteristics of the selected anti-reflection film material and the selected high-reflection film material to obtain the target silicon-based liquid crystal panel.
It should be understood that, in the step S3, when performing the anti-reflection film system design of the upper substrate and the high-reflection film system design of the lower substrate of the liquid crystal on silicon panel, it is necessary to consider whether the optical properties of the selected material satisfy the refractive index, anisotropy, absorption, scattering, optical stability, etc. required by the target liquid crystal on silicon panel, and whether the mechanical properties of the selected material satisfy the hardness, adhesion, stress, etc. required by the target liquid crystal on silicon panel.
It is worth mentioning that the antireflection film material includes one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, magnesium fluoride, cerium fluoride, cryolite, calcium fluoride, lanthanum fluoride, yttrium fluoride, and barium fluoride, and the high-reflectivity film material includes one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, and magnesium fluoride.
Specifically, in one embodiment of the present invention, the antireflection film is alternatively coated with two materials (e.g., SiO/SiO)2) Forming a high-reflective film of two of the listed materials (e.g., Ta)2O5/SiO2、HfO2/SiO2) Forming, wherein the materials of the antireflection film and the high-reflection film coating are selectedThe selection can be correspondingly adjusted according to the actual design process, and the film forming thickness and/or compactness of the antireflection film and the high-reflection film can be adjusted by adjusting the selection of film coating materials, the number of film coating layers, the film coating thickness and the evaporation rate.
Further, the method for designing the LCOS panel further comprises the steps of:
s4, performing index test on the obtained target silicon-based liquid crystal panel to obtain a test result; and
and S5, comparing the test result with the target index, and correcting and optimizing the design of the upper substrate, the lower substrate, the liquid crystal box and the dielectric layer of the target silicon-based liquid crystal panel based on the comparison result of the test result and the target index.
That is to say, in the method for designing the liquid crystal on silicon panel, the steps of correcting and optimizing the anti-reflection film system design of the upper substrate and the high-reflection film system design of the lower substrate are also performed, which is beneficial to enabling the test index of the target liquid crystal on silicon panel to be close to or equal to the target index, and achieving the target requirement of the target liquid crystal on silicon panel.
Referring to fig. 2 and 3, the method for designing the lcos panel of the present invention will be further described with reference to the following embodiments.
As shown in fig. 2, firstly, the present invention first knows the requirements of the target lcos panel, i.e. obtains the target indexes, such as the use wavelength band, the light utilization requirement, the refractive index and transmittance of the glass plate, the reflectivity of the silicon substrate and the liquid crystal correlation of the target lcos panel, and simultaneously determines whether there are special optical requirements or cautions; and decomposing the target index according to the requirement, specifically, decomposing the target index into indexes corresponding to upper and lower substrates of the target silicon-based liquid crystal panel, indexes corresponding to materials in the liquid crystal box and indexes of a medium layer, and designing each module based on the decomposed indexes.
As shown in fig. 3, for example, when the high reflective film design of the lower substrate is taken as an example, when the requirement of the target silicon-based liquid crystal panel is a requirement of an applicable waveband and a requirement of a reflectivity, a corresponding material is selected according to the requirement of the applicable waveband, the metal reflector of the lower substrate is designed according to the requirement of the reflectivity, when the reflectivity meets a target index, the high reflective film design of the lower substrate is completed, when the reflectivity does not meet the target index, the high reflective film design of the lower substrate is corrected and optimized, until the reflectivity meets the target index, the high reflective film design of the lower substrate is completed, otherwise, the process of the high reflective film design of the lower substrate is repeated. The modification and optimization in this process may be specifically implemented as adjustment of the film formation thickness and/or the density of the high-reflection film of the lower substrate, and the present invention is not limited thereto.
It is worth mentioning that according to the target requirement, when the upper substrate antireflection film and the lower substrate high-reflection film are designed, corresponding wave bands can be set, unnecessary stray light is filtered out in advance, and the interference to the performance of the silicon-based liquid crystal panel is prevented.
It should be understood that the process of modifying and optimizing the antireflection coating system design of the upper substrate is similar to the process of modifying and optimizing the high antireflection coating system design of the lower substrate. That is, in the process of designing the antireflection film system of the upper substrate, when the transmittance satisfies the target index, the antireflection film system design is completed, and when the transmittance does not satisfy the target index, the process of designing the antireflection film system of the upper substrate is repeated until the transmittance satisfies the target index, and the antireflection film system design of the upper substrate is finished, so that the final target silicon-based liquid crystal panel is obtained.
As shown in fig. 4, in another aspect, the present invention further provides a method for manufacturing a liquid crystal on silicon panel, including the steps of:
respectively evaporating and plating an antireflection film on two opposite surfaces of the ITO glass plate to form an upper substrate;
forming a high-reflection film on one surface of the silicon substrate, which is provided with the CMOS circuit, by evaporation so as to form a lower substrate; and
and respectively connecting the upper substrate and the lower substrate to two opposite sides of a liquid crystal box in a sealing manner to form the silicon-based liquid crystal panel.
It can be understood that the method for manufacturing the liquid crystal on silicon panel is performed based on a design method of the liquid crystal on silicon panel. The invention mainly improves the light utilization rate of the silicon-based liquid crystal panel through two parts, namely evaporating the antireflection film on the upper substrate to improve the transmittance of the silicon-based liquid crystal panel and evaporating the high-reflection film on the lower substrate to improve the reflectivity of the silicon-based liquid crystal panel, thereby comprehensively improving the light utilization rate of the silicon-based liquid crystal panel. The evaporation steps of the upper substrate and the lower substrate may be performed simultaneously, and the present invention does not limit the order of the above steps.
It should also be understood that, during the preparation of the liquid crystal on silicon panel, the film formation thickness and/or compactness of the anti-reflection film of the upper substrate and the film formation thickness and/or compactness of the high-reflection film of the lower substrate may be adjusted to meet the target specification of the liquid crystal on silicon panel.
It should be mentioned that the method for preparing the silicon-based liquid crystal panel further comprises the steps of: and respectively arranging an orientation layer on one corresponding surface of the upper substrate and the lower substrate, connecting the orientation layer of the upper substrate to the liquid crystal molecular layer in a sealing manner, connecting the orientation layer of the lower substrate to the liquid crystal molecular layer in a sealing manner, and forming a state that the upper substrate and the lower substrate are respectively connected to two opposite sides of a liquid crystal box in a sealing manner, thereby obtaining the silicon-based liquid crystal panel.
In addition, it is worth mentioning that the liquid crystal box, the upper substrate and the lower substrate are connected in a sealing manner through a sealing glue.
As shown in fig. 5, the material of the antireflection film is one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, magnesium fluoride, cerium fluoride, cryolite, calcium fluoride, lanthanum fluoride, yttrium fluoride, and barium fluoride, and the material of the high-reflection film is one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, and magnesium fluoride.
Specifically, in one embodiment of the present inventionWherein the antireflection film is alternately coated with two materials (e.g. SiO/SiO)2) Forming, wherein the range of the number of the alternately plated films is as follows: 4 ~ 6 layers, the thickness scope is: 4-6 nm, and the evaporation rate range is as follows: 0.2-0.8 nm/s to ensure the thickness and compactness of a formed film and improve the transmittance of the silicon-based liquid crystal panel, thereby ensuring the light utilization rate of the silicon-based liquid crystal panel, wherein the material selection of the antireflection film coating, the coating layer number and thickness and the evaporation rate can be correspondingly adjusted according to the actual design process.
Specifically, in one embodiment of the invention, the high-reflectivity film is alternately coated with two of the listed materials (e.g., Ta)2O5/SiO2、HfO2/SiO2) Forming, wherein the range of the number of the alternately plated films is as follows: 10-40 layers, the thickness range is 1-3 μm, preferably 2 μm, the evaporation speed range is: 0.2-4 nm/s to ensure the thickness and compactness of a formed film and improve the reflectivity of the silicon-based liquid crystal panel, thereby ensuring the light utilization rate of the silicon-based liquid crystal panel, wherein the material selection of the high-reflection film coating, the number and thickness of the coating layers and the evaporation rate can be correspondingly adjusted according to the actual design process.
It can be understood that the invention also provides a liquid crystal on silicon panel in another aspect, the liquid crystal on silicon panel is prepared by the preparation method of the liquid crystal on silicon panel, the liquid crystal on silicon panel comprises a liquid crystal box and an upper substrate and a lower substrate which are arranged on two sides of the liquid crystal box, the liquid crystal box comprises a liquid crystal layer and orientation layers which are respectively arranged on two sides of the liquid crystal layer, the upper substrate comprises an antireflection film, an ITO electrode, a glass plate and an antireflection film which are sequentially arranged along a direction far away from the liquid crystal box, and the lower substrate comprises a high-reflection film, a CMOS circuit and a silicon substrate which are sequentially arranged along a direction far away from the liquid crystal box.
As shown in fig. 6 and 7, the present invention also performs the characterization of reflectivity and the characterization of transmittance of the liquid crystal on silicon panel obtained by the design method and the preparation method of the liquid crystal on silicon panel.
Specifically, as shown in fig. 6, the conventional liquid crystal on silicon panel adopts an aluminum mirror as a reflector, and the liquid crystal on silicon panel of the present invention adopts a high-reflectivity film, and from the viewpoint of the overall reflectivity, the reflectivity of the liquid crystal on silicon panel of the present invention is 80% to 100%, and the reflectivity of the conventional liquid crystal on silicon panel is 82% to 92%, so that the liquid crystal on silicon panel of the present invention has a reflectivity range higher than that of the conventional liquid crystal on silicon panel, and particularly, within a wavelength band of 450nm to 600nm, the reflectivity of the liquid crystal on silicon panel of the present invention is much higher than that of the conventional liquid crystal on silicon panel.
As shown in fig. 7, the conventional liquid crystal on silicon panel uses ITO glass, the liquid crystal on silicon panel of the present invention uses a high transmittance film, and from the viewpoint of overall transmittance, the transmittance of the liquid crystal on silicon panel of the present invention is 79% to 98%, and the transmittance of the conventional liquid crystal on silicon panel is 80% to 90%.
In summary, the light utilization rate of the silicon-based liquid crystal panel obtained by the design method and the preparation method of the silicon-based liquid crystal panel is 75-98%, and the light utilization rate of the existing silicon-based liquid crystal panel is effectively improved.
It can be understood that the effect of light modulation can be maximally improved by improving the light utilization rate of the liquid crystal on silicon panel, and therefore the liquid crystal on silicon panel of the present invention is suitable for being applied to spatial light modulation devices, and the design method of the liquid crystal on silicon panel of the present invention can also be applied to related devices such as micro-display, micro-projection, 3D holography, maskless exposure, laser parallel processing, high damage threshold light modulation and control, and the present invention is not limited thereto.
In general, the present invention provides a liquid crystal on silicon panel and a method for designing and fabricating the same, respectively designing an upper substrate, a lower substrate and a liquid crystal box of the silicon-based liquid crystal panel in a mode of obtaining a target index of the silicon-based liquid crystal panel and decomposing the target index, and finally forming an antireflection film on the upper substrate by evaporation, and a high-reflection film is formed on the lower substrate by vapor deposition, so that the light utilization rate of the silicon-based liquid crystal panel is comprehensively and effectively improved, thereby improving the light utilization rate of the product using the silicon-based liquid crystal panel, being beneficial to enhancing the application range of the silicon-based liquid crystal panel, the preparation method of the silicon-based liquid crystal panel carries out film coating treatment before the silicon substrate is packaged, does not need to change the structure of the existing silicon substrate, has simple preparation method and easy realization, and is beneficial to obtaining the silicon-based liquid crystal panel with higher light utilization rate by adopting lower production cost.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, but should be considered as the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above examples only express preferred embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (12)
1. A method for designing a liquid crystal on silicon panel, comprising the steps of:
s1, obtaining the target index of the liquid crystal on silicon panel;
s2, decomposing the target index; and
and S3, respectively designing an upper substrate, a lower substrate, a dielectric layer and a liquid crystal box of the silicon-based liquid crystal panel based on the decomposed target indexes.
2. The method according to claim 1, wherein in step S2, the target index is decomposed into an upper substrate index, a lower substrate index, a dielectric layer index and a liquid crystal cell index of the lcos panel.
3. The method according to claim 2, wherein in step S3, the dielectric layer includes an antireflection film and a high-reflection film, the antireflection film is disposed on the upper substrate, the high-reflection film is disposed on the lower substrate, and based on the upper substrate index, the lower substrate index, the dielectric layer index and the liquid crystal cell index, an antireflection film system design, a liquid crystal cell design and a high-reflection film system design of the lower substrate are respectively performed, wherein the liquid crystal cell design includes a liquid crystal layer, alignment layers disposed on two sides of the liquid crystal layer, and material selection and relative position design of electrode layers.
4. The method according to claim 3, wherein the step S3 includes the steps of:
s31, respectively selecting corresponding antireflection film materials and high-reflection film materials based on the antireflection film system design of the upper substrate and the high-reflection film system design of the lower substrate of the silicon-based liquid crystal panel; and
and S32, respectively adjusting the film forming thickness and/or compactness of the anti-reflection film of the upper substrate and the film forming thickness and/or compactness of the high-reflection film of the lower substrate according to the corresponding characteristics of the selected anti-reflection film material and the selected high-reflection film material to obtain the target silicon-based liquid crystal panel.
5. The method of claim 4, wherein the method for designing LCOS panel further comprises:
s4, performing index test on the obtained target silicon-based liquid crystal panel to obtain a test result; and
and S5, comparing the test result with the target index, and correcting and optimizing the design of the upper substrate, the lower substrate, the liquid crystal box and the dielectric layer of the target silicon-based liquid crystal panel based on the comparison result of the test result and the target index.
6. The method according to any one of claims 1 to 5, wherein the target index of the LCOS panel comprises one or more of a wavelength band of use, a light utilization rate, a refractive index, a transmittance, and a reflectance.
7. The method of any one of claims 1-5, wherein the antireflective film material comprises one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, magnesium fluoride, cerium fluoride, cryolite, calcium fluoride, lanthanum fluoride, yttrium fluoride, barium fluoride, and wherein the high-reflectivity film material comprises one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, magnesium fluoride.
8. A method for manufacturing a liquid crystal on silicon panel based on the method for designing a liquid crystal on silicon panel of any one of claims 1 to 7, comprising the steps of:
respectively evaporating and plating an antireflection film on two opposite surfaces of the ITO glass plate to form an upper substrate;
forming a high-reflection film on one surface of the silicon substrate, which is provided with the CMOS circuit, by evaporation so as to form a lower substrate; and
and respectively connecting the upper substrate and the lower substrate to two opposite sides of a liquid crystal box in a sealing manner to form the silicon-based liquid crystal panel.
9. The method of claim 8, wherein the antireflective film material comprises one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, magnesium fluoride, cerium fluoride, cryolite, calcium fluoride, lanthanum fluoride, yttrium fluoride, and barium fluoride, and the high antireflective film material comprises one or more of tantalum oxide, titanium oxide, niobium oxide, hafnium oxide, zirconium oxide, lanthanum titanate, aluminum oxide, silicon oxide, and magnesium fluoride.
10. The method of claim 9, wherein the antireflection film is formed of alternating silicon monoxide and silicon dioxide coating films, and the number of the alternating coating films is in the range of: 4 ~ 6 layers, the thickness scope is: 4-6 nm, and the evaporation rate range is as follows: 0.2 to 0.8 nm/s.
11. The method of claim 9 or 10, wherein the high-reflection film is formed by alternately coating tantalum oxide and silicon oxide or hafnium oxide and silicon oxide, and the number of alternately coating layers is in the range of: 10-40 layers with a thickness range of 1-3 μm and an evaporation speed range of: 0.2 to 4 nm/s.
12. A liquid crystal on silicon panel, characterized in that the liquid crystal on silicon panel is prepared by the method according to any one of claims 8 to 11, the liquid crystal on silicon panel comprises a liquid crystal cell and an upper substrate and a lower substrate disposed at two sides of the liquid crystal cell, the liquid crystal cell comprises a liquid crystal layer and alignment layers disposed at two sides of the liquid crystal layer, the upper substrate comprises an antireflection film, an ITO electrode, a glass plate and an antireflection film sequentially disposed along a direction away from the liquid crystal cell, and the lower substrate comprises a high-reflection film, a CMOS circuit and a silicon substrate sequentially disposed along a direction away from the liquid crystal cell.
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