CN109856707B - Antireflection film with broadband and ultralow reflectivity - Google Patents
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Abstract
The invention discloses a broadband ultra-low reflectionThe antireflection film with the refractive index comprises a substrate and an antireflection film stack arranged on the substrate; the substrate is optical glass or optical plastic; the structural expression of the antireflection film stack is as follows: aM (b)iL/ciH/diM/eiL) n, where M represents an intermediate index film of 1/4 monitored wavelength thickness, L represents a low index film of 1/4 monitored wavelength thickness, H represents a high index film of 1/4 monitored wavelength thickness, and (b)iL/ciH/diM/eiL) represents the ith alternating unit, n represents the total number of alternating units, i is an integer and is more than or equal to 1 and less than or equal to n, and (b)iL/ciH/diM/eiL) ^ n represents that n alternate units are stacked in sequence, a, bi、ci、di、eiThe coefficients are represented. The antireflection film disclosed by the invention has ultralow residual reflectivity in a wider waveband range, can effectively reduce residual reflection on the surface of an optical element and improve the transmittance of the optical element, thereby reducing or even eliminating the glare phenomenon in an optical lens and enhancing the imaging definition.
Description
Technical Field
The invention belongs to the technical field of antireflection films, and particularly relates to an antireflection film with a wide waveband and ultra-low reflectivity.
Background
Modern optical devices, such as lenses for cameras and monitors, periscopes for submarines, etc., are composed of a number of optical elements, such as lenses, prisms, etc. In general, although the number of lens pieces constituting the optical system is large, it is good to eliminate aberrations, and the imaging quality is high. However, since the mirror surface reflects light, the more the mirror surface is, the more light loss is made and the less light flux is made.
In addition, the higher the reflectivity of the lens to incident light, the higher the energy of reflected light inside the lens, and the larger the light energy reaching the image plane in the form of stray light after multiple reflections and refractions, thereby reducing the definition and contrast of the image, causing the texture and level of the image to feel loss, even causing the phenomenon of glare, and seriously reducing the image quality. The surface of the optical element is plated with a proper antireflection film, so that the transmission performance of the optical element can be obviously improved, the reflected light inside the lens is reduced, and the imaging quality of the lens is improved.
Assuming that there are 8 lenses in an optical system, the transmittance of a single lens is 92% when uncoated, and the transmittance of the optical system is (92%)851.32%; for example, after an antireflection film (AR film for short) is plated, the transmittance of a single lens can reach 98.5%, and the transmittance of the optical system is (98.5%)888.61%; theoretically, the imaging quality of the whole lens system is greatly improved; in fact, the maximum transmittance of such 8-lens system is about 85% (as shown in fig. 1) due to lens material absorption, lens surface quality and the like, which is much smaller than the designed value. If the reflectivity of the plated antireflection film can be improved<0.2 percent, the transmittance of a single lens reaches more than 99.6 percent, and the theoretical transmittance of the optical system is improved to 99.6 percent896.84% or more; it can be seen that the better the anti-reflection effect of the coating film, the higher the transmittance, the greater the improvement effect on the transmittance of the optical system using a plurality of lenses, and the more lenses, the more obvious the improvement effect, so it is quite necessary to coat the anti-reflection film with lower reflectance.
The early development of film optics was promoted by antireflection film technology developed in the 30 s of the 20 th century. Antireflection films play the most important role in all optical films for the advancement of optical technology, and the total production thereof is still more than other types of films today. Therefore, the research on the design and preparation technology of the antireflection film has important significance on production practice.
With the increasing precision of optical elements and optical systems, the performance requirements for thin films are also becoming more stringent: the low reflection band width is required to be wider and the maximum value of the reflectivity (called Rmax for short) is required to be smaller and smaller. This is because the long bandwidth low reflection antireflection film can improve image quality, color balance, while reducing glare and other unwanted effects generated in the multivariate optical system. At present, Rmax of most AR films is required to be within 0.5% -1%, the reflection bandwidth range is 420-720nm, and with the rapid advance of the optical imaging technology, the standards can not meet optical lenses with higher requirements, so that the research and development of a film with ultra-low reflectivity in an ultra-wide band is an important development direction at present.
Disclosure of Invention
The invention provides a broadband ultra-low reflectivity antireflection film, which has ultra-low residual reflectivity in a wider waveband range, can effectively reduce residual reflection on the surface of an optical element and improve the transmittance of the optical element, thereby reducing or even eliminating the glare phenomenon in an optical lens and enhancing the imaging definition.
In order to achieve the purpose, the technical scheme adopted by the invention is as follows:
an antireflection film with a wide waveband and ultra-low reflectivity comprises a substrate and an antireflection film stack arranged on the substrate;
the substrate is optical glass or optical plastic;
the antireflection film stack comprises a high-refractive-index film layer, a middle-refractive-index film layer and a low-refractive-index film layer which are stacked; the structural expression of the antireflection film stack is as follows: aM (b)iL/ciH/diM/eiL) n, where M represents an intermediate index film of 1/4 monitored wavelength thickness, L represents a low index film of 1/4 monitored wavelength thickness, H represents a high index film of 1/4 monitored wavelength thickness, and (b)iL/ciH/diM/eiL) represents the ith alternating unit, n represents the total number of alternating units, i is an integer and is more than or equal to 1 and less than or equal to n, and (b)iL/ciH/diM/eiL) ^ n represents that n alternate units are stacked in sequence, a, bi、ci、di、eiRepresenting the coefficients;
designing an antireflection film according to the structural expression, setting the initial structural cycle number n to be 60, setting a high-transmission wavelength region of the antireflection film to be 380-800 nm, wherein the maximum residual reflectivity of the antireflection film in the wavelength region is below 0.1%, the average residual reflectivity is 0.0756%, the total number of film layers of the antireflection film is 47, and the total thickness is 2979.51 nm;
or designing an antireflection film according to the structural expression, setting the initial structural cycle number n to be 40, setting a high-transmission wavelength region of the antireflection film to be 410-840 nm, setting the maximum residual reflectivity of the antireflection film in the wavelength region to be less than 0.1%, setting the average residual reflectivity to be 0.0889%, setting the total number of film layers of the antireflection film to be 24, and setting the total thickness to be 1155.55 nm.
Preferably, the material of the high refractive index film layer comprises one or more of lanthanum titanate, titanium dioxide, zirconium oxide, tantalum oxide and niobium oxide; the material of the middle refractive index film layer comprises Al2O3And cerium fluoride; the material of the low-refractive-index film layer comprises MgF2、SiO2And aluminum fluoride.
Compared with the prior art, the invention has the beneficial effects that:
the antireflection film of the invention is applicable to all known substrates at present, has very stable spectral curve, greatly reduces the residual reflectivity compared with the conventional film system in the prior art, has very wide spectral range of a low-reflection region, effectively improves the transmittance of an optical element, greatly reduces the intensity of stray light, weakens the interference of the stray light in an optical system, and improves the definition and the contrast of images. Compared with the antireflection film in the current application, the design of the invention widens the bandwidth of the low reflection region by 43.3 percent, and simultaneously reduces the maximum residual reflectivity Rmax to be less than 0.1 percent.
Drawings
FIG. 1 is a transmission spectrum of a lens coated with a conventional antireflection film;
FIG. 2 is a reflection spectrum of a single alternating cell;
FIG. 3 is a graph of transmission spectra for a multiple alternating cell stack;
FIG. 4 is a graph showing the residual reflectivity and wavelength of 47 antireflection films according to the present invention;
FIG. 5 is a graph showing the residual reflectivity and wavelength of a 24-layer antireflection film designed according to the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention.
An antireflection film with a wide waveband and an ultralow reflectivity comprises a substrate and an antireflection film stack arranged on the substrate, wherein the antireflection film stack comprises a high-refractive-index film layer, a middle-refractive-index film layer and a low-refractive-index film layer which are stacked.
The structural expression of the antireflection film composed of the substrate and the antireflection film stack is as follows:
S/aM(biL/ciH/diM/eiL)^n，
wherein S represents a substrate, aM (b)iL/ciH/diM/eiL) n represents the structure of the antireflection film stack, M represents the intermediate refractive index film layer with the thickness of 1/4 monitoring wavelength, L represents the low refractive index film layer with the thickness of 1/4 monitoring wavelength, H represents the high refractive index film layer with the thickness of 1/4 monitoring wavelength, and (b)iL/ciH/diM/eiL) represents the ith alternating unit, n represents the total number of alternating units, i is an integer and is more than or equal to 1 and less than or equal to n, and (b)iL/ciH/diM/eiL) ^ n represents (b)1L/c1H/d1M/e1L)、(b2L/c2H/d2M/e2L)……(bn-1L/cn-1H/dn-1M/en-1L)、(bnL/cnH/dnM/enL), the n alternating units being stacked in sequence, a, bi、ci、di、eiRepresenting the coefficient and taking on a non-negative value.
The coefficients a and bi、ci、di、eiForCalculating the thickness of the corresponding film layer, and aligning the coefficients a and b in the film system designi、ci、di、eiOptimization is performed to obtain the thickness of each film layer, typically coefficients a, b, that meet the design requirements of the film systemi、ci、di、eiThe values of all the layers are larger than zero, but in consideration of actual processing precision, the film layer with the too small film layer thickness after optimization needs to be deleted, and at the moment, the coefficient corresponding to the film layer can be adjusted to 0 to represent that the film layer does not exist in the optimized film system structure.
Further, bi、ci、di、eiAnd (3) representing coefficients in each alternating unit, and distinguishing values of b, c, d and e in different alternating units by using i, namely values of the coefficients corresponding to each film layer are independent.
For the sake of understanding, the structural expression is expressed in words as follows: the antireflection film structure comprises a substrate, an aM layer stacked on the substrate and n alternating units stacked on the aM layer, wherein a bL layer, a cH layer, a dM layer and an eL layer which are sequentially stacked are arranged in each alternating unit from one side close to the aM layer.
When designing a membrane system, firstly, carrying out initial assignment on a coefficient a and coefficients b, c, d and e in each alternating unit, and sequentially stacking according to a structural expression to obtain an initial structure; then, optimizing the initial structure to improve the performance of the antireflection film, wherein in the optimization process, the thickness of a part of film layers is reduced to 0nm, and the coefficient of the part of film layers is correspondingly adjusted to 0; when the thickness of the partial film layer is reduced to less than 2nm, the coefficient of the partial film layer is correspondingly adjusted to 0. And correspondingly deleting the film layer with the coefficient of 0 in the initial structure to obtain the antireflection film structure with the optimized film layer thickness and reaching the design target.
It should be noted that, in the process of adjusting the thickness of each film layer, optimization parameters can be manually input, and the computer automatically adjusts the thickness of each film layer according to the optimization parameters and the design target. When the film layer is deleted, the film layer can be manually selected and deleted, or the film layer deleting condition is input into the computer, and the film layer is automatically deleted by the computer according to the deleting condition, and the deleted film layer combination is directly displayed. The process of adjusting the thickness of each film layer by the computer according to the design target and optimizing the sequence of the film layers is not taken as the improvement focus of the invention and is not repeated.
The substrate in the structure of the antireflection film is optical glass or optical plastic; the material of the high-refractive-index film layer comprises one or more of lanthanum titanate, titanium dioxide, zirconium oxide, tantalum oxide and niobium oxide; the material of the middle refractive index film layer comprises Al2O3And cerium fluoride; the material of the low-refractive-index film layer comprises MgF2、SiO2And aluminum fluoride.
In other embodiments, the intermediate index film layer may also be a hybrid film material available from merck, germany. In the film system structure, the middle refractive index film layers in different layers may be made of different materials, and similarly, the high refractive index film layer/the low refractive index film layer in different layers may be made of different materials.
It is known that in the film system design, the optical glass surface has a certain reflection function to light according to the fresnel reflection principle, and the reflectivity can be usually determined according to the fresnel formula. Although the simple single-layer low-refractive-index film layer can reduce the reflectivity at the interface of the glass and improve the transmission, the reflectivity curve generally presents a V shape, namely the reflectivity curve can only generate obvious anti-reflection effect in a certain narrow wave band, and the anti-reflection effect of other wave bands is not obvious, so that the surface of the glass can generate color. Therefore, in order to generate the antireflection effect in a wider wavelength band, a multilayer film structure is usually adopted, and the multilayer film structure is designed according to the multilayer film system theory in this embodiment.
As for the multilayer film, as can be seen from the optical thin film theory, the characteristic matrix is:
in the formula:
is a characteristic matrix of the membrane system; k is the total number of film layers in the film system; etaiEffective optical admittance of the ith film; deltaiIs expressed as the phase thickness of the i-th film, and isi＝2πNidicosθi/λ；
Thus, it can be obtained
In the above formula: λ is the wavelength; diIs the thickness of the ith film; etaiEffective optical admittance of the ith film; thetaiIs the angle of refraction of the ith film; the TM wave is a p component wave; the TE wave is an s component wave; n is a radical ofiIs the refractive index of the ith film.
Further, the multilayer film has an admittance: eta is C/B.
Since the incident medium is air, the admittance of the incident medium is η0. To achieve zero surface reflection, it is theoretically necessary to have the admittance of the multilayer film at or near η in the reference wavelength range0So that the surface reflection reaches zero according to the fresnel formula.
The designed film is an antireflection film with ultra-low reflectivity in a wide band and takes a common optical element as a substrate material. The designed antireflection film is formed by alternately stacking a high-refractive-index film layer, a middle-refractive-index film layer and a low-refractive-index film layer, and the initial structure of the antireflection film stack is as follows: aM (b)iL/ciH/diM/eiL)^n。
The principle of the membrane system structure is as follows: the reflectance spectrum of each alternate cell is shown in fig. 2, and a dense spectrum such as that shown in fig. 3 can be formed by stacking a plurality of identical alternate cells. According to fourier analysis, all waveforms can be decomposed into sine waves, which can be formed by superposing sine waves of different frequencies, and a sine wave of one frequency corresponds to one point on a frequency domain. Similarly, the dense spectrum can be decomposed into n alternating unit reflection spectra, and then this curve can be approximated to a given data point column by iteratively adjusting its control vertices.
Because the iteration process of the geometric iteration method has obvious geometric significance, various geometric constraint conditions can be easily added in each step of the iteration, so that the limit curve generated by the geometric iteration method meets the constraints, and finally the required spectral curve is achieved.
The expression of the conventional antireflection film system initial structure is as follows: Sub/xH/yL/2H/L, where Sub represents a base layer, H, L represents a high refractive index film layer and a low refractive index film layer with 1/4 optical thicknesses based on a reference wavelength, and x, y, and 2 represent thickness coefficients of the corresponding film layers, for example, xH represents a high refractive index film layer with x 1/4 optical thicknesses. According to the film system structure, ZF6 is selected as a substrate, titanium dioxide and silicon dioxide are used as high and low refractive index materials, a broad-band visible light area antireflection film with an antireflection wavelength of 0.4-0.8 mu m is prepared, the highest residual reflectivity is below 0.8% after single-side film coating, and the average transmittance is 98.15% after double-side film coating.
Another commonly used antireflective film system structure is expressed as: Sub/(0.5L/0.5H) ^7/L, where Sub represents the base layer, H, L represents the high and low refractive index film layers with 1/4 optical thickness based on the reference wavelength, 0.5 represents the thickness coefficient of the corresponding film layer, and (0.5L/0.5H) ^7 represents (0.5L/0.5H) repeat stacking 7 times. The film system structure selects K9 as a substrate, lanthanum titanate and magnesium fluoride as high and low refractive index materials, the highest reflectivity is below 0.4% in the range of 430-720 nm, and the transmittance can reach 99.15% after double-sided coating.
While the antireflection film having more excellent performance than the two conventional structures can be obtained by optimizing the initial structure of this embodiment, the antireflection film of the present invention is further described below by using two embodiments.
Example 1
In this embodiment, a film is designed to be 47 layers, the total film thickness is 2979.51nm, the common glass is used as a substrate, and the structural expression of the antireflection film is as follows: S/aM (b)iL/ciH/diM/eiL) ^ n, the initial structure periodicity is 60, some optimized film thickness is reduced to 0nm, other film thickness is below 2nm, the control precision of the current vapor deposition machine is difficult to reach the design requirement, and the thin film is deleted, the specific structure of the designed film is optimized again, such asShown in table 1.
Structure of anti-reflection film with 147 layers of surface
The top left film in the table is a film deposited on the substrate, and the film is moved from the top left to the bottom right in sequence to obtain a film system structure which is stacked in sequence, and the bottom right film is the film layer which is the top of the film system structure, namely, the film layer which is in contact with air. In the table, L represents a low-refractive-index film layer, M represents a middle-refractive-index film layer, and H represents a high-refractive-index film layer; l1 and L2 represent low refractive index film layers different in two constituent materials, and H1 and H2 represent high refractive index film layers different in two constituent materials.
The reflectivity spectrogram of the 47-layer film system is shown in fig. 4, and can be seen that the maximum residual reflectivity Rmax is less than or equal to 0.1 percent and the average residual reflectivity is 0.0756 percent in a broad band range of 380-800 nm, which is reduced by one order of magnitude compared with the conventional film system in the prior art.
Example 2
Another film designed by the invention is 24 layers, the total film thickness is 1155.55nm, S-LAH53 is taken as a substrate, and the structural expression of the antireflection film is as follows: S/aM (b)iL/ciH/diM/eiL) ^ n, the initial structure cycle number is 40, after optimization, a film layer with the film thickness of 0nm and a film layer too thin are deleted, the film system is obtained through optimization again, the number of layers and the total thickness of a plated film are greatly reduced, the cost is saved, and the specific structure of the designed film layer is shown in Table 2.
Structure of 224 layers of antireflection film on watch
| Material | M | H1 | M | L1 | M | L1 | H1 | L1 | M |
| Film thickness/nm | 25.36 | 3.97 | 47.36 | 14.57 | 45.31 | 81.83 | 4.09 | 87.88 | 109.21 |
| H2 | M | H1 | L1 | H1 | L1 | H1 | L1 | M | H1 |
| 28.34 | 188.68 | 27.09 | 13.67 | 73.56 | 27.04 | 24.83 | 36.47 | 48.62 | 12.87 |
| M | H1 | L2 | H1 | L1 | |||||
| 37.96 | 69.49 | 15.82 | 25.95 | 105.77 |
The top left film in the table is a film deposited on the substrate, and the film is moved from the top left to the bottom right in sequence to obtain a film system structure which is stacked in sequence, and the bottom right film is the film layer which is the top of the film system structure, namely, the film layer which is in contact with air. In the table, L represents a low-refractive-index film layer, M represents a middle-refractive-index film layer, and H represents a high-refractive-index film layer; l1 and L2 represent low refractive index film layers different in two constituent materials, and H1 and H2 represent high refractive index film layers different in two constituent materials.
The reflectivity spectrogram of the 24-layer film system is shown in FIG. 5, and it can be seen that the maximum residual reflectivity Rmax is less than or equal to 0.1% and the average residual reflectivity is 0.0889% in a wide band range of 410-840 nm. Compared with the antireflection film in example 1, the antireflection film with 24 layers has fewer film layers, is easier to prepare, and has larger bandwidth of a low reflection region.
To ensure data comparability, the spectrograms in fig. 1 to 5 are all spectrograms when the monitoring wavelength is 550nm and light is incident at an angle of 0 degrees.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (2)
1. The antireflection film with the broadband and ultralow reflectivity is characterized by comprising a substrate and an antireflection film stack arranged on the substrate;
the substrate is optical glass or optical plastic;
the antireflection film stack comprises a high-refractive-index film layer, a middle-refractive-index film layer and a low-refractive-index film layer which are stacked; the structural expression of the antireflection film stack is as follows:
where M denotes an intermediate refractive index film layer of 1/4 monitor wavelength thickness, L denotes a low refractive index film layer of 1/4 monitor wavelength thickness, H denotes a high refractive index film layer of 1/4 monitor wavelength thickness,
is shown as
A number of alternating cells, n representing the total number of alternating cells,
is an integer and
，
denotes n alternating units stacked in sequence, a,
、
、
、
Representing the coefficients;
designing to obtain an antireflection film according to the structural expression, and setting an initial structureThe period number n is 60, the high-transmission wavelength region of the antireflection film is 380-800 nm, the maximum residual reflectivity of the antireflection film in the wavelength region is below 0.1%, the average residual reflectivity is 0.0756%, the total number of film layers of the antireflection film is 47, the total thickness is 2979.51nm, and the thicknesses of the film layers of the antireflection film stack which are sequentially laminated from the substrate are as follows: 32.89nm L1 layer, 3.52nm H1 layer, 216.3nm L1 layer, 28.31nm M layer, 20.93nm L1 layer, 42.07nm M layer, 10.25nm H1 layer, 1nm M layer, 1nm L1 layer, 9.43nm H1 layer, 1nm L1 layer, 13.83nm M layer, 1nm L1 layer, 1nm M layer, 3.67nm H1 layer, 1nm M layer, 57.43nm L1 layer, 5.05nm H1 layer, 1nm L1 layer, 1nm M layer, 1nm L1 layer, 10.7nm M layer, 1nm L1 layer, 1nm M layer, 2.56nm H72 layer, 1nm L1 nm L8672 layer, 1nm L1 layer, 1nm L72 nm L1 layer, 1nm L72 layer, 1nm L72 layer, 1nm L72 layer, 1nm L72 nm 3.72 layer, 1nm L72 layer, 1nm 3, 63.09nm H1 layer, 10.39nm L2 layer, 28.71nm H1 layer and 95.81nm L1 layer, wherein the L1 layer represents MgF21/4 monitoring wavelength thickness of a low refractive index film layer, the L2 layer representing a material of SiO21/4 of (a) a low refractive index film layer of wavelength thickness monitoring, the H1 layer representing a 1/4 wavelength thickness monitoring high refractive index film layer of titanium dioxide, the H2 layer representing a 1/4 wavelength thickness monitoring high refractive index film layer of lanthanum titanate;
or designing an antireflection film according to the structural expression, setting the initial structural cycle number n to be 40, setting a high-transmission wavelength region of the antireflection film to be 410-840 nm, setting the maximum residual reflectivity of the antireflection film in the wavelength region to be less than 0.1%, setting the average residual reflectivity to be 0.0889%, setting the total number of film layers of the antireflection film to be 24, and setting the total thickness to be 1155.55nm, wherein the thicknesses of the film layers of the antireflection film stack which are sequentially laminated from the substrate are as follows: 25.36nm M layer, 3.97nm H1 layer, 47.36nm M layer, 14.57nm L1 layer, 45.31nm M layer, 81.83nm L1 layer, 4.09nm H1 layer, 87.88nm L1 layer, 109.21nm M layer28.34nm H2 layer, 188.68nm M layer, 27.09nm H1 layer, 13.67nm L1 layer, 73.56nm H1 layer, 27.04nm L1 layer, 24.83nm H1 layer, 36.47nm L1 layer, 48.62nm M layer, 12.87nm H1 layer, 37.96nm M layer, 69.49nm H1 layer, 15.82nm L2 layer, 25.95nm H1 layer and 105.77nm L1 layer, wherein the L1 layer represents MgF21/4 monitoring wavelength thickness of a low refractive index film layer, the L2 layer representing a material of SiO21/4 of (a) a low refractive index film layer of wavelength thickness, the H1 layer representing a 1/4 wavelength thickness monitoring high refractive index film layer of titanium dioxide, and the H2 layer representing a 1/4 wavelength thickness monitoring high refractive index film layer of lanthanum titanate.
2. The antireflection film of claim 1 wherein the material of the high refractive index film layer comprises one or more of lanthanum titanate, titanium dioxide, zirconium oxide, tantalum oxide, and niobium oxide; the material of the middle refractive index film layer comprises Al2O3And cerium fluoride; the material of the low-refractive-index film layer comprises MgF2、SiO2And aluminum fluoride.
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| JP4958536B2 (en) * | 2006-01-12 | 2012-06-20 | 富士フイルム株式会社 | Anti-reflection coating |
| CN101782216B (en) * | 2010-02-04 | 2014-05-28 | 海洋王照明科技股份有限公司 | Reflector with ultra-wideband antireflective and protective film |
| JP2015064419A (en) * | 2013-09-24 | 2015-04-09 | 日本電気硝子株式会社 | Reflection suppressing film and reflection suppressing member |
| CN205507121U (en) * | 2016-04-01 | 2016-08-24 | 深圳市三海科技有限公司 | Colourless antireflection coating of sapphire basement is structure |
| CN105891928B (en) * | 2016-04-29 | 2018-06-12 | 杭州科汀光学技术有限公司 | A kind of camera shooting wave filter of day and night dual-purpose |
| CN109001849B (en) * | 2018-08-22 | 2024-04-19 | 杭州科汀光学技术有限公司 | Efficient antireflection film with wide wavelength range and optical system |
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2019
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