CN113135951A - Silicon-containing monomer, photocuring composition, packaging structure and semiconductor device - Google Patents
Silicon-containing monomer, photocuring composition, packaging structure and semiconductor device Download PDFInfo
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- CN113135951A CN113135951A CN202110376616.9A CN202110376616A CN113135951A CN 113135951 A CN113135951 A CN 113135951A CN 202110376616 A CN202110376616 A CN 202110376616A CN 113135951 A CN113135951 A CN 113135951A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 41
- 239000000178 monomer Substances 0.000 title claims abstract description 41
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 41
- 239000010703 silicon Substances 0.000 title claims abstract description 41
- 239000000203 mixture Substances 0.000 title claims abstract description 27
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 238000004806 packaging method and process Methods 0.000 title abstract description 14
- 238000000016 photochemical curing Methods 0.000 title abstract description 14
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 30
- 239000003085 diluting agent Substances 0.000 claims abstract description 27
- 239000004593 Epoxy Substances 0.000 claims abstract description 17
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 12
- 239000001257 hydrogen Substances 0.000 claims abstract description 12
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 claims abstract description 5
- GYZLOYUZLJXAJU-UHFFFAOYSA-N diglycidyl ether Chemical group C1OC1COCC1CO1 GYZLOYUZLJXAJU-UHFFFAOYSA-N 0.000 claims abstract description 5
- 125000003700 epoxy group Chemical group 0.000 claims abstract description 5
- 125000001072 heteroaryl group Chemical group 0.000 claims abstract description 5
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims abstract description 5
- 125000002768 hydroxyalkyl group Chemical group 0.000 claims abstract description 5
- 125000000686 lactone group Chemical group 0.000 claims abstract description 5
- 125000003342 alkenyl group Chemical group 0.000 claims abstract description 3
- 125000003545 alkoxy group Chemical group 0.000 claims abstract description 3
- 125000003118 aryl group Chemical group 0.000 claims abstract description 3
- 125000000753 cycloalkyl group Chemical group 0.000 claims abstract description 3
- 239000012044 organic layer Substances 0.000 claims description 16
- 125000002947 alkylene group Chemical group 0.000 claims description 8
- 150000002431 hydrogen Chemical class 0.000 claims description 6
- 125000000008 (C1-C10) alkyl group Chemical group 0.000 claims description 4
- 125000004432 carbon atom Chemical group C* 0.000 claims description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 125000000732 arylene group Chemical group 0.000 claims description 3
- 125000002993 cycloalkylene group Chemical group 0.000 claims description 3
- 238000005538 encapsulation Methods 0.000 claims description 3
- 125000003566 oxetanyl group Chemical group 0.000 claims description 3
- 125000000027 (C1-C10) alkoxy group Chemical group 0.000 claims description 2
- 125000006736 (C6-C20) aryl group Chemical group 0.000 claims description 2
- 125000006374 C2-C10 alkenyl group Chemical group 0.000 claims description 2
- 239000012952 cationic photoinitiator Substances 0.000 claims description 2
- 150000002148 esters Chemical class 0.000 claims description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 11
- 238000002834 transmittance Methods 0.000 abstract description 8
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 7
- 239000010409 thin film Substances 0.000 abstract description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract description 2
- 229920006254 polymer film Polymers 0.000 abstract description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 abstract 1
- 239000002245 particle Substances 0.000 description 36
- 239000010410 layer Substances 0.000 description 18
- 238000000034 method Methods 0.000 description 17
- 238000004519 manufacturing process Methods 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 125000005520 diaryliodonium group Chemical group 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 4
- 238000001914 filtration Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 125000005409 triarylsulfonium group Chemical group 0.000 description 4
- 238000005303 weighing Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 238000001514 detection method Methods 0.000 description 3
- 239000012954 diazonium Substances 0.000 description 3
- 150000001989 diazonium salts Chemical class 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N iron Substances [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910052742 iron Inorganic materials 0.000 description 3
- -1 iron arene salt Chemical class 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- 238000005507 spraying Methods 0.000 description 3
- OLPZCIDHOZATMA-UHFFFAOYSA-N 2,2-dioxooxathiiran-3-one Chemical compound O=C1OS1(=O)=O OLPZCIDHOZATMA-UHFFFAOYSA-N 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000001723 curing Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/02—Silicon compounds
- C07F7/08—Compounds having one or more C—Si linkages
- C07F7/0834—Compounds having one or more O-Si linkage
- C07F7/0838—Compounds with one or more Si-O-Si sequences
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/04—Polysiloxanes
- C09D183/06—Polysiloxanes containing silicon bound to oxygen-containing groups
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D4/00—Coating compositions, e.g. paints, varnishes or lacquers, based on organic non-macromolecular compounds having at least one polymerisable carbon-to-carbon unsaturated bond ; Coating compositions, based on monomers of macromolecular compounds of groups C09D183/00 - C09D183/16
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/842—Containers
- H10K50/8426—Peripheral sealing arrangements, e.g. adhesives, sealants
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/04—Polysiloxanes
- C08G77/14—Polysiloxanes containing silicon bound to oxygen-containing groups
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Epoxy Resins (AREA)
Abstract
The invention discloses a silicon-containing monomer, a photocuring composition, a packaging structure and a semiconductor device, belonging to the technical field of photocuring materials and thin film packaging, wherein the silicon-containing monomer has a structural general formula as follows:
in the formula, R1、R2、R3、R4、R5And R6Wherein at least one group has the formula:
Description
Technical Field
The invention relates to the technical field of photocuring materials and thin film packaging, in particular to a silicon-containing monomer, a photocuring composition, a packaging structure and a semiconductor device.
Background
Organic Light-Emitting Diodes (OLEDs) are electroluminescent semiconductor devices.
One of the biggest problems of the current stage of OLEDs is short lifetime, which is prone to failure. Among the main factors affecting the lifetime of an OLED is the presence of moisture and oxygen inside the OLED device over a long period of time. Therefore, in order to increase the lifespan of the OLED, improving the encapsulation process of the OLED is the most direct and effective method.
The existing structure for packaging the OLED is generally formed by bonding a glass or metal packaging cover plate and an OLED substrate through epoxy resin, and the packaging cover plate and the OLED substrate can play a certain role in blocking, but still have the problems of low water vapor transmission rate angle, low light transmittance and the like.
Disclosure of Invention
An object of an embodiment of the present invention is to provide a silicon-containing monomer to solve the above problems in the background art.
In order to achieve the above purpose, the embodiments of the present invention provide the following technical solutions:
a silicon-containing monomer has a general structural formula of formula 1:
in the formula, R1、R2、R3、R4、R5And R6Wherein at least one group has a formula 2, and each of the remaining groups is independently at least one of hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted hydroxyalkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted lactone group, a substituted or unsubstituted carboxyl group, a substituted or unsubstituted glycidyl ether group, and a hydroxyl group:
n1、n2、n3are all natural numbers;
R7and R8Independently alkyl of the same or different number of carbon atoms;
R9is alkyl, R10Hydrogen or methyl, is a binding site;
X1and X2Independently an epoxy-and/or ester-containing group.
Preferably, R1、R2、R3、R4、R5And R6Wherein each of the remaining groups, other than the group of formula 2, is independently selected from any one of substituted or unsubstituted C1-C10 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C1-C10 hydroxyalkyl groups, substituted or unsubstituted C6-C20 aryl groups, substituted or unsubstituted 2-20 membered heteroaryl groups, substituted or unsubstituted C2-C10 alkenyl groups, substituted or unsubstituted C1-C10 alkoxy groups, substituted or unsubstituted lactone groups, substituted or unsubstituted carboxyl groups, substituted or unsubstituted glycidyl ether groups, and hydroxyl groups; r7And R8C1-C10 alkyl independently being the same or different in number of carbon atoms; r9Is C1-C10 alkyl; n is1Is any natural number of 0-5; n is3Is 0 or 1.
Preferably, X1And X2Independently a group represented by any one of formula 3, formula 4, formula 5, and formula 6:
wherein X represents a binding site, Y1、Y2、Y3、Y4、Y5、Y6、Y7And Y8Each independently selected from any of hydrogen, substituted or unsubstituted alkyl.
Preferably, Y is1、Y2、Y3、Y4、Y5、Y6、Y7And Y8Each independently selected from any one of hydrogen, substituted or unsubstituted C1-C50 alkyl.
It is another object of embodiments of the present invention to provide a photocurable composition comprising a photocurable epoxy-containing alkyl diluent and a photoinitiator, and further comprising the above-described silicon-containing monomer.
Preferably, the weight percentage of the epoxy alkyl diluent in the photo-curing composition is 0.5-90%, the weight percentage of the silicon-containing monomer is 0.5-90%, and the weight percentage of the photoinitiator is 0.5-10%.
Preferably, the epoxy alkyl group-containing diluent is a silicon-containing monomer having an epoxy group and/or an oxetanyl group; the photoinitiator is a cationic photoinitiator.
Preferably, the epoxy alkyl group-containing diluent is a silicon-containing monomer having 1 to 4 epoxy groups or oxetanyl groups.
Preferably, the photoinitiator is one or more of diaryliodonium salt, triarylsulfonium salt, diazonium salt, alkylsulfonium salt, iron arene salt, sulfonyloxy ketone and triarylsiloxy ether.
Preferably, the epoxy alkyl group-containing diluent has the structural formula:
wherein Y is a single bond, a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted arylalkylene group, -O-, -N (R)11) -any of; -N (R)11) R in (A-C)11Is any one of hydrogen and substituted or unsubstituted alkyl.
Preferably, Y is a single bond, substituted or unsubstituted C1-C50 alkylene, substituted or unsubstituted C3-C50 cycloalkylene, substituted or unsubstituted C1-C50 alkylene, substituted or unsubstituted C6-C50 arylene, substituted or unsubstituted C7-C50 arylalkylene, -O-, -N (R)11) -any of; -N (R)11) R in (A-C)11Is any one of hydrogen and substituted or unsubstituted C1-C50 alkyl.
It is another object of an embodiment of the present invention to provide an encapsulation structure, which includes an organic layer, and the organic layer partially or completely contains the above-mentioned photocurable composition.
Another object of an embodiment of the present invention is to provide a semiconductor device, which includes a functional structure and the above package structure.
Compared with the prior art, the embodiment of the invention has the beneficial effects that:
according to the silicon-containing monomer provided by the embodiment of the invention, because the silicon-containing monomer contains a benzene ring and an epoxy group, when the silicon-containing monomer is matched with a photocurable epoxy alkyl-containing diluent, the formed polymer film has higher light transmittance, higher curing speed, lower water vapor transmittance and lower plasma etching rate, so that the requirements of the packaging structure in the existing semiconductor device are better met.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1
The embodiment provides a method for manufacturing a package structure, which includes the following steps:
s1, weighing 20g of silicon-containing monomer 001, 75g of epoxy alkyl-containing diluent L001 and 5g of diaryl iodonium salt, mixing together, stirring for 80h at 50 ℃ under vacuum, filtering by using a syringe filter, detecting by using a particle counter, and obtaining a photocuring composition for later use when the number of particles with the particle size of more than 0.5 mu m is detected to be not more than 50; wherein, the structural formula of the silicon-containing monomer 001 is as follows:
the structural formula of the alkylene oxide-containing diluent L001 is as follows:
s2, selecting silicon nitride as an inorganic layer material, and coating the inorganic layer material on the surface of the object to be packaged by a Chemical Vapor Deposition (CVD) method to form the inorganic layer.
S3, spraying the photo-curing composition on the surface of the inorganic layer by an ink-jet printer to form an organic layer, and using the intensity of 100mW/cm2The organic layer was irradiated with ultraviolet light for 10 seconds each time to harden the organic layer.
S4, coating the inorganic layer material on the organic layer by CVD method to form another inorganic layer, and obtaining the thin film type packaging structure.
Example 2
The embodiment provides a method for manufacturing a package structure, which includes the following steps:
s1, weighing 20g of silicon-containing monomer 002, 75g of epoxy alkyl-containing diluent L002 and 5g of triarylsulfonium salt, mixing together, stirring for 80h at 50 ℃ under vacuum, filtering by using a syringe filter, detecting by using a particle counter, and obtaining a photocuring composition for later use when the number of particles with the particle size of more than 0.5 mu m is detected to be not more than 50; wherein, the structural formula of the silicon-containing monomer 002 is as follows:
the structural formula of the epoxy alkyl containing diluent L002 is as follows:
s2, selecting silicon nitride as an inorganic layer material, and coating the inorganic layer material on the surface of the object to be packaged by a Chemical Vapor Deposition (CVD) method to form the inorganic layer.
S3, spraying the photo-curing composition on the surface of the inorganic layer by an ink-jet printer to form an organic layer, and using the intensity of 100mW/cm2The organic layer was irradiated with ultraviolet light for 10 seconds each time to harden the organic layer.
S4, coating the inorganic layer material on the organic layer by CVD method to form another inorganic layer, and obtaining the thin film type packaging structure.
Example 3
The embodiment provides a method for manufacturing a package structure, which includes the following steps:
s1, weighing 20g of silicon-containing monomer 003, 75g of epoxy alkyl-containing diluent L003 and 5g of iron arene salt photoinitiator, mixing together, stirring for 80 hours at 50 ℃ under vacuum, then filtering by using a syringe filter, detecting by using a particle counter, and obtaining a photocuring composition for later use when the number of particles with the particle size of more than 0.5 mu m is detected to be not more than 50; wherein, the structural formula of the silicon-containing monomer 003 is as follows:
the epoxy alkyl group-containing diluent L003 has the following structural formula:
s2, selecting silicon nitride as an inorganic layer material, and coating the inorganic layer material on the surface of the object to be packaged by a Chemical Vapor Deposition (CVD) method to form the inorganic layer.
S3, spraying the photo-curing composition on the surface of the inorganic layer by an ink-jet printer to form an organic layer, and using the intensity of 100mW/cm2The organic layer was irradiated with ultraviolet light for 10 seconds each time to harden the organic layer.
S4, coating the inorganic layer material on the organic layer by CVD method to form another inorganic layer, and obtaining the thin film type packaging structure.
Example 4
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 1 only in that step S1 is: 30g of a silicon-containing monomer 001, 60g of an epoxyalkyl-containing diluent L001 and 10g of a diaryliodonium salt were weighed and mixed together, stirred at 50 ℃ under vacuum for 80 hours, then filtered with a syringe filter, and detected by a particle counter, and when the number of particles having a particle size of more than 0.5 μm is detected to be not more than 50, a photocurable composition was obtained for use.
Example 5
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 2 only in that step S1 is: 30g of silicon-containing monomer 002, 60g of epoxyalkyl-containing diluent L002 and 10g of triarylsulfonium salt were weighed and mixed together, stirred at 50 ℃ under vacuum for 80 hours, then filtered by a syringe filter, and detected by a particle counter, and when the number of particles having a particle size of more than 0.5 μm is detected to be not more than 50, a photocurable composition was obtained for use.
Example 6
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 3 only in that step S1 is: weighing 30g of silicon-containing monomer 003, 60g of epoxy alkyl-containing diluent L003 and 10g of iron arene salt photoinitiator, mixing together, stirring for 80 hours at 50 ℃ under vacuum, filtering by using a syringe filter, detecting by using a particle counter, and obtaining the photocuring composition for later use when the number of particles with the particle size of more than 0.5 mu m is not more than 50.
Example 7
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 1 only in that step S1 is: 0.5g of a silicon-containing monomer 001, 90g of an epoxyalkyl-containing diluent L001 and 9.5g of a diazonium salt are weighed, mixed together, stirred at 50 ℃ under vacuum for 80 hours, then filtered using a syringe filter, checked using a particle counter, and when no more than 50 particles with a particle size of more than 0.5 μm are detected, a photocurable composition is obtained for use.
Example 8
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 1 only in that step S1 is: 90g of the silicon-containing monomer 001, 0.5g of the epoxyalkyl-containing diluent L001 and 9.5g of the alkylsulfonium salt were weighed out, mixed together, stirred at 50 ℃ under vacuum for 80 hours, then filtered with a syringe filter, and detected by a particle counter, and when the number of particles having a particle diameter of more than 0.5 μm is detected to be not more than 50, a photocurable composition was obtained for use.
Example 9
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 1 only in that step S1 is: 45g of silicon-containing monomer 001, 45g of epoxyalkyl-containing diluent L001, 5g of sulfonyloxyketone and 5g of triarylsiloxy ether are weighed, mixed together, stirred at 50 ℃ under vacuum for 80 hours, filtered by a syringe filter, detected by a particle counter, and when the number of particles with the particle size of more than 0.5 mu m is detected to be not more than 50, a photocurable composition is obtained for later use.
Example 10
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 1 only in that step S1 is: 40g of the silicon-containing monomer 001, 59.5g of the epoxyalkyl-containing diluent L001 and 0.5g of the diaryliodonium salt were weighed out, mixed together, stirred at 50 ℃ under vacuum for 80 hours, then filtered with a syringe filter, checked with a particle counter, and when it was detected that the number of particles having a particle size of more than 0.5 μm was not more than 50, a photocurable composition was obtained for use.
Example 11
This embodiment provides a method for manufacturing a package structure, which is different from embodiment 1 only in that step S1 is: 40g of silicon-containing monomer 001, 55g of epoxyalkyl-containing diluent L001, 3g of diaryliodonium salt, 1g of triarylsulfonium salt and 1g of diazonium salt are weighed out, mixed together, stirred under vacuum at 50 ℃ for 80 hours, then filtered with a syringe filter, examined with a particle counter, and when no more than 50 particles with a particle size of greater than 0.5 μm are detected, a photocurable composition is obtained for use.
Comparative example 1
This comparative example provides a method for manufacturing a package structure, which is different from example 1 only in that step S1 is: 98g of an epoxyalkyl-containing diluent L001 and 2g of a diaryliodonium salt were weighed, mixed together, stirred at 50 ℃ under vacuum for 80 hours, filtered with a syringe filter, and detected using a particle counter, and when the number of particles having a particle size of more than 0.5 μm was detected to be not more than 50, a photocurable composition was obtained for use.
Performance evaluation:
first, the water vapor transmission rate of the package structures prepared in examples 1 to 6 and comparative example 1 was measured, and the measurement results are shown in table 1. Wherein, the detecting instrument: the manufacturer is a high-precision water vapor transmission rate tester with model number of AQUARAN2, manufactured by MOCON corporation (American Membrane health corporation); detection conditions are as follows: the temperature is 85 ℃, and the relative humidity is 85%; detection duration: for 24 hours.
Second, transmittance measurements were performed on the package structures prepared in examples 1 to 6 and comparative example 1, and the measurement results are shown in table 1. Wherein, the detecting instrument: a light transmittance tester; detection conditions are as follows: the temperature was 40 ℃ and the relative humidity was 85%.
TABLE 1
| Group of | Water vapor transmission rate (g/m)2·d) | Light transmittance (%) |
| Example 1 | 4.0*10-4 | 85 |
| Example 2 | 3.9*10-4 | 87 |
| Example 3 | 3.9*10-4 | 86 |
| Example 4 | 4.1*10-4 | 85 |
| Example 5 | 4.1*10-4 | 86 |
| Example 6 | 3.8*10-4 | 87 |
| Comparative example 1 | 9.0*10-3 | 86 |
As can be seen from table 1, examples 1 to 6 are different from comparative example 1 in that the silicon-containing monomers provided in examples 1 to 6 are added, and a comparison shows that the water vapor transmission rate of the package structure after the silicon-containing monomers provided in examples of the present invention are added is obviously lower than that of the package structure without the silicon-containing monomers provided in examples of the present invention; therefore, the semiconductor device packaged by the packaging structure can effectively isolate moisture, so that the service life of the semiconductor device can be prolonged.
In another embodiment of the present invention, there is also provided a semiconductor device including the functional structure and the package structure described above. Specifically, the semiconductor device may be any one of an electroluminescent device, a photoluminescent device, a lighting device, a light emitting diode, a solar cell, a thin film transistor, and a photodetector, but is not limited thereto.
In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.
Claims (10)
1. A silicon-containing monomer, wherein the structural formula of the silicon-containing monomer is formula 1:
in the formula, R1、R2、R3、R4、R5And R6In which at least one group is presentFormula 2, and each of the remaining groups is independently at least one of hydrogen, a substituted or unsubstituted alkyl group, a substituted or unsubstituted cycloalkyl group, a substituted or unsubstituted hydroxyalkyl group, a substituted or unsubstituted aryl group, a substituted or unsubstituted heteroaryl group, a substituted or unsubstituted alkenyl group, a substituted or unsubstituted alkoxy group, a substituted or unsubstituted lactone group, a substituted or unsubstituted carboxyl group, a substituted or unsubstituted glycidyl ether group, and a hydroxyl group:
n1、n2、n3are all natural numbers;
R7and R8Independently alkyl of the same or different number of carbon atoms;
R9is alkyl, R10Hydrogen or methyl, is a binding site;
X1and X2Independently an epoxy-and/or ester-containing group.
2. The silicon-containing monomer of claim 1, wherein R is1、R2、R3、R4、R5And R6Wherein each of the remaining groups, other than the group of formula 2, is independently selected from any one of substituted or unsubstituted C1-C10 alkyl groups, substituted or unsubstituted C3-C20 cycloalkyl groups, substituted or unsubstituted C1-C10 hydroxyalkyl groups, substituted or unsubstituted C6-C20 aryl groups, substituted or unsubstituted 2-20 membered heteroaryl groups, substituted or unsubstituted C2-C10 alkenyl groups, substituted or unsubstituted C1-C10 alkoxy groups, substituted or unsubstituted lactone groups, substituted or unsubstituted carboxyl groups, substituted or unsubstituted glycidyl ether groups, and hydroxyl groups; r7And R8C1-C10 alkyl independently being the same or different in number of carbon atoms; r9Is C1-C10 alkyl; n is1Is any natural number of 0-5; n is3Is 0 or 1.
3. Root of herbaceous plantThe silicon-containing monomer of claim 1, wherein X is1And X2Independently a group represented by any one of formula 3, formula 4, formula 5, and formula 6:
wherein X represents a binding site, Y1、Y2、Y3、Y4、Y5、Y6、Y7And Y8Each independently selected from any of hydrogen, substituted or unsubstituted alkyl.
4. The silicon-containing monomer of claim 3, wherein Y is1、Y2、Y3、Y4、Y5、Y6、Y7And Y8Each independently selected from any one of hydrogen, substituted or unsubstituted C1-C50 alkyl.
5. A photocurable composition comprising a photocurable alkylene oxide-containing diluent and a photoinitiator, characterized in that it further comprises a silicon-containing monomer as claimed in any one of claims 1 to 4.
6. A photo-curable composition according to claim 5, wherein the epoxy alkyl-containing diluent is present in an amount of 0.5 to 90% by weight, the silicon-containing monomer is present in an amount of 0.5 to 90% by weight, and the photoinitiator is present in an amount of 0.5 to 10% by weight.
7. The photocurable composition of claim 5 wherein the epoxy-containing diluent is a silicon-containing monomer having an epoxy group and/or an oxetane group; the photoinitiator is a cationic photoinitiator.
8. A photocurable composition according to claim 7,the epoxy alkyl-containing diluent is characterized in that the structural formula of the epoxy alkyl-containing diluent is as follows:
wherein Y is a single bond, a substituted or unsubstituted alkylene group, a substituted or unsubstituted cycloalkylene group, a substituted or unsubstituted alkylene group, a substituted or unsubstituted arylene group, a substituted or unsubstituted arylalkylene group, -O-, -N (R)11) -any of; -N (R)11) R in (A-C)11Is any one of hydrogen and substituted or unsubstituted alkyl.
9. An encapsulation structure comprising an organic layer, wherein the organic layer partially or completely comprises the photocurable composition according to any one of claims 5 to 8.
10. A semiconductor device comprising a functional structure, further comprising the package structure of claim 9.
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| WO2024007741A1 (en) * | 2022-07-06 | 2024-01-11 | 杭州福斯特应用材料股份有限公司 | Ink composition, packaging structure, and semiconductor device |
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