CN113106404A - Sputtering target structure - Google Patents

Sputtering target structure Download PDF

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Publication number
CN113106404A
CN113106404A CN202010781370.9A CN202010781370A CN113106404A CN 113106404 A CN113106404 A CN 113106404A CN 202010781370 A CN202010781370 A CN 202010781370A CN 113106404 A CN113106404 A CN 113106404A
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China
Prior art keywords
target
plate
sidewall
protective
magnetic
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CN202010781370.9A
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Chinese (zh)
Inventor
黄呈加
吴智稳
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Sumika Technology Co Ltd
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Sumika Technology Co Ltd
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Publication of CN113106404A publication Critical patent/CN113106404A/en
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

The sputtering target structure comprises a protective element, a carrier plate and a target plate. The carrier plate comprises a bearing surface. The target plate is on the bearing surface and includes at least one sidewall target surface. The target plate has only on at least one sidewall of the target surface a protective element disposed thereon.

Description

Sputtering target structure
Technical Field
The present invention relates to a sputtering target structure, and more particularly, to a sputtering target structure including a protective element and/or a magnetic element.
Background
Currently, sputtering is one of the main deposition methods. The sputtering technique generally forms plasma in a sputtering chamber of a sputtering machine, the plasma (plasma) bombards a metal target plate to collide metal atoms of the target plate, so as to form gas molecules which are emitted to a substrate to be deposited, and the gas molecules are subjected to sputtering actions such as adhesion, adsorption, surface migration, nucleation and the like, so as to finally form a metal film with the metal atoms on the substrate. Sputtering technology is widely used in the fields of industrial production and scientific research. However, the distribution of the magnetic field generated by the sputter tool in the target plate affects sputter etching. Different locations of the target plate may have different amounts of erosion due to different magnetic field strengths, resulting in non-uniform sputter erosion depths of the target plate. It is often the case that when one location of the target plate is too thin, even though most other locations still have sufficient thickness, the target plate must be replaced with a new one, resulting in waste of the target plate (because most other locations still have sufficient thickness).
Disclosure of Invention
The invention relates to a sputtering target structure.
According to a first aspect of the present invention, a sputtering target structure is provided, which comprises a carrier plate, a target plate and a magnetic element. The carrier plate comprises a bearing surface. The target plate is on the bearing surface and includes a target recess. The magnetic element is disposed in the target recess.
According to a second aspect of the present invention, a sputtering target structure is provided, which comprises a carrier plate, a target plate and a protective element. The carrier plate comprises a bearing surface. The target plate is on the bearing surface and includes a target recess. The protection element is arranged in the target notch.
According to a third aspect of the present invention, a sputtering target structure is provided, which comprises a carrier plate, a target plate and a magnetic element. The carrier plate comprises a bearing surface. The target plate is on the bearing surface and includes a sidewall target surface. The magnetic element is arranged on the surface of the side wall target.
According to a fourth aspect of the present invention, a sputtering target structure is provided, which comprises a protective element, a carrier plate and a target plate. The carrier plate comprises a bearing surface. The target plate is on the bearing surface and includes at least one sidewall target surface. The target plate has only on at least one sidewall of the target surface a protective element disposed thereon.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
FIG. 1A is a perspective view of a sputter target structure according to a first embodiment.
FIG. 1B is a schematic cross-sectional view of a sputter target structure according to a first embodiment.
Fig. 2A is a top view of a sputter target structure of a first embodiment.
FIG. 2B is a schematic cross-sectional view of a sputter target structure according to a second embodiment.
FIG. 3 is a schematic cross-sectional view of a sputtering target structure according to a third embodiment.
FIG. 4 is a schematic cross-sectional view of a sputter target structure according to a fourth embodiment.
FIG. 5 is a schematic cross-sectional view of a sputter target structure according to a fifth embodiment.
FIG. 6 is a schematic cross-sectional view of a sputter target structure according to a sixth embodiment.
FIG. 7 is a schematic cross-sectional view of a sputter target structure according to a seventh embodiment.
Wherein, the reference numbers:
102 carrier plate
110 bearing surface
111 lower surface
204 adhesive layer
306,4306 target material plate
312,4312 side wall target surface
312A first sidewall target surface
312B second sidewall target surface
314 lower target surface
316L,4316L lower sidewall surface portion
316T upper sidewall surface portion
4328 target notch
4330 lower target surface
408 protective element
408A first protective element
408B a second protective element
420 side wall protection surface
432 lower protective surface
434 upper protective surface
518,3518,5518,7518 magnetic element
518A first magnetic element
518B second magnetic element
3524 longitudinally extending magnetic portion
3526,7526,5526 laterally extending magnetic part
3526G lower magnetic surface
3526U upper magnetic surface
H, H1, H2, H3, H31, H32, H33 height
L is the size
L1, L2, L3 Length
W1 size
W, W2, W3 width
Detailed Description
The invention will be described in detail with reference to the following drawings, which are provided for illustration purposes and the like:
the structure of the sputtering target according to the first embodiment is described with reference to fig. 1A and 1B, wherein fig. 1A is a perspective view of the sputtering target structure, and fig. 1B is a schematic cross-sectional view along the EF line shown in fig. 1A. The sputtering target structure includes a carrier 102, an adhesive layer 204, a target plate 306 and a protection device 408. The carrier 102 includes a carrying surface 110. The carrier 102 may be a backplane. The target plate 306 and the protection device 408 are disposed on the carrying surface 110 and can be adhered to the carrier plate 102 by the adhesion layer 204, in one embodiment, the adhesion layer 204 comprises a metal adhesive or a soft solder. In one embodiment, the material of adhesive layer 204 comprises tin, zinc, indium, or a combination thereof, for example. The invention is not limited in this regard and in other embodiments, the protective element 408 can be secured to the carrier plate 102 using fasteners or joints (not shown) to complete the sputtering target structure. The fasteners or engagement members may include, but are not limited to, screws, plugs, and the like.
In one embodiment, the target plate 306 and the protection device 408 can be simultaneously bonded to the carrier plate 102 by the adhesive layer 204 in the same process step without adding additional manufacturing processes. Compared to a sputtering target structure (not shown) having a protective element disposed in the carrier 102 (a gap is formed in the disposition position), the sputtering target structure having the protective element 408 disposed on the carrying surface 110 according to the embodiment of the invention does not require additional manufacturing processes, and the manufacturing method is simpler.
In this embodiment, the target plate 306 has protective elements 408 disposed thereon only on the sidewall target surface 312. In other words, the protective elements 408 are only located on the sidewall target surface 312 of the target plate 306 and not on other surfaces of the target plate 306, e.g., the protective elements 408 are not disposed on the lower target surface 314 of the target plate 306.
For example, the protective member 408 includes a first protective member 408A and a second protective member 408B separated from each other by the target plate 306. The sidewall target surface 312 of the target plate 306 includes opposing first and second sidewall target surfaces 312A and 312B. The first sidewall target surface 312A and the second sidewall target surface 312B each include an upper sidewall surface portion 316T and a lower sidewall surface portion 316L that are aligned with each other. Of the upper sidewall surface portion 316T and the lower sidewall surface portion 316L of the first sidewall target surface 312A, only the lower sidewall surface portion 316L has the first protective element 408A disposed thereon, that is, the first protective element 408A is not disposed on the upper sidewall surface portion 316T. Similarly, only the lower sidewall surface portion 316L of the second sidewall target surface 312B has the second protective element 408B disposed thereon.
In one embodiment, the target plate 306 has only first and second protective elements 408A and 408B disposed on the first and second sidewall target surfaces 312A and 312B, respectively. The invention is not so limited and the sputter target structure can have other numbers of protective elements 408 and/or the protective elements 408 can be disposed on other portions of the sidewall target surface 312. The shape and/or size of the protective member 408 can be appropriately adjusted, for example, the thickness of the protective member 408 can be the same as the thickness of the target plate 306, and the upper protective surface of the protective member 408 can be aligned with the upper plate surface of the target plate 306.
The protection device 408 can be disposed in an area where the carrier 102 may be impacted when the sputtering target structure is in a sputtering process in a sputtering chamber, so as to prevent the carrier 102 from being damaged or dented. The protection device 408 can be used to prevent the carrier plate 102 disposed thereunder from being damaged by sputtering impact during the sputtering process.
In the present invention, the sputtering target structure can be disassembled. The disassembly method includes detaching the target plate 306 from the carrier plate 102. The protection device 408 can also be detached from the carrier 102. In the embodiment, after the protection device 408 is damaged by impact in the sputtering process, only the protection device 408 may be directly replaced without reworking the carrier 102, such as grinding and filling the recess with sand paper, or replacing the entire carrier 102, so as to reduce the manufacturing cost, and the method for replacing the protection device 408 is simple and fast, thereby improving the manufacturing efficiency.
Compared to a sputtering target structure (not shown) having a protection device disposed in the carrier 102 (a gap is required to be formed in the disposition position), the sputtering target structure having the protection device 408 disposed on the carrying surface 110 according to the embodiment of the present invention does not require additional manufacturing processes, and the manufacturing method is simpler, and can improve the process efficiency and reduce the material consumption.
The material of the target plate 306 may depend on the material of the thin film to be sputter deposited on the substrate, such as a metal or an oxide. The carrier plate 102 and the target plate 306 may be made of the same material or different materials. In one embodiment, the carrier 102 is made of a metal such as aluminum, titanium or copper, and the target 306 is made of a metal such as aluminum, titanium or copper or indium tin oxide. The material of the protection device 408 may be the same as or different from that of the carrier 102. For example, the material of the protection element 408 may include, but is not limited to, metal such as copper, titanium, aluminum, etc., or other suitable materials.
The dimension W1 (e.g. 90mm to 190mm, e.g. length) of the protection element 408 is determined by the width of the carrier plate 102 and the target plate 306, based on the width W2 of the carrier plate 102 being not more than the width W of the target plate 306 and not less than the width W2 of the target plate 306, e.g. the width W2 of the target plate 306 is 90mm and the dimension W1 of the protection element 408 is not less than 90 mm. In one embodiment, the width W2 of the target board 306 is about 180mm, and the width W of the carrier plate 102 is about 190mm, so the dimension W1 of the protection element 408 is between 180mm and 190mm, and therefore the dimension W1 of the protection element 408 occupies 47% to 100% of the width W of the carrier plate 102. In one embodiment, the dimension W1 of the protection component 408 is the same as the width W of the carrier 102. The dimension L (e.g., width) of the protection element 408 is about 90-150mm, the length L1 of the carrier plate 102 is about 3000mm, and the length L2 of the target plate 306 is about 2650 mm. The dimension L of the protection component 408 is about 3% to 5% of the length L1 of the carrier board 102. The length L3 of the carrier plate portion of the carrier plate 102 between the first protective element 408A and the second protective element 408B is about 90mm to 3000 mm. Length L3 represents approximately 3% to 100% of length L1. The height (or thickness) H of the protective element 408 is about 0.1-4mm, such as 0.1-2mm, such as 2 mm. The height (or thickness) H1 of carrier plate 102 is about 10-20mm, for example 16 mm. In one embodiment, the height H of the protective element 408 is less than the height (or thickness) H2 of the target plate 306. The height H2 of the target board 306 is about 20 mm. The safety ratio of the height H of the protection element 408 to the height H2 of the target 306 is less than 10% to prevent the protection element 408 from colliding with a tool above the target 306 during the sputtering process.
The structure of the sputtering target of the second embodiment is described with reference to fig. 2A and 2B, wherein fig. 2A is a top view of the sputtering target structure, and fig. 2B is a schematic cross-sectional view along the IJ line shown in fig. 2A. The differences between the sputter target structures of the first and second embodiments are explained as follows. The sputter target structure further includes a magnetic element 518. The material of the magnetic element 518 may be selected from iron (Fe), cobalt (Co), nickel (Ni), stainless steel, permalloy (permalloy), metal foil (foil), and any combination thereof, wherein the stainless steel is SUS430, for example. The magnetic element 518 is adhered to the carrier 102 by the adhesive layer 204. The magnetic element 518 is disposed between the sidewall target surface 312 of the target plate 306 and the sidewall protection surface 420 (inner sidewall protection surface) of the protection element 408.
In this embodiment, the target plate 306 has magnetic elements 518 disposed thereon only on the sidewall target surface 312. In other words, the magnetic elements 518 are only located on the sidewall target surface 312 of the target plate 306 and not on other surfaces of the target plate 306, e.g., the magnetic elements 518 are not disposed on the lower target surface 314 of the target plate 306. The magnetic element 518 has a longitudinally extending shape or alternatively, the magnetic element 518 has a longitudinally extending magnetic portion.
For example, the magnetic elements 518 include a first magnetic element 518A and a second magnetic element 518B separated from each other by the target plate 306. Of the upper sidewall surface portion 316T and the lower sidewall surface portion 316L of the first sidewall target surface 312A, only the lower sidewall surface portion 316L has the first magnetic element 518A disposed thereon, i.e., the first magnetic element 518A is not disposed on the upper sidewall surface portion 316T. Similarly, only the lower sidewall surface portion 316L of the second sidewall target surface 312B has the second magnetic element 518B disposed thereon.
In one embodiment, the target plate 306 has only the first magnetic element 518A and the second magnetic element 518B disposed thereon on the first sidewall target surface 312A and the second sidewall target surface 312B, respectively, which are opposite. The invention is not so limited and the sputter target structure can have other numbers of magnetic elements 518 and/or the magnetic elements 518 can be disposed on other portions of the sidewall target surface 312. Morphology and/or size of the magnetic element 518
The thickness of the magnetic element 518 can be adjusted as desired, for example, the thickness of the magnetic element 518 can be the same as the thickness of the target plate 306, the thickness of the magnetic element 518 can be the same as or different from the thickness of the protective element 408, the upper magnetic surface of the magnetic element 518 can be aligned with the upper plate surface of the target plate 306, and the upper magnetic surface of the magnetic element 518 can be aligned with or misaligned with the upper protective surface of the protective element 408. The configuration of the magnetic elements 518 may be tailored to the desired magnetic field distribution to further average the wear rate of the target plate 306 at each location to improve the life of the target plate 306.
In one embodiment, the configuration of the magnetic elements 518 may be changed according to the wear profile of the target plate 306 during the sputtering process, thereby adjusting the magnetic field profile of the process and the wear of the target plate 306 at different locations, such as to provide a greater wear rate on thicker portions of the target plate 306, and vice versa, thereby increasing the lifetime of the target plate 306. The configuration of the magnetic element 518 can be changed easily and quickly, thereby improving the process efficiency.
In one embodiment, an adhesive layer (not shown) may optionally be disposed between the magnetic element 518 and the sidewall target surface 312 of the target plate 306 to adhere them to each other, or other suitable bonding means or elements (not shown) may be used to fix the magnetic element 518 to the sidewall target surface 312 of the target plate 306.
In one embodiment, the target plate 306 and the magnetic element 518 can be simultaneously bonded to the carrier plate 102 by the adhesive layer 204 in the same process step without additional manufacturing steps. Compared to a sputtering target structure (not shown) having a magnetic element disposed in the carrier plate 102 (a gap is required to be formed in the disposition position) or disposed on the lower surface 111 of the carrier plate 102, the sputtering target structure having the magnetic element 518 disposed on the carrying surface 110 according to the embodiment of the invention does not require additional manufacturing processes, and the manufacturing method is simpler.
The height (or thickness) H3 of the magnetic element 518 is between 0.1 mm and 0.5 mm. The magnetic element 518 is, for example, a metal foil (foil), but may also be a thicker magnetic plate. In one embodiment, the width W3 (e.g., the maximum width) of the magnetic element 518 is between 20% and 100% of the width W2 of the target plate 306.
FIG. 3 is a schematic cross-sectional view of a sputter target structure of a third embodiment, the differences from the sputter target structure of the second embodiment being explained as follows. The magnetic element 3518 has an L-shape. The magnetic element 3518 includes a longitudinally extending magnetic portion 3524 and a laterally extending magnetic portion 3526 that are contiguous. The longitudinally extending magnetic portion 3524 is between the sidewall target surface 312 of the target plate 306 and the sidewall shield surface 420 of the shield member 408. The laterally extending magnetic portion 3526 is disposed in a position facing away from the protective element 408, and the laterally extending magnetic portion 3526 is disposed between the carrying surface 110 of the carrier plate 102 and the lower target surface 314 of the target plate 306. Upper magnetic surface 3526U of laterally extending magnetic portion 3526 is adjacent target plate 4306 and lower magnetic surface 3526G of laterally extending magnetic portion 3526 is adjacent carrier plate 102.
In one embodiment, the target plate 306, the protective element 408 and the magnetic element 3518/laterally extending magnetic portion 3526 can be simultaneously bonded to the carrier plate 102 by the adhesive layer 204 in the same process step without adding additional manufacturing steps. Compared to a sputtering target structure (not shown) having a magnetic element disposed in the carrier plate 102 (a gap is required to be formed in the position), or disposed on the lower surface 111 of the carrier plate 102, the sputtering target structure having the magnetic element 3518 disposed on the carrying surface 110 according to the embodiment of the present invention does not require additional manufacturing processes, and the manufacturing method is simpler.
In one embodiment, the surface of the laterally extending magnetic portion 3526 is completely covered by the adhesive layer 204, such as but not limited to the upper magnetic surface 3526U and/or the lower magnetic surface 3526G of the laterally extending magnetic portion 3526.
In one embodiment, an adhesive layer (not shown) may be optionally disposed between adjacent ones of the surfaces of the magnetic element 3518, the protective element 408, and the target plate 306 to adhere to each other, or may be secured to each other by other suitable bonding means or bonding elements (not shown). The height (or thickness) H31 of the magnetic element 3518 is between 0.1 mm and 0.5 mm.
FIG. 4 is a schematic cross-sectional view of a sputter target structure of a fourth embodiment, the differences from the sputter target structure of the second embodiment being explained as follows. The target plate 4306 includes a target recess 4328 at a lower edge portion of the target plate 4306. The target recess 4328 is defined by a lower target surface 4330 and a lower sidewall surface portion 4316L of the sidewall target surface 4312. In this embodiment, the upper sidewall surface portion 316T and the lower sidewall surface portion 4316L of the sidewall target surface 4312 are offset from each other. The lower target surface 4330 of the target plate 4306 abuts between the upper sidewall surface portion 316T and the lower sidewall surface portion 4316L. The lower target surface 314 of the target plate 4306 is adhered to the carrier plate 102 by the adhesive layer 204. The magnetic element 518 is disposed in the target recess 4328 along with the protective element 408.
In one embodiment, the target plate 4306, the protection element 408 and the magnetic element 518 can be simultaneously bonded to the carrier plate 102 by the adhesive layer 204 in the same process step without adding additional manufacturing processes.
In one embodiment, an adhesive layer (not shown) may be optionally disposed between the magnetic element 518, the protection element 408 and the target plate 4306 to adhere to each other, or may be fixed to each other by other suitable bonding means or bonding elements (not shown).
FIG. 5 is a schematic cross-sectional view of a sputter target construction according to a fifth embodiment, the differences from the sputter target construction shown in FIG. 4 being explained as follows. The magnetic element 5518 has an L-shape. The magnetic element 5518 includes a longitudinally extending magnetic portion 3524 and a laterally extending magnetic portion 5526 that are contiguous. The longitudinally extending magnetic portion 3524 is between the sidewall protection surface 420 of the protection member 408 and the lower sidewall surface portion 4316L of the sidewall target surface 4312 of the target plate 4306. The laterally extending magnetic portion 5526 is between the carrying surface 110 of the carrier plate 102 and the lower protective surface 432 of the protective element 408.
In one embodiment, the target plate 4306, the protection element 408 and the magnetic element 5518 can be simultaneously bonded to the carrier plate 102 by the adhesive layer 204 in the same process step without adding additional manufacturing processes.
In one embodiment, an adhesive layer (not shown) may be optionally disposed between adjacent ones of the surfaces of the magnetic element 5518, the protective element 408, and the target plate 4306 to adhere to each other, or may be secured to each other by other suitable bonding means or bonding elements (not shown). The height (or thickness) H32 of the magnetic element 5518 is between 0.1 mm and 0.5 mm.
FIG. 6 is a schematic cross-sectional view of a sputter target construction according to a sixth embodiment, the differences from the sputter target construction shown in FIG. 5 being explained as follows. The magnetic element 3518 includes a longitudinally extending magnetic portion 3524 and a laterally extending magnetic portion 5526 that are contiguous. The laterally extending magnetic portion 5526 is disposed in a position facing away from the protection element 408, and the laterally extending magnetic portion 5526 is disposed between the carrying surface 110 of the carrier plate 102 and the lower target surface 4330 of the target plate 4306. The upper magnetic surface 3526U and the lower magnetic surface 3526G of the laterally extending magnetic portion 3526 are completely encapsulated by the adhesive layer 204.
In one embodiment, the target plate 4306, the protection element 408 and the magnetic element 3518 may be simultaneously bonded to the carrier plate 102 by the adhesive layer 204 in the same process step without adding additional manufacturing processes.
In one embodiment, an adhesive layer (not shown) may be optionally disposed between two adjacent surfaces of the magnetic element 3518, the protection element 408 and the target plate 4306 to adhere to each other, or may be fixed to each other by other suitable bonding means or bonding elements (not shown).
In one embodiment, upper magnetic surface 3526U of laterally extending magnetic portion 3526 is adjacent target plate 4306 and/or lower magnetic surface 3526G of laterally extending magnetic portion 3526 is adjacent carrier plate 102 (not shown).
FIG. 7 is a schematic cross-sectional view of a sputter target structure according to a seventh embodiment, the differences from the sputter target structure shown in FIG. 5 being explained as follows. Magnetic element 7518 includes longitudinally extending magnetic portion 3524 and laterally extending magnetic portion 7526 that are contiguous. Laterally extending magnetic portion 7526 is between lower target surface 4330 of target plate 4306 and upper protective surface 434 of protective element 408. The height (or thickness) H33 of magnetic element 7518 is between 0.1 mm and 0.5 mm.
In one embodiment, an adhesive layer or other bonding means (not shown) can be optionally disposed between the interface of the magnetic element 7518 and the protection element 408.
In one embodiment, the magnetic element 7518 can be bonded to the protection element 408 and then bonded to the carrier 102 by the adhesive layer 204 without additional manufacturing processes.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (14)

1. A sputtering target structure, comprising:
a carrier plate, including a carrying surface;
a target material plate on the bearing surface and including a target material notch; and
a magnetic element disposed in the target recess.
2. A sputtering target structure, comprising:
a carrier plate, including a carrying surface;
a target material plate on the bearing surface and including a target material notch; and
a protection element disposed in the target recess.
3. The sputter target structure of claim 2, further comprising a magnetic element disposed in said target recess with said protective element.
4. The sputter target structure of any of claims 1 to 3, wherein said target notch is located at a lower edge portion of said target plate.
5. The sputtering target structure of one of claims 1 to 3, wherein the target plate comprises a lower target surface and a sidewall target surface, the target recess being defined by the lower target surface and the sidewall target surface.
6. A sputtering target structure, comprising:
a carrier plate, including a carrying surface;
a target plate on the bearing surface and including a sidewall target surface; and
a magnetic element disposed on the surface of the sidewall target.
7. The sputter target structure of claim 6, wherein the target plate has the magnetic elements disposed thereon only on the sidewall target surface.
8. The sputter target structure of claim 6, further comprising a protective element, wherein the magnetic element is between the sidewall target surface and the protective element.
9. The sputter target structure of claim 8, wherein the protective element comprises a sidewall protective surface and a bottom protective surface, the magnetic element comprising a longitudinally extending magnetic portion and a transversely extending magnetic portion adjacent, the longitudinally extending magnetic portion being between the target plate and the sidewall protective surface, the transversely extending magnetic portion being between the carrier plate and the bottom protective surface.
10. The sputter target structure of claim 8, wherein the protective member includes a sidewall protective surface and an upper protective surface, the magnetic member including a longitudinally extending magnetic portion and a transversely extending magnetic portion adjacent, the longitudinally extending magnetic portion being between the target plate and the sidewall protective surface, the transversely extending magnetic portion being between the target plate and the upper protective surface.
11. The sputtering target structure of claim 8 wherein the target plate includes a lower target surface, the protective element includes a sidewall protective surface, the magnetic element includes a longitudinally extending magnetic portion and a laterally extending magnetic portion that are contiguous, the longitudinally extending magnetic portion being between the target plate and the sidewall protective surface, the laterally extending magnetic portion being disposed in a position facing away from the protective element, and the laterally extending magnetic portion being between the carrying surface of the carrier plate and the lower target surface of the target plate.
12. A sputtering target structure, comprising:
a protection element;
a carrier plate, including a carrying surface; and
a target plate on the bearing surface and including at least one sidewall target surface, wherein the target plate has the protective element disposed thereon only on the at least one sidewall target surface.
13. The sputter target structure of claim 12, further comprising a magnetic element disposed between said at least one sidewall target surface and said protective element.
14. The sputter target structure of claim 6 or 13, wherein the magnetic element has an L-shape.
CN202010781370.9A 2020-01-20 2020-08-06 Sputtering target structure Pending CN113106404A (en)

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TW109101943A TWI794579B (en) 2020-01-20 2020-01-20 Sputtering target structure
TW109101943 2020-01-20

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