TWI703229B - Deposition source for sputter deposition, deposition apparatus and method of assembling a deposition source - Google Patents

Abstract

A deposition source (100) for sputter deposition in a vacuum chamber is described.  The deposition source includes a target (110) for providing a material to be deposited during the sputter deposition; an RF power supply (120) for providing RF power to the target (110); a magnetron (130); a power connector assembly (140) connecting the RF power supply (120) with the target (110); a RF power return path assembly (166) for providing a return path from the target to the RF power supply, wherein the power connector assembly (140) and/or the return path assembly (166) has an asymmetric inductive and/or capacitive mass; and a plate (150) arranged a side of the magnetron (130) for compensating the asymmetric inductive and/or capacitive mass.

Description

Deposition source, deposition equipment, and method for assembling deposition source for sputtering deposition

The present invention relates to a deposition source for sputtering deposition, a deposition equipment, and a method of assembling the deposition source. In particular, the present invention relates to a sputtering deposition source for radio frequency (RF) sputtering in a vacuum chamber, and an apparatus for radio frequency (RF) sputtering in a vacuum chamber.

The physical vapor deposition (PVD) process has attracted more and more attention in some technical fields, such as display manufacturing. For some PVD processes, sufficient layer characteristics can achieve a good deposition rate. For example, sputtering can be used in display manufacturing or other applications. Sputtering (such as magnetron sputtering) is a substrate coating technology, such as glass or plastic substrates. Sputtering uses plasma to sputter the target to generate a flow of coating material. In this process, the material is released from the surface of the target by colliding with high-energy plasma particles. Sputtering can be controlled by plasma parameters, such as pressure, power, gas, and magnetic field. Under vacuum, the sputtering material travels from the target toward one or more substrates or workpieces and adheres to the surface. Various materials including metals, semiconductors and dielectric materials can be sputtered to the required specifications. Magnetron sputtering is reported to be used in a variety of applications, including semiconductor processing, optical coatings, food packaging, magnetic recording and protective wear-resistant coatings.

The magnetron sputtering device includes a power source for supplying gas energy and triggering and maintaining plasma, a magnetic element for controlling ion movement, and a target for providing coating material. Sputtering can be done using various devices with different electrical, magnetic and mechanical structures. The configuration includes a direct current (DC) or alternating current (AC) electromagnetic field or radio frequency (RF) energy source to generate plasma. In particular, non-conductive materials can be sputtered using the RF sputtering method.

The RF-PVD phase is used in many applications, such as sputtering non-conductive materials. Sputter coating function usually depends on uniformity and coating thickness. The thickness must be within the predetermined range. When manufacturing the coating, the deposition rate at which the coating is expected to fall within a predetermined tolerance range. In particular, the manufacturing process requires strict control of process parameters, such as plasma uniformity and deposition rate of the sputtering device. However, the conventional deposition source and deposition equipment are still insufficient in the uniformity of the sputtered coating.

Therefore, there is still a need to provide improved deposition sources and deposition equipment.

In view of the above, according to the independent item of the scope of patent application, a deposition source for sputtering deposition in a vacuum chamber, a deposition equipment, and a method of assembling the deposition source are provided. Other advantages, features, aspects and details can be clearly understood from the appended items, implementation methods and drawings of the patent application.

According to an aspect of the present invention, a deposition source for sputtering deposition in a vacuum chamber is provided. The deposition source includes a target material, which is used to provide the material to be deposited during sputtering deposition; an RF power source, which is used to provide RF power to the target material; a magnetron; a power connection component, which connects the RF power source and the target material; an RF power return path Components, used to provide a return path from the target to the RF power supply, wherein the power connection components and/or the return path components have asymmetric induction and/or capacitance quality; and the plate is placed on the side of the magnetron to compensate for Symmetrical induction and/or capacitive quality.

According to another aspect of the present invention, a deposition apparatus is provided. The deposition apparatus includes a vacuum chamber and the deposition source according to the embodiment.

According to another aspect of the present invention, a method of assembling a deposition source is provided. The method includes providing a deposition source. The deposition source includes a target for supplying a material to be deposited during sputter deposition, an RF power supply for providing RF power to the target, a magnetron, and a power connection assembly for connecting the RF power supply and the target , And an RF power backhaul path component for providing a backhaul path from the target to the RF power supply, wherein the power connection component and/or the backhaul path component has asymmetric induction and/or capacitance quality; and the plate is arranged on the magnetron one Side, used to compensate the asymmetric induction and/or capacitive quality of the power connection components and/or the return path components.

The present invention is also directed to equipment for performing the method, including equipment parts for performing the method. The method can be carried out using hardware components, a computer programmed with appropriate software, a combination of any two or other methods. In addition, the present invention also aims at the operation method of the device. The present invention also includes methods for performing each device function.

Each embodiment of the present invention will now be read in detail, and one or more examples of the embodiment are shown in the drawings. In the following descriptions of the figures, the same reference numerals indicate similar parts. Only the differences of individual embodiments are described below. Each example is only provided as an illustration of the present invention, but is not intended to limit the present invention. In addition, part of the characteristic structures shown or described in a certain embodiment may be applied or combined with other embodiments to produce another embodiment. The present invention is intended to include these modifications and changes.

In the present invention, "deposition source" should be understood as a deposition source used for sputtering deposition, including a flat cathode with a target, which is made of a material to be deposited on a substrate. For example, the target material can be selected from metal oxides such as Al ₂ O ₃ or SiO ₂ and includes selected from lithium, tantalum, molybdenum, niobium, titanium, manganese, nickel, cobalt, indium, gallium, zinc, tin, silver and A group of target materials consisting of one or more elements of copper. In particular, the target material is selected from the group consisting of lithium, cobalt, nickel, and manganese.

In the present invention, "RF power supply" should be understood as a power supply suitable for supplying alternating current, which oscillates at radio frequency. In particular, the term "RF power" as used herein refers to the current oscillating at an oscillation rate in the frequency range of 1 MHz to 300 GHz, especially 2 MHz to 1 GHz, and especially AC power at a frequency of 13.56 MHz , Especially 27.12 MHz, more specifically 40.68 MHz or other multiples of 13.56 MHz. In radio frequency (RF) sputtering equipment, an RF electric field is applied to trigger and maintain plasma. For example, by RF sputtering of non-conductive materials to sputtering or sputtering a high resistance (e.g. ¹⁰⁶ ohm cm) material.

When the present invention refers to RF power, RF power, RF matching box, and RF current, it is sometimes referred to as the "hot path" or the "return path." In this regard, it should be understood that the "backhaul path" is comparable to the neutral conductor in the AC network, and the "thermal path" is comparable to the conductor that drives the power of the AC network.

In the present invention, "induction mass" should be understood to include the mass of conductive materials, where the change of current flowing through the induction mass will induce a voltage in the conductive material. "Asymmetric induction mass" should be understood as the induction mass in which the current change flowing through the induction mass will induce an asymmetric voltage in the induction mass. In particular, "asymmetric inductive/capacitive quality" should be understood as the inductive quality has a first part, and the inductive and/or capacitive coupling of the first part is less than the second part of the inductive/capacitive quality. For example, the first part with less inductive and/or capacitive coupling than the second part of inductive/capacitive mass may have a smaller inductive/capacitive mass than the second part of inductive/capacitive mass.

Exemplarily referring to FIG. 1, according to the embodiment, the deposition source 100 for sputtering deposition in a vacuum chamber includes a target 110 for providing materials to be deposited during sputtering deposition; an RF power supply 120 is used After providing RF power to the target 110; the magnetron 130; and the power connection component 140, the RF power supply 120 and the target 110 are connected, wherein the power connection component 140 has asymmetric induction and/or capacitance quality. In addition, the deposition source 100 includes a plate 150, which is placed on the side of the magnetron 130 to compensate for asymmetric induction and/or capacitance quality. Therefore, by providing the deposition source according to the embodiment, the asymmetry induction of the power connection component and/or the capacitance quality induced discharge asymmetry can be compensated, which is beneficial to achieve uniform sputtering coating. In particular, by providing the deposition source 100 including the plate 150, a shunt can be provided to influence the magnetic field strength of the magnetron. Therefore, the plasma density can be beneficially affected, and a uniform plasma density is generated on the target material. In addition, by providing the deposition source including the plate material, the asymmetry of capacitive coupling along the power feeding path and the power return path can be compensated. Furthermore, by providing the deposition source including the plate material, the asymmetric target erosion caused by the asymmetry of the induction and capacitance of the structural part of the deposition system is compensated and the service life of the target material is limited, thereby improving the utilization of the target material in the RF process rate. Therefore, by providing the deposition source including the plate material, the erosion of the asymmetric target material can be reduced or even avoided, and the service life of the target material can be increased.

As shown in exemplary FIG. 2, according to embodiments that can be combined with the other embodiments described above, the magnetron 130 may extend along the longitudinal axis 131. It can be seen from FIG. 2 that the asymmetric induction and/or capacitance quality of the power connection component 140 can be asymmetric with respect to the first plane 132, which perpendicularly bisects the longitudinal axis 131 of the magnetron 130. In addition or alternatively, the asymmetric sensing and/or capacitance quality of the power connection component 140 may be asymmetric with respect to the second plane, which includes the longitudinal axis 131 of the magnetron 130, such as a vertical plane on the second drawing plane. In particular, the second plane may be perpendicular to the first plane 132. Exemplarily referring to Figure 2, according to an embodiment that can be combined with the other embodiments, the plate 150 is placed on one side of the first plane 132, and the asymmetric induction and/or capacitance mass of the power connection component 140 has a smaller induction on this side And/or capacitor quality. In the exemplary embodiment shown in FIG. 2, compared to the second side 132B of the first plane 132, the asymmetric induction and/or capacitance mass of the power connection component 140 is smaller on the first side 132A of the first plane 132 . For example, as shown in FIG. 2, the first side 132A may be the bottom side of the first plane 132, and the second side 132B may be the upper side of the first plane 132. Additionally or alternatively, for example, when the asymmetric induction and/or capacitance mass of the power connection assembly 140 is asymmetric with respect to the second plane including the longitudinal axis 131 of the magnetron 130, the plate 150 is placed on one side of the second plane , The asymmetric induction and/or capacitance mass has a smaller induction and/or capacitance mass on this side.

Therefore, by providing the deposition source with the plate material, the asymmetry induction of the power connection component and/or the capacitance quality induced discharge asymmetry can be compensated. In addition, by providing the deposition source with the plate material, it is possible to compensate for the induction and/or the power connection path (such as power feeding) and the power return path (such as the vacuum chamber body and the return path to the matching box/power supply) Asymmetry of capacitive mass and asymmetry of capacitive coupling. This is beneficial to achieve uniform sputter coating. In particular, by providing the deposition source including the plate material, a shunt can be provided to influence the magnetic field strength of the magnetron. Therefore, the plasma density can be beneficially affected, and a uniform plasma density is generated on the target material.

According to an embodiment that can be combined with the other embodiments, the plate 150 may be arranged above the length of the magnetron 130 which is less than 50%. For example, the plate 150 may be disposed over at least 10% of the length of the magnetron 130 and over less than 50% of the length of the magnetron 130. In particular, the plate 150 may be arranged over at least 20% of the length of the magnetron 130, more particularly over at least 30% of the length of the magnetron 130 and over less than 50% of the length of the magnetron 130. Preferably, as shown in exemplary Figs. 1 and 2, the plate 150 may be disposed above at least 35% of the length of the magnetron 130 and above less than 50% of the length of the magnetron 130. According to an embodiment that can be combined with the other embodiments, as shown in exemplary Figure 2, the plate 150 can be placed on the magnetron 130 so that the plate extends from one end of the magnetron toward the middle of the magnetron, particularly toward First plane 132. Therefore, by providing the deposition source including the plate material, a shunt can be provided to influence the magnetic field strength of the magnetron. Therefore, the plasma density can be beneficially affected, and a uniform plasma density is generated on the target material.

According to embodiments that can be combined with the other embodiments, the plate 150 may be a magnetic plate. Therefore, the plate 150 can be attached to the magnetron 130 by magnetic force. For example, the plate 150 may be directly attached to the magnetron 130. Alternatively, the plate 150 may be coupled to the magnetron by a connecting element, such as a mounting plate and/or screw and/or plug. In this way, the plates used to compensate for the asymmetric induction and/or capacitive mass can be easily placed on or above the magnetron. This facilitates the assembly of the deposition source.

According to an embodiment that can be combined with the other embodiments, the plate 150 includes at least one material selected from the group consisting of iron, magnetic steel, nickel-iron alloy (FeNi), cobalt-iron alloy (FeCo), aluminum-iron alloy ( FeAl), aluminum-silicon-iron alloy (FeAlSi) and sub-ferromagnetics. Therefore, by providing a sheet including the material, the sheet can effectively compensate for asymmetric induction and/or capacitance quality. In addition, the plate can be attached to the magnetron by magnetic force, which facilitates the assembly of the deposition source.

According to embodiments that can be combined with the other embodiments, the thickness of the plate 150 can be selected from a lower limit of 0.5 millimeters (mm) (especially a lower limit of 1 mm, more specifically a lower limit of 2 mm) to an upper limit of 3 mm (especially an upper limit of 4 mm, More specifically, the upper limit is 5 mm). In particular, the thickness of the plate 150 is 1 mm. Therefore, by providing the sheet with the thickness, the sheet can effectively compensate for the asymmetric induction and/or capacitance quality. In addition, according to embodiments that can be combined with the other embodiments, the thickness of the sheet material can be selected to optimize the compensation of the asymmetric induction and/or capacitance quality of the power connection component.

According to an embodiment that can be combined with the other embodiments, the sheet 150 may include at least two sheet stacks, for example, including a first sheet and a second sheet stack. For example, the first sheet and the second sheet may be placed on top of each other. The first thickness of the first plate can be selected from the range of a lower limit of 0.25 mm (especially a lower limit of 0.5 mm, more particularly a lower limit of 1 mm) to an upper limit of 1.5 mm (especially an upper limit of 2 mm, more particularly an upper limit of 2.5 mm). The second thickness of the second plate can be selected from the range of a lower limit of 0.25 mm (especially a lower limit of 0.5 mm, more particularly a lower limit of 1 mm) to an upper limit of 1.5 mm (especially an upper limit of 2 mm, more particularly an upper limit of 2.5 mm). According to embodiments that can be combined with the other embodiments, the first plate and the second plate can have different lengths. For example, the second board placed on the first board may be shorter than the first board. Therefore, by using the sheet stack, the asymmetry of capacitive coupling along the power feeding path and the power return path can be compensated. In particular, the use of sheet stacking, such as stacking sheets of different thicknesses and/or lengths, can modify the compensation effect, especially to optimize the predetermined compensation effect.

According to an embodiment that can be combined with the other embodiments described above, the RF power source 120 can be connected to the power connection assembly 140 by an impedance matching network, especially the matching box 121 shown in the exemplary second FIG. This ensures consistent power load. In addition, the matching box is beneficial to convert the internal resistance of the power supply into the load impedance of the operating cathode. To provide the best impedance matching, the matching box may include adjustable capacitors for balancing. Therefore, the deposition source embodiment can maintain a consistent optimal power load for the deposition source to operate in a power-saving manner.

According to an embodiment that can be combined with the other embodiments, the power connection assembly 140 includes a first power connector 141 that can be connected to the second power connector 142. As shown in exemplary FIG. 2, the inductive and/or capacitive mass of the first power connector 141 may be asymmetric with respect to the first plane 132. Additionally or alternatively, the inductive and/or capacitive quality of the first power connector 141 may be asymmetric with respect to the second plane. The inductive and/or capacitive mass of the second power connector 142 may be symmetric with respect to the first plane 132. As shown in exemplary FIG. 1 and FIG. 2, the second power connector 142 is connected to the target 110. The first power connector 141 can be connected to the second power connector 142 at one end of the first power connector 141, and the other end of the first power connector 141 is connected to the RF power supply 120 by, for example, a matching box 121. Providing a power connection assembly including two or more separate power connectors is beneficial to reduce manufacturing costs. In addition, it helps to assemble the deposition source.

FIG. 3 illustrates a cross-sectional view of the sputtering deposition source according to the embodiment. According to the embodiment, the sputtering deposition source 100 includes a target 110 and a magnetron 130. The magnetron may be a magnet assembly such as provided by a permanent magnet to confine the plasma during sputter deposition. According to an embodiment that can be combined with the other embodiments, as indicated by the arrow in the exemplary FIG. 3, the magnetron 130 may be configured to move on the surface of the target 110 in at least one direction. Therefore, it can beneficially affect the race track on the target, and increase the amount of target material available before replacing the target.

Exemplarily referring to FIG. 3, according to an embodiment that can be combined with the other embodiments, the coupling bridge 143 of the first power connector 141 and the second power connector 142 is arranged and configured to provide a slave RF power source 120 provides a "hot" RF path for RF power to target 110. According to embodiments that can be combined with the other embodiments, as shown in exemplary FIG. 3, the second power connector 142 may be connected to the target 110 by the target back plate 111. For example, the second power connector 142 may be symmetrically connected to the target back plate 111 of the target 110 to provide RF power to the target 110. The first power connector 141 used to connect the second power connector and the power source, such as by a matching box, may be provided by sheet metal. According to an embodiment that can be combined with the other embodiments, the first power connector 141 may be connected to the joint bridge 143, for example, using a screw or a plug.

As shown in exemplary FIG. 3, according to embodiments that can be combined with the other embodiments, the backhaul path may be provided by an RF power backhaul path component 166, which includes, for example, one or more conductor bars 160. According to another embodiment, the conductor rod may be connected to the backhaul path RF power collection plate 161. According to another implementation that can be combined with the other embodiments, the backhaul path RF power collecting plate 161 can be connected to the first power supply plate and the second power supply plate to provide a backhaul path for the RF current to flow to the matching box and/or the power supply.

Fig. 4 illustrates a perspective view of the rear side of the sputtering deposition source according to the embodiment. As shown in exemplary Figure 4, a matching box 121 may be provided to connect to the wall 102 of the vacuum chamber. The matching box 121 may be connected to the first power connector 141. In addition, the matching box 121 can be connected to one or more power supply plates, such as the first power supply plates and 163 shown in FIG. 3 and FIG. 4, to provide an RF current to define a return path. According to an embodiment that can be combined with the other embodiments, the wall 102 of the connection matching box 121 may be a door of the deposition source 100, and the deposition source is connected to the vacuum chamber. Figure 4 shows the door 103 in the open position. As indicated by the arrow in the exemplary figure 4, the door is closed.

Exemplarily referring to Figure 4, according to an embodiment that can be combined with the other embodiments, the first power connector 141 can pivot about a pivot 144, the pivot is parallel to the longitudinal axis 131 of the magnetron, and is used to open and close the first power connector 141. The contact between a power connector 141 and the second power connector 142 is as shown in exemplary FIG. 4. For example, the first power connector 141 may be connected or attached to the gate 103 of the deposition source 100. As shown in FIG. 4, the second power connector 142 may be provided on the back side of the target 110. According to embodiments that can be combined with the other embodiments, as shown in exemplary FIG. 4, the joint bridge 143 may be connected to the second power connector 142. Alternatively, the joint bridge may be a part of the second power connector 142 or the first power connector 141. For example, the second power connector 142 or the first power connector 141 may include a joint bridge 143, particularly in the form of an integral structure.

Figure 5 illustrates an apparatus 200 for sputtering deposition in a vacuum chamber 201. As shown in exemplary FIG. 5, the vacuum chamber 201 can be evacuated via the flange 204. In addition, other flanges can be provided in other positions of the vacuum chamber. As shown in exemplary FIG. 5, the substrate 202 to be coated with the material of the target 110 may be supported by the substrate support 210. Exemplarily referring to FIG. 5, the apparatus 200 for sputtering deposition may include one or more sputtering deposition sources, such as two sputtering deposition sources shown in FIG. For example, a sputtering deposition source may be provided above the substrate 202 to sputter the material of the target 110 from top to bottom. Alternatively, sputter deposition can be configured from bottom to top.

According to another embodiment that can be combined with the other embodiments, the substrate 202 can be placed vertically in a sputtering deposition apparatus. For example, the substrate may be oriented substantially vertically, that is, ±10 degrees from the vertical configuration. Therefore, in this vertical configuration, the sputtering deposition source can be arranged or adjacent to the sidewall of the device 200. In addition, the substrate 202 may be supported by rolls or in a carrier, which is supported by rolls or another transport and/or support system.

As shown in exemplary FIG. 5, each sputtering deposition source 100 may include a power source, particularly an RF power source 120. The power supply can be connected to the matching box 121. The matching box 121 can use various connectors to provide RF power to the target 110, such as the first power connector 141 and/or the second power connector 142 and/or the junction bridge 143. In addition, the defined RF backhaul path may be provided by a conductive rod 160, as shown in exemplary FIG. 5, the conductive rod may be connected to the backhaul path RF power collecting plate 161. The sputtering deposition source 100 may further include a magnetron 130. According to an embodiment that can be combined with the other embodiments, as indicated by the arrow in the exemplary FIG. 5, the magnetron 130 may be configured to move on the surface of the target 110 in at least one direction.

Fig. 6 illustrates a block diagram of a method of assembling a deposition source according to the embodiment. According to an embodiment, the method 300 includes providing (block 310) a deposition source. The deposition source includes a target 110 for supplying materials to be deposited during sputtering deposition; an RF power supply 120 for supplying RF power to the target 110; a magnetron 130; and a power connection assembly 140 for connecting the RF power supply 120 and The target material 110, wherein the power connection component 140 has asymmetric induction and/or capacitance quality. In addition, the method includes arranging the plate 150 (block 320) on the side of the magnetron 130 to compensate for the asymmetric induction and/or capacitance quality of the power connection assembly 140. Therefore, according to the configuration of the plate, a shunt can be provided to influence the magnetic field strength of the magnetron. Therefore, the plasma density can be beneficially affected, and a uniform plasma density is generated on the target material. This is beneficial to achieve uniform sputter coating.

According to an embodiment of a method for assembling a deposition source that can be combined with the other embodiments, configuring (block 320) the plate 150 may include placing the plate Disposed on one side of the first plane 132, the asymmetrical sensing and/or capacitive mass has a smaller sensing and/or capacitive mass on this side. As shown in exemplary FIG. 2, the first plane 132 can bisect the longitudinal axis 131 of the magnetron 130 perpendicularly. Exemplarily referring to FIG. 2, compared to the second side 132B of the first plane 132, the asymmetric induction and/or capacitance mass of the power connection component 140 is smaller on the first side 132A of the first plane 132. Therefore, arranging the plate on the side of the magnetron as described can compensate for the asymmetry induction of the power connection component and/or the asymmetry of the discharge induced by the capacitance quality. This is beneficial to achieve uniform sputter coating.

According to an embodiment of a method of assembling a deposition source that can be combined with the other embodiments, configuring (block 320) the plate 150 may include coupling the plate 150 and the magnetron 130 by magnetic force. For example, the plate 150 may be directly attached to the magnetron 130. Alternatively, the plate 150 may be coupled to the magnetron by a connecting element, such as a mounting plate and/or screw and/or plug.

According to an embodiment of the method of assembling a deposition source that can be combined with the other embodiments, configuring (block 320) the plate 150 may include using a plate and the plate includes at least one material selected from the group consisting of iron, magnetic steel, nickel- Ferroalloy (FeNi), cobalt-iron alloy (FeCo), aluminum-iron alloy (FeAl), aluminum-silicon-iron alloy (FeAlSi) and sub-ferromagnetics. Therefore, by using a plate including the material, the plate can effectively compensate for asymmetric induction and/or capacitance quality. In addition, the plate can be attached to the magnetron by magnetic force, which facilitates the assembly of the deposition source.

According to an embodiment of a method for assembling a deposition source that can be combined with the other embodiments, configuring (block 320) the plate 150 may include using a plate The thickness of the sheet material is selected from the range of a lower limit of 0.5 mm (especially a lower limit of 1 mm, more particularly a lower limit of 2 mm) to an upper limit of 3 mm (especially an upper limit of 4 mm, more particularly an upper limit of 5 mm). Therefore, by using a plate with the thickness, the plate can effectively compensate for asymmetric induction and/or capacitance quality. In addition, according to embodiments that can be combined with the other embodiments, the thickness of the sheet material can be selected to optimize the compensation of the asymmetric induction and/or capacitance quality of the power connection component.

According to an embodiment of a method for assembling a deposition source that can be combined with the other embodiments, configuring (block 320) the plate 150 may include stacking at least two plates, for example, stacking a second plate on the first plate. For example, stacking at least two sheets may include arranging the second sheet onto the first sheet. The first plate may have the first thickness, and the second plate may have the second thickness. According to embodiments that can be combined with the other embodiments, the first plate and the second plate can have different lengths. For example, the second sheet may be shorter than the first sheet. Therefore, by using the sheet stack, the asymmetry of capacitive coupling along the power feeding path and the power return path can be compensated. In particular, the use of sheet stacking, such as stacking sheets of different thicknesses and/or lengths, can modify the compensation effect, especially to optimize the predetermined compensation effect.

According to an embodiment of a method of assembling a deposition source that can be combined with the other embodiments, arranging (block 320) the plate 150 may include arranging the plate 150 above the length of the magnetron 130 that is less than 50%. For example, arranging (block 320) the plate 150 may include arranging the plate at least 10% of the length of the magnetron 130, particularly at least 20% of the length of the magnetron 130, and more particularly at least 30% of the length of the magnetron 130. Magnetron 130 Above the length, and above the length of the magnetron 130 which is less than 50%. Preferably, arranging (block 320) the plate 150 may include arranging the plate above 35% or more of the length of the magnetron 130 and above less than 50% of the length of the magnetron 130. According to an embodiment that can be combined with the other embodiments, configuring (block 320) the plate 150 may include placing the plate on the magnetron so that the plate extends from one end of the magnetron toward the middle of the magnetron, especially toward the first plane. 132. As shown in exemplary Figure 2, the first plane perpendicularly bisects the longitudinal axis 131 of the magnetron 130.

Therefore, arranging the plate on the side of the magnetron as described can compensate for the asymmetry induction of the power connection component and/or the asymmetry of the discharge induced by the capacitance quality. In particular, according to the configuration of the plate, a shunt can be provided to influence the magnetic field strength of the magnetron. Therefore, the plasma density can be beneficially affected, and a uniform plasma density is generated on the target material. This facilitates the use of sputtering to provide a uniform coating on the substrate, especially the use of the deposition source.

100: deposition source

102: Wall

103: door

110: target

111: Backplane

120: RF power supply

121: matching box

130: Magnetron

131‧‧‧Longitudinal axis 132‧‧‧Plane 132A, 132B‧‧‧Side 140‧‧‧Power connection assembly 141,142‧‧‧Power connector 143‧‧‧Joint bridge 144‧‧‧Pivot 150‧‧‧ Plate 160‧‧‧Conductor rod 161, 163‧‧‧Sheet metal 166‧‧‧Return path assembly 200‧‧‧Equipment 201‧‧‧Vacuum chamber 202‧‧‧Substrate 204‧‧‧Flange 210‧‧‧Support 300‧‧‧Method 310, 320‧‧‧Block

In order to make the above-mentioned summary features of the present invention more obvious and understandable, it can be described with reference to the embodiments. The drawings relate to an embodiment of the present invention and are described as follows: Figure 1 illustrates a side view of a deposition source for sputtering deposition in a vacuum chamber according to the embodiment; Figure 2 illustrates according to the embodiment, A side view of a deposition source for sputtering deposition in a vacuum chamber; Fig. 3 illustrates a cross-sectional view of a sputtering deposition source for sputtering deposition in a vacuum chamber according to the embodiment; Fig. 4 illustrates According to the embodiment, a perspective view of the back side of the sputtering deposition source; FIG. 5 illustrates the sputtering deposition apparatus according to the embodiment; and FIG. 6 illustrates a block diagram of the method for assembling the deposition source according to the embodiment Figure.

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100‧‧‧Deposition source

110‧‧‧Target

120‧‧‧RF power supply

130‧‧‧Magnetron

140‧‧‧Power connection assembly

150‧‧‧Plate

Claims (20)

A deposition source (100) for sputtering deposition in a vacuum chamber, the deposition source comprising: a target (110) for providing a material to be deposited during the sputtering deposition; an RF power supply (120) ) For providing an RF power to the target (110); a magnetron (130); a power connection assembly (140) to connect the RF power supply (120) and the target (110); an RF power The backhaul path component (166) is used to provide a backhaul path from the target to the RF power source, wherein the power connection component (140) and/or the backhaul path component (166) has an asymmetric induction and/or capacitance Quality; and a plate (150), placed on one side of the magnetron (130), used to compensate the asymmetric induction and/or capacitance quality. The deposition source (100) according to claim 1, wherein the magnetron (130) extends along a longitudinal axis (131), wherein the asymmetric induction and/or capacitance mass is relative to a first plane (132) Asymmetry, the first plane vertically bisects the longitudinal axis (131) of the magnetron (130), and/or wherein the asymmetric induction and/or capacitance mass is asymmetric with respect to a second plane, the second plane The plane includes the magnetron (130) The longitudinal axis (131); and where the plate (150) is placed on one side of the first plane (132) and/or the second plane, the asymmetric induction and/or capacitive mass has a smaller induction on this side And/or capacitor quality. The deposition source (100) according to claim 1 or 2, wherein the plate (150) is arranged above at least 10% and less than 50% of the length of the magnetron (130). The deposition source (100) according to claim 1 or 2, wherein the plate (150) is a magnetic plate, and the magnetic plate is attached to the magnetron (130) by magnetic force. The deposition source (100) according to claim 3, wherein the plate (150) is a magnetic plate, and the magnetic plate is attached to the magnetron (130) by magnetic force. The deposition source (100) according to claim 1 or 2, wherein the plate (150) comprises at least one material selected from the group consisting of iron, magnetic steel, nickel-iron alloy (FeNi), cobalt-iron alloy ( FeCo), aluminum-iron alloy (FeAl), aluminum-silicon-iron alloy (FeAlSi) and sub-ferromagnetics. The deposition source (100) according to claim 3, wherein the plate (150) comprises at least one material selected from the group consisting of iron, magnetic steel, nickel-iron alloy (FeNi), cobalt-iron alloy (FeCo) , Aluminum-iron alloy (FeAl), aluminum-silicon-iron alloy (FeAlSi) and sub-ferromagnetics. The deposition source (100) according to claim 1 or 2, wherein the power connection assembly (140) includes a first power connector (141) that can be connected to a second power connector (142), wherein the first power connector (142) A power connector (141) has an inductive and/or capacitive mass that is asymmetric with respect to the first plane (132) and/or the second plane, wherein the second power connector (142) has a The plane (132) and/or the second plane is a symmetrical sensing and/or capacitive mass. The deposition source (100) according to claim 3, wherein the power connection component (140) includes a first power connector (141) that can be connected to a second power connector (142), wherein the first power The connector (141) has an inductive and/or capacitive mass that is asymmetric with respect to the first plane (132) and/or the second plane, wherein the second power connector (142) has a relative to the first plane ( 132) and/or the second plane is a symmetrical sensing and/or capacitive mass. The deposition source (100) according to claim 8, wherein the deposition source includes a wall (102) of the vacuum chamber for the first power connector (141) to attach, wherein the second power connector ( 142) is connected to the target (110). The deposition source (100) according to claim 8, wherein the second power connector (142) includes a bonding bridge (143). The deposition source (100) according to claim 10, wherein the second power connector (142) includes a bonding bridge (143). The deposition source (100) according to claim 8, wherein the second power connector (142) is connected to the target (110) by a target backplane (111). The deposition source (100) according to claim 11, wherein the second power connector (142) is connected to the target (110) by a target backplane (111). The deposition source (100) according to claim 10, wherein the wall (102) is a door of the deposition source (100), and the door is connected to the vacuum chamber. The deposition source (100) according to claim 1 or 2, wherein the RF power source (120) is connected to the power connection assembly (140) by a matching box (121). The deposition source (100) according to claim 2, wherein the plate (150) is arranged above at least 10% and less than 50% of the length of the magnetron (130), wherein the plate (150) includes at least two plates The thickness of the at least two plates is 0.25mm to 2.5mm, wherein the power connection assembly (140) includes a first power connector (141) connectable to a second power connector (142), wherein The first power connector (141) can pivot about a pivot (144), the pivot (144) is parallel to the longitudinal axis (131) of the magnetron, and is used to open and close the first power connector (141) A contact with the second power connector (142). A sputtering device (200) includes a vacuum chamber (210) and a deposition source (100) as described in claim 17. A method (300) for assembling a deposition source, the method comprising the following steps: providing (310) a deposition source, the deposition source comprising a target (110) for providing a material to be deposited during sputter deposition; An RF power supply (120) for providing an RF power to the target (110); a magnetron (130); a power connection component (140) for connecting the RF power supply (120) and the target (110) ); and an RF power backhaul path component (166) for providing a backhaul path from the target to the RF power source, wherein the power connection component (140) and/or the backhaul path component (166) has a non Symmetrical induction and/or capacitance quality; and arranging (320) a plate (150) on one side of the magnetron (130) for compensating the power connection component (140) and/or the return path component (166) The quality of the asymmetric induction and/or capacitance. The method according to claim 19, wherein the step of arranging (320) the plate (150) includes the following steps: coupling the plate (150) and the magnetron (130) magnetically.

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