CN113102363A - High-efficiency cleaning process for photomask - Google Patents
High-efficiency cleaning process for photomask Download PDFInfo
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- CN113102363A CN113102363A CN202110488522.0A CN202110488522A CN113102363A CN 113102363 A CN113102363 A CN 113102363A CN 202110488522 A CN202110488522 A CN 202110488522A CN 113102363 A CN113102363 A CN 113102363A
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- Prior art keywords
- photomask
- time
- washing
- parts
- putting
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- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000008569 process Effects 0.000 title claims abstract description 23
- 238000004140 cleaning Methods 0.000 title claims abstract description 21
- 238000005406 washing Methods 0.000 claims abstract description 73
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 43
- 238000001035 drying Methods 0.000 claims abstract description 33
- 239000007788 liquid Substances 0.000 claims abstract description 19
- 239000008367 deionised water Substances 0.000 claims abstract description 18
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 18
- 239000000243 solution Substances 0.000 claims abstract description 10
- 239000012670 alkaline solution Substances 0.000 claims abstract description 9
- 230000001680 brushing effect Effects 0.000 claims abstract description 9
- 238000005507 spraying Methods 0.000 claims abstract description 9
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 24
- LWIHDJKSTIGBAC-UHFFFAOYSA-K tripotassium phosphate Chemical compound [K+].[K+].[K+].[O-]P([O-])([O-])=O LWIHDJKSTIGBAC-UHFFFAOYSA-K 0.000 claims description 16
- 235000013162 Cocos nucifera Nutrition 0.000 claims description 8
- 244000060011 Cocos nucifera Species 0.000 claims description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- 229940051841 polyoxyethylene ether Drugs 0.000 claims description 8
- 229920000056 polyoxyethylene ether Polymers 0.000 claims description 8
- 229910000160 potassium phosphate Inorganic materials 0.000 claims description 8
- 235000011009 potassium phosphates Nutrition 0.000 claims description 8
- 238000002791 soaking Methods 0.000 claims description 8
- 235000019832 sodium triphosphate Nutrition 0.000 claims description 8
- 125000002889 tridecyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 8
- 230000000694 effects Effects 0.000 abstract description 6
- 238000011086 high cleaning Methods 0.000 abstract description 3
- 239000012535 impurity Substances 0.000 abstract description 3
- 150000002500 ions Chemical class 0.000 abstract description 3
- 231100000252 nontoxic Toxicity 0.000 description 2
- 230000003000 nontoxic effect Effects 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/08—Cleaning involving contact with liquid the liquid having chemical or dissolving effect
-
- B08B1/12—
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/02—Cleaning by the force of jets or sprays
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
Abstract
The invention discloses a high-efficiency cleaning process for a photomask, which comprises the following steps: A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time; B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water; C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush; D. spraying the brushed photomask by using alkaline solution; E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time; F. and finally, the photomask is placed in a drying box for low-temperature drying, and the cleaning process adopted by the invention is simple to operate, can effectively remove stains and impurity ions on the surface of the photomask, and has high cleaning efficiency and good effect.
Description
Technical Field
The invention relates to the technical field of photomask cleaning, in particular to a photomask high-efficiency cleaning process.
Background
In the process of making IC by using photomask, pattern is formed on semiconductor by using photolithography technique, and in order to copy the pattern on the wafer, the principle of action of photomask must be passed through, similar to that when developing photo, the negative film is used to copy the image on the photo.
After the photomask is used, the photomask needs to be cleaned, and the cleaning effect of the conventional cleaning process is not good, so that improvement is needed.
Disclosure of Invention
The present invention is directed to a high-efficiency cleaning process for a photomask, so as to solve the problems mentioned in the background art.
In order to achieve the purpose, the invention provides the following technical scheme: a high-efficiency cleaning process for a photomask comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
Preferably, the alkaline washing liquid comprises, by weight, 30-50 parts of water, 5-12 parts of sodium hydroxide, 4-10 parts of potassium phosphate, 3-9 parts of sodium tripolyphosphate, 8-20 parts of tridecyl isomeric alcohol polyoxyethylene ether and 6-12 parts of coconut diethanolamide.
Preferably, the soaking time in the step A is 10min-20 min.
Preferably, the washing time in the step B is 8min-16 min.
Preferably, in the step D, flowing water is adopted for repeatedly washing, the washing frequency is 3-5 times, the washing time is 30min-40min each time, and the interval time between every two adjacent times is 1min-2 min.
Preferably, the low-temperature drying temperature in the step F is 50-60 ℃, and the drying time is 30-50 min.
Compared with the prior art, the invention has the beneficial effects that: the cleaning process adopted by the invention is simple to operate, can effectively remove stains and impurity ions on the surface of the photomask, and has high cleaning efficiency and good effect; the adopted alkaline washing liquid is safe to human bodies, non-toxic, harmless and degradable, and the cleaning effect can be improved by adopting two times of alkaline washing.
Detailed Description
The technical solutions in the embodiments of the present invention are clearly and completely described below, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The first embodiment is as follows:
the invention provides the following technical scheme: a high-efficiency cleaning process for a photomask comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
In the embodiment, the alkaline washing liquid comprises, by weight, 30 parts of water, 5 parts of sodium hydroxide, 4 parts of potassium phosphate, 3 parts of sodium tripolyphosphate, 8 parts of tridecyl isomeric alcohol polyoxyethylene ether and 6 parts of coconut diethanolamide.
In this embodiment, the soaking time in step a is 10 min.
In this embodiment, the rinsing time in step B is 8 min.
In this embodiment, in step D, flowing water is used for repeatedly washing, the washing times are 3 times, the washing time is 30min each time, and the interval time between two adjacent times is 1 min.
In this embodiment, the low-temperature drying temperature in step F is 50 ℃ and the drying time is 30 min.
Example two:
a high-efficiency cleaning process for a photomask comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
In the embodiment, the alkaline washing liquid comprises, by weight, 50 parts of water, 12 parts of sodium hydroxide, 10 parts of potassium phosphate, 9 parts of sodium tripolyphosphate, 20 parts of tridecyl isomeric alcohol polyoxyethylene ether and 12 parts of coconut diethanolamide.
In this embodiment, the soaking time in step a is 20 min.
In this embodiment, the rinsing time in step B is 16 min.
In this embodiment, in step D, flowing water is used for repeatedly washing, the washing times are 5 times, the washing time is 40min each time, and the interval time between two adjacent times is 2 min.
In this embodiment, the low-temperature drying temperature in step F is 60 ℃ and the drying time is 50 min.
Example three:
a high-efficiency cleaning process for a photomask comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
In the embodiment, the alkaline washing liquid comprises, by weight, 35 parts of water, 6 parts of sodium hydroxide, 5 parts of potassium phosphate, 4 parts of sodium tripolyphosphate, 10 parts of tridecyl isomeric alcohol polyoxyethylene ether and 7 parts of coconut diethanolamide.
In this embodiment, the soaking time in step a is 12 min.
In this embodiment, the rinsing time in step B is 9 min.
In this embodiment, in step D, flowing water is used for repeatedly washing, the washing times are 4 times, the washing time is 32min each time, and the interval time between two adjacent times is 1 min.
In this embodiment, the low-temperature drying temperature in step F is 52 ℃, and the drying time is 32 min.
Example four:
a high-efficiency cleaning process for a photomask comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
In the embodiment, the alkaline washing liquid comprises, by weight, 45 parts of water, 10 parts of sodium hydroxide, 9 parts of potassium phosphate, 8 parts of sodium tripolyphosphate, 18 parts of tridecyl isomeric alcohol polyoxyethylene ether and 10 parts of coconut diethanolamide.
In this embodiment, the soaking time in step a is 18 min.
In this embodiment, the rinsing time in step B is 14 min.
In this embodiment, in step D, flowing water is used for repeatedly washing, the washing times are 5 times, the washing time is 38min each time, and the interval time between two adjacent times is 2 min.
In this embodiment, the low-temperature drying temperature in step F is 58 ℃ and the drying time is 45 min.
Example five:
a high-efficiency cleaning process for a photomask comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
In the embodiment, the alkaline washing liquid comprises, by weight, 38 parts of water, 9 parts of sodium hydroxide, 6 parts of potassium phosphate, 7 parts of sodium tripolyphosphate, 12 parts of tridecyl isomeric alcohol polyoxyethylene ether and 10 parts of coconut diethanolamide.
In this embodiment, the soaking time in step a is 14 min.
In this embodiment, the rinsing time in step B is 11 min.
In this embodiment, in step D, flowing water is used for repeatedly washing, the washing times are 4 times, the washing time is 34min each time, and the interval time between two adjacent times is 2 min.
In this embodiment, the low-temperature drying temperature in step F is 54 ℃ and the drying time is 38 min.
Example six:
a high-efficiency cleaning process for a photomask comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
In the embodiment, the alkaline washing liquid comprises, by weight, 40 parts of water, 9 parts of sodium hydroxide, 7 parts of potassium phosphate, 6 parts of sodium tripolyphosphate, 14 parts of tridecyl isomeric alcohol polyoxyethylene ether and 9 parts of coconut diethanolamide.
In this embodiment, the soaking time in step a is 15 min.
In this embodiment, the rinsing time in step B is 12 min.
In this embodiment, in step D, flowing water is used for repeatedly washing, the washing times are 4 times, the washing time is 35min each time, and the interval time between two adjacent times is 2 min.
In this embodiment, the low-temperature drying temperature in step F is 55 ℃, and the drying time is 40 min.
In conclusion, the cleaning process adopted by the invention is simple to operate, can effectively remove stains and impurity ions on the surface of the photomask, and has high cleaning efficiency and good effect; the adopted alkaline washing liquid is safe to human bodies, non-toxic, harmless and degradable, and the cleaning effect can be improved by adopting two times of alkaline washing.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (6)
1. A high-efficiency cleaning process for a photomask is characterized in that: the method comprises the following steps:
A. firstly, putting a photomask into alkaline washing liquid to be soaked for a period of time;
B. then taking the photomask out of the alkaline washing solution, immediately putting the photomask into deionized water, and washing the photomask for a period of time by using flowing water;
C. then taking out the light shield, putting the light shield into a light shield placing plate, and brushing the front side and the back side of the light shield by using a sponge brush;
D. spraying the brushed photomask by using alkaline solution;
E. putting the sprayed photomask into deionized water immediately and repeatedly washing for a period of time;
F. and finally, placing the photomask into a drying oven for low-temperature drying.
2. The process of claim 1, wherein: the alkaline washing liquid comprises, by weight, 30-50 parts of water, 5-12 parts of sodium hydroxide, 4-10 parts of potassium phosphate, 3-9 parts of sodium tripolyphosphate, 8-20 parts of tridecyl isomeric alcohol polyoxyethylene ether and 6-12 parts of coconut diethanolamide.
3. The process of claim 1, wherein: the soaking time in the step A is 10min-20 min.
4. The process of claim 1, wherein: and the washing time in the step B is 8-16 min.
5. The process of claim 1, wherein: and D, repeatedly washing by using flowing water for 3-5 times, wherein the washing time is 30-40 min each time, and the interval time between every two adjacent times is 1-2 min.
6. The process of claim 1, wherein: and F, drying at the low temperature of 50-60 ℃ for 30-50 min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110488522.0A CN113102363A (en) | 2021-05-06 | 2021-05-06 | High-efficiency cleaning process for photomask |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110488522.0A CN113102363A (en) | 2021-05-06 | 2021-05-06 | High-efficiency cleaning process for photomask |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113102363A true CN113102363A (en) | 2021-07-13 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110488522.0A Pending CN113102363A (en) | 2021-05-06 | 2021-05-06 | High-efficiency cleaning process for photomask |
Country Status (1)
| Country | Link |
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| CN (1) | CN113102363A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW508642B (en) * | 2001-10-24 | 2002-11-01 | Taiwan Semiconductor Mfg | Clean method of phase shifting mask |
| TW200725166A (en) * | 2005-12-22 | 2007-07-01 | Advanced Semiconductor Eng | Mask-cleaning apparatus and method of cleaning mask |
| CN102033416A (en) * | 2009-09-27 | 2011-04-27 | 中芯国际集成电路制造(上海)有限公司 | Method for washing light mask |
| CN102078869A (en) * | 2009-11-26 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Photomask cleaning method |
| CN105838507A (en) * | 2016-05-16 | 2016-08-10 | 深圳市路维光电股份有限公司 | Photomask cleaning agent and method |
| CN110449398A (en) * | 2019-07-02 | 2019-11-15 | 成都拓维高科光电科技有限公司 | A kind of mask plate precision regeneration technology and its system |
-
2021
- 2021-05-06 CN CN202110488522.0A patent/CN113102363A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW508642B (en) * | 2001-10-24 | 2002-11-01 | Taiwan Semiconductor Mfg | Clean method of phase shifting mask |
| TW200725166A (en) * | 2005-12-22 | 2007-07-01 | Advanced Semiconductor Eng | Mask-cleaning apparatus and method of cleaning mask |
| CN102033416A (en) * | 2009-09-27 | 2011-04-27 | 中芯国际集成电路制造(上海)有限公司 | Method for washing light mask |
| CN102078869A (en) * | 2009-11-26 | 2011-06-01 | 中芯国际集成电路制造(上海)有限公司 | Photomask cleaning method |
| CN105838507A (en) * | 2016-05-16 | 2016-08-10 | 深圳市路维光电股份有限公司 | Photomask cleaning agent and method |
| CN110449398A (en) * | 2019-07-02 | 2019-11-15 | 成都拓维高科光电科技有限公司 | A kind of mask plate precision regeneration technology and its system |
Non-Patent Citations (3)
| Title |
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| 吕百龄: "《实用工业助剂全书》", 31 August 2001, 化学工业出版社 * |
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Application publication date: 20210713 |
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