CN113098417B - Preparation method of filter and filter - Google Patents
Preparation method of filter and filter Download PDFInfo
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- CN113098417B CN113098417B CN202110341609.5A CN202110341609A CN113098417B CN 113098417 B CN113098417 B CN 113098417B CN 202110341609 A CN202110341609 A CN 202110341609A CN 113098417 B CN113098417 B CN 113098417B
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- 239000010409 thin film Substances 0.000 claims abstract description 130
- 239000000463 material Substances 0.000 claims abstract description 51
- 238000004806 packaging method and process Methods 0.000 claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 claims abstract description 27
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- 238000000034 method Methods 0.000 claims description 30
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- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 1
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
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- UKDIAJWKFXFVFG-UHFFFAOYSA-N potassium;oxido(dioxo)niobium Chemical compound [K+].[O-][Nb](=O)=O UKDIAJWKFXFVFG-UHFFFAOYSA-N 0.000 description 1
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
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- 238000006467 substitution reaction Methods 0.000 description 1
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- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses a preparation method of a filter and the filter. The preparation method of the filter comprises the following steps: providing a substrate comprising a central region and an edge region surrounding the central region; forming at least two thin film resonator units in a central region of the substrate; forming a cavity sacrificial layer covering the thin film resonator unit; growing a packaging layer on the surface of the cavity sacrificial layer far away from the substrate, wherein the packaging layer covers the cavity sacrificial layer and the edge region of the substrate; releasing the cavity sacrificial layer to form a cavity. The embodiment of the invention can save the materials required by the production of the filter, reduce the production period and save the cost.
Description
Technical Field
The embodiment of the invention relates to the technical field of filters, in particular to a preparation method of a filter and the filter.
Background
The filter can effectively filter a certain frequency point or a certain section of frequency to obtain a signal with the frequency meeting the requirement, and has important application in the field of modern electronic technology;
with the development of the integration technology, the miniaturization requirement of the filter is higher and higher; the bulk acoustic wave filter is a miniaturized filter and plays an important role in the field of filters; however, the existing bulk acoustic wave filter is prepared by adopting a bonding mode, so that more raw materials are needed, the production period is longer, the cost is higher, and the further application of the filter is seriously limited.
Disclosure of Invention
The invention provides a preparation method of a filter and the filter, which are used for saving materials required by the production of the filter, reducing the production period and saving the cost.
In a first aspect, an embodiment of the present invention provides a method for manufacturing a filter, including: providing a substrate comprising a central region and an edge region surrounding the central region; forming at least two thin film resonator units in a central region of the substrate; forming a cavity sacrificial layer covering the thin film resonator unit; growing a packaging layer on the surface of the cavity sacrificial layer far away from the substrate, wherein the packaging layer covers the cavity sacrificial layer and the edge region of the substrate; releasing the cavity sacrificial layer to form a cavity.
Optionally, before the forming the cavity sacrificial layer covering the thin film resonator unit, the method further includes: forming a support layer at an edge region of the substrate; the growing and forming of the packaging layer on the surface of the cavity sacrificial layer far away from the substrate comprises the following steps: and growing the packaging layer on the surface of the support layer far away from the substrate and the surface of the cavity sacrificial layer far away from the substrate.
Optionally, the forming at least two thin film resonator units located in the central region of the substrate and the forming a support layer located in the edge region of the substrate include: forming a first electrode layer on the substrate; patterning the first electrode layer to form a first thin film resonator electrode on an acoustic reflection unit located in a central region of a substrate; forming a piezoelectric layer on one side of the first thin film resonator electrode, which is far away from the substrate; forming a second electrode layer overlying the piezoelectric layer; the first thin film resonator electrode, the piezoelectric layer and the second electrode layer form a thin film resonator unit; and removing the part of the second electrode layer positioned in the edge area to form the support layer.
Optionally, after the forming the support layer at the substrate edge region, the method further includes: forming a plurality of release grooves on the support layer; the forming of the cavity sacrificial layer covering the thin film resonator unit further includes: forming a release groove sacrificial layer filling the release groove, wherein the cavity sacrificial layer partially covers the release groove sacrificial layer; the releasing the cavity sacrificial layer includes: forming a release hole at the part of the packaging layer, which is in contact with the release groove sacrificial layer; and releasing the release groove sacrificial layer and the cavity sacrificial layer through the release hole.
Optionally, the plurality of release holes are evenly distributed around the corresponding cavity sacrificial layer.
Optionally, the patterning the first electrode layer further includes: patterning the first electrode layer to form a first support layer at an edge region of the substrate; the first support layer is reused as the groove bottom of the release groove; after releasing the release slot sacrificial layer through the release hole, the method further comprises the following steps: and filling the release holes with conductive materials to form corresponding external electrodes of the thin film resonator units.
Optionally, the forming a cavity sacrificial layer covering the thin film resonator unit includes: forming a sacrificial layer material covering the thin film resonator unit on the whole surface; patterning the sacrificial layer material by a reflow or etching process to form the cavity sacrificial layer.
Optionally, patterning the sacrificial layer material to form the cavity sacrificial layer comprises: patterning the sacrificial layer material to form at least two cavity sacrificial layers corresponding to the at least two thin film resonator units one by one, wherein the surfaces, far away from the thin film resonator units, of the cavity sacrificial layers are ellipsoidal;
alternatively, patterning the sacrificial layer material to form the cavity sacrificial layer comprises: and patterning the sacrificial layer material to form a cavity sacrificial layer covering the at least two thin film resonator units, wherein the surface of the cavity sacrificial layer, which is far away from the thin film resonator units, is an ellipsoid.
In a second aspect, an embodiment of the present invention further provides a filter, where the filter includes: a substrate including a central region and an edge region surrounding the central region; at least two thin film resonator units located in a central region of the substrate; the packaging layer is positioned on one side, far away from the substrate, of the thin film resonator unit, covers the thin film resonator unit, a cavity is formed between the packaging layer and the thin film resonator unit, and the packaging layer is in direct contact with the edge area of the substrate; the surface of the packaging layer facing the thin film resonator unit is an ellipsoid.
Optionally, a support layer is further disposed between the encapsulation layer and the substrate edge region.
Optionally, the supporting layer comprises a release groove, and the release groove is communicated with the cavity; the first electrode layer in the edge area is reused as the groove bottom of the release groove; and the part of the packaging layer which is in sacrificial contact with the release groove is provided with a release hole.
Optionally, the release hole is filled with a conductive material, and the conductive material is in contact with the first electrode layer in the edge region.
According to the technical scheme of the embodiment of the invention, the preparation method of the adopted filter comprises the following steps: providing a substrate, wherein the substrate comprises a central area and an edge area surrounding the central area; forming at least two thin film resonator units in a central region of a substrate; forming a cavity sacrificial layer covering the thin film resonator unit; growing a packaging layer on the surface of the cavity sacrificial layer far away from the substrate, wherein the packaging layer covers the cavity sacrificial layer and the edge area of the substrate; and releasing the cavity sacrificial layer to form a cavity. The encapsulation layer is formed in a growing mode, the encapsulation layer and the substrate are not bonded together in the existing bonding mode and the like, bonding materials required by bonding can be saved, the encapsulation layer substrate required by forming the encapsulation layer before bonding can be saved, materials can be saved, the production period can be shortened, and the cost of the filter can be saved.
Drawings
Fig. 1 is a flowchart of a method for manufacturing a filter according to an embodiment of the present invention;
fig. 2-21 are schematic structural diagrams of products formed by main flow charts of a method for manufacturing a filter according to an embodiment of the present invention;
fig. 22 is a schematic structural diagram of another filter according to an embodiment of the present invention;
fig. 23 is a schematic structural diagram of an electrical connection between a filter and a substrate according to an embodiment of the present invention;
fig. 24 is a schematic structural diagram of an electrical connection between a filter and a substrate according to another embodiment of the present invention;
fig. 25 is a schematic structural diagram of another filter according to an embodiment of the present invention;
fig. 26 is a schematic structural diagram of an electrical connection between a filter and a substrate according to another embodiment of the present invention;
fig. 27 is a schematic structural diagram of another filter according to an embodiment of the present invention;
fig. 28 is a schematic structural diagram of another filter according to an embodiment of the present invention.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.
Fig. 1 is a flowchart of a method for manufacturing a filter according to an embodiment of the present invention, and referring to fig. 1, the method for manufacturing a filter includes:
step S10, providing a substrate, wherein the substrate comprises a central area A and an edge area B surrounding the central area A;
specifically, the substrate may be, for example, silicon, quartz, sapphire, gallium nitride, silicon carbide, or the like; the substrate comprises a central area and an edge area, wherein the central area is positioned in the middle of the substrate and is used for arranging the thin film resonator unit; the edge region is arranged at the edge position of the substrate and is used for arranging a packaging layer; the substrate is provided with an acoustic reflection unit, wherein the acoustic reflection unit can be a Bragg reflection layer specifically, and each Bragg reflection layer corresponds to one thin film resonator unit; alternatively, the acoustic reflection unit may also be a plurality of substrate cavities (to be described later) formed on the substrate, each substrate cavity corresponding to one thin-film resonator unit; the Bragg reflection layer and the substrate cavity can isolate the substrate from the thin film resonator unit, and the performance of the thin film resonator unit is improved.
Step S20 of forming at least two thin film resonator units located in the central region of the substrate;
specifically, the thin film resonator unit may include, for example, a piezoelectric layer and two electrode layers disposed on upper and lower sides of the piezoelectric layer, and when an electric field is applied between the two electrodes, that is, there is a voltage drop between the two electrodes, resonance occurs along a stacking direction (which may be understood as a vertical direction) of the electrodes and the piezoelectric layer, and a frequency of the resonance is related to thicknesses, materials, and the like of the piezoelectric layer and the electrode layers; at least two thin film resonator units can realize signal passing in a certain frequency band in a serial connection or parallel connection mode, and signals in the frequency band do not pass.
Step S30 of forming a cavity sacrificial layer covering the thin film resonator unit;
specifically, the cavity sacrificial layer has the same structure as a cavity which needs to be formed finally, and the cavity is formed finally by releasing the cavity sacrificial layer, and the material of the cavity sacrificial layer may be, for example, PSG (phosphosilicate glass), silicon dioxide, doped silicon dioxide, polysilicon, amorphous silicon, or the like; one or more cavity sacrificial layers are arranged, and when one cavity sacrificial layer is arranged, the cavity sacrificial layer covers all the thin film resonator units, namely, all the thin film resonator units share one cavity in the finally prepared filter; when the number of the cavity sacrificial layers is multiple, each cavity sacrificial layer may correspond to at least one thin film resonator unit, and the number of the thin film resonator units corresponding to each cavity sacrificial layer is not specifically limited in the embodiment of the present invention, and preferably, each cavity sacrificial layer corresponds to one thin film resonator unit.
Step S40, growing a packaging layer on the surface of the cavity sacrificial layer far away from the substrate, wherein the packaging layer covers the edge areas of the cavity sacrificial layer and the substrate;
specifically, the material of the encapsulation layer may be, for example, silicon nitride, which can be grown by a PECVD (Plasma Enhanced Chemical Vapor Deposition) method; the PECVD method utilizes an important characteristic of non-equilibrium plasma, i.e., the plasma, atoms, ions or active groups are the same as the surrounding environment, while non-equilibrium electrons have very small electron mass and the average temperature can be one or two orders of magnitude higher than that of other particles, so that silicon nitride can be grown in a low-temperature environment due to the very high energy of the non-equilibrium electrons, for example, silicon nitride can be grown in a temperature range of 250 to 300 ℃ by using the PECVD method; in other embodiments, for example, if the substrate and the thin film resonator unit have good heat resistance, the encapsulation layer may be grown in other manners. In the embodiment, the packaging layer covers the thin film resonator unit and the edge area of the substrate, so that the thin film resonator unit is isolated from air, and the thin film resonator unit is prevented from being corroded; and the encapsulation layer is formed by a growing mode, the encapsulation layer and the substrate are not bonded together by the existing bonding mode and other modes, so that not only can bonding materials required by bonding be saved, but also the encapsulation layer substrate required by forming the encapsulation layer before bonding can be saved, and therefore, materials can be saved, the production period can be shortened, and the cost of the filter can be saved.
In step S50, the cavity sacrificial layer is released to form a cavity.
Specifically, a release chemical liquid is injected into the cavity sacrificial layer, so that the cavity sacrificial layer is corroded to finally form a cavity, thereby completing the preparation of the filter.
In the technical solution of this embodiment, the method for preparing the filter includes: providing a substrate, wherein the substrate comprises a central area and an edge area surrounding the central area; forming at least two thin film resonator units in a central region of a substrate; forming a cavity sacrificial layer covering the thin film resonator unit; growing a packaging layer on the surface of the cavity sacrificial layer far away from the substrate, wherein the packaging layer covers the cavity sacrificial layer and the edge area of the substrate; and releasing the cavity sacrificial layer to form a cavity. The encapsulation layer is formed in a growing mode, the encapsulation layer and the substrate are not bonded together in the existing bonding mode and the like, bonding materials required by bonding can be saved, the encapsulation layer substrate required by forming the encapsulation layer before bonding can be saved, materials can be saved, the production period can be shortened, and the cost of the filter can be saved.
The foregoing is a core idea of the present invention, and embodiments of the present invention are specifically described below with reference to the accompanying drawings.
Fig. 2-20 are schematic structural diagrams of products formed by main flow charts of a method for manufacturing a filter according to an embodiment of the present invention;
as shown in fig. 2, a substrate 101 is provided; subsequently, as shown in fig. 3, a photoresist 1011 is coated on the substrate 101, and substrate cavities 1012 are formed by exposure, development, and the like, the number and positions of the substrate cavities 1012 being the same as those of the thin film resonator units to be finally formed and corresponding to the positions; as shown in fig. 4, after the substrate cavity 1012 is formed, the remaining photoresist is cleaned away to form the substrate 101 with the substrate cavity 1012; as shown in fig. 5, a substrate cavity sacrificial layer 1013 is filled in the substrate cavity, and the material of the substrate cavity sacrificial layer 1013 may be PSG, silicon dioxide, doped silicon dioxide, polysilicon or amorphous silicon, for example; in this embodiment, a substrate cavity corresponds to each thin film resonator unit, and in other embodiments, a bragg reflective layer may be formed in the substrate cavity.
Optionally, before forming the cavity sacrificial layer covering the thin film resonator unit, the method further includes: forming a support layer at the edge region of the substrate; growing the encapsulation layer on the surface of the cavity sacrificial layer far away from the substrate comprises the following steps: and growing the surface of the support layer far away from the substrate and the surface of the cavity sacrificial layer far away from the substrate to form the packaging layer.
Specifically, if the encapsulation layer is directly grown on the portion of the substrate located at the edge region, a thicker encapsulation layer material needs to be grown at the edge region, which increases the difficulty of growth of the encapsulation layer; in addition, the packaging layer is directly grown on the substrate, so that the contact performance between the substrate and the packaging layer is poor, the sealing performance of the packaging layer is possibly poor, and the service life of the filter is reduced; in this embodiment, a supporting layer may be formed at the edge region of the substrate, and the supporting layer may be a stacked structure of one or more layers, so that on one hand, the thickness of the package layer grown at the edge region can be reduced, thereby reducing the process difficulty and improving the yield of the filter preparation, and on the other hand, a material more suitable for the growth of the package layer can be selected, thereby ensuring the package effect of the package layer and further improving the yield of the filter preparation.
In this embodiment, the support layer is preferably a laminated structure, and more preferably, the electrode layer and the piezoelectric layer constituting the thin film resonator unit are laminated structures.
As shown in fig. 6, forming at least two thin film resonator units located in the central region a of the substrate and forming a support layer located in the edge region B of the substrate includes:
forming a first electrode layer 102 over a substrate 101;
specifically, before forming the first electrode layer 102, a CMP (chemical mechanical polishing) process may be used to polish the substrate cavity sacrificial layer to make the substrate cavity sacrificial layer flush with the surface of the substrate, which is more beneficial for forming the first electrode layer 102, or a buffer layer may be formed on the surface of the substrate and the substrate cavity sacrificial layer, and then the first electrode layer is formed on the buffer layer; the first electrode layer 102 may be formed by deposition, for example, and the material of the first electrode layer 102 may be one or a combination of molybdenum, gold, ruthenium, magnesium, aluminum, tungsten, copper, titanium, iridium, osmium, and chromium, or an alloy thereof, for example. Subsequently, as shown in fig. 7, the first electrode layer 102 may be patterned to form a first thin-film resonator electrode on the acoustic reflection unit in the central area of the substrate, and may further form a first support layer 1021 in the edge area, where the first support layer 1021 may only occupy a part of the edge area, but not all the edge area is provided with the first support layer, the first support layer 1021 may be used for both supporting and subsequently providing a conductive path for the external electrode of the thin-film resonator unit, and when the first support layer 1021 is used for providing a conductive path for the external electrode of the thin-film resonator unit, the first support layer 1021 and the first thin-film resonator electrode 1022 are electrically connected, that is, a part of the first electrode layer material between them is remained; when the first supporting layer does not need to provide a conductive path for the external electrodes of the thin film resonator unit, the first supporting layer can be removed; it should be noted that, in this embodiment, the filter includes two thin film resonator units as an example, in some other embodiments, the first resonator electrodes 1022 of the two thin film resonator units may also be electrically connected, that is, a part of the first electrode layer material remains during etching, and at this time, a parallel connection mode of the two thin film resonator units may be implemented.
Forming a piezoelectric layer on a side of the first thin-film resonator electrode away from the substrate;
specifically, as shown in fig. 8, after patterning the first electrode layer, a piezoelectric layer 103 may be deposited on the surface of the structure shown in fig. 7, and the deposition process may be, for example, magnetron sputtering, MOCVD (metal organic chemical vapor deposition), MBE (molecular beam epitaxy), CBE (chemical molecular beam epitaxy), LPE (liquid phase epitaxy), or the like; the material of the piezoelectric layer may be, for example, a single crystal piezoelectric material such as a single crystal alumina, a single crystal gallium oxide, a single crystal lithium niobate, a single crystal lead zirconate titanate, a single crystal potassium niobate, a single crystal quartz film, or a single crystal lithium tantalate; the material of the piezoelectric layer can also be a polycrystalline piezoelectric material, such as polycrystalline aluminum nitride or zinc oxide; in other embodiments, the material may be a doped material of the rare earth element doped with a certain atomic ratio, such as doped alumina. The part of the piezoelectric layer located in the edge region can be understood as the second support layer.
Subsequently, as shown in fig. 9, a second electrode layer 104 covering the piezoelectric layer is formed, and the material and the forming manner of the second electrode layer 104 are the same as those of the first electrode layer, which is not described herein again. At this time, the first thin-film resonator electrode, the piezoelectric layer, and the second electrode layer constitute a thin-film resonator unit, and a portion of the second electrode layer corresponding to the first thin-film resonator electrode is also the second thin-film resonator electrode of the corresponding thin-film resonator unit.
As shown in fig. 10, a portion of the second electrode layer 104 located at the edge region B is removed to form a thin film resonator unit and a support layer.
Specifically, in this embodiment, a portion of the second electrode layer located in the edge region may be removed, and only a portion corresponding to the position of the thin-film resonator unit and a portion electrically connected between the thin-film resonator units remain in a portion of the second electrode layer located in the central region, so that the support layer formed by the first support layer and the second support layer is formed in the edge region; in this embodiment, the second electrode layers of the two thin film resonator units are electrically connected, that is, the second electrode layers of the two thin film resonator units are electrically connected together; when the packaging layer is formed subsequently, the packaging layer can grow on the part of the piezoelectric layer, which is positioned at the edge area, and the packaging layer is easier to grow because the material of the piezoelectric layer is generally crystal, and the sealing performance between the packaging layer and the piezoelectric layer is better, so that the filter is ensured to have good packaging performance.
As shown in fig. 11, a release chemical solution may be injected into the substrate cavity sacrificial layer to release the substrate cavity sacrificial layer, thereby forming a substrate cavity.
Alternatively, as shown in fig. 12 and 13, fig. 13 may correspond to the top view structure of fig. 12, and further includes, after forming the support layer at the edge region of the substrate: forming a plurality of release grooves 1031 on the support layer; for example, by using a photolithography process, a photoresist layer 1041 is formed first, the photoresist layer 1041 is exposed and developed, and a portion of the piezoelectric layer in the support layer is etched away, thereby forming a release groove; subsequently, as shown in fig. 14 and fig. 15, fig. 15 may correspond to the top structure of fig. 14, the photoresist layer 1041 is removed, and the position of the release trench 1041 corresponds to the first support layer 1021, i.e. the first support layer 1021 reuses the bottom of the release trench 1041;
as shown in fig. 16, the forming of the cavity sacrificial layer covering the thin film resonator element further includes: firstly, forming a sacrificial layer material 105 covering the thin film resonator unit on the whole surface; as shown in fig. 17 and 18, a cavity sacrificial layer 1051 and a release groove sacrificial layer 1052 filling the release groove are formed by etching or reflow, and the cavity sacrificial layer 1051 partially covers the release groove sacrificial layer 1052; the release groove sacrificial layer 1052 and the corresponding cavity sacrificial layer 1051 are of an integral structure, and the cavity sacrificial layer 1051 can be released together when the release groove sacrificial layer 1052 is released.
As shown in fig. 17, an encapsulation layer 106 is grown on the surface of the cavity sacrificial layer away from the substrate, and the encapsulation layer 106 covers the support layer, the release groove sacrificial layer and the cavity sacrificial layer; when the cavity sacrificial layer is multiple, the packaging layer also covers the part between the cavity sacrificial layers;
optionally, the releasing the cavity sacrificial layer comprises:
forming a release hole in the part of the packaging layer, which is in contact with the release groove sacrificial layer;
specifically, as shown in fig. 19, a release hole 1061 may be etched on the surface of the package layer, where the position of the release hole 1061 corresponds to the position of the release slot, and the release hole penetrates through the package layer 106, that is, the bottom wall of the release hole 106 is obtained by multiplexing the release slot sacrificial layer; as shown in fig. 20, when a release drug solution is injected through the release hole, the release groove sacrificial layer and the cavity sacrificial layer in contact with the release groove sacrificial layer are released, thereby forming the structure shown in fig. 20; each thin film resonator unit can correspond to a plurality of release holes, and the release holes are uniformly distributed around the corresponding thin film resonator unit, so that when the sacrificial layer of the liquid medicine release groove and the cavity sacrificial layer are released, the liquid medicine can be uniformly released and flows out of the release holes, no residual phenomenon occurs, and the yield of the filter is further improved. In this embodiment, since the release hole is located in the edge region B, that is, the release hole is not located above the thin film resonator unit, when the release hole is subsequently sealed, the sealing material does not enter the cavity above the thin film resonator unit, so that the yield of the thin film resonator unit can be improved, and the yield of the filter can be improved. The sealing material may for example be the same material as the encapsulation layer, in this embodiment the release hole is preferably filled with a conductive material.
As shown in fig. 21, after releasing the release groove sacrificial layer through the release hole, the method further includes: the release holes are filled with a conductive material 107 to form external electrodes of the corresponding thin film resonator units.
Specifically, the bottom of the release groove is the first electrode layer in the edge region, and the first electrode layer in the edge region is electrically connected to the first electrode layer of the corresponding thin film resonator unit, and at this time, a conductive material, such as PVD deposition, may be deposited in the release hole 107, and the conductive material will be electrically connected to the bottom of the release groove when deposited, that is, the first electrode layer in the edge region, so that the conductive material 107 can serve as both the function of sealing the release hole and the external electrode of the corresponding thin film resonator unit, which further saves materials, reduces the production period, and saves the production cost of the filter. In addition, in the embodiment, since the release hole, the release groove, and the cavity corresponding to the thin film resonator unit form a structure similar to a U shape, after the release hole is sealed, the airtightness of the cavity corresponding to the thin film resonator unit can be effectively ensured.
It should be noted that fig. 22 is a schematic structural diagram of another filter according to an embodiment of the present invention, in this embodiment, the second electrode layer is formed and can be electrically connected to a portion (i.e., the first support layer) of the first electrode layer located in the edge region, so as to connect the second thin-film resonator electrode of the thin-film resonator unit with the external electrode, and provide an electrical signal for the thin-film resonator unit to operate; when the second electrode layer is formed, the second electrode layer and the part of the first electrode layer located in the edge region can be directly and electrically connected; or the second electrode layer is formed first, and after the release groove is formed, a process of forming a connecting metal is performed to electrically connect the second electrode layer and the portion of the first electrode layer located at the edge region.
As shown in fig. 23, fig. 23 is a schematic structural diagram of an electrical connection between a filter and a substrate according to an embodiment of the present invention, after the filter is manufactured, a pad may be manufactured at a position of the conductive material 107, the pad may be formed by deposition through PVD, CVD, ECP (electrochemical deposition), for example, and the pad may be made of one or more metals such as Sn and Ag, and finally, the substrate 301 and the filter may be soldered through, for example, reflow. Alternatively, fig. 24 is a schematic structural diagram of an electrical connection between a filter and a substrate according to another embodiment of the present invention, and as shown in fig. 24, a hole may be formed in a substrate and a conductive material may be deposited, so that the substrate 301 is soldered to a side of the substrate away from the thin film resonator unit.
Optionally, patterning the sacrificial layer material to form the cavity sacrificial layer comprises:
and patterning the sacrificial layer material to form at least two cavity sacrificial layers corresponding to the at least two thin film resonator units one by one, wherein the surfaces of the cavity sacrificial layers far away from the thin film resonator units are ellipsoidal surfaces.
Specifically, as shown in fig. 16, the cavity sacrifice layers 1051 correspond to the thin film resonator units one to one, so that the finally formed cavities correspond to the thin film resonator units one to one; in addition, the surface of the cavity sacrificial layer is an ellipsoid surface, namely the outline of the formed cavity far away from the substrate is in an ellipsoid shape, so that a harmful electric field generated by the thin film resonator unit due to self defects can be reduced, the ESD electrostatic protection capability is improved, the electromechanical coupling caused by the self defects of the thin film resonator unit is reduced, and the effective electromechanical coupling coefficient is finally improved; meanwhile, the ellipsoidal cavity outline can also avoid the harmful electromechanical coupling caused by the parallel surface placement between the thin film layer of the thin film resonator working area and the traditional packaging layer; in addition, the ellipsoidal contour can also make the mechanical vibration resistance stronger, improve the reliability of the filter and prolong the service life.
Alternatively, as shown in fig. 25, fig. 25 is a schematic structural diagram of another filter provided in the embodiment of the present invention, and in a process of forming the filter in the embodiment, the patterning of the sacrificial layer material to form the cavity sacrificial layer includes: and patterning the sacrificial layer material to form a cavity sacrificial layer covering the at least two thin film resonator units, wherein the surface of the cavity sacrificial layer away from the thin film resonator units is an ellipsoid.
Specifically, in this embodiment, all the thin film resonator units share one cavity sacrificial layer, and the cavity sacrificial layer is less difficult to manufacture, which is beneficial to reducing the difficulty in manufacturing the filter. Fig. 26 is a schematic structural diagram of an electrical connection between a filter and a substrate according to another embodiment of the present invention, in which a hole may be formed in the substrate and a conductive material may be deposited, so that the substrate 301 is soldered to a side of the substrate away from the thin film resonator unit.
It should be noted that, in this embodiment, a surface of the cavity sacrificial layer, which is away from the substrate, is taken as an ellipsoid for description, in other embodiments, a surface of the cavity sacrificial layer, which is away from the substrate, may also be parallel to the substrate, as shown in fig. 27, and fig. 27 is a schematic structural diagram of another filter provided in this embodiment of the present invention.
An embodiment of the present invention further provides a filter, as shown in fig. 28, fig. 28 is a schematic structural diagram of another filter provided in the embodiment of the present invention, where the filter includes: a substrate 101, the substrate 101 including a central region a and an edge region B surrounding the central region a; at least two thin film resonator units located in the central region B of the substrate; the packaging layer 106 is positioned on one side, away from the substrate, of the thin film resonator unit, the packaging layer 106 covers the thin film resonator unit, and a cavity 108 is formed between the packaging layer 106 and the thin film resonator unit; the surface of the encapsulation layer 106 facing the thin-film resonator unit is ellipsoidal.
Specifically, in this embodiment, the encapsulation layer 106 directly contacts the substrate at the edge region B, and the encapsulation layer 106 may be formed on the substrate by growth, instead of bonding the encapsulation layer and the substrate together by the existing bonding method, which not only saves the bonding material required by bonding, but also saves the encapsulation layer substrate required by forming the encapsulation layer before bonding, thereby saving the material, reducing the production cycle, and saving the cost of the filter. The filter provided by the embodiment of the invention can be prepared by the preparation method of the filter provided by any embodiment of the invention, and has the effects of saving bonding materials, reducing production period and the like.
Optionally, as shown in fig. 20, a support layer is further disposed between the encapsulation layer and the edge region of the substrate.
Specifically, if the encapsulation layer is directly grown on the portion of the substrate located at the edge region, a thicker encapsulation layer material needs to be grown at the edge region, which increases the difficulty of growth of the encapsulation layer; in addition, the packaging layer is directly grown on the substrate, so that the contact performance between the substrate and the packaging layer is poor, the sealing performance of the packaging layer is possibly poor, and the service life of the filter is reduced; in this embodiment, a supporting layer may be formed at the edge region of the substrate, and the supporting layer may be a stacked structure of one or more layers, so that on one hand, the thickness of the package layer grown at the edge region can be reduced, thereby reducing the process difficulty and improving the yield of the filter preparation, and on the other hand, a material more suitable for the growth of the package layer can be selected, thereby ensuring the package effect of the package layer and further improving the yield of the filter preparation. In this embodiment, the supporting layer is preferably a stacked structure, and more preferably, the electrode layer and the piezoelectric layer that constitute the thin film resonator unit are used as the stacked structure, and the specific structure and the preparation method of the supporting layer may refer to the description of the filter preparation method in this embodiment, and are not described herein again.
Optionally, with continued reference to fig. 20, a release slot is included in the support layer, and the release slot 1031 communicates with the cavity 108; the first electrode layer in the edge region is reused as the groove bottom of the release groove; the part of the packaging layer, which is contacted with the release groove, is provided with a release hole.
Specifically, in this embodiment, since the release hole is located in the edge region B, that is, the release hole is not located above the thin film resonator unit, when the release hole is subsequently sealed, the sealing material does not enter the cavity above the thin film resonator unit, so that the yield of the thin film resonator unit can be improved, and the yield of the filter can be improved. The sealing material may for example be the same material as the encapsulation layer, in this embodiment the release hole is preferably filled with a conductive material. In addition, in the embodiment, since the release hole, the release groove, and the cavity corresponding to the thin film resonator unit form a structure similar to a U shape, after the release hole is sealed, the airtightness of the cavity corresponding to the thin film resonator unit can be effectively ensured.
Optionally, with continued reference to fig. 20, the release hole is filled with a conductive material 107, and the conductive material 107 is in contact with the first electrode layer in the edge region.
In this embodiment, the conductive material 107 can serve as both a sealing release hole and an external electrode of the corresponding thin film resonator unit, thereby further saving material, reducing production cycle, and saving production cost of the filter.
It is to be noted that the foregoing is only illustrative of the preferred embodiments of the present invention and the technical principles employed. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail by the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the spirit of the present invention, and the scope of the present invention is determined by the scope of the appended claims.
Claims (10)
1. A method of making a filter, comprising:
providing a substrate comprising a central region and an edge region surrounding the central region;
forming at least two thin film resonator units in a central region of the substrate;
forming a cavity sacrificial layer covering the thin film resonator unit;
growing a packaging layer on the surface of the cavity sacrificial layer far away from the substrate, wherein the packaging layer covers the cavity sacrificial layer and the edge region of the substrate;
releasing the cavity sacrificial layer to form a cavity;
before the forming of the cavity sacrificial layer covering the thin film resonator unit, the method further comprises:
forming a support layer at an edge region of the substrate;
the forming of the support layer at the edge region of the substrate further comprises:
forming a plurality of release grooves on the support layer;
the forming of the cavity sacrificial layer covering the thin film resonator unit further includes:
forming a release groove sacrificial layer filling the release groove, wherein the cavity sacrificial layer partially covers the release groove sacrificial layer;
the releasing the cavity sacrificial layer includes:
forming a release hole at the part of the packaging layer, which is in contact with the release groove sacrificial layer;
and releasing the release groove sacrificial layer and the cavity sacrificial layer through the release hole.
2. The method of manufacturing a filter according to claim 1,
the growing and forming of the packaging layer on the surface of the cavity sacrificial layer far away from the substrate comprises the following steps:
and growing the packaging layer on the surface of the support layer far away from the substrate and the surface of the cavity sacrificial layer far away from the substrate.
3. The method for manufacturing a filter according to claim 2, wherein the forming at least two thin film resonator units located in a central region of the substrate and forming the support layer located in an edge region of the substrate comprises:
forming a first electrode layer on the substrate;
patterning the first electrode layer to form a first thin film resonator electrode on an acoustic reflection unit located in a central region of a substrate;
forming a piezoelectric layer on one side of the first thin film resonator electrode, which is far away from the substrate;
forming a second electrode layer overlying the piezoelectric layer;
the first thin film resonator electrode, the piezoelectric layer and the second electrode layer form a thin film resonator unit;
and removing the part of the second electrode layer positioned in the edge area to form the support layer.
4. The method of claim 1, wherein the plurality of release holes are evenly distributed around the corresponding cavity sacrificial layer.
5. The method of manufacturing a filter according to claim 1,
patterning the first electrode layer further comprises: patterning the first electrode layer to form a first support layer at an edge region of the substrate;
the first support layer is reused as the groove bottom of the release groove; after releasing the release slot sacrificial layer through the release hole, the method further comprises the following steps:
and filling the release holes with conductive materials to form corresponding external electrodes of the thin film resonator units.
6. The method for manufacturing a filter according to claim 1, wherein the forming of the cavity sacrificial layer covering the thin film resonator unit includes:
forming a sacrificial layer material covering the thin film resonator unit on the whole surface;
patterning the sacrificial layer material by a reflow or etching process to form the cavity sacrificial layer.
7. The method of claim 6, wherein patterning the sacrificial layer material to form the cavity sacrificial layer comprises:
patterning the sacrificial layer material to form at least two cavity sacrificial layers corresponding to the at least two thin film resonator units one by one, wherein the surfaces, far away from the thin film resonator units, of the cavity sacrificial layers are ellipsoidal;
alternatively, patterning the sacrificial layer material to form the cavity sacrificial layer comprises:
and patterning the sacrificial layer material to form a cavity sacrificial layer covering the at least two thin film resonator units, wherein the surface of the cavity sacrificial layer, which is far away from the thin film resonator units, is an ellipsoid.
8. A filter, characterized in that the filter comprises:
a substrate including a central region and an edge region surrounding the central region;
at least two thin film resonator units located in a central region of the substrate;
the packaging layer is positioned on one side, far away from the substrate, of the thin film resonator unit, covers the thin film resonator unit, a cavity is formed between the packaging layer and the thin film resonator unit, and the packaging layer is in direct contact with the edge area of the substrate;
a supporting layer is further arranged between the packaging layer and the edge area of the substrate, a release groove is formed in the supporting layer, and the release groove is communicated with the cavity;
the first electrode layer in the edge area is reused as the groove bottom of the release groove; and a release hole is formed in the part of the packaging layer, which is in contact with the release groove.
9. The filter of claim 8, wherein the surface of the encapsulation layer facing the thin film resonator element is ellipsoidal.
10. The filter of claim 8, wherein the release hole is filled with a conductive material, and wherein the conductive material is in contact with the first electrode layer in the edge region.
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