CN115733462A - Bulk acoustic wave resonator device and manufacturing method thereof - Google Patents
Bulk acoustic wave resonator device and manufacturing method thereof Download PDFInfo
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- CN115733462A CN115733462A CN202211566179.8A CN202211566179A CN115733462A CN 115733462 A CN115733462 A CN 115733462A CN 202211566179 A CN202211566179 A CN 202211566179A CN 115733462 A CN115733462 A CN 115733462A
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Abstract
The invention provides a bulk acoustic wave resonator device and a manufacturing method thereof, belonging to the technical field of semiconductors and microelectronics, and comprising an upper electrode, a piezoelectric layer, a lower electrode, an air cavity, a first supporting layer, a second supporting layer, a silicon substrate cover, a protective layer, a metal ball, a substrate, a first metal hole and a second metal hole; the area surrounded by the lower electrode, the first support layer, the second support layer and the silicon substrate bottom cover is the reflective air cavity on one side of the lower electrode, and compared with a mode of etching the sacrificial layer by using the release holes to form the reflective air cavity, the method has the advantages that the problem of reduction or abnormity of the Q value of the resonator caused by excessive or insufficient etching in the cavity etching process can be solved; meanwhile, the upper electrode protection layer is directly connected with the substrate with the electrical characteristic through the metal ball on the basis of the structure, and the area surrounded by the protection layer, the metal ball and the substrate is a reflecting air cavity above the resonator.
Description
Technical Field
The invention belongs to the technical field of semiconductors and microelectronics, and particularly relates to a bulk acoustic wave resonator device and a manufacturing method thereof.
Background
The typical structure of bulk acoustic wave syntonizer is sandwich structure, the centre is the piezoelectric layer, both sides are the electrode layer about the piezoelectric layer, both sides all need reflect the air cavity and restrict the sound wave in the sandwich about the sandwich, thereby promote syntonizer Q value, and downside air cavity manufacture process is earlier with the air cavity filling sacrificial layer, the sacrificial layer is etched away to rethread release hole, thereby form the air cavity, the air cavity sculpture often appears unclean, or excessive sculpture, and the interface unevenness of sculpture, lead to Q value reduction or performance anomaly, finally lead to the yield to reduce, cost increase. In addition to the cost increase caused by etching the lower air cavity, the upper electrode is often bonded with a layer of silicon to protect the chip surface, which also increases the cost. The invention adopts a new manufacturing method of the reflective air cavity and a new method for protecting the surface of the chip, thereby improving the Q value and reducing the cost.
Disclosure of Invention
In view of the above-mentioned shortcomings in the prior art, the present invention provides a bulk acoustic wave resonator device and a method for manufacturing the same, which solves the problems of low Q value and high cost of a bulk acoustic wave resonator.
In order to achieve the above purpose, the invention adopts the technical scheme that:
the scheme provides a bulk acoustic wave resonator device which comprises an upper electrode, a piezoelectric layer, a lower electrode, an air cavity, a first supporting layer, a second supporting layer, a silicon substrate bottom cover, a protective layer, a metal ball, a substrate, a first metal hole and a second metal hole;
depositing a piezoelectric layer on the upper electrode, depositing a lower electrode on the piezoelectric layer, sequentially depositing a first supporting layer and a second supporting layer on the lower electrode, covering the silicon substrate on the second supporting layer to form an air cavity, depositing a protective layer on the upper electrode, connecting the protective layer with the substrate through metal balls, connecting part of the metal balls with the lower electrode through first metal holes, connecting part of the metal balls with the upper electrode through second metal holes, and arranging concave bosses on the lower electrode;
the area surrounded by the lower electrode, the first supporting layer, the second supporting layer and the silicon substrate cover is a reflecting air cavity at one side of the lower electrode; the area surrounded by the protective layer, the metal balls and the substrate is a reflecting air cavity above the resonator.
The beneficial effects of the invention are: based on the structure, the forming mode of the reflecting air cavity at one side of the lower electrode is as follows: the method has the advantages that the problem that the Q value of a resonator is reduced or abnormal due to over-etching or under-etching in the cavity etching process can be solved; meanwhile, the upper electrode protection layer is directly connected with the substrate with electrical characteristics through the metal balls on the basis of the structure, and the area surrounded by the protection layer, the metal balls and the substrate is an upper reflecting air cavity.
Furthermore, bosses are arranged on the lower electrode in a circle at the periphery of the resonator, the thickness of each boss is 500-2500um, and the width of each boss is 0-10um; the lower electrode is provided with a groove in the inner ring of the resonator close to the boss, the depth of the groove is 20-300um, and the width of the groove is 0-10um.
The beneficial effects of the further scheme are as follows: according to the invention, the concave boss is arranged, so that sound waves are bound in the longitudinal direction of the resonator, transverse waves are reduced, and the Q value of the resonator is improved.
Still further, the upper electrode, the lower electrode, the metal ball, the first metal hole and the second metal hole are made of at least one of molybdenum, copper, tungsten, gold, ruthenium and/or tin, the piezoelectric layer is made of at least one of AlN, scAlN, znO and/or PZT, the first supporting layer is made of SiN, the second supporting layer is made of SiO2, the protective layer is made of ALN or SiN, and the substrate is a multilayer resin carrier plate or ceramic carrier plate.
The present invention also provides a method of manufacturing a bulk acoustic wave resonator device, the method comprising:
s1, preparing a temporary silicon substrate, and depositing a seed layer on the temporary silicon substrate;
s2, depositing an upper electrode on the seed layer;
s3, depositing a piezoelectric layer on the upper electrode;
s4, depositing a lower electrode on the piezoelectric layer;
s5, depositing a first supporting layer on the lower electrode;
s6, depositing a second supporting layer on the lower electrode;
s7, etching the first supporting layer and the second supporting layer;
s8, etching the lower electrode to obtain the thickness of the resonator;
s9, etching a groove on the lower electrode;
s10, continuously etching the lower electrode, and separating different resonators;
s11, bonding a silicon substrate cover on the second supporting layer to form an air cavity;
s12, turning the structure manufactured in the step S11 up and down, etching the silicon substrate bottom cover and the seed layer away, and exposing the upper electrode;
s13, etching the upper electrode to form a required pattern;
s14, depositing a protective layer on the upper electrode;
s15, etching the first metal hole and the second metal hole, wherein the first metal hole is connected with the upper electrode and the lower electrode;
s16, filling a conductive material in the etched hole, and depositing pad on the surface of the protective layer;
s17, implanting metal balls into the pad, bonding the pad and the substrate, and forming the bulk acoustic wave resonator.
The invention has the beneficial effects that: the method comprises the steps of sequentially depositing a seed layer, an upper electrode, a piezoelectric layer, a lower electrode and two support layers on a temporary silicon substrate, etching the redundant support layers, etching the lower electrode layer, and adding a silicon cover on the support layers to form a bottom air reflection cavity; and etching the temporary silicon substrate and the seed layer, etching after exposing the upper electrode, depositing a protective layer, continuously etching the connecting hole, filling a metal material into the hole, planting balls, and finally bonding with the substrate.
Drawings
Fig. 1 is a top view of a prior art bulk acoustic wave resonator.
Fig. 2 is a side view of a prior art bulk acoustic wave resonator.
Fig. 3 is a partially enlarged view of a dotted line portion in fig. 2.
Fig. 4 is a side view block diagram of the bulk acoustic wave resonator of the present invention.
Fig. 5 is a partially enlarged view of a dotted line portion in fig. 4.
FIG. 6 is a flow chart of the method of the present invention.
Fig. 7 is a schematic view of a silicon substrate in this embodiment.
Fig. 8 is a schematic diagram of a seed layer deposited on a silicon substrate in this embodiment.
FIG. 9 is a schematic diagram of an upper electrode deposited on the seed layer in this embodiment.
Fig. 10 is a schematic diagram of a piezoelectric layer deposited on the upper electrode in this embodiment.
FIG. 11 is a schematic diagram of a lower electrode deposited on a piezoelectric layer in this embodiment.
FIG. 12 is a schematic diagram of the deposition of a second support layer on the lower electrode in this embodiment.
FIG. 13 is a schematic view illustrating the deposition of a first supporting layer on the bottom electrode in this embodiment.
Fig. 14 is a schematic diagram illustrating etching performed on the first support layer and the second support layer in this embodiment.
Fig. 15 is a schematic diagram illustrating the thickness of the resonator etched on the lower electrode in this embodiment.
Fig. 16 is a schematic diagram illustrating a groove etched in the lower electrode according to this embodiment.
Fig. 17 is a schematic diagram of the resonator separated by etching the lower electrode in this embodiment.
Fig. 18 is a schematic view of an air cavity formed in the present embodiment.
Fig. 19 is a schematic view of the exposed upper electrode in the present embodiment.
FIG. 20 is a schematic diagram of etching a desired pattern on the electrode according to the present embodiment.
FIG. 21 is a schematic diagram illustrating the deposition of a passivation layer on the upper electrode in this embodiment.
Fig. 22 is a schematic diagram illustrating the etching of the first metal hole and the second metal hole in the present embodiment.
FIG. 23 is a schematic view illustrating the deposition of connection pads on the surface of the passivation layer in this embodiment.
FIG. 24 is a schematic view illustrating the implantation of metal balls in the present embodiment.
Fig. 25 is a schematic diagram of the complete bulk acoustic wave resonator formed in this embodiment.
The structure comprises an upper electrode 1, a piezoelectric layer 2, a lower electrode 3, an air cavity 4, a first support layer 5, a second support layer 6, a silicon substrate cover 7, a protective layer 8, a metal ball 9, a substrate 10, a first metal hole 11, a second metal hole 12, a seed layer 13, a release hole 14, a reflective air cavity 15, a connecting through hole 16, a metal hole 17, a protective cap 18 and a temporary silicon substrate 19.
Detailed Description
The following description of the embodiments of the present invention is provided to facilitate the understanding of the present invention by those skilled in the art, but it should be understood that the present invention is not limited to the scope of the embodiments, and it will be apparent to those skilled in the art that various changes may be made without departing from the spirit and scope of the invention as defined and defined by the appended claims, and all changes that can be made by the invention using the inventive concept are intended to be protected.
Example 1
Fig. 1 is a top view of a bulk acoustic wave resonator according to the prior art, in which 1 is an upper electrode, 3 is a lower electrode, a piezoelectric layer 2 is disposed between the upper and lower electrodes, not shown for simplicity, and 14 is a release hole, through which a sacrificial layer filled in a reflective air cavity of a silicon substrate is etched to form a reflective air cavity, wherein AB represents an AB dashed line, and fig. 2 is a side view cut along the AB dashed line.
Figure 2 is a side view of a prior art bulk acoustic wave resonator. In the figure, 7 is a silicon substrate cover, a sacrificial layer is deposited in a reflective air cavity 15 on the upper surface of the silicon substrate cover 7, 13 is a seed layer, sio2 and 2 are piezoelectric layers, the material is metal such as molybdenum, 1 is upper electrode molybdenum, and 8 is a protective layer. The protective layer needs to be etched away through the release holes 14 to form the reflective air cavities 15 (the release holes 14 penetrate through the protective layer), but this method may over-etch or under-etch, resulting in a reduced Q value of the resonator, a reduced yield, and an increased cost. And 17 is a gold or copper connecting metal hole filled after etching, and is connected to the lower electrode or the upper electrode according to requirements. And the manufacture of the bulk acoustic wave resonator bare chip is finished. Next, a protective cap 18 filled with a metal hole 17 of gold or copper is flipped over the resonator, on the one hand to protect the resonator surface and on the other hand to form a reflective air cavity on the upper side of the resonator. And then the substrate 10 is connected together through the metal balls 9, and at this time, the bare chip, the protective cap 18 and the substrate 10 form a complete bulk acoustic wave filter chip.
Fig. 3 is a partially enlarged view of the dotted line frame in fig. 2, in which the overlapped portion of the reflective air cavity 15, the upper electrode 1 and the lower electrode 3 is the effective region of the bulk acoustic wave resonator.
In this embodiment, as shown in fig. 4, the present invention provides a bulk acoustic wave resonator device, which includes an upper electrode 1, a piezoelectric layer 2, a lower electrode 3, an air cavity 4, a first support layer 5, a second support layer 6, a silicon substrate cover 7, a protective layer 8, a metal ball 9, a substrate 10, a first metal hole 11, and a second metal hole 12;
depositing a piezoelectric layer 2 on the upper electrode 1, depositing a lower electrode 3 on the piezoelectric layer 2, sequentially depositing a first supporting layer 5 and a second supporting layer 6 on the lower electrode 3, covering the second supporting layer 6 with a silicon substrate cover 7 to form an air cavity 4, depositing a protective layer 8 on the upper electrode 1, connecting the protective layer 8 with a substrate 10 through a metal ball 9, connecting part of the metal ball 9 with the lower electrode 3 by penetrating through a first metal hole 11, connecting part of the metal ball 9 with the upper electrode 1 by penetrating through a second metal hole 12, and arranging a concave boss on the lower electrode 3; the area surrounded by the lower electrode 3, the first supporting layer 5, the second supporting layer 6 and the silicon substrate bottom cover 7 is a reflecting air cavity at one side of the lower electrode 3; the area enclosed by the protective layer 8, the metal balls 9 and the substrate 10 is a reflective air cavity above the resonator.
In this embodiment, the upper electrode 1, the lower electrode 3, the metal ball 9, the first metal hole 11, and the second metal hole 12 are made of at least one of molybdenum, copper, tungsten, gold, ruthenium, and/or tin, the piezoelectric layer 2 is made of at least one of AlN, scAlN, znO, and/or PZT, the first support layer 5 is an SiN material, the second support layer 6 is an SiO2 material, the protective layer is an AlN or SiN material, and the substrate 10 is a multilayer resin carrier or a ceramic carrier.
In the present embodiment, as shown in fig. 4, a projection overlapping area L of the upper electrode 1, the piezoelectric layer 2, the lower electrode 3 (these three are typical sandwich structures), and the air cavity 4 is an effective area of the resonator, wherein a material of the electrode layer is a metal such as molybdenum, copper, tungsten, and the like, and the piezoelectric layer 2 is a piezoelectric material such as ALN, scALN, PZT, and the like. The key point of the invention is that a release hole is not adopted, but a first supporting layer 5 and a second supporting layer 6 are sequentially deposited on the lower electrode 3, the material of the second supporting layer 6 is SiN, and the first supporting layer 5 is SiO2. And then the second support layer 6 is covered with a silicon substrate cover 7 with a flat surface (here, the film layer is a film which is long from top to bottom), so that the problem of over-etching or under-etching does not exist. Another key point is that the protective cap 19 is not required, but is directly connected to the substrate 10 (the substrate is a multilayer resin carrier or a ceramic carrier) through the metal balls 9 (the material is gold, tin-silver, copper, etc.) on the protective layer 8 (the material is ALN or SiN, etc.), a portion of the metal balls 9 are connected to the lower electrode 3 through the first metal holes 11 (the material is gold, copper, etc.), and a portion of the metal balls 9 are connected to the upper electrode 1 through the second metal holes 12 (the material is gold, copper, etc.). The air cavity 4 between the protective layer 8 and the substrate 10 then forms a reflective air cavity over the resonator, reducing the cost of the protective cap directly by at least 10%, the interrelationship between the stacks being shown in figure 4.
In this embodiment, as shown in fig. 5, fig. 5 is an enlarged view of a dashed box in fig. 4, in the prior art, a plurality of concave-convex platforms are arranged on the surface of an upper electrode 1, according to the present invention, the concave-convex platforms are arranged on a lower electrode 3, the actual thickness of the lower electrode 3 is H3, the convex platforms are arranged around the resonator, the height of the convex platforms is H1, generally 500-2500um thick, the width of the convex platforms is W1, generally 0-10um, a circle of grooves is arranged on the inner ring next to the convex platforms, the depth of the grooves is H2, generally 20-300um, the width of the grooves is W2, generally 0-10um, and l represents the effective area of the resonator.
Based on the structure, the area surrounded by the lower electrode, the first supporting layer, the second supporting layer and the silicon substrate bottom cover is the reflecting air cavity at one side of the lower electrode, and compared with a mode of etching the sacrificial layer by using the release holes to form the reflecting air cavity, the invention has the advantages that the problem of reduction or abnormity of the Q value of the resonator caused by excessive or insufficient etching in the cavity etching process can be solved; meanwhile, the upper electrode protection layer is directly connected with the substrate with electrical characteristics through the metal ball on the basis of the structure, and the area surrounded by the protection layer, the metal ball and the substrate is a reflection air cavity above the resonator.
Example 2
As shown in fig. 6, the present invention provides a method of manufacturing a bulk acoustic wave resonator device, the method comprising:
s1, as shown in FIGS. 7-8, preparing a temporary silicon substrate 19, and depositing a seed layer 13 on the temporary silicon substrate 19;
s2, as shown in the figure 9, depositing an upper electrode 1 on the seed layer 13;
s3, as shown in FIG. 10, depositing a piezoelectric layer 2 on the upper electrode 1;
s4, as shown in FIG. 11, depositing a lower electrode 3 on the piezoelectric layer 2;
s5, as shown in figure 12, depositing a second supporting layer 6 on the lower electrode 3;
s6, as shown in figure 13, depositing a first supporting layer 5 on the lower electrode 3;
s7, as shown in the figure 14, etching the first supporting layer 5 and the second supporting layer 6;
s8, as shown in FIG. 15, etching the lower electrode 3 to the thickness of the resonator;
s9, as shown in figure 16, etching a groove on the lower electrode 3;
s10, as shown in figure 17, continuously etching the lower electrode 3 to separate different resonators;
s11, as shown in FIG. 18, bonding a silicon substrate cover 7 on the second supporting layer 6 to form an air cavity 4;
s12, as shown in FIG. 19, the structure manufactured in the step S11 is turned upside down, and the silicon substrate cover 7 and the seed layer 13 are etched away to expose the upper electrode 1;
s13, as shown in the figure 20, etching the upper electrode 1 to form a required pattern;
s14, as shown in figure 21, depositing a protective layer 8 on the upper electrode 1;
s15, as shown in FIG. 22, etching the first metal hole 11 and the second metal hole 12, wherein the second metal hole 12 is connected with the upper electrode 1, and the first metal hole 11 is connected with the lower electrode 3;
s16, as shown in fig. 23, filling a conductive material in the etched hole, and depositing a pad on the surface of the protective layer 8, where the pad indicates that after the conductive material is filled, the protective layer 8 is flush with the conductive material, and the conductive material needs to be continuously deposited at a position where the conductive material is located and higher than the protective layer 8, and the pad is circular or square in shape, and functions to better connect the through hole and the metal ball;
s17, as shown in fig. 24 to 25, metal balls 9 are implanted in the pad and bonded to the substrate 10, thereby forming a bulk acoustic wave resonator.
The method comprises the steps of sequentially depositing a seed layer 13, an upper electrode 1, a piezoelectric layer 2, a lower electrode 3 and two support layers on a temporary silicon substrate, etching the redundant support layers, etching the lower electrode 3, and adding a silicon substrate cover 7 on the support layers to form a bottom air reflection cavity; and then the silicon substrate 7 and the seed layer 13 are etched, the upper electrode 1 is exposed and then etched, the protective layer 8 is deposited, then the connecting through hole 16 is continuously etched, the connecting through hole 16 is filled with metal materials and then implanted with the metal ball 9, and finally bonded with the substrate 10.
Claims (4)
1. A bulk acoustic wave resonator device is characterized by comprising an upper electrode (1), a piezoelectric layer (2), a lower electrode (3), an air cavity (4), a first supporting layer (5), a second supporting layer (6), a silicon substrate cover (7), a protective layer (8), a metal ball (9), a substrate (10), a first metal hole (11) and a second metal hole (12);
depositing a piezoelectric layer (2) on the upper electrode (1), depositing a lower electrode (3) on the piezoelectric layer (2), sequentially depositing a first supporting layer (5) and a second supporting layer (6) on the lower electrode (3), covering the second supporting layer (6) with a silicon substrate cover (7) to form an air cavity (4), depositing a protective layer (8) on the upper electrode (1), connecting the protective layer (8) with a substrate (10) through a metal ball (9), connecting part of the metal ball (9) with the lower electrode (3) through a first metal hole (11), connecting part of the metal ball (9) with the upper electrode (1) through a second metal hole (12), and arranging a concave boss on the lower electrode (3);
the area surrounded by the lower electrode (3), the first supporting layer (5), the second supporting layer (6) and the silicon substrate cover (7) is a reflecting air cavity at one side of the lower electrode (3); and the area surrounded by the protective layer (8), the metal ball (9) and the substrate (10) is a reflective air cavity above the resonator.
2. The bulk acoustic wave resonator device according to claim 1, characterized in that the lower electrode (3) is provided with a boss around the periphery of the resonator, the boss has a thickness of 500-2500um, the boss has a width of 0-10um; the lower electrode (3) is provided with a groove in the inner ring of the resonator close to the boss, the depth of the groove is 20-300um, and the width of the groove is 0-10um.
3. The bulk acoustic wave resonator device according to claim 1, wherein the material used for the upper electrode (1), the lower electrode (3), the metal ball (9), the first metal hole (11), and the second metal hole (12) is at least one of molybdenum, copper, tungsten, gold, ruthenium, and/or tin, the material used for the piezoelectric layer (2) is at least one of AlN, scAlN, znO, and/or PZT, the first support layer (5) is SiN material, the second support layer (6) is SiO2 material, the protective layer is AlN or SiN material, and the substrate (10) is a multilayer resin carrier or ceramic carrier.
4. A method of manufacturing a bulk acoustic wave resonator device according to any of claims 1 to 3, characterized in that the method of manufacturing comprises:
s1, preparing a temporary silicon substrate (19), and depositing a seed layer (13) on the temporary silicon substrate (19);
s2, depositing an upper electrode (1) on the seed layer (13);
s3, depositing a piezoelectric layer (2) on the upper electrode (1);
s4, depositing a lower electrode (3) on the piezoelectric layer (2);
s5, depositing a first supporting layer (5) on the lower electrode (3);
s6, depositing a second supporting layer (6) on the lower electrode (3);
s7, etching the first supporting layer (5) and the second supporting layer (6);
s8, etching the lower electrode (3) to obtain the thickness of the resonator;
s9, etching a groove on the lower electrode (3);
s10, continuously etching the lower electrode (3) and separating different resonators;
s11, bonding a silicon substrate cover (7) on the second supporting layer (6) to form an air cavity (4);
s12, turning the structure manufactured in the step S11 up and down, etching the silicon substrate cover (7) and the seed layer (13) away, and exposing the upper electrode (1);
s13, etching a required pattern on the upper electrode (1);
s14, depositing a protective layer (8) on the upper electrode (1);
s15, etching the first metal hole (11) and the second metal hole (12), wherein the first metal hole (12) is connected with the upper electrode (1), and the first metal hole (11) is connected with the lower electrode (3);
s16, filling a conductive material in the etched hole, and depositing pad on the surface of the protective layer (8);
s17, implanting metal balls (9) on the pads, bonding the pads with the substrate (10) and forming the bulk acoustic wave resonator.
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| CN117424576A (en) * | 2023-11-03 | 2024-01-19 | 武汉敏声新技术有限公司 | Bulk acoustic wave resonator and preparation method thereof |
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