CN111200410B - Wafer-level packaging structure of acoustic wave device and preparation method thereof - Google Patents
Wafer-level packaging structure of acoustic wave device and preparation method thereof Download PDFInfo
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- 238000004806 packaging method and process Methods 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 25
- 238000000034 method Methods 0.000 claims abstract description 75
- 229910052751 metal Inorganic materials 0.000 claims abstract description 49
- 239000002184 metal Substances 0.000 claims abstract description 49
- 238000005530 etching Methods 0.000 claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 claims description 27
- 238000003825 pressing Methods 0.000 claims description 11
- 238000001259 photo etching Methods 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- 238000009713 electroplating Methods 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 238000004026 adhesive bonding Methods 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000004642 Polyimide Substances 0.000 claims description 5
- 229920002120 photoresistant polymer Polymers 0.000 claims description 5
- 229920001721 polyimide Polymers 0.000 claims description 5
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 235000012431 wafers Nutrition 0.000 description 110
- 239000010408 film Substances 0.000 description 89
- 239000000463 material Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 8
- 239000004033 plastic Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 6
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- 239000012467 final product Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 230000006835 compression Effects 0.000 description 3
- 238000007906 compression Methods 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 239000000047 product Substances 0.000 description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052718 tin Inorganic materials 0.000 description 2
- 239000011135 tin Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- ONBQEOIKXPHGMB-VBSBHUPXSA-N 1-[2-[(2s,3r,4s,5r)-3,4-dihydroxy-5-(hydroxymethyl)oxolan-2-yl]oxy-4,6-dihydroxyphenyl]-3-(4-hydroxyphenyl)propan-1-one Chemical compound O[C@@H]1[C@H](O)[C@@H](CO)O[C@H]1OC1=CC(O)=CC(O)=C1C(=O)CCC1=CC=C(O)C=C1 ONBQEOIKXPHGMB-VBSBHUPXSA-N 0.000 description 1
- WSMQKESQZFQMFW-UHFFFAOYSA-N 5-methyl-pyrazole-3-carboxylic acid Chemical compound CC1=CC(C(O)=O)=NN1 WSMQKESQZFQMFW-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 229940126142 compound 16 Drugs 0.000 description 1
- 238000007731 hot pressing Methods 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000011185 multilayer composite material Substances 0.000 description 1
- 229910052755 nonmetal Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 238000000427 thin-film deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
- H03H2003/023—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the membrane type
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- Engineering & Computer Science (AREA)
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- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a wafer-level packaging structure of an acoustic wave device and a preparation method thereof, wherein the method comprises the following steps: arranging an acoustic wave device on the upper surface of a carrier wafer, covering a first film layer on the upper surface of the carrier wafer, and etching the first film layer at a preset position to form a wall structure, wherein the preset position comprises a first preset position and a second preset position, the first preset position is a position where the acoustic wave device is located, and the second preset position is a position of a bonding pad for leading out the acoustic wave device; covering a second film layer above the wall structure, and etching off the second film layer at a second preset position to form a roof structure; and filling a conducting layer at a second preset position to obtain a bonding pad leading-out part of the acoustic wave device, and arranging a metal bonding pad above the bonding pad leading-out part to obtain a wafer-level packaging structure of the acoustic wave device. According to the technical scheme disclosed by the application, the preparation process of the wafer-level packaging structure of the acoustic wave device can be simplified, and the preparation cost of the wafer-level packaging structure of the acoustic wave device is reduced.
Description
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer-level packaging structure of an acoustic wave device and a preparation method thereof.
Background
Because the sound wave can be totally reflected when meeting air or a vacuum interface, the energy can be reflected back without loss, and therefore, the sound wave devices such as a filter and the like designed by adopting the sound wave technology have extremely excellent performance. Currently, the number of acoustic wave filters/duplexers in known smart phones has exceeded 40.
To achieve the required air or vacuum interface, wafer level packaging techniques are required for acoustic wave devices. At present, the wafer level packaging structure of the acoustic wave device is usually prepared by the following method: preparing two wafers (one wafer is used as a carrier wafer, and the other wafer is used as a cap wafer), placing the acoustic wave device on the carrier wafer, and hollowing the cap wafer at a position corresponding to the acoustic wave device; then, materials for bonding are placed on the carrier wafer and the cap wafer, and wafer bonding is carried out under the high-temperature and vacuum environment to form a closed cavity; then, a TSV (Through Silicon Via) technique is used to lead out the pin, and finally, a metal bump connected to the pin is prepared to obtain the structure shown in fig. 1, which shows a schematic structural diagram of a wafer level package structure of an existing acoustic wave device obtained by using a wafer bonding and TSV technique, and may include: the structure comprises a carrier wafer 1, an acoustic wave device 2, a cap wafer 3, a TSV (through silicon Via) through hole 4, a bonding material 5, a metal bump 6 for connecting the TSV through hole 4 and the outside, and a cavity 7 formed by the carrier wafer 1, the cap wafer 3 and the bonding material 5. However, since the wafer bonding and TSV technology are very complicated in implementation process, very high in precision requirements for equipment and process, and expensive in manufacturing cost, the manufacturing process of the wafer level packaging structure of the acoustic wave device becomes complicated and complex, and the cost is high.
In summary, how to simplify the manufacturing process of the wafer level packaging structure of the acoustic wave device and reduce the manufacturing cost of the wafer level packaging structure of the acoustic wave device is a technical problem to be solved urgently by those skilled in the art.
Disclosure of Invention
In view of the above, an object of the present invention is to provide an acoustic wave device wafer level package structure and a method for manufacturing the same, so as to simplify a manufacturing process of the acoustic wave device wafer level package structure and reduce a manufacturing cost of the acoustic wave device wafer level package structure.
In order to achieve the above purpose, the invention provides the following technical scheme:
a preparation method of a wafer level packaging structure of an acoustic wave device comprises the following steps:
arranging an acoustic wave device on the upper surface of a carrier wafer, covering a first film layer on the upper surface of the carrier wafer, and etching the first film layer at a preset position to form a wall structure, wherein the preset position comprises a first preset position and a second preset position, the first preset position is the position where the acoustic wave device is located, and the second preset position is the position of a bonding pad for leading out the acoustic wave device;
covering a second film layer above the wall structure, and etching off the second film layer at the second preset position to form a roof structure;
and filling a conducting layer at the second preset position to obtain a bonding pad leading-out part of the acoustic wave device, and arranging a metal bonding pad above the bonding pad leading-out part to obtain a wafer-level packaging structure of the acoustic wave device.
Preferably, after etching away the second membrane layer at the second predetermined position to form a roof structure, the method further comprises:
and arranging a pressure-resistant layer above the roof structure, wherein the pressure-resistant layer is any one of metal, glass and silicon.
Preferably, the metal pad is a metal bump, wherein the metal bump is any one of a solder bump, a copper-tin bump, and a copper-nickel-palladium-gold bump or a combination of any multiple thereof.
Preferably, the metal pad is any one of an oval, a circle and a polygon.
Preferably, the area of the metal pad is greater than or equal to the area of the second preset position.
Preferably, the etching away the first film layer at the predetermined position and the etching away the second film layer at the second predetermined position include:
and etching the first film layer at the preset position by utilizing a photoetching process, and etching the second film layer at the second preset position by utilizing the photoetching process.
Preferably, the first film layer and the first film layer are both a photoresist layer or a polyimide layer.
Preferably, covering a first film layer on the upper surface of the carrier wafer, and covering a second film layer above the wall structure, includes:
and covering the first film layer on the upper surface of the carrier wafer by using a gluing process or a film pressing process, and covering the second film layer above the wall structure by using a film pressing process.
Preferably, the filling of the conductive layer at the second preset position includes:
and filling the conductive layer at the second preset position by using a sputtering method or an electroplating method.
An acoustic wave device wafer level packaging structure is prepared by the preparation method of any one of the acoustic wave device wafer level packaging structures.
The invention provides a wafer-level packaging structure of an acoustic wave device and a preparation method thereof, wherein the preparation method comprises the following steps: arranging an acoustic wave device on the upper surface of a carrier wafer, covering a first film layer on the upper surface of the carrier wafer, and etching the first film layer at a preset position to form a wall structure, wherein the preset position comprises a first preset position and a second preset position, the first preset position is the position where the acoustic wave device is located, and the second preset position is the position of a bonding pad for leading out the acoustic wave device; covering a second film layer above the wall structure, and etching off the second film layer at a second preset position to form a roof structure; and filling a conducting layer at the second preset position to obtain a bonding pad leading-out part of the acoustic wave device, and arranging a metal bonding pad above the bonding pad leading-out part to obtain a wafer-level packaging structure of the acoustic wave device.
According to the technical scheme, the upper surface of the carrier wafer provided with the acoustic wave device is covered with the first film layer, the first film layer at the preset position is etched to obtain the wall structure, the acoustic wave device and the position for leading out the bonding pad of the acoustic wave device are exposed, then the second film layer is covered above the wall structure, the second film layer at the second preset position is etched to obtain the roof structure, the cavity structure required by the wafer-level packaging structure of the acoustic wave device is formed, the position for leading out the bonding pad of the acoustic wave device is exposed, then the conducting layer is filled at the second preset position to obtain the leading-out part of the bonding pad, the metal bonding pad is arranged above the leading-out part of the bonding pad, and finally the wafer-level packaging structure of the acoustic wave device is obtained.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the provided drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a conventional wafer-level packaging structure of an acoustic wave device, which is obtained by using wafer bonding and TSV technology;
fig. 2 is a flowchart of a method for manufacturing a wafer level package structure of an acoustic wave device according to an embodiment of the present invention;
fig. 3 is an operation diagram of a method for manufacturing a wafer level package structure of an acoustic wave device according to an embodiment of the present invention;
fig. 4 is a schematic structural diagram of a wafer level package structure of an acoustic wave device according to an embodiment of the present invention;
fig. 5 is a cross-sectional view of an acoustic wave device wafer level package structure after surface mounting and plastic packaging according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of another wafer level package structure for an acoustic wave device according to an embodiment of the present invention;
fig. 7 is a top view of an embodiment of an acoustic wave device wafer level package structure according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 2 and fig. 3, fig. 2 is a flowchart illustrating a method for manufacturing an acoustic wave device wafer level package structure according to an embodiment of the present invention, and fig. 3 is an operation diagram illustrating the method for manufacturing the acoustic wave device wafer level package structure according to the embodiment of the present invention. The preparation method of the wafer-level packaging structure of the acoustic wave device provided by the embodiment of the invention can comprise the following steps:
s11: the method comprises the steps of arranging an acoustic wave device on the upper surface of a carrier wafer, covering a first film layer on the upper surface of the carrier wafer, etching the first film layer at a preset position to form a wall structure, wherein the preset position comprises a first preset position and a second preset position, the first preset position is the position where the acoustic wave device is located, and the second preset position is the position of a bonding pad for leading out the acoustic wave device.
The carrier wafer 1 is made of materials such as high-resistance silicon, lithium tantalate, lithium niobate and quartz or a composite material formed by combining multiple layers of materials, and the carrier wafer 1 is cleaned. The acoustic wave device 2 is placed and fixed on the upper surface of the cleaned carrier wafer 1 after the steps of thin film deposition, photolithography and the like. The upper surface of the carrier wafer 1 (i.e., the side on which the acoustic wave device 2 is placed) is then covered with a first film layer 8.
After the first film layer 8 is covered and when the first film layer 8 is fixed on the carrier wafer 1, the first film layer 8 covered at the preset position of the upper surface of the carrier wafer 1 is etched, wherein the preset position comprises a first preset position and a second preset position, the first preset position is the position where the acoustic wave device 2 is located, and the second preset position is the position where the bonding pad for leading out the acoustic wave device 2 is located, so that the acoustic wave device 2 and the position for leading out the bonding pad are exposed. After etching away the first film layer 8 at the second predetermined position, a supporting wall structure 9 can be obtained.
S12: and covering a second film layer above the wall structure, and etching off the second film layer at a second preset position to form the roof structure.
After the wall structure 9 is obtained, a second film layer 10 is covered over the wall structure 9. After the second film layer 10 is covered and when the second film layer 10 is fixed on the wall structure 9, the second film layer 10 at a second preset position above the wall structure 9 is etched away, so that the position for leading out the bonding pad is exposed.
And etching off the second membrane layer 10 at the second preset position, and reserving the second membrane layer 10 at the rest positions to obtain the roof structure 11. At this time, the carrier wafer 1, the wall structure 9, and the roof structure 11 can form a cavity structure necessary for the acoustic wave device 2 around the acoustic wave device 2, and can simultaneously expose a position of a pad for leading out the acoustic wave device 2.
That is, here, it is not necessary to obtain the cavity structure by the cap wafer, hollowing the cap wafer, and bonding the carrier wafer 1 and the cap wafer, and it is not necessary to punch a pin by the TSV technology, but it is only necessary to obtain the cavity structure by covering the film layer and etching the film layer at a specific position, and it is possible to expose a position of the pad for leading out the acoustic wave device 2. The complexity of the covering film layer and the etching film layer is lower than that of the wafer bonding process and the TSV technology, and the processes of the covering film layer and the etching film layer are not required to be realized through expensive equipment, so that the cavity structure can be simplified, the preparation difficulty of the bonding pad for leading out the acoustic wave device 2 can be reduced, and the cost of the preparation process can be reduced.
S13: and filling a conducting layer at the second preset position to obtain a bonding pad leading-out part of the acoustic wave device, and arranging a metal bonding pad above the bonding pad leading-out part to obtain a wafer-level packaging structure of the acoustic wave device.
After the second film layer 10 at the second predetermined position is etched away to expose the position of the pad for leading out the acoustic wave device 2, the second predetermined position may be filled with a conductive layer, that is, the position of the pad for leading out the acoustic wave device 2 may be filled with a conductive layer to obtain the pad-leading-out portion 12 of the acoustic wave device 2. Compared with the method of leading out the pin of the acoustic wave device 2 by using the TSV technology, the process of filling the conductive layer is relatively easy to realize, and the realization cost is relatively low. The material of the filled conductive layer may be specifically a conductive material such as titanium, copper, nickel, palladium, gold, tin, or an alloy thereof.
After the pad lead-out portion 12 of the acoustic wave device 2 is obtained, a metal pad 13 may be disposed above the pad lead-out portion 12, and the metal pad 13 is used for being soldered with the outside to obtain a wafer-level package structure of the acoustic wave device, and a specific structure of the wafer-level package structure of the acoustic wave device according to an embodiment of the present invention may be referred to fig. 4, which illustrates a schematic structural diagram of the wafer-level package structure of the acoustic wave device according to the embodiment of the present invention. The metal pad 13 may be made of conductive material such as titanium, copper, nickel, palladium, gold, tin, or alloy thereof.
After obtaining the wafer-level packaging structure of the acoustic wave device, the wafer-level packaging structure of the acoustic wave device may be subjected to surface mounting and plastic packaging, and specifically, refer to fig. 5, which shows a cross-sectional view of the wafer-level packaging structure of the acoustic wave device, which is provided by the embodiment of the present invention, after the wafer-level packaging structure of the acoustic wave device is subjected to surface mounting and plastic packaging. The obtained wafer-level packaging structure of the acoustic wave device is placed on a substrate 14, and surface mounting is carried out on the wafer-level packaging structure of the acoustic wave device, wherein an external bonding pad 15 corresponding to the metal bonding pad 13 in the wafer-level packaging structure of the acoustic wave device is arranged on the substrate 14. After the surface mounting is completed, the molding compound 16 may be wrapped around the wafer-level package structure of the acoustic wave device by using a hot-pressing injection molding method.
According to the technical scheme, the upper surface of the carrier wafer provided with the acoustic wave device is covered with the first film layer, the first film layer at the preset position is etched to obtain the wall structure, the acoustic wave device and the position for leading out the bonding pad of the acoustic wave device are exposed, then the second film layer is covered above the wall structure, the second film layer at the second preset position is etched to obtain the roof structure, the cavity structure required by the wafer-level packaging structure of the acoustic wave device is formed, the position for leading out the bonding pad of the acoustic wave device is exposed, then the conducting layer is filled at the second preset position to obtain the leading-out part of the bonding pad, the metal bonding pad is arranged above the leading-out part of the bonding pad, and finally the wafer-level packaging structure of the acoustic wave device is obtained.
The method for manufacturing the wafer-level package structure for the acoustic wave device according to the embodiment of the present invention may further include, after etching away the second film layer at the second predetermined position to form a roof structure:
and a pressure-resistant layer is arranged above the roof structure, and is made of any one of metal, glass and silicon.
Referring specifically to fig. 6, a schematic structural diagram of another wafer-level packaging structure for an acoustic wave device according to an embodiment of the present invention is shown. After etching away the second membrane layer 10 at the second predetermined position to form the roof structure 11, a layer of compressive layer 17 with relatively high hardness/rigidity may be disposed above the roof structure 11, wherein the compressive layer 17 may specifically be copper or other metal material, and may also be non-metal material such as glass, silicon, and the like.
Because the hardness/rigidity of the compression-resistant layer 17 is relatively strong, the compression-resistant layer 17 can enhance the capacity of the cavity structure to resist the plastic package pressure, that is, the compression-resistant layer 17 can protect the roof structure 11 to prevent the roof structure 11 from collapsing in the plastic package process.
It should be noted that the material for preparing the anti-pressure layer 17 and the material for the device roof structure 11 may be designed and manufactured together in advance to form a multi-layer composite material, so as to enhance the plastic sealing pressure resistance of the cavity structure.
In the method for manufacturing the wafer level package structure of the acoustic wave device according to the embodiment of the present invention, the metal pad may be a metal bump, wherein the metal bump is any one or a combination of any more of a solder bump, a copper-tin bump, and a copper-nickel-palladium-gold bump.
Referring to fig. 6, after the anti-pressure layer 17 is disposed above the roof structure 11, in order to facilitate the soldering between the metal pad 13 and the outside, the metal pad 13 may be designed as a metal bump 131, so as to simplify the manufacturing process of the metal pad 13 and reduce the complexity of the manufacturing of the wafer level package structure of the acoustic wave device.
The metal bump 131 may be any one or a combination of any multiple of a solder bump, a copper-tin bump, and a copper-nickel-palladium-gold bump, so as to improve the conductivity of the metal pad 13.
According to the preparation method of the wafer-level packaging structure of the acoustic wave device, provided by the embodiment of the invention, the metal bonding pad can be any one of an oval shape, a circular shape and a polygonal shape.
The metal pad 13 arranged in the wafer level packaging structure of the acoustic wave device can be any one of an oval shape, a circular shape and a polygonal shape, wherein the polygonal shape can be a square shape, a pentagonal shape, a hexagonal deformation, an octagonal shape and the like, so that the contact area of the metal pad 13 during welding with the outside is increased, the transmission loss caused by welding is reduced, and the performance of the acoustic wave device and a final product is improved. Referring specifically to fig. 7, a top view of an embodiment of an acoustic wave device wafer level package structure provided by the present invention is shown, wherein the metal pads 13 provided in fig. 7 have a square shape.
According to the preparation method of the wafer-level packaging structure of the acoustic wave device, provided by the embodiment of the invention, the area of the metal bonding pad can be larger than or equal to the area of the second preset position.
Referring to fig. 7, the area of the metal pad 13 may be equal to or larger than the area of the second predetermined location, that is, the area of the metal pad 13 is relatively large.
The metal pad 13 with a larger area can cover a part of the roof structure 11 to reduce the exposed area of the roof structure 11. Because the metal bonding pad 13 has a relatively strong hardness/rigidity, the metal bonding pad can resist the mold flow pressure during plastic package, so that the roof structure 11 is prevented from collapsing, and the reliability of the acoustic wave device and a final product is improved. In addition, when the area of the metal pad 13 is large, the surface mounting equipment with very high precision is not needed to be used for surface mounting during surface mounting, and therefore the packaging cost of the product can be reduced, the manufacturing cost of the final product is reduced, and the competitiveness of the product is improved.
The method for manufacturing a wafer level package structure of an acoustic wave device according to an embodiment of the present invention includes etching a first film layer at a predetermined position and etching a second film layer at a second predetermined position, and may include:
and etching the first film layer at the preset position by utilizing a photoetching process, and etching the second film layer at the second preset position by utilizing the photoetching process.
When the first film layer at the preset position and the second film layer at the second preset position are etched, a photoetching process can be specifically utilized for etching.
The photoetching process has the advantages of high etching precision, mature and simple process and low etching cost.
According to the preparation method of the wafer-level packaging structure of the acoustic wave device, both the first film layer and the first film layer can be photoresist layers or polyimide layers.
The first film layer and the second film layer covering the surface of the carrier wafer can be photoresist layers or polyimide layers, and the first film layer and the second film layer can be prepared by utilizing the photoresist or the polyimide. Of course, the first film layer and the second film layer may also be prepared using dry film materials.
It should be noted that the first film layer and the second film layer may be made of the same material, and of course, the first film layer and the second film layer may be made of different materials.
The method for manufacturing a wafer-level package structure of an acoustic wave device according to an embodiment of the present invention includes covering a first film layer on an upper surface of a carrier wafer, and covering a second film layer on a wall structure, and may include:
and covering a first film layer on the upper surface of the carrier wafer by using a gluing process or a film pressing process, and covering a second film layer above the wall structure by using a film pressing process.
When the first film layer and the second film layer are covered, a gluing process or a film pressing process can be specifically used for covering.
The film covering process through the gluing process or the film pressing process has the characteristics of simple process, high film covering efficiency, lower equipment cost and the like, so that the preparation process of the wafer-level packaging structure of the acoustic wave device can be simplified, the preparation efficiency of the wafer-level packaging structure of the acoustic wave device is improved, and the preparation cost of the wafer-level packaging structure of the acoustic wave device is reduced.
It should be noted that the first film layer and the second film layer may be covered by the same process, or may be covered by different processes. For example: a first film layer can be covered on the surface of the carrier wafer in a gluing mode, and a second film layer is covered on the surface of the wall structure by a film pressing process; or covering the first film layer on the surface of the carrier wafer by using a film pressing process, and covering the second film layer on the surface of the wall structure by using the film pressing process.
The method for manufacturing the wafer-level packaging structure of the acoustic wave device provided by the embodiment of the invention, wherein the step of filling the conductive layer at the second preset position, may include:
and filling the conductive layer in the second preset position by using a sputtering method or an electroplating method.
When the conductive layer is filled, the conductive layer can be filled by sputtering or plating. The preparation efficiency of the sputtering method or the electroplating method is high, and the preparation accuracy is high, so that the preparation efficiency of the wafer-level packaging structure of the acoustic wave device can be improved, and the performances of the acoustic wave device and a final product can be improved.
After the conductive layer is filled by using a sputtering method or an electroplating method, the metal bonding pad can be prepared by using the same method as the method for filling the conductive layer, namely the metal bonding pad can also be prepared by using the sputtering method or the electroplating method, so that the complexity of preparing the wafer-level packaging structure of the acoustic wave device is reduced, and the preparation efficiency of the wafer-level packaging structure of the acoustic wave device is improved. Of course, the metal pad may be directly prepared by a sputtering method or an electroplating method regardless of the method used for filling the conductive layer.
The embodiment of the invention also provides an acoustic wave device wafer level packaging structure, which is prepared by using any one of the preparation methods of the acoustic wave device wafer level packaging structure.
The manufacturing method of any acoustic wave device wafer level packaging structure can reduce the complexity degree of the manufacturing process and reduce the manufacturing cost, so that the acoustic wave device wafer level packaging structure manufactured by the manufacturing method has lower manufacturing cost, and the product competitiveness of the acoustic wave device wafer level packaging structure can be improved.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Furthermore, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include elements inherent in the list. Without further limitation, an element defined by the phrase "comprising a … …" does not exclude the presence of another identical element in a process, method, article, or apparatus that comprises the element. In addition, parts of the above technical solutions provided in the embodiments of the present invention that are consistent with the implementation principles of the corresponding technical solutions in the prior art are not described in detail, so as to avoid redundant description.
The previous description of the disclosed embodiments is provided to enable any person skilled in the art to make or use the present invention. Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention. Thus, the present invention is not intended to be limited to the embodiments shown herein but is to be accorded the widest scope consistent with the principles and novel features disclosed herein.
Claims (10)
1. A preparation method of a wafer level packaging structure of an acoustic wave device is characterized by comprising the following steps:
arranging an acoustic wave device on the upper surface of a carrier wafer, covering a first film layer on the upper surface of the carrier wafer, and etching the first film layer at a preset position to form a wall structure, wherein the preset position comprises a first preset position and a second preset position, the first preset position is the position where the acoustic wave device is located, and the second preset position is the position of a bonding pad for leading out the acoustic wave device;
covering a second film layer above the wall structure, and etching off the second film layer at the second preset position to form a roof structure;
and filling a conducting layer at the second preset position to obtain a bonding pad leading-out part of the acoustic wave device, and arranging a metal bonding pad above the bonding pad leading-out part to obtain a wafer-level packaging structure of the acoustic wave device.
2. A method for fabricating an acoustic wave device wafer level package structure according to claim 1, further comprising, after etching away the second film layer at the second predetermined location to form a roof structure:
and arranging a pressure-resistant layer above the roof structure, wherein the pressure-resistant layer is made of any one of metal, glass and silicon.
3. The method of claim 2, wherein the metal pads are metal bumps, and wherein the metal bumps are any one or a combination of any more of solder bumps, copper-tin bumps, and copper-nickel-palladium-gold bumps.
4. The method for manufacturing an acoustic wave device wafer level package structure according to claim 1, wherein the shape of the metal pad is any one of an ellipse, a circle, and a polygon.
5. The method of claim 4, wherein an area of the metal pad is greater than or equal to an area of the second predetermined location.
6. A method for fabricating an acoustic wave device wafer level package structure according to any of claims 1 to 5, wherein etching away the first film layer at a predetermined location and etching away the second film layer at the second predetermined location comprises:
and etching the first film layer at the preset position by utilizing a photoetching process, and etching the second film layer at the second preset position by utilizing the photoetching process.
7. The method of claim 6, wherein the first film layer and the second film layer are both a photoresist layer or a polyimide layer.
8. The method of fabricating an acoustic wave device wafer level package structure according to claim 6, wherein covering a first film layer on an upper surface of the carrier wafer and covering a second film layer over the wall structure comprises:
covering the first film layer on the upper surface of the carrier wafer by using a gluing process or a film pressing process, and covering the second film layer above the wall structure by using the film pressing process.
9. The method for manufacturing an acoustic wave device wafer level package structure according to claim 6, wherein filling a conductive layer in the second predetermined location comprises:
and filling the conductive layer at the second preset position by using a sputtering method or an electroplating method.
10. An acoustic wave device wafer level package structure, characterized in that the acoustic wave device wafer level package structure is prepared by the method for preparing an acoustic wave device wafer level package structure according to any one of claims 1 to 9.
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