JP2005033689A - Surface acoustic wave device and manufacturing method thereof - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a surface acoustic wave device and manufacturing method thereof which secure leading flexibility in re-wiring without providing a printed board and which can easily structure a vibration space in a surface acoustic wave device of a wafer level CSP (Chip Size Package) structure where a hollow close space is provided around an excitation function portion. <P>SOLUTION: A surface acoustic wave filter having an excitation function portion 22 and a pad electrode 23 is formed on one of the main surface of a piezoelectric substrate 21. A surface acoustic wave device is provided with a first insulation layer 24 formed on a region except a pad electrode portion 23, a wiring pattern 25 with electronic continuity which includes the pad electrode 23 and which is formed on the first insulation layer 24, a second insulation layer 26 formed on the wiring pattern 25, an external electrode 27 formed on the second insulation layer 26, and a column electrode 28 connecting the wiring pattern 25 buried in the second insulation layer 26 and the external electrode 27 so as to have an electronic continuity. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

  The present invention relates to a surface acoustic wave device in which electrodes are formed on the surface of a piezoelectric substrate, and more particularly, to a surface acoustic wave device having a wafer level CSP (Chip Size Package) structure in which a hollow closed space is provided around an excitation function portion, and It relates to the manufacturing method.

  A surface acoustic wave filter typified by a surface acoustic wave device is widely used in the communication field, and has excellent features such as high performance, small size, and mass productivity. Therefore, it is often used for mobile communication devices such as mobile phones. It has been. For example, as one of the filters used in the RF unit of a cellular phone, there is a broadband longitudinally coupled double mode surface acoustic wave filter (hereinafter referred to as a longitudinally coupled DMS filter) using primary and tertiary longitudinal modes. In particular, in a scene that requires a steep attenuation gradient and a large guaranteed attenuation amount, a cascade connection type longitudinally coupled DMS filter (hereinafter referred to as a cascaded longitudinally coupled DMS filter) in which two longitudinally coupled DMS filters are juxtaposed on a piezoelectric substrate is used. It is used.

FIG. 13 is a diagram illustrating an example of an electrode structure of a cascaded vertically coupled DMS filter element, and FIG. 14 is a detailed explanatory diagram of individual vertically coupled DMS filters constituting the cascaded vertically coupled DMS filter element.
The cascaded longitudinally coupled DMS filter element 11 shown in FIG. 13 includes a plurality of pieces that are inserted into one main surface of the piezoelectric substrate shown in FIG. 14A along the direction of propagation of surface waves (arrows in the figure). Vibration propagating section in which IDT (Interdigital Transducer) electrodes 1 to 3 composed of a pair of comb electrodes having electrode fingers are arranged close to each other and grating reflectors (hereinafter referred to as reflectors) 4a and 4b are arranged on both sides thereof. That is, it has a longitudinally coupled DMS filter 5 and a plurality of electrode fingers that are inserted into each other along the surface wave propagation direction (arrow in the figure) on one main surface of the piezoelectric substrate shown in FIG. A pair of comb-shaped IDT electrodes 6 to 8 are arranged close to each other, and provided with a vibration propagation part, that is, a longitudinally coupled DMS filter 10 having reflectors 9a and 9b disposed on both sides thereof.

From the vertically coupled DMS filters 5 and 10, a signal input pad electrode IN, a signal output pad electrode OUT, and pad electrodes E1 to E4 for ground potential are led out.
The pad electrode IN is on the substrate edge side near the center of the longitudinally coupled DMS filter 5, the pad electrode OUT is on the substrate edge side near the center of the longitudinally coupled DMS filter 10, and the pad electrodes E1 to E4 are longitudinally connected to the longitudinally coupled DMS filter 5. The pad electrodes E1 to E4 are arranged in a row so as to be orthogonal to a line connecting the pad electrode IN and the pad electrode OUT. Further, the longitudinally coupled DMS filter 5 and the longitudinally coupled DMS filter 10 are arranged in line symmetry in the vertical direction in the figure, and the pad electrodes E1 to E4 and the pad electrode IN are disposed on the longitudinally coupled DMS filter 5 and the longitudinally coupled DMS filter 10. The lead lines electrically connecting the pad electrodes OUT are routed so as to be point-symmetric with respect to the center of the piezoelectric substrate.

Further, the lead line routing will be described in detail. The lead line extends upward from the approximate center of the comb-shaped electrode 1a (upper side in the figure) included in the IDT electrode 1 and is connected to the pad electrode IN. Further, the lead line is extended downward from the approximate center of the comb-shaped electrode 6a (lower side in the figure) included in the IDT electrode 6 and connected to the pad electrode OUT.
A lead line is extended downward from substantially the center of the comb-shaped electrode 1b (lower side in the figure) included in the IDT electrode 1 and connected to the pad electrode E3. Further, the lead line is extended upward from the approximate center of the comb-shaped electrode 6b (upper side in the figure) provided in the IDT electrode 6 and connected to the pad electrode E2.

A lead line extends downward from a part of the lowermost side of the comb-shaped electrode 2b (lower side in the figure) provided in the IDT electrode 2 and one of the uppermost sides of the comb-shaped electrode 8b (upper side in the figure) provided in the IDT electrode 8 The lead line is extended upward from the portion and connected via the outside of the pad electrode E2.
Further, the lead line extends downward from a part of the lowest end side of the comb-shaped electrode 3b (lower side in the figure) provided in the IDT electrode 3, and the uppermost end side of the comb-shaped electrode 7b (upper side in the figure) provided in the IDT electrode 7 A lead line is extended upward from a part of the electrode and connected via the outside of the pad electrode E3.
A lead line extends upward from a part of the uppermost side of the comb-shaped electrode 2a (upper side in the figure) provided in the IDT electrode 2 and a part of the lowermost side of the comb-shaped electrode 8a (lower side in the figure) provided in the IDT electrode 8 A lead line is extended in the downward direction and connected to the pad electrode E1 via the left outer side of the reflector 4a and the reflector 9a.
Further, the lead line is extended upward from a part of the uppermost side of the comb-shaped electrode 3a (upper side in the figure) provided in the IDT electrode 3 and the lowermost side of the comb-shaped electrode 7a (lower side in the figure) provided in the IDT electrode 7 A lead line is extended downward from a part and connected to the pad electrode E4 via the right outside of the reflector 4b and the reflector 9b.

In recent years, due to rapid progress in price reduction and downsizing due to the spread of mobile communication devices, there is an increasing demand for further price reduction and downsizing (low profile) for the cascaded vertically coupled DMS filter element described above. In order to satisfy this requirement, a package technology of a chip size package (hereinafter referred to as “CSP”) that is becoming common in the semiconductor field is indispensable. CSP is a kind of surface mount package and is a general term for small packages that are the same as or slightly larger than the size of a silicon chip. The structure is flipped on one main surface of a printed circuit board that serves as a package base. A silicon chip is connected by chip bonding, and the silicon chip is covered with a sealing resin.
The positions of the external electrode terminals provided on the other main surface of the printed circuit board are generally arranged at the four corners of the printed circuit board, but the arrangement positions are different from the positions of the bonding pad electrodes of the silicon chip. In many cases, the position is a position, and the connection between the pad electrode and the external electrode terminal can be handled by free routing by the internal wiring of the printed circuit board.

In such a CSP, in order to meet the demand for further downsizing and thinning, it is also proposed to apply a wafer level CSP structure as disclosed in, for example, Japanese Patent Laid-Open No. 2000-261284 to a surface acoustic wave device. ing.
FIG. 15 is a longitudinal sectional view showing the configuration of the package.
As can be seen from the figure, a comb-tooth shaped excitation electrode 102 formed on one main surface of the piezoelectric substrate 101, and a wiring electrode 103 including an input / output pad and a ground pad electrically connected to the excitation electrode 102. A plurality of columnar electrodes 105 erected on the wiring electrode 103 (at least the input / output pad), and a protective cover 104 made of metal or the like that covers the excitation electrode 102 so as to secure the vibration space 108 of the excitation electrode 102. The solder bump 107 is disposed on the upper end portion of the columnar electrode 105 exposed from the outer cover 106 made of an insulating material such as a resin covering the outer peripheral portion of the columnar electrode 105 and the protective cover 104, thereby providing an external circuit board (not shown). It is possible to mount to (shown). According to this, since the printed circuit board can be omitted, the size can be reduced.
JP 2000-261284 A

However, the conventional surface acoustic wave device described above has the following problems. That is, since the columnar electrode 105 is disposed on the wiring electrode 103 (pad electrode) formed on the piezoelectric substrate and the external electrode terminal such as the solder bump 107 is provided via the columnar electrode 105, the coupling between the wiring electrodes 103 is performed. The degree of routing freedom in rewiring was poor.
In addition, the protective cover 104 for securing the hollow closed space, that is, the vibration space 108 is mounted around the excitation electrode 102 forming the filter, and airtightness is performed. However, advanced technology is used for accurate position fixing. It was necessary.

  Accordingly, the present invention has been made to solve such problems, and it is possible to secure a surface acoustic wave that can secure a freedom of routing in rewiring and can easily construct a vibration space without providing a printed circuit board. An object is to provide an apparatus and a method for manufacturing the same.

  In order to solve the above problems, the surface acoustic wave device according to the first aspect of the present invention is an excitation function unit including a vibration propagation electrode on one main surface of a piezoelectric substrate, and is drawn out from the excitation function unit by a lead line. A surface acoustic wave element having a pad electrode portion formed thereon, and a first surface formed so as to be hollow around the excitation function portion on the main surface of the surface acoustic wave element and to cover a region excluding the pad electrode portion. And a wiring pattern formed so as to be led out in the vicinity of an edge of the surface acoustic wave element plane while dividing the first insulating layer and the pad electrode portion as a region for each signal. Columnar electrodes arranged for each signal wiring pattern, a second insulating layer filled with the tip of the columnar electrode exposed, and an external formed by connecting to the columnar electrode on the second insulating layer With electrodes The features.

  According to a second aspect of the surface acoustic wave device of the present invention, in the surface acoustic wave device according to the first aspect, the hollow of the excitation function portion is formed between the first insulating layer and the wiring pattern. It is characterized by being substantially covered with a double layer.

According to a third aspect of the surface acoustic wave device of the present invention, in the surface acoustic wave device according to the first or second aspect, the first insulating layer contains SiO ₂ as a component in a room temperature region. It is a vitrified metal oxide glass.

  The invention according to claim 4 of the method for manufacturing a surface acoustic wave device according to the present invention includes an excitation function part including a vibration propagation electrode on one main surface of a piezoelectric substrate, and a pad drawn from the excitation function part by a lead line. A step of forming an electrode portion, a step of forming a resist film so as to cover the excitation function portion, a step of forming a first insulating layer on one whole main surface of the piezoelectric substrate, A step of removing the first insulating layer by masking at least one end and a region excluding the pad electrode, a step of removing the mask and the resist film, and a metal layer over the entire one main surface of the piezoelectric substrate And removing the metal layer by masking the region including at least one end of the resist film and the pad electrode on the periphery of one of the main surfaces of the piezoelectric substrate while dividing the region including the signal on the signal. You A step of forming a wiring pattern, a step of disposing a columnar electrode for each of the divided signal-specific wiring patterns, and a second insulating layer to fill the sealing member and expose the tip of the columnar electrode. And a step of forming an external electrode connected to the columnar electrode on the second insulating layer.

  According to a fifth aspect of the method for manufacturing a surface acoustic wave device according to the present invention, in the method for manufacturing the surface acoustic wave device according to the fourth aspect, the individual pieces are obtained after each step is performed on one wafer. It is characterized by dividing into two.

The surface acoustic wave device and the method for manufacturing the same according to the present invention include a step of forming a resist film so as to cover the excitation function unit, a step of forming a first insulating layer on one entire main surface of the piezoelectric substrate, By passing through a step of removing the first insulating layer by masking a region excluding at least one end of the resist film and the pad electrode, and a step of peeling the mask and the resist film,
Since a hollow closed space can be formed around the excitation function portion on the main surface of the surface acoustic wave element, there is no need to cover and arrange a member such as a protective cover.
A step of forming a metal layer over one main surface of the piezoelectric substrate; and a region including at least one end of the resist film and the pad electrode according to the signal, and dividing the peripheral region of the one main surface of the piezoelectric substrate. By passing through a step of forming a wiring pattern by removing the metal layer by masking so as to lead to the vicinity, it is possible to perform free routing in rewiring.

  The purpose of providing a surface acoustic wave device and a manufacturing method thereof that can secure a degree of freedom in rewiring without providing a printed circuit board and can easily construct a vibration space, by a manufacturing technique utilizing photolithography, A surface acoustic wave device suitable for miniaturization was realized with the minimum number of parts.

Hereinafter, the present invention will be described in detail based on the illustrated embodiment.
FIG. 1 is a sectional view showing an embodiment of a surface acoustic wave device according to the present invention. Here, as in the case of the conventional example described above, a CSP-structured cascaded DMS filter device will be described as an example of a surface acoustic wave device.
In the cascaded vertically coupled DMS filter device 20 shown in this example, a cascaded vertically coupled DMS filter having excitation function portions 22a, 22b and pad electrode portions 23a, 23b, 23c is formed on one main surface of a piezoelectric substrate 21. A first insulating layer 24 formed on a region excluding the pad electrode portions 23a, 23b, and 23c, and an electricity formed on the first insulating layer 24 including the pad electrode portions 23a, 23b, and 23c. Wiring pattern 25 capable of electrical conduction, a second insulating layer 26 formed on the wiring pattern 25, an external electrode 27 formed on the second insulating layer 26, and the second insulating layer. A columnar electrode 28 is provided which is embedded in the layer 26 and connects the wiring pattern 25 and the external electrode 27 so as to be electrically conductive.
In addition, vibration spaces 29a and 29b surrounded by the first insulating layer 24 are provided around the excitation function units 22a and 22b, respectively.

Each configuration of the cascaded vertically coupled DMS filter device 20 shown in this figure will be described in detail below for each manufacturing procedure.
(STEP 1) FIG. 2 is a diagram showing a process for an example of forming a surface acoustic wave element in the manufacturing method of the present invention, where FIG. 2 (a) is a plan view, and FIG. 2 (b) is a portion indicated by A in the plan view. (C) is sectional drawing of a site | part shown as B in a top view (henceforth B sectional drawing).
In the surface acoustic wave element 30 shown in this figure, a filter having an excitation function part 22 made of an excitation electrode and a pad electrode part 23 made of a wiring electrode is formed on one surface of a rectangular flat plate-like piezoelectric substrate 21. Since this filter itself is the same as that shown in FIG. 13 described above, the description thereof is omitted here.

(STEP2) FIG. 3 is a diagram showing a process for forming a resist film in the manufacturing method of the present invention, where FIG. 3 (a) is a plan view, FIG. 3 (b) is an A sectional view, and FIG. FIG.
As shown in FIG. 4A, the resist film 31 in this step is formed so as to cover the excitation function unit 22. Since the vibration space is secured by peeling the resist film 31 in a process described later, the resist film is formed in consideration of the height and width of the vibration space.
The resist film 31 formed here is, for example, a photosensitive resin, and it is desirable that the applied film thickness be thin enough not to inhibit the vibration of the excitation function unit 22, and specifically, 2 to 5 μm. In this example, the film width is narrowed at both ends of the resist film 31 extended along the excitation function part 22. This is a process that will be described later, and a resist stripping solution inlet / outlet port is provided at both ends of the resist film. However, since the inlet / outlet port is finally closed, the opening area has an effect on the resist stripping solution inlet / outlet. It is a consideration to ensure the sealing of the intrusion / discharge port by keeping it as small as possible. The photosensitive resin applied in this way is dried and cured to form a resist film 31.

(STEP 3) FIG. 4 is a diagram showing a process for forming a first insulating layer in the manufacturing method of the present invention, where FIG. 4 (a) is a plan view, FIG. 4 (b) is a cross-sectional view of FIG. Is a B cross-sectional view.
As shown in FIG. 1A, the first insulating layer 24 in this step is formed over the entire one main surface of the piezoelectric substrate 21. As a result, the region of the pad electrode portion 23 and the resist film 31 is also covered with the first insulating layer 24.
The first insulating layer 24 formed here is made of, for example, metal oxide glass (also referred to as heatless glass) that contains SiO ₂ as a component and can be vitrified in a normal temperature region for ease of handling. By using this glass, it can be cured without being in a high temperature state. The film thickness of the first insulating layer 24 needs to be thicker than that of the resist film 31.

(STEP 4) FIGS. 5A and 5B are diagrams showing a process for forming a mask (photoresist film) in the manufacturing method of the present invention, where FIG. 5A is a plan view, FIG. 5B is a cross-sectional view of FIG. ) Is a B cross-sectional view.
As shown in FIG. 2A, the mask 32 in this step is formed on one main surface of the piezoelectric substrate 21 except for the regions on both ends of the pad electrode portion 23 and the resist film 31.
The mask 32 formed here may be formed by a general lithography process. After applying a photoresist on the entire surface and lightly baking it, regions on both ends of the pad electrode portion 23 and the resist film 31 are formed. It is the thin film formed by exposing and developing through the light-shielding member made to respond | correspond to. The first insulating layer 24 is exposed at the opening.

(STEP 5) FIGS. 6A and 6B are diagrams showing steps of an example of removing the first insulating film in the manufacturing method of the present invention. FIG. 6A is a plan view, FIG. 6B is a sectional view of FIG. Is a B cross-sectional view.
In other words, after the mask 32 is formed, the first insulating film is removed only in the regions on both ends of the pad electrode portion 23 and the resist film 31 by performing an etching process. Thereby, both end portions of the pad electrode portion 23 and the resist film 31 are exposed. Note that both end portions of the resist film 31 exposed here serve as an entrance / exit for the resist stripping solution.

(STEP 6) FIGS. 7A and 7B are diagrams showing the steps of a mask and resist film peeling example in the manufacturing method of the present invention. FIG. 7A is a plan view, FIG. 7B is a cross-sectional view of FIG. It is B sectional drawing.
The mask 32 and the resist film 31 are removed by dipping in a resist stripping solution. As a result, the portion where the resist film 31 was present becomes hollow, and this hollow space becomes the vibration space 29.

(STEP 7) FIGS. 8A and 8B are diagrams showing a process for forming a metal film in the manufacturing method of the present invention, where FIG. 8A is a plan view, FIG. 8B is an A sectional view, and FIG. FIG.
As shown in FIG. 1A, the metal film 33 in this step is formed over the entire one main surface of the piezoelectric substrate 21. As a result, both end portions of the pad electrode portion 23 and the resist film 31 are also covered with the metal film 33.
The metal film 33 formed here is formed by, for example, vapor deposition or sputtering using copper (Cu) as a material. The film thickness of the metal film 33 is a film thickness necessary for closing the entrance and exit of the resist stripping solution. If the height of the vibration space 29 is 5 μm, the film thickness of the metal film 33 is as follows. Needs to be thicker than 5 μm. That is, as a means for sealing the vibration space 29, the film thickness of the metal film 33 is used to block the entrance and exit of the resist stripping solution.
Note that the metal film 33 is formed into a wiring pattern 25 by patterning in a process described later, and the metal used as a material is not limited to Cu, but is general such as Au, Al, Sn, Ag, Ni, and solder. A typical metal can be used.

(STEP 8) FIG. 9 is a plan view showing a process for an example of forming a wiring pattern in the manufacturing method of the present invention.
A pattern is formed on the metal film 33 by performing photoresist coating, baking, exposure / development, etching, and resist peeling by a lithography process.
The wiring pattern 25 shown in this example shows a scene in which the pattern configuration is divided into four for each signal (for each role of the external electrode) required for the external interface of the surface acoustic wave device. This is a first “G” pattern in which three ground potential electrodes of the electrode 23 are combined and rewired so as to be drawn out to the corner of the main surface. The wiring pattern 25 b is connected to the input signal electrode of the pad electrode 23. Then, the “I” pattern is re-wired so as to be drawn out to another main surface corner, and the wiring pattern 25 c is connected to the output signal electrode of the pad electrode 23 and drawn out to another main surface corner. The wiring pattern 25d is a re-wired “O” pattern, and the wiring pattern 25d is a second “G” that is re-wired so that the remaining three ground potential electrodes of the pad electrode 23 are combined and pulled out to another main surface corner. It is formed as a pattern.

  Here, as a characteristic point, the wiring pattern 25 has a vibration space 29 in which both or one region of the wiring patterns 25a and 25d, which are “G” patterns, exhibits an electromagnetic shielding effect on the excitation function unit 22. Expand to cover. In this way, the vibration space 29 is surrounded by a strong wall structure in which the metal film wiring pattern 25 is laminated on the outside of the vitreous first insulating layer 24, and not only a shielding effect but also moisture resistance. Can also be improved.

(STEP 9) FIGS. 10A and 10B are diagrams showing a process for an arrangement example of columnar electrodes in the manufacturing method of the present invention, where FIG. 10A is a plan view, FIG. 10B is an A sectional view, and FIG. FIG.
As shown in this figure, in this example, a square columnar electrode 28 made of Cu is used and connected to each of the wiring patterns 25a to 25d divided for each signal. At this time, the position of the columnar electrode 28 is assumed to be a portion drawn to the corner in each of the wiring patterns 25a to 25d. The material used for the columnar electrode 28 may not be Cu, but may be changed to other general metals such as Au, Al, Sn, Ag, Ni, and solder. Further, the shape may not be a quadrangular prism, but may be changed to another polygonal cylinder, a cylinder, or a spherical one.

(STEP 10) FIGS. 11A and 11B are diagrams showing the steps of the sealing member filling example in the manufacturing method of the present invention, where FIG. 11A is a plan view and FIG. 11B is filled beyond the height of the columnar electrode. (C) is a cross-sectional view of B when filled beyond the height of the columnar electrode, (d) is a cross-sectional view of A when filled with the end face of the columnar electrode exposed, ( e) is a B cross-sectional view when the end face of the columnar electrode is filled in an exposed state.
As shown in this figure, a second insulating layer 26 as a sealing member is formed over the entire main surface. Specifically, a low-temperature fast-curing epoxy resin is allowed to flow into the sealing member (also referred to as underfill) and cured. At this time, after filling the second insulating layer 26 beyond the height of the columnar electrode 28 and curing the second insulating layer 26, the surface is polished to expose the end surface of the columnar electrode 28. Alternatively, the end surface of the columnar electrode 28 may be exposed by filling the second insulating layer 26 so as not to exceed the height of the columnar electrode 28.

(STEP 11) FIGS. 12A and 12B are diagrams showing steps for forming an external electrode in the manufacturing method of the present invention. FIG. 12A is a plan view, FIG. 12B is an A sectional view, and FIG. FIG.
As shown in this figure, the external electrodes 27a to 27d are formed on the surface of the second insulating layer 26 while being connected to the columnar electrodes 28a to 28d having exposed end faces, respectively.

The cascaded vertically coupled DMS filter device 20 shown in FIG. 1 can be manufactured by the process procedure as described above.
In addition, the above process steps are performed on a large-sized piezoelectric substrate base material (hereinafter referred to as a piezoelectric wafer), and a plurality of cascaded and vertically coupled DMS filter devices 20 are collectively generated, and then cut and divided into individual pieces. If manufactured in such a way, it can be mass-produced efficiently.

  Piezoelectric substrate or piezoelectric wafer as used herein refers to a piezoelectric material capable of exciting surface acoustic waves such as quartz, lithium tetragonal acid, lithium tantalate, lithium niobate, or langasite, and an excitation function for performing the excitation. It goes without saying that the embodiment of the present invention can be modified by appropriately selecting the size or shape of the vibration space in accordance with the degree of influence of the part on the mechanical physical vibration required. In the above-described embodiment, an example in which the surface acoustic wave device is completed and an external electrode is provided on the outer surface is shown. However, it is sufficient if the degree of freedom of rewiring in the present invention is ensured. Therefore, the external electrode is not always necessary. Also, the external electrode will not be required if the cross section of the columnar electrode exposed from the second insulating layer is sufficiently wide.

1 is a cross-sectional view showing an embodiment of a surface acoustic wave device according to the present invention. It is a figure which shows the example of formation of the surface acoustic wave element in the manufacturing method of the surface acoustic wave apparatus concerning this invention, The figure (a) is a top view, (b) is A sectional drawing, (c) is B sectional drawing. is there. It is a figure which shows the example of formation of the resist film in the manufacturing method of the surface acoustic wave apparatus which concerns on this invention, The figure (a) is a top view, (b) is A sectional drawing, (c) is B sectional drawing. It is a figure which shows the example of formation of the 1st insulating layer in the manufacturing method of the surface acoustic wave apparatus concerning this invention, The figure (a) is a top view, (b) is A sectional drawing, (c) is B sectional drawing. It is. It is a figure which shows the example of formation of the mask (photoresist film) in the manufacturing method of the surface acoustic wave apparatus concerning this invention, The figure (a) is a top view, (b) is A sectional drawing, (c) is B section. FIG. It is a figure which shows the example of partial removal of the 1st insulating film in the manufacturing method of the surface acoustic wave apparatus which concerns on this invention, (a) is a top view, (b) is A sectional drawing, (c) is B It is sectional drawing. It is a figure which shows the example of peeling of the mask and resist film in the manufacturing method of the surface acoustic wave apparatus concerning this invention, The figure (a) is a top view, (b) is A sectional drawing, (c) is B sectional drawing. is there. It is a figure which shows the example of formation of the metal film in the manufacturing method of the surface acoustic wave apparatus which concerns on this invention, The figure (a) is a top view, (b) is A sectional drawing, (c) is B sectional drawing. It is a top view which shows the example of formation of the wiring pattern in the manufacturing method of the surface acoustic wave apparatus concerning this invention. It is a figure which shows the example of arrangement | positioning of the columnar electrode in the manufacturing method of the surface acoustic wave apparatus which concerns on this invention, The figure (a) is a top view, (b) is A sectional drawing, (c) is B sectional drawing. It is a figure which shows the example of filling of the 2nd insulating layer (sealing member) in the manufacturing method of the surface acoustic wave apparatus which concerns on this invention, the figure (a) is a top view, (b) is A sectional drawing, (c) ) Is a B sectional view, (d) is an A sectional view, and (e) is a B sectional view. It is a figure which shows the example of formation of the external electrode in the manufacturing method of the surface acoustic wave apparatus which concerns on this invention, (a) is a top view, (b) is A sectional drawing, (c) is B sectional drawing. It is a figure for demonstrating the electrode structure of a cascaded longitudinally-coupled DMS filter element. It is detailed explanatory drawing of each vertical coupling | bonding DMS filter. It is a longitudinal cross-sectional view which shows the package structural example of the conventional surface acoustic wave apparatus.

Explanation of symbols

DESCRIPTION OF SYMBOLS 1-3 ... IDT electrode 1a, 1b ... Comb electrode 2a, 2b ... Comb electrode 3a, 3b ... Comb electrode 4a, 4b ... Grating reflector 5 ... Vertical coupling DMS filter 6-8 ... IDT electrode 6a, 6b ... Comb electrode 7a , 7b ... Comb electrode 8a, 8b ... Comb electrode 9a, 9b ... Grating reflector 10 ... Vertical coupled DMS filter 11 ... Cascaded vertical coupled DMS filter element IN ... Pad electrode OUT ... Pad electrode E1-E4 ... Pad electrode 20 ... Cascaded vertical Coupled DMS filter device 21 ... Piezoelectric substrate 22 ... Excitation function part 22a, 22b ... Excitation function part 23 ... Pad electrode part 23a-23c ... Pad electrode part 24 ... First insulation layer 25 ... Wiring pattern 26 ... Second insulation layer DESCRIPTION OF SYMBOLS 27 ... External electrode 28 ... Columnar electrode 29 ... Vibration space 30 ... Surface acoustic wave element 31 ... Resist film 32 ... Mask (photograph) The resist film)
33 ... Metal film 101 ... Piezoelectric substrate 102 ... Excitation electrode 103 ... Wiring electrode 104 ... Protective cover 105 ... Columnar electrode 106 ... Sealing member 107 ... Solder bump 108 ... Vibration space

Claims (5)

A surface acoustic wave device in which an excitation function part including a vibration propagation electrode on one main surface of the piezoelectric substrate and a pad electrode part drawn out from the excitation function part by a lead line are formed;
A first insulating layer formed so as to be hollow around the excitation function part on the main surface of the surface acoustic wave element and to cover a region excluding the pad electrode part;
A wiring pattern formed so as to be led out in the vicinity of an edge of the surface acoustic wave element plane while dividing the signal on the first insulating layer and the pad electrode portion as a region;
Columnar electrodes arranged for each of the divided signal-specific wiring patterns,
A surface acoustic wave device comprising: a second insulating layer filled with an exposed end of the columnar electrode; and an external electrode formed on the second insulating layer and connected to the columnar electrode. .   2. The surface acoustic wave device according to claim 1, wherein the hollow of the excitation function unit is formed to be substantially covered with a double layer of the first insulating layer and the wiring pattern. The first insulating layer is a surface acoustic wave device according to claim 1 or 2, characterized in that a vitrified metal oxide glass at ambient temperature region comprises SiO ₂ in component. Forming an excitation function part including a vibration propagation electrode on one main surface of the piezoelectric substrate and a pad electrode part drawn out from the excitation function part by a lead line;
Forming a resist film so as to cover the excitation function unit;
Forming a first insulating layer on the entire principal surface of the piezoelectric substrate;
Masking a region excluding at least one end of the resist film and the pad electrode, and removing the first insulating layer;
Peeling the mask and the resist film;
Forming a metal layer on one entire main surface of the piezoelectric substrate;
A wiring pattern is formed by removing the metal layer by masking the region including at least one end of the resist film and the pad electrode according to the signal while leading to the vicinity of the edge of one main surface of the piezoelectric substrate. Forming, and
Providing a columnar electrode for each of the divided wiring patterns for each signal;
Forming a second insulating layer to fill the sealing member and expose the tip of the columnar electrode;
Forming an external electrode connected to the columnar electrode on the second insulating layer. A method for manufacturing a surface acoustic wave device. In the manufacturing method of the surface acoustic wave device according to claim 4,
A method of manufacturing a surface acoustic wave device, wherein each process is performed on one wafer and then divided into individual pieces.

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