KR20190139395A - Acoustic resonator pakage and method for fabricating the same - Google Patents

Abstract

One aspect of the present invention provides an acoustic resonator package. The acoustic resonator package comprises: a substrate; an acoustic resonator disposed on the substrate and including a first hydrophobic layer; a cap housing the acoustic resonator; a junction unit bonding the substrate and the cap; and a second hydrophobic layer disposed between the acoustic resonator and the junction unit. The hermeticity of the acoustic resonator package may be maintained.

Description

Acoustic resonator package and manufacturing method thereof {ACOUSTIC RESONATOR PAKAGE AND METHOD FOR FABRICATING THE SAME}

The present invention relates to an acoustic resonator package and a method of manufacturing the same.

With the recent rapid development of mobile communication devices, chemical and bio devices, the demand for small lightweight filters, oscillators, resonant elements, acoustic resonant mass sensors, etc. used in such devices Is increasing.

As a means for implementing such a small lightweight filter, an oscillator, a resonator element, an acoustic resonance mass sensor, and the like, a thin film bulk acoustic resonator (FBAR) is known.

FBAR has the advantage of being able to mass-produce at a minimum cost and to be implemented in a very small size. In addition, it is possible to implement a high quality factor (Q) value, which is a major characteristic of the filter, and to use it in the micro frequency band, and especially to the personal communication system (PCS) and digital cordless system (DCS) bands. There is an advantage that it can.

In general, the FBAR has a structure including a resonator formed by sequentially stacking a first electrode, a piezoelectric body, and a second electrode on a substrate.

Referring to the principle of operation of the FBAR, first, by applying electrical energy to the first and second electrodes to induce an electric field in the piezoelectric layer, the electric field causes a piezoelectric phenomenon of the piezoelectric layer to cause the resonator to vibrate in a predetermined direction. As a result, a bulk acoustic wave is generated in the same direction as the vibration direction, causing resonance.

In other words, FBAR is a device that uses a bulk acoustic wave (BAW), the frequency characteristics of the acoustic wave device can be improved and the bandwidth can be widened by increasing the effective electromechanical coupling coefficient (Kt2) of the piezoelectric body. .

United States Patent Application Publication No. 2011-0304412 United States Patent Application Publication No. 2003-0231851

According to an aspect of the present invention, when the acoustic resonator package is used in a humid environment or when it is left at room temperature for a long time, hydroxyl groups (hydroxy group, OH group) are adsorbed inside the acoustic resonator package to increase frequency variation, or improve resonator performance. This is to solve the problem of deterioration.

An acoustic resonator package according to an aspect of the present invention includes a substrate; An acoustic resonator disposed on the substrate and including a first hydrophobic layer; A cap accommodating the acoustic resonator; A bonding portion for bonding the substrate and the cap; And a second hydrophobic layer disposed on a substrate between the acoustic resonator and the junction.

According to another aspect of the present invention, a method of manufacturing an acoustic resonator package includes: forming an acoustic resonator on one surface of a substrate; Forming a first junction on the substrate; Forming a hydrophobic layer on the acoustic resonator and the substrate; And joining the second junction formed on one surface of the cap with the first junction to accommodate the acoustic resonator.

According to the present invention, a hydrophobic layer is formed inside the acoustic resonator package, so that the airtightness of the package is not maintained because the acoustic resonator package is used in a humid environment, when it is left at room temperature for a long time, or some defects occur at the junction of the package. If not, the frequency variation of the acoustic resonator can be minimized and the acoustic resonator performance can be kept uniform.

In addition, by selectively depositing a hydrophobic layer so that a hydrophobic layer is not formed at the junction, the hermeticity of the acoustic resonator package can be maintained by preventing the hydrophobic layer from lowering the bonding force between the substrate and the cap.

1 is a plan view of an acoustic resonator package according to an aspect of the present invention with the cap portion omitted.
2 is a cross-sectional view of FIG. 1.
3 is an enlarged cross-sectional view of an acoustic resonator part of FIG. 2.
Figure 4 shows that the hydroxyl group is adsorbed on the protective layer is not formed hydrophobic layer.
Figure 5 shows that a hydrophobic layer is formed on the protective layer.
6 illustrates an acoustic resonator package (an embodiment) in which a first hydrophobic layer is formed on a protective layer of an acoustic resonator, and a second hydrophobic layer is formed on a substrate between an acoustic resonator and a junction, and a protective layer and an acoustic resonator of an acoustic resonator. A graph showing a change in frequency and humidity over time for an acoustic resonator package (comparative example) in which a hydrophobic layer is not formed on a substrate between junctions.
FIG. 7 schematically shows the molecular structure of a precursor used as an adhesion layer of a hydrophobic layer.
8 schematically shows the molecular structure of the hydrophobic layer.
9 and 10 schematically illustrate an acoustic resonator package including a plurality of acoustic resonators according to other embodiments of the present invention.
11 to 14 illustrate a step of forming an acoustic resonator on one surface of a substrate.
FIG. 15 schematically illustrates a first embodiment of a process of bonding a cap and a substrate in a method of manufacturing an acoustic resonator according to another exemplary embodiment of the present invention.
FIG. 16 schematically illustrates a second embodiment of a process of bonding a cap and a substrate in a method of manufacturing an acoustic resonator according to another aspect of the present invention.
FIG. 17 schematically illustrates a third embodiment of a process of bonding a cap and a substrate in a method of manufacturing an acoustic resonator according to another aspect of the present invention.
FIG. 18 schematically illustrates a process of forming a hydrophobic layer in a method of manufacturing an acoustic resonator according to another exemplary embodiment of the present invention.

Hereinafter, with reference to the drawings will be described in detail a specific embodiment of the present invention. However, the spirit of the present invention is not limited to the embodiments presented, and those skilled in the art who understand the spirit of the present invention may degenerate other inventions or the present invention by adding, changing, or deleting other elements within the scope of the same idea. Other embodiments that fall within the scope of the present invention may be easily proposed, but this will also be included within the scope of the present invention.

In addition, throughout the specification, the fact that a component is 'connected' to another component includes not only the case where these components are 'directly connected', but also when the components are 'indirectly connected' with other components therebetween. Means that. In addition, the term 'comprising' of an element means that the element may further include other elements, not to exclude other elements unless specifically stated otherwise.

Acoustic resonator package

1 is a plan view of an acoustic resonator package according to an aspect of the present invention with the cap portion omitted. 2 is a cross-sectional view of FIG. 1. 3 is an enlarged cross-sectional view of an acoustic resonator part of FIG. 2.

1 to 3, the acoustic resonator package 10 according to an aspect of the present invention includes a substrate 110, an acoustic resonator 100, a cap 220, a junction 210, and a hydrophobic layer 130. Include.

The hydrophobic layer 130 includes a first hydrophobic layer 131 disposed on the acoustic resonator 100 and a second hydrophobic layer 132 disposed on the substrate between the acoustic resonator 100 and the junction 210.

That is, the acoustic resonator package 10 according to an aspect of the present invention is disposed on the substrate 110, the substrate 110, and includes the acoustic resonator 100 and the acoustic resonator 100 including the first hydrophobic layer 131. It includes a cap 220 for receiving, a junction 210 for bonding the substrate 110 and the cap 220 and a second hydrophobic layer 132 disposed between the acoustic resonator and the junction 210.

Although not limited thereto, the acoustic resonator 100 may be a thin film bulk acoustic resonator (FBAR), which will be described below using the thin film bulk acoustic resonator as an example.

The acoustic resonator 100 may include a substrate 110, an insulating layer 115, a membrane layer 150, a cavity C, a resonator 120, a protective layer 127, and a hydrophobic layer 130. .

The substrate 110 may be a silicon substrate. For example, a silicon wafer may be used as the substrate 110, or a silicon on insulator (SOI) type substrate may be used.

An insulating layer 115 may be provided on the upper surface of the substrate 110 to electrically isolate the substrate 110 and the resonator 120. In addition, the insulating layer 115 prevents the substrate 110 from being etched by the etching gas when the cavity C is formed in the acoustic resonator manufacturing process.

In this case, the insulating layer 115 may be formed of at least one of silicon dioxide (SiO ₂ ), silicon nitride (Si ₃ N ₄ ), aluminum oxide (Al ₂ O ₂ ), and aluminum nitride (AlN). The substrate 110 may be formed through any one of chemical vapor deposition, RF magnetron sputtering, and evaporation.

The sacrificial layer 140 is formed on the insulating layer 115, and the cavity C and the etch stop 145 are disposed in the sacrificial layer 140.

The cavity C is formed into an empty space and may be formed by removing a portion of the sacrificial layer 140.

As the cavity C is formed in the sacrificial layer 140, the resonator 120 formed on the sacrificial layer 140 may be formed to be flat throughout.

The etch stop 145 is disposed along the boundary of the cavity C. The etch stop unit 145 is provided to prevent the etching from being performed beyond the cavity area in the cavity C formation process. Therefore, the horizontal area of the cavity C is defined by the etch stop 145, and the vertical area is defined by the thickness of the sacrificial layer 140.

The membrane layer 150 is formed on the sacrificial layer 140 to define the thickness (or height) of the cavity C with the substrate 110. Therefore, the membrane layer 150 is also formed of a material that is not easily removed in the process of forming the cavity (C).

For example, when a halide-based etching gas such as fluorine (F) or chlorine (Cl) is used to remove a portion (eg, cavity region) of the sacrificial layer 140, the membrane layer 150 may be formed as described above. It may be made of a material with low reactivity. In this case, the membrane layer 150 may include at least one of silicon dioxide (SiO ₂ ) and silicon nitride (Si ₃ N ₄ ).

In addition, the membrane layer 150 includes manganese oxide (MgO), zirconium oxide (ZrO ₂ ), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO ₂ ), and aluminum oxide. It is composed of a dielectric layer containing at least one of (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), zinc oxide (ZnO), or aluminum (Al), nickel (Ni), chromium (Cr) , A metal layer containing at least one of platinum (Pt), gallium (Ga), and hafnium (Hf). However, the configuration of the present invention is not limited thereto.

A seed layer (not shown) made of aluminum nitride (AlN) may be formed on the membrane layer 150. In detail, the seed layer may be disposed between the membrane layer 150 and the first electrode 121. The seed layer may be formed using a dielectric or metal having an HCP structure in addition to AlN. In the case of a metal, for example, the seed layer may be formed of titanium (Ti).

The resonator 120 includes a first electrode 121, a piezoelectric layer 123, and a second electrode 125. In the resonator unit 120, the first electrode 121, the piezoelectric layer 123, and the second electrode 125 are stacked in this order. Therefore, in the resonator 120, the piezoelectric layer 123 is disposed between the first electrode 121 and the second electrode 125.

Since the resonator 120 is formed on the membrane layer 150, the membrane layer 150, the first electrode 121, the piezoelectric layer 123, and the second electrode 125 are formed on the substrate 110. In turn, they are stacked to form the resonance part 120.

The resonator 120 may generate a resonance frequency and an anti-resonant frequency by resonating the piezoelectric layer 123 according to signals applied to the first electrode 121 and the second electrode 125.

When the insertion layer 170, which will be described later, is formed, the resonator 120 may include a central portion S in which the first electrode 121, the piezoelectric layer 123, and the second electrode 125 are stacked substantially flat. The insertion layer 170 may be interposed between the first electrode 121 and the piezoelectric layer 123 as an extension part E.

The central portion S is an area disposed in the center of the resonator 120, and the expansion part E is an area disposed along the circumference of the central part S. Therefore, the extended portion E means a region extending outwardly from the central portion (S).

Insertion layer 170 has an inclined surface (L) that becomes thicker as it moves away from the center (S).

In the expansion portion E, the piezoelectric layer 123 and the second electrode 125 are disposed on the insertion layer 170. Therefore, the piezoelectric layer 123 and the second electrode 125 disposed in the expansion portion E have an inclined surface along the shape of the insertion layer 170.

On the other hand, in the present embodiment it is defined that the expansion unit (E) is included in the resonator unit 120, accordingly, the resonance may also be made in the expansion unit (E). However, the present invention is not limited thereto and according to the structure of the expansion unit E, resonance may not be performed at the expansion unit E, but resonance may be performed only at the central portion S.

The first electrode 121 and the second electrode 125 may be formed of a conductor, for example, gold, molybdenum, ruthenium, iridium, aluminum, platinum, titanium, tungsten, palladium, tantalum, chromium, nickel, or the like. It may be formed of a metal including at least one, but is not limited thereto.

In the resonator 120, the first electrode 121 is formed to have a larger area than the second electrode 125, and the first metal layer 180 is formed on the first electrode 121 along the outer edge of the first electrode 121. Is placed. Therefore, the first metal layer 180 may be disposed to surround the second electrode 125.

Since the first electrode 121 is disposed on the membrane layer 150, the first electrode 121 is formed to be flat throughout. On the other hand, since the second electrode 125 is disposed on the piezoelectric layer 123, bending may be formed corresponding to the shape of the piezoelectric layer 123.

The second electrode 125 is disposed entirely in the central portion S, and partially disposed in the expansion portion E. FIG. Thus, the second electrode 125 may be divided into a portion disposed on the piezoelectric portion 123a of the piezoelectric layer 123 and a portion disposed on the bent portion 123b of the piezoelectric layer 123.

More specifically, in the present embodiment, the second electrode 125 is disposed to cover the entire piezoelectric part 123a and a part of the inclined part 1231 of the piezoelectric layer 123. Accordingly, the second electrode 125a disposed in the expansion portion E is formed to have a smaller area than the inclined surface of the inclined portion 1231, and the second electrode 125 is formed in the resonator portion 120 by the piezoelectric layer 123. It is formed with a smaller area.

The piezoelectric layer 123 is formed on the first electrode 121. When the insertion layer 170 to be described later is formed, it is formed on the first electrode 121 and the insertion layer 170.

As the material of the piezoelectric layer 123, zinc oxide (ZnO), aluminum nitride (AlN), doped aluminum nitride, lead zirconate titanate, quartz, or the like may be selectively used. have. The doped aluminum nitride may further include a rare earth metal transition metal or an alkaline earth metal. For example, the rare earth metal may include at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La), and the content of the rare earth metal may be 1 to 20 at%. The transition metal may include at least one of hafnium (Hf), titanium (Ti), zirconium (Zr), tantalum (Ta), and niobium (Nb). Alkaline earth metals may also include magnesium (Mg).

The piezoelectric layer 123 according to the present exemplary embodiment includes a piezoelectric part 123a disposed in the center portion S and a bent portion 123b disposed in the expansion portion E. FIG.

The piezoelectric part 123a is a portion directly stacked on the upper surface of the first electrode 121. Therefore, the piezoelectric part 123a is formed between the first electrode 121 and the second electrode 125 in a flat shape with the first electrode 121 and the second electrode 125.

The curved portion 123b may be defined as an area extending outward from the piezoelectric portion 123a and positioned in the expansion portion E. FIG.

The bent portion 123b is disposed on the insertion layer 170 to be described later, and is formed in a shape that is raised along the shape of the insertion layer 170. The piezoelectric layer 123 is bent at the boundary between the piezoelectric part 123a and the bent part 123b, and the bent part 123b is raised corresponding to the thickness and shape of the insertion layer 170.

The curved part 123b may be divided into an inclined part 1231 and an extension part 1232.

The inclined portion 1231 refers to a portion formed to be inclined along the inclined surface L of the insertion layer 170 to be described later. In addition, the extension part 1232 means a part extending outwardly from the inclined part 1231.

The inclined portion 1231 may be formed parallel to the inclined surface L of the insertion layer 170, and the inclined angle of the inclined portion 1231 may be formed to be the same as the inclined angle of the inclined surface L of the insertion layer 170.

The insertion layer 170 may be disposed along the surface formed by the membrane layer 150, the first electrode 121, and the etch stop 145.

The insertion layer 170 is disposed around the central portion S to support the bent portion 123b of the piezoelectric layer 123. Therefore, the curved portion 123b of the piezoelectric layer 123 may be divided into an inclined portion 1231 and an extension portion 1232 along the shape of the insertion layer 170.

The insertion layer 170 is disposed in an area except the central portion S. For example, the insertion layer 170 may be disposed in the entire region except the central portion S, or may be disposed in a portion of the region.

In addition, at least a portion of the insertion layer 170 is disposed between the piezoelectric layer 123 and the first electrode 121.

The side surface of the insertion layer 170 disposed along the boundary of the central portion S is formed in a shape in which the thickness becomes thicker as the distance from the central portion S increases. As a result, the insertion layer 170 is formed as an inclined surface L having a predetermined inclination angle at a side surface disposed adjacent to the central portion S. FIG.

When the inclination angle θ of the side of the insertion layer 170 is formed to be smaller than 5 °, in order to manufacture this, the thickness of the insertion layer 170 must be formed very thinly or the area of the inclined surface L is excessively large. It is difficult to implement.

In addition, when the inclination angle θ of the side of the insertion layer 170 is greater than 70 °, the inclination angle 1231 of the piezoelectric layer 123 stacked on the insertion layer 170 is greater than 70 °. In this case, since the piezoelectric layer 123 is excessively bent, cracks may occur in the bent portion of the piezoelectric layer 123.

Therefore, in the present embodiment, the inclination angle θ of the inclined surface L may be formed in a range of 5 ° or more and 70 ° or less.

Insert layer 170 is silicon oxide (SiO ₂ ), aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), silicon nitride (SiN), manganese oxide (MgO), zirconium oxide (ZrO ₂ ), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO ₂ ), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), zinc oxide (ZnO) dielectrics, such as a piezoelectric layer ( 123) is made of a different material. In addition, it is also possible to form an area in which the insertion layer 170 is provided as an empty space if necessary. This may be implemented by removing the insertion layer 170 after all the resonator parts 120 are formed in the manufacturing process.

In the present embodiment, the thickness of the insertion layer 170 may be the same as or similar to the thickness of the first electrode 121.

In addition, the thickness of the insertion layer 170 may be formed thinner than the piezoelectric layer 123. Only when the thickness of the piezoelectric layer 123 is thinner, the inclined portion of the piezoelectric layer 123 due to the insertion layer is formed, and cracks may not occur, thereby contributing to the improvement of the resonator performance. The lower limit of the thickness of the insertion layer 170 need not be particularly limited, but the thickness of the insertion layer 170 may be 100 GPa or more in order to easily control the deposition thickness and to ensure thickness uniformity in the deposited wafer.

The resonator 120 according to the present exemplary embodiment configured as described above is spaced apart from the substrate 110 through the cavity C formed as an empty space.

The cavity C may be formed by supplying an etching gas (or etching solution) to the inlet hole (H of FIGS. 1 and 3) during the acoustic resonator manufacturing process to remove a portion of the sacrificial layer 140.

The protective layer 127 is disposed along the surface of the acoustic resonator 100 to protect the acoustic resonator 100 from the outside. The protective layer 127 may be disposed along the surface formed by the second electrode 125, the bent portion 123b of the piezoelectric layer 123, and the insertion layer 170.

The protective layer 127 may be formed of an insulating material of any one of silicon oxide based, silicon nitride based, aluminum oxide based and aluminum nitride based.

In addition, the protective layer 127 may be further disposed on the substrate between the acoustic resonator and the junction, and a second hydrophobic layer 132 may be formed thereon.

The first electrode 121 and the second electrode 125 extend outside the resonator 120, and the first metal layer 180 and the second metal layer 190 are disposed on the upper surface of the extended portion, respectively. .

The first metal layer 180 and the second metal layer 190 include gold (Au), gold-tin (Au-Sn) alloys, copper (Cu), copper-tin (Cu-Sn) alloys, aluminum (Al), and aluminum. It may be made of a material such as germanium (Al-Ge) alloy.

The first metal layer 180 and the second metal layer 190 function as connection wires for electrically connecting the electrodes of the other acoustic resonators disposed adjacent to the electrodes 121 and 125 of the acoustic resonator according to the present embodiment, or externally. Can function as a connection terminal. However, it is not limited thereto.

Meanwhile, although FIG. 2 illustrates a case where the insertion layer 170 is removed below the second metal layer 190, the configuration of the present invention is not limited thereto and may be formed under the second metal layer 190. It is also possible to implement a structure in which the second metal layer 190 is disposed.

The first metal layer 180 penetrates through the insertion layer 170 and the protective layer 127 and is bonded to the first electrode 121.

In addition, as shown in FIG. 3, the first electrode 121 is formed to have a larger area than the second electrode 125, and the first metal layer 180 is formed at a circumferential portion of the first electrode 121.

Therefore, the first metal layer 180 is disposed along the circumference of the resonator unit 120, and thus is disposed in a form surrounding the second electrode 125. However, it is not limited thereto.

On the other hand, as described above, the second electrode 125 according to the present embodiment is stacked on the piezoelectric portion 123a and the inclined portion 1231 of the piezoelectric layer 123. In addition, the portion of the second electrode 125 disposed on the inclined portion 1231 of the piezoelectric layer 123, that is, the second electrode 125 disposed in the expansion portion E, is formed on the inclined surface of the inclined portion 1231. It is placed only on a portion of the slope, not the whole.

The hydrophobic layer 130 is disposed on the protective layer 127.

When the acoustic resonator package is used in a humid environment, or is left at room temperature for a long time, or when some defects occur at the junction of the package and the airtightness of the package is not maintained, in particular, the protective layer and the acoustic resonator of the acoustic resonator package Hydroxyl groups (hydroxy group, OH group) is adsorbed on the substrate between the junction portion has caused a problem that the frequency fluctuation increases due to mass loading, or degrade the resonator performance.

Figure 4 shows that the hydroxyl group is adsorbed on the protective layer is not formed hydrophobic layer, Figure 5 shows that the hydrophobic layer is formed on the protective layer.

Referring to FIG. 4, when the hydrophobic layer is not formed, it is used in a humid environment or when it is left at room temperature for a long time, hydroxyl groups (hydroxy group, OH group) are adsorbed to the protective layer to form hydroxylate. . Since hydrooxalate has high surface energy and is unstable, mass loading occurs because it tries to lower surface energy by adsorbing water.

On the other hand, referring to FIG. 5, when the hydrophobic layer 130 is formed on the protective layer 127, since the surface energy is low and stable, the surface energy is absorbed by adsorbing water and hydroxyl groups (OH group). There is no need to lower it. Therefore, the hydrophobic layer serves to prevent the adsorption of water and hydroxyl groups (OH group) and the like, thereby minimizing frequency variation and maintaining the resonator performance uniformly.

6 illustrates an acoustic resonator package (an embodiment) in which a first hydrophobic layer is formed on a protective layer of an acoustic resonator, and a second hydrophobic layer is formed on a substrate between an acoustic resonator and a junction, and a protective layer and an acoustic resonator of an acoustic resonator. It is a graph showing the change in frequency and humidity with respect to the acoustic resonator package (comparative example) in which the hydrophobic layer is not formed on the substrate between the junctions. In the experimental method, the Examples and Comparative Examples were placed in a moisture absorption chamber, and the frequency change was measured while changing the humidity as shown in FIG. 6.

Referring to FIG. 6, it can be seen that the embodiment has a much smaller frequency change amount due to humidity and time change than the comparative example. In addition, in the case of the embodiment it can be seen that the frequency change amount at the end of the experiment is less than the frequency change amount at the start of the experiment.

In order to improve the adhesion between the hydrophobic layer 130 and the protective layer 127, a precursor may be used. Referring to FIG. 7, the precursor may be (a) hydrocarbon having a silicon head or (b) siloxane having a silicon head.

Referring to FIG. 8, the hydrophobic layer 130 may be a fluorocarbon, but is not limited thereto. The hydrophobic layer 130 may be formed of a material having a contact angle of 90 ° or more after deposition. For example, the hydrophobic layer 130 may contain a fluorine (F) component and may include fluorine (F) and silicon (silicon, Si).

In this case, the hydrophobic layer 130 may be formed of a mono layer or a self-assembled monolayer (SAM), not a polymer, and may be formed to a thickness of 100 μm or less. When the hydrophobic layer 130 is formed of a polymer, the mass due to the polymer affects the resonator 120. However, in the acoustic resonator package according to the exemplary embodiment of the present invention, the hydrophobic layer 130 may be formed as a mono layer or a self-assembled monolayer (SAM), and the acoustic resonator may be formed to a thickness of 100 μm or less. It is possible to minimize the frequency of the change.

In addition, when the hydrophobic layer 130 is formed of a polymer, when the hydrophobic layer is formed in the cavity C through the inflow hole (H of FIGS. 1 and 3), the thickness of the hydrophobic layer in the cavity C becomes uneven. The thickness of the hydrophobic layer in the cavity C close to the inlet hole H may be thick, and the thickness of the hydrophobic layer formed in the center of the cavity C far from the inlet hole H may be thin. However, since the hydrophobic layer 130 according to the embodiment of the present invention is formed of a mono layer or a self-assembled monolayer (SAM), the thickness of the hydrophobic layer 130 according to the position in the cavity C is uniform.

Since the hydrophobic layer 130 is formed after the first metal layer 180 and the second metal layer 190 are formed as described below, the first metal layer 180 and the second metal layer 190 on the protective layer 127. It can be formed except the formed portion.

In addition, a hydrophobic layer may be formed on the first metal layer 180 and the second metal layer 190 according to the material of the first metal layer and the second metal layer. For example, when the first metal layer 180 and the second metal layer 190 are metals having good surface oxidation such as Cu or Al, a hydrophobic layer may also be formed on the first metal layer 180 and the second metal layer 190. Can be formed.

In addition, the hydrophobic layer 130 may be disposed on the upper surface of the cavity (C) in addition to the protective layer. As will be described later, in the step of forming a hydrophobic layer on the protective layer may be formed at the same time as the hydrophobic layer on the protective layer, as well as the upper surface of the cavity (C), as well as at least part of the lower surface and side surfaces of the cavity (C) Can be.

Since the resonator 120 is disposed above the cavity C, the upper surface of the cavity C also affects the frequency change of the acoustic resonator. Therefore, when the hydrophobic layer is formed on the upper surface of the cavity C, it is possible to minimize the change in the frequency of the acoustic resonator.

A plurality of via holes 112 penetrating the substrate 110 are formed on the lower surface of the substrate 110. Connection conductors 115a and 115b are formed in each via hole 112. The connection conductors 115a and 115b may be formed on the inner surface of the via hole 112, that is, the entire inner wall, but are not limited thereto. One end of each of the connection conductors 115a and 115b is connected to the external electrodes 117a and 117b formed on the bottom surface of the substrate 110, and the other end thereof is electrically connected to the first electrode 121 or the second electrode 125. .

For example, the first connection conductor 115a electrically connects the first electrode 121 and the external electrode 117a, and the second connection conductor 115b connects the second electrode 125 and the external electrode 117b. Is electrically connected.

Meanwhile, although only two via holes 112 and two connection conductors 115a and 115b are illustrated and described in FIG. 2, the present invention is not limited thereto and a larger number of via holes 112 and connection conductors may be used as needed. 115a, 115b can be provided.

The cap 220 is provided to protect the acoustic resonator 100 from the external environment.

The cap 220 may be formed in a cover shape having an inner space in which the acoustic resonator 100 is accommodated. Accordingly, the cap 220 is bonded to the substrate in such a manner that the side wall 220a surrounds the periphery of the device 120. In addition, the lower surface of the sidewall 220a is bonded to the substrate 100 by the bonding portion 210.

The material of the cap 220 is not particularly limited, and may be, for example, a silicon wafer, may include a polymer material such as a thermosetting resin, a thermoplastic resin, or the like, or may include a known metal material or a semiconductor material. It may be, but is not limited thereto.

The junction 210 serves to maintain the hermeticity inside the acoustic resonator package by bonding the cap 220 and the substrate 110.

The junction 210 may include a parent material, a melting material, and an alloy thereof, which are commonly used in eutectic bonding or metal diffusion bonding.

For example, the parent material may include Cu, Au, Ag, Ni, Al, Pb, and the like, and the melting material may include Sn, In, Si, Zn, Ge, and the like. have. In addition, these alloys may include Au 3 Sn, Cu 3 Sn, Al-Ge, and the like, but are not limited thereto.

In addition, when the cap 220 is a material containing an organic insulating material, the bonding portion 210 may include a polymer to secure the bonding strength. For example, when the cap 220 is an organic insulating film or Resin Coated Copper (RCC), the junction 210 may include a polymer.

On the other hand, when the hydrophobic layer is formed on the bonding portion 210, there is a risk that the bonding strength is lowered and the hermeticity inside the acoustic resonator package may not be maintained.

When the junction portion 210 is formed using a material that is hard to deposit, such as gold (Au) and gold-tin (Au-Sn) alloys, there is no fear that the bonding strength may be reduced by the hydrophobic layer. For example, referring to the manufacturing method described below, when the first bonding portion 211 includes gold (Au), since the hydrophobic layer is less likely to be deposited on the first bonding portion 211 when the hydrophobic layer is formed, the bonding strength decreases. There is no fear of becoming.

However, in the case where the junction 210` includes a material that is easy to deposit a hydrophobic layer such as copper (Cu), copper-tin (Cu-Sn) alloy, aluminum (Al), aluminum-germanium (Al-Ge) alloy, or the like. In the manufacturing method described below, a process of forming a hydrophobic layer after forming a protective film (B) to reliably prevent the formation of a hydrophobic layer at the first bonding portion 211` and then removing the protective film (B) is performed. Therefore, the second hydrophobic layer 132 may be formed to be spaced apart from the junction. For example, when the first junction 211 ′ includes copper (Cu) or aluminum (Al), the second hydrophobic layer may be formed to be spaced apart from the junction.

In addition, when the bonding portion 210 `` includes a polymer, a hydrophobic layer is formed after forming the protective film B at the portion where the bonding portion is to be formed, and thereafter, a process of removing the protective film B is performed. The second hydrophobic layer 132 may be formed to be spaced apart from the junction. For example, epoxy, siloxane (Siloxane), polyimide (Polyimide), PBO (polybenzoxazole), Novolac (Novolac), benzocyclobutene (BCB), acrylic (Acrylic) and the like may be used, but It is not limited.

However, even if the hydrophobic layer is not formed only in a predetermined area of the junction site, if sufficient bonding strength can be ensured, the second hydrophobic layer may not be formed to be spaced apart from the junction, and thus it is not necessarily formed to be spaced apart from the junction. It should be noted that the second hydrophobic layer does not exclude a form that is not spaced apart from the junction.

9 and 10 schematically illustrate an acoustic resonator package including a plurality of acoustic resonators according to other embodiments of the present invention.

As illustrated in FIGS. 9 and 10, a plurality of acoustic resonators may be disposed in the acoustic resonator package. In addition, according to the arrangement of the plurality of acoustic resonators, a ladder type filter structure, a lattice type filter structure, or a combination thereof may be implemented.

In addition, as shown in FIG. 9, the hydrophobic layer may be formed in a region except for the metal layer of the junction and the acoustic resonator, and as shown in FIG. 10, all of the hydrophobic layers may be formed in the region except for the junction. For example, when the metal layer includes a material that is difficult to deposit a hydrophobic layer such as gold (Au), gold-tin (Au-Sn) alloy, etc., the metal layer may have a shape as shown in FIG. 9, and the metal layer may be copper (Cu), When the hydrophobic layer is formed of a material such as a copper-tin (Cu-Sn) alloy, an aluminum (Al), an aluminum-germanium (Al-Ge) alloy, and the like, may be formed as shown in FIG. 10.

Method of manufacturing an acoustic resonator package

Hereinafter, a method of manufacturing the acoustic resonator package according to the present embodiment will be described, and descriptions overlapping with the above description will be omitted and the description will be given based on the difference.

First, the step of forming an acoustic resonator on one surface of the substrate will be described in detail.

11 to 14 illustrate a step of forming an acoustic resonator on one surface of a substrate.

First, referring to FIG. 11, first, an insulating layer 115 and a sacrificial layer 140 are formed on a substrate 110, and a pattern P penetrating the sacrificial layer 140 is formed. Therefore, the insulating layer 115 is exposed to the outside through the pattern (P).

The insulating layer 115 and the membrane layer 150 include manganese oxide (MgO), zirconium oxide (ZrO ₂ ), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), and hafnium oxide (HfO _2). ), Aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), zinc oxide (ZnO), silicon nitride (SiN) or silicon oxide (SiO ₂ ) and the like, but is not limited thereto.

The pattern P formed on the sacrificial layer 140 may have a trapezoidal cross section having a width of an upper surface wider than that of a lower surface.

The sacrificial layer 140 is partially removed through a subsequent etching process to form a cavity (C of FIG. 2). Accordingly, the sacrificial layer 140 may be made of a material such as polysilicon or polymer which is easy to etch. However, it is not limited thereto.

Subsequently, the membrane layer 150 is formed on the sacrificial layer 140. The membrane layer 150 is a sacrificial layer 140 is formed with a constant thickness along the surface. The thickness of the membrane layer 150 may be thinner than the thickness of the sacrificial layer 140.

The membrane layer 150 may include at least one of silicon dioxide (SiO ₂ ) and silicon nitride (Si ₃ N ₄ ). Manganese oxide (MgO), zirconium oxide (ZrO ₂ ), aluminum nitride (AlN), lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO ₂ ), aluminum oxide (Al ₂ O ₃ ), Dielectric layer containing at least one of titanium oxide (TiO ₂ ) and zinc oxide (ZnO) or aluminum (Al), nickel (Ni), chromium (Cr), platinum (Pt), gallium (Ga) , Hafnium (Hf) may be formed of a metal layer containing at least one material. However, the configuration of the present invention is not limited thereto.

Although not shown, a seed layer may be formed on the membrane layer 150.

The seed layer may be disposed between the membrane layer 150 and the first electrode 121 described later. The seed layer may be made of aluminum nitride (AlN), but is not limited thereto, and may be formed using a dielectric or metal having an HCP structure. For example, when the seed layer is formed of metal, the seed layer may be formed of titanium (Ti).

Subsequently, as shown in FIG. 12, an etch stop layer 145a is formed on the membrane layer 150. The etch stop layer 145a is also filled in the pattern P.

The etch stop layer 145a is formed to a thickness that completely fills the pattern P. FIG. Therefore, the etch-resistant layer 145a may be formed thicker than the sacrificial layer 140.

The etch stop layer 145a may be formed of the same material as the insulating layer 115, but is not limited thereto.

Subsequently, the etch stop layer 145a is removed to expose the membrane layer 150 to the outside.

In this case, a portion filled in the pattern P is left, and the remaining etch stop layer 145a functions as the etch stop unit 145.

Subsequently, as illustrated in FIG. 13, the first electrode 121 is formed on the upper surface of the membrane layer 150.

In the present embodiment, the first electrode 121 may be formed of a conductor, for example, gold, molybdenum, ruthenium, iridium, aluminum, platinum, titanium, tungsten, palladium, tantalum, chromium, nickel, or at least one of them. It may be formed of a metal including, but is not limited thereto.

The first electrode 121 is formed above the region where the cavity (C in FIG. 3) is to be formed.

The first electrode 121 may be formed by removing the unnecessary portion after the conductor layer is formed to cover the entire membrane layer 150.

Subsequently, the insertion layer 170 may be formed as necessary. The insertion layer 170 is formed on the first electrode 121 and may be extended to the upper portion of the membrane layer 150 as necessary. When the insertion layer 170 is formed, the extension part 123b of the resonator part 120 is formed to have a thickness thicker than that of the center part 123a. You can increase the -factor.

The insertion layer 170 is formed to cover the entire surface formed by the membrane layer 150, the first electrode 121, and the etch stop 145, and then a portion disposed in the region corresponding to the central portion S. It can be completed by removing.

Accordingly, the central portion of the first electrode 121 constituting the central portion S is exposed to the outside of the insertion layer 170. In addition, the insertion layer 170 is formed to cover a portion of the first electrode 121 along the circumference of the first electrode 121. Therefore, the edge portion of the first electrode 121 disposed in the expansion portion E is disposed under the insertion layer 170.

Side surfaces of the insertion layer 170 disposed adjacent to the central portion S are formed as the inclined surface (L). Insertion layer 170 is formed in a shape that becomes thinner toward the central portion (S) side, the lower surface of the insertion layer 170 is formed in a form extended to the central portion (S) side than the upper surface of the insertion layer 170. do. In this case, the inclination angle of the inclined surface L of the insertion layer 170 may be formed in a range of 5 ° to 70 ° as described above.

Insert layer 170 is, for example, silicon oxide (SiO ₂ ), aluminum nitride (AlN), aluminum oxide (Al ₂ O ₃ ), silicon nitride (SiN), manganese oxide (MgO), zirconium oxide (ZrO ₂ ), It may be formed of a dielectric such as lead zirconate titanate (PZT), gallium arsenide (GaAs), hafnium oxide (HfO ₂ ), aluminum oxide (Al ₂ O ₃ ), titanium oxide (TiO ₂ ), zinc oxide (ZnO), etc. The piezoelectric layer 123 is formed of a different material.

Subsequently, a piezoelectric layer 123 is formed on the first electrode 121 and the insertion layer 170.

In this embodiment, the piezoelectric layer 123 may be formed of aluminum nitride (AlN). However, the material of the piezoelectric layer 123 is not limited thereto, and zinc oxide (ZnO), doped aluminum nitride, lead zirconate titanate, quartz, or the like may be selectively used. Can be. The doped aluminum nitride may further include rare earth metal, transition metal, or alkaline earth metal. For example, the rare earth metal may include at least one of scandium (Sc), erbium (Er), yttrium (Y), and lanthanum (La), and the content of the rare earth metal may be 1 to 20 at%. . The transition metal may include at least one of hafnium (Hf), titanium (Ti), zirconium (Zr), tantalum (Ta), and niobium (Nb). Alkaline earth metals may also include magnesium (Mg).

In addition, the piezoelectric layer 123 is formed of a material different from that of the insertion layer 170.

The piezoelectric layer 123 may be formed by forming a piezoelectric material on the entire surface formed by the first electrode 121 and the insertion layer 170 and then partially removing unnecessary portions. In the present embodiment, after forming the second electrode 125, the piezoelectric layer 123 is completed by removing unnecessary portions of the piezoelectric material. However, the present invention is not limited thereto, and the piezoelectric layer 123 may be completed before the second electrode 125 is formed.

The piezoelectric layer 123 is formed to cover a portion of the first electrode 121 and the insertion layer 170, and thus the piezoelectric layer 123 is formed on the surface of the first electrode 121 and the insertion layer 170. It is formed along the shape.

As described above, only the portion corresponding to the central portion S of the first electrode 121 is exposed to the outside of the insertion layer 170. Therefore, the piezoelectric layer 123 formed on the first electrode 121 is positioned in the central portion S. FIG. The bent portion 123b formed on the insertion layer 170 is positioned in the expansion portion E. As shown in FIG.

Next, the second electrode 125 is formed on the piezoelectric layer 123. In the present embodiment, the second electrode 125 may be formed of a conductor, for example, gold, molybdenum, ruthenium, iridium, aluminum, platinum, titanium, tungsten, palladium, tantalum, chromium, nickel, or at least one of them. It may be formed of a metal including, but is not limited thereto.

The second electrode 125 is basically formed on the piezoelectric portion 123a of the piezoelectric layer 123. As described above, the piezoelectric portion 123a of the piezoelectric layer 123 is located in the central portion S. As shown in FIG. Therefore, the second electrode 125 disposed on the piezoelectric layer 123 is also disposed in the central portion S. FIG.

In addition, in the present exemplary embodiment, the second electrode 125 is formed on the inclined portion 1231 of the piezoelectric layer 123. As described above, the second electrode 125 is partially disposed in the entire central portion S and the expansion portion E. FIG. By partially arranging the second electrode 125 in the extension 123b, a remarkably improved resonance performance may be provided.

Subsequently, a protective layer 127 is formed as shown in FIG. 14.

The protective layer 127 is formed along the surface formed by the second electrode 125 and the piezoelectric layer 123. In addition, although not shown, the protective layer 127 may be formed on the insertion layer 170 exposed to the outside.

The protective layer 127 may be formed of one insulating material of silicon oxide based, silicon nitride based, aluminum nitride based, and aluminum oxide based, but is not limited thereto.

Subsequently, the protective layer 127 and the piezoelectric layer 123 are partially removed to partially expose the first electrode 121 and the second electrode 125, and the first metal layer 180 and the first portion are respectively exposed to the exposed portions. 2 metal layer 190 is formed.

The first metal layer 180 and the second metal layer 190 include gold (Au), gold-tin (Au-Sn) alloys, copper (Cu), copper-tin (Cu-Sn) alloys, aluminum (Al), and aluminum. It may be made of a material such as germanium (Al-Ge) alloy, and may be formed by depositing on the first electrode 121 or the second electrode 125, but is not limited thereto.

Next, the cavity C is formed.

The cavity C is formed by removing a portion of the sacrificial layer 140 located inside the etch stop 145, and the sacrificial layer 140 removed in the process may be removed by an etching method. have.

When the sacrificial layer 140 is formed of a material such as polysilicon or a polymer, the sacrificial layer 140 is a dry etching using a halide-based etching gas (eg, XeF ₂ ) such as fluorine (F) or chlorine (Cl). It may be removed through a dry etching method.

Subsequently, a process of further etching the protective layer thickness may be performed to obtain a desired frequency characteristic.

After the acoustic resonator is formed on the substrate according to the method described above, the acoustic resonator and the hydrophobic layer are formed on the substrate, and then the acoustic resonator is accommodated by a cap to manufacture the acoustic resonator package.

Hereinafter, the process of bonding the cap and the substrate will be described first in detail, and then the process of forming the hydrophobic layer will be described.

FIG. 15 schematically illustrates a first embodiment of a process of bonding a cap and a substrate in a method of manufacturing an acoustic resonator according to another aspect of the present invention.

Referring to FIG. 15, after the acoustic resonator is formed on the substrate by the method described above, the first junction 211 is formed on the substrate 110. The first junction 211 may include a parent material used in eutectic bonding or metal diffusion bonding, for example, Cu, Au, Ag, Ni, Al, Pb, or the like. It may be, but is not limited thereto.

However, according to the first embodiment, since a process of forming a separate barrier layer is not performed, a hydrophobic layer may be formed at the first junction 211, thereby lowering the bond strength, and thus, hermeticity inside the acoustic resonator package. This may not be maintained. Therefore, according to the first embodiment, it is preferable that the first junction portion 211 includes Au which is difficult to deposit a hydrophobic layer.

Subsequently, the hydrophobic layer 130 is formed on the acoustic resonator and the substrate according to the hydrophobic layer forming method described below.

Subsequently, the junction 210 is formed by joining the second junction 212 formed on one surface of the cap to the first junction 211 to accommodate the acoustic resonator.

In this case, the bonding may be eutectic bonding or metal diffusion bonding, and the second bonding portion 212 is usually melted in eutectic bonding or metal diffusion bonding. Material may be included, for example, Sn, In, Si, Zn, Ge, or the like.

Eutectic bonding refers to the formation of intermetallic compounds by bonding between two sides of the bonding material when melting between two materials occurs at a temperature lower than the melting point of the two materials. As a result, the bonding portion 210 in which bonding is completed may include a parent material, a melting material, and an alloy thereof.

On the other hand, when the bonding portion is made of a material that is easy to deposit a hydrophobic layer, it is preferable to form a separate barrier film (B) as in the second and third embodiments described below so that the hydrophobic layer is not formed in the bonding portion. The description overlapping with the first embodiment is omitted.

FIG. 16 schematically illustrates a second embodiment of a process of bonding a cap and a substrate in a method of manufacturing an acoustic resonator according to another exemplary embodiment of the present invention.

Referring to FIG. 16, after the acoustic resonator is formed on the substrate according to the above-described method, the first junction 211 ′ is formed on the substrate.

Next, the prevention film B is formed in the outer surface of the 1st bonding part 211 '. Since the barrier layer B is later removed, the barrier layer B may be formed of any material as long as it is possible to prevent the hydrophobic layer from being deposited on the first junction 211 ′. For example, the prevention film B may be formed using a photoresist, a resin in the form of a film, or the like.

Subsequently, the hydrophobic layer 130 is formed on the acoustic resonator and the substrate according to the hydrophobic layer forming method described below. After forming the hydrophobic layer 130, a step of removing the barrier layer B is performed. As the barrier layer B formed between the first junction 211 ′ and the second hydrophobic layer 132 is removed, the second hydrophobic layer 132 may have a shape spaced apart from the first junction 211 ′. have.

After the prevention film B is removed, the second bonding portion 212 ′ formed on one surface of the cap 220 is bonded to the first bonding portion 211 ′ to form the bonding portion 210 to accommodate the acoustic resonator.

In the case of the second embodiment, the first junction 211 ′ may be preferably applied when the hydrophobic layer is easily deposited, including one or more of Cu and Al, and the first junction 211 ′ is the hydrophobic layer. Of course, this can also be applied to a material that is difficult to deposit.

FIG. 17 schematically illustrates a third embodiment of a process of bonding a cap and a substrate in a method of manufacturing an acoustic resonator according to another aspect of the present invention.

Referring to FIG. 17, after the acoustic resonator is formed on the substrate according to the above-described method, the barrier layer B is formed at the position where the junction portion 210 ″ is to be formed in the substrate 110.

Subsequently, the hydrophobic layer 130 is formed on the acoustic resonator and the substrate according to the hydrophobic layer forming method described below.

Subsequently, the protective film B is removed to form a junction 210 ″ on the substrate. In consideration of manufacturing errors, the barrier layer B may be set slightly larger than the junction portion 210 ″, whereby the second hydrophobic layer 132 may have a shape spaced apart from the junction portion 211 ″.

The cap 220 ″ is then bonded to the junction 210 ″ to accommodate the acoustic resonator.

Meanwhile, in the third embodiment, the junction 210 ″ may include a polymer and the cap 220 ″ may include an organic insulating material. When the cap 220 ″ includes an organic insulating material, it is preferable to bond the cap 220 ″ to the substrate 110 using a polymer in terms of securing adhesive strength.

Hereinafter, the hydrophobic layer forming method will be described in detail.

FIG. 18 schematically illustrates a process of forming a hydrophobic layer in a method of manufacturing an acoustic resonator according to another exemplary embodiment of the present invention.

The hydrophobic layer 130 may be formed by depositing a hydrophobic material by a chemical vapor deposition (CVD) method.

Hydrooxalate (hydroxylate) is formed on the surface of the protective layer 127 made of SiO ₂ of FIG. 18. The surface of the protective layer 127 may be surface treated by performing a hydrolyze silane reaction by using a precursor having a silicon head in such a hydroxylate.

Thereafter, when the fluorocarbon functional group is formed on the surface of the protective layer, the hydrophobic layer 130 is formed on the protective layer 127 as shown in FIG. 19.

In addition, the surface treatment may be omitted depending on the material of the protective layer, and the hydrophobic layer 130 may be formed by forming fluorocarbon functional groups on the protective layer 127.

In the aforementioned hydrophobic layer forming step, the hydrophobic layer 132 is formed on the substrate between the junction and the acoustic resonator.

In addition, a hydrophobic layer 131 may be formed on the upper surface of the cavity C through the inflow hole (H of FIGS. 1 and 3), and the lower surface and the side surface of the cavity C as well as the upper surface of the cavity C may be formed. The hydrophobic layer 131 may be formed on at least a portion thereof, and the hydrophobic layer 131 may be formed on all of the top, bottom, and side surfaces of the cavity C.

In addition, the hydrophobic layer 130 may be formed of a monolayer or a self-assembled monolayer (SAM) rather than a polymer. Accordingly, the thickness of the hydrophobic layer 130 can be formed to 100 μm or less, and the mass load due to the hydrophobic layer 130 can be prevented from being applied to the resonator 120, and the thickness of the hydrophobic layer 130 can be prevented. May be uniform.

Although the embodiments of the present invention have been described in detail above, the present invention is not limited to the above-described embodiments and the accompanying drawings, and is intended to be limited by the appended claims.

Accordingly, various forms of substitution, modification, and alteration may be made by those skilled in the art without departing from the technical spirit of the present invention described in the claims, which are also within the scope of the present invention. something to do.

10: acoustic resonator package
100: acoustic resonator
110: substrate
210: junction
220: cap
120: resonator
121: first electrode
123: piezoelectric layer
125: second electrode
127: protective layer
130: hydrophobic layer
140: sacrificial layer
150: membrane layer
170: insertion layer
180, 190: metal layer

Claims (17)

Board;
An acoustic resonator disposed on the substrate and including a first hydrophobic layer;
A cap accommodating the acoustic resonator;
A bonding portion for bonding the substrate and the cap; And
And a second hydrophobic layer disposed on a substrate between the acoustic resonator and the junction.
The method of claim 1,
The junction comprises an acoustic resonator package comprising at least one of Au and Au alloys.
The method of claim 1,
The junction comprises at least one of Cu, a Cu alloy, Al and an Al alloy,
The second hydrophobic layer is formed in the acoustic resonator package spaced apart from the junction.
The method of claim 1,
The junction comprises a polymer,
The second hydrophobic layer is formed in the acoustic resonator package spaced apart from the junction.
The method of claim 1,
The acoustic resonator,
An insulating layer disposed on the substrate;
A membrane layer disposed on the insulating layer;
A cavity formed by the insulating layer and the membrane layer;
A resonator disposed on the cavity and having a first electrode, a piezoelectric layer, and a second electrode stacked thereon; And
And a protective layer disposed on the resonator,
And the first hydrophobic layer is formed on the protective layer.
The method of claim 5,
The first and second electrodes extend to the outside of the resonator and include first and second metal layers respectively disposed on the extended first and second electrodes.
And the first hydrophobic layer is further disposed on the first and second metal layers.
The method of claim 6,
The first and second metal layers include at least one of Cu and Al.
The method of claim 5,
And the first hydrophobic layer is further disposed on an upper surface of the cavity.
The method of claim 8,
The first hydrophobic layer is further disposed on at least a portion of the bottom and side of the cavity acoustic resonator package.
The method of claim 1,
The first and second hydrophobic layers are mono resonators or self-assembled monolayers.
The method of claim 1,
Wherein the first and second hydrophobic layers contain a fluorine (F) component.
The method of claim 11,
The first and second hydrophobic layers further comprise a silicon (Si) component.
Forming an acoustic resonator on one surface of the substrate;
Forming a first junction on the substrate;
Forming a hydrophobic layer on the acoustic resonator and the substrate; And
And joining the second junction formed on one surface of the cap with the first junction to accommodate the acoustic resonator.
The method of claim 13,
Forming the acoustic resonator,
Forming an insulating layer on the substrate;
Forming a sacrificial layer on the insulating layer and forming a pattern penetrating the sacrificial layer;
Forming a membrane layer on the sacrificial layer;
Sequentially forming a first electrode, a piezoelectric layer, and a second electrode on the membrane layer to form a resonance part;
Removing a portion of the sacrificial layer to form a cavity; And
Forming a protective layer on the resonator; Method of manufacturing an acoustic resonator package comprising a.
The method of claim 13,
And the first junction comprises Au.
The method of claim 13,
And forming a barrier layer on an outer surface of the first junction after forming the first junction.
And removing the barrier layer after forming the hydrophobic layer and before bonding the cap and the substrate.
Forming an acoustic resonator on one surface of the substrate;
Forming a protective film at a position where a junction is to be formed in the substrate;
Forming a hydrophobic layer on the acoustic resonator and the substrate;
Removing the barrier layer and forming a junction in the substrate; And
And bonding a cap to the junction to accommodate the acoustic resonator.

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