CN113097232B - Display panel, manufacturing method of display panel and display device - Google Patents
Display panel, manufacturing method of display panel and display device Download PDFInfo
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- CN113097232B CN113097232B CN202110340232.1A CN202110340232A CN113097232B CN 113097232 B CN113097232 B CN 113097232B CN 202110340232 A CN202110340232 A CN 202110340232A CN 113097232 B CN113097232 B CN 113097232B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 32
- 239000010409 thin film Substances 0.000 claims abstract description 180
- 239000000758 substrate Substances 0.000 claims abstract description 120
- 239000003990 capacitor Substances 0.000 claims abstract description 54
- 238000000034 method Methods 0.000 claims abstract description 34
- 239000000463 material Substances 0.000 claims description 28
- 239000010408 film Substances 0.000 claims description 15
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 10
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000000059 patterning Methods 0.000 claims description 3
- 230000000694 effects Effects 0.000 abstract description 14
- 239000010410 layer Substances 0.000 description 186
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 10
- 238000010586 diagram Methods 0.000 description 10
- 229920005591 polysilicon Polymers 0.000 description 9
- 239000011787 zinc oxide Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 229910052738 indium Inorganic materials 0.000 description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- ZXVONLUNISGICL-UHFFFAOYSA-N 4,6-dinitro-o-cresol Chemical compound CC1=CC([N+]([O-])=O)=CC([N+]([O-])=O)=C1O ZXVONLUNISGICL-UHFFFAOYSA-N 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- -1 for example Inorganic materials 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000008707 rearrangement Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
- H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
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- Microelectronics & Electronic Packaging (AREA)
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- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
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Abstract
The embodiment of the invention discloses a display panel, a manufacturing method of the display panel and a display device. The display panel includes a substrate; the first thin film transistor, the second thin film transistor and the storage capacitor are arranged on the same side of the substrate; the storage capacitor comprises a first electrode, a second electrode and an insulating layer arranged between the first electrode and the second electrode, and the second electrode is arranged on one side of the first electrode far away from the substrate; the first electrode and the first gate electrode of the first thin film transistor are arranged in the same layer; the second electrode and the second gate electrode of the second thin film transistor are arranged in the same layer; the vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second thin film transistor on the substrate. The technical scheme provided by the embodiment of the invention improves the reliability and stability of the first thin film transistor and the second thin film transistor, and solves the problems that the existing display panel is complex in process and the display effect is affected by mutual interference of the thin film transistors of different types.
Description
Technical Field
The embodiment of the invention relates to the technical field of display, in particular to a display panel, a manufacturing method of the display panel and a display device.
Background
With the development of display technology and the improvement of living standard of people, the requirements on the display panel are higher and higher. The conventional display device includes a pixel circuit and a driving circuit for driving the pixel circuit, wherein the pixel circuit and the driving circuit each include a thin film transistor, and the display device which is increasingly light and thin is required to be manufactured on the same substrate, however, the conventional display panel has the problems that the process is complicated and the manufactured thin film transistors of different types interfere with each other to affect the display effect.
Disclosure of Invention
The embodiment of the invention provides a display panel, a manufacturing method of the display panel and a display device, which are used for solving the problems that the existing display panel is complex in process and thin film transistors of different types interfere with each other to influence the display effect.
In order to realize the technical problems, the invention adopts the following technical scheme:
In a first aspect, an embodiment of the present invention provides a display panel, including:
A substrate;
The first thin film transistor, the second thin film transistor and the storage capacitor are arranged on the same side of the substrate;
The storage capacitor comprises a first electrode, a second electrode and an insulating layer arranged between the first electrode and the second electrode, and the second electrode is arranged on one side of the first electrode far away from the substrate; the first electrode and the first gate electrode of the first thin film transistor are arranged in the same layer; the second electrode and the second gate electrode of the second thin film transistor are arranged in the same layer;
the vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second thin film transistor on the substrate.
Further, the first thin film transistor further comprises a first active layer arranged on one side of the first gate electrode adjacent to the substrate, and a first gate insulating layer arranged between the first active layer and the first gate electrode;
the second thin film transistor further comprises a second active layer arranged on one side of the second gate electrode adjacent to the substrate, and a second gate insulating layer arranged between the second active layer and the second gate electrode;
the second active layer is arranged on one side of the first gate insulating layer away from the substrate.
Further, the vertical projection of the second gate insulating layer on the substrate does not overlap with the vertical projection of the first thin film transistor on the substrate.
Further, the first gate insulating layer and the second gate insulating layer are different in material;
The second gate insulating layer is of a material different from that of the insulating layer.
Further, the first gate electrode is multiplexed as the first electrode.
Further, the first thin film transistor is a low temperature polysilicon thin film transistor, and the second thin film transistor is an oxide semiconductor thin film transistor.
In a second aspect, an embodiment of the present invention provides a method for manufacturing a display panel, including:
Providing a substrate;
manufacturing a first thin film transistor, a second thin film transistor and a storage capacitor on the same side of a substrate; the storage capacitor comprises a first electrode, a second electrode and an insulating layer arranged between the first electrode and the second electrode, wherein the second electrode is arranged on one side of the first electrode far away from the substrate; the first electrode and the first gate electrode of the first thin film transistor are arranged in the same layer; the second electrode and the second gate electrode of the second thin film transistor are arranged in the same layer; the vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second thin film transistor on the substrate.
Further, manufacturing a first thin film transistor, a second thin film transistor and a storage capacitor on the same side of the substrate includes:
forming a first active layer of a first thin film transistor on a substrate;
Forming a first gate insulating layer of a first thin film transistor on a side of the first active layer away from the substrate;
forming a second active layer of a second thin film transistor on a side of the first gate insulating layer away from the substrate;
Forming a second gate insulating layer of a second thin film transistor on a side of the second active layer away from the substrate;
Forming a first gate electrode of the first thin film transistor and a first electrode of the storage capacitor on a side of the second gate insulating layer away from the substrate;
forming an insulating layer on one side of the first gate electrode away from the substrate, wherein the vertical projection of the insulating layer on the substrate does not overlap with the vertical projection of the second active layer on the substrate;
a second gate electrode of the second thin film transistor and a second electrode of the storage capacitor are formed on a side of the insulating layer away from the substrate.
Further, forming a second gate insulating layer on a side of the second active layer away from the substrate, including:
Forming a gate material layer on a side of the second active layer away from the substrate;
patterning the gate material layer to form a second gate electrode insulating layer, wherein the vertical projection of the second gate insulating layer on the substrate is not overlapped with the vertical projection of the first active layer on the substrate;
forming a first gate electrode and a first electrode of a storage capacitor on a side of the second gate insulating layer away from the substrate, comprising:
The first gate electrode is multiplexed to a first electrode.
In a third aspect, an embodiment of the present invention provides a display device, including any of the display panels of the first aspect.
According to the display panel, the manufacturing method of the display panel and the display device, the first electrode of the storage capacitor and the first gate electrode of the first thin film transistor are arranged in the same layer, the second electrode of the storage capacitor and the second gate electrode of the second thin film transistor are arranged in the same layer, the number of masks is reduced, the process complexity is reduced, the thickness of the display panel is thinner, the vertical projection of the insulating layer on the substrate and the vertical projection of the second thin film transistor on the substrate are not overlapped, the insulating layer between the first electrode of the storage capacitor and the second electrode of the storage capacitor and each film layer of the second thin film transistor are not shared, the materials of the insulating layer or the second thin film transistor can be independently arranged according to the requirement, the mutual interference between the second thin film transistor and the storage capacitor is reduced, the manufacturing process of each film layer of the second thin film transistor is not influenced by the process of the storage capacitor, the process of each film layer is better optimized, the reliability of the first thin film transistor and the second thin film transistor is improved, the reliability of the existing thin film transistor is not influenced, and the mutual interference effect of the display device is not solved.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the following description will briefly explain the drawings needed in the description of the embodiments of the present invention, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and other drawings may be obtained according to the contents of the embodiments of the present invention and these drawings without inventive effort for those skilled in the art.
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
Fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a display panel according to another embodiment of the present invention;
FIG. 4 is a schematic structural diagram of another display panel according to an embodiment of the present invention;
FIG. 5 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention;
FIG. 6 is a flowchart of another method for manufacturing a display panel according to an embodiment of the present invention;
FIG. 7 is a flowchart of a method for fabricating a display panel according to another embodiment of the present invention;
Fig. 8 is a schematic structural diagram of a display device according to an embodiment of the present invention.
Detailed Description
The invention is described in further detail below with reference to the drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting thereof. It should be further noted that, for convenience of description, only some, but not all of the structures related to the present invention are shown in the drawings.
Just as the display panel which is increasingly light and thin and is mentioned in the background art needs to be manufactured on the same substrate, the inventor discovers that the display effect of the display panel can be improved by simplifying the manufacturing process, and the problems that the process is complex and the display effect is affected by mutual interference of the thin film transistors of different types in the existing display panel are solved.
Based on the above technical problems, the present embodiment proposes the following solutions:
Fig. 1 is a schematic structural diagram of a display panel according to an embodiment of the present invention. Referring to fig. 1, the display panel provided in the embodiment of the invention includes a substrate 1, a first thin film transistor 2, a second thin film transistor 3 and a storage capacitor 4 disposed on the same side of the substrate 1, the storage capacitor 4 includes a first electrode 41, a second electrode 42 and an insulating layer 43 disposed between the first electrode 41 and the second electrode 42, the second electrode 42 is disposed on a side of the first electrode 41 away from the substrate 1, the first electrode 41 is disposed on the same layer as the first gate electrode 11 of the first thin film transistor 2, the second electrode 42 is disposed on the same layer as the second gate electrode 21 of the second thin film transistor 3, and a vertical projection of the insulating layer 43 on the substrate 1 and a vertical projection of the second thin film transistor 3 on the substrate 1 do not overlap.
Specifically, the display panel includes a driving circuit including a thin film transistor and a storage capacitor, and the thin film transistor may include a low temperature polysilicon thin film transistor and an oxide semiconductor thin film transistor. The first thin film transistor 2 includes a first gate electrode 11, a first active layer 12, and a first source/drain electrode (the first source/drain electrode is not shown in fig. 1), the second thin film transistor 3 includes a second gate electrode 21, a second active layer 22, and a second source/drain electrode (the second source/drain electrode is not shown in fig. 1), the first thin film transistor 2 and the second thin film transistor 3 may be of different types, that is, the first active layer 12 and the second active layer 22 are different materials, and the first thin film transistor 2 is illustratively a low temperature polysilicon thin film transistor, the first active layer 12 is made of low temperature polysilicon, the second thin film transistor 3 is an oxide semiconductor thin film transistor, and the second active layer 22 is made of a metal oxide, for example, indium gallium zinc oxide. By arranging the first electrode 41 of the storage capacitor 4 and the first gate electrode 11 of the first thin film transistor 2 in the same layer, and arranging the second electrode 42 and the second gate electrode 21 of the second thin film transistor 3 in the same layer, the number of masks can be reduced, the process complexity can be reduced, the thickness of the thin film transistor can be reduced, and the thickness of the display panel can be reduced.
The first thin film transistor 2 and the second thin film transistor 3 are distributed along the direction parallel to the substrate 1, the size of the storage capacitor 4 can be adjusted by adjusting the insulating layer 43, the vertical projection of the insulating layer 43 on the substrate 1 and the vertical projection of the second thin film transistor 3 on the substrate 1 are not overlapped, the insulating layer 43 is disconnected at the second thin film transistor 3, the insulating layer 43 between the first electrode 41 and the second electrode 42 of the storage capacitor 4 is not shared by all the film layers of the second thin film transistor 3, the second thin film transistor 3 and the storage capacitor 4 are mutually independent, the working characteristics of the thin film transistor cannot be influenced when the insulating layer 43 is adjusted, the materials of the insulating layer 43 or the second thin film transistor 3 can be respectively arranged according to requirements, the mutual interference between the second thin film transistor 3 and the storage capacitor 4 is reduced, and all the film layers of the second thin film transistor 3 are independently adjustable. According to the display panel provided by the embodiment, the first electrode of the storage capacitor and the first gate electrode of the first thin film transistor are arranged in the same layer, the second electrode of the storage capacitor and the second gate electrode of the second thin film transistor are arranged in the same layer, so that the number of masks is reduced, the process complexity is reduced, the thickness of the display panel is thinner, the vertical projection of the insulating layer on the substrate and the vertical projection of the second thin film transistor on the substrate are not overlapped, the insulating layer between the first electrode of the storage capacitor and the second electrode is not shared with each film layer of the second thin film transistor, the second thin film transistor and the storage capacitor are independent of each other, the materials of the insulating layer or the second thin film transistor can be independently arranged according to the requirement, the mutual interference between the second thin film transistor and the storage capacitor is reduced, the manufacturing process of each film layer of the second thin film transistor is not influenced by the process of the storage capacitor, the processes of each film layer are better optimized, the reliability and the stability of the first thin film transistor and the second thin film transistor are improved, and the display panel has different types of the display effect due to the fact that the existing process has different interference effects.
Optionally, with continued reference to fig. 1, the first thin film transistor 2 of the display panel provided in the embodiment of the present invention further includes a first active layer 12 disposed on a side of the first gate electrode 11 adjacent to the substrate 1, and a first gate insulating layer 13 disposed between the first active layer 12 and the first gate electrode 11; the second thin film transistor 3 further includes a second active layer 22 disposed on a side of the second gate electrode 21 adjacent to the substrate 1, and a second gate insulating layer 23 disposed between the second active layer 22 and the second gate electrode 21; the second active layer 22 is disposed on a side of the first gate insulating layer 13 remote from the substrate 1.
Specifically, the first gate insulating layer 13 is used for insulating the first active layer 12 and the first gate electrode 11, the second gate insulating layer 23 is used for insulating the second active layer 22 and the second gate electrode 21, the first active layer 12 and the second active layer 22 are located on different planes by arranging the second active layer 22 on the side, far away from the substrate 1, of the first gate insulating layer 13, and the first active layer 12 and the second active layer 22 are spaced by the first gate insulating layer 13, so that the manufacturing processes of the first active layer 12 and the second active layer 22 cannot affect each other, the processes of the first active layer 12 and the second active layer 22 are better optimized, the mutual influence between the reliability and the stability of the first thin film transistor 2 and the second thin film transistor 3 is improved, and the display effect of the display panel is improved.
Optionally, fig. 2 is a schematic structural diagram of another display panel according to an embodiment of the present invention. On the basis of the above-described embodiments, referring to fig. 2, the vertical projection of the second gate insulating layer 23 of the display panel provided by the embodiment of the present invention on the substrate 1 does not overlap with the vertical projection of the first thin film transistor 2 on the substrate 1.
Specifically, the arrangement is such that the first thin film transistor 2 and the second gate insulating layer 23 of the second thin film transistor 3 are not shared, and conditions such as high temperature are required in the process of manufacturing the first thin film transistor 2, so that the working characteristics such as on threshold voltage and off current of the second thin film transistor 3 are not affected, the materials and manufacturing processes of the first gate insulating layer 13 of the first thin film transistor 2 and the second gate insulating layer 23 of the second thin film transistor 3 can be adjusted according to the characteristics of the first thin film transistor 2 and the second thin film transistor 3 respectively, the mutual influence between the first gate insulating layer 13 and the second gate insulating layer 23 is avoided, the good working characteristics of the first thin film transistor 2 and the second thin film transistor 3 are ensured, the reliability and the stability of the first thin film transistor 2 and the second thin film transistor 3 are improved, and the display effect of the display panel is improved.
Optionally, with continued reference to fig. 2 on the basis of the above embodiment, the first gate insulating layer 13 and the second gate insulating layer 23 of the display panel provided in the embodiment of the present invention are different in material; the material of the second gate insulating layer 23 is different from that of the insulating layer 43.
Specifically, the arrangement is such that the first gate insulating layer 13 and the second gate insulating layer 23 and the insulating layer 43 can function independently as different film layers, respectively, reducing the influence between the first thin film transistor 2 and the second thin film transistor 3 and the storage capacitor 4. The material of the insulating layer 43 may be one or a combination of SiN X、SiOX、SiNOX、AL2O3 and HFO 2, and the insulating layer 43 may be formed by an etching process, such as a dry etching or a wet etching process.
Optionally, with continued reference to fig. 2, the first gate electrode 11 of the display panel provided in the embodiment of the present invention is multiplexed into the first electrode 41 on the basis of the above embodiment.
Specifically, the storage capacitor 4 and the first thin film transistor 2 occupy a small area, and the thickness of the display panel is further reduced.
Alternatively, based on the above embodiment, with continued reference to fig. 2, the first thin film transistor 2 of the display panel provided in the embodiment of the present invention may be a low-temperature polysilicon thin film transistor, and the second thin film transistor 3 may be an oxide semiconductor thin film transistor.
Specifically, the material of the first active layer 12 may be P-Si, the material of the second active layer 22 may be metal oxide, and the low-temperature polysilicon thin film transistor has low power consumption and high reliability, and can be used as a driving thin film transistor, so that the driving effect on an Organic Light Emitting Diode (OLED) is better, and the low-temperature polysilicon thin film transistor and the oxide semiconductor thin film transistor with different characteristics are arranged on the same substrate, thereby further improving the display effect of the display panel.
Optionally, fig. 3 is a schematic structural diagram of another display panel according to an embodiment of the present invention. On the basis of the above embodiments, referring to fig. 3, the display panel provided by the embodiment of the present invention may further include an interlayer insulating layer 5 disposed on a side of the second gate electrode 21 away from the substrate 1; a first source electrode 14 and a first drain electrode 15 of the low-temperature polysilicon thin film transistor disposed on a side of the interlayer insulating layer 5 remote from the substrate 1; a second source electrode 24 and a second drain electrode 25 of the oxide thin film transistor provided on a side of the interlayer insulating layer 5 away from the substrate 1; a first planarization layer 6 provided on a side of the interlayer insulating layer 5 away from the substrate 1; an anode layer 7 disposed on a side of the first planarization layer 6 remote from the substrate 1; the anode layer 7 is electrically connected to the first source electrode 14.
Fig. 4 is a schematic structural diagram of another display panel according to an embodiment of the invention. On the basis of the above embodiment, referring to fig. 4, the display panel provided by the embodiment of the present invention may further include a third source electrode 16 and a fourth source electrode 26 disposed on a side of the first planarization layer 6 away from the substrate 1; the third source electrode 16 is electrically connected to the first source electrode 14; the fourth source electrode 26 is electrically connected to the second source electrode 24. A second planarizing layer 8 disposed between the anode layer 7 and the third and fourth source electrodes 16 and 26; the second planarizing layer 8 covers the first planarizing layer 6 and the third and fourth source electrodes 16 and 26. Thus, the data line (Vdata) and the driving voltage line (VDD) may be disposed in different layers, increasing the wiring selectivity.
Optionally, fig. 5 is a flowchart of a method for manufacturing a display panel according to an embodiment of the present invention. On the basis of the above embodiment, referring to fig. 5, the method for manufacturing a display panel according to the embodiment of the present invention includes:
S101, providing a substrate;
S102, manufacturing a first thin film transistor, a second thin film transistor and a storage capacitor on the same side of a substrate; the storage capacitor comprises a first electrode, a second electrode and an insulating layer arranged between the first electrode and the second electrode, wherein the second electrode is arranged on one side of the first electrode far away from the substrate; the first electrode and the first gate electrode of the first thin film transistor are arranged in the same layer; the second electrode and the second gate electrode of the second thin film transistor are arranged in the same layer; the vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second thin film transistor on the substrate.
According to the manufacturing method of the display panel, the first thin film transistor, the second thin film transistor and the storage capacitor are manufactured on the same side of the substrate, the first electrode of the storage capacitor and the first gate electrode of the first thin film transistor are arranged on the same layer, the second electrode of the storage capacitor and the second gate electrode of the second thin film transistor are arranged on the same layer, the number of masks is reduced, the complexity of the process is reduced, the thickness of the display panel is enabled to be thinner, the vertical projection of the insulating layer on the substrate and the vertical projection of the second thin film transistor on the substrate are not overlapped, the insulating layer between the first electrode and the second electrode of the storage capacitor and each film layer of the second thin film transistor are not shared, the manufacturing process of each film layer of the second thin film transistor is not influenced by the process of the storage capacitor, the processes of each film layer are better optimized, the reliability and the stability of the first thin film transistor and the second thin film transistor are improved, and the problem that the existing display panel is complex in process and the display effect of different types of thin film transistors is affected by each other is solved.
Optionally, fig. 6 is a flowchart of another method for manufacturing a display panel according to an embodiment of the present invention. On the basis of the above embodiment, referring to fig. 6, the method for manufacturing a display panel according to the embodiment of the present invention includes:
S101, providing a substrate.
S201, forming a first active layer of a first thin film transistor on a substrate.
S202, forming a first gate insulating layer of the first thin film transistor on one side of the first active layer away from the substrate.
And S203, forming a second active layer of the second thin film transistor on one side of the first gate insulating layer away from the substrate.
And S204, forming a second gate insulating layer of the second thin film transistor on the side of the second active layer away from the substrate.
S205, forming a first gate electrode of the first thin film transistor and a first electrode of the storage capacitor on a side of the second gate insulating layer away from the substrate.
S206, forming an insulating layer on one side of the first gate electrode away from the substrate, wherein the vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second active layer on the substrate.
S207, forming a second gate electrode of the second thin film transistor and a second electrode of the storage capacitor on a side of the insulating layer away from the substrate.
Specifically, the material of the first active layer may be a semiconductor material such as polysilicon, and the material of the second active layer may be a metal oxide, and may include ZnO-based materials such as ZnO, indium (In) -ZnO, gallium (Ga) -In-ZnO, and the like, for example. In some embodiments, the second active layer material may be a metal-containing, e.g., indium gallium zinc oxide. The material of the insulating layer may be SiN X、SiOX、SiNOX、AL2O3 and HFO 2; the insulating layer may be formed by an etching process, such as a dry etching or a wet etching process, or a combination of several of these. The first gate insulating layer and the second insulating layer may be made of inorganic materials, and the first gate electrode, the second gate electrode, and the first electrode and the second electrode of the storage capacitor may be made of metals.
Optionally, fig. 7 is a flowchart of a manufacturing method of a display panel according to another embodiment of the present invention. On the basis of the above embodiment, referring to fig. 7, the method for manufacturing a display panel according to the embodiment of the present invention includes:
S101, providing a substrate.
S201, forming a first active layer of a first thin film transistor on a substrate.
S202, forming a first gate insulating layer of the first thin film transistor on one side of the first active layer away from the substrate.
And S203, forming a second active layer of the second thin film transistor on one side of the first gate insulating layer away from the substrate.
And S301, forming a gate material layer on one side of the second active layer away from the substrate.
S302, patterning the gate material layer to form a second gate electrode insulating layer, wherein the vertical projection of the second gate insulating layer on the substrate is not overlapped with the vertical projection of the first active layer on the substrate.
S303, forming a first gate electrode on one side, far away from the substrate, of the second gate insulating layer, wherein the first gate electrode is multiplexed into a first electrode.
Specifically, the gate material layer is patterned to form the second gate electrode insulating layer, wherein the vertical projection of the second gate insulating layer on the substrate and the vertical projection of the first active layer on the substrate do not overlap, so that the first gate insulating layer of the first thin film transistor and the second gate insulating layer of the second thin film transistor are not shared, the working characteristics such as the on threshold voltage and the off current of the first thin film transistor are not influenced in the process of manufacturing the second thin film transistor, the first gate insulating layer of the first thin film transistor and the second gate insulating layer of the second thin film transistor can be independently selected according to the requirements, the materials and the manufacturing process can be independently selected, the mutual interference between the first gate insulating layer and the second gate insulating layer is avoided, the good working characteristics of the first thin film transistor and the second thin film transistor are ensured, the reliability and the stability of the first thin film transistor and the second thin film transistor are improved, and the display effect of the display panel is improved. In addition, the first gate electrode is multiplexed into the first electrode, so that the area of the first gate electrode and the metal film layer where the first electrode is located is smaller, and the thickness of the display panel is further reduced.
Optionally, fig. 8 is a schematic structural diagram of a display device according to an embodiment of the present invention. On the basis of the above embodiments, referring to fig. 8, a display device 100 according to an embodiment of the present invention includes a display panel 200 according to any of the above embodiments. The beneficial effects of the display panel provided by the above embodiments are not described herein. The display apparatus 100 may include a mobile terminal such as a mobile phone, a tablet computer, and a wearable device.
Note that the above is only a preferred embodiment of the present invention and the technical principle applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, while the invention has been described in connection with the above embodiments, the invention is not limited to the embodiments, but may be embodied in many other equivalent forms without departing from the spirit or scope of the invention, which is set forth in the following claims.
Claims (10)
1. A display panel, comprising:
A substrate;
the first thin film transistor, the second thin film transistor and the storage capacitor are arranged on the same side of the substrate;
The storage capacitor comprises a first electrode, a second electrode and an insulating layer arranged between the first electrode and the second electrode, and the second electrode is arranged on one side of the first electrode far away from the substrate; the first electrode and the first gate electrode of the first thin film transistor are arranged in the same layer; the second electrode and the second gate electrode of the second thin film transistor are arranged in the same layer;
The vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second thin film transistor on the substrate;
the insulating layer of the storage capacitor is not shared with each film layer of the second thin film transistor, and the insulating layer of the storage capacitor is disconnected at the second thin film transistor.
2. The display panel of claim 1, wherein the display panel comprises,
The first thin film transistor further comprises a first active layer arranged on one side of the first gate electrode adjacent to the substrate, and a first gate insulating layer arranged between the first active layer and the first gate electrode;
the second thin film transistor further comprises a second active layer arranged on one side of the second gate electrode adjacent to the substrate, and a second gate insulating layer arranged between the second active layer and the second gate electrode;
the second active layer is arranged on one side of the first gate insulating layer away from the substrate.
3. The display panel of claim 2, wherein the display panel comprises,
The vertical projection of the second gate insulating layer on the substrate is not overlapped with the vertical projection of the first thin film transistor on the substrate.
4. The display panel of claim 2, wherein the display panel comprises,
The first gate insulating layer and the second gate insulating layer are different in material;
The second gate insulating layer is made of a material different from that of the insulating layer.
5. The display panel of claim 1, wherein the display panel comprises,
The first gate electrode is multiplexed to the first electrode.
6. The display panel of claim 1, wherein the display panel comprises,
The first thin film transistor is a low-temperature polycrystalline silicon thin film transistor, and the second thin film transistor is an oxide semiconductor thin film transistor.
7. A method for manufacturing a display panel, comprising:
Providing a substrate;
manufacturing a first thin film transistor, a second thin film transistor and a storage capacitor on the same side of the substrate; the storage capacitor comprises a first electrode, a second electrode and an insulating layer arranged between the first electrode and the second electrode, wherein the second electrode is arranged on one side of the first electrode far away from the substrate; the first electrode and the first gate electrode of the first thin film transistor are arranged in the same layer; the second electrode and the second gate electrode of the second thin film transistor are arranged in the same layer; the vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second thin film transistor on the substrate; the insulating layer of the storage capacitor is not shared with each film layer of the second thin film transistor, and the insulating layer of the storage capacitor is disconnected at the second thin film transistor.
8. The method of manufacturing a display panel according to claim 7, wherein the manufacturing the first thin film transistor, the second thin film transistor, and the storage capacitor on the same side of the substrate comprises:
forming a first active layer of a first thin film transistor on the substrate;
forming a first gate insulating layer of a first thin film transistor on a side of the first active layer away from the substrate;
forming a second active layer of a second thin film transistor on a side of the first gate insulating layer away from the substrate;
forming a second gate insulating layer of a second thin film transistor on a side of the second active layer away from the substrate;
Forming a first gate electrode of a first thin film transistor and a first electrode of a storage capacitor on a side of the second gate insulating layer away from the substrate;
forming an insulating layer on one side of the first gate electrode away from the substrate, wherein the vertical projection of the insulating layer on the substrate is not overlapped with the vertical projection of the second active layer on the substrate;
And forming a second gate electrode of a second thin film transistor and a second electrode of the storage capacitor on one side of the insulating layer away from the substrate.
9. The method of claim 8, wherein,
The forming a second gate insulating layer on a side of the second active layer away from the substrate includes:
forming a gate material layer on a side of the second active layer away from the substrate;
Patterning the gate material layer to form the second gate electrode insulating layer, wherein the vertical projection of the second gate insulating layer on the substrate is not overlapped with the vertical projection of the first active layer on the substrate;
forming a first gate electrode and a first electrode of a storage capacitor on a side of the second gate insulating layer away from the substrate, comprising:
The first gate electrode is multiplexed to the first electrode.
10. A display device comprising the display panel according to any one of claims 1 to 6.
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| CN108231795A (en) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | Array substrate, production method, display panel and display device |
| CN109727996A (en) * | 2017-10-26 | 2019-05-07 | 乐金显示有限公司 | Thin-film transistor array base-plate and organic light-emitting display device with it |
| CN110867459A (en) * | 2019-11-27 | 2020-03-06 | 厦门天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
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| CN1658026A (en) * | 2004-02-16 | 2005-08-24 | 曾世宪 | Reflection liquid crystal display device and its manufacturing method |
| CN109727996A (en) * | 2017-10-26 | 2019-05-07 | 乐金显示有限公司 | Thin-film transistor array base-plate and organic light-emitting display device with it |
| CN108231795A (en) * | 2018-01-02 | 2018-06-29 | 京东方科技集团股份有限公司 | Array substrate, production method, display panel and display device |
| CN110867459A (en) * | 2019-11-27 | 2020-03-06 | 厦门天马微电子有限公司 | Display panel, manufacturing method thereof and display device |
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