CN113097041B - Method for treating parts and components to prevent generation of pollutant and plasma treatment apparatus - Google Patents
Method for treating parts and components to prevent generation of pollutant and plasma treatment apparatus Download PDFInfo
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- CN113097041B CN113097041B CN201911339687.0A CN201911339687A CN113097041B CN 113097041 B CN113097041 B CN 113097041B CN 201911339687 A CN201911339687 A CN 201911339687A CN 113097041 B CN113097041 B CN 113097041B
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
- H01J37/32495—Means for protecting the vessel against plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/32—Processing objects by plasma generation
- H01J2237/33—Processing objects by plasma generation characterised by the type of processing
- H01J2237/334—Etching
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- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
The invention discloses a part processing method and a plasma processing device for preventing pollutants, wherein the processing method comprises the following steps: placing the parts in a vacuum reaction cavity; placing a silicon wafer in the vacuum reaction chamber; generating a silicon coating: introducing a process gas into the vacuum reaction chamber, the process gas comprising NH 3 And Ar; and applying a radio frequency signal to the vacuum reaction cavity, wherein the radio frequency signal excites the processing gas into plasma, and the plasma reacts with silicon in the silicon wafer to generate a silicon coating deposited on the surface of the part. The invention adopts very low-cost treatment gas and coating process, realizes uniform coating of parts possibly contacting with process gas plasma in ion etching cavities such as gas spray heads and the like, and isolates Y of the parts 2 O 3 Coating or Al 2 O 3 The SiC coating protective layer is in direct contact with the plasma, so that the pollution of microparticles is reduced to the greatest extent, the production efficiency is improved, and the production cost is reduced.
Description
Technical Field
The invention relates to a plasma etching process, in particular to a part processing method and a plasma processing device for preventing pollutants.
Background
Contamination of the microparticles in the etch chamber is an important issue in chip production. Serious cavity contamination can cause shorting, block etch (block etch) of the integrated circuit, etc. Therefore, as feature sizes continue to shrink, the number and size of microparticles (PA) in the etch chamber is also becoming more and more critical. For example, in the age of 0.13-0.11 μm, the etched cavity detects microparticles with a size of more than 0.16 μm, so that the safety of the etched chip can be ensured. But when reaching the 10nm technology node, the number of microparticles >0.045 μm must be monitored.
For the source of microparticles, there are mainly two: on the one hand is etchedCarbon-containing byproducts generated in the process. For etching the organic mask layer material, the main gas is NH 3 ,N 2 /H 2 Etc. During etching, a portion of the carbon nitrogen polymer may be deposited on the chamber walls, including the upper electrode and the regions around the periphery of the wafer. On the other hand, due to the high activity free radicals and high energy ions in the plasma, the modification of the cavity material, especially the upper electrode gas Shower (SH) is caused. This modification will result in the upper electrode Y 2 O 3 Corrosion of the material, thereby forming the source of PA. At the same time, the remanufacturing also reduces the service life of the gas spray head, and increases the cost of COC (cost of consumable) and consumables.
Disclosure of Invention
The invention aims to solve the technical problem that the size and the number of microparticles in an etching cavity are required to be strictly controlled along with the continuous increase of the chip size, and reduces the process gas plasma and Y by designing a special coating process 2 O 3 And the like, prevents the electrode materials polluted by the parts from being directly contacted, thereby controlling the pollution degree of the microparticles and prolonging the service life of the parts.
In order to achieve the above object, the present invention provides a method for treating a component to prevent the generation of contaminants, comprising the steps of:
placing the parts in a vacuum reaction cavity;
placing a silicon wafer in the vacuum reaction cavity;
generating a silicon coating:
introducing a processing gas into the vacuum reaction cavity, wherein the processing gas comprises NH 3 And Ar;
and applying a radio frequency signal to the vacuum reaction cavity, wherein the radio frequency signal excites the processing gas into plasma, and the plasma reacts with silicon in the silicon wafer to generate silicon coating deposited on the surface of the part.
Preferably, the surface of the part is provided with a protective layer for preventing plasma corrosion.
Preferably, the protective layer is Y 2 O 3 Coating or Al 2 O 3 A SiC coating.
Preferably, the component is a component in contact with the plasma in the vacuum reaction chamber, and comprises at least one of a gas shower head, an inner wall of the reaction chamber, a grounding ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring and a substrate holding frame.
Preferably, the parts are parts subjected to a plurality of organic layer etching processes.
Preferably, the step of placing the silicon wafer in the vacuum reaction chamber is preceded by a pre-cleaning process of the components placed in the vacuum reaction chamber, wherein the cleaning pre-process comprises a high bias cleaning process.
Preferably, the process gas of the high bias cleaning treatment is O 2 /CF 4/ Ar。
Preferably, after the silicon coating is generated, a high bias cleaning step is also performed according to the requirement, and the high bias cleaning step is used for removing the silicon coating on the surface of the part, so that the effective control of the thickness of the silicon coating is realized.
Preferably, the high bias cleaning step and the silicon plating step are performed periodically.
Preferably, the process gas NH is excited by the RF signal 3 The generated hydrogen free radicals react with silicon in the silicon wafer to generate hydrogenated silicon, and the hydrogenated silicon is deposited on the surface of the part under the bombardment of Ar ions to form the silicon coating.
Preferably, the process gas further comprises CH 4 。
Preferably, the process conditions of the plasma treatment are as follows: the pressure range is 20 Mt-100 Mt (ton, mt for short, 1 mT=100 MPa); the radio frequency range is 25-60 mhz; the flow rate of the mixed gas is as follows: NH (NH) 3 The flow rate of Ar is in the range of 200-1000 sccm, CH is in the range of 100-1000 sccm 4 The flow rate of (C) is in the range of 0-100 sccm.
Preferably, the radio frequency is in a continuous mode or a pulse mode.
Preferably, the thickness of the silicon coating is 10nm-50nm.
The invention also provides a part for plasma processing environment, which comprises a part body, wherein the surface of the body is provided with a protective layer for preventing plasma corrosion, and the protective layer is Y 2 O 3 Coating or Al 2 O 3 SiC coating
A silicon coating film coated on the outer surface of the protective layer; the silicon coating is formed by adopting the treatment method.
The invention also provides a gas spray head for plasma etching, which comprises:
a gas shower head body;
a protective layer coated on the surface of the body for preventing plasma corrosion, wherein the protective layer is Y 2 O 3 Coating or Al 2 O 3 A SiC coating; a kind of electronic device with high-pressure air-conditioning system
And the silicon coating is coated on the outer surface of the protective layer, and is formed by adopting the treatment method.
The present invention also provides a plasma processing apparatus comprising: a plasma processing chamber, and a component in the plasma processing chamber in contact with the plasma, the component having the characteristics described above.
The invention reduces plasmas and Y through a special coating process 2 O 3 The direct contact of parts such as spray heads of the coating controls the pollution degree of microparticles and prolongs the content of Y 2 O 3 The lifetime (lifetime) of the showerhead of the coating.
The invention uses the very low-cost processing gas and the coating process, realizes the uniform coating of the parts possibly contacting the plasma of the processing gas in the ion etching cavity such as the gas spray head and the like, and isolates the Y of the parts 2 O 3 Coating or Al 2 O 3 The direct contact between the SiC coating protective layer and the plasma can reduce pollution caused by microparticles to the greatest extent, improve production efficiency and reduce production cost.
Drawings
Fig. 1 is a flow chart of a new processing method of etching a chamber provided in embodiment 1.
FIG. 2 shows that the mixture of example 2 and comparative examples 1-3 contains Y under different aging conditions 2 O 3 A graph of the gas showerhead surface Y content as a function of the gas showerhead surface depth.
FIG. 3 shows Y in example 2 and comparative examples 1-3 under different aging conditions 2 O 3 A graph of the Si content of the gas showerhead surface as a function of the gas showerhead surface depth.
Fig. 4 is a schematic diagram of a Capacitively Coupled Plasma (CCP) etching apparatus treated by the method for treating a component to prevent the generation of contaminants according to the present invention.
Fig. 5 is a schematic structural view of an inductively coupled plasma reactor (ICP) etching apparatus treated by the method for treating a component to prevent the generation of contaminants according to the present invention.
Detailed Description
The following further describes aspects of the invention with reference to the drawings and examples.
The technical idea of the invention is to design a novel process for ageing (chamber seasoning) a vacuum reaction chamber, wherein the process comprises the steps of 2 O 3 The gas spray heads of the protective layers such as the coating and the like uniformly form a coating layer containing Si, and the gas spray heads are protected, so that the pollution of microparticles is reduced to the greatest extent, the production efficiency is improved, and the production cost is reduced.
The same principle applies to the treatment of parts that require protection from the generation of contaminants. The surface of the part is provided with a protective layer for preventing plasma corrosion, and the protective layer can be Y 2 O 3 Coating or Al 2 O 3 A SiC coating. The parts refer to parts in the vacuum reaction cavity, which are contacted with plasma, and comprise at least one of a gas spray head, an inner wall of the reaction cavity, a grounding ring, a movable ring, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring and a substrate holding frame.
The invention provides a part treatment method for preventing pollutants, which comprises the following steps:
placing the parts to be treated in a vacuum reaction cavity;
placing a silicon wafer in the vacuum reaction cavity;
generating a silicon coating:
introducing a processing gas into the vacuum reaction cavity, wherein the processing gas comprises NH 3 、Ar、CH 4 ；
And applying a radio frequency signal to the vacuum reaction cavity, wherein the radio frequency signal excites the processing gas into plasma, and the plasma reacts with silicon in the silicon wafer to generate silicon coating deposited on the surface of the part.
With Si wafers (wafer) as wafers for ageing, with NH 3 /Ar/CH 4 The gas is used as a reaction gas for treatment, and the aging of a vacuum reaction chamber (chamber) is carried out; pressure: 20 Mt-100 Mt, RF (radio frequency) frequency: 25-60 mhz; gas flow rate NH 3 The flow rate is 100 sccm-1000 sccm, ar flow rate is 200-1000 sccm, CH 4 The flow rate is 0-100 sccm.
Under the excitation of the radio frequency signal, NH 3 The generated hydrogen free radicals (H) react with silicon in the silicon wafer to generate hydrogenated silicon, and the hydrogenated silicon is deposited on the surface of the part under the bombardment of Ar ions to form the silicon coating. The specific reaction mechanism is as follows:
NH 3 +e→NH+H*
Ar+e→Ar++2e
xH*+Si→SiHx。
SiHx can be redeposited on the surfaces of parts such as a gas spray header and the like to become a Si deposition layer, and the physical bombardment effect of Ar+ can accelerate the deposition speed of the Si deposition layer and accelerate passivation (passivation).
The radio frequency may be in a continuous mode or a pulsed mode.
After the silicon coating is generated, a high bias cleaning step can be performed according to the requirement, and the high bias cleaning step is used for removing the silicon coating on the surface of the part, so that the effective control of the thickness of the silicon coating is realized. The high bias cleaning step and the silicon coating film generating step can be periodically and alternately performed to control the thickness of the silicon coating film to be 10nm-50nm.
Example 1
A new method for processing an etching cavity is shown in fig. 1, which comprises the following steps:
s1, to install brand new Y 2 O 3 In a plasma gas treatment device of a gas shower head (as an upper electrode) of a coating layer, O is introduced 2 /CF 4 The Ar gas mixture performs high bias cleaning (high bias SH cleaning) on the gas spray header to remove some polluted or suspended microparticles in the installation or component transportation links. It should be noted that in some embodiments, the high bias cleaning step is not required here.
S2, after cleaning, placing a silicon wafer into the vacuum reaction cavity. NH is introduced into the vacuum reaction cavity 3 And Ar as a process gas to perform an aging (curing) process on the surface coating of SH. And applying a radio frequency signal to the vacuum reaction cavity, wherein the radio frequency signal excites the processing gas into plasma, and the plasma reacts with silicon in the silicon wafer to generate silicon coating deposited on the surface of the part.
S3, performing an organic film etching process.
In the production process, whether the number of the microparticles meets the product requirement is monitored on line. If the number of the microparticles is abnormal or reaches a set value, suspending the etching of the organic film, and repeating the steps S1 to S2, namely cleaning the gas spray head again to remove Y 2 O 3 And (3) the hydrogenated silicon film on the surface is aged.
The aging treatment can effectively treat Y 2 O 3 A silicon coating layer (layer) containing Si is uniformly coated on the upper electrode to protect the upper electrode from Y on the surface of the gas spray head 2 O 3 The coating falls onto the wafer to be processed thereby controlling contamination of the microparticles, especially the Y-containing microparticles, in the chamber.
Example 2
The same procedure as in example 1 was followed except that the aging gas was changed to NH 3 /Ar/CH 4 And forming a silicon coating film on the surface of the gas spray header.
The thickness of the silicon coating is controlled by periodically alternating the aging process with the high bias cleaning.
After the aging silicon coating treatment in the method of example 2, organic film etching production was performed, and when the production was completed to 300 pieces, the number of the monitored microparticles was 1, which was far below the standard of 5. The gas showerhead was tested and the results are shown in figures 2-3.
As shown in FIG. 2, it is shown that Y is contained 2 O 3 The content of the Y on the surface of the gas spray header is changed along with the depth of the surface layer of the gas spray header: the atomic percentage of Y is less than 5% at the depth below 20nm inwards from the outer surface of the spray header, and gradually increases at the depth between 20nm and 40nm until the depth is above 60nm, and the atomic percentage of Y is gradually stable and is about 40%. It can be seen that Y is contained 2 O 3 After the surface of the gas spray header is treated by the silicon coating, Y 2 O 3 Is effectively isolated.
As shown in FIG. 3, it is shown that Y is contained 2 O 3 The Si content of the surface of the gas spray header varies with the depth of the surface layer of the gas spray header: the atomic percentage of Si is stabilized at 30% -35% at the depth below 20nm inwards from the outer surface of the spray header, and is gradually reduced until the atomic percentage of Si is above 60nm at the depth between 20nm and 40nm, so that the Si is hardly detected. The silicon coating is positioned on the outer surface layer of the gas spray header.
When the increase of the micro-particle number on the surface of the produced wafer or the near-approach of the standard value is monitored, the production is stopped, and O is introduced into the vacuum reaction chamber 2 /CF 4 And (3) carrying out high-bias cleaning on the gas spray head by Ar mixed gas to remove residual silicon coating and other micro-particle impurities on the surface of the gas spray head, then putting a silicon wafer into the vacuum reaction cavity as an aging wafer, and carrying out aging treatment again to form the silicon coating.
Comparative example 1
For Y completely new or after wet cleaning 2 O 3 Gas spraying head for performing gas spraying with plasmaThe surface of the head is cleaned to remove some of the contaminating or suspended micro-particles from the mounting or component transport links. Then carrying out conventional aging treatment on the reaction cavity, taking a silicon wafer as an aging wafer, wherein the aging treatment gas adopts N 2 /H 2 . Then the production processes such as plasma etching and the like are carried out.
However, during the production process, due to Y 2 O 3 Is directly exposed to the plasma as shown in figure 2. The radicals generated by the dissociation of the gas can further erode the surface of the gas showerhead, causing damage to that surface and the formation of a source of microparticles. After each periodic maintenance by adopting the method, the number of the microparticles with the particle size of more than 0.045 μm is monitored to be 0, after 5 PR sheets are produced, 1 microparticle with the particle size of more than 0.045 μm is monitored, when 30 PR sheets are produced, the microparticles with the particle size of more than 0.045 μm are monitored to be greatly increased to 11, and when 100 PR sheets are produced, the microparticles with the particle size of more than 0.045 μm are even increased to 73. However, according to the production standard, the number of microparticles per wafer must not exceed 5.
After aging treatment by the method of comparative example 1, organic film etching production was performed, and when the production was completed to 300 sheets, the gas shower head was inspected, and the results are shown in fig. 2 to 3.
As shown in FIG. 2, it is shown that Y is contained 2 O 3 The content of the Y on the surface of the gas spray header is changed along with the depth of the surface layer of the gas spray header: the atomic percentage of Y detected by the outermost layer is 30%, the atomic percentage of Y is gradually increased to be more than 40% from the outer surface of the shower head to the depth of 20nm inwards, and the atomic percentage of Y is kept unchanged when the depth is more than 20 nm. It can be seen that Y is contained 2 O 3 After the surface of the gas spray header is aged, Y 2 O 3 Hardly isolated.
As shown in FIG. 3, it is shown that Y is contained 2 O 3 The Si content of the surface of the gas spray header varies with the depth of the surface layer of the gas spray header: the atomic percent of Si in the outermost layer is slightly higher than 0 (trace detected) from the outer surface of the spray header inwards, and the depth of less than 20nm is reduced to 0. It can be seen that Y is contained 2 O 3 Almost no silicon coating film is formed on the surface of the gas spray head.
Comparative example 2
The same method as in example 1 is adopted, wherein the aging gas is NH 3 /Ar/CH 4 The gas, at this point, was cut off and the process was exactly the same as in example 2. Immediately after aging treatment with O 2 /CF 4 The Ar mixed gas is subjected to high bias cleaning. Then, organic film etching production was performed, and when the production was carried out to 300 sheets, the gas shower head was inspected, and the results were as shown in fig. 2 to 3.
As shown in FIG. 2, it is shown that Y is contained 2 O 3 The content of the Y on the surface of the gas spray header is changed along with the depth of the surface layer of the gas spray header: the atomic percentage of Y detected by the outermost layer is 30%, the atomic percentage of Y is gradually increased to be more than 40% from the outer surface of the shower head to the depth of 20nm inwards, and the atomic percentage of Y is kept unchanged when the depth is more than 20 nm. It can be seen that Y is contained 2 O 3 The surface of the gas spray header is subjected to the aging treatment to form a silicon coating film, and the silicon coating film is subjected to O 2 /CF 4 The Ar mixed gas is completely removed after high bias cleaning.
As shown in FIG. 3, it is shown that Y is contained 2 O 3 The Si content of the surface of the gas spray header varies with the depth of the surface layer of the gas spray header: inward from the outer surface of the showerhead, si was barely detectable. It can be seen that O 2 /CF 4 The high bias cleaning of the Ar mixed gas can completely remove Si in the silicon coating.
According to the experiment, after the silicon coating is generated, a high-bias cleaning step can be performed according to the requirement, so that the silicon coating on the surface of the part is removed, and the effective control of the thickness of the silicon coating is realized.
Comparative example 3
Aging treatment was carried out by the method of comparative example 1, followed immediately by O 2 /CF 4 The Ar mixed gas is subjected to high bias cleaning. Then, organic film etching production was performed, and when the production was carried out to 300 sheets, the gas shower head was inspected, and the results were as shown in fig. 2 to 3.
As shown in FIG. 2, it is shown that Y is contained 2 O 3 The content of the Y on the surface of the gas spray header is changed along with the depth of the surface layer of the gas spray header:the atomic percentage of Y detected by the outermost layer is less than 30%, the atomic percentage of Y is gradually increased to more than 40% from the outer surface of the shower head to the depth of 20nm inwards, and the atomic percentage of Y is kept unchanged when the depth is more than 20 nm. It can be seen that Y is contained 2 O 3 After the surface of the gas spray header is aged, Y 2 O 3 Hardly isolated.
As shown in FIG. 3, it is shown that Y is contained 2 O 3 The Si content of the surface of the gas spray header varies with the depth of the surface layer of the gas spray header: inward from the outer surface of the showerhead, the atomic percent outermost layer of Si was slightly above 0, lower than that detected in comparative example 1, and had fallen to 0 below 20nm depth. It can be seen that Y is contained after the treatment by the method of comparative example 3 2 O 3 Almost no silicon coating film is formed on the surface of the gas spray head.
It can be seen that only at NH 3 The effective Si passivation layer can be formed by aging treatment under plasma. With other gases, e.g. N 2 /H 2 There is no similar effect.
Example 4
A Capacitively Coupled Plasma (CCP) etching apparatus is an apparatus that generates plasma in a reaction chamber by means of capacitive coupling from a radio frequency power source applied to a plate and is used for etching. As shown in fig. 4, a schematic structure of a Capacitively Coupled Plasma (CCP) etching apparatus includes a vacuum reaction chamber 100, a high frequency rf power supply, and a bias rf power supply.
The vacuum reaction chamber 100 includes a generally cylindrical reaction chamber sidewall 10 made of a metal material, a top cap 9, an upper electrode assembly, and a lower electrode assembly.
The upper electrode assembly includes:
a gas shower head 7 for introducing a reaction gas while being an upper electrode of the reaction chamber;
the mounting substrate 8 is positioned above the gas spray header 7, and the gas spray header 7 is fixedly connected with the top cover 9 of the reaction cavity through the mounting substrate 8;
an upper ground ring 6 disposed around the gas shower head 7, and forming a radio frequency loop between the radio frequency power supply-the lower electrode-the plasma-the upper electrode-the upper ground ring when the radio frequency power supply is applied to the lower electrode.
The lower electrode assembly includes:
a pedestal 1 for carrying an electrostatic chuck (ESC) 2, having a temperature control device therein for controlling the temperature of an upper substrate, and being a conductive material, and simultaneously being a lower electrode, a plasma processing region is formed between the upper electrode and the lower electrode;
an electrostatic chuck 2 for carrying a substrate w, wherein a dc electrode is disposed inside the electrostatic chuck, and dc adsorption is generated between the back surface of the substrate and the carrying surface of the electrostatic chuck 2 by the dc electrode to fix the substrate;
a focus ring 3 disposed around the substrate for adjusting the process effect of the edge region of the substrate;
an isolation ring 4 disposed around the base 1 for achieving isolation of the base 1 from the lower ground ring 11;
a plasma confinement ring 5 positioned between the susceptor and the chamber sidewall 10 for confining the plasma to the reaction zone while allowing the passage of gases;
the grounding ring 11 is located below the plasma confinement ring 5 and is used for providing electric field shielding to avoid plasma leakage.
The gas spray head 7 is arranged opposite to the base 1, and the gas spray head 7 is connected with a gas supply device and is used for conveying reaction gas to the vacuum reaction cavity and simultaneously used as an upper electrode of the vacuum reaction cavity; the base 1 is used for supporting a substrate to be processed and is used as a lower electrode of a vacuum reaction cavity, and a reaction area is formed between the upper electrode and the lower electrode. At least one high-frequency radio-frequency power supply is applied to one of the upper electrode or the lower electrode, and a radio-frequency electric field is generated between the upper electrode and the lower electrode and is used for dissociating the reaction gas into plasma, and the plasma acts on the substrate to be processed to realize etching processing of the substrate.
And a focusing ring 3 and an edge ring are arranged around the base, and the focusing ring and the edge ring are used for adjusting the electric field or the temperature distribution around the substrate, so that the uniformity of substrate processing is improved. The plasma confinement ring 5 is arranged around the edge ring, the exhaust channel is arranged on the plasma confinement ring 5, and the reaction area between the upper electrode and the lower electrode is confined while the reaction gas is exhausted by reasonably arranging the depth-to-width ratio of the exhaust channel, so that the plasma is prevented from leaking to the non-reaction area and the damage to the components in the non-reaction area is avoided.
The high-frequency radio-frequency power supply is applied to the upper electrode or the lower electrode through a high-frequency radio-frequency matching network and is used for controlling the plasma concentration in the reaction cavity. The bias RF power is typically applied to the susceptor to control the direction of the plasma.
Before etching process, introducing O into the vacuum reaction cavity 2 /CF 4 High bias cleaning is carried out by Ar mixed gas, then a silicon wafer is put on the base as an aged wafer, NH is introduced 3 /Ar/CH 4 Mixing the gases, applying a high-frequency radio frequency signal, and exciting NH by the radio frequency signal 3 The generated hydrogen free radicals react with silicon in the silicon wafer to generate hydrogenated silicon, and the hydrogenated silicon is deposited on the surface of the part under the bombardment of Ar ions to form a silicon coating.
The Capacitive Coupling Plasma (CCP) etching equipment adopts the film plating method of the invention to uniformly form a layer of silicon film for the surface of the part possibly contacting with plasma in the etching cavity, thereby isolating the Y of the part 2 O 3 Coating or Al 2 O 3 And the direct contact of the SiC coating protective layer and the plasma reduces the possibility of micro-particle pollution formed by the etching process.
Example 5
An inductively coupled plasma reaction apparatus (ICP) etching apparatus is an apparatus in which energy of a radio frequency power source is introduced into the interior of a reaction chamber in the form of magnetic field coupling through an induction coil, thereby generating plasma and being used for etching. As shown in fig. 5, a schematic structure of an inductively coupled plasma reactor (ICP) is shown, and the lower electrode assemblies of the ICP and CCP are similar in structure.
The inductively coupled plasma reactor comprises a vacuum reaction chamber 100, wherein the vacuum reaction chamber comprises a substantially cylindrical reaction chamber side wall 105 made of a metal material, an insulating window 130 is arranged above the reaction chamber side wall 105, an inductive coupling coil 140 is arranged above the insulating window 130, and the inductive coupling coil 140 is connected with a radio frequency power source 145.
The reaction chamber side wall 105 is provided with a gas injection port 150 at one end near the insulating window 130, and in some apparatuses, a gas injection port is provided in a central region of the insulating window 130, and the gas injection port 150 is connected to the gas supply device 101. The reaction gas in the gas supply device 101 enters the vacuum reaction chamber 100 through the gas injection port 150, and the rf power of the rf power source 145 drives the inductive coupling coil 140 to generate a strong high-frequency alternating magnetic field, so that the reaction gas with low pressure is ionized to generate the plasma 160. A susceptor 110 is disposed at a position downstream of the vacuum reaction chamber 100, and an electrostatic chuck 115 is disposed on the susceptor 110 for supporting and fixing the substrate 120. The plasma 160 contains a large number of active particles such as electrons, ions, atoms in an excited state, molecules, free radicals and the like, and the active particles can react with the surface of the substrate to be processed in various physical and chemical ways, so that the shape of the surface of the substrate is changed, and the etching process is completed. An exhaust pump 125 is also provided below the vacuum reaction chamber 100 for exhausting the reaction byproducts from the vacuum reaction chamber.
Before etching process, introducing O into the vacuum reaction cavity 2 /CF 4 High bias cleaning is carried out by Ar mixed gas, then a silicon wafer is put on the base as an aged wafer, NH is introduced 3 Ar gas, applying a radio frequency signal, under the excitation of radio frequency signal, NH 3 The generated hydrogen free radicals react with silicon in the silicon wafer to generate hydrogenated silicon, and the hydrogenated silicon is deposited on the surface of the part under the bombardment of Ar ions to form a silicon coating.
The inductively coupled plasma reaction device adopts the film plating method of the invention to uniformly form a layer of silicon film on the surface of the part possibly contacting with plasma in the etching cavity, thereby isolating the Y of the part 2 O 3 Coating or Al 2 O 3 Direct contact of the SiC coating protective layer with the plasma reducesThe etching process creates the possibility of particulate contamination.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (18)
1. A method of treating a component to prevent the generation of contaminants, the method comprising the steps of:
placing the parts in a vacuum reaction cavity;
placing a silicon wafer in the vacuum reaction cavity;
generating a silicon coating: introducing a processing gas into the vacuum reaction cavity, wherein the processing gas comprises NH 3 And Ar; applying a radio frequency signal to the vacuum reaction cavity, wherein the radio frequency signal excites the processing gas into plasma, and the plasma reacts with silicon in the silicon wafer to generate silicon coating deposited on the surface of the part;
the process conditions of the plasma treatment are as follows: the pressure range is 20 Mt-100 Mt; the radio frequency range is 25-60 mhz; the flow rate of the mixed gas is as follows: NH (NH) 3 The flow rate of Ar is 200-1000 sccm, and the flow rate of Ar is 100-1000 sccm.
2. The method for treating a component part to prevent the generation of contaminants according to claim 1, wherein a protective layer for preventing plasma etching is provided on the surface of said component part.
3. The method for treating a component with prevention of occurrence of contaminants as recited in claim 2, wherein said protective layer is Y 2 O 3 Coating or Al 2 O 3 A SiC coating.
4. The method of claim 1, wherein the component is a component in contact with the plasma in the vacuum chamber, and comprises at least one of a gas shower head, a reaction chamber inner wall, a ground ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, and a substrate holding frame.
5. The method for treating a feature for preventing contamination according to claim 1, wherein the feature is a feature after performing the organic layer etching process several times.
6. The method of claim 1, wherein the parts placed in the vacuum reaction chamber are subjected to a pre-cleaning process prior to placing the silicon wafer in the vacuum reaction chamber, the pre-cleaning process comprising a high bias cleaning process.
7. The method of claim 6, wherein the process gas used in the high-bias cleaning process is O 2 /CF 4 /Ar。
8. The method for treating a component with contamination prevention according to claim 1, wherein after the silicon plating film is formed, a high bias cleaning step is further performed as needed for removing the silicon plating film on the surface of the component, thereby realizing effective control of the thickness of the silicon plating film.
9. The method of claim 8, wherein the high bias cleaning step and the silicon plating step are performed periodically.
10. The method for treating a component with contamination prevention as recited in claim 1, wherein in the step of forming a silicon plating film, NH is excited by the RF signal 3 The generated hydrogen radicals react with silicon in the silicon wafer to generate hydrogenAnd silicon hydride is deposited on the surface of the part under the bombardment of Ar ions to form the silicon coating.
11. The method for treating a component with respect to claim 1, wherein said process gas further comprises CH 4 。
12. The method for treating a component part for preventing generation of contaminants according to claim 11,
CH 4 the flow rate of (C) is in the range of 0-100 sccm.
13. The method of claim 1, wherein the radio frequency is in a continuous mode or a pulsed mode.
14. The method for treating a component part preventing generation of contaminants according to claim 1, wherein said silicon coating film has a thickness of 10nm to 50nm.
15. A component for a plasma processing environment, comprising a component body, characterized in that: the surface of the body is provided with a protective layer for preventing plasma corrosion, and the protective layer is Y 2 O 3 Coating or Al 2 O 3 SiC coating
A silicon coating film coated on the outer surface of the protective layer; the silicon plating film is formed by the treatment method according to any one of claims 1 to 14.
16. The component for a plasma processing environment of claim 15, wherein the component is a component in contact with the plasma in the vacuum chamber and comprises at least one of a gas showerhead, a chamber inner wall, a ground ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, and a substrate holding frame.
17. A gas showerhead for a plasma processing apparatus, the gas showerhead comprising:
a gas shower head body;
a protective layer coated on the surface of the body for preventing plasma corrosion, wherein the protective layer is Y 2 O 3 Coating or Al 2 O 3 A SiC coating; a kind of electronic device with high-pressure air-conditioning system
A silicon coating film coated on the outer surface of the protective layer; the silicon plating film is formed by the treatment method according to any one of claims 1 to 14.
18. A plasma processing apparatus, comprising: a plasma processing chamber, and a component in contact with a plasma within the plasma processing chamber, the component having the features of claim 15.
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