CN113097041A - Part processing method for preventing pollutant generation and plasma processing device - Google Patents

Part processing method for preventing pollutant generation and plasma processing device Download PDF

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Publication number
CN113097041A
CN113097041A CN201911339687.0A CN201911339687A CN113097041A CN 113097041 A CN113097041 A CN 113097041A CN 201911339687 A CN201911339687 A CN 201911339687A CN 113097041 A CN113097041 A CN 113097041A
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plasma
silicon
gas
component
coating film
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CN113097041B (en
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王晓雯
张卓民
王兆祥
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Advanced Micro Fabrication Equipment Inc Shanghai
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Advanced Micro Fabrication Equipment Inc Shanghai
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/32091—Radio frequency generated discharge the radio frequency energy being capacitively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H01J37/32495—Means for protecting the vessel against plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

The invention discloses a part processing method for preventing pollutant generation and a plasma processing device, wherein the processing method comprises the following steps: placing the parts in a vacuum reaction chamber; placing a silicon wafer in the vacuum reaction chamber; generating a silicon coating film: introducing a treatment gas into the vacuum reaction chamber, wherein the treatment gas contains NH3And Ar; and applying a radio frequency signal to the vacuum reaction cavity, exciting the processing gas into plasma by the radio frequency signal, and reacting the plasma with silicon in a silicon wafer to generate a silicon coating film to be deposited on the surface of the part. The invention adopts the processing gas and the film coating process with very low cost, realizes the uniform film coating of the parts which are possibly contacted with the process gas plasma in the ion etching cavities such as the gas spray header and the like, and isolates the Y of the parts2O3Coating or Al2O3The protective layer of the SiC coating is in direct contact with the plasma, so that the pollution of microparticles is reduced to the greatest extent, the production efficiency is improved, and the production cost is reduced.

Description

Part processing method for preventing pollutant generation and plasma processing device
Technical Field
The invention relates to a plasma etching process, in particular to a part processing method for preventing pollutants from being generated and a plasma processing device.
Background
Contamination of the micro-particles in the etch chamber is an important issue in chip production. Severe chamber contamination can cause shorting and block etching (block etch) of the integrated circuits. Therefore, as the feature size continues to shrink, the control of the number and size of the micro Particles (PA) in the etching chamber becomes more and more strict. For example, in the 0.13-0.11 μm era, the etching cavity detects microparticles with the size of more than 0.16 μm, so that the safety of the etched chip can be ensured. But when the 10nm technology node is reached, the number of microparticles >0.045 μm must be monitored.
For the source of microparticles, there are two main sources: one aspect is the carbon-containing by-products generated during the etching process. For etching of organic mask layer material, the main gas is NH3,N2/H2And the like. During etching, part of the carbon-nitrogen polymer is deposited on the chamber wall, including the upper electrode and the peripheral region of the wafer. On the other hand, the chamber material, especially the top electrode gas Shower Head (SH), is modified due to the high activity of radicals and high energy ions in the plasma. This modification will result in the upper electrode Y2O3Corrosion of the material, thereby forming a source of PA. Meanwhile, the modification also causes the reduction of the service life of the gas spray header, and raises the cost of the COC (consumable cost).
Disclosure of Invention
The invention aims to solve the technical problem that the size and the quantity of microparticles in an etching cavity need to be strictly controlled along with the continuous improvement of the size of a chip, and reduces process gas plasma and Y by designing a special coating process2O3And the like, so as to prevent the direct contact of the electrode materials polluted by the parts, thereby controlling the pollution degree of the micro-particles and prolonging the service life of the parts.
In order to achieve the above object, the present invention provides a method for treating a component to prevent generation of contaminants, comprising the steps of:
placing the parts in a vacuum reaction chamber;
placing a silicon wafer in the vacuum reaction chamber;
generating a silicon coating film:
introducing a treatment gas into the vacuum reaction chamber, wherein the treatment gas contains NH3And Ar;
and applying a radio frequency signal to the vacuum reaction cavity, exciting the processing gas into plasma by the radio frequency signal, and reacting the plasma with silicon in a silicon wafer to generate a silicon coating to be deposited on the surface of the part.
Preferably, the surface of the part is provided with a protective layer for preventing plasma corrosion.
Preferably, the protective layer is Y2O3Coating or Al2O3a/SiC coating.
Preferably, the component is a component in contact with plasma in the vacuum reaction chamber, and includes at least one of a gas shower head, an inner wall of the reaction chamber, a grounding ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focusing ring, an insulating ring, and a substrate holding frame.
Preferably, the component is a component subjected to a plurality of organic layer etching processes.
Preferably, before the step of placing the silicon wafer in the vacuum reaction chamber, a pre-cleaning process is performed on the parts placed in the vacuum reaction chamber, wherein the cleaning pre-process includes a high-bias cleaning process.
Preferably, the process gas for the high bias cleaning process is O2/CF4/Ar。
Preferably, after the silicon coating film is generated, a high-bias cleaning step is carried out according to the requirement, and the high-bias cleaning step is used for removing the silicon coating film on the surface of the part and realizing the effective control of the thickness of the silicon coating film.
Preferably, the high-bias cleaning step and the silicon coating film formation step are performed periodically.
Preferably, the process gas NH is excited by the rf signal3Generated hydrogen radicals and silicon wafersThe silicon in the silicon coating is reacted to generate silicon hydride, and the silicon hydride is deposited on the surface of the part under the bombardment of Ar ions to form the silicon coating.
Preferably, the process gas further comprises CH4。
Preferably, the process conditions of the plasma treatment are as follows: the pressure range is 20 Mt-100 Mt (ton, metric ton, abbreviated as mT, 1mT is 100 MPa); the radio frequency range is 25-60 mhz; the flow rate of the mixed gas is as follows: NH (NH)3The flow range of (A) is 100sccm to 1000sccm, the flow range of Ar is 200 sccm to 1000sccm, and CH4The flow rate of (2) is in the range of 0 to 100 sccm.
Preferably, the radio frequency is in a continuous mode or a pulse mode.
Preferably, the thickness of the silicon coating film is 10nm-50 nm.
The invention also provides a part for a plasma processing environment, which comprises a part body, wherein the surface of the part body is provided with a protective layer for preventing plasma corrosion, and the protective layer is Y2O3Coating or Al2O3A coating of SiC, and
a silicon coating film coated on the outer surface of the protective layer; the silicon coating is formed by the processing method.
The present invention also provides a gas shower head for plasma etching, the gas shower head comprising:
a gas shower head body;
a protective layer coated on the surface of the body for preventing plasma corrosion, wherein the protective layer is Y2O3Coating or Al2O3a/SiC coating; and
and the silicon coating is coated on the outer surface of the protective layer and is formed by adopting the treatment method.
The present invention also provides a plasma processing apparatus, comprising: the plasma processing device comprises a plasma processing cavity and a part which is positioned in the plasma processing cavity and is in contact with plasma, wherein the part has the characteristics.
Through the special coating process, the invention has the advantages that,reduced plasma and Y content2O3Direct contact of parts such as spray header of the coating, thereby controlling the degree of micro-particle pollution and prolonging the Y-containing part2O3Life time of the shower head of the coating.
The invention uses the processing gas with very low cost and the coating process, realizes the uniform coating of the parts which are possibly contacted with the process gas plasma in the ion etching cavities such as the gas spray header and the like, and isolates the Y of the parts2O3Coating or Al2O3The protective layer of the SiC coating is in direct contact with the plasma, so that the pollution caused by microparticles is reduced to the greatest extent, the production efficiency is improved, and the production cost is reduced.
Drawings
Fig. 1 is a flowchart of a new processing method of an etching chamber according to embodiment 1.
FIG. 2 shows Y content under different aging conditions in example 2 and comparative examples 1 to 32O3Is plotted as a function of showerhead face depth.
FIG. 3 shows Y content under different aging conditions in example 2 and comparative examples 1 to 32O3Is a graph of the Si content of the showerhead surface as a function of the depth of the showerhead surface layer.
FIG. 4 is a schematic structural view of a Capacitively Coupled Plasma (CCP) etching apparatus after being processed by the method for treating parts to prevent generation of contaminants according to the present invention.
Fig. 5 is a schematic structural view of an inductively coupled plasma reactor (ICP) etching apparatus after being processed by the method for treating a part to prevent generation of contaminants according to the present invention.
Detailed Description
The scheme of the invention is further explained by combining the drawings and the embodiment.
The technical idea of the invention is to design a new vacuum reaction chamber aging (chamber aging) process2O3Gas blasting of protective layers such as coatingsThe shower head uniformly forms a coating layer containing Si to protect the gas shower head, so that the pollution of microparticles is reduced to the maximum extent, the production efficiency is improved, and the production cost is reduced.
In the same manner, the method can be applied to the treatment of parts requiring prevention of generation of contaminants. The surface of the part is provided with a protective layer for preventing plasma corrosion, and the protective layer can be Y2O3Coating or Al2O3a/SiC coating. The parts are parts which are contacted with plasma in the vacuum reaction cavity and comprise at least one of a gas spray header, the inner wall of the reaction cavity, a grounding ring, a moving ring, an electrostatic chuck assembly, a covering ring, a focusing ring, an insulating ring and a substrate holding frame.
The invention provides a method for treating parts and components for preventing pollutants from being generated, which comprises the following steps:
placing the part to be processed in a vacuum reaction chamber;
placing a silicon wafer in the vacuum reaction chamber;
generating a silicon coating film:
introducing a treatment gas into the vacuum reaction chamber, wherein the treatment gas contains NH3、Ar、CH4；
And applying a radio frequency signal to the vacuum reaction cavity, exciting the processing gas into plasma by the radio frequency signal, and reacting the plasma with silicon in a silicon wafer to generate a silicon coating to be deposited on the surface of the part.
Si wafer (wafer) is used as a seasoning wafer (seasoning wafer) and NH is used as3/Ar/CH4The gas is used as reaction gas for processing, and aging of a vacuum reaction chamber (chamber) is carried out; pressure: 20Mt to 100Mt, RF (radio frequency) frequency: 25-60 mhz; gas flow rate NH3The flow rate is 100 sccm-1000 sccm, the Ar flow rate is 200-1000 sccm, and CH4The flow rate is 0 to 100 sccm.
Under the excitation of the radio frequency signal, NH3The generated hydrogen radicals (H) react with silicon in the silicon wafer to generate silicon hydride, and the silicon hydride is deposited on the surface of the part under the bombardment of Ar ionsForming the silicon coating film. The specific reaction mechanism is as follows:
NH3+e→NH+H*
Ar+e→Ar++2e
xH*+Si→SiHx。
SiHx is redeposited on the surface of parts such as a gas shower head and the like to become a Si deposition layer, and the physical bombardment effect of Ar + accelerates the deposition speed of the Si deposition layer and passivation (passivation).
The radio frequency may be in a continuous mode or a pulsed mode.
After the silicon coating film is generated, a high-bias cleaning step can be carried out according to the requirement, so that the silicon coating film on the surface of the part can be removed, and the effective control of the thickness of the silicon coating film can be realized. The high-bias cleaning step and the silicon coating film forming step may be periodically alternated to control the thickness of the silicon coating film to 10nm to 50 nm.
Example 1
A new processing method of the etching chamber is shown in FIG. 1, and comprises the following steps:
s1, installing a new Y2O3In a plasma gas treatment device of a gas spray head (as an upper electrode) of the coating, O is introduced2/CF4the/Ar mixed gas is used for carrying out high bias cleaning (high bias SH cleaning) on the gas spray head to remove pollution or suspended micro-particles in some installation or part transportation links. It should be noted that in some embodiments, the high bias cleaning step is not required.
S2, after cleaning, a silicon wafer is put into the vacuum reaction chamber. NH is introduced into the vacuum reaction chamber3And Ar as a process gas to age (curing) the surface coating of SH. And applying a radio frequency signal to the vacuum reaction cavity, exciting the processing gas into plasma by the radio frequency signal, and reacting the plasma with silicon in a silicon wafer to generate a silicon coating to be deposited on the surface of the part.
And S3, performing an organic film etching process.
And in the production process, whether the quantity of the microparticles meets the product requirement is monitored on line. Such as the number of microparticlesWhen the abnormality occurs or the preset value is reached, the organic film etching is suspended, and the steps S1 to S2 are repeated, namely the gas spray header is cleaned again to remove Y2O3And (3) carrying out aging treatment on the surface silicon hydride film.
After the aging treatment, Y can be effectively treated2O3The uniform coating on the upper electrode forms a Si-containing silicon coating layer (layer) which protects the upper electrode from Y on the surface of the showerhead2O3The coating is dropped onto the wafer to be processed to control contamination of the cavity with microparticles, particularly Y-containing microparticles.
Example 2
The same procedure as in example 1 was followed, except that the aging gas was changed to NH3/Ar/CH4And gas, and forming a silicon coating film on the surface of the gas spray head.
The thickness of the silicon coating film is controlled by periodically alternating aging treatment and high-bias cleaning.
After the silicon coating is aged by the method of example 2, the organic film is etched and produced, and when 300 silicon wafers are produced, the number of the detected microparticles is 1, which is far less than 5 of the standard. The gas shower heads were tested and the results are shown in fig. 2-3.
As shown in FIG. 2, shows a composition containing Y2O3The content of Y on the surface of the gas spray header changes along with the depth of the surface layer of the gas spray header: from the outer surface of the spray head inwards to the depth of less than 20nm, the atomic percent of Y is less than 5%, and at the depth of between 20nm and 40nm, the atomic percent of Y gradually increases until the depth is more than 60nm, and the atomic percent of Y gradually stabilizes to be about 40%. It can be seen that it contains Y2O3After the surface of the gas shower head is subjected to the silicon coating treatment, Y2O3Are effectively isolated.
As shown in FIG. 3, shows a composition containing Y2O3The Si content on the surface of the gas spray head is changed along with the depth of the surface layer of the gas spray head: from the outer surface of the spray head to the inside, the atomic percent of Si is stabilized at 30-35% at the depth below 20nm, and the atomic percent of Si is gradually reduced and straightened at the depth between 20nm and 40nmTo above 60nm, Si is hardly detectable. Therefore, the silicon coating is positioned on the outer surface layer of the gas spray head.
When the number of the micro-particles on the surface of the wafer to be produced is monitored to be increased or is close to a standard value, the production is suspended, and O is introduced into the vacuum reaction cavity2/CF4And the/Ar mixed gas is used for cleaning the gas spray head in a high bias mode to remove residual silicon coating and other microparticle impurities on the surface of the gas spray head, then a silicon wafer is placed into the vacuum reaction cavity to serve as an aging wafer, and aging treatment is carried out again to form the silicon coating.
Comparative example 1
For Y after brand new or wet clean2O3The gas spray header uses plasma to firstly carry out surface cleaning of the gas spray header so as to remove pollution or suspended microparticles in some installation or part transportation links. Then carrying out conventional aging treatment of the reaction cavity, taking the silicon wafer as an aging wafer, and adopting N as aging treatment gas2/H2. Then entering the production process such as plasma etching and the like.
However, during the production process, since Y2O3Is directly exposed to the plasma as shown in fig. 2. The radicals generated by the dissociation of the gases further attack the surface of the showerhead, causing damage to the surface and forming a source of micro-particles. After each periodic maintenance by the method, the number of the microparticles with the particle size of more than 0.045 μm is monitored to be 0, after 5 pieces of PR are produced, 1 microparticle with the particle size of more than 0.045 μm is monitored, when 30 pieces are produced, the microparticles with the particle size of more than 0.045 μm are greatly expanded to 11 particles, and when 100 pieces are produced, the microparticles with the particle size of more than 0.045 μm are even expanded to 73 particles. However, according to production standards, the number of microparticles per wafer must not exceed 5.
After aging treatment by the method of comparative example 1, organic film etching production was performed, and when 300 sheets were produced, the gas shower head was examined, and the results are shown in fig. 2 to 3.
As shown in FIG. 2, shows a composition containing Y2O3The content of Y on the surface of the gas spray header changes with the depth of the surface layer of the gas spray header: the atomic percentage of Y detected on the outermost layer is 30%, from the outer surface of the spray head inwards to the depth of 20nm, the atomic percentage of Y is gradually increased to over 40%, and the atomic percentage of Y is kept unchanged when the depth is above 20 nm. It can be seen that it contains Y2O3After the surface of the gas shower head is aged, Y is2O3Are hardly isolated.
As shown in FIG. 3, shows a composition containing Y2O3The Si content on the surface of the gas spray head is changed along with the depth of the surface layer of the gas spray head: from the showerhead outer surface inward, the atomic percent outermost layer of Si is slightly above 0 (trace detected), and drops to 0 already below 20nm depth. It can be seen that it contains Y2O3Almost no silicon coating film was formed on the surface of the gas shower head.
Comparative example 2
In the same manner as in example 1, the aging gas was NH3/Ar/CH4Gas, at this point the process was exactly the same as in example 2. Except that O is used immediately after aging2/CF4And carrying out high-bias cleaning by the/Ar mixed gas. Then, organic film etching production was performed, and when 300 sheets were produced, the gas shower head was inspected, and the results are shown in fig. 2 to 3.
As shown in FIG. 2, shows a composition containing Y2O3The content of Y on the surface of the gas spray header changes along with the depth of the surface layer of the gas spray header: the atomic percentage of Y detected on the outermost layer is 30%, from the outer surface of the spray head inwards to the depth of 20nm, the atomic percentage of Y is gradually increased to over 40%, and the atomic percentage of Y is kept unchanged when the depth is above 20 nm. It can be seen that it contains Y2O3The silicon coating film formed on the surface of the gas shower head after the aging treatment is treated by O2/CF4the/Ar mixed gas was completely removed after high-bias cleaning.
As shown in FIG. 3, shows a composition containing Y2O3The Si content on the surface of the gas spray head is changed along with the depth of the surface layer of the gas spray head: inward from the showerhead outer surface, Si is barely detectable. It can be seen that O2/CF4The high bias cleaning of the/Ar mixed gas canCompletely removing Si in the silicon coating film.
According to the experiment, after the silicon coating film is generated, a high-bias cleaning step can be carried out as required to remove the silicon coating film on the surface of the part and realize effective control on the thickness of the silicon coating film.
Comparative example 3
Ageing was carried out by the method of comparative example 1, followed immediately by O2/CF4And carrying out high-bias cleaning by the/Ar mixed gas. Then, organic film etching production was performed, and when 300 sheets were produced, the gas shower head was inspected, and the results are shown in fig. 2 to 3.
As shown in FIG. 2, shows a composition containing Y2O3The content of Y on the surface of the gas spray header changes along with the depth of the surface layer of the gas spray header: the atomic percentage of Y detected on the outermost layer is less than 30%, the atomic percentage of Y gradually increases to over 40% from the outer surface of the spray head inwards to the depth of 20nm, and the atomic percentage of Y is kept unchanged when the depth is above 20 nm. It can be seen that it contains Y2O3After the surface of the gas shower head is aged, Y is2O3Are hardly isolated.
As shown in FIG. 3, shows a composition containing Y2O3The Si content on the surface of the gas spray head is changed along with the depth of the surface layer of the gas spray head: from the showerhead outer surface inward, the atomic percent outermost layer of Si is slightly above 0, lower than that detected for comparative example 1, and has dropped to 0 by less than 20nm depth. It can be seen that Y is contained after the treatment of the method of comparative example 32O3Almost no silicon coating film was formed on the surface of the gas shower head.
It can be seen that only NH is present3An effective Si passivation layer can only be formed by aging treatment under plasma. With other gases, e.g. N2/H2There is no similar effect.
Example 4
A Capacitively Coupled Plasma (CCP) etching apparatus is an apparatus for generating plasma in a reaction chamber by a radio frequency power applied to a plate through capacitive coupling and etching. Fig. 4 is a schematic structural diagram of a Capacitively Coupled Plasma (CCP) etching apparatus, which includes a vacuum chamber 100, a high-frequency rf power supply, and a bias rf power supply.
The vacuum reaction chamber 100 includes a substantially cylindrical reaction chamber sidewall 10 made of a metallic material, a top lid 9, an upper electrode assembly, and a lower electrode assembly.
The upper electrode assembly comprises:
the gas spray header 7 is used for introducing reaction gas and simultaneously used as an upper electrode of the reaction cavity;
the mounting substrate 8 is positioned above the gas spray header 7, and the gas spray header 7 is fixedly connected with a top cover 9 of the reaction cavity through the mounting substrate 8;
and an upper ground ring 6 disposed around the gas shower head 7, forming a radio frequency loop between the radio frequency power source-lower electrode-plasma-upper electrode-upper ground ring when the radio frequency power source is applied to the lower electrode.
The lower electrode assembly includes:
the substrate 1 is used for bearing an electrostatic chuck (ESC)2, a temperature control device is arranged in the substrate to realize the temperature control of an upper substrate, the substrate is made of a conductive material and is simultaneously used as a lower electrode, and a plasma processing area is formed between the upper electrode and the lower electrode;
the electrostatic chuck 2 is used for bearing a substrate w, a direct current electrode is arranged in the electrostatic chuck, and direct current adsorption is generated between the back surface of the substrate and the bearing surface of the electrostatic chuck 2 through the direct current electrode so as to fix the substrate;
the focusing ring 3 is arranged around the substrate and used for adjusting the process treatment effect of the edge area of the substrate;
an isolation ring 4 disposed around the base 1 for isolating the base 1 from the lower ground ring 11;
a plasma confinement ring 5 located between the susceptor and the reaction chamber sidewall 10 for confining plasma in the reaction region while allowing gas to pass;
and the grounding ring 11 is positioned below the plasma confinement ring 5 and is used for providing electric field shielding and preventing plasma from leaking.
The gas spray header 7 is arranged opposite to the base 2, and the gas spray header 7 is connected with a gas supply device and used for conveying reaction gas to the vacuum reaction cavity and serving as an upper electrode of the vacuum reaction cavity; the base 2 is used for supporting a substrate to be processed and is simultaneously used as a lower electrode of a vacuum reaction cavity, and a reaction area is formed between the upper electrode and the lower electrode. At least one high-frequency radio frequency power supply is applied to one of the upper electrode or the lower electrode, a radio frequency electric field is generated between the upper electrode and the lower electrode, and is used for dissociating reaction gas into plasma which acts on the substrate to be processed, so that the etching processing of the substrate is realized.
And a focusing ring 3 and an edge ring are arranged around the base, and the focusing ring and the edge ring are used for adjusting the electric field or temperature distribution around the substrate and improving the uniformity of substrate processing. Encircle the edge ring sets up plasma confinement ring 5, is equipped with exhaust passage on the plasma confinement ring 5, through the dark wide proportion that rationally sets up exhaust passage, when the realization is discharged reaction gas, with the reaction zone of plasma restraint between upper and lower electrode, avoid plasma to reveal the non-reaction zone, cause the part damage of non-reaction zone.
The high-frequency radio frequency power supply is applied to the upper electrode or the lower electrode through a high-frequency radio frequency matching network and is used for controlling the plasma concentration in the reaction cavity. The bias RF power is generally applied to the susceptor for controlling the direction of the plasma.
Before the etching process is carried out, O is firstly introduced into the vacuum reaction cavity2/CF4Performing high-bias cleaning with/Ar mixed gas, placing a silicon wafer on the pedestal as an aged wafer, and introducing NH3/Ar/CH4Mixing the gas, applying a high-frequency radio-frequency signal, and NH under the excitation of the radio-frequency signal3And the generated hydrogen free radicals react with silicon in the silicon wafer to generate silicon hydride, and the silicon hydride is deposited on the surface of the part under the bombardment of Ar ions to form a silicon coating.
The etching equipment of the Capacitive Coupling Plasma (CCP) adopts the film coating method of the invention to uniformly form a layer of silicon on the surface of the part which is possibly contacted with the plasma in the etching cavityCoating film for isolating Y of the component2O3Coating or Al2O3The direct contact of the protective layer of the SiC coating and the plasma reduces the possibility of micro-particle pollution formed by an etching process.
Example 5
An Inductively Coupled Plasma (ICP) etching apparatus is an apparatus for generating plasma by allowing energy of a radio frequency power supply to enter the inside of a reaction chamber through an induction coil in a form of magnetic field coupling, and for etching. As shown in fig. 5, which is a schematic view of the structure of an inductively coupled plasma reactor (ICP), the lower electrode assemblies of ICP and CCP are similar in structure.
The inductively coupled plasma reactor includes a vacuum reaction chamber 100, the vacuum reaction chamber includes a substantially cylindrical reaction chamber sidewall 105 made of a metal material, an insulating window 130 is disposed above the reaction chamber sidewall 105, an inductive coupling coil 140 is disposed above the insulating window 130, and the inductive coupling coil 140 is connected to a radio frequency power source 145.
The sidewall 105 of the reaction chamber is provided with a gas inlet 150 at one end adjacent to the insulating window 130, and in some apparatuses, a gas inlet is also provided at a central region of the insulating window 130, and the gas inlet 150 is connected to the gas supply device 101. The reaction gas in the gas supply device 101 enters the vacuum reaction chamber 100 through the gas injection port 150, and the rf power of the rf power source 145 drives the inductive coupling coil 140 to generate a strong high-frequency alternating magnetic field, so that the low-pressure reaction gas is ionized to generate the plasma 160. A susceptor 110 is disposed at a downstream position of the vacuum reaction chamber 100, and an electrostatic chuck 115 is disposed on the susceptor 110 for supporting and fixing a substrate 120. The plasma 160 contains a large number of active particles such as electrons, ions, excited atoms, molecules, and radicals, which can react with the surface of the substrate to be processed in various physical and chemical ways, so that the topography of the substrate surface is changed, i.e., the etching process is completed. An exhaust pump 125 is further disposed below the vacuum reaction chamber 100 for exhausting the reaction by-products out of the vacuum reaction chamber.
Before the etching process is carried out, O is firstly introduced into the vacuum reaction cavity2/CF4Performing high-bias cleaning with/Ar mixed gas, placing a silicon wafer on the pedestal as an aged wafer, and introducing NH3Ar gas, applying a radio frequency signal, and NH under the excitation of the radio frequency signal3And the generated hydrogen free radicals react with silicon in the silicon wafer to generate silicon hydride, and the silicon hydride is deposited on the surface of the part under the bombardment of Ar ions to form a silicon coating.
The inductively coupled plasma reaction device adopts the coating method of the invention to uniformly form a layer of silicon coating on the surface of the part which is possibly contacted with the plasma in the etching cavity, thereby isolating the Y of the part2O3Coating or Al2O3The direct contact of the protective layer of the SiC coating and the plasma reduces the possibility of micro-particle pollution formed by an etching process.
While the present invention has been described in detail with reference to the preferred embodiments, it should be understood that the above description should not be taken as limiting the invention. Various modifications and alterations to this invention will become apparent to those skilled in the art upon reading the foregoing description. Accordingly, the scope of the invention should be determined from the following claims.

Claims (18)

1. A method for treating a component to prevent the generation of contaminants, the method comprising the steps of:
placing the parts in a vacuum reaction chamber;
placing a silicon wafer in the vacuum reaction chamber;
generating a silicon coating film: introducing a treatment gas into the vacuum reaction chamber, wherein the treatment gas contains NH3And Ar; and applying a radio frequency signal to the vacuum reaction cavity, exciting the processing gas into plasma by the radio frequency signal, and reacting the plasma with silicon in a silicon wafer to generate a silicon coating to be deposited on the surface of the part.
2. The method as set forth in claim 1, wherein a surface of said component is provided with a protective layer for preventing plasma corrosion.
3. The method as claimed in claim 2, wherein the protective layer is Y2O3Coating or Al2O3a/SiC coating.
4. The method as claimed in claim 1, wherein the component is a component in contact with plasma in the vacuum chamber, and comprises at least one of a gas shower head, an inner wall of the chamber, a grounding ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focus ring, an insulating ring, and a substrate holding frame.
5. The method as claimed in claim 1, wherein the component is subjected to a plurality of organic layer etching processes.
6. The method as set forth in claim 1, wherein the parts placed in the vacuum reaction chamber are subjected to a pre-cleaning process before the silicon wafer is placed in the vacuum reaction chamber, the pre-cleaning process comprising a high bias cleaning process.
7. The method as claimed in claim 6, wherein the process gas for the high bias cleaning process is O2/CF4/Ar。
8. The method as claimed in claim 1, wherein after the silicon coating film is formed, a high-bias cleaning step is performed as required to remove the silicon coating film on the surface of the component part, thereby effectively controlling the thickness of the silicon coating film.
9. The method as claimed in claim 8, wherein the high-bias cleaning step and the step of forming the silicon coating film are performed periodically.
10. The method as claimed in claim 1, wherein the step of forming the silicon coating is performed by exciting NH with RF signals3The generated hydrogen free radicals react with silicon in a silicon wafer to generate silicon hydride, and the silicon hydride is deposited on the surface of the part under the bombardment of Ar ions to form the silicon coating.
11. The method according to claim 1, wherein the process gas further comprises CH4。
12. The method as claimed in claim 11, wherein the plasma treatment is performed under the following conditions: the pressure range is 20 Mt-100 Mt; the radio frequency range is 25-60 mhz; the flow rate of the mixed gas is as follows: NH (NH)3The flow range of (A) is 100sccm to 1000sccm, the flow range of Ar is 200 sccm to 1000sccm, and CH4The flow rate of (2) is in the range of 0 to 100 sccm.
13. The method as claimed in claim 1, wherein the radio frequency is applied in a continuous mode or a pulse mode.
14. The method as claimed in claim 1, wherein the thickness of the silicon coating film is 10nm to 50 nm.
15. A component for a plasma processing environment, comprising a component body, wherein: the surface of the body is provided with a protective layer for preventing plasma corrosion, and the protective layer is Y2O3Coating or Al2O3A coating of SiC, and
a silicon coating film coated on the outer surface of the protective layer; the silicon coating film is formed by the treatment method according to any one of claims 1 to 14.
16. The component for a plasma processing environment of claim 15, wherein said component is a component in contact with a plasma in said vacuum chamber, comprising at least one of a gas showerhead, an inner wall of the chamber, a ground ring, a moving ring, an electrostatic chuck assembly, a cover ring, a focus ring, an insulator ring, and a substrate holding frame.
17. A gas showerhead for a plasma processing apparatus, the gas showerhead comprising:
a gas shower head body;
a protective layer coated on the surface of the body for preventing plasma corrosion, wherein the protective layer is Y2O3Coating or Al2O3a/SiC coating; and
a silicon coating film coated on the outer surface of the protective layer; the silicon coating film is formed by the treatment method according to any one of claims 1 to 14.
18. A plasma processing apparatus, comprising: a plasma processing chamber, and a component located within said plasma processing chamber in contact with a plasma, said component having the features of claim 15.
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