CN108227413B - Photoresist removing device and cleaning method thereof - Google Patents
Photoresist removing device and cleaning method thereof Download PDFInfo
- Publication number
- CN108227413B CN108227413B CN201611162303.9A CN201611162303A CN108227413B CN 108227413 B CN108227413 B CN 108227413B CN 201611162303 A CN201611162303 A CN 201611162303A CN 108227413 B CN108227413 B CN 108227413B
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- Prior art keywords
- photoresist
- backing plate
- photoresist removing
- plasma
- power supply
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 96
- 238000004140 cleaning Methods 0.000 title claims abstract description 44
- 238000000034 method Methods 0.000 title claims description 18
- 239000007921 spray Substances 0.000 claims abstract description 7
- 239000007789 gas Substances 0.000 claims description 16
- 238000012546 transfer Methods 0.000 claims description 16
- 230000000712 assembly Effects 0.000 claims description 12
- 238000000429 assembly Methods 0.000 claims description 12
- 230000008569 process Effects 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 2
- 239000007769 metal material Substances 0.000 claims description 2
- 239000000376 reactant Substances 0.000 abstract description 12
- 235000012431 wafers Nutrition 0.000 description 33
- 238000006243 chemical reaction Methods 0.000 description 8
- 230000000694 effects Effects 0.000 description 5
- 239000002245 particle Substances 0.000 description 4
- 230000004888 barrier function Effects 0.000 description 3
- 238000001914 filtration Methods 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 230000003993 interaction Effects 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 239000012495 reaction gas Substances 0.000 description 2
- 230000001133 acceleration Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/427—Stripping or agents therefor using plasma means only
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
- H01L21/0272—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers for lift-off processes
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- General Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
The invention relates to a photoresist removing device, comprising: a photoresist removing chamber; a spray head is arranged at the top of the photoresist removing cavity, and cleaning gas is introduced into the photoresist removing cavity; a backing plate is arranged along the inner side of the side wall of the photoresist removing chamber in a covering manner; an electrode coil is embedded in the backing plate; the electrode coil is applied with a high-voltage radio frequency power supply, and DBD plasma is formed on the surface of the backing plate so as to remove the photoresist from the inside of the cavity, and particularly the surface of the backing plate is subjected to plasma cleaning. The invention adopts DBD plasma to clean the cavity, can completely remove the residual reactants of the photoresist deposited and adhered on the cavity, has little damage and effectively improves the stability of the photoresist removing device.
Description
Technical Field
The invention relates to a photoresist removing device and a cleaning method thereof, in particular to a photoresist removing device capable of effectively cleaning a side wall backing plate and a cleaning method thereof, and belongs to the field of plasma treatment.
Background
In the process of processing the surface of the wafer by adopting the plasma processing equipment, the reaction gas containing proper etchant or deposition source gas is introduced into the vacuum reaction chamber, and then the radio frequency energy is applied to the reaction chamber to dissociate the reaction gas to generate plasma for etching the surface of the wafer placed in the reaction chamber. When defining the etching pattern, a photoresist layer is coated on the wafer, and the surface of the wafer is further covered with the photoresist layer after the plasma treatment process is completed. Therefore, after the plasma etching operation is completed, the wafer needs to be transferred into a photoresist removing apparatus for stripping the photoresist on the wafer surface.
In the existing photoresist removing apparatus, in order to reduce the impact damage of charges in the plasma on the wafer device structure caused by the acceleration motion as much as possible, a plasma generating apparatus is not generally arranged in a photoresist removing chamber, and plasma is directly generated in the chamber to remove the photoresist on the wafer surface, but RPS (Remote Plasma Source ) is adopted to remove the photoresist on the wafer surface. The RPS mode is to set an opening on the upper cavity wall of the cavity of the photoresist removing device, plasma from the RPS is introduced into the plasma through the spray head, and ions are filtered out through a baffle plate arranged below the upper cavity wall, so that only oxygen-enriched neutral free radicals are allowed to diffuse downwards, the photoresist is removed, and semiconductor devices on a wafer are protected.
During a service period of the photoresist remover, photoresist on the surface of the wafer needs to be removed continuously. During this process, some residual reactant from the photoresist may accumulate within the chamber, particularly on the backing plate at the chamber sidewall. As these residual reactants accumulate, conditions of physical and chemical reactions within the chamber of the photoresist stripping apparatus may drift, thereby affecting the rate and uniformity of photoresist stripping.
Therefore, in order to enable the rate and uniformity of photoresist removal to be maintained at all times, in principle, cleaning of the chamber of the photoresist remover apparatus to remove deposited reactants should be required after each service period.
However, since there is no direct plasma source in the chamber of the photoresist remover, the plasma from the RPS at the top of the chamber is also filtered out, and thus the chamber cannot be effectively treated and cleaned by physical bombardment and chemical reaction of the plasma, and there is no other reasonably viable method to effectively clean the reactants attached in the strong chamber. Therefore, the invention provides a photoresist removing device which can effectively remove reactants in a chamber.
Disclosure of Invention
The invention aims to provide a photoresist removing device and a cleaning method thereof, which adopt DBD plasma to clean the cavity, can completely remove residual reactants of photoresist deposited and adhered on the device, has little damage and effectively improves the stability of the photoresist removing device.
In order to achieve the above object, the present invention provides a photoresist removing apparatus, comprising: a photoresist removing chamber; a spray head is arranged at the top of the photoresist removing cavity, and cleaning gas is introduced into the photoresist removing cavity; a backing plate is arranged along the inner side of the side wall of the photoresist removing chamber in a covering manner; an electrode coil is embedded in the backing plate; the electrode coil is applied with a high-voltage radio frequency power supply, DBD plasma is formed on the surface of the backing plate, so that the inside of the cavity is removed from photoresist, and particularly, the surface of the backing plate is subjected to plasma cleaning; and the amplitude of the output voltage of the high-voltage radio frequency power supply is 1 kV-10 kV, and the frequency is 1 kHz-1 MHz.
The cleaning gas adopts oxygen.
The electrode coil is made of metal materials, is arranged along the circumferential direction of the backing plate and is annular.
The side wall of the photoresist removing chamber and the backing plate at the corresponding position are provided with wafer transfer ports for moving in and out wafers.
In a preferred embodiment of the invention, two electrode coils connected through a circuit are embedded in the base plate and are respectively positioned above and below the wafer transfer port, one electrode coil is connected with a high-voltage radio frequency power supply, and the other electrode coil is grounded to form a discharge loop.
In another preferred embodiment of the present invention, two groups of electrode assemblies connected by a circuit are embedded in the backing plate, and are respectively located above and below the wafer transfer port, wherein one group of electrode assemblies is connected with a high-voltage radio frequency power supply, and the other group of electrode assemblies is grounded to form a discharge loop.
Each group of electrode assemblies comprises a plurality of electrode coils connected in parallel, and the electrode coils are embedded in the backing plate in an even distribution manner.
The showerhead is in communication with a remote plasma source above the photoresist stripping chamber.
A filter device is arranged between the spray head and the wafer to be processed so as to filter ions in the cleaning gas.
The invention also provides a cleaning method of the photoresist removing device, which is realized by adopting the photoresist removing device, and is carried out after a wafer finishes a photoresist removing process and moves out of a photoresist removing cavity, and the cleaning of the inside of the whole photoresist removing cavity comprises the following steps: and switching on a high-voltage radio frequency power supply, applying the high-voltage radio frequency power supply to an electrode coil in the backing plate, exciting cleaning gas introduced by a top nozzle in the photoresist removing chamber, and forming DBD plasma on the surface of the backing plate so as to clean the inside of the photoresist removing chamber, in particular to the surface of the backing plate.
In summary, the photoresist removing device and the cleaning method thereof provided by the invention have the following advantages and beneficial effects:
1. the DBD plasma is formed on the surface of the backing plate by applying a high-voltage radio frequency power supply to the electrode buried in the backing plate, so that the inside of the photoresist removing cavity, especially the surface of the backing plate, can achieve a locally enhanced cleaning effect.
2. Since the formed DBD plasma generates a large amount of chemically active particles or radicals, it chemically cleans the inside of the photoresist removing chamber, especially the surface of the pad with little damage.
Drawings
FIG. 1 is a schematic view of a photoresist remover according to the present invention;
fig. 2 is a schematic structural view of a shim plate and a coil according to the present invention.
Detailed Description
The following describes specific embodiments of the present invention with reference to the drawings.
As shown in fig. 1, the photoresist removing apparatus according to the present invention comprises a photoresist removing chamber 1, which is formed of an upper chamber wall at a top end, a lower chamber wall at a bottom end, and a sidewall connected between the upper chamber wall and the lower chamber wall, and forms an internal reaction space for placing a wafer for photoresist removal, and cleaning the inside of the photoresist removing chamber 1 after a service and maintenance period.
A nozzle is arranged on the lower surface of the upper cavity wall at the top of the photoresist removing cavity 1, and is used for introducing cleaning gas for cleaning into the photoresist removing cavity 1 and maintaining a certain flow. The showerhead also communicates with a Remote Plasma Source (RPS) above the photoresist stripping chamber 1, receiving a plasma of cleaning gas from the RPS. A filtering device is arranged between the lower part of the spray head and the wafer to be processed and is used for filtering out ions in the cleaning gas, and only the cleaning gas rich in free radicals is allowed to flow downwards to the wafer. The spray head and the filtering device can be two components or can be integrated into one component. In this embodiment, since the photoresist to be removed is mainly composed of carbon, the residual reactant of the photoresist is also mainly composed of carbon, so that oxygen is used as the cleaning gas, and the residual reactant can be effectively removed.
The liner plate 2 is arranged along the inner side of the side wall of the photoresist removing chamber 1 in a covering way, is annular, is made of a plasma corrosion resistant insulating material (such as quartz) and plays roles of supporting and protecting the side wall.
As shown in fig. 2, an electrode coil 3 made of metal is inserted into the backing plate 2, and is provided in a ring shape along the circumferential direction of the backing plate 2. A high-voltage radio frequency power supply 5 is applied to the electrode coil 3, the backing plate 2 is used as a dielectric barrier layer, coplanar dielectric barrier discharge (DBD, dielectric barrier discharge) is formed near the inner surface of the backing plate 2, and the cleaning gas introduced into the photoresist removing chamber 1 forms DBD plasma 6 (active group) on the surface of the backing plate 2 so as to remove residual photoresist reactants adhered to the surface of the backing plate 2. Since the electrode coil 3 is disposed inside the pad 2 and is coated with the insulating material from which the pad 2 is made, it is ensured that the electrode coil 3 is not directly exposed to the DBD plasma 6.
The amplitude of the output voltage of the high-voltage radio frequency power supply 5 is 1 kV-10 kV, and the frequency is 1 kHz-1 MHz. The reason why the high-voltage radio-frequency power supply 5 is applied to the electrode coil 3 and the frequency of the high-voltage radio-frequency power supply is not more than 1MHz is that the high-frequency radio-frequency power supply can lead to high generated plasma density, a continuous sheath layer exists, the interaction between the plasma and the surface of the backing plate 2 positioned outside the electrode coil 3 comprises physical bombardment of ions and chemical reaction of active particles or groups, and the physical damage to the surface of the backing plate 2 is large. The frequency of the high-voltage radio frequency power supply selected by the invention is of the order of kHz, the generated plasma is discontinuously discharged, the density of the plasma is lower, the sheath effect is weaker, the interaction between the plasma and the surface of the backing plate 2 positioned outside the electrode coil 3 is mainly based on the chemical reaction of active particles, and the physical damage to the surface of the backing plate 2 is very small. In addition, the invention also aims to select a high-voltage power supply with lower frequency: the frequency of the power source applied to the electrode coil 3 is lower, the corresponding wavelength is relatively longer, the symmetry of the generated plasma is less influenced by the radio frequency feed point, so that the problem of poor symmetry of the circumferential distribution of the plasma is avoided, and the cleaning uniformity of the surface of the backing plate 2 positioned outside the electrode coil 3 is ensured.
A wafer transfer port 4 for moving a wafer in and out is arranged on the side wall of the photoresist removing chamber 1 and the backing plate 2 at the corresponding position; after the photoresist is removed from the wafer in the photoresist removing chamber 1, the wafer transfer port 4 is opened, and the wafer can be removed from the wafer transfer port 4 by a robot. Then the wafer transfer port 4 is closed, and the photoresist removing chamber 1 can be cleaned by using the invention. After the cleaning is completed, the wafer transfer port 4 is opened, and the next wafer to be processed is moved into the photoresist removing chamber 1 from the wafer transfer port 4.
In a preferred embodiment of the present invention, as shown in fig. 1, two electrode coils 3 connected by a circuit are embedded in the backing plate 2, and are respectively located above and below the wafer transfer port 4, wherein one electrode coil is connected to the high-voltage rf power supply 5 through the matching capacitor 7, and the other electrode coil is grounded, so as to form a discharge loop, so that the discharge effect of the DBD above and below the wafer transfer port 4 is uniform, and the cleaning efficiency is improved.
In another preferred embodiment of the present invention, two groups of electrode assemblies connected by a circuit are embedded in the backing plate 2, and are respectively located above and below the wafer transfer port 4, wherein one group of electrode assemblies is connected to the high-voltage rf power supply 5 through the matching capacitor 7, and the other group of electrode assemblies is grounded, so as to form a discharge loop. Each group of electrode assemblies comprises a plurality of electrode coils connected in parallel, and the electrode coils are embedded in the backing plate 2 in an evenly distributed manner, so that the DBD discharge effect on the surface of the backing plate 2 is effectively improved, the discharge is even, and the cleaning efficiency is greatly improved.
The method for cleaning process by using the photoresist removing device provided by the invention comprises the following steps: the high-voltage radio frequency power supply 5 is connected, the high-voltage radio frequency power supply 5 is applied to the electrode coil 3 in the backing plate 2, cleaning gas introduced by a top nozzle in the photoresist removing chamber 1 is excited, DBD plasma 6 is formed on the surface of the backing plate 2, the inside of the photoresist removing chamber 1 is cleaned, and particularly, a locally enhanced cleaning effect is achieved on the surface of the backing plate 2.
The DBD plasma 6 is generated under the action of the high-voltage radio frequency power supply 5 with relatively high voltage and relatively low frequency, so that the service life of the DBD plasma is short, continuous discharge cannot be maintained, the space propagation distance is limited, the DBD plasma 6 is formed by concentrating on the surface area of the backing plate 2, and the backing plate 2 with photoresist reactant adhered on the surface is especially cleaned. The DBD plasma 6 is not capable of maintaining a plasma sheath voltage due to its non-continuous nature, but is capable of generating a large number of chemically active particles or radicals, capable of chemically cleaning the surface of the backing plate 2, and has minimal damage. In the range of the voltage amplitude of the high-voltage rf power supply 5, the cleaning process of the DBD plasma 6 generated on the backing plate 2 and the chamber interior is relatively faster when the voltage is larger.
In summary, according to the photoresist removing device and the cleaning method thereof provided by the invention, the DBD plasma is formed on the surface of the backing plate by applying the high-voltage radio frequency power supply to the electrode coil embedded in the backing plate, so that the purpose of cleaning the photoresist removing chamber is achieved, residual reactants of the photoresist are effectively removed, and the damage to the surface of the backing plate is very small.
While the present invention has been described in detail through the foregoing description of the preferred embodiment, it should be understood that the foregoing description is not to be considered as limiting the invention. Many modifications and substitutions of the present invention will become apparent to those of ordinary skill in the art upon reading the foregoing. Accordingly, the scope of the invention should be limited only by the attached claims.
Claims (9)
1. A photoresist remover comprising:
a photoresist removing chamber;
the spray head is arranged at the top of the photoresist removing cavity, and cleaning gas is introduced into the photoresist removing cavity;
the backing plate is annular and is arranged along the inner side of the side wall of the photoresist removing chamber in a covering way;
the electrode coil is embedded in the base plate; the electrode coil is made of metal materials, is arranged along the circumferential direction of the backing plate and is annular;
the electrode coil is applied with a high-voltage radio frequency power supply, DBD plasma is formed on the surface of the backing plate, and plasma cleaning is carried out on the surface of the backing plate; and the amplitude of the output voltage of the high-voltage radio frequency power supply is 1 kV-10 kV, and the frequency is 1 kHz-1 MHz.
2. The photoresist remover of claim 1, wherein the cleaning gas is oxygen.
3. The photoresist remover of claim 1, wherein the sidewall of the photoresist removing chamber and the corresponding backing plate are provided with wafer transfer ports for wafer transfer in and out.
4. The photoresist remover of claim 3, wherein two electrode coils connected by circuit are embedded in the backing plate, and are respectively positioned above and below the wafer transfer port, one electrode coil is connected with a high-voltage radio-frequency power supply, and the other electrode coil is grounded to form a discharge loop.
5. The photoresist remover of claim 3, wherein two groups of electrode assemblies connected by circuit are embedded in the backing plate and are respectively positioned above and below the wafer transfer port, one group of electrode assemblies is connected with a high-voltage radio-frequency power supply, and the other group of electrode assemblies is grounded to form a discharge loop.
6. The photoresist remover of claim 5, wherein each set of electrode assemblies comprises a plurality of parallel-connected electrode coils, and wherein the uniformly distributed embedments are disposed within the backing plate.
7. The photoresist stripper of claim 1 wherein the showerhead is in communication with a remote plasma source above the photoresist stripping chamber.
8. The photoresist stripper of claim 7, wherein a filter is further disposed between the showerhead and the wafer to be processed to filter ions in the cleaning gas.
9. A cleaning method of a photoresist remover according to any one of claims 1 to 8, wherein the cleaning of the entire photoresist remover after the wafer has completed the photoresist removing process and moved out of the photoresist remover chamber is performed, comprising:
and switching on a high-voltage radio frequency power supply, applying the high-voltage radio frequency power supply to an electrode coil in the backing plate, exciting cleaning gas introduced by a top nozzle in the photoresist removing chamber, and forming DBD plasma on the surface of the backing plate so as to clean the surface of the backing plate by plasma.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611162303.9A CN108227413B (en) | 2016-12-15 | 2016-12-15 | Photoresist removing device and cleaning method thereof |
| TW106137012A TWI667555B (en) | 2016-12-15 | 2017-10-27 | Photoresist removal device and cleaning method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611162303.9A CN108227413B (en) | 2016-12-15 | 2016-12-15 | Photoresist removing device and cleaning method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108227413A CN108227413A (en) | 2018-06-29 |
| CN108227413B true CN108227413B (en) | 2023-12-08 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611162303.9A Active CN108227413B (en) | 2016-12-15 | 2016-12-15 | Photoresist removing device and cleaning method thereof |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN108227413B (en) |
| TW (1) | TWI667555B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109254506B (en) * | 2018-08-15 | 2021-10-15 | 上海华力集成电路制造有限公司 | Photoresist stripping equipment and stripping method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050211279A1 (en) * | 2001-06-26 | 2005-09-29 | Chin Kyoung H | Cleaning apparatus of a high density plasma chemical vapor deposition chamber and cleaning thereof |
| US20080035170A1 (en) * | 2006-08-11 | 2008-02-14 | Samsung Electronics Co., Ltd. | Cleaning apparatus for cleaning a chamber used in manufacturing a semiconductor device and method of cleaning a chamber by using the same |
| CN101426949A (en) * | 2006-02-27 | 2009-05-06 | 朗姆研究公司 | Integrated capacitive and inductive power sources for a plasma etching chamber |
| CN103688338A (en) * | 2011-08-01 | 2014-03-26 | 应用材料公司 | Inductive plasma sources for wafer processing and chamber cleaning |
| WO2014073686A1 (en) * | 2012-11-09 | 2014-05-15 | 株式会社和廣武 | Ozone generator and ozone generation method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4313783A (en) * | 1980-05-19 | 1982-02-02 | Branson International Plasma Corporation | Computer controlled system for processing semiconductor wafers |
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2016
- 2016-12-15 CN CN201611162303.9A patent/CN108227413B/en active Active
-
2017
- 2017-10-27 TW TW106137012A patent/TWI667555B/en active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050211279A1 (en) * | 2001-06-26 | 2005-09-29 | Chin Kyoung H | Cleaning apparatus of a high density plasma chemical vapor deposition chamber and cleaning thereof |
| CN101426949A (en) * | 2006-02-27 | 2009-05-06 | 朗姆研究公司 | Integrated capacitive and inductive power sources for a plasma etching chamber |
| US20080035170A1 (en) * | 2006-08-11 | 2008-02-14 | Samsung Electronics Co., Ltd. | Cleaning apparatus for cleaning a chamber used in manufacturing a semiconductor device and method of cleaning a chamber by using the same |
| CN103688338A (en) * | 2011-08-01 | 2014-03-26 | 应用材料公司 | Inductive plasma sources for wafer processing and chamber cleaning |
| WO2014073686A1 (en) * | 2012-11-09 | 2014-05-15 | 株式会社和廣武 | Ozone generator and ozone generation method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108227413A (en) | 2018-06-29 |
| TWI667555B (en) | 2019-08-01 |
| TW201823880A (en) | 2018-07-01 |
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