CN113097034B - Slow wave structure based on coupling resonance - Google Patents
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- 238000010894 electron beam technology Methods 0.000 claims abstract description 13
- 230000000737 periodic effect Effects 0.000 claims abstract description 4
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J23/00—Details of transit-time tubes of the types covered by group H01J25/00
- H01J23/16—Circuit elements, having distributed capacitance and inductance, structurally associated with the tube and interacting with the discharge
- H01J23/24—Slow-wave structures, e.g. delay systems
- H01J23/26—Helical slow-wave structures; Adjustment therefor
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Abstract
The present disclosure provides a slow wave structure based on coupled resonance, comprising: periodic knotA structural unit of the resonant cavity; the resonant cavity structure unit is provided with two coupling cavities in the same period, a coupling gap is formed between the coupling cavities, the coupling cavities are used for transmitting electromagnetic waves, the electromagnetic waves can be transmitted in a slow wave structure at a phase speed lower than the light speed by adopting a semicircular coupling cavity structure, and the coupling gap is used for introducing electron beam and exchanging energy with the electromagnetic waves; siO clamping by using double-layer Dirac semi-metal 2 The medium is used as a waveguide for transmitting SPPs waves and a coupling resonance component to design a slow wave structure under a terahertz frequency band, the electromagnetic energy in the waveguide is greatly enhanced by utilizing the coupling between two coupling cavities under a resonance state, a coupling groove with the length smaller than 1/4 of the coupling cavity is loaded in each period to isolate different periods, and the band-shaped electron beam realizes energy exchange with electromagnetic waves by utilizing the coupling gap between the coupling cavities so as to achieve the purpose of amplifying signals.
Description
Technical Field
The disclosure belongs to the field of microwave vacuum electronic devices, and particularly relates to a slow wave structure based on coupled resonance.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
As a microwave source with wide prospects, the electric vacuum device is widely applied to the military and civil related fields such as radar, communication and the like. When the working frequency exceeds 100GHz and even reaches the terahertz frequency band, the electronic efficiency of the all-metal slow wave structure is reduced due to the reduction of interaction coupling impedance and the increase of high-frequency loss. Because of the poor response of most materials in nature to terahertz waves, a terahertz signal source becomes a barrier for the current development of terahertz technology. Therefore, the design and research of various functional devices by using the novel terahertz material becomes a great research field in the current scientific research field.
In recent years, scientific circles propose a dirac semi-metal material working in a terahertz frequency band, which can realize discrete dirac point contact of a conduction band and a valence band of the dirac semi-metal material and linearly disperse along three directions to form a 3D dirac fermi structure, which is called as "3D graphene". As a very stable compound, the dirac semi-metal has the advantages of extremely high electron mobility, difficult interference by dielectric environment, no surface surplus electrons, easy preparation, stable performance and the like. Meanwhile, the dirac semi-metal can realize the dynamic tuning of the fermi level through alkaline surface doping. Surface plasma polarized waves (SPPs) can be excited on the surface of the dirac semi-metal material by adjusting parameters of the dirac semi-metal material, so that the diffraction limit can be broken through to realize an optical device with a sub-wavelength scale.
As one of the core components of the traveling wave tube, the slow wave structure achieves the synchronization with the velocity of the electron beam by reducing the phase velocity of the electromagnetic wave transmitted inside thereof, thereby achieving the energy exchange between the two. Due to the superiority of heat radiation performance and mechanical characteristics, the all-metal-structure coupled cavity traveling wave tube can work at higher frequency and can generate higher average power. However, the bandwidth of the slow wave structure of the coupled cavity traveling wave tube is relatively narrow due to the characteristics of the resonant cavity, so that the design of the terahertz broadband slow wave structure by utilizing the novel material of the terahertz frequency band is a difficult problem to be solved in the prior art.
Disclosure of Invention
In order to solve the above problems, the present disclosure proposes a slow wave structure based on coupled resonance, specifically a slow wave structure based on a double-layer dirac semi-metal semicircular coupling cavity.
The present disclosure provides a slow wave structure based on coupled resonance, comprising:
a resonant cavity structural unit of a periodic structure;
the resonant cavity structure unit is provided with two coupling cavities in the same period, a coupling gap is arranged between the coupling cavities, electromagnetic waves are transmitted in the coupling cavities, and the coupling gap is used for introducing electron beam and exchanging energy with the electromagnetic waves.
Compared with the prior art, the present disclosure has the following beneficial effects:
1. the present disclosure utilizes dual layer dirac semi-metal clamping of SiO 2 The medium is used as a waveguide for transmitting SPPs waves and a resonant coupling component to design a slow wave structure of a terahertz frequency band, and the semi-circular coupling cavity structure is adopted to enable electromagnetic waves to be transmitted in the slow wave structure at a phase speed lower than the speed of light. The coupling between the two coupling cavities in the resonance state is utilized to greatly enhance electromagnetic energy in the waveguide, a coupling groove with the length smaller than 1/4 of the length of the resonance cavity is loaded in each period to isolate different periods, and the band-shaped electron beam realizes energy exchange with electromagnetic waves by utilizing the coupling gap between the resonance cavities so as to achieve the purpose of amplifying signals, thereby solving the problem of how to generate a novel material which has metal characteristics and works in the terahertz frequency band as a terahertz slow wave transmission waveguide structure.
2. The present disclosure employs a coupling mode splitting technique to broaden the resonance bandwidth, generating spatial harmonics by coupling between coupling cavities at the coupling gap and increasing the longitudinal amplitude of the electric field to 10 5 V/m order, we choose to use the coupling gap for energy exchange with the electron beam. The problem that the bandwidth of the slow wave structure of the coupled cavity traveling wave tube is relatively narrow due to the characteristics of the resonant cavity is solved, and the coupled cavity traveling wave tube is applicable to terahertz slow wave transmission.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this specification, illustrate embodiments of the application and together with the description serve to explain the application.
Fig. 1 is a schematic diagram of a semi-metal semicircular coupling resonance slow wave structure based on double-layer dirac.
FIG. 2 is a fermi level E F Transmission rate and electric field axial component amplitude distribution diagram of the monocycle coupling structure in resonance state under the condition of d=0.050ev and d=2-5 μm.
FIG. 3 is E F Slow wave structure normalized phase velocity and coupling impedance distribution curve under the conditions of =0.050ev and d=2-5 μm.
FIG. 4 is E F Slow wave structure normalized phase velocity and coupling impedance profile with d=2 μm for=0.040 to 0.060ev.
The specific embodiment is as follows:
the disclosure is further described below with reference to the drawings and examples.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the application. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of exemplary embodiments according to the present application. As used herein, the singular is also intended to include the plural unless the context clearly indicates otherwise, and furthermore, it is to be understood that the terms "comprises" and/or "comprising" when used in this specification are taken to specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof.
Interpretation of the terms
Dirac semi-metal: since the discovery of graphene and topological insulators, the dirac fermi subsystem has attracted extensive research interest in the scientific community. Graphene is known for its unique optical and electrical properties produced by its two-dimensional monoatomic thickness dirac fermi substructure. As a 3D graphene structure, the dirac semi-metal has unique crystal symmetry protection characteristics, can generate ultrahigh carrier mobility, and can regulate and control the fermi level by chemical doping and the like, so that the dirac semi-metal has great application prospect in a plurality of fields of optoelectronics.
According to the random phase approximation theory, the surface conductivity of the dirac semi-metal material is obtained by utilizing a Kubo equation. Taking AlCuFe as an example, the thickness of the Dirac semi-metal is set to 0.2 μm. By adjusting the material parameters, the real part value of the conductivity of the dirac semi-metal in the terahertz frequency band is negative, and the dirac semi-metal has metal characteristics and meets the requirement of exciting and transmitting SPPs waves on the surface of the dirac semi-metal.
Example 1
As shown in fig. 1, a slow wave structure based on double-layer dirac half-metal coupling resonance includes:
a resonant cavity structural unit of a periodic structure;
the resonant cavity structure unit is provided with two coupling cavities in the same period, a coupling gap is formed between the coupling cavities, the coupling cavities are used for transmitting electromagnetic waves, the electromagnetic waves can be transmitted in a slow wave structure at a phase speed lower than the light speed by adopting a semicircular coupling cavity structure, and the coupling gap is used for introducing electron beam and exchanging energy with the electromagnetic waves. The frequency bandwidth of the slow wave structure is widened by using a coupling mode splitting method, and the energy exchange of the electron beam and the electromagnetic wave is completed by using a coupling gap between the coupling cavities.
As one implementation mode, the resonant cavity adopts double-layer Dirac semi-metal clamping SiO 2 Semicircular coupling cavity waveguide structure. Wherein, the inner and outer radiuses of the coupling cavity structure are r respectively 2 And r 1 The inner and outer radiuses of the coupling groove structure are r respectively 4 And r 3 . The space between the coupling cavities is air, the space is d, the electron beam is coupled with the electromagnetic wave transmitted in the waveguide by using the space and completes energy exchange, and the electromagnetic wave can be transmitted in the slow wave structure at a phase speed lower than the speed of light by adopting the semicircular coupling cavity structure. Specifically, the area between the coupling cavities is air.
Furthermore, the two adjacent coupling cavities in the same period are distributed in a staggered manner, and the two coupling cavities have the same size. The two coupling cavities of the slow wave structure are identical in size and are placed in a staggered mode, two peak values are split at two sides of a resonance frequency point by coupling mode splitting under a resonance state, the two peak values are respectively corresponding to a symmetrical mode and an anti-symmetrical mode, and a transmission passband meeting a certain frequency bandwidth is generated between the two peak value frequency points.
Furthermore, the resonant cavity structural unit is also provided with a coupling groove in the same period, one end of the coupling groove is communicated with the coupling cavity in the current period, and the other end of the coupling groove is communicated with the coupling cavity in the next period; as one implementation mode, the coupling groove adopts double-layer Dirac semi-metal clamping SiO 2 Is a semicircular ring type waveguide structure. As a preferred embodiment, the coupling groove has a length smaller than a quarter of the length of the coupling cavity. In particular, the coupling slot between adjacent periods of the slow wave structure can be considered as a transmission transition zone having a length less than one-fourth the length of the coupling cavity.
As one embodiment, the slow wave structure further includes an input end and an output end, wherein an outlet of the input end is coaxially arranged with an inlet of the first coupling cavity of the first period, and can be used for transmitting electromagnetic waves, and a coupling gap is formed between the outlet of the input end and the inlet of the front coupling cavity of the first period; the inlet of the output end and the inlet of the tail end coupling cavity of the last period are coaxially arranged and can be used for transmitting electromagnetic waves; as a preferred implementation mode, the input end and the output end adopt double-layer Dirac semi-metal materials to clamp SiO 2 And (5) forming.
This practice isExample SiO was clamped using a double layer Dirac semi-metal 2 The medium is used as a waveguide for transmitting SPPs waves and a resonant coupling component to design a slow wave structure under a terahertz frequency band, electromagnetic energy in the waveguide is greatly enhanced by utilizing the coupling between two coupling cavities under a resonant state, a coupling groove with the length smaller than 1/4 of the coupling cavity is loaded in each period to isolate different periods, and the band-shaped electron beam realizes energy exchange by utilizing the coupling gap between the coupling cavities and electromagnetic waves so as to achieve the purpose of amplifying signals.
Specifically, the present embodiment uses Transverse Magnetic (TM) waves to excite ε shown in FIG. 1 1 Semi-metal/epsilon of dirac 2 Semi-metal/epsilon of dirac 1 Waveguide structure for analyzing dispersion characteristics of SPPs wave, wherein ε 1 Is air, epsilon 2 Is SiO 2 . The waveguide is assumed to be large enough in the width y-direction to meet that its width is much greater than the thickness of the double layer dirac half metal in the x-direction. The electromagnetic field is uniform along the transverse direction of waveguide transmission, i.e., the y-direction and the x-direction, i.e., there is no standing wave distribution, and then individual TM modes can both meet the boundary conditions shown in fig. 1 and can exist independently in the waveguide. Since the TM wave in the waveguide satisfies H x = z = y =0, only analysis H is required in dispersion analysis y 、E x 、E z Three field components are required. Assuming that the electromagnetic field transmitted in the waveguide is a time-harmonic field, its magnetic field component satisfies H (ω, t) =h (, t) exp (β) SPP z-iωt), where β spp Is the propagation constant value of SPPs wave in double-layer Dirac semi-metal.
Solving maxwell's equations by using equivalent surface current value as boundary condition between two layers of medium to obtain dispersion relation model of SPPs wave transmitted between two layers of dirac semi-metals as
Wherein the symbols "+" and "-" correspond to asymmetric and symmetric transmission modes, respectively, of a dual-layer dirac half-metal SPPs waveguide. The present study uses the fundamental mode of SPPs in the waveguide, i.e., the symmetric transmission mode. Formula (1)) K in (k) m The wavenumber values transmitted along the axial direction in FIG. 1 can be expressed as
The equation (2) is introduced into the equation (1) to obtain the propagation constant value beta of SPPs wave in the double-layer Dirac semi-metal spp . Because the transmission constants of SPPs waves transmitted between SPPs waves generated by the terahertz frequency band double-layer Dirac semi-metal material are larger than the transmission constants in the air in the terahertz frequency band due to the mutual coupling between SPPs waves, in order to reduce the phase velocity of the SPPs waves in a waveguide, the double-layer Dirac semi-metal clamping SiO shown in figure 1 is adopted 2 The semicircular coupling cavity waveguide structure is used as a resonant cavity structural unit. As shown in FIG. 1, the inner and outer radii of the coupling cavity structure are r respectively 2 And r 1 The inner and outer radiuses of the coupling groove structure are r respectively 4 And r 3 . Air is arranged in the gap between the coupling cavities, the distance between the air and the coupling cavities is d, and the electron beam is coupled with the transmission electromagnetic wave in the waveguide by using the gap and completes energy exchange. In the numerical calculation process, the parameters adopting the slow wave structure are specifically set to d=2-5 mu m, r 1 =80μm,r 2 =40μm,r 3 =45μm,r 4 =5μm,ε SiO2 =2.09, dirac half-metal fermi level E F =0.040 to 0.060 eV. The electric field intensity in the coupling cavity and the surface of the coupling cavity can be sharply increased in the resonance state, and the axial component of the electric field in the coupling cavity, especially the coupling gap between the coupling cavity and the waveguide, can be greatly enhanced to 10 5 V/m order, so the electromagnetic wave is selected to exchange energy with the electron beam by using the coupling gap. The slow wave structure bandwidth of the coupled cavity traveling wave tube is relatively narrow due to the characteristics of the resonant point of the resonant cavity, and the resonant bandwidth is widened by adopting a coupling mode splitting technology. Fig. 2 shows fermi level E F The distribution diagram of the transmission rate and the axial component amplitude of the electric field of the monocycle coupling structure in the resonance state under the conditions of d=0.050ev and d=2-5 μm can be seen that the coupling enhancement between the two resonators causes the further increase of the transmission bandwidth along with the decrease of the coupling gap, and the electric fieldThe axial component amplitude also increases. The region between the two transmission peaks is typically referred to as the transmission window of the slow wave structure. Obtaining propagation constant beta of fundamental mode by using dispersion relation spp Substituted into formulaThe normalized phase velocity value can be obtained, wherein, c is the light velocity in vacuum, f is the current working frequency, P is the structural factor, and is expressed as +.>Fig. 3 shows fermi level E F Normalized phase velocity and coupling impedance profile for slow wave structures at different coupling distances =0.050 eV. It can be seen that the normalized phase velocity takes a value between 0.2 and 0.3 in the 0.7-1.0 THz region, and the coupling impedance value is greater than 3 ohms in the whole frequency band when the coupling distance d=2μm. By utilizing the unique doping adjustability of the dirac semi-metallic material itself, the fermi level E is adjusted F The normalized phase velocity and the coupling impedance value can be dynamically adjusted within a certain frequency band range between 0.040 and 0.060eV, as shown in figure 4.
The foregoing description of the preferred embodiments of the present disclosure is provided only and not intended to limit the disclosure so that various modifications and changes may be made to the present disclosure by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present disclosure should be included in the protection scope of the present disclosure.
While the specific embodiments of the present disclosure have been described above with reference to the drawings, it should be understood that the present disclosure is not limited to the embodiments, and that various modifications and changes can be made by one skilled in the art without inventive effort on the basis of the technical solutions of the present disclosure while remaining within the scope of the present disclosure.
Claims (1)
1. A slow wave structure based on coupled resonance, comprising:
a resonant cavity structural unit of a periodic structure;
the resonant cavity structure unit is provided with two coupling cavities in the same period, a coupling gap is formed between the coupling cavities, electromagnetic waves are transmitted in the coupling cavities, and the coupling gap is used for introducing electron beam and exchanging energy with the electromagnetic waves;
the two adjacent coupling cavities in the same period are distributed in a staggered way; the sizes of the two adjacent coupling cavities in the same period are the same;
the resonant cavity structure unit is also provided with a coupling groove in the same period, one end of the coupling groove is communicated with the coupling cavity in the current period, and the other end of the coupling groove is communicated with the coupling cavity in the next period;
the area between the coupling cavities is air;
the length of the coupling groove is smaller than the length of a quarter of the coupling cavity;
the coupling groove adopts double-layer Dirac semi-metal clamping SiO 2 A semicircular waveguide structure;
the coupling cavity adopts double-layer Dirac semi-metal clamping SiO 2 The semicircular coupling cavity waveguide structure is used for enabling electromagnetic waves to be transmitted in the slow wave structure at a phase speed lower than the speed of light;
the slow wave structure further comprises an input end and an output end, wherein an outlet of the input end is coaxially arranged with an inlet of the front end coupling cavity of the first period, and an inlet of the output end is coaxially arranged with an inlet of the tail end coupling cavity of the last period;
the input end and the output end adopt double-layer Dirac semi-metal clamping SiO 2 Is a semicircular ring type waveguide structure.
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US5422596A (en) * | 1994-06-30 | 1995-06-06 | The United States Of America As Represented By The Secretary Of The Navy | High power, broadband folded waveguide gyrotron-traveling-wave-amplifier |
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CN102915898A (en) * | 2012-10-25 | 2013-02-06 | 电子科技大学 | Zigzag waveguide slow-wave line |
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