CN113091055B

CN113091055B - Ignition device and semiconductor device

Info

Publication number: CN113091055B
Application number: CN202110292130.7A
Authority: CN
Inventors: 王立卡; 石磊
Original assignee: Beijing Naura Microelectronics Equipment Co Ltd
Current assignee: Beijing Naura Microelectronics Equipment Co Ltd
Priority date: 2021-03-18
Filing date: 2021-03-18
Publication date: 2023-06-16
Anticipated expiration: 2041-03-18
Also published as: CN113091055A

Abstract

The application discloses ignition and semiconductor device, ignition includes: an ignition chamber; the first air inlet pipe is provided with a first air outlet and is communicated with the ignition cavity and used for introducing first gas into the ignition cavity; the second air inlet pipe is provided with a second air outlet and is communicated with the ignition cavity and used for introducing second air into the ignition cavity, and the first air outlet and the second air outlet are oppositely arranged, so that the first air and the second air introduced into the ignition cavity form a butt-flow air flow; the heating element of the heater is arranged at least around the outer walls of the first air inlet pipe and the second air inlet pipe, which are close to one end of the ignition chamber, and is used for heating the first gas and the second gas which are introduced into the ignition chamber to an ignition temperature; and the exhaust pipe is used for conveying the reaction gas generated by ignition in the ignition chamber to the reaction chamber. The firing chamber is capable of meeting wide flow range firing requirements.

Description

Ignition device and semiconductor device

Technical Field

The application relates to the technical field of semiconductors, in particular to an ignition device and semiconductor equipment.

Background

Among semiconductor heat treatment equipment, the wet oxygen oxidation process has an advantage of a fast film formation rate, and has been widely used by integrated circuit manufacturers. Pure water vapor is an indispensable reaction gas in a wet oxygen oxidation process, pure hydrogen and oxygen are introduced into an external ignition device according to a certain proportion in vertical oxidation furnace equipment, and under the action of an external heater, the hydrogen is vigorously combusted in the oxygen to generate pure water vapor to enter a reaction chamber. Along with the development of the process, the requirements of implementing the ignition of different oxyhydrogen flows are met at different stages in the same process, and the external ignition device is required to meet the requirements of implementing the ignition of different oxyhydrogen flows in a wider flow range.

In the prior art, in order to meet the ignition requirements of different oxyhydrogen flows, a plurality of ignition devices suitable for different flow ranges are often required to be configured to meet the oxyhydrogen ignition requirements from small flow to large flow, so that the problems of long equipment maintenance time, high cost and low process efficiency are caused.

Accordingly, there is a need for an ignition device that can meet the ignition requirements over a wide flow range.

Disclosure of Invention

In view of the above, the present application provides an ignition device, an ignition method thereof, and a semiconductor device, so as to meet the ignition requirement in a wider flow range.

An ignition device for delivering a reaction gas to a reaction chamber of a semiconductor device, comprising: an ignition chamber; the first air inlet pipe is provided with a first air outlet, and the first air outlet is communicated with the ignition cavity and is used for introducing first gas into the ignition cavity; the second air inlet pipe is provided with a second air outlet, the second air outlet is communicated with the ignition cavity and is used for introducing second gas into the ignition cavity, and the first air outlet and the second air outlet are oppositely arranged, so that the first gas and the second gas introduced into the ignition cavity form a butt-flow air flow; the heating element of the heater is arranged at least around the outer walls of the first air inlet pipe and the second air inlet pipe, which are close to one end of the ignition chamber, and is used for heating the first gas and the second gas which are introduced into the ignition chamber to an ignition temperature; and the exhaust pipe is communicated with the ignition chamber and is used for conveying reaction gas generated by ignition in the ignition chamber to the reaction chamber.

Optionally, the projections of the first air outlet and the second air outlet in a plane perpendicular to the air outlet direction at least partially overlap.

Optionally, the distance between the first air outlet and the second air outlet ranges from 10mm to 100mm. .

Optionally, the ignition chamber is a cylinder, and has two circular and opposite bottom surfaces; the first gas inlet pipe and the second gas inlet pipe are respectively inserted into the ignition cavity from the circle centers of the two opposite bottom surfaces.

Optionally, the heater further comprises a heat insulation layer, and the heat insulation layer is wrapped on the periphery of the ignition chamber and the periphery of the heating element.

Optionally, the method further comprises: and the detection end of the temperature measuring element is arranged in the ignition cavity and used for detecting the internal temperature of the ignition cavity.

Optionally, a detection end of the thermal sensor temperature measuring element is located beside the first air outlet and/or the second air outlet.

Optionally, the method further comprises: and the pipeline heat preservation sleeve is wrapped on the outer wall of the exhaust pipe.

Optionally, the method further comprises: and the cooling device is at least arranged at part of the outer wall of the heater.

Optionally, the method further comprises: the cooling device is positioned at the openings at the two ends of the cavity and is fixedly connected with the fixing plate; the heater is arranged in a cavity surrounded by the fixing plate and the cooling device.

Optionally, the cooling device comprises a water cooling plate, and a cavity or a pipeline for containing cooling liquid is arranged in the water cooling plate.

Optionally, the method further comprises: and the flexible heat preservation sleeve is at least used for wrapping the surface of the heater facing the fixed plate and is positioned between the heater and the fixed plate.

Optionally, the method further comprises: and the third air inlet pipe is communicated with the ignition chamber and is used for introducing purge gas into the ignition chamber.

The present application also provides a semiconductor device including: an ignition device as claimed in any one of the preceding claims; a reaction chamber; and the exhaust pipe of the ignition device is communicated with the reaction chamber and is used for conveying reaction gas generated by ignition in the ignition chamber to the reaction chamber.

The first gas outlet and the second gas outlet of the ignition device are oppositely arranged, so that the introduced first gas and second gas can form opposite flushing gas flow. The first gas and the second gas are introduced into rapid contact, are mixed at the gas flow junction surface, and are diffused outward along the junction surface. When the concentration ratio and the temperature of the two are proper, combustion occurs, and flame diffuses outwards along with gas from the gas flow joint surface to form a circular flame surface positioned at the gas flow joint surface. Because flame is generated only in a small range at the air flow mixing junction, even if the gas flow is very small, the ignition concentration requirement can be met; if the gas flow is large, the concentration at the gas flow mixing interface is too large, so that the gas is not beneficial to ignition, the gas is transversely diffused along the gas bonding surface, along with the gas diffusion, after the concentration is diffused to a proper proportion, the ignition concentration requirement can still be met, the gas flow velocity in the diffusion area is reduced, and the flame cannot be blown out due to the too large gas flow velocity. Therefore, the ignition device can meet the ignition requirement of a wider flow range.

Further, as the first air outlet is opposite to the second air outlet, the first air can meet the second air (combustion-supporting air) when being ejected, the concentration of the second air required by air combustion can be met, and the air in the ignition cavity is not required to be replaced by excessive second air, so that the control of the technological parameters of the semiconductor process involving the reaction air generated after ignition is facilitated.

Drawings

In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings that are needed in the description of the embodiments will be briefly introduced below, it being obvious that the drawings in the following description are only some embodiments of the present application, and that other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.

Fig. 1 to 3 are schematic structural views of an ignition device according to an embodiment of the present application;

fig. 4 is a schematic structural view of a semiconductor device according to an embodiment of the present application.

Detailed Description

As described in the background art, the existing ignition device cannot meet the requirement of wide flow range ignition. Taking oxyhydrogen ignition as an example, in the existing ignition device, hydrogen is introduced into oxygen so that the hydrogen burns in the oxygen. Before ignition, firstly, completely replacing nitrogen, oxygen or other process residual gases, water vapor and the like in a combustion chamber with oxygen, then introducing the oxygen and hydrogen heated to a higher temperature into the combustion chamber, and severely combusting the hydrogen in the combustion chamber filled with oxygen to generate the water vapor to enter the reaction chamber to react with the oxidation process. In order to ensure stable combustion of hydrogen, the diameter of the outlet of hydrogen is usually required to be larger to reduce the outlet speed of hydrogen, so that the phenomenon that flame is blown out due to the too high outlet speed is avoided. However, under the condition of carrying out small-flow oxyhydrogen ignition, the hydrogen gas outlet diameter is large, the hydrogen flow is small, so that the concentration of the hydrogen is too low, and the hydrogen cannot burn. Therefore, the prior art ignition device cannot meet the ignition requirement of a wide flow range.

Further, the inventors have found that a large amount of oxygen is required to replace nitrogen in the combustion chamber before the hydrogen is combusted in order to avoid the risk of explosion due to the gas being impure, but this also causes oxygen to be introduced into the reaction chamber, which is disadvantageous in controlling the thickness of the oxide film formed in the reaction chamber.

Based on the above findings, the inventors have proposed a new ignition device capable of solving the above problems.

The following description of the embodiments of the present application will be made clearly and fully with reference to the accompanying drawings, in which it is evident that the embodiments described are only some, but not all, of the embodiments of the present application. All other embodiments, which can be made by those skilled in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application. The various embodiments described below and their technical features can be combined with each other without conflict.

Fig. 1 is a schematic structural diagram of an ignition device according to an embodiment of the invention.

In this embodiment, the ignition device includes an ignition chamber 100, a first intake pipe 102, a second intake pipe 103, a heater 200, and an exhaust pipe 105. The ignition device is used for conveying reaction gas to a reaction chamber of the semiconductor device.

The first air inlet pipe 102 is communicated with the ignition chamber 100 and is provided with a first air outlet for introducing first air into the ignition chamber 100; the second air inlet pipe 103 is communicated with the ignition chamber 100 and is provided with a second air outlet for introducing second air into the ignition chamber. The ignition chamber 100, the first air inlet pipe 102 and the second air inlet pipe 101 are made of high-temperature-resistant and corrosion-resistant glass materials.

The first gas and the second gas are combustible gases, and the first gas and the second gas can be reasonably selected according to the combustion reaction products to be generated. The first gas may be a combustible gas such as hydrogen, carbon monoxide, methane, ethane, propane, butane, ethylene, propylene, butylene, acetylene, propyne, butyne, hydrogen sulfide, phosphine, etc., and the second gas may be a combustion-supporting gas such as oxygen, chlorine, ozone, etc.

In this embodiment, the first gas is hydrogen and the second gas is oxygen, which is used for ignition combustion to generate steam commonly used in semiconductor processes.

In this embodiment, the first air outlet of the first air inlet pipe 102 is opposite to the second air outlet of the second air inlet pipe 103, so that the first air and the second air can form opposite air flows. By reasonably setting the distance between the two air outlets, the first air and the second air can be contacted rapidly, are mixed at the air flow joint surface and are diffused outwards along the joint surface. The distance between the first air inlet pipe 102 and the second air inlet pipe 103 is required to meet the requirement of forming the opposite flow, and if the distance between the first air inlet pipe and the second air inlet pipe is too large, the air flow rate at the mixing interface of the first air and the second air is too small to form the opposite flow. When the concentration ratio and the temperature of the two gases are proper, the first gas and the second gas are combusted, and the flame diffuses outwards along with the gases from the gas flow joint surface to form a circular flame surface positioned at the gas flow joint surface. In this embodiment, since the first air outlet is opposite to the second air outlet, oxygen can be encountered when the hydrogen is ejected, so that the oxygen concentration required by hydrogen combustion can be satisfied, and the gas in the ignition chamber does not need to be replaced by introducing excessive oxygen.

In this embodiment, the first air inlet pipe 102 and the second air inlet pipe 103 are inserted into the ignition chamber 100 to minimize the distance between the first air outlet and the second air outlet. The side walls of the first air inlet pipe 102 and the second air inlet pipe 103 are in sealing connection with the chamber wall of the ignition chamber 100. Preferably, the side walls of the first air inlet pipe 102 and the second air inlet pipe 103 are welded to the wall of the ignition chamber 100. In other embodiments, the first air inlet pipe 102 and the second air inlet pipe 103 may be detachably inserted into the ignition chamber 100, and the side walls of the first air inlet pipe 102 and the second air inlet pipe 103 are detachably fixed with the chamber wall of the ignition chamber 100 through a sealing member, so that the ignition chamber is convenient to replace.

In other embodiments, the first air inlet pipe 102 and the second air inlet pipe 103 do not need to be inserted into the ignition chamber 100, and the first air inlet and the second air inlet are formed on the chamber wall of the ignition chamber 100, so long as the distance between the two air outlets can meet the requirement of forming the opposite air flow.

The exhaust pipe 105 is connected to the ignition chamber 100, and is used for exhausting the gas in the ignition chamber 100, in particular, exhausting the reaction gas formed by burning the first gas and the second gas into the reaction chamber of the required semiconductor device.

The heater 200 includes at least a heating element disposed around at least a portion of the outer wall of the first and

second inlet pipes

102 and 103 near one end of the ignition chamber 100 for heating the first and second gases introduced into the ignition chamber 100 to an ignition temperature. In this embodiment, the ignition temperature of the hydrogen and oxygen is 400 ° to 1000 °, such as 800 °, at which a suitable concentration ratio of hydrogen and oxygen will burn.

In this embodiment, the ignition chamber 100, the first air inlet pipe 102 and the second air inlet pipe 103 are closed near the ignition chamber 100, and are wrapped inside by the heater 200. The heater 200 comprises a heating element 201 and a heat insulation layer 202, wherein the heating element 201 is arranged on the pipe wall of a part of the length of the first air inlet pipe 102 and the second air inlet pipe 103, which is close to the ignition chamber 100; the heat insulation layer 200 is an outer layer structure, and wraps the heated part of the pipe walls of the first air inlet pipe 102 and the second air inlet pipe 103, the heating element 201, and the ignition chamber 100. The insulating layer 202 is used to reduce heat dissipation, collect heat inside the heater 200, and improve the heating efficiency of the heater 200. Moreover, the heat-insulating layer 202 wraps the whole ignition chamber 100, so as to ensure that the internal temperature of the ignition chamber 100 meets the ignition requirement, and avoid excessive temperature drop after the gas is introduced into the ignition chamber, so that the gas cannot be ignited.

In this embodiment, the heating element 201 of the heater 200 is disposed between the walls of the first air inlet pipe 102 and the second air inlet pipe 103 and the heat insulation layer 202, and the ignition chamber 100 is only wrapped with the heat insulation layer 202, and the heat insulation layer 202 is used to insulate the ignition chamber 100. In other embodiments, a heating element 201 may be disposed between the chamber wall of the ignition chamber 100 and the insulating layer 202, so as to heat the inside of the ignition chamber 100.

The first gas and the second gas introduced into the ignition chamber 100 are combusted to generate reaction gas, which is then discharged through the exhaust pipe 105. In this embodiment, the outer wall of the exhaust pipe 105 is further wrapped with a pipe insulation sleeve 600, and the pipe insulation sleeve 600 plays a role in insulating high-temperature vapor passing through the exhaust pipe 105, so that the problem that the high-temperature vapor is liquefied due to excessive temperature reduction and cannot participate in subsequent reactions, and the process result is affected is avoided.

The ignition device further comprises a cooling device 300, which is at least arranged at a part of the outer wall of the heater 200 and is used for cooling the surface of the heater 200, so that the heater 200 is prevented from releasing heat to the external environment, the environment is ensured to be in a room temperature state, and the safety of other surrounding components is ensured. The cooling device 300 adopts a water cooling device, and the surface of the heater 200 is cooled by a water circulation pipeline. Specifically, the cooling device 300 includes a water-cooling plate having a cavity or a pipe for containing a cooling liquid therein, and the water-cooling plate is disposed proximate to the surface of the heater 200. In other embodiments, other suitable types of cooling devices may be employed, and one skilled in the art may select a suitable cooling device based on the cooling objective. The cooling device 300 is more efficient at blocking the heater from dissipating heat to the outside environment than the flexible insulating sleeve 400.

The ignition device further comprises a fixing plate 800, the fixing plate 800 encloses a cavity with openings at two ends, the cooling device 300 is positioned at the openings at two ends of the cavity and is fixedly connected with the fixing plate 800 to form the cavity; the heater 200 is disposed in a cavity defined by the fixing plate 800 and the cooling device 300, and the positions of the cooling device 300 and the heater 200 are fixed by the fixing plate 800. In this embodiment, the cooling device 300 is disposed on the outer wall of the heater 200 opposite to the side wall of the ignition chamber 100, and the heat insulation layer 201 of the heater 200 at the side wall of the ignition chamber 100 is smaller in thickness, so that the heat is easier to release, and the cooling device 300 is disposed at the position, so that the cooling effect can be improved.

The ignition device further comprises a flexible heat preservation sleeve 400, at least the part of the surface of the outer wall of the heater 200 is wrapped, the heat preservation sleeve is used for preserving heat of the heater 200, internal heat of the heater 200 is effectively prevented from being dissipated to an external space, internal heat accumulation of the heater 200 is guaranteed, heating efficiency of the heater 200 is improved, and then air outlet temperatures of the first air inlet pipe 102 and the second air inlet pipe 103 are improved.

The flexible insulation 400 wraps at least the surface of the heater 200 facing the fixing plate 800, and is located between the heater 200 and the fixing plate 800. The flexible insulation sleeve 400 has elasticity, can accommodate processing errors of the heater 200, and avoids the fixing plate 800 from extruding the heater 200; in addition, the flexible insulation cover 400 installed between the heater 200 and the cooling device 300 can effectively absorb the dimensional change between the heater 200 and the cooling device 300 caused by the temperature change, and the heater 200 is prevented from being broken by the extrusion crack. The material of the flexible insulation cover 400 may be foamed plastic, foam, felt or the like. In this embodiment, the flexible insulation 400 covers only the surface of the heater 200 where the cooling device 300 is not provided. Because the thickness of the insulating layer 201 covering the first bottom surface 1001 (please refer to fig. 3) and the second bottom surface 1002 (please refer to fig. 3) of the ignition chamber 100 is larger, the temperature drop is less when the heat is transferred to the surface of the heater 200, and the flexible insulating sleeve 400 can meet the control requirement of heat dissipation.

In other embodiments, a flexible insulation 400 and a cooling device 300 may be provided at each surface of the heater 200, and the flexible insulation 400 is disposed between the cooling device 300 and the heater 200.

In this embodiment, the ignition device further includes a purge gas inlet pipe 104, which is in communication with the ignition chamber 100, for introducing a purge gas into the ignition chamber 100. The purge gas may be inert gas such as nitrogen, he, etc. and is used to purge residual reaction gas in the ignition chamber 100 into the exhaust pipe 105 and exhaust the reaction gas after the ignition process is completed by introducing the purge gas into the ignition chamber 100.

The ignition device further comprises a temperature measuring element 500, wherein a detection end of the temperature measuring element 500 is arranged in the ignition chamber 100 and is used for detecting the internal temperature of the ignition chamber 100. The heating temperature of the first gas and the second gas by the heater 200 is further controlled according to the detected temperature to ensure that the first gas and the second gas introduced into the ignition chamber 100 reach the combustion temperature, so that the ignition is smoothly performed.

Fig. 2 and 3 are schematic partial structures of an ignition device according to an embodiment of the invention.

The first air outlet is opposite to the second air outlet, and the first air and the second air can form circular flame which diffuses along the center of the air mixing junction surface to the periphery after being ignited. The circular flame is not limited to a perfect circle, but includes a nearly circular shape such as a perfect circle, an ellipse, etc., due to the fact that the gas is a fluid, a gas flow direction, a diffusion rate, etc. Since the gas concentration is the largest in the center of the gas mixing junction, the thickness of the flame can be reduced from the center image edge as the gas concentration is smaller toward the periphery.

In this embodiment, the ignition chamber 200 is a cylinder (please refer to fig. 3) having a circular first bottom surface 1001 and a second bottom surface 1002 opposite to each other, and a cross section is circular to match the shape of the flame.

The second air intake pipe 103 is vertically inserted into the ignition chamber 100 from the first bottom surface 1001, and the first air intake pipe 102 is vertically inserted into the ignition chamber 100 from the second bottom surface 1002. Preferably, the second air inlet pipe 103 and the first air inlet pipe 102 are respectively inserted into the ignition chamber 100 from the center of the bottom surface, so that the flame generated by ignition is located in the middle of the ignition chamber 100, and is prevented from being burnt to the wall of the ignition chamber 100. In this embodiment, since the hydrogen density is smaller than the oxygen density, the first air inlet pipe 102 is disposed at the bottom of the ignition chamber 100, so that the hydrogen flow is introduced into the ignition chamber 100 upwards, and the hydrogen density is smaller, and is easier to diffuse upwards to mix with the oxygen flow above. In other embodiments, the direction of the introduction of the first gas and the second gas may also be exchanged.

In order to ensure uniformity of flame, it is necessary to allow the gas ejected from the first gas inlet pipe 102 and the second gas inlet pipe 103 to be sufficiently mixed in contact, and projections of the first gas outlet and the second gas outlet in a plane perpendicular to the gas outlet direction are at least partially overlapped. In this embodiment, the aperture sizes of the air outlets of the first air inlet pipe 102 and the second air inlet pipe 103 are the same, the central axes of the first air outlet and the second air outlet are overlapped, the cross-sectional sizes of the emitted hydrogen air flow and the emitted oxygen air flow are the same, the positions are opposite, and the mixture can be relatively uniformly mixed at each position of the air flow combining surface.

The closer to the air outlet, the greater the velocity of the exiting air stream. In the embodiment of the invention, if the distance between the first air outlet and the second air outlet is too small, the opposite air flow is excessively strong in collision and is disturbed, stable flame cannot be formed, and the flame is easily blown out due to too close distance to the air outlet; if the first gas and the second gas flow between the first gas outlet and the second gas outlet are not in contact, diffusion is generated, so that the concentration of the gas on the contact surface is low, and a circular flame surface cannot be formed. In this embodiment, the diameter of the ignition chamber 100 ranges from 50mm to 300mm, the height ranges from 20mm to 200mm, and the distance between the air outlets of the first air inlet pipe 102 and the second air inlet pipe 103 ranges from 10mm to 100mm.

In this embodiment, the temperature sensing element is mounted into the ignition chamber 100 by a mounting tube 106. The mounting tube 106 is a glass tube, and is inserted into the ignition chamber from the side of the second air inlet tube 103, and the end of the mounting tube 106 inserted into the ignition chamber 200 is sealed for placing a temperature measuring element (not shown in the figure). The end of the mounting tube 106 is inserted into the second air outlet close to the second air inlet tube 103, so that the detection end of the temperature measuring element can be located beside the second air outlet of the second air inlet tube 103, so as to accurately obtain the temperature of oxygen entering the ignition chamber 100. In other embodiments, the mounting tube 106 may be disposed beside the first air inlet, or temperature measuring elements may be disposed beside the first air outlet and the second air outlet. The temperature measuring element can adopt a thermocouple, the temperature inside the ignition chamber 100 is measured in real time through the temperature measuring element, and when the temperature inside the ignition chamber 100 is stabilized at a higher temperature, the first gas and the second gas are introduced, so that the phenomenon that hydrogen cannot burn due to too low temperature is avoided.

Since combustion occurs only in a small area between the first air outlet and the second air outlet, measuring the temperature at the air outlet can more effectively control the heating temperature of the heater 200 so that it meets the ignition requirements than measuring the temperature at other locations in the ignition chamber 100.

In the ignition device, when the first gas and the second gas are emitted at a smaller flow rate, the concentrations of the two gases are uniformly mixed in a smaller area between the first gas outlet and the second gas outlet and are in a combustible equivalent ratio, and the ignition device ignites and burns at the moment to form wafer-shaped flame with thinner thickness; when the two gases are emitted at a large flow, the first gas and the second gas meet and diffuse to the periphery to form a circular gas mixing surface, and when the concentration of the gases diffuses to the oxyhydrogen combustion equivalence ratio, the gases can be combusted to form circular flames with large sizes. In some embodiments, when the gas outlet aperture is consistent and the gas outlet aperture is high, the gas flow rate required by the concentration is obviously larger than that of the other gas, for example, the hydrogen flow rate is larger than that of the oxygen flow rate, so that the gas is easier to diffuse towards the oxygen direction, the flame edge is inclined towards the oxygen side, and the flame is in a disc shape as a whole.

After the diameters of the first air outlet and the second air outlet are determined, the ignition requirements from small flow to large flow of the first air and the second air can be met, the ignition requirements of different flow ranges in the same process can be met, various ignition chambers are not required to be configured, the equipment utilization rate can be remarkably improved, and the process efficiency is improved.

Furthermore, as the first air outlet is opposite to the second air outlet, the first air can meet the second air (combustion-supporting air) when being ejected, the concentration of the second air required by air combustion can be met, and the air in the ignition cavity is not required to be replaced by excessive second air, so that the control of the technological parameters of the semiconductor process participated by the reaction air generated after ignition is facilitated. For example, in the oxyhydrogen ignition process, it is not necessary to replace the gas in the combustion chamber by introducing an excessive amount of oxygen, and it is advantageous to control the thickness of the oxide film generated when the water vapor generated by the ignition is discharged as the oxidizing gas.

Further, the flame is located in the area between the first air outlet and the second air outlet, so that the flame can be effectively prevented from burning the air outlet, and safe operation of the ignition chamber is ensured.

The embodiment of the invention also provides a semiconductor device.

Fig. 4 is a schematic structural diagram of a semiconductor device according to an embodiment of the invention.

In this embodiment, the semiconductor device includes the ignition device described in the above embodiment, and the reaction chamber 700. The exhaust pipe 105 of the ignition device is connected to the reaction chamber 700, and is used for exhausting the reaction gas generated by the ignition device into the reaction chamber 700.

In this embodiment, the semiconductor device is a vertical oxidation furnace device, the ignition chamber 100 of the ignition device is used for igniting hydrogen and oxygen, and water vapor generated by ignition enters the reaction chamber 700 through the exhaust pipe 105 to participate in oxidation reaction, so that an oxide film is formed on the surface of the wafer to be processed.

Because the ignition device does not need to introduce a large amount of oxygen to replace the gas in the ignition chamber before ignition, the oxidizing gas introduced into the reaction chamber 700 after ignition is mainly water vapor, which is beneficial to controlling the thickness of the formed oxide film.

In addition, the ignition device can meet the requirements of small-flow gas ignition and large-flow gas ignition, can meet the requirements of different process stages in the same process on different ratios of gas ignition, and meets the requirements of different process stages on film thickness, film forming speed and quality, so that the ignition device can be suitable for the requirements of the whole oxidation reaction process flow only by one set of ignition device, a plurality of sets of ignition devices are not required to be configured, the equipment performance can be improved, the equipment structure is simplified, and the cost is reduced.

In other embodiments, the semiconductor device may be other processing devices that require the introduction of a reactive gas generated by ignition, which is not limited herein.

The embodiment of the invention also provides an ignition method of the ignition device, and the ignition device comprises an ignition chamber.

The ignition method comprises the following steps: and injecting a first gas and a second gas with combustion temperature into the ignition cavity, wherein the injection directions of the first gas and the second gas are opposite, so that the opposite air flows are mixed and diffused, and the circular flame is ignited.

In this embodiment, the first gas is hydrogen, the second gas is oxygen, and the combustion temperature is 400 ° to 1000 °, so as to meet the temperature requirement of oxyhydrogen combustion. In order to meet the concentration requirements of hydrogen and oxygen combustion, the flow rate of the oxygen injected into the ignition cavity is at least 1/2 times that of the hydrogen, namely the flow rate ratio of the oxygen to the hydrogen is 1:2. In order to allow the hydrogen to burn sufficiently, or to form a thicker oxide film layer, the concentration of oxygen may also be increased appropriately, in some embodiments the flow ratio of oxygen to hydrogen injected into the ignition chamber is (1-3): 2.

preferably, the sizes of the air flow surfaces of the injected oxygen and hydrogen are the same, and the central axes are overlapped, so that the oxygen and the hydrogen are fully and uniformly mixed on the mixing surface, and stable flame is formed.

Because the opposite flow is adopted for ignition, flame is generated only in a small range at the mixing junction of the flow, and even if the flow of hydrogen and oxygen is small, the ignition concentration requirement can be met; if the hydrogen-oxygen flow is large, the ignition concentration requirement can be met when the hydrogen-oxygen concentration is diffused to a proper proportion along with the gas diffusion. Therefore, the flow rate range of the introduced hydrogen and oxygen can be adjusted in a larger range. In some embodiments, the hydrogen and oxygen flow ranges from 0 to 50L/min.

The water vapor generated by the ignition is discharged from the ignition chamber through the exhaust pipe, and after the ignition process is completed, no hydrogen and oxygen are introduced, and a purge gas, such as N, is introduced into the ignition chamber from another pipeline ₂ And purging and discharging the residual steam in the ignition cavity.

According to the ignition method, a large amount of oxygen is not required to be introduced into the ignition cavity in advance to replace gas in the cavity, so that after the ignition is performed to form water vapor, the oxidation gas is mainly water vapor, the oxygen content is controlled, and when the oxidation gas is used as the oxidation gas, the thickness of the formed oxidation film is controlled.

The foregoing embodiments are merely examples of the present application, and are not intended to limit the scope of the patent application, so that all equivalent structures or equivalent processes using the descriptions and the drawings of the present application, such as the combination of technical features of the embodiments, or direct or indirect application to other related technical fields, are included in the scope of the patent protection of the present application.

Claims

1. An ignition device for delivering a reaction gas to a reaction chamber of a semiconductor apparatus, comprising:

an ignition chamber;

the first air inlet pipe is provided with a first air outlet, and the first air outlet is communicated with the ignition cavity and is used for introducing first gas into the ignition cavity;

the second air inlet pipe is provided with a second air outlet, the second air outlet is communicated with the ignition cavity and is used for introducing second air into the ignition cavity, and the first air outlet and the second air outlet are oppositely arranged, so that the first air and the second air introduced into the ignition cavity form a pair of impact air flows, are mixed at an air flow joint surface and are outwards diffused along the joint surface;

the heating element of the heater is arranged at least around the outer walls of the first air inlet pipe and the second air inlet pipe, which are close to one end of the ignition chamber, and is used for heating the first gas and the second gas which are introduced into the ignition chamber to an ignition temperature;

the exhaust pipe is communicated with the ignition chamber and used for conveying reaction gas generated by ignition in the ignition chamber to the reaction chamber;

the ignition chamber is a cylinder and is provided with two circular and opposite bottom surfaces; the first air inlet pipe and the second air inlet pipe are respectively inserted into the ignition cavity from the circle centers of the two opposite bottom surfaces.

2. The ignition device of claim 1 wherein the projections of the first and second air outlets in a plane perpendicular to the direction of air outlet at least partially overlap.

3. The ignition device of claim 1 wherein the distance between the first air outlet and the second air outlet is in the range of 10mm to 100mm.

4. The ignition device of claim 1 wherein said heater further comprises an insulating layer, said insulating layer wrapping around the periphery of said ignition chamber and the periphery of said heating element.

5. The ignition device of claim 1, further comprising: and the detection end of the temperature measuring element is arranged in the ignition cavity and used for detecting the internal temperature of the ignition cavity.

6. The ignition device of claim 5, wherein the sensing end of the temperature sensing element is positioned laterally of the first and/or second air outlets.

7. The ignition device of claim 1, further comprising: and the pipeline heat preservation sleeve is wrapped on the outer wall of the exhaust pipe.

8. The ignition device of claim 1, further comprising: and the cooling device is at least arranged at part of the outer wall of the heater.

9. The ignition device of claim 8, further comprising: the cooling device is positioned at the openings at the two ends of the cavity and is fixedly connected with the fixing plate; the heater is arranged in a cavity surrounded by the fixing plate and the cooling device.

10. The ignition device of claim 9 wherein said cooling means comprises a water cooled plate having a cavity or conduit therein for containing a cooling fluid.

11. The ignition device of claim 9, further comprising: and the flexible heat preservation sleeve is at least used for wrapping the surface of the heater facing the fixed plate and is positioned between the heater and the fixed plate.

12. The ignition device of claim 1, further comprising: and the third air inlet pipe is communicated with the ignition chamber and is used for introducing purge gas into the ignition chamber.

13. A semiconductor device, characterized by comprising:

the ignition device of any one of claims 1 to 12;

a reaction chamber;

and the exhaust pipe of the ignition device is communicated with the reaction chamber and is used for conveying reaction gas generated by ignition in the ignition chamber to the reaction chamber.