CN113091055A - Ignition device and semiconductor device - Google Patents
Ignition device and semiconductor device Download PDFInfo
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- CN113091055A CN113091055A CN202110292130.7A CN202110292130A CN113091055A CN 113091055 A CN113091055 A CN 113091055A CN 202110292130 A CN202110292130 A CN 202110292130A CN 113091055 A CN113091055 A CN 113091055A
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23D—BURNERS
- F23D14/00—Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid
- F23D14/02—Premix gas burners, i.e. in which gaseous fuel is mixed with combustion air upstream of the combustion zone
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23D—BURNERS
- F23D14/00—Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid
- F23D14/46—Details, e.g. noise reduction means
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F23—COMBUSTION APPARATUS; COMBUSTION PROCESSES
- F23D—BURNERS
- F23D14/00—Burners for combustion of a gas, e.g. of a gas stored under pressure as a liquid
- F23D14/46—Details, e.g. noise reduction means
- F23D14/60—Devices for simultaneous control of gas and combustion air
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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Abstract
The application discloses ignition and semiconductor device, ignition includes: an ignition chamber; the first air inlet pipe is provided with a first air outlet, is communicated with the ignition chamber and is used for introducing first air into the ignition chamber; the second air inlet pipe is provided with a second air outlet, is communicated with the ignition chamber and is used for introducing second air into the ignition chamber, and the first air outlet and the second air outlet are arranged oppositely so that the first air and the second air introduced into the ignition chamber form opposite air flow; the heating element of the heater is arranged at least around the outer walls of the first air inlet pipe and the second air inlet pipe close to the partial length of one end of the ignition chamber and is used for heating the first gas and the second gas which are led into the ignition chamber to the ignition temperature; and the exhaust pipe is used for conveying the reaction gas generated by ignition in the ignition chamber to the reaction chamber. The ignition chamber is capable of meeting a wide flow range ignition requirement.
Description
Technical Field
The application relates to the technical field of semiconductors, in particular to an ignition device and a semiconductor device.
Background
In semiconductor thermal processing equipment, the wet oxygen oxidation process has the advantage of a fast film formation rate, and has been widely used by integrated circuit manufacturers. Pure water vapor is an essential reaction gas in a wet oxygen oxidation process, pure hydrogen and oxygen are introduced into an external ignition device according to a certain proportion in a vertical oxidation furnace device, and the hydrogen is violently combusted in the oxygen under the action of an external heater to generate pure high-temperature water vapor to enter a reaction chamber. With the development of the process, different hydrogen and oxygen flow rate ignition requirements are required to be implemented at different stages in the same process, which requires that the external ignition device can meet the requirements of realizing the ignition of different hydrogen and oxygen flow rates within a wider flow rate range.
In the prior art, in order to meet the ignition requirements of different oxyhydrogen flow rates, a plurality of ignition devices suitable for different flow ranges are often required to be configured to meet the oxyhydrogen ignition requirements from small flow to large flow, which causes the problems of long equipment maintenance time, high cost and low process efficiency.
Accordingly, there is a need for an ignition device that can meet the ignition requirements over a wide range of flow rates.
Disclosure of Invention
In view of the above, the present application provides an ignition device, an ignition method thereof and a semiconductor device to meet the ignition requirement in a wide flow rate range.
The application provides an ignition device for delivering reaction gas to a reaction chamber of a semiconductor device, comprising: an ignition chamber; the first air inlet pipe is provided with a first air outlet, and the first air outlet is communicated with the ignition chamber and used for introducing first air into the ignition chamber; the second air inlet pipe is provided with a second air outlet, the second air outlet is communicated with the ignition chamber and is used for introducing second air into the ignition chamber, and the first air outlet and the second air outlet are oppositely arranged so that the first air and the second air introduced into the ignition chamber form opposite air flow; the heating element of the heater is arranged at least around the outer walls of the first air inlet pipe and the second air inlet pipe close to the partial length of one end of the ignition chamber and is used for heating the first gas and the second gas which are led into the ignition chamber to the ignition temperature; and the exhaust pipe is communicated to the ignition chamber and is used for conveying the reaction gas generated by ignition in the ignition chamber to the reaction chamber.
Optionally, projections of the first air outlet and the second air outlet in a plane perpendicular to the air outlet direction at least partially overlap.
Optionally, the distance between the first air outlet and the second air outlet ranges from 10mm to 100 mm. .
Optionally, the ignition chamber is a cylinder having two circular and opposite bottom surfaces; the first gas inlet pipe and the second gas inlet pipe are inserted into the ignition chamber from the centers of the two opposite bottom surfaces respectively.
Optionally, the heater further includes a heat insulating layer, and the heat insulating layer is wrapped around the ignition chamber and the heating element.
Optionally, the method further includes: and the detection end of the temperature measuring element is arranged in the ignition cavity and is used for detecting the internal temperature of the ignition cavity.
Optionally, the detection end of the temperature measuring element of the thermal sensor is arranged beside the first air outlet and/or the second air outlet.
Optionally, the method further includes: and the pipeline heat-insulating sleeve wraps the outer wall of the exhaust pipe.
Optionally, the method further includes: and the cooling device is arranged at least at part of the outer wall of the heater.
Optionally, the method further includes: the cooling device is positioned at the opening parts at the two ends of the cavity and is fixedly connected with the fixing plate; the heater is arranged in a cavity enclosed by the fixing plate and the cooling device.
Optionally, the cooling device includes a water-cooling plate, and a cavity or a pipe for containing a cooling liquid is provided in the water-cooling plate.
Optionally, the method further includes: and the flexible heat insulation sleeve at least wraps the surface of the heater facing the fixing plate and is positioned between the heater and the fixing plate.
Optionally, the method further includes: and the third air inlet pipe is communicated with the ignition cavity and is used for introducing purge gas into the ignition cavity.
The present application also provides a semiconductor device including: an ignition device as claimed in any one of the preceding claims; a reaction chamber; and the exhaust pipe of the ignition device is communicated to the reaction chamber and is used for conveying reaction gas generated by ignition in the ignition chamber to the reaction chamber.
The first gas outlet and the second gas outlet of the ignition device are arranged oppositely, so that introduced first gas and second gas can form opposite air flow. The introduced first gas and the second gas are rapidly contacted, mixed at the gas flow joint surface and diffused outwards along the joint surface. When the concentration ratio of the flame and the gas is proper and the temperature is proper, combustion occurs, and the flame diffuses with the gas and outwards diffuses from the gas flow joint surface to form a circular flame surface positioned at the gas flow joint surface. Because flame is generated only in a small range at the gas flow mixing junction, the ignition concentration requirement can be met even if the flow of introduced gas is small; if the gas flow is large, the concentration at the gas flow mixing interface is too high to be beneficial to ignition, the gas is transversely diffused along the gas junction surface, along with the gas diffusion, after the concentration is diffused to a proper proportion, the ignition concentration requirement can be still met, the gas flow velocity in the diffusion area is reduced, and the flame can not be blown out due to the too high gas flow velocity. Therefore, the ignition device can meet the ignition requirement of a wide flow range.
Furthermore, because the first gas outlet is opposite to the second gas outlet, the first gas can meet the second gas (combustion-supporting gas) during ejection, the concentration of the second gas required by gas combustion can be met, excessive second gas does not need to be introduced to replace the gas in the ignition chamber, and the control of the process parameters of the semiconductor process in which the reaction gas generated after ignition participates is facilitated.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 to 3 are schematic structural views of an ignition device according to an embodiment of the present application;
fig. 4 is a schematic structural diagram of a semiconductor device according to an embodiment of the present application.
Detailed Description
As discussed in the background, existing ignition devices fail to meet the requirements for wide flow range ignition. In the conventional ignition device, hydrogen is introduced into oxygen to burn the hydrogen in the oxygen. Before ignition, firstly, nitrogen, oxygen or other process residual gases, water vapor and the like in the combustion chamber are completely replaced by oxygen, then the oxygen and the hydrogen which are heated to higher temperature are introduced into the combustion chamber, the hydrogen is violently combusted in the combustion chamber filled with the oxygen, and the generated high-temperature water vapor enters the reaction chamber to participate in the oxidation process reaction. In order to ensure stable combustion of hydrogen, the diameter of the hydrogen outlet is usually required to be large so as to reduce the gas outlet speed of hydrogen and avoid the phenomenon that flame is blown out due to too high gas outlet speed. However, when the hydrogen-oxygen ignition is performed at a small flow rate, the hydrogen outlet diameter is large and the hydrogen flow rate is small, so that the concentration of hydrogen is too low and hydrogen cannot be combusted. Thus, prior art ignition devices are unable to meet ignition requirements over a wide flow range.
Further, the inventors have found that, before the combustion of hydrogen, in order to avoid the risk of explosion due to impure gases, a large amount of oxygen is required to replace the nitrogen in the combustion chamber, but this also causes oxygen to be introduced into the reaction chamber, which is not favorable for controlling the thickness of the oxide film formed in the reaction chamber.
Based on the above findings, the inventors have proposed a new ignition device capable of solving the above problems.
The technical solutions in the embodiments of the present application are clearly and completely described below with reference to the accompanying drawings, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application. The following embodiments and their technical features may be combined with each other without conflict.
Fig. 1 is a schematic structural diagram of an ignition device according to an embodiment of the present invention.
In this embodiment, the ignition device includes an ignition chamber 100, a first intake pipe 102, a second intake pipe 103, a heater 200, and an exhaust pipe 105. The ignition device is used for delivering reaction gas to a reaction chamber of the semiconductor equipment.
The first air inlet pipe 102 is communicated with the ignition chamber 100, is provided with a first air outlet, and is used for introducing a first gas into the ignition chamber 100; the second air inlet pipe 103 is communicated with the ignition chamber 100, and has a second air outlet for introducing a second gas into the ignition chamber. The ignition chamber 100, the first air inlet pipe 102 and the second air inlet pipe 101 are made of high-temperature-resistant and corrosion-resistant glass materials.
The first gas and the second gas are gases capable of being combusted, and the first gas and the second gas can be reasonably selected according to combustion reaction products to be generated. The first gas can be combustible gas such as hydrogen, carbon monoxide, methane, ethane, propane, butane, ethylene, propylene, butylene, acetylene, propyne, butyne, hydrogen sulfide, phosphine and the like, and the second gas can be combustion-supporting gas such as oxygen, chlorine, ozone and the like.
In this embodiment, the first gas is hydrogen and the second gas is oxygen, which are used to ignite and burn to generate water vapor commonly used in semiconductor processes.
In this embodiment, the first air outlet of the first air inlet pipe 102 is opposite to the second air outlet of the second air inlet pipe 103, so that the introduced first air and second air can form an opposite air flow. Through rationally setting up the distance between two gas outlets, can make first gas and second gas contact rapidly, mix in air current faying face department to along faying face outdiffusion. The distance between the first air inlet pipe 102 and the second air inlet pipe 103 is required to meet the requirement of forming the opposite air flow, and if the distance between the first air inlet pipe and the second air inlet pipe is too large, the flow speed of the air on the mixing interface of the first air and the second air is too small to form the opposite air flow. When the concentration ratio and the temperature of the two gases are proper, the first gas and the second gas are combusted, and the flame diffuses with the gases and outwards diffuses from the airflow junction surface to form a circular flame surface positioned at the airflow junction surface. In the embodiment, because the first gas outlet and the second gas outlet are opposite, the hydrogen can meet oxygen when being ejected, the oxygen concentration required by hydrogen combustion can be met, and excessive oxygen does not need to be introduced to replace gas in the ignition chamber.
In this embodiment, the first air inlet pipe 102 and the second air inlet pipe 103 are inserted into the ignition chamber 100 to minimize the distance between the first air outlet and the second air outlet. The side walls of the first air inlet pipe 102 and the second air inlet pipe 103 are connected with the chamber wall of the ignition chamber 100 in a sealing manner. Preferably, the side walls of the first air inlet pipe 102 and the second air inlet pipe 103 are welded to the chamber wall of the ignition chamber 100. In other embodiments, the first air inlet pipe 102 and the second air inlet pipe 103 can also be detachably inserted into the ignition chamber 100, and the side walls of the first air inlet pipe 102 and the second air inlet pipe 103 and the chamber wall of the ignition chamber 100 are detachably fixed through a sealing piece, so that the replacement is convenient.
In other embodiments, the first air inlet pipe 102 and the second air inlet pipe 103 do not need to be inserted into the ignition chamber 100, and the first air inlet and the second air inlet are opened on the chamber wall of the ignition chamber 100 as long as the distance between the two air outlets can meet the requirement of forming the opposed air flow.
The exhaust pipe 105 is connected to the ignition chamber 100, and is used for exhausting gas in the ignition chamber 100, particularly exhausting reaction gas formed by burning the first gas and the second gas into a reaction chamber of a required semiconductor device.
The heater 200 at least comprises a heating element, the heating element is at least arranged around the outer wall of the partial length of one end of the first air inlet pipe 102 and the second air inlet pipe 103 close to the ignition chamber 100, and is used for heating the first gas and the second gas which are introduced into the ignition chamber 100 to the ignition temperature. In this embodiment, the ignition temperature of the hydrogen and oxygen is from 400 ° to 1000 °, for example 800 °, at which the hydrogen and oxygen will combust in the appropriate concentration ratio.
In this embodiment, the ignition chamber 100, the first air inlet pipe 102 and the second air inlet pipe 103 are enclosed by the heater 200 when the ignition chamber 100 is closed. The heater 200 comprises a heating element 201 and an insulating layer 202, wherein the heating element 201 is arranged on the tube wall of the first air inlet tube 102 and the tube wall of the second air inlet tube 103 close to the partial length of the ignition chamber 100; the insulating layer 200 is an outer layer structure, and wraps the heated pipe walls of the first air inlet pipe 102 and the second air inlet pipe 103, the heating element 201 and the ignition chamber 100. The insulating layer 202 is used for reducing heat dissipation, collecting heat inside the heater 200 and improving the heating efficiency of the heater 200. Moreover, the insulating layer 202 wraps the whole ignition chamber 100 to ensure that the internal temperature of the ignition chamber 100 meets the ignition requirement, and the phenomenon that the gas cannot be ignited due to excessive temperature drop after the gas is introduced into the ignition chamber is avoided.
In this embodiment, the heating element 201 of the heater 200 is disposed between the walls of the first air inlet pipe 102 and the second air inlet pipe 103 and the insulating layer 202, and the ignition chamber 100 is only wrapped by the insulating layer 202, and the ignition chamber 100 is insulated by the insulating layer 202. In other embodiments, a heating element 201 may be disposed between the chamber wall of the ignition chamber 100 and the insulating layer 202 to heat the interior of the ignition chamber 100.
The first gas and the second gas introduced into the ignition chamber 100 are combusted to generate a reaction gas, and then discharged through the exhaust pipe 105. In this embodiment, the outer wall of the exhaust pipe 105 is further wrapped with a pipeline heat-insulating sleeve 600, and the pipeline heat-insulating sleeve 600 plays a heat-insulating role in high-temperature steam passing through the exhaust pipe 105, so that the phenomenon that the high-temperature steam is liquefied due to excessive cooling and cannot participate in subsequent reactions, thereby affecting process results is avoided.
The ignition device further comprises a cooling device 300 which is at least arranged on part of the outer wall of the heater 200 and used for cooling the surface of the heater 200, preventing the heater 200 from releasing heat to the external environment, ensuring that the environment is in a room temperature state and protecting the safety of other surrounding components. The cooling device 300 adopts a water cooling device, and utilizes a water circulation pipeline to cool the surface of the heater 200. Specifically, the cooling device 300 includes a water-cooling plate, a cavity or a pipe for accommodating a cooling liquid is formed in the water-cooling plate, and the water-cooling plate is disposed close to the surface of the heater 200. In other embodiments, other suitable types of cooling devices may be used, and one skilled in the art may select a suitable cooling device based on the cooling goal of the cooling. The cooling device 300 blocks the heater from dissipating heat to the outside environment more efficiently than the flexible thermal sleeve 400.
The ignition device further comprises a fixing plate 800, the fixing plate 800 encloses a cavity with openings at two ends, and the cooling device 300 is located at the openings at two ends of the cavity and fixedly connected with the fixing plate 800 to form a cavity; the heater 200 is disposed in a cavity defined by the fixing plate 800 and the cooling device 300, and the fixing plate 800 fixes the positions of the cooling device 300 and the heater 200. In this embodiment, the cooling device 300 is disposed on the outer wall of the heater 200 opposite to the side wall of the ignition chamber 100, and since the thickness of the insulating layer 201 of the heater 200 on the side wall of the ignition chamber 100 is small, heat is more easily released, and the cooling device 300 is disposed on the position, so that the cooling effect can be improved.
The ignition device further comprises a flexible heat insulation sleeve 400 at least wrapping the partial surface of the outer wall of the heater 200 and used for insulating the heater 200, effectively preventing heat inside the heater 200 from dissipating to an external space, ensuring heat accumulation inside the heater 200, improving the heating efficiency of the heater 200 and further improving the air outlet temperature of the first air inlet pipe 102 and the second air inlet pipe 103.
The flexible thermal insulation sleeve 400 at least wraps the surface of the heater 200 facing the fixing plate 800 and is positioned between the heater 200 and the fixing plate 800. The flexible heat insulation sleeve 400 has elasticity, can accommodate the processing error of the heater 200, and avoids the fixing plate 800 from cracking the heater 200; in addition, the flexible thermal insulation cover 400 installed between the heater 200 and the cooling device 300 can effectively absorb the size change between the heater 200 and the cooling device 300 caused by the temperature change, and the heater 200 is prevented from being damaged by extrusion cracking. The material of the flexible thermal insulation sleeve 400 can be foam plastic, foam cotton or felt and the like. In this embodiment, the flexible thermal insulation cover 400 covers only the surface of the heater 200 where the cooling device 300 is not disposed. Since the insulating layer 201 covering the first bottom surface 1001 (see fig. 3) and the second bottom surface 1002 (see fig. 3) of the ignition chamber 100 has a large thickness, the temperature drop is small when heat is transferred to the surface of the heater 200, and the control requirement of heat dissipation can be satisfied by using the flexible insulating cover 400.
In other embodiments, a flexible thermal insulation cover 400 and a cooling device 300 may be disposed at each surface of the heater 200, and the flexible thermal insulation cover 400 is disposed between the cooling device 300 and the heater 200.
In this embodiment, the ignition device further includes a purge inlet pipe 104, which is communicated with the ignition chamber 100 and is used for introducing purge gas into the ignition chamber 100. The purge gas may be inert gas such as nitrogen, He, or the like, and is used for introducing the purge gas into the ignition chamber 100 after the ignition process is completed, and purging the residual reaction gas in the ignition chamber 100 into the exhaust pipe 105 for discharge.
The ignition device further comprises a temperature measuring element 500, and the detection end of the temperature measuring element 500 is arranged in the ignition chamber 100 and is used for detecting the internal temperature of the ignition chamber 100. According to the detected temperature, the heating temperature of the heater 200 to the first gas and the second gas is further controlled to ensure that the first gas and the second gas introduced into the ignition chamber 100 reach the combustion temperature, so that the ignition is performed smoothly.
Referring to fig. 2 and fig. 3, a partial structure of an ignition device according to an embodiment of the present invention is shown.
The first gas outlet is opposite to the second gas outlet, and the first gas and the second gas can form circular flame which is diffused to the periphery along the center of the gas mixing junction surface after being ignited. The circular flame is not limited to a perfect circle but includes a perfect circle, an ellipse and other approximate circles due to the factors of the gas being a fluid, the gas flow direction, the diffusion rate and the like. Because the gas concentration is the largest in the center of the gas mixing junction, the gas concentration is smaller towards the periphery, and the thickness of the flame can be reduced from the center to the edge.
In this embodiment, the ignition chamber 200 is a cylinder (see fig. 3) having a first and second bottom surface 1001 and 1002 that are circular and opposite, and have a circular cross-section to match the shape of the flame.
The second air inlet pipe 103 is vertically inserted into the ignition chamber 100 from the first bottom surface 1001, and the first air inlet pipe 102 is vertically inserted into the ignition chamber 100 from the second bottom surface 1002. Preferably, the second air inlet pipe 103 and the first air inlet pipe 102 are respectively inserted into the ignition chamber 100 from the center of the bottom surface, so that the flame generated by ignition is located in the middle of the ignition chamber 100, and the chamber wall of the ignition chamber 100 is prevented from being burned. In this embodiment, since the hydrogen density is lower than the oxygen density, the first gas inlet pipe 102 is disposed at the bottom of the ignition chamber 100, so that the hydrogen gas flows upwards into the ignition chamber 100, and the hydrogen gas has a lower density, is more likely to diffuse upwards, and mixes with the oxygen gas flow above. In other embodiments, the direction of the first gas and the second gas may be switched.
In order to ensure the uniformity of the flame, it is necessary to enable the gas ejected from the first gas inlet pipe 102 and the second gas inlet pipe 103 to be sufficiently contacted and mixed, and the projections of the first gas outlet and the second gas outlet in a plane perpendicular to the gas outlet direction are at least partially overlapped. In this embodiment, the sizes of the apertures of the air outlets of the first air inlet pipe 102 and the second air inlet pipe 103 are the same, the central axes of the first air outlet and the second air outlet are overlapped, the cross sections of the ejected hydrogen airflow and the ejected oxygen airflow have the same size, and the ejected hydrogen airflow and the ejected oxygen airflow are opposite in position, and can be uniformly mixed at each position of the airflow junction surface.
The closer to the air outlet, the greater the flow velocity of the emitted air stream. In the embodiment of the invention, if the distance between the first air outlet and the second air outlet is too small, the impact of the opposite air flow is too violent, the air flow is turbulent, and stable flame cannot be formed; if the first gas and the second gas flow between the first gas outlet and the second gas outlet are not in contact with each other, diffusion occurs, so that the gas concentration on the contact surface is low, and a circular flame surface cannot be formed. In this embodiment, the diameter of the ignition chamber 100 is in the range of 50mm to 300mm, the height is in the range of 20mm to 200mm, and the distance between the air outlets of the first air inlet pipe 102 and the second air inlet pipe 103 is in the range of 10mm to 100 mm.
In this embodiment, the temperature sensing element is mounted to the ignition chamber 100 by a mounting tube 106. The mounting tube 106 is a glass tube, and is inserted into the ignition chamber from the side of the second air inlet tube 103, and the end of the mounting tube 106 inserted into the ignition chamber 200 is closed for placing a temperature measuring element (not shown in the figure). The end of the mounting tube 106 is inserted into the second air outlet close to the second air inlet tube 103, so that the detection end of the temperature measuring element can be located beside the second air outlet of the second air inlet tube 103, and the temperature of the oxygen entering the ignition chamber 100 can be accurately obtained. In other embodiments, the mounting tube 106 may also be disposed beside the first air inlet, or disposed beside the first air outlet and the second air outlet. The temperature measuring element can adopt a thermocouple, the temperature inside the ignition cavity 100 is measured in real time through the temperature measuring element, when the temperature inside the ignition cavity 100 is stabilized at a higher temperature, the first gas and the second gas are introduced, and the phenomenon that hydrogen cannot be combusted due to too low temperature is avoided.
Since combustion occurs only in a small region between the first and second outlet ports, measuring the temperature at the outlet port enables more efficient control of the heating temperature of the heater 200, making it more desirable for ignition, than measuring the temperature at other locations within the ignition chamber 100.
In the ignition device, when the first gas and the second gas are ejected at a small flow rate, the two gases are uniformly mixed in concentration in a small area between the first gas outlet and the second gas outlet and are in a combustible equivalence ratio, and then are ignited and combusted to form thin disc-shaped flame; when the two gases are ejected at a large flow rate, the first gas and the second gas meet and diffuse to the periphery to form a circular gas mixing surface, and when the gas concentration is diffused to the hydrogen-oxygen combustion equivalence ratio, circular flame with a large size can be formed by combustion. In some embodiments, under the condition of consistent outlet aperture, when a large flow rate is emitted, the concentration requires that the flow rate of a gas with a larger concentration is significantly larger than that of another gas, for example, the flow rate of hydrogen is larger than that of oxygen, so that the gas is more easily diffused toward the oxygen, the edge of the flame inclines toward the oxygen, and the flame is overall in a disk shape.
After the diameters of the first air outlet and the second air outlet are determined, the ignition requirements of the first air and the second air from small flow to large flow can be met, the ignition requirements of different flow ranges in the same process can be met, multiple ignition chambers do not need to be configured, the equipment utilization rate can be obviously improved, and the process efficiency can be improved.
Furthermore, because the first gas outlet is opposite to the second gas outlet, the first gas can meet the second gas (combustion-supporting gas) when being ejected, the concentration of the second gas required by gas combustion can be met, excessive second gas does not need to be introduced to replace the gas in the ignition chamber, and the control of the process parameters of the semiconductor process in which the reaction gas generated after ignition participates is facilitated. For example, in the case of oxyhydrogen ignition, it is not necessary to first introduce an excessive amount of oxygen to replace the gas in the combustion chamber, which is advantageous in controlling the thickness of the oxide film generated when water vapor generated by ignition is discharged as the oxidizing gas.
Furthermore, the flame is located in the area between the first air outlet and the second air outlet, so that the air outlet can be effectively prevented from being burnt by the flame, and the safe operation of the ignition chamber is ensured.
Embodiments of the present invention also provide a semiconductor device.
Fig. 4 is a schematic structural diagram of a semiconductor device according to an embodiment of the invention.
In this embodiment, the semiconductor apparatus includes the ignition device described in the above embodiments, and a reaction chamber 700. The exhaust pipe 105 of the ignition device is communicated to the reaction chamber 700, and is used for exhausting the reaction gas generated by the ignition device into the reaction chamber 700.
In this embodiment, the semiconductor device is a vertical oxidation furnace device, the ignition chamber 100 of the ignition device is used for igniting hydrogen and oxygen, and water vapor generated by ignition enters the reaction chamber 700 through the exhaust pipe 105 to participate in oxidation reaction, so as to form an oxide film on the surface of the wafer to be processed.
Because the ignition device does not need to introduce a large amount of oxygen to replace the gas in the ignition chamber before ignition, the oxidizing gas introduced into the reaction chamber 700 after ignition is mainly water vapor, which is beneficial to controlling the thickness of the formed oxide film.
And because the ignition device can meet the ignition of small-flow gas and large-flow gas, the requirements of different process stages in the same process on different proportions of gas ignition can be met, and the requirements of different process stages on film thickness and film forming speed and quality are met, so that the requirement of the whole oxidation reaction process flow can be met only by one ignition device, a plurality of ignition devices are not required, the equipment performance can be improved, the equipment structure is simplified, and the cost is reduced.
In other embodiments, the semiconductor device may be other processing devices that require the introduction of a reaction gas generated by ignition, and is not limited herein.
Embodiments of the present invention also provide a method of igniting an ignition device that includes an ignition chamber.
The ignition method comprises the following steps: and injecting a first gas and a second gas with combustion temperature into the ignition chamber, wherein the injection directions of the first gas and the second gas are opposite to each other, so that the opposite gas flow is formed to be oppositely directed, mixed and diffused, and the circular flame is ignited.
In this embodiment, the first gas is hydrogen, the second gas is oxygen, and the combustion temperature is 400 ° to 1000 ° to meet the temperature requirement of oxyhydrogen combustion. In order to meet the concentration requirement for combustion of hydrogen and oxygen, the flow rate of oxygen injected into the ignition chamber is at least 1/2 times the flow rate of hydrogen, i.e., the ratio of the flow rates of oxygen and hydrogen is 1: 2. In order to ensure that hydrogen is fully combusted or a thicker oxide film layer is formed, the concentration of oxygen can be properly increased, and in some embodiments, the flow ratio of oxygen to hydrogen injected into the ignition chamber is (1-3): 2.
preferably, the sizes of the injected gas flow surfaces of the oxygen and the hydrogen are the same, and the central axes are overlapped, so that the oxygen and the hydrogen are fully and uniformly mixed on the mixing surface, and a stable flame is favorably formed.
Because the opposed airflow is adopted for ignition, flame is generated only in a small range at the mixed junction of the airflow, and the ignition concentration requirement can be met even if the flow of oxyhydrogen is small; if the flow rate of the hydrogen and oxygen is large, along with gas diffusion, when the concentration of the hydrogen and oxygen is diffused to a proper proportion, the ignition concentration requirement can be met. Therefore, the flow ranges of the introduced hydrogen and oxygen can be adjusted in a wide range. In some embodiments, the flow rate of the hydrogen and the oxygen is in the range of 0 to 50L/min.
The water vapor generated by ignition is discharged out of the ignition chamber through an exhaust pipe, and after the ignition process is finished, no hydrogen or oxygen is introduced, and a purging gas such as N is introduced into the ignition chamber from another pipeline2And purging residual water vapor in the ignition chamber.
According to the ignition method, a large amount of oxygen does not need to be introduced into the ignition cavity in advance to replace gas in the cavity, so that after the ignition is carried out to form water vapor, the oxidizing gas is mainly the water vapor, the oxygen content is favorably controlled, and when the oxidizing gas is used as the oxidizing gas, the thickness of the formed oxide film is favorably controlled.
The above-mentioned embodiments are only examples of the present application, and not intended to limit the scope of the present application, and all equivalent structures or equivalent flow transformations made by the contents of the specification and the drawings, such as the combination of technical features between the embodiments and the direct or indirect application to other related technical fields, are also included in the scope of the present application.
Claims (14)
1. An ignition device for supplying a reactant gas to a reaction chamber of a semiconductor apparatus, comprising:
an ignition chamber;
the first air inlet pipe is provided with a first air outlet, and the first air outlet is communicated with the ignition chamber and used for introducing first air into the ignition chamber;
the second air inlet pipe is provided with a second air outlet, the second air outlet is communicated with the ignition chamber and is used for introducing second air into the ignition chamber, and the first air outlet and the second air outlet are oppositely arranged so that the first air and the second air introduced into the ignition chamber form opposite air flow;
the heating element of the heater is arranged at least around the outer walls of the first air inlet pipe and the second air inlet pipe close to the partial length of one end of the ignition chamber and is used for heating the first gas and the second gas which are led into the ignition chamber to the ignition temperature;
and the exhaust pipe is communicated to the ignition chamber and is used for conveying the reaction gas generated by ignition in the ignition chamber to the reaction chamber.
2. The ignition device of claim 1, wherein projections of the first air outlet and the second air outlet in a plane perpendicular to the air outlet direction at least partially overlap.
3. The ignition device of claim 1, wherein the distance between the first outlet port and the second outlet port is in the range of 10mm to 100 mm.
4. The ignition device of claim 1 wherein said ignition chamber is cylindrical having two circular and opposing bottom surfaces; the first gas inlet pipe and the second gas inlet pipe are inserted into the ignition chamber from the centers of the two opposite bottom surfaces respectively.
5. The ignition device of claim 1, wherein the heater further comprises an insulating layer, and the insulating layer wraps the periphery of the ignition chamber and the periphery of the heating element.
6. The ignition device of claim 1, further comprising: and the detection end of the temperature measuring element is arranged in the ignition cavity and is used for detecting the internal temperature of the ignition cavity.
7. The ignition device of claim 6, wherein the sensing end of the thermal sensor temperature element is disposed beside the first and/or second outlet port.
8. The ignition device of claim 1, further comprising: and the pipeline heat-insulating sleeve wraps the outer wall of the exhaust pipe.
9. The ignition device of claim 1, further comprising: and the cooling device is arranged at least at part of the outer wall of the heater.
10. The ignition device of claim 9, further comprising: the cooling device is positioned at the opening parts at the two ends of the cavity and is fixedly connected with the fixing plate; the heater is arranged in a cavity enclosed by the fixing plate and the cooling device.
11. The ignition device of claim 10, wherein the cooling means comprises a water cooled plate having a cavity or conduit therein for receiving a cooling fluid.
12. The ignition device of claim 10, further comprising: and the flexible heat insulation sleeve at least wraps the surface of the heater facing the fixing plate and is positioned between the heater and the fixing plate.
13. The ignition device of claim 1, further comprising: and the third air inlet pipe is communicated with the ignition cavity and is used for introducing purge gas into the ignition cavity.
14. A semiconductor device, comprising:
the ignition device according to any one of claims 1 to 13;
a reaction chamber;
and the exhaust pipe of the ignition device is communicated to the reaction chamber and is used for conveying reaction gas generated by ignition in the ignition chamber to the reaction chamber.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110292130.7A CN113091055B (en) | 2021-03-18 | 2021-03-18 | Ignition device and semiconductor device |
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| CN202110292130.7A CN113091055B (en) | 2021-03-18 | 2021-03-18 | Ignition device and semiconductor device |
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| CN113091055B CN113091055B (en) | 2023-06-16 |
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| CN113091055B (en) | 2023-06-16 |
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