KR100593487B1 - A nitrogen gas keeping warmth / heater for exhaust gas purge of semiconductor and LCD production equipment - Google Patents

A nitrogen gas keeping warmth / heater for exhaust gas purge of semiconductor and LCD production equipment Download PDF

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KR100593487B1
KR100593487B1 KR1020040108494A KR20040108494A KR100593487B1 KR 100593487 B1 KR100593487 B1 KR 100593487B1 KR 1020040108494 A KR1020040108494 A KR 1020040108494A KR 20040108494 A KR20040108494 A KR 20040108494A KR 100593487 B1 KR100593487 B1 KR 100593487B1
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nitrogen gas
gas
lcd
heating
semiconductor
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KR20050071342A (en
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이준상
신혜련
이일영
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이준상
신혜련
이일영
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67098Apparatus for thermal treatment

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Abstract

본 발명은 반도체 및 엘씨디(LCD)생산 설비용 장비의 배기(Exhaust) 배관부의 배출관에 공급되어 배출가스의 퍼지(Purge)용으로 사용되어지는 엘씨디(LCD)생산 설비용 장비에 배관부의 보온/가열과 퍼지용 질소가스(N2 Gas)의 보온/가열에 관한 것이다.The present invention is supplied to the exhaust pipe of the exhaust pipe of the equipment for semiconductor and LCD production equipment, the thermal insulation / heating of the pipe in the equipment for LCD production equipment that is used for purging the exhaust gas It relates to the heat insulation / heating of the nitrogen gas for purging (N 2 Gas).

본 발명은 질소가스(N2 Gas)를 생산 현장에 배관되어 있는 고온의 증기(Steam)를 이용하여 보온/가열시켜, 질소가스의 보온/가열에 따른 안정성을 확보할 수 있는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스 퍼지(Purge)용 질소가스 보온/가열장치를 제공하는데 있다.The present invention is a semiconductor and LCD (LCD) that can ensure the stability of the nitrogen gas (N 2 Gas) by keeping the heat / heating by using a high temperature steam (Steam) piped to the production site, It is to provide nitrogen gas insulation / heating device for purge of exhaust gas of production equipment.

질소가스탱크, 공압을 이용한 흡배기장치, 난방공급배관, 질소가스공급배관, 온도감지센서, 체크밸브Nitrogen gas tank, pneumatic intake and exhaust system, heating supply piping, nitrogen gas supply piping, temperature sensor, check valve

Description

반도체 및 엘씨디 생산 장비의 배출가스 퍼지용 질소가스 보온/가열장치{A nitrogen gas keeping warmth / heater for exhaust gas purge of semiconductor and LCD production equipment}Nitrogen gas keeping warmer / heater for exhaust gas purge of semiconductor and LCD production equipment

도1은 종래 반도체 및 엘씨디(LCD) 생산 설비의 가스배출관에 공급되는 질소가스(N2 Gas)를 보온/가열하는 상태를 보인 예시도.Figure 1 is an exemplary view showing a state of heating / heating the nitrogen gas (N 2 Gas) supplied to the gas discharge pipe of the conventional semiconductor and LCD (LCD) production facilities.

도2는 본 발명에 따른 반도체 및 엘씨디(LCD) 생산 설비의 가스배출관에 공급되는 질소가스(N2 Gas)를 보온/가열하는 상태를 보인 예시도.Figure 2 is an exemplary view showing a state of heating / heating the nitrogen gas (N 2 Gas) supplied to the gas discharge pipe of the semiconductor and LCD (LCD) production facilities according to the present invention.

도3은 본 발명의 요부를 발췌한 부분 단면 구성도.Figure 3 is a partial cross-sectional configuration of the main portion of the present invention.

도4는 도3의 다른 실시 예시도.4 is another exemplary embodiment of FIG.

도5는 본 발명에 따른 보온/가열장치의 다른 실시 예시도.Figure 5 is another exemplary embodiment of a heat / heating apparatus according to the present invention.

도6은 본 발명에 따른 보온/가열장치의 또 다른 실시 예시도.Figure 6 is yet another embodiment of the thermal insulation / heating apparatus according to the present invention.

※도면의 주요 부분에 대한 부호의 설명※※ Explanation of code for main part of drawing ※

10 : 배출관 100 : 반도체 및 엘씨디(LCD) 생산설비10: discharge pipe 100: semiconductor and LCD (LCD) production equipment

200 : 질소가스탱크 300 : 공압을 이용한 흡배기장치 200: nitrogen gas tank 300: intake and exhaust device using pneumatic

400 : 난방공급배관 500 : 질소가스공급배관400: heating supply pipe 500: nitrogen gas supply pipe

501 : 온도감지센서 600 : 체크밸브501: temperature sensor 600: check valve

700 : 난방탱크 800 : 몸체700: heating tank 800: body

801 : 증기주입구 802 : 증기배출구801 steam inlet 802 steam outlet

803 : 양측벽 804 : 질소가스이송관803: side walls 804: nitrogen gas transfer pipe

805 : 캡 806 : 격벽 805: cap 806: bulkhead

807 : 질소가스주입구 808 : 질소가스배출구807: nitrogen gas inlet 808: nitrogen gas outlet

809 : 챔버809: Chamber

본 발명은 반도체 및 엘씨디(LCD)생산 설비용 장비의 배기(Exhaust) 배관부의 배출관에 공급되어 배출가스의 퍼지(Purge)용으로 사용되어지는 반도체 및 엘씨디(LCD)생산 설비용 장비에 배관부의 보온/가열과 퍼지용 질소가스(N2 Gas)의 보온/가열에 관한 것이다.The present invention is supplied to the exhaust pipe of the exhaust pipe of the equipment for semiconductor and LCD production equipment, the insulation of the pipe in the equipment for semiconductor and LCD production equipment that is used for purging the exhaust gas / relates to thermal insulation / heating of the heating and purging with nitrogen gas (N 2 gas) for.

일반적으로 반도체 및 엘씨디(LCD) 생산 현장에서 생산 설비의 배관부에 실란(SILANE, SiH4)등의 배출증기(Vapor)로부터 화재 및 폭발 방지와 파우더(Powder)가 형성되어 배관부에 점착, 막히는 것을 방지하기 위하여 불활성 기체인 질소가스로 퍼지(Purge: 미연소 가스가 노속에 또는 기타 장소에 차 있으면 점화를 했을 때 폭발할 우려가 있으므로 점화 전에 이것을 노 밖으로 빼내기 위하여 환기하는 것)를 하고 있었으나, 질소가스를 이용한 퍼지 또한 배출가스의 온도 강하에 따른 실 란(SILANE, SiH4 : 수소화물)의 파우더화를 막지 못하므로 온도 강하에 따른 실란의 파우더화를 방지하기 위함으로 질소가스를 전열발열기(전기Heater)를 이용하여 질소가스를 가열하여 퍼지용으로 공급하거나 전열보온장치(히터 자켓 : HEATER JACKET)를 이용하여 배관부를 감싸 배출되는 잔류 실란등으로부터 파우더가 형성되지 못하도록 적정온도를 유지 스크러버(Scrubber : 파형을 겹친 것으로, 그 사이로 증기를 흐르게 하여 증기 속의 수분을 제거하거나, 대기 오염물이 섞인 가스등을 세척하여 가스속의 오염물을 물에 흡수 분리하는 장치)까지 배출시키고 있다.In general, in the semiconductor and LCD production site, fire and explosion prevention and powder are formed from exhaust vapor such as silane (SILANE, SiH 4 ) in the piping of the production facility, and the powder is adhered to the piping. In order to prevent this from happening, purge with inert gas (nitrogen gas) was carried out in order to explode when ignited if the unburned gas is in the furnace or other places, so to vent it out of the furnace before ignition. The purge using nitrogen gas also prevents the silane (SILANE, SiH 4: hydride) powdering due to the temperature drop of the exhaust gas. Nitrogen gas is heated by using an electric heater and supplied for purging, or it is discharged by wrapping the pipe part using an electric heat insulating device (heater jacket: HEATER JACKET). Maintain proper temperature to prevent powder from remaining silane, etc. Scrubber (Scrubber), which overlaps the corrugation, and removes water in the steam by flowing steam therebetween, or washes gas mixed with air pollutants to absorb the pollutants in the gas into water. Device to separate).

반도체 및 엘씨디(LCD) 웨이퍼 일괄 가공 공정(FAB : Fabrication)의 화학기상 증착법인 저온증착, 식각, 박막공정에 사용되어지는 설비에서 여러가지 가스를 사용하여 생산 프로세스를 수행할시 여기에서 배출되는 화학 생성물의 성분 중에 파우더 형태나 액체성 물질들이 2차 반응으로 위험한 물질로 재결합 되는 것을 방지하고, 자연발화 및 폭발의 위험을 방지하여 배출 배관이나 밸브, 펌프 등의 막힘 현상 및 동작 불량을 방지하기 위하여 질소가스를 전열기를 이용 고온의 질소가스로 가열시켜 사용하거나 히팅자켓을 이용, 배출부의 배출관을 전열기히터로 감싸 온도를 따뜻하게 하는 형식을 채택하고 있다.Chemical products emitted during the production process using various gases in facilities used for low temperature deposition, etching and thin film processes, which are chemical vapor deposition methods for semiconductor and LCD wafer fabrication (FAB) fabrication processes In order to prevent powder or liquid substances from being recombined into dangerous substances by secondary reaction and prevent the risk of spontaneous ignition and explosion, it is possible to prevent clogging and malfunction of discharge pipe, valve, pump, etc. The gas is heated with high temperature nitrogen gas using a heater or the heating jacket is used to cover the discharge pipe of the outlet with a heater heater to warm the temperature.

전기발열기(전기히터)로 질소가스를 가열 공급하는 방식이나 전기보온장치(2)로 배관부를 보온하여 실란(SILANE, SiH4 )등의 파우더화를 방지하는 장치들은 과다한 전력낭비를 가져와 생산원가의 상승은 물론 전기히터(1)의 과열로 인한 화재발생의 우려와, 정비 및 관리상의 어려움이 있고, 전기를 사용함으로써 전기적인 제반 위험성(쇼트, 폭발 등)을 내포하고 있는 단점을 가지고 있다.Devices that prevent the powdering of silanes (SILANE, SiH 4 ) by heating and supplying nitrogen gas with an electric heater (electric heater) or by insulating the pipes with an electric heat insulator (2) bring excessive waste of production cost. Of course, there is a risk of fire due to overheating of the electric heater 1, and difficulty in maintenance and management, and it has a disadvantage of including electrical risks (short, explosion, etc.) by using electricity.

본 발명은 상기와 같은 제반 문제점을 해결하기 위하여 안출한 것으로, 반도체 및 엘씨디(LCD)생산 장비의 배기(Exhaust) 배관부의 배출관에 공급되는 질소가스(N2 Gas)를 반도체 및 엘씨디(LCD) 생산 현장에 배관되어 있는 고온 증기(Steam)를 이용하여 가열시키므로써, 전기를 사용하였을 때 발생할 수 있는 전기적 제반 위험성(Short, 폭발)으로부터 벗어날 수 있음은 물론, 전열기(전기히터)의 과열로 인한 화재발생을 방지할 수 있고, 관리 유지비의 절감효과를 얻을 수 있는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스 퍼지(Purge)용 질소가스 보온/가열장치를 제공하는데 그 목적이 있다.The present invention has been made to solve the above problems, the production of semiconductor and LCD (N 2 Gas) supplied to the discharge pipe of the exhaust pipe of the semiconductor and LCD (LCD) production equipment By heating by using high temperature steam piped on site, it is possible to escape from electrical shorts (explosion) that may occur when electricity is used, as well as fire due to overheating of electric heater (electric heater). It is an object of the present invention to provide a nitrogen gas insulation / heater for purging exhaust gases of semiconductor and LCD (LCD) production equipment which can prevent the occurrence and reduce the maintenance and maintenance costs.

상기 목적을 달성하기 위한 본 발명의 구성은, 반도체 및 엘씨디(LCD) 생산 설비(100)에서 발생된 배출가스가 배출관(10) 내부에 침착되지 않게 하는 퍼지(Purge)용 질소가스(N2 Gas)를 보온/가열시키는 장치에 있어서,The configuration of the present invention for achieving the above object, the nitrogen gas for purging (Purge) to prevent the exhaust gas generated in the semiconductor and LCD (LCD) production facility 100 is not deposited in the discharge pipe 10 (N 2 Gas) In the device to heat / heat)

반도체 및 엘씨디(LCD) 생산 설비(100)의 배기부 배출관(10)에 연장 설치된 공압을 이용한 흡배기장치(300)에 연결된 질소가스공급배관(500) 상에 질소가스(N2 Gas)탱크(200)가 설치되어 있고, 상기 질소가스(N2 Gas)탱크(200) 내부에는 공장내에 배관되어 난방용 고온증기(Steam)가 순환되는 난방공급배관(400)이 위치하여 있 으며, 상기 난방공급배관(400)에서 발생되는 열에 의해 질소가스(N2 Gas)탱크(200)내의 질소가스(N2 Gas)가 보온/가열되어질 수 있도록 한 것을 특징으로 한다.Nitrogen gas (N 2 Gas) tank 200 on the nitrogen gas supply pipe 500 connected to the intake and exhaust device 300 using the pneumatic pressure installed in the exhaust pipe 10 of the semiconductor and LCD production equipment 100 ) Is installed, inside the nitrogen gas (N 2 Gas) tank 200 is a heating supply pipe 400 is circulated in the factory and hot steam for heating is circulated, the heating supply pipe ( 400) nitrogen gas (N 2 gas) in the column, nitrogen gas (N 2 gas) tank 200 by being generated in a characterized in that one to be thermal insulation / heating.

본 발명에 따른 질소가스(N2 Gas)탱크(200) 내부에 위치하는 난방공급배관Heating supply pipe located inside the nitrogen gas (N 2 Gas) tank 200 according to the present invention

(400)을 스프링 형태로서 질소가스(N2 Gas)가 접촉되어질 수 있는 면을 증대 시킨 것을 특징으로 한다.As a spring form (400) is characterized in that to increase the surface that can be contacted with nitrogen gas (N 2 Gas).

본 발명에 따른 질소가스(N2 Gas)탱크(200) 내부에 위치한 난방공급배관Heating supply pipe located inside the nitrogen gas (N 2 Gas) tank 200 according to the present invention

(400)으로 공급되는 고온증기는 질소가스공급배관(500)에 설치된 온도감지센서The high temperature steam supplied to the 400 is a temperature sensor installed in the nitrogen gas supply pipe (500)

(501)에 의해 감지된 신호에 따라 조절되는 체크밸브(600)에 의해 고온증기의 공급량이 조정되면서 질소가스 및 배출가스의 가열/보온이 이루어지는 것을 특징으로 한다.The supply of hot steam is adjusted by the check valve 600 which is adjusted according to the signal sensed by 501, so that the heating / heating of the nitrogen gas and the exhaust gas is performed.

본 발명에 따른 상기 반도체 및 엘씨디(LCD) 생산 설비(100)의 배기부 배출관(10)에 연장 설치된 공압을 이용한 흡배기장치(300)에 연결된 질소가스공급배관Nitrogen gas supply pipe connected to the intake and exhaust device 300 using pneumatic pressure, which is installed in the exhaust pipe discharge pipe 10 of the semiconductor and LCD (LCD) production facility 100 according to the present invention

(500)이 공장내에 배관되어 난방용 고온증기(Steam)가 순환되는 난방공급배관(400) 상에 설치된 난방탱크(700)를 통과하도록 설치되어 있고, 난방탱크(700)로 순환되는 고온증기에 의하여 질소가스공급배관(500)내의 질소가스(N2 Gas)가 보온/가열되어질 수 있도록 한 것을 특징으로 한다.500 is installed in the factory to pass through the heating tank 700 installed on the heating supply pipe 400 in which the heating steam is circulated, and the high temperature steam circulated to the heating tank 700 Nitrogen gas (N 2 Gas) in the nitrogen gas supply pipe 500 is characterized in that it can be kept warm / heated.

본 발명에 따른 질소가스 보온/가열장치는, 관형인 몸체(800) 일측으로 고온증기가 주입되는 증기주입구(801)와 타측으로 증기배출구(802)가 형성되어 있고, 내부에 양측벽(803)을 관통하는 질소가스이송관(804)이 상,하로 분할 설치되어 있으며, 증기주입구(801)가 위치하는 쪽 측면에 질소가스가 순환되어질 수 있게 공간을 가지는 캡(805)이 설치되어 있고, 증기배출구(802)가 위치하는 쪽에는 내부가 격벽(806)에 의해 분리되어 하부에는 질소가스주입구(807)와 상부에 질소가스배출구(808)를 갖는 쳄버(809)가 설치되어 있는 것을 특징으로 한다.Nitrogen gas thermal insulation / heating device according to the present invention, the steam inlet 801 and the other side of the steam inlet 801 is a high temperature steam is injected into one side of the tubular body 800, the other side wall 803 Nitrogen gas transfer pipe 804 penetrating the upper and lower portions are provided, the cap 805 having a space for circulating nitrogen gas is installed on the side side where the steam inlet 801 is located, the steam outlet The interior of the chamber 802 is separated by a partition wall 806, and a chamber 809 having a nitrogen gas inlet 807 and a nitrogen gas outlet 808 in the upper portion is provided.

본 발명에 따른 상기 질소가스탱크(200)에는 가스배출관(10)에 설치된 다수의 공압을 이용한 흡배기장치(300)에 연결되는 질소가스공급배관(500)이 분관되어있는 것을 특징으로 한다.The nitrogen gas tank 200 according to the present invention is characterized in that the nitrogen gas supply pipe 500 is connected to the intake and exhaust device 300 using a plurality of pneumatic pressure installed in the gas discharge pipe (10).

이하 본발명의 바람직한 실시예를 명세서에 첨부된 도면을 참조하여 보다 상세하게 설명한다.Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

도2는 본 발명에 따른 반도체 및 엘씨디(LCD) 생산 설비의 가스배출관에 공급되는 질소가스(N2 Gas)를 보온/가열하는 상태를 보인 예시도이고, 도3은 본 발명의 요부를 발췌한 부분 단면 구성도이다.Figure 2 is an exemplary view showing a state of keeping / heating the nitrogen gas (N 2 Gas) supplied to the gas discharge pipe of the semiconductor and LCD (LCD) production equipment according to the present invention, Figure 3 is an extract of the main portion of the present invention Partial cross section configuration diagram.

도2와 도3에서와 같이 반도체 및 엘씨디(LCD) 생산 장비의 배출관(10)을 따라 배출되는 배출가스에 질소가스공급배관(500)을 따라 이송하는 질소가스(N2 Gas)가 공압을 이용한 흡배기장치(300)를 통해 공급되어 퍼지(Purge)용 즉, 미연소된 배기가스가 노속에 또는 기타 장소에 차여서 노 밖으로 빼져나지 못하는 현상을 방지 시킴과 동시에 점화 했을때 폭발하는 것을 방지시키게 된다.As shown in FIGS. 2 and 3, nitrogen gas (N 2 Gas) transported along the nitrogen gas supply pipe 500 to the exhaust gas discharged along the discharge pipe 10 of the semiconductor and LCD production equipment uses pneumatic pressure. It is supplied through the intake and exhaust device 300 to prevent the phenomenon that the uncombusted exhaust gas, that is, the unburned exhaust gas in the furnace or other places to be taken out of the furnace and at the same time prevents explosion when ignited.

상기와 같이 퍼지(Purge)용으로 사용되어지는 질소가스(N2 Gas)는 100∼130 ℃내외에서 보온/가열되어진 상태로 공급되어지게 되고, 질소가스(N2 Gas)가 보온/가열 공급되는 이유는 배출가스의 온도가 저하될 경우 배출관(10) 내부에 발생할 수 있는 잔류 실란등으로부터 파우더가 형성되어지기 때문에 이를 방지하기 위함이다.Nitrogen gas (N 2 Gas) used for purge as described above is supplied in a state of being kept warm / heated at around 100 ~ 130 ℃, nitrogen gas (N 2 Gas) is supplied to the heat / heated The reason is to prevent this because the powder is formed from the residual silane that may occur in the discharge pipe 10 when the temperature of the exhaust gas is lowered.

상기와 같이 보온/가열되는 질소가스(N2 Gas)는, 질소가스탱크(200) 내부로 위치하여서 공장내에 배관된 난방용 고온증기(Steam)가 순환되는 난방공급배관Nitrogen gas (N 2 Gas) to be maintained / heated as described above is located inside the nitrogen gas tank 200, the heating supply pipe circulating the heating steam steam piped in the factory

(400)에 의하여 보온/가열되어 진다.400 is kept warm / heated.

난방공급배관(400)에 의하여 보온/가열되어진 질소가스탱크(200)내의 질소가스는 배출관(10)에 나란하게 설치된 공압을 이용한 흡배기장치(300)를 통해 공급되어 진다.Nitrogen gas in the nitrogen gas tank 200 that is kept warm / heated by the heating supply pipe 400 is supplied through the intake and exhaust device 300 using pneumatic pressure installed in parallel with the discharge pipe 10.

상기와 같이 배출관(10)으로 공급되는 질소가스의 보온/가열 온도는 100∼130℃가 적정하고, 질소가스의 보온/가열온도의 조정은 난방공급배관(400)내로 순환되는 고온증기의 공급량에 의해 정해지게 된다.As described above, the thermal insulation / heating temperature of the nitrogen gas supplied to the discharge pipe 10 is suitably 100 to 130 ° C., and the adjustment of the thermal insulation / heating temperature of the nitrogen gas is based on the supply amount of the hot steam circulated into the heating supply pipe 400. It is decided by.

고온증기의 공급량 조정은 질소가스공급배관(500)에 설치된 온도감지센서(501)가 질소가스의 온도를 감지하게 되고, 온도감지센서(501)에 감지된 신호에 의해 난방공급배관(400)에 설치된 체크밸브(600)가 조절되면서, 고온증기의 공급량이 조절된다.The supply of hot steam is adjusted by the temperature sensor 501 installed in the nitrogen gas supply pipe 500 to detect the temperature of the nitrogen gas, and to the heating supply pipe 400 by a signal detected by the temperature sensor 501. While the installed check valve 600 is adjusted, the supply amount of hot steam is controlled.

난방공급배관(400)으로 이송되는 고온증기에 의해 보온/가열된 질소가스가 배출관(10)에 설치된 공압을 이용한 흡배기장치(300)에 배출동력으로 공급되어짐으 로써 고온의 질소가스가 배출가스와 혼합,공급되어 짐으로써, 배출증기로부터 화재 및 폭발 방지와 파우더가 형성되어 배관부에 점착되어 막히는 것을 방지하게 된다.Nitrogen gas, which is kept warm / heated by the high temperature steam transferred to the heating supply pipe 400, is supplied to the intake and exhaust device 300 using the pneumatic pressure installed in the discharge pipe 10, and the high temperature nitrogen gas is discharged from the exhaust gas. By being mixed and supplied, fire and explosion prevention and powder are formed from the exhaust steam to prevent clogging due to adhesion to the pipe.

도4는 배출관(100)에 다수의 공압을 이용한 흡배기장치(300)가 설치되어 있을때 다수의 질소가스공급배관(500)을 도4에서와 같이 분관시켜서 질소가스를 공급할 수 있도록 한 것이다.Figure 4 is when the intake and exhaust device 300 using a plurality of pneumatic pressure in the discharge pipe 100 is a plurality of nitrogen gas supply pipe 500 as shown in Figure 4 so as to supply the nitrogen gas.

도5는 질소가스와 고온증기가 반대로 흐르는 것으로써, 고온증기가 공급되는 난방탱크(700)에 열 접촉 효율을 높일 수 있도록 스프링 형태로 권회된 질소가스공급배관(500)을 통과시켜 난방탱크(700)로 공급되는 고온증기에 의하여 질소가스(N2 Gas)가 보온/가열되어지게 한 것이다.5 shows that the nitrogen gas and the high temperature steam flows in reverse, and passes through the nitrogen gas supply pipe 500 wound in a spring form so as to increase the thermal contact efficiency to the heating tank 700 to which the high temperature steam is supplied. Nitrogen gas (N 2 Gas) is to be kept warm / heated by the high temperature steam supplied to 700).

도6은 다른 형태의 보온/가열장치로써, 몸체(800) 내부에 증기주입구(801)를 통해 고온증기가 유입되어 증기배출구(802)를 통해 배출되어 고온증기가 순환된다.Figure 6 is another type of thermal insulation / heating device, the hot steam is introduced through the steam inlet 801 inside the body 800 is discharged through the steam outlet 802 is circulated hot steam.

상기와 같이 몸체(800) 내부로 순환되는 고온증기는 몸체(800) 내부에 위치할 수 있도록 양단이 양측벽(803)에 관통하도록 질소가스이송관(804)의 질소가스를 보온/가열하게 되는데, 상기 질소가스는 격벽(806)을 가지는 쳄버(809) 하부의 질소가스주입구(807)을 통해 유입되어서 몸체(800)를 관통하도록 설치된 질소가스이송관(804)중 몸체(800) 하부(쳄버의 격벽을 기준으로 함)로 위치한 이송관을 통해 이송하여서 쳄버(809)와 반대되는 쪽으로 설치된 캡(805)으로 이송하게 된다.As described above, the high temperature steam circulated into the body 800 heats / heats the nitrogen gas of the nitrogen gas transfer pipe 804 so that both ends penetrate both side walls 803 so as to be located inside the body 800. The nitrogen gas flows through the nitrogen gas inlet 807 under the chamber 809 having the partition wall 806 and penetrates the body 800 through the lower portion of the body 800 in the nitrogen gas transfer pipe 804. It is transferred to the cap 805 installed on the opposite side to the chamber 809 by the transfer through the transfer pipe located in the).

캡(805)으로 이송된 질소가스는 몸체(800)의 상부로 위치한 질소가스이송관Nitrogen gas transferred to the cap 805 is a nitrogen gas transfer pipe located above the body 800

(804)을 따라 이송하여 쳄버(809)의 상부에 설치된 질소가스배출구(808)를 통해 배 출되어진다.It is transported along 804 and is discharged through the nitrogen gas outlet 808 installed at the top of the chamber 809.

상기와 같이 질소가스가 배출되어지는 질소가스배출구(808)는 배출관(10)에 설치된 공압을 이용한 흡배기장치(300)에 관(도시하지 않았음)으로 연결되어져 있어 보온/가열된 질소가스를 배출관(10)으로 공급하게 된다.Nitrogen gas discharge port 808 through which nitrogen gas is discharged as described above is connected to an intake / exhaust device 300 using pneumatic pressure installed in the discharge pipe 10 to a pipe (not shown) to discharge the heated / heated nitrogen gas discharge pipe. Supply to (10).

상기된 바와 같이 본 발명은, As described above, the present invention,

첫째, 전기를 사용하였을 때 발생할 수 있는 전기적 제반 위험성(Short, 폭발)으로부터 벗어날 수 있고;First, it can escape the electrical risk (Short) that can occur when using electricity;

둘째, 전열기(전기히터)의 과열로 인한 화재발생을 방지할 수 있고, 관리 유지비의 절감효과를 얻을 수 있는 매우 유용한 발명인 것이다.Second, it is a very useful invention that can prevent the occurrence of fire due to overheating of the electric heater (electric heater), and can obtain the effect of reducing maintenance costs.

Claims (6)

반도체 및 엘씨디(LCD) 생산 설비(100)에서 발생된 배출가스가 배출관(10) 내부에 침착되지 않게 하는 퍼지(Purge)용 질소가스(N2 Gas)를 보온/가열시키는 장치에 있어서, In the device for insulating / heating the nitrogen gas (N 2 Gas) for purge so that the exhaust gas generated in the semiconductor and LCD (LCD) production facility 100 is not deposited inside the discharge pipe 10, 반도체 및 엘씨디(LCD) 생산 설비(100)의 배기부 배출관(10)에 연장 설치된 공압을 이용한 흡배기장치(300)에 연결된 질소가스공급배관(500) 상에 질소가스(N2 Gas)탱크(200)가 설치되어 있고, 상기 질소가스(N2 Gas)탱크(200) 내부에는 공장내에 배관되어 난방용 고온증기(Steam)가 순환되는 난방공급배관(400)이 위치하여 있으며, 상기 난방공급배관(400)에서 발생되는 열에 의해 질소가스(N2 Gas)탱크(200)내의 질소가스(N2 Gas)가 보온/가열되어질 수 있도록 한 것을 특징으로 하는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스 퍼지(Purge)용 질소가스 보온/가열장치.Nitrogen gas (N 2 Gas) tank 200 on the nitrogen gas supply pipe 500 connected to the intake and exhaust device 300 using the pneumatic pressure installed in the exhaust pipe 10 of the semiconductor and LCD production equipment 100 ) are present and installed, the nitrogen gas (N 2 gas) tank 200 inside the pipe in the factory and the heating temperature steam (steam) heating the supply pipe 400, the position where the circulation, the heat supply pipe (400 Emission gas purge of semiconductor and LCD production equipment, characterized in that the nitrogen gas (N 2 Gas) in the nitrogen gas (N 2 Gas) tank 200 can be kept warm / heated by the heat generated in the Nitrogen gas insulation / heating device for Purge). 제1항에 있어서, 상기 질소가스(N2 Gas)탱크(200) 내부에 위치하는 난방공급배관(400)을 스프링 형태로서 질소가스(N2 Gas)가 접촉되어질 수 있는 면을 증대 시킨 것을 특징으로 하는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스 퍼지(Purge)용 질소가스 보온/가열장치.According to claim 1, wherein the heating supply pipe 400 located in the nitrogen gas (N 2 Gas) tank 200 in the form of a spring to increase the surface to which the nitrogen gas (N 2 Gas) can be contacted. Nitrogen gas insulation / heater for purge exhaust gas of semiconductor and LCD production equipment. 제1항에 있어서, 상기 질소가스(N2 Gas)탱크(200) 내부에 위치한 난방공급배관(400)으로 공급되는 고온증기는 질소가스공급배관(500)에 설치된 온도감지센서The method of claim 1 wherein said nitrogen gas (N 2 Gas) tank 200, high-temperature steam fed to the heat supply pipe 400 is located inside the temperature sensor installed in the nitrogen gas supply pipe 500, (501)에 의해 감지된 신호에 따라 조절되는 체크밸브(600)에 의해 고온증기의 공급량이 조정되면서 질소가스 및 배출가스의 가열 및 보온이 이루어지는 것을 특징으로 하는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스 퍼지(Purge)방지용 질소가스 보온/가열장치.The semiconductor and LCD (LCD) production equipment characterized in that the heating and warming of nitrogen gas and exhaust gas is made while the supply amount of hot steam is adjusted by the check valve 600 is adjusted according to the signal sensed by 501 Nitrogen gas insulation / heating device to prevent purge of exhaust gas. 제1항에 있어서, 상기 반도체 및 엘씨디(LCD) 생산 설비(100)의 배기부 배출관(10)에 연장 설치된 공압을 이용한 흡배기장치(300)에 연결된 질소가스공급배관According to claim 1, Nitrogen gas supply pipe connected to the intake and exhaust device 300 using the pneumatic pressure extending to the exhaust pipe discharge pipe 10 of the semiconductor and LCD (LCD) production facility 100 (500)이 공장내에 배관되어 난방용 고온증기(Steam)가 순환되는 난방공급배관(400) 상에 설치된 난방탱크(700)를 통과하도록 설치되어 있고, 난방탱크(700)로 순환되는 고온증기에 의하여 질소가스공급배관(500)내의 질소가스(N2 Gas)가 보온/가열되어질 수 있도록 한 것을 특징으로 하는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스 퍼지(Purge)용 질소가스 보온/가열장치.500 is installed in the factory to pass through the heating tank 700 installed on the heating supply pipe 400 in which the heating steam is circulated, and the high temperature steam circulated to the heating tank 700 Nitrogen gas insulation / heating device for the exhaust gas purge (purge) of the semiconductor and LCD (LCD) production equipment, characterized in that the nitrogen gas (N 2 Gas) in the nitrogen gas supply pipe (500) can be maintained / heated. 제1항 또는 제4항에 있어서, 질소가스 보온/가열장치는, 관형인 몸체(800) 일측으로 고온증기가 주입되는 증기주입구(801)와 타측으로 증기배출구(802)가 형성되어 있고, 내부에 양측벽(803)을 관통하는 질소가스이송관(804)이 상,하로 분할 설치되어 있으며, 증기주입구(801)가 위치하는 쪽 측면에 질소가스가 순환되어질 수 있게 공간을 가지는 캡(805)이 설치되어 있고, 증기배출구(802)가 위치하는 쪽에는 내부가 격벽(806)에 의해 분리되어 하부에는 질소가스주입구(807)와 상부에 질소가스배출구(808)를 갖는 쳄버(809)가 설치되어 있는 것을 특징으로 하는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스 퍼지(Purge)용 질소가스 보온/가열장치.According to claim 1 or claim 4, Nitrogen gas thermal insulation / heating device, the steam inlet 801 to the high-temperature steam is injected into one side of the tubular body 800 and the steam outlet 802 is formed on the other side, the inside The nitrogen gas transfer pipe 804 penetrating both side walls 803 is installed up and down, and a cap 805 having a space to allow nitrogen gas to be circulated on the side where the steam inlet 801 is located is provided. The inside of which is separated by the partition wall 806 at the side where the steam outlet 802 is located, and a chamber 809 having a nitrogen gas inlet 807 and a nitrogen gas outlet 808 at the upper part is provided. Nitrogen gas insulation / heating device for purge the exhaust gas of semiconductor and LCD (LCD) production equipment. 제1항에 있어서, 상기 질소가스탱크(200)에는 가스배출관(10)에 설치된 다수의 공압을 이용한 흡배기장치(300)에 연결되는 질소가스공급배관(500)이 분관되어 있는 것을 특징으로 하는 반도체 및 엘씨디(LCD) 생산 장비의 배출가스According to claim 1, The nitrogen gas tank 200 is characterized in that the nitrogen gas supply pipe 500 connected to the intake and exhaust device 300 using a plurality of air pressure installed in the gas discharge pipe 10 is characterized in that the semiconductor And emissions from LCD production equipment 퍼지(Purge)용 질소가스 보온/가열장치.Nitrogen gas insulation / heating device for purge.
KR1020040108494A 2004-12-20 2004-12-20 A nitrogen gas keeping warmth / heater for exhaust gas purge of semiconductor and LCD production equipment KR100593487B1 (en)

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