CN113084696B - Polishing pad and grinding device - Google Patents
Polishing pad and grinding device Download PDFInfo
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- CN113084696B CN113084696B CN202110249345.0A CN202110249345A CN113084696B CN 113084696 B CN113084696 B CN 113084696B CN 202110249345 A CN202110249345 A CN 202110249345A CN 113084696 B CN113084696 B CN 113084696B
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- polishing pad
- holes
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- polishing
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
- B24B37/07—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool
- B24B37/10—Lapping machines or devices; Accessories designed for working plane surfaces characterised by the movement of the work or lapping tool for single side lapping
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
- B24B7/228—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain for grinding thin, brittle parts, e.g. semiconductors, wafers
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- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
Disclosed are a polishing pad and a grinding apparatus, the polishing pad including: a plurality of through-holes extending through the polishing pad, wherein the plurality of through-holes are evenly distributed around a center of the polishing pad; and the groove is positioned on the second surface of the polishing pad, which is back to the wafer, and is used for communicating the through holes. Through the number that increases the through-hole in the circle region that uses the center of polishing pad as the centre of a circle, radius be R in this application to and a plurality of through-holes of evenly distributed, thereby make at wafer polishing in-process, the contact grinding liquid that the surface of wafer can be even has improved the planarization degree and the polishing effect of wafer.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to a polishing pad and a grinding device.
Background
Chemical Mechanical Polishing (CMP) is a process for planarizing a wafer surface during semiconductor manufacturing. In the chemical mechanical polishing process, a wafer is placed at a corresponding position of a grinding head, a polishing surface of the wafer faces a polishing pad, pressure is applied to the wafer through the grinding head, meanwhile, grinding fluid is supplied between the wafer and the polishing pad, and the surface of the wafer is flattened through relative motion between the wafer and the polishing pad and chemical reaction between the wafer and the grinding fluid.
During the polishing process, the wafer is positioned below the polishing pad, and the center of the polishing pad is provided with a grinding fluid channel for introducing grinding fluid between the wafer and the polishing pad. When the wafer rotates, the grinding fluid channel draws a circle on the wafer, and a large amount of grinding fluid is gathered at the edge of the circle, so that the polishing speed is too fast, and finally, the polished surface of the wafer is formed into a wild goose-shaped surface shape which is concave along the edge of the circle.
Disclosure of Invention
In view of the above problems, the present invention provides a polishing pad and a polishing apparatus, which can improve the planarization degree and uniformity of the polishing pad on the wafer surface by changing the number and distribution position of the through holes of the polishing pad, so as to make the concentration and dosage of the polishing solution contacted by the wafer surface during the polishing process more uniform.
According to an aspect of the present invention, there is provided a polishing pad comprising: a plurality of through-holes extending through the polishing pad, wherein the plurality of through-holes are distributed around a center of the polishing pad; and the groove is positioned on the second surface of the polishing pad, which is back to the wafer, and is used for communicating the through holes.
Optionally, the plurality of through holes are uniformly distributed in a circular area, and the center of the circular area coincides with the center of the polishing pad.
Optionally, the polishing pad has a through hole in a central location.
Optionally, the maximum radius of the circular region is 75 cm.
Optionally, the plurality of through holes are uniformly distributed on a plurality of concentric circles within the circular region, and the centers of the plurality of concentric circles coincide with the center of the polishing pad.
Optionally, the plurality of through holes on each concentric circle are communicated through a circular groove.
Optionally, the plurality of through holes in the circular area are cross-shaped, m-shaped, straight-shaped or Y-shaped.
According to another aspect of the present invention, there is provided a grinding apparatus comprising: the first base is used for placing a wafer to be polished; the second base is positioned above the first base, and a grinding fluid channel penetrating through the second base is formed in the second base; the polishing pad is evenly distributed around the center of the polishing pad with a plurality of through holes penetrating through the polishing pad, wherein the grinding liquid channel is communicated with the through holes of the polishing pad, and grooves are formed on a second surface of the polishing pad, back to the wafer, for communicating the through holes.
Optionally, the second surface of the polishing pad is coupled to the second base.
According to the polishing pad and the grinding device provided by the invention, the number of the through holes is increased in the circular area with the center of the polishing pad as the circle center and the radius of R, and the through holes are uniformly distributed, so that the surface of a wafer can uniformly contact grinding liquid in the wafer polishing process, and the planarization degree and the polishing effect of the wafer are improved.
According to the polishing pad and the grinding device provided by the invention, the grooves are formed on the second surface of the polishing pad, and the through holes are communicated on the second surface of the polishing pad, so that the through holes can be uniform as much as possible when grinding liquid is supplied, and the planarization degree of the surface of a ground wafer is further improved.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings, in which:
FIGS. 1a to 1c show a structure of a polishing apparatus according to the prior art;
FIG. 2 is a schematic view showing a modified principle of a grinding apparatus according to an embodiment of the present invention;
FIGS. 3a and 3b illustrate bottom and top views of a polishing pad according to a first embodiment of the present invention;
FIGS. 4a and 4b illustrate bottom and top views of a polishing pad according to a second embodiment of the present invention;
FIGS. 5a and 5b illustrate bottom and top views of a polishing pad according to a third embodiment of the present invention;
FIGS. 6a and 6b show bottom and top views of a polishing pad according to a fourth embodiment of the present invention;
fig. 7a and 7b illustrate bottom and top views of a polishing pad according to a fifth embodiment of the present invention.
Detailed Description
The invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by like reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale. In addition, certain well known components may not be shown. For simplicity, the semiconductor structure obtained after several steps can be described in one figure.
It will be understood that when a layer or region is referred to as being "on" or "over" another layer or region in describing the structure of the device, it can be directly on the other layer or region or intervening layers or regions may also be present. And, if the device is turned over, that layer, region, or regions would be "under" or "beneath" another layer, region, or regions.
If for the purpose of describing the situation directly above another layer, another area, the expression "directly above … …" or "above and adjacent to … …" will be used herein.
The CMP process uses an abrasive liquid in conjunction with a polishing pad and planarizes a wafer surface by relative movement between the wafer and the polishing pad in the presence of the abrasive liquid while applying pressure.
Fig. 1a to 1c show a construction of a grinding device according to the prior art, fig. 1a and 1c for example being sectional views in the direction indicated by the broken line AA in fig. 1 b. As shown, the polishing apparatus 100 at least includes a first base 131, a second base 132, a polishing pad 110 disposed on the second base 132, and a Slurry (Slurry) channel 111 penetrating the second base 132 and the center of the polishing pad 110, wherein the first base 131 is used for fixing the wafer 120 and driving the wafer 120 to rotate clockwise or counterclockwise, and the second base 132 is used for fixing the polishing pad 110 and driving the polishing pad 110 to rotate counterclockwise or clockwise.
When polishing the wafer 120 by using the polishing pad 110, the wafer 120 is positioned below the polishing pad 110, the Slurry (Slurry) reaches the contact surface of the polishing pad 110 and the wafer 120 from above the polishing pad 110 through the Slurry channel 111, and the surface of the wafer 120 is flattened by the relative movement of the wafer 120 and the polishing pad 110 under the condition of applying pressure and the presence of the Slurry, wherein at least the wafer 120 rotates clockwise or counterclockwise along the center during the movement. For example, when the wafer 120 and the polishing pad 110 move relatively, the slurry reaches the surface of the wafer 120 through the slurry channel 111, the falling point of the slurry makes a circle on the wafer 120, the falling point is on the surface of the wafer 120 at a faster rate than other areas of the wafer 120 during the polishing process, and the slurry moves toward the edge of the wafer 120 due to centrifugal action, so the falling point area of the slurry and the surface near the edge area of the wafer 120 are lower than the surface of the central area of the wafer 120, and the surface height of the falling point area of the slurry is the lowest, which causes the surface of the wafer 120 to have a wild goose shape due to the non-uniform distribution of the slurry, resulting in low flatness and poor polishing effect.
The inventors of the present application have noted the above problems and have proposed a polishing apparatus capable of improving the polishing effect of a wafer.
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples.
Fig. 2 shows a schematic view of a modified principle of the grinding apparatus according to the embodiment of the present invention. Referring to FIG. 2, since the radius of the wafer 120 is smaller than the radius of the polishing pad 110, and the center of the wafer 120 does not coincide with the center of the polishing pad 110, the wafer 120 and the polishing pad 110 are tangent to the same line. As can be seen from fig. 2, when the wafer 120 rotates clockwise or counterclockwise around the center, the circular region 130 can be drawn across the entire wafer 120, and if the plurality of through holes 113 communicating with the slurry channel 111 are uniformly formed in the circular region 130, the slurry can be uniformly distributed on the surface of the wafer 120, thereby improving the polishing effect of the polishing apparatus on the wafer.
In this embodiment, the circular region 130 is a circle having a radius R of at most 75cm, the center of the circle is, for example, the center of the polishing pad 110, a plurality of circles having a radius not greater than R are drawn around the center of the circular region 130, and a plurality of through holes 113 are uniformly distributed on each circle, so that the slurry can uniformly reach the surface of the wafer 120 through the slurry channel 111 and the plurality of through holes 113 during the rotation of the wafer 120, thereby improving the polishing effect.
FIGS. 3a and 3b illustrate bottom and top views of a polishing pad according to a first embodiment of the present invention; fig. 4a and 4b illustrate bottom and top views of a polishing pad according to a second embodiment of the present invention. Wherein fig. 3a and 4a are, for example, a first surface of a polishing pad, and fig. 3b and 4b are, for example, a second surface of the polishing pad.
Referring to fig. 3a and 3b, in the first embodiment, a circle is drawn in the circle region 130 with a radius of R/2 and centered at the center of the polishing pad 110, four through holes 113 are uniformly formed along a cross on the circle, and one through hole 113 is formed at the center of the circle, at this time, five through holes 113 are formed on the polishing pad 110, and when the wafer 120 rotates, the slurry reaching the surface of the wafer 120 through the slurry channel 111 and the through holes 113 may cover most of the surface of the wafer 120, thereby improving the polishing effect of the wafer 120.
In this embodiment, on the second surface of the polishing pad 110, i.e., the surface of the polishing pad 110 that is in contact with the second base 132, grooves 112 are formed along the circumference where the plurality of through-holes 113 are located to communicate the plurality of through-holes 113, and the through-hole 113 at the center of the circle is communicated with the other plurality of through-holes 113 through the cross-shaped groove 112. Therefore, when the slurry is introduced into the central through hole 113 through the slurry channel 111 penetrating the center of the second base 132, the slurry can reach the plurality of circumferential through holes 113 through the grooves 112 and further reach the contact surface of the wafer 120 and the polishing pad 110, without connecting each through hole with the slurry channel 111, and simultaneously, the flow rate of the slurry in each through hole 113 is ensured to be consistent.
The second embodiment is different from the polishing pad 110 of the first embodiment in that the number of circles drawn and the radius are different from each other with the center of the polishing pad 110 as the center, as shown in fig. 4a and 4 b. In the second embodiment, circles are drawn with radii of R/3 and 2R/3, respectively, a plurality of through holes 113 are formed along the line "cross" on the circle, and a groove 112 is formed along the circumference and the line "cross" on the second surface of the polishing pad 110 to communicate the through hole 113 at the center of the circle with the plurality of through holes 113 at the circumference.
In other embodiments, the radius of the circumference where the through holes 113 are located may be other radius not greater than R, and at least two circles may be drawn with the center of the polishing pad 110 as the center, a plurality of through holes 113 are formed along the cross shape on the circle, the through holes 113 are uniformly distributed in the circular region 130, and when the wafer 120 rotates clockwise or counterclockwise, the through holes distributed in the circular region 130 allow the polishing slurry to be uniformly distributed on the surface of the wafer 120, thereby improving the polishing effect.
FIGS. 5a and 5b illustrate bottom and top views of a polishing pad according to a third embodiment of the present invention; the difference from the polishing pad 110 of the first and second embodiments is that the distribution of the plurality of through holes 113 is different, and the same parts will not be described again, and only the difference will be described.
Referring to fig. 5a and 5b, circles are drawn on the first surface of the polishing pad 110 with radii of R/3 and 2R/3, respectively, to form a plurality of through-holes 113 along the shape of a meter on the circle, and grooves 112 are formed along the circumference and the shape of a meter on the second surface of the polishing pad 110 to communicate the through-holes 113 at the center of the circle with the plurality of through-holes 113 at the circumference.
In this embodiment, eight through holes 113 are distributed on the circumference of the outermost layer, and at least four through holes 114 are distributed on the circumference of the inner layer, so that 13 through holes 113 are formed in the circular region 130, and the through holes are uniformly distributed in the region 113, so that the polishing slurry can uniformly reach the surface of the wafer 120 when the wafer 120 rotates clockwise or counterclockwise, thereby improving the polishing effect of the wafer 120.
In other embodiments, the radius of the circle where the through holes 113 are located may be other radius not greater than R, and one or more than two circles may be formed in the circular region 130 of the first surface of the polishing pad 110, a plurality of through holes 113 are uniformly distributed along the shape of a "meter" on each circle, and the grooves 112 are formed along the circle and the shape of a "meter" on the second surface of the polishing pad 110, so that when the polishing slurry is introduced to the surface of the wafer 120, the polishing slurry may be uniformly distributed on the surface of the wafer 120.
FIGS. 6a and 6b show bottom and top views of a polishing pad according to a fourth embodiment of the present invention; the difference from the polishing pad 110 of the first to third embodiments is that the distribution of the plurality of through holes 113 is different, and the same parts will not be described herein, and only the differences will be described.
Referring to fig. 6a and 6b, circles are drawn on the first surface of the polishing pad 110 with radii of R/3 and 2R/3, respectively, a plurality of through-holes 113 are formed along the shape of a straight line on the circles, and grooves 112 are formed along the circumference and the shape of a straight line on the second surface of the polishing pad 110 to communicate the through-holes 113 at the center of the circle with the plurality of through-holes 113 at the circumference.
In this embodiment, two through holes 113 with the same diameter are distributed on the circumference of each layer, and two through holes 114 are also distributed on the circumference of the inner layer along the same diameter, so that five through holes 113 are formed in the circular region 130, and the through holes 113 are uniformly distributed in the circular region 130, so that when the wafer 120 rotates clockwise or counterclockwise, the slurry can uniformly reach the surface of the wafer 120, thereby improving the polishing effect of the wafer 120.
In other embodiments, the radius of the circle where the through holes 113 are located may be other radius not greater than R, and one or more than two circles may be formed in the circular region 130 of the first surface of the polishing pad 110, a plurality of through holes 113 may be uniformly distributed along a straight line on each circle, and grooves 112 may be formed in the second surface of the polishing pad 110 along the circles and the straight lines, so that the polishing slurry may be uniformly distributed on the surface of the wafer 120 when the polishing slurry is introduced onto the surface of the wafer 120.
FIGS. 7a and 7b illustrate bottom and top views of a polishing pad according to a fifth embodiment of the present invention; the difference from the polishing pad 110 of the first to fourth embodiments is that the distribution of the plurality of through holes 113 is different, and the same parts will not be described herein, and only the differences will be described.
Referring to fig. 7a and 7b, circles are drawn on the first surface of the polishing pad 110 with radii of R/3 and 2R/3, respectively, a plurality of through-holes 113 are formed along a "Y" shape on the circles, and grooves 112 are formed along the circumference and the "Y" shape on the second surface of the polishing pad 110 to communicate the through-holes 113 at the center of the circle with the plurality of through-holes 113 at the circumference.
In this embodiment, three through holes 113 distributed along a "Y" shape are distributed on the circumference of each layer, and three through holes 114 are also distributed along a "Y" shape on the circumference of the inner layer, so that seven through holes 113 are formed in the circular region 130, and the through holes 113 are uniformly distributed in the circular region 130, so that when the wafer 120 rotates clockwise or counterclockwise, the slurry can uniformly reach the surface of the wafer 120, thereby improving the polishing effect of the wafer 120.
In other embodiments, the radius of the circumference where the through holes 113 are located may be other radius not greater than R, and one or more than two circumferences may be formed in the circular region 130 of the first surface of the polishing pad 110, a plurality of through holes 113 may be uniformly distributed along a "Y" shape on each circumference, and grooves 112 may be formed along the circumference and the "Y" shape on the second surface of the polishing pad 110, so that when the polishing slurry is introduced to the surface of the wafer 120, the polishing slurry may be uniformly distributed on the surface of the wafer 120.
According to the polishing pad and the grinding device provided by the invention, the number of the through holes is increased in the region with the center of the polishing pad as the circle center and the radius of R, and the through holes are uniformly distributed, so that the surface of a wafer can uniformly contact with grinding liquid in the wafer polishing process, and the planarization degree and the polishing effect of the wafer are improved.
According to the polishing pad and the grinding device provided by the invention, the grooves are formed on the second surface of the polishing pad, and the through holes are communicated on the second surface of the polishing pad, so that the through holes can be uniform as much as possible when grinding liquid is supplied, and the planarization degree of the surface of a ground wafer is further improved.
While embodiments in accordance with the invention have been described above, these embodiments are not intended to be exhaustive or to limit the invention to the precise embodiments described. Obviously, many modifications and variations are possible in light of the above teaching. The embodiments were chosen and described in order to best explain the principles of the invention and the practical application, to thereby enable others skilled in the art to best utilize the invention and various embodiments with various modifications as are suited to the particular use contemplated. The invention is limited only by the claims and their full scope and equivalents.
Claims (7)
1. A polishing pad, comprising:
a plurality of through-holes through the polishing pad, the plurality of through-holes distributed around a center of the polishing pad;
a groove on a second surface of the polishing pad opposite to the wafer for communicating the through holes,
the groove comprises a circular groove and a linear groove, the circular groove is communicated with a plurality of through holes on the circumference where the circular groove is located, the linear groove is communicated with a plurality of through holes on the extension line of the linear groove, the through holes are uniformly distributed in a circular area, the center of the circular area is coincided with the center of the polishing pad, and when the wafer rotates along the center, the circular area can cross the whole wafer.
2. The polishing pad of claim 1, wherein the polishing pad has a through hole in a central location thereof.
3. The polishing pad of claim 1, wherein the circular region has a maximum radius of 75 cm.
4. The polishing pad of claim 1, wherein the plurality of through holes are distributed on a plurality of concentric circles within the circular region, the center of the plurality of concentric circles coinciding with the center of the polishing pad.
5. The polishing pad according to claim 1, wherein the plurality of through holes in the circular region are arranged in any one of a cross shape, a m shape, a line shape, or a Y shape.
6. A grinding apparatus, comprising:
the first base is used for placing a wafer to be polished;
the second base is positioned above the first base, and a grinding fluid channel penetrating through the second base is formed in the second base;
the polishing pad of any one of claims 1 to 5,
wherein the slurry channel communicates with the through-hole of the polishing pad.
7. The abrading apparatus of claim 6, wherein the second surface of the polishing pad is in contact with the second base.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110249345.0A CN113084696B (en) | 2021-03-08 | 2021-03-08 | Polishing pad and grinding device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110249345.0A CN113084696B (en) | 2021-03-08 | 2021-03-08 | Polishing pad and grinding device |
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| CN113084696A CN113084696A (en) | 2021-07-09 |
| CN113084696B true CN113084696B (en) | 2022-05-06 |
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| JPH11285962A (en) * | 1998-04-06 | 1999-10-19 | Sony Corp | Polishing pad, polishing device and method |
| KR20030053292A (en) * | 2001-12-22 | 2003-06-28 | 동부전자 주식회사 | Wafer polishing apparatus |
| US6951597B2 (en) * | 2003-10-31 | 2005-10-04 | Novellus Systems, Inc. | Dynamic polishing fluid delivery system for a rotational polishing apparatus |
| CN204471179U (en) * | 2015-01-28 | 2015-07-15 | 上海集成电路研发中心有限公司 | A kind of chemical-mechanical grinding device transmitting lapping liquid |
| TWI718663B (en) * | 2019-09-11 | 2021-02-11 | 智勝科技股份有限公司 | Polishing pad, polishing system and polishing method |
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| KR20010017688A (en) * | 1999-08-13 | 2001-03-05 | 김영환 | Apparatus for grinding wafer |
| KR20060034863A (en) * | 2004-10-20 | 2006-04-26 | 삼성전자주식회사 | Chemical mechanical polishing apparatus |
| TW201200296A (en) * | 2010-05-13 | 2012-01-01 | Asahi Glass Co Ltd | Polishing pad and polishing device using polishing pad |
| CN102221416A (en) * | 2011-03-10 | 2011-10-19 | 清华大学 | Polishing solution physical parameter measuring apparatus, measuring method and chemically mechanical polishing equipment |
| CN102922414A (en) * | 2012-10-18 | 2013-02-13 | 上海宏力半导体制造有限公司 | Chemical mechanical polishing device |
| CN106564004A (en) * | 2016-11-17 | 2017-04-19 | 湖北鼎龙控股股份有限公司 | Polishing pad |
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| Publication number | Publication date |
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| CN113084696A (en) | 2021-07-09 |
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