JPH1094965A - Chemical machine polishing device - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a chemical machine polishing device which can restrain the amount of a consumed polishing slurry to a necessary minimum. SOLUTION: A chemical machine polishing device 10 can polish a materiel 4 to be polished while supplying a polishing slurry 7 to a polishing pad 12. A polishing slurry supply passage for communicating with a through hole 15 installed on the polishing pad 12 is installed on a rotary polisher 11. The polishing surface 12a of the polishing pad 12 is divided to plural polishing areas and divided into a group in which the through hole 15 stays in the same polishing area. The group of the through hole 15 is communicated with an independent polishing slurry supply passage respectively and an adjust valve 19 is installed thereto. Detection means 20 for detecting the polishing area contacted to the material 4 to be polished is installed and connected to control means for controlling the adjust valve 19 so as to supply the polishing slurry 7 to the detected polishing area contacted to the material 4 to be polished.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a chemical mechanical polishing apparatus used for a chemical mechanical polishing method (CMP).

[0002]

2. Description of the Related Art In recent years, semiconductor devices such as VLSIs have been required to have higher integration and finer design. Accordingly, partial flattening at a pattern size level in a wafer surface and lithography have been required. There is a need for a technique that can achieve both overall planarization at the exposure region level. Under such circumstances, a chemical mechanical polishing method (hereinafter referred to as a CMP method) has attracted much attention as a technique for flattening, for example, polysilicon, an interlayer insulating film, and metal wiring embedded in a trench.

[0003] In the CMP method, a material to be polished held by a polishing head is pressed against a polishing surface of a polishing pad stretched on a rotary polishing board, and a polishing slurry is further supplied to the polishing surface of the polishing pad. By rotating the polishing pad and the polishing head in the same direction, the supplied polishing slurry is wound between the polishing pad and the material to be polished, thereby polishing the material to be polished chemically and mechanically. How to Here, as the polishing slurry, one obtained by dispersing abrasive particles in an acid or alkali solution is used.

[0004] As a chemical mechanical polishing apparatus (hereinafter referred to as a CMP apparatus) for performing such a CMP method,
Conventionally, for example, the configuration shown in FIG. 5 is known. In FIG. 5, reference numeral 1 denotes a CMP device.
The rotating polishing machine 2, a polishing pad 3 stretched integrally on the upper surface of the rotating polishing machine 2, a rotating mechanism (not shown) for rotating the rotating polishing machine 2, and a material to be polished 4 such as a wafer are held. It comprises a polishing head 5 for pressing the material to be polished 4 against the polishing surface 3a of the polishing pad 3, and a polishing slurry supply pipe 6 for supplying a polishing slurry onto the polishing surface 3a of the polishing pad 3. The polishing head 5 is arranged so as to be swingable, and is connected to a rotating mechanism (not shown) so that the polishing head 5 itself rotates. It rotates in the same direction as the rotary polishing machine 2. A pressing means (not shown) is connected to the polishing head 5, whereby the material 4 to be polished held by the polishing head 5 is pressed against the polishing surface 3 a of the polishing pad 3. .

In order to polish the material 4 to be polished by the CMP apparatus 1 having such a configuration, first, the material 4 to be polished is held by the polishing head 5 with the surface to be processed facing downward, and Then, the surface to be processed of the material to be polished 4 is pressed against the polishing surface 3a of the polishing pad 3 so as to have an appropriate processing pressure. Next, as described above, while the polishing slurry 7 is supplied from the polishing slurry supply pipe 6 to the polishing surface 3a of the polishing pad 3, the rotary polishing machine 2 and the polishing head 5 are respectively rotated in the same direction. Then, the material to be polished 4 is rotated.

Then, the polishing slurry 7 supplied onto the polishing pad 3 by the rotation of the polishing pad 3 and the material to be polished 4 spreads on the polishing surface 3a of the polishing pad 3, and the material to be polished 4 further becomes By moving relatively on the polishing pad 3, the material enters into the space between the polishing pad 3 and the material to be polished 4. Then, the polishing slurry 7 enters between the polishing pad 3 and the material to be polished 4 in this way, and the polishing pad 3 and the material to be polished 4 rub through the polishing slurry 7, whereby the material to be polished 4 The surface to be processed is chemically and mechanically polished by the polishing slurry 7 and is flattened to a state having desired flatness.

[0007]

The above-mentioned CM
Polishing by the P device 1 has the following disadvantages. In the initial stage of polishing, as shown in FIG. 6A, the polishing surface 3a of the polishing pad 3 has uniform irregularities, so that an appropriate gap is formed between the polishing pad 3 and the material 4 to be polished. ing. Therefore, the polishing slurry 7 is easily caught and entered between the polishing pad 3 and the material to be polished 4 by the rotational movement of the material to be polished 4, and the polishing slurry 7 is polished between the polishing pad 3 and the material to be polished 4 during polishing. The abrasive particles 7a in the slurry 7 are sufficiently interposed.

However, as the polishing is continued,
As shown in FIG. 6 (b), the polishing surface 3a of the polishing pad 3 is flattened by its irregularities being worn away. Then, the gap between the polishing pad 3 and the material to be polished 4 becomes small and the polishing slurry 7 becomes difficult to be caught, and the polishing slurry which enters between the polishing pad 3 and the material to be polished 4 and contributes to polishing 7, the amount of the abrasive particles 7a in particular decreases as compared with the initial stage of polishing. As a result, the polishing speed becomes slow and the polishing time becomes long, which causes inconveniences such as difficulty in controlling the polishing end point.

As a countermeasure against such inconvenience, conventionally, a grid-like groove or a concentric groove is formed on a polishing surface of a polishing pad, and an improvement is made so that the polishing slurry can be distributed in the polishing pad surface through this groove. Improvements such as embossing the polishing pad surface are known. However,
In such improvements, as the polishing progresses and the polishing pad is scraped off from the surface, the grooves and embosses gradually become shallower and eventually disappear, so it is necessary to surely prevent the polishing rate from slowing down. Can not.

On the other hand, there has been proposed an apparatus in which a polishing pad is formed from a porous material having continuous pores, and a polishing slurry is supplied by uniformly leaching the polishing slurry onto a polishing surface of the polishing pad (Japanese Patent Laid-Open No. Hei 2 (1990) -1990). No. 100321).
However, in this polishing apparatus, since the polishing slurry is supplied uniformly from almost the entire surface of the porous polishing pad, the consumption of the polishing slurry becomes large, and naturally, the polishing slurry flows down from the polishing pad without contributing to the polishing and is discarded. The amount of slurry also becomes large. Therefore, waste is greatly increased, and this is one of the factors that hinders a reduction in production cost.

The present invention has been made in view of the above circumstances, and an object of the present invention is to supply a sufficient polishing slurry for polishing between a polishing pad and a material to be polished regardless of the degree of progress of polishing. It is an object of the present invention to provide a chemical mechanical polishing apparatus capable of reducing the amount of the polishing slurry to be consumed and minimizing the amount of the consumed polishing slurry.

[0012]

Means for Solving the Problems Claim 1 of the present invention
The chemical mechanical polishing apparatus according to the present invention includes a rotary polishing machine and a polishing pad provided on one surface of the polishing machine, and the polishing pad has a plurality of through-holes opened in the polishing surface with respect to the polishing surface. A polishing slurry supply path is provided in a dispersed manner and the rotary polishing machine communicates with a through hole of the polishing pad. The polishing slurry is supplied from the polishing slurry supply source to the polishing slurry supply path and the polishing pad through the through hole of the polishing pad. The polishing surface of the polishing pad is divided into a plurality of polishing regions in the direction of rotation, and the position at which the through hole opens on the polishing surface of the polishing pad is the same. The polishing area is divided into the same number as the number of the polishing areas by being set as one set, and the set of divided through holes communicates with the polishing slurry supply path independent for each set. Each of the polishing slurry supply paths is provided with an adjusting valve for adjusting the supply of the polishing slurry from the polishing slurry supply source to the through hole, and these are rotated near the rotary polishing machine or the polishing pad to rotate the polishing slurry. Detecting means for detecting a polishing area which comes into contact with the material to be polished when the polishing slurry is supplied to a set of through holes opened to the polishing area which comes into contact with the detected material to be polished. A means for solving the above-mentioned problem is that control means for controlling an adjustment valve of the polishing slurry supply path is connected so as to supply the polishing slurry from the source via the polishing slurry supply path.

According to this chemical mechanical polishing apparatus, the polishing pad is provided with a through-hole, and the rotary polishing machine is provided with a polishing slurry supply passage communicating with the through-hole. The slurry is supplied to the polishing surface of the polishing pad via the slurry supply path and the through-hole, so that the polishing slurry is supplied to the polishing surface, that is, It becomes possible to supply between the material to be polished. Also,
The polishing surface of the polishing pad is divided into a plurality of polishing areas, the through holes are divided into sets corresponding to these polishing areas, and the sets of these through holes are communicated with respective independent polishing slurry supply paths,
Adjustment valves for adjusting the supply of the polishing slurry are provided in the respective polishing slurry supply paths. By adjusting these adjustment valves, the supply of the polishing slurry onto the polishing surface can be performed for each polishing region. A detecting means for detecting a polishing region in contact with the material to be polished is provided near the rotary polishing machine or the polishing pad, and the adjusting valve is controlled to supply the polishing slurry to the detected polishing region. Control means for supplying the polishing slurry to the polishing area detected by the control means, and for example, adjusting the respective regulating valves so as not to supply the polishing slurry to the polishing areas other than the detected polishing area. By controlling, the amount of the polishing slurry consumed without contributing to the polishing can be reduced.

In this chemical mechanical polishing apparatus, the polishing surface of the polishing pad is divided into three or more polishing areas.
The control means supplies the polishing slurry to a set of through-holes that open to the polishing area that comes into contact with the material to be polished detected by the detection means, and opens the polishing area next to the polishing area that comes into contact with the material to be polished. The control valve of the polishing slurry supply path is controlled so as to supply the polishing slurry to the set of through holes, and the control valve of the polishing slurry supply path is controlled so as not to supply the polishing slurry to the other set of through holes. Preferably. By supplying the polishing slurry not only to the polishing region in contact with the material to be polished but also to the next polishing region in this way, when the material to be polished moves from the polishing region to the next polishing region. In addition, there is no fear that sufficient polishing slurry does not intervene between the polishing surface and the material to be polished due to a time delay until the control valve is opened and the polishing slurry is supplied onto the polishing surface.

According to a third aspect of the present invention, there is provided a chemical mechanical polishing apparatus comprising: a rotary polishing machine; and a polishing pad provided on one surface of the rotary polishing machine, wherein the polishing pad has a large number of continuous pores. A polishing slurry supply path formed of a porous material and connected to the continuous pores of the polishing pad is provided on the rotary polishing machine, and the polishing slurry is supplied from the polishing slurry supply source through the polishing slurry supply path and the continuous pores of the polishing pad. The polishing slurry is configured to be supplied to a polishing surface of the polishing slurry, wherein the polishing pad is divided into a plurality of polishing regions in the rotational direction, and the divided polishing regions are respectively independent on the surface opposite to the polishing surface. The supply of the polishing slurry from the polishing slurry supply source to the continuous pores of the polishing pad is connected to the supply paths, and the polishing slurry supply paths are respectively connected to the polishing slurry supply paths. A valve regulating device is provided, and a detecting means for detecting a polishing area which comes into contact with the material to be polished when these are rotating is provided in the vicinity of the rotary polishing machine or the polishing pad. Control means for controlling an adjustment valve of the polishing slurry supply path so as to supply the polishing slurry from the polishing slurry supply source via the polishing slurry supply path to a polishing region in contact with the material to be polished. Is a means for solving the above problem.

According to this chemical mechanical polishing apparatus, the polishing pad is formed of a porous material having a large number of continuous pores, and the polishing slurry supply path communicating with the continuous pores of the polishing pad is provided on the rotary polishing machine. The polishing slurry is supplied from the polishing slurry supply source to the polishing surface of the polishing pad via the polishing slurry supply path and the continuous pores of the polishing pad, so that the polishing proceeds in the same manner as in the chemical mechanical polishing apparatus according to claim 1. The polishing slurry can be supplied on the polished surface, that is, between the polished surface and the material to be polished, without being affected by the abrasion of the unevenness of the polished surface. Further, the polishing surface of the polishing pad is divided into a plurality of polishing areas, the divided polishing areas are connected to the respective independent polishing slurry supply paths, and an adjustment valve for adjusting the supply of the polishing slurry to each of the polishing slurry supply paths is provided. By providing these adjustment valves, the supply of the polishing slurry onto the polishing surface can be performed for each polishing area by adjusting these control valves. And, in the vicinity of the rotary polishing machine or the polishing pad, a detecting means for detecting a polishing area in contact with the material to be polished is provided.
Since the control means for controlling the regulating valve is connected so as to supply the polishing slurry to the detected polishing area, the polishing area detected by the control means is controlled similarly to the chemical mechanical polishing apparatus according to claim 1. By supplying the polishing slurry, and by controlling the respective adjustment valve so as not to supply the polishing slurry to the polishing region other than the detected polishing region, for example, the amount of the polishing slurry consumed without contributing to the polishing is reduced. It becomes possible to suppress.

In this chemical mechanical polishing apparatus, the polishing surface of the polishing pad is divided into three or more polishing areas.
The control means controls the polishing so that the polishing slurry is supplied to the polishing area which comes into contact with the material to be polished detected by the detection means, and the polishing slurry is supplied to the polishing area which comes into contact with the material to be polished next to the polishing area. It is preferable that the control valve of the slurry supply path be controlled and the control valve of the polishing slurry supply path be controlled so as not to supply the polishing slurry to the other polishing areas. By supplying the polishing slurry not only to the polishing region in contact with the material to be polished but also to the next polishing region in the same manner as described above, the polishing slurry is supplied from the polishing region in contact with the material to be polished to the next region. Due to the time delay between the opening of the regulating valve and the supply of the polishing slurry onto the polishing surface, sufficient polishing slurry is interposed between the polishing surface and the material to be polished. There is no danger that it will stop.

[0018]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a chemical mechanical polishing apparatus according to the present invention will be described in detail based on an embodiment. Figure 1,
FIG. 2 is a view showing an embodiment of the chemical mechanical polishing apparatus according to the first embodiment. In these figures, reference numeral 10 denotes a chemical mechanical polishing apparatus (CMP apparatus). The CMP apparatus 10 includes a disk-shaped rotary polishing disk 11, a disk-shaped polishing pad 12 that is integrally and liquid-tightly stretched on the lower surface of the disk-shaped polishing disk 11, and a rotation mechanism (not shown) for rotating the rotary polishing disk 11. Abbreviation),
A polishing head 13 for holding a material 4 to be polished made of a wafer and pressing the material 4 to be polished against a polishing surface 12a of a polishing pad 12; and a CMP apparatus 1 shown in FIG.
Unlike the polishing pad 12, the polishing surface 12a of the polishing pad 12 faces downward, and the work surface of the material to be polished 4 faces upward.

As shown in FIG. 2, the polishing pad 12 has a large number of through holes 15 which are opened on the polishing surface 12a and are also opened on the surface on the side of the rotary polishing plate 11. These through holes 15 are arranged in a state of being uniformly dispersed with respect to the polishing surface 12a. In this example, as shown in FIG. 2, the through holes 15 are arranged in a large number of rows concentrically with the outer periphery of the polishing pad 12. (Only shown in two columns in FIG. 2,
In fact, more will be provided). In addition, these through holes 1
Are formed to have a fine diameter such that the abrasive particles 7a in the polishing slurry 7 can easily pass through.

As shown in FIG. 1, pipes 16 communicating with the through holes 15 are provided inside the rotary polishing machine 11. These pipes 16 are connected to the through holes 15 in a one-to-one relationship, and on the side opposite to the through holes 15 are connected to one large pipe 17 for each polishing region described later. It is summarized in this. These large pipes 17 are pipes 16 (not shown).
Are connected to each other by a connecting member having a known configuration that does not transmit one rotational motion to the other. . That is, these large pipes 17 ...
Are connected to the pipes 16.
Is drawn out through the inside of the rotating shaft 11a,
Connected to a polishing slurry supply source 18 and connected to a pipe 16
Are connected to the rotary polishing machine 11 so that the rotary motion is not transmitted by the action of the connecting member. It has become. The above-mentioned pipes 16 and large pipes 17 form a polishing slurry supply path of the present invention.

An adjustment valve 19 is attached to each of the large pipes 17 on the side where the large-diameter pipe 17 is drawn out of the rotary polishing machine 11. The regulating valve 19 is connected to the polishing slurry supply source 18.
To control the supply of the polishing slurry 7 to the polishing surface 12a of the polishing pad 12 through the large pipes 17, the pipes 16, and the like, and the opening and closing of the polishing slurry 7 is controlled by a control device described later. .

The polishing surface 12a of the polishing pad 12 is equally divided into a plurality of polishing regions, in this example, four polishing regions A, B, C, and D as shown in FIG. ing. The through-holes 15 are formed as a set having openings in the polishing surface 12a in the same polishing area, and each set is connected to one large pipe via the pipe 16 as described above. 17. That is, the through-holes 15 grouped for each polishing area.
Are connected to a large pipe 17 which is an independent polishing slurry supply path for each set. When the polishing slurry 7 is supplied from the large pipe 17, the through holes 15 communicating with the large slurry 17 are connected to the large pipes 17. , The polishing slurry 7 is simultaneously poured out.

In the vicinity of the rotary polishing machine 11, a detecting device (detecting means) for detecting which of the polishing areas A, B, C and D is in contact with the workpiece 4 during rotation thereof. 20 are provided. The detection device 20 is composed of a limit switch in this example,
By pressing against the projection 21 provided on the side peripheral surface of the polishing head 13, a polishing region which comes into contact with the material 4 to be polished held by the polishing head 13 is detected. That is, the detection device 20 is arranged in advance so as to have a predetermined positional relationship with the polishing head 13 that holds the material 4 to be polished, while the projection 21 has a predetermined position in each polishing region,
In this example, it is arranged at a position corresponding to the leading position in the rotational direction (indicated by an arrow in FIG. 2) of the rotary polishing plate 11 in each polishing area.

Under such a configuration, the projection 21 rotates with the rotation of the rotary polishing plate 11, and this presses the detection device 20 composed of a limit switch. It is detected that the polishing region in contact with the material 4 has moved to the next polishing region, and thereby a new polishing region in contact with the material 4 to be polished is detected. In the state shown in FIG.
The material 4 to be polished is in contact with the
When the projection 21 in the polishing area B presses the detecting device 20 by one rotation, the detecting device 20 detects that the polishing area in contact with the material to be polished 4 moves from D to C.

A control device (control means) 22 for controlling the opening and closing of the regulating valve 19 is connected to the detecting device 20. The control device 22 controls the through hole 1 that opens in the polishing region that comes into contact with the material 4 to be polished detected by the detection device 20.
.., A large pipe 17 from the polishing slurry supply source 18,
The polishing slurry 7 is supplied through the pipes 16... In order to cause the polishing slurry 7 to flow out to the polishing area, the regulating valve 19 of the large pipe 17 corresponding to the polishing area is opened. The corresponding regulating valve 19 of the large pipe 17 is opened so as to supply the polishing slurry 7 also to the polishing region in contact with the polishing material 4. In this case, the control device 22 closes the regulating valve 19 of the large pipe 17 corresponding to the two polishing regions so as not to supply the polishing slurry 7 to the polishing regions other than the two polishing regions.

In this embodiment, the diameter of the polishing pad 12 is about 1 m, and an 8-inch wafer is used as the material 4 to be polished. Therefore, the polishing head 13 has the same diameter. I have. The polishing head 13
Is arranged so as to be swingable similarly to the polishing head 5 shown in FIG. 5, and is connected to a rotating mechanism (not shown) so that the polishing head 13 itself rotates. The material 4 to be polished is held on the rotary polishing machine 1.
1 rotates in the same direction. A pressing means (not shown) is connected to the polishing head 13 so that the material 4 to be polished held by the polishing head 13 is pressed against the polishing surface 12a of the polishing pad 12 at a predetermined pressure. Has become. Here, the rotation speed of the rotary polishing machine 11 is set to 30 rpm, and the rotation speed of the polishing head 13 is set to the same rotation speed as that of the rotary polishing machine 11.

In order to polish the material 4 to be polished by the CMP apparatus 10 having such a configuration, first, the material 4 to be polished is set on the polishing head 13, and then the rotary polishing machine 11 is rotated and the polishing head 13 is moved. Also rotate. Also,
At this time, the detecting device 20 and the control device 22 are operated, whereby the polishing slurry corresponding to the position of the material to be polished 4, that is, the polishing region corresponding to the position where the material to be polished 4 comes in contact with the polishing region next to the polishing region. Supply. Then, in this state, the polishing head 13 is raised, and a predetermined pressure is applied to the material to be polished. Face 1
2a.

Then, the through hole 1 opened in the polishing surface 12a is formed.
5, the polishing slurry 7 is supplied and flows out from the through-holes 15 that open to the polishing region where the polishing target material 4 is in contact, so that there is sufficient space between the polishing region and the polishing target material 4. A large amount of the polishing slurry 7 is interposed,
Therefore, good polishing proceeds. Further, even if the irregularities on the polishing surface 12a of the polishing pad 12 are worn down with the passage of time, the polishing slurry 7 is directly supplied from the through holes 15 to the polishing surface 12a.
a and the material to be polished 4, a sufficient amount of the polishing slurry 7 is still secured between the polishing surface 12 a and the material to be polished 4, and good polishing is continued. Also, the polishing slurry 7 is supplied only to the polishing region detected by the detection device 20 and the polishing region next to the polishing region,
Since the polishing slurry 7 is not supplied to the other polishing areas, the amount of the polishing slurry 7 consumed without contributing to the polishing can be reduced.

Therefore, in this CMP apparatus 10,
Regardless of the degree of progress of polishing, a sufficient amount of polishing slurry 7 for polishing can be supplied between the polishing pad 12 and the material to be polished 4 and the amount of consumed polishing slurry can be minimized. . Further, since the polishing slurry 7 is supplied not only to the polishing region in contact with the polishing target material 4 but also to the next polishing region, the polishing region from the polishing region in contact with the polishing target material 4 to the next polishing region is supplied. When the operation proceeds to the step (a), the regulating valve 19 is opened and the polishing slurry 7 is supplied onto the polishing surface 12a.
It can be prevented that a sufficient polishing slurry 7 does not intervene between the material 4 and the material 4 to be polished.

FIGS. 3 and 4 show an embodiment of the chemical mechanical polishing apparatus according to the third aspect of the present invention. In these figures, reference numeral 30 denotes a chemical mechanical polishing apparatus (CMP apparatus). This CMP apparatus 30 differs from the CMP apparatus 10 shown in FIGS. 1 and 2 mainly in that the polishing pad is formed of a porous material having a large number of continuous pores.

That is, in this CMP apparatus 30, the polishing pad 31 is made of a porous cured foamed polyurethane resin having uniform and continuous pores, a foamed epoxy resin, a sintered resin bead, and the like. The continuous pores serve the same function as the through holes 15 in the CMP apparatus 10. In addition, also in this polishing pad 31, as in the case of the CMP apparatus 10,
The polishing surface 31a is equally divided into four polishing regions A, B, C, and D.

The polishing pad 3 is provided inside the rotary polishing machine 32.
The lid member 33 is connected to the surface of the first member opposite to the polishing surface 31a. The lid member 33 has a cylindrical shape with a lid, and its cylindrical portion is formed low, and its internal space communicates with the continuous pores of the polishing pad 31. Further, a cross-shaped partition wall (not shown) is provided inside the lid member 33, thereby separating the inside into four independent spaces. These four spaces are polished areas A, B,
C and D correspond to each other in a one-to-one relationship, and the space communicates on the back side of each polishing region.

The lid member 33 is connected to pipes 34 at the lid surface. The pipes 34 communicate with the independent spaces inside the lid member 33, respectively.
On the side opposite to the side connected to the lid member 33, a large pipe 35
It is connected to the. The large pipe 34 is connected to the CMP apparatus 10.
And has the same configuration as that of the large pipe 17 in the above, and each of them communicates with one polishing region. An adjustment valve 19 is attached to these large pipes 35 similarly to the CMP device 10, and the adjustment valve 19 is controlled by the control device 22 based on the detection result of the detection device 20.

In order to polish the material 4 to be polished by the CMP apparatus 30 having such a configuration, the material 4 to be polished is first set on the polishing head 13 as in the case of the above-mentioned CMP apparatus 10, and then the rotary polishing is performed. The disk 11 is rotated, and the polishing head 13 is also rotated. At this time, the detection device 20 and the control device 22 are operated, whereby the polishing slurry 7 is supplied to the polishing region where the material to be polished 4 comes into contact and the polishing region next to the polishing region. Then, in this state, the polishing head 13 is raised, and a predetermined pressure is applied to the material to be polished. Surface 31a
Contact.

Then, the polishing area where the material to be polished 4 is in contact is supplied to the continuous pores of the polishing pad 31 from the polishing slurry supply source 18 through the large pipe 35, the pipe 34, and the inner space of the lid member 33. The polishing slurry 7 is supplied onto the polishing surface 31 from the openings of the continuous pores on the polishing surface 31a side. Therefore, a sufficient amount of the polishing slurry 7 is interposed between the polishing region and the material 4 to be polished, and good polishing proceeds. Further, even if the unevenness of the polishing surface 31a of the polishing pad 31 is worn over time, the polishing pad 3
Since the polishing slurry 7 is directly supplied between the polishing surface 31a and the material to be polished 4 from the one continuous pore, a sufficient amount of the polishing slurry 7 is still secured between the polishing surface 31a and the material to be polished 4. Therefore, good polishing can be continued. Further, the polishing slurry 7 is supplied only to the polishing region detected by the detection device 20 and the polishing region next to the polishing region, and the polishing slurry 7 is not supplied to the other polishing regions. As in the case of (1), the amount of the polishing slurry 7 consumed without contributing to the polishing can be suppressed to be small.

Therefore, in this CMP apparatus 30,
Regardless of the degree of progress of polishing, a sufficient amount of polishing slurry 7 for polishing can be supplied between the polishing pad 31 and the material to be polished 4, and the amount of consumed polishing slurry can be minimized. . Further, since the polishing slurry 7 is supplied not only to the polishing region in contact with the material to be polished 4 but also to the next polishing region, the material to be polished 4 is When the polishing area is moved from the contacting polishing area to the next polishing area, the regulating valve 19 is opened and the polishing slurry 7 is supplied to the polishing surface 31a. It is possible to prevent the sufficient polishing slurry 7 from intervening with the material 4.

In the above embodiment, the polishing pad 1
Although the polishing surface 12a (31a) of 2 (31) faces downward and the work surface of the material 4 to be polished faces upward, the present invention is not limited to this, and is shown in FIG. As in the conventional CMP apparatus 1, the polishing surface 12a (31a) may be directed upward, and the surface to be polished of the material to be polished 4 may be directed downward.
The polishing slurry may be supplied to the polishing surface 12a (31a) by providing a polishing slurry feeding means such as a pump on the side 8 and feeding the polishing slurry 7 with an appropriate pressing force.

In the above embodiment, a limit switch is used as the detection device (detection means) 20, and the limit switch is pressed by the projection 21 provided on the rotary polishing machine 11 (31), thereby forming the material 4 to be polished. However, the present invention is not limited to this. For example, a magnetic sensor may be used as a detecting device, and a magnet or the like may be embedded in the rotary polishing machine 11 (31). May be detected by a magnetic sensor to detect the polishing area. In addition, an optical sensor is used as a detecting device, and a reflection plate or the like is attached to the rotary polishing machine 11 (31), and this is detected by the optical sensor. Then, the polishing region may be detected.

Further, in the above embodiment, the polishing surface 12
a (31a) is equally divided into four, and four polishing regions A,
Although B, C, and D are formed, the present invention is not limited to this, and any number of polishing regions may be formed as long as they are plural. In the above-described embodiment, the polishing slurry 7 is supplied to the polishing region where the polishing target material 4 is in contact with the polishing region next to the polishing region, but only the polishing region where the polishing target material 4 is in contact with the polishing region. May be supplied with the polishing slurry 7. However, in that case, when the polishing target material 4 moves from the polishing region in contact with it to the next polishing region, the adjustment valve 19
In order to sufficiently shorten the time until the polishing slurry 7 is supplied to the polishing surface 12a (31a) by opening, the regulating valve 1 is used.
It is preferable that the polishing slurry 9 is brought closer to the polishing surface 12a (31a) as much as possible, or the polishing slurry 7 is made to flow quickly using a pumping means such as a pump.

In the above-described embodiment, the polishing slurry which has flowed out to the polishing surface 12a (31a) may be collected by providing a collecting device.
For example, a saucer may be provided below the polishing surface 12a (31a), and the collected polishing slurry 7 may be returned to the polishing slurry supply source 18. Alternatively, the collected polishing slurry may be regenerated, and then the polishing slurry may be recovered. It may be returned to the source 18 for use. By providing the recovery device in this way, wasteful consumption of the polishing slurry can be further suppressed.

[0041]

As described above, the chemical mechanical polishing apparatus according to the present invention can supply a sufficient amount of polishing slurry between the polishing pad and the material to be polished regardless of the degree of progress of polishing. Therefore, even if the unevenness of the polishing surface of the polishing pad is worn over time, the polishing is not affected by the unevenness, i.e., the polishing rate is not reduced, and the polishing is performed for a long period of time. Polishing can be performed satisfactorily while maintaining the speed, thereby making it very easy to control polishing, such as for the end point of polishing.
In addition, since the polishing slurry is supplied to the polishing region detected by the detection device and the polishing slurry is not supplied to the other polishing regions, the amount of the polishing slurry consumed without contributing to polishing can be reduced. The production cost can be reduced by minimizing the amount of waste polishing slurry by minimizing it. In particular, if the polishing slurry is supplied not only to the polishing area in contact with the material to be polished but also to the next polishing area, the polishing area moves from the polishing area in contact with the material to be polished to the next polishing area. When
To prevent a situation in which sufficient polishing slurry does not intervene between the polishing surface and the material to be polished due to a time delay until the control valve is opened and the polishing slurry is supplied onto the polishing surface. Thus, polishing controllability can be further improved.

[Brief description of the drawings]

FIG. 1 is a side sectional view showing an embodiment of a chemical mechanical polishing apparatus according to the present invention.

FIG. 2 is a bottom view of the chemical mechanical polishing apparatus shown in FIG.

FIG. 3 is a side sectional view showing another embodiment of the chemical mechanical polishing apparatus of the present invention.

FIG. 4 is a bottom view of the chemical mechanical polishing apparatus shown in FIG.

FIG. 5 is a perspective view showing a schematic configuration of a conventional chemical mechanical polishing apparatus.

6 (a) and 6 (b) are views for explaining the problem with the conventional apparatus shown in FIG. 5, wherein FIG. 6 (a) is a side sectional view showing an initial state of polishing, and FIG. It is a side sectional view showing a state after a middle term.

[Explanation of symbols]

10, 30 Chemical mechanical polishing equipment (CMP equipment) 1
1,32 rotary polishing machine 12,31 polishing pad 13 polishing head 15
Through-hole 16, 34 Piping 17, 35 Large piping 19 Regulator valve 20 Detector 22 Controller

Claims (4)

[Claims] A polishing slurry provided on a polishing surface of the polishing pad while rotating the polishing pad by rotating the rotary polishing disk. In a chemical mechanical polishing apparatus for chemically and mechanically polishing a material to be polished supplied and brought into contact with the polishing surface, a plurality of through-holes opened in the polishing surface are formed in the polishing pad with respect to the polishing surface. A polishing slurry supply passage communicating with the through hole of the polishing pad is provided on the rotary polishing machine, and the polishing slurry is polished from the polishing slurry supply source through the polishing slurry supply passage and the through hole of the polishing pad. A polishing surface of the polishing pad, wherein the polishing surface of the polishing pad is divided into a plurality of polishing regions in a rotational direction thereof, and the through-holes are formed on the polishing surface of the polishing pad. The polishing slurry is divided into the same number as the number of the polishing regions by forming a pair of openings located in the same polishing region, and the group of through holes divided is independent of the polishing slurry. An adjustment valve for adjusting the supply of the polishing slurry from the polishing slurry supply source to the through-hole is provided in each of the polishing slurry supply paths, and the polishing slurry is provided in the vicinity of the rotary polishing machine or the polishing pad. Detecting means for detecting a polishing region that comes into contact with the material to be polished when is rotating is provided.The detecting means has a set of through holes that open to the polishing region that comes into contact with the detected material to be polished, Control means for controlling an adjustment valve of the polishing slurry supply path is connected to supply polishing slurry from the polishing slurry supply source via the polishing slurry supply path. Chemical mechanical polishing apparatus characterized. A polishing surface of the polishing pad is divided into three or more polishing areas, and the control means sets a set of through-holes opening in the polishing area in contact with the material to be polished detected by the detection means. In addition, while supplying the polishing slurry from the polishing slurry supply source through the polishing slurry supply path, also a set of through-holes that open to the polishing region that comes into contact with the material to be polished next to the polishing region,
A control valve for the polishing slurry supply path is controlled so as to supply the polishing slurry from the polishing slurry supply source via the polishing slurry supply path, and the polishing slurry is supplied so as not to supply the polishing slurry to the other set of through holes. 2. The chemical mechanical polishing apparatus according to claim 1, wherein the chemical mechanical polishing apparatus controls an adjusting valve of the supply path. 3. A polishing machine comprising a rotary polishing machine and a polishing pad provided on one surface of the polishing machine, wherein a polishing slurry is applied to a polishing surface of the polishing pad while rotating the polishing pad by rotating the rotary polishing machine. A chemical mechanical polishing apparatus for chemically and mechanically polishing a material to be polished supplied and brought into contact with the polishing surface, wherein the polishing pad is formed of a porous material having a large number of continuous pores, and The rotary polishing machine is provided with a polishing slurry supply passage communicating with the continuous pores of the polishing pad so that the polishing slurry is supplied from the polishing slurry supply source to the polishing surface of the polishing pad through the polishing slurry supply passage and the continuous pores of the polishing pad. The polishing pad is divided into a plurality of polishing regions in the rotation direction, and the divided polishing regions are independent on the surface opposite to the polishing surface. An adjusting valve connected to the polishing slurry supply path, and an adjustment valve for adjusting the supply of the polishing slurry from the polishing slurry supply source to the continuous pores of the polishing pad is provided in each of the polishing slurry supply paths; And a detecting means for detecting a polishing area which comes into contact with the material to be polished when they are rotating. The detecting means comprises a polishing area which comes into contact with the detected material to be polished, A chemical mechanical polishing apparatus comprising a controller connected to control means for controlling an adjustment valve of the polishing slurry supply path so as to supply a polishing slurry from a slurry supply source via the polishing slurry supply path. 4. The polishing surface of the polishing pad is divided into three or more polishing areas, and the control means supplies the polishing slurry to a polishing area in contact with the material to be polished detected by the detection means. A polishing slurry is supplied from the polishing slurry supply source through the polishing slurry supply path to the polishing area that comes into contact with the material to be polished next to the polishing area while the polishing slurry is supplied from the source through the polishing slurry supply path. Controlling the regulating valve of the polishing slurry supply path so as to supply the polishing slurry, and controlling the regulating valve of the polishing slurry supply path so as not to supply the polishing slurry to other polishing areas. 3. The chemical mechanical polishing apparatus according to 3.