KR20010017688A - Apparatus for grinding wafer - Google Patents

Abstract

PURPOSE: An apparatus for polishing a wafer is provided to increase efficiency of a polishing process by using a uniform polishing rate of the wafer to improve planarization, and to reduce a quantity of slurry consumed in a polishing process. CONSTITUTION: A wafer(30) can be settled on a pad(10) which revolves by a revolving axis(10a) installed under the pad. A head(20) applies pressure toward the pad, and revolves while holding the wafer settled on the pad. A slurry supplying unit supplies slurry and helps to polish a front surface of the wafer. The slurry supply unit includes a pipe(40) and a plurality of holes(50). The pipe penetrates the revolving axis of the pad. The holes are connected to the pipe and supply the slurry induced through the pipe to an upper surface of the pad.

Description

Wafer Polishing Machine {APPARATUS FOR GRINDING WAFER}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer polishing apparatus used for planarizing the entire surface of a wafer in a semiconductor manufacturing process. More particularly, the present invention relates to a wafer polishing apparatus for improving the efficiency of the process by improving the planarization according to a constant polishing rate of the wafer. It is about.

In the conventional wafer polishing apparatus, as shown in FIGS. 1A and 1B, a pad 1 and a wafer 3 for polishing the wafer 3 while rotating the wafer 3 are seated and rotated. A slurry supply port for efficiently polishing the front surface of the wafer 3 by supplying a head 2 for holding and rotating and simultaneously applying pressure to the pad 1 and different chemicals according to each film type. It consists of (4).

Referring to the operation of the prior art as follows.

When a slurry is supplied from the slurry supply port 4, the wafer 3 is rotated while the back surface is in close contact with the head 2, and at the same time, a predetermined pressure is applied in the direction of the pad 1 to the wafer 3. The front face is in close contact with the pad 1.

At this time, the pad 1 is also rotated at a constant speed in the same direction as the head 2 and the slurry is supplied to the pad 1 to penetrate from the edge of the wafer 3 to penetrate to the middle part.

As a result, the pad 1, the head 2 and the slurry grind the entire surface of the wafer 3. According to the conventional grinding technique, as the slurry penetrates from the edge of the wafer 3, There was a big disadvantage that the edges had a high removal rate and thus the flatness of the wafer 3 was not constant.

Therefore, since the flatness of the center and the edge of the wafer 3 is not constant, it is not easy to apply after the mechanical and chemical polishing process, and the deposition of the TIOS film, which is a process before grinding, has to be thickened to improve the planarization.

In addition, the above problems have a problem that the throughput of the wafer 3 to be polished is reduced, the amount of slurry used is increased, and the life of the pad 1, which is a consumable part of the grinding device, is shortened.

In order to solve the above problems, the present invention provides a pad that the wafer can be seated on and rotated by a rotating shaft formed at the bottom thereof, a head that holds and rotates the wafer seated on the pad, and simultaneously applies pressure to the pad, and a slurry. In the wafer polishing apparatus comprising a slurry supply port for supplying the polishing of the front surface of the wafer, the slurry supply port is a tube formed to penetrate through the rotation axis of the pad, the slurry supply port is in communication with the tube flows through the tube Provided is a wafer polishing apparatus comprising a plurality of holes formed to supply a slurry to an upper surface of a pad.

1A is a front view schematically showing the configuration of a conventional wafer polishing apparatus;

1B is a plan view schematically showing a conventional wafer polishing apparatus;

2A is a cross-sectional view schematically showing the configuration of the wafer polishing apparatus of the present invention;

2B is a plan view schematically showing a wafer polishing apparatus of the present invention;

* Description of the symbols for the main parts of the drawings *

10: pad 10a: rotation axis

20: head 30: wafer

40: tube 50: hall

60: home

Hereinafter, described in detail with reference to the accompanying drawings of the present invention.

2A and 2B, the wafer polishing apparatus of the present invention holds and rotates the pad 10 and the wafer 30 for polishing the wafer 30 while the wafer 30 is seated and rotated. At the same time, it consists of a head 20 for applying pressure to the pad 10 and a slurry supply port which is supplied with different chemicals depending on the type of each film to help the polishing of the entire surface of the wafer 30 efficiently. The slurry supply port is formed in the pad 10, and the tube 40 is formed to penetrate the inside of the rotating shaft 10a of the pad 10, and the tube 40 communicates with the tube 40. It consists of a plurality of holes 50 formed to supply the slurry introduced through the upper surface of the pad (10).

As shown in FIG. 2B, the plurality of holes 50 are radially formed on the upper surface of the pad 10, and formed in the grooves 60 at regular intervals to even the wafer 30. Allow grinding.

The operation of the present invention will be described as follows.

First, when the slurry is introduced through the tube 40, the supplied slurry is discharged to the upper surface of the pad 10 through the hole 50 communicating with the tube 40, and the wafer 30 is the head 20. At the same time, the back surface is in close contact with the pad 10, and a constant pressure is applied toward the pad 10 so that the front surface of the wafer 30 is in close contact with the pad 10.

At this time, the pad 10 also rotates at a constant speed in the same direction as the head 20, and the slurry constantly penetrates the entire surface of the wafer 30.

Accordingly, the pad 10, the head 20, and the slurry are in harmony to grind the entire surface of the wafer 30. According to the technique of the present invention, the slurry 30 is formed through the holes 50 formed at the predetermined intervals. Since the entire area of the front surface of the wafer 30 is uniformly supplied, the entire portion of the wafer 30 is ground at a constant ratio, thereby achieving good flatness grinding.

That is, according to the wafer polishing apparatus of the present invention, there is an advantage that the flatness of the edge and the center portion of the wafer 30 is significantly improved compared with the prior art.

According to the present invention as described above, even if the thickness of the TioS before the grinding process is appropriately thin, uniform front grinding is possible, and the consumption of the slurry used during grinding is not only low, but also has the effect of extending the life of the pad as a consumable part.

In addition, as the operation rate of the equipment is increased, the throughput is improved, and thus, the cost of production is reduced.

In addition, it is possible to ultimately obtain a uniform flatness of the wafer to facilitate the application to the post-grinding process.

Claims (2)

Supplying a pad to which the wafer is seated and rotated by a rotating shaft formed in the lower part, a head that grasps and rotates the wafer seated on the pad, and simultaneously applies pressure to the pad, and supplies slurry to help polish the entire surface of the wafer. In the wafer polishing apparatus comprising a sphere, the slurry supply port is formed so as to penetrate the axis of rotation of the pad, the tube in communication with the tube is formed to supply the slurry flowing through the tube to the upper surface of the pad Wafer polishing apparatus comprising a plurality of holes. The wafer polishing apparatus according to claim 1, wherein the holes are formed at regular intervals in grooves formed radially on the upper surface of the pad so that the supply of the slurry is made constant on the entire surface of the wafer.