CN113066906A - 一种降低perc电池片光致衰减的方法 - Google Patents
一种降低perc电池片光致衰减的方法 Download PDFInfo
- Publication number
- CN113066906A CN113066906A CN202110448896.XA CN202110448896A CN113066906A CN 113066906 A CN113066906 A CN 113066906A CN 202110448896 A CN202110448896 A CN 202110448896A CN 113066906 A CN113066906 A CN 113066906A
- Authority
- CN
- China
- Prior art keywords
- perc
- cell
- battery piece
- treatment
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 title claims abstract description 65
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 title claims abstract 43
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 title claims abstract 43
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 title claims abstract 43
- 238000002347 injection Methods 0.000 claims abstract description 98
- 239000007924 injection Substances 0.000 claims abstract description 98
- 238000010438 heat treatment Methods 0.000 claims abstract description 74
- 238000001816 cooling Methods 0.000 claims abstract description 26
- 238000005286 illumination Methods 0.000 claims abstract description 11
- 230000015556 catabolic process Effects 0.000 claims description 9
- 238000006731 degradation reaction Methods 0.000 claims description 9
- 238000001782 photodegradation Methods 0.000 claims 1
- 238000006243 chemical reaction Methods 0.000 abstract description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 7
- 238000012545 processing Methods 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 7
- 239000010703 silicon Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 238000012360 testing method Methods 0.000 description 4
- 239000000969 carrier Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000002161 passivation Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000007547 defect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Primary Cells (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110448896.XA CN113066906A (zh) | 2021-04-25 | 2021-04-25 | 一种降低perc电池片光致衰减的方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110448896.XA CN113066906A (zh) | 2021-04-25 | 2021-04-25 | 一种降低perc电池片光致衰减的方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
CN113066906A true CN113066906A (zh) | 2021-07-02 |
Family
ID=76567688
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110448896.XA Pending CN113066906A (zh) | 2021-04-25 | 2021-04-25 | 一种降低perc电池片光致衰减的方法 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN113066906A (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114613669A (zh) * | 2022-03-04 | 2022-06-10 | 晶科能源股份有限公司 | 修复电池的方法和装置 |
CN117316802A (zh) * | 2023-11-29 | 2023-12-29 | 龙焱能源科技(杭州)有限公司 | 电池组件预处理设备及电池组件预处理方法 |
-
2021
- 2021-04-25 CN CN202110448896.XA patent/CN113066906A/zh active Pending
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN114613669A (zh) * | 2022-03-04 | 2022-06-10 | 晶科能源股份有限公司 | 修复电池的方法和装置 |
CN117316802A (zh) * | 2023-11-29 | 2023-12-29 | 龙焱能源科技(杭州)有限公司 | 电池组件预处理设备及电池组件预处理方法 |
CN117316802B (zh) * | 2023-11-29 | 2024-03-08 | 龙焱能源科技(杭州)有限公司 | 电池组件预处理设备及电池组件预处理方法 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN100490184C (zh) | 用于形成cis型薄膜太阳能电池的光吸收层的方法 | |
CN113066906A (zh) | 一种降低perc电池片光致衰减的方法 | |
CN214411229U (zh) | 一种降低perc电池片光致衰减装置 | |
US4539431A (en) | Pulse anneal method for solar cell | |
US9780252B2 (en) | Method and apparatus for reduction of solar cell LID | |
CN107731966B (zh) | 一种光伏组件的封装方法 | |
CN1755949A (zh) | 光生伏打装置 | |
KR20100078814A (ko) | 고효율 태양전지용 레이저 소성장치 및 고효율 태양전지 제조방법 | |
KR102571109B1 (ko) | 실리콘 재료의 가공 방법 | |
WO2021004521A1 (zh) | 一种异质结电池氢钝化方法、氢钝化装置、电池、电池组件及太阳能供电站 | |
CN114503289A (zh) | 用于处理在异质结光伏电池的制造过程中获得的堆叠的方法 | |
CN113206172A (zh) | 切片硅异质结电池及制备方法、太阳能电池组件 | |
US20210376183A1 (en) | A method for improving the performance of a heterojunction solar cell | |
CN111564523A (zh) | 一种抑制多晶硅太阳电池在高温下光致衰减的方法 | |
CN113161443A (zh) | 一种太阳能电池退火设备及退火方法 | |
CN116387150A (zh) | 硅片吸杂方法及太阳电池的制备方法 | |
Ye et al. | Study on the Electrical Injection Regeneration of Industrialized B‐Doped Czochralski Silicon PERC Solar Cells | |
JP2002536835A (ja) | 太陽電池の製造方法 | |
CN215118834U (zh) | 切片太阳能电池光注入退火装置 | |
CN105405926B (zh) | 一种硅异质结太阳能电池、其退火方法及其制备方法 | |
CN109728109B (zh) | 晶体硅双面电池及该晶体硅双面电池的热处理方法 | |
US20140370641A1 (en) | Processing photovoltaic substrates | |
CN116864423B (zh) | 一种太阳能电池片分档系统及其使用方法 | |
KR101173625B1 (ko) | 태양전지의 선택적 에미터 형성방법 및 선택적 에미터형성장치 | |
CN220604705U (zh) | 光伏太阳能电池的氢钝化改善装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220517 Address after: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Applicant after: Zhengtai Xinneng Technology Co.,Ltd. Address before: No.1335 Bin'an Road, Binjiang District, Hangzhou City, Zhejiang Province Applicant before: CHINT SOLAR (ZHEJIANG) Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
CB02 | Change of applicant information |
Address after: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Applicant after: Zhengtai Xinneng Technology Co.,Ltd. Address before: 314400 No. 1 Jisheng Road, Jiaxing City, Zhejiang Province, Jianshan New District, Haining City Applicant before: Zhengtai Xinneng Technology Co.,Ltd. |
|
CB02 | Change of applicant information |