CN113054826A - High-power module - Google Patents

High-power module Download PDF

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Publication number
CN113054826A
CN113054826A CN201911367057.4A CN201911367057A CN113054826A CN 113054826 A CN113054826 A CN 113054826A CN 201911367057 A CN201911367057 A CN 201911367057A CN 113054826 A CN113054826 A CN 113054826A
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CN
China
Prior art keywords
positive electrode
metal region
group
pins
width
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Withdrawn
Application number
CN201911367057.4A
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Chinese (zh)
Inventor
吴至强
彭明燦
谢士锴
林立松
何政翰
林宇洲
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Industrial Technology Research Institute ITRI
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Industrial Technology Research Institute ITRI
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Priority to CN201911367057.4A priority Critical patent/CN113054826A/en
Publication of CN113054826A publication Critical patent/CN113054826A/en
Withdrawn legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/32—Means for protecting converters other than automatic disconnection
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/44—Circuits or arrangements for compensating for electromagnetic interference in converters or inverters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components

Abstract

A high-power module comprises a substrate, a plurality of first power chips, a plurality of second power chips, a positive electrode plate and a negative electrode plate. The substrate comprises a first metal area, a second metal area and a third metal area arranged between the first metal area and the second metal area. The first power chips are arranged in the third metal area and connected to the first metal area through a plurality of first connecting pieces. The second power chips are arranged in the second metal area and connected to the third metal area through a plurality of second connecting pieces. The positive electrode plate is in a C-shaped annular shape and is connected to the first metal area. The negative electrode plate is in a C-shaped annular shape and is connected to the second metal area, and the opening direction of the negative electrode plate is opposite to the opening direction of the positive electrode plate. The output electrode plate is connected to one end of the third metal area.

Description

High-power module
Technical Field
The present invention relates to a high power module, and more particularly, to a high power module with low stray inductance and uniform current density.
Background
In order to achieve high current output, the high power module needs to integrate a plurality of power chips, so that the high power module can be applied to various vehicles and other related equipment, such as electric vehicles, motorcycles, buses, trucks, charging stations and the like. However, when applied to a power inverter, the stray inductance of the commutation loop will cause voltage Overshoot (Overshoot) during switching, and the oscillation thereof will generate electromagnetic interference (EMI) and severe switching loss, so that the power chip is easily damaged thereby.
The existing high-power module has poor circuit design, such as the position of a power chip and the design of an electrode plate, so that the stray inductance of the existing high-power module is difficult to reach below 10nH, and therefore, the existing high-power module cannot be effectively applied to various vehicles and other related equipment.
In addition, the current density of the conventional high power module is not uniform due to poor circuit design and structural design, which further affects the performance of the conventional high power module.
Therefore, how to provide a high power module, which can effectively improve various limitations of the existing high power module, has become an issue.
Disclosure of Invention
In view of the above-mentioned problems of the prior art, an object of the present invention is to provide a high power module to solve the problems of high stray inductance and non-uniform current density of the prior art.
According to one aspect of the present invention, a high power module is provided, which includes a substrate, a plurality of first power chips, a plurality of second power chips, a positive electrode plate, a negative electrode plate, and an output electrode plate. The substrate comprises a first metal area, a second metal area and a third metal area arranged between the first metal area and the second metal area. The first power chips are arranged in the third metal area and connected to the second metal area through a plurality of first connecting pieces. The second power chips are arranged in the second metal area and connected to the third metal area through a plurality of second connecting pieces. The positive electrode plate is in a C-shaped annular shape and is connected to the first metal area. The negative electrode plate is in a C-shaped annular shape and is connected to the second metal area, and the opening direction of the negative electrode plate is opposite to the opening direction of the positive electrode plate. The output electrode plate is connected to one end of the third metal area. The output electrode plate is connected to one end of the third metal area.
The invention is described in detail below with reference to the drawings and specific examples, but the invention is not limited thereto.
Drawings
Fig. 1A to 1D are structural diagrams of a high power module according to a first embodiment of the present invention;
fig. 2A to 2B are structural diagrams illustrating the integration of the high power module 1 and the gate driving circuit according to the first embodiment of the invention;
fig. 3 is a structural diagram of a first power chip of a high power module according to a first embodiment of the present invention;
fig. 4A is a perspective view of the positive/negative electrode plate of the high power module of the first embodiment of the present invention;
fig. 4B is a cross-sectional view of the positive/negative electrode plate of the high power module of the first embodiment of the present invention;
fig. 5A to 5C are perspective views of an output terminal electrode plate of the high power module according to the first embodiment of the present invention;
fig. 6A is a side view of a high power module of a first embodiment of the present invention;
fig. 6B is a schematic diagram of the ac phase current path of the high power module of the first embodiment of the present invention;
fig. 6C is a schematic diagram of the dc phase current path of the high power module of the first embodiment of the present invention;
fig. 7A to 7B are graphs showing simulation results of the high power module according to the first embodiment of the present invention;
fig. 8A to 8C are structural views of a high power module according to a second embodiment of the present invention;
fig. 9 is a perspective view of the positive electrode sheet of the high power module of the second embodiment of the present invention;
fig. 10 is a perspective view of the negative electrode plate of the high power module of the second embodiment of the present invention;
fig. 11A to 11C are structural views of a high power module according to a third embodiment of the present invention;
fig. 12A to 12B are partially enlarged views of the positive electrode sheet of the high power module according to the third embodiment of the present invention.
Wherein the reference numerals
1. 2, 3 high power module d drain
10. 20, 30 substrates G1 first group
101. 201, 202 first metal region G2 second group
1011 third group of first grooves G3
102. 202, 302 second metal region G4 fourth group
1021 the opening of the second groove O1 positive electrode sheet faces
103. 203, 303 third metal area O2 is open towards the negative electrode plate
1031 third grooves S1, S2 spacing
104. 204, 304 fourth metal area B adjacent to the first power chip
1041 width of the positive X-pole leg of the fourth groove
105. 205, 305 width of the output terminal plate of the fifth metal area J
1051 fifth groove F width of first power chip, second power chip
106-1, 206-1, 306-1 first upper isolation region L length of first power chip, length of second power chip
106-2, 206-2, 306-2 first lower isolation region M the width of the central recess of the positive electrode sheet 13
107-1, 207-1, 307-1 second upper isolation region W the width of the first metal region
107-2, 207-2, 307-2 second lower isolation region Pt1 width of one end of positive terminal
108 width of the other end of the positive terminal of the gate driver circuit Pt2
11-1 to 11-6, 21-1 to 21-6, 31-1 to 31-6 Ut1 positive terminal width-power chip
12-1 to 12-6, 22-1 to 22-6, 32-1 to 32-6 Un1 positive electrode pin width two power chip
13. 23, 33 width of positive electrode sheet P
131. 231, 331 positive terminal Pt3 negative terminal one end width
1311. 2311, 3311 width of the other end of the lock hole Pt4 negative terminal
132. 232, 332 width of connection Ut2 negative terminal
133-1 to 133-6, 233-1 to 233-6, and Un2 negative electrode pin width
333-1 ~ 333-6 positive electrode pin
14. 24, 34 negative electrode sheet P' width of negative electrode sheet
141. 241, 341 negative terminal Y output terminal width
1411. 2411, 3411 width of the output terminal of the lock hole Ku
142. 242, 342 connecting part Kd output terminal pin width
143-1～143-6、243-1～243-6、 R1～R6、R1’～R6’、Z1a～Z6a、Z1b～Z6b、
343-1 to 343-6 positive electrode pins Z1 to Z6, Z1 'to Z6' effective channel widths
15. Diameter of holes of electrode plates Dm 1-Dm 6 at output ends of 15', 25 and 35
Center shaft of 151' output terminal PA positive electrode piece
1511. 1511', 2511, 3511 lock hole NA negative electrode plate central shaft
Symmetry axis of 152' connection SA high-power module
153' output terminal pin
C1 first connecting piece
C2 second connecting piece
g grid
s source electrode
Detailed Description
Embodiments of the high power module according to the present invention will be described below with reference to the accompanying drawings, in which components may be shown exaggerated or reduced in size or scale for the sake of clarity and convenience in the drawing description. In the following description and/or claims, when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may be present; when an element is referred to as being "directly connected" or "directly coupled" to another element, there are no intervening elements present, and other words used to describe the relationship between the elements or layers should be interpreted in the same manner. For ease of understanding, like elements in the following embodiments are illustrated with like reference numerals.
Please refer to fig. 1A to fig. 1D, which are structural diagrams of a high power module 1 according to a first embodiment of the invention. As shown in fig. 1A, the high power module 1 includes a substrate 10, 6 first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6, 6 second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6, a positive electrode tab 13, a negative electrode tab 14, and an output electrode tab 15.
The substrate 10 includes a first metal region 101, a second metal region 102, a third metal region 103, a fourth metal region 104, a fifth metal region 105, a first upper isolation region 106-1, a first lower isolation region 106-2, a second upper isolation region 107-1, and a second lower isolation region 107-2. The first metal area 101, the second metal area 102 and the third metal area 103 are rectangular blocks. The third metal region 103 is disposed between the first metal region 101 and the second metal region 102. The fourth metal region 104 is disposed between the first metal region 101 and the third metal region 103, and is connected to the gates of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6; the first upper isolation region 106-1 and the first lower isolation region 106-2 are respectively disposed on two sides of the fourth metal region 104 to isolate the fourth metal region 104 from the first metal region 101 and the third metal region 103. The fifth metal region 105 is disposed between the second metal region 102 and the third metal region 103, and is connected to the gates of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, and 12-6; the second upper isolation region 107-1 and the second lower isolation region 107-2 are disposed on two sides of the fifth metal region 105, respectively, to isolate the fifth metal region 105 from the third metal region 103 and the second metal region 102.
The fourth metal region 104 and the fifth metal region 105 are connected to an external gate driving circuit (not shown). Therefore, the gates of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6 can be connected to the external gate driving circuit through the fourth metal region 104, and the gates of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, and 12-6 can also be connected to the external gate driving circuit through the fifth metal region 105.
Fig. 2A and fig. 2B are structural diagrams illustrating an integration of the high power module 1 and the gate driving circuit 108 according to the first embodiment of the invention. As shown in fig. 2A, the first metal region 101 comprises a first recess 1011, the second metal region 102 comprises a second recess 1021, the third metal region 103 comprises a third recess 1031, the fourth metal region 104 comprises a fourth recess 1041, and the fifth metal region 105 comprises a fifth recess 1051. Therefore, as shown in fig. 2B, the gate driving circuit 108 can be disposed in the space formed by the connection of the first recess 1011, the second recess 1021, the third recess 1031, the fourth recess 1041 and the fifth recess 1051, and the gate driving circuit 108 and the traces thereof are fixed by a packaging technique, so that the gate driving circuit 108 can be stably fixed on the substrate 10. With the structure, the high-power module 1 does not need to be connected to an external gate driving circuit, so that the volume of the high-power module 1 can be greatly reduced, and the application of the high-power module is wider. In another embodiment, the substrate 10 may include a groove, and the gate driving circuit 108 may be disposed in the groove, such that the gate driving circuit 108 is covered by the substrate 10 and the first to fifth metal regions 101 to 105.
As shown in fig. 1A, the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6 are disposed on the third metal region 103 and connected to the first metal region 101 through the first connection C1. Therefore, the first connection C1 crosses the first metal region 101 and the third metal region 103, and crosses the fourth metal region 104, and bridges the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 and the first metal region 101, so that the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 can be arranged in a line to form an array. In the present embodiment, the gate g (fig. 3) of the first power chip 11-1 is connected to the fourth metal region 104 by a wire and then connected to an external gate driving circuit. Similarly, the first power chips 11-2, 11-3, 11-4, 11-5, and 11-6 also have the above structure.
Please refer to fig. 3, which is a structural diagram of the first power chip 11-1, and also refer to fig. 1A. As shown, the source s of the first power chip 11-1 is disposed on the lower surface thereof and connected to the third metal region 103, and the drain d of the first power chip 11-1 is disposed on the upper surface thereof and connected to the first connection C1; the first power chips 11-2, 11-3, 11-4, 11-5, and 11-6 also have the above-described structure. Similarly, the sources s of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6 are connected to the third metal region 103, the drains d of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6 are disposed on the upper surface thereof, one end of each first connection C1 is connected to each drain d and connected to the first metal region 101 through the first connection C1, and the other end of each first connection C1 is connected to the first metal region 101, so that the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6 are connected in parallel. In one embodiment, the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 may be connected to the third metal region 103 by Ribbon Bonding (Ribbon Bonding), sheet metal Bonding (Clip Bonding), Wire Bonding (Wire Bonding), Beam or Beam Lead (Beam Lead), Surface Mount Technology (SMT), Flip Chip (Flip-Chip), Lead Frame (Lead), Ball Grid Array (BGA), or the like, and the first connection C1 may be a pound Wire, copper sheet, or other metal sheet. In this embodiment, the first power chips 11-1, 11-2, 11-3, 11-4 are connected to the third metal area 103 by means of a bond wire or a metal sheet bond.
As shown in fig. 1A, the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 are disposed on the second metal region 102 and connected to the third metal region 103 through a second connection C2. Therefore, the second connection C2 crosses the second metal region 102 and the third metal region 103, and crosses the fifth metal region 105, and bridges the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 and the third metal region 103, so that the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 can be arranged in a straight line to form another array, which is symmetrical to the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6. Similarly, in the present embodiment, the gate g of the second power chip 12-1 is connected to the fifth metal region 105 by a wire and then connected to an external gate driving circuit. Similarly, the second power chips 12-2, 12-3, 12-4, 12-5, 12-6 also have the above structure. Since the sources s of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 are connected to the third metal region 103 (the side view of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 is similar to fig. 3), the drains d of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 are disposed on the upper surface thereof, one end of each second connection C2 is connected to the drains d and is connected to the third metal region 103 through the second connection C2, and the other end of each second connection C2 is connected to the third metal region 103, the second power chips 12-1, 12-2, 12-3, 12-4, 12-5 and 12-6 are in parallel connection. As shown in FIG. 1A, the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6 are arranged in a straight line and form an array, and the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, and 12-6 are also arranged in a straight line and form another array. Therefore, the array formed by the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 can be parallel to the array formed by the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6. Similarly, the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 can be connected to the second metal region 102 by ribbon bonding, sheet metal bonding, pound wire bonding, bundled or beam leads, surface mount technology, flip chip, lead frame, ball grid array, or the like. In this embodiment, the second power chips 12-1, 12-2, 12-3, 12-4 are connected to the second metal region 102 by means of a bond wire or metal bonding. In one embodiment, the first Power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 and the second Power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 may be Silicon Carbide Power switches, such as Silicon Carbide Power MOSFETs (CPM 3-0900;, 900V/196A/10mohm) available from Wolfspeed, Inc., or other similar or higher specification components.
Please refer to fig. 4A and 4B, which are a perspective view and a cross-sectional view of the positive electrode sheet 13/the negative electrode sheet 14 of the high power module 1 according to the first embodiment of the invention, and refer to fig. 1C to 1D. The positive electrode plate 13 is connected to the first metal region 101 and disposed on one side of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6. As shown in fig. 4A and 4B, the positive electrode sheet 13 includes a positive electrode terminal 131, a connection portion 132, and 6 positive electrode pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6. The positive electrode terminal 131 is connected to the positive electrode leads 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 through a connecting portion 132, so that the positive electrode tab 13 is formed in a C-shaped ring shape. The connecting portion 132 can be regarded as a side wall, the positive electrode pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and the positive electrode terminal 131 are respectively located on two planes, the two planes are parallel in space, and the positive electrode pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 correspond to 1 positive electrode terminal 131; as shown in fig. 4B (cross-sectional view), the width Ut1 of the positive terminal 131 is greater than the width Un1 of the positive leg 133-1. The positive electrode leads 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 are divided into two groups, i.e., a first group G1 and a second group G2; the first group G1 and the second group G2 are respectively disposed on two sides of the central axis PA of the positive electrode sheet 13. The first group G1 includes the positive electrode leads 133-1, 133-2, 133-3, and the positive electrode leads 133-1, 133-2, 133-3 are disposed at equal intervals, which is S1; similarly, the second group G2 includes the positive electrode leads 133-4, 133-5, 133-6, and the positive electrode leads 133-4, 133-5, 133-6 are also disposed at equal intervals, which is also S1. In addition, the distance between the first group G1 and the second group G2 is S2 (i.e., the distance between the positive pins 133-3 and 133-4), and S2 is greater than S1. The positive terminal 131 has a locking hole 1311, the locking hole 1311 is located at the central axis PA, and the positive terminal 131 can be electrically connected to an external circuit, so that current enters from the positive terminal 131, passes through the connecting portion 132, and then is shunted to the 6 positive pins 133-1, 133-2, 133-3, 133-4, 133-5, and 133-6. The width Pt1 of the end of the positive electrode terminal 131 connected to the connection portion 132 is equal to the width of the connection portion 132, and the width Pt1 of the end of the positive electrode terminal 131 connected to the connection portion 132 is equal to the width P of the positive electrode tab 14, as shown in fig. 1B; the width Pt2 of the other end of the positive terminal 131 is smaller than the width Pt 1; both sides of the positive electrode terminal 131 are formed in an arc shape. The positive pins 133-1, 133-2, 133-3, 133-4, 133-5, and 133-6 are directly contacted and connected to the first metal region 101, and the positions of the positive pins 133-1, 133-2, 133-3, 133-4, 133-5, and 133-6 correspond to the positions of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6, respectively. As can be seen from fig. 1A and 4B, the positive electrode sheet 13 is in a C-shaped loop shape, and the opening of the positive electrode sheet 13 faces away from the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6. In the present embodiment, the positive electrode leads 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 are substantially rectangular; in another embodiment, the positive electrode leads 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 may be square, trapezoidal, or other shapes.
Referring to fig. 4A, 4B and 1D, the negative electrode tab 14 is connected to the second metal region 102 and disposed on one side of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5 and 12-6. The structure of the negative electrode sheet 14 is the same as that of the positive electrode sheet 13; the negative electrode plate 14 includes a negative terminal 141, a connecting portion 142, and 6 negative pins 143-1, 143-2, 143-3, 143-4, 143-5, and 143-6. The negative terminal 141 is connected to the negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 through a connecting portion 142, so that the negative electrode 14 is in a C-ring shape. Similarly, the connecting portion 142 can be regarded as a side wall, the negative electrode pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 and the negative electrode terminal 141 are respectively located on two planes, and the two planes are parallel in space, and the negative electrode pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 correspond to 1 negative electrode terminal 141; as shown in fig. 4B (cross-sectional view), the width Ut2 of the negative terminal 141 is greater than the width Un2 of the negative pin 143-1. The negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 are also divided into two groups, i.e. a third group G3 and a fourth group G4; the third group G3 and the fourth group G4 are respectively disposed on two sides of the central axis NA of the negative electrode tab 14. The third group G3 includes the negative pins 143-1, 143-2, 143-3, and the negative pins 143-1, 143-2, 143-3 are disposed at equal intervals, and the interval is S1; similarly, the fourth group G4 includes the negative pins 143-4, 143-5, 143-6, and the negative pins 143-4, 143-5, 143-6 are also disposed at equal intervals, which is also S1. In addition, the distance between the third group G3 and the fourth group G4 is S2 (i.e., the distance between the cathode pins 143-3 and 143-4), and S2 is greater than S1. The negative terminal 141 has a locking hole 1411, the locking hole 1411 is located at the central axis NA, the negative terminal 141 can be electrically connected to an external circuit, and current can enter from the negative terminal 141 and flow through the connecting portion 142 to be divided into 6 negative pins 143-1, 143-2, 143-3, 143-4, 143-5, and 143-6. Similarly, the width Pt3 of the end of the negative terminal 141 connected to the connection portion 142 is equal to the width of the connection portion 142, and the width Pt3 of the end of the negative terminal 141 connected to the connection portion 142 is equal to the width P' of the negative electrode tab 14, as shown in fig. 1B; the width Pt4 of the other end of the negative terminal 141 is smaller than the width Pt 3; the negative electrode terminal 141 also has two arc-shaped sides. The negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 are directly contacted and connected to the second metal region 102, and the positions of the negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 correspond to the positions of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6, respectively. Similarly, the opening of the negative electrode sheet 14 faces away from the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, and 12-6, so that the negative electrode sheet 14 and the positive electrode sheet 13 are symmetrical to each other. In the present embodiment, the negative terminals 141 are substantially rectangular; in another embodiment, the negative terminals 141 can also be square, trapezoidal, or other different shapes.
As can be seen from the above, the positive electrode tab 13 and the negative electrode tab 14 of the high power module 1 of the present embodiment are not directly attached to the first metal region 101 and the second metal region 102, but contact the first metal region 101 and the second metal region 102 through the toe-shaped positive electrode pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and the toe-shaped negative electrode pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6, respectively. In addition, the numbers of the toe-shaped positive pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and the negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 also correspond to the numbers of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 and the numbers of the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6, respectively, so that the design can effectively reduce the stray inductance of the high power module 1. In one embodiment, each pin is aligned with each power chip.
Fig. 5A is a perspective view of an output electrode sheet 15 of the high power module 1 according to the first embodiment of the present invention, and fig. 1A is also referred to. As shown in fig. 1A, the output terminal pad 15 is connected to one end of the third metal region 103. As shown in fig. 5, the output electrode tab 15 is a flat metal sheet. In addition, the output terminal electrode sheet 15 also includes a lock hole 1511.
Fig. 5B and 5C are perspective and cross-sectional views of an output electrode sheet 15' of the high power module 1 according to the first embodiment of the invention. As shown in fig. 5B, the output-end electrode tab 15 of fig. 5A may also be replaced with an output-end electrode tab 15'. The output terminal electrode piece 15' may have a C-shaped ring shape, and the opening of the output terminal electrode piece 15 is perpendicular to the opening of the positive electrode sheet 13 and the opening of the negative electrode sheet 14. The output electrode tab 15 'includes an output terminal 151', a connecting portion 152 ', and an output pin 153'. The output terminal 151 ' is connected to the output pin 153 ' through the connection portion 152 '. In addition, the output terminal 151 'includes a locking hole 1511' and has a widened structure; that is, the width Y of the output terminal 151' is greater than the width F of one first power chip (or two second power chips) and is less than the width 2F of two first power chips (or two second power chips) (the width F of the first power chip or the second power chip is shown in fig. 1B), as shown in the following formula (1):
F<Y<2F.....................................................(1)
in addition, as shown in fig. 5C, the width Ku of the output terminal 151 'is larger than the width Kd of the output pin 153'. The output terminal 151 'and the output pin 153' are spatially parallel to each other.
Please refer to fig. 6A, fig. 6B and fig. 6C, which are a side view, a schematic diagram of an ac phase current path and a schematic diagram of a dc phase current path of the high power module 1 according to the first embodiment of the present invention. As shown in fig. 6A, the positive electrode sheet 13 and the negative electrode sheet 14 of the high power module 1 are in a C-ring shape, and the opening of the positive electrode sheet 13 faces to O1 and the opening of the negative electrode sheet 14 faces to O2 (i.e., the positive electrode sheet 13 and the negative electrode sheet 14 are placed back to back).
As shown in fig. 6B, arrows a1 and a2 respectively indicate the current paths of the positive electrode sheet 13 and the negative electrode sheet 14 in the ac phase (only some current paths are shown for clarity). The current path a1 of the positive electrode tab 13 is: positive terminal 131- > connecting portion 132- > positive pin 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 (shunted to 6 pins) > first metal region 101- > first connection C1- > first power chip 11-1, 11-2, 11-3, 11-4, 11-5, 11-6- > third metal region 103- > output electrode tab 15. As can be seen, the current path of the positive terminal 131 (to the left in the figure) is opposite to the current path of the positive pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 (to the right in the figure), so that the mutual inductance between the positive terminal 131 and the positive pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 is reduced, and the positive electrode tab 13 can achieve the reverse phase coupling. The current path a2 of negative electrode tab 14 is: the negative electrode terminal 141- > connecting part 142- > negative electrode pin 143-1, 143-2, 143-3, 143-4, 143-5, 143-6- > second metal region 102- > second power chip 12-1, 12-2, 12-3, 12-4, 12-5, 12-6- > second connecting part C2- > third metal region 103- > output electrode sheet 15. As can be seen from the figure, the current path (to the right in the figure) of the negative terminal 141 is opposite to the current paths (to the left in the figure) of the negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6, so that the mutual inductance between the negative terminal 141 and the negative pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 is reduced, and the negative electrode plate 14 can also achieve the reverse phase coupling.
As shown in fig. 6C, arrows a3 indicate current paths of the positive electrode tab 13 and the negative electrode tab 14 in the dc phase, respectively. The current paths of the positive electrode sheet 13 and the negative electrode sheet 14 in the dc phase are: the positive terminal 131- > connecting portion 132- > the positive pin 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 (shunted to 6 pins) > the first metal region 101- > the first connection C1- > the first power chip 11-1, 11-2, 11-3, 11-4, 11-5, 11-6- > the third metal region 103- > the second connection C2- > the second power chip 12-1, 12-2, 12-3, 12-4, 12-5, 12-6- > second metal region 102- > negative pin 143-1, 143-2, 143-3, 143-4, 143-5, 143-6(6 pins converge to 1 terminal) - > connection 142- > negative terminal 141. As can be seen, the current path of the positive terminal 131 (to the left in the figure) is opposite to the current path of the positive pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 (to the right in the figure), so that the mutual inductance between the positive terminal 131 and the positive pin 133 is reduced, and the positive electrode tab 13 can achieve the reverse phase coupling. Similarly, the negative electrode sheet 14 can achieve reverse coupling.
Therefore, the positive electrode sheet 13 and the negative electrode sheet 14 exhibit reverse phase coupling in both the ac phase and the dc phase, so that the stray inductance of the high power module 1 can be effectively reduced.
As shown in fig. 1B, in the present embodiment, the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, and 11-6 correspond to the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, and 12-6; the positive electrode sheet 13 and the negative electrode sheet 14 have a spacing K1 therebetween, and the positive terminal 131 and the negative terminal 141 do not overlap in a vertical direction (a direction perpendicular to the substrate 10, which is equivalent to a normal vector of the substrate 10). In addition, the opening direction O1 of the positive electrode tab 13 is opposite to the opening direction O2 of the negative electrode tab 14 (as shown in fig. 6A), and both the positive electrode tab 13 and the negative electrode tab 14 can achieve reverse phase coupling, as shown in fig. 6B and 6C. Through the above design, the mutual inductance of the positive electrode sheet 13 and the mutual inductance of the negative electrode sheet 14 can be reduced, thereby reducing the stray inductance of the high power module 1.
The high power module 1 of the present embodiment has a special structural design and size requirement. As shown in fig. 1B to fig. 1D (see fig. 1A as well), the width X of each of the positive electrode pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and the negative electrode pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6 is greater than or equal to the width F of the corresponding first power chip 11-1, 11-2, 11-3, 11-4, 11-5, 11-6, and the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6, but less than the sum of the width F and the distance B between two adjacent chips, as shown in the following formula (2):
F≦X<F+B.......................................(2)
wherein, X represents the width of the positive pole pins 133-1, 133-2, 133-3, 133-4, 133-5, 133-6 and the negative pole pins 143-1, 143-2, 143-3, 143-4, 143-5, 143-6; f represents the width of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6, the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6; b denotes a distance between two adjacent first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6 or second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6.
In addition, the width P of the positive electrode sheet 13 is greater than the sum of the width F of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6, the width M of the central recess of the positive electrode sheet 13 and the distance B between the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6, and is less than the width W of the first metal region 101, as shown in the following formula (3):
W>P>(N*F+M+(N-2)*B)..........................(3)
where P denotes the width of the positive electrode sheet 13; w represents the width of the first metal region 101; n represents the number of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5 and 11-6; f represents the width of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5 and 11-6; m denotes the width of the central groove of the positive electrode sheet 13; b denotes a pitch between two adjacent first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6.
The negative electrode sheet 14 and the second power chips 12-1, 12-2, 12-3, 12-4, 12-5, 12-6 also have similar structures, and gift presented to a senior at one's first visit as a mark of esteem is not added here.
In addition, the high power module 1 of the present embodiment further achieves the effect of reducing the stray inductance through the widened positive terminal 131, the widened negative terminal 141, and the widened output electrode sheet 15. The negative electrode terminal 141 also has a structure similar to that of the positive electrode terminal 131, and therefore gift presented to a senior at one's first visit as a mark of esteem is not added.
The width Pt1 of the end of the positive electrode terminal 131 connected to the connection portion 132 is equal to the width P of the positive electrode sheet 14; the width Pt2 of the other end of the positive terminal 131 is smaller than the width Pt 1; the width Pt2 is greater than or equal to the width Pt1 minus the width F of the two first power chips, as shown in the following formula (4):
Pt1(＝W)>Pt2≧(Pt1-2F)........................(4)
where Pt2 denotes the width of the other end of the positive electrode terminal 131; pt1 represents the width of the end of the positive electrode terminal 131 connected to the connection portion 132; f denotes the width of the first power chips 11-1, 11-2, 11-3, 11-4, 11-5, 11-6. Negative terminal 141 also has a similar structure, and therefore gift presented to a senior at one's first visit as a mark of esteem is not added here.
The width J of the output terminal electrode sheet 15 is greater than the width F of one first power chip (or second power chip) and less than the width 2F of two first power chips (or two second power chips), as shown in the following formula (5):
F<J<2F.................................................(5)
through the circuit design and the structural design, the high-power module 1 can effectively reduce stray electricity under the switching frequency of 10MHz to be less than 10nH, so that voltage Overshoot (overvoltage) and electromagnetic interference (EMI) can be effectively avoided, switching loss can be effectively reduced, the high-power module 1 can have longer service life, and better efficiency is achieved.
Therefore, the high power module 1 can be effectively applied to various vehicles and other related devices. In this embodiment, a simulation experiment is performed by using a Q3D software (a stray inductance extraction software), and the experimental data of the simulation experiment is shown in table 1 as follows:
TABLE 1
Figure RE-GDA0002410948710000131
From the above experimental data, the structure and circuit design of the high power module 1 of the present embodiment can actually achieve the effect of effectively reducing the stray inductance, which is lower than 10 nH.
Fig. 7A and 7B are simulation result diagrams of the high power module 1 according to the first embodiment of the present invention, and fig. 1A is also shown.
Fig. 7A shows the current density simulation result obtained by simulating the ac phase current path using the high power module 1 of the first embodiment, and this simulation result shows the current path shown by the arrow a2 in fig. 6B (i.e., negative electrode tab 14- > output terminal tab 15). Likewise, the red areas represent current paths with higher current densities (as indicated by the circles in the figure); as is apparent from fig. 7A, the second connecting members C2 and the third metal regions 103 have uniformly distributed red regions, so that the second connecting members C2 and the third metal regions 103 have higher current densities and can achieve uniform current densities; in addition, the second connectors C2 and the third metal region 103 have higher current density; when the high power module 1 is operated below 10kw, the current density of the second connection C2 and the third metal region 103 can still be kept below 20A/mm 2.
Fig. 7B shows a current density simulation result obtained by simulating a dc phase current path (fig. 6C) using the high power module 1 of the first embodiment. The red areas represent current paths with higher current densities (as indicated by the circles in the figure); as is apparent from fig. 7B, the current density of the first connection C1 and the second connection C2 is high, but the current density of the second connection C2 and the third metal region 103 can still be kept below 20A/mm2 when the high power module 1 is operated below 10 kw.
As can be seen from the above, the current density from the positive electrode tab 13 to the negative electrode terminal 141 of the high power module 1 is surely equal to or lower than the current density (20A/mm2) (when the high power module 1 operates at or lower than 10 kw), so that the temperature of the third metal region 103 can be maintained within an acceptable range (100 ℃), and the high power module 1 will not malfunction due to overheating. Generally, when the high power module 1 operates below 10kw, the current densities of the positive terminal 131, the negative terminal 141 and the output electrode tab 15 of the high power module 1 are all below 20A/mm 2.
Of course, the above description is only exemplary, and the circuit, structure and coordination relationship of each component of the high power module 1 can be changed according to the actual requirement, and the invention is not limited thereto.
Please refer to fig. 8A, fig. 8B and fig. 8C, which are structural diagrams of a high power module 2 according to a second embodiment of the present invention. As shown in fig. 8A, the high power module 2 includes a substrate 20, 6 first power chips 21-1, 21-2, 21-3, 21-4, 21-5, 21-6, 6 second power chips 22-1, 22-2, 22-3, 22-4, 22-5, 22-6, a positive electrode tab 23, a negative electrode tab 24, and an output electrode tab 25.
The substrate 20 includes a first metal region 201, a second metal region 202, a third metal region 203, a fourth metal region 204, a fifth metal region 205, a first upper isolation region 206-1, a first lower isolation region 206-2, a second upper isolation region 207-1, and a second lower isolation region 207-2. The third metal region 203 is disposed between the first metal region 201 and the second metal region 202. The fourth metal region 204 is disposed between the first metal region 101 and the third metal region 103, and is connected to the gates of the first power chips 21-1, 21-2, 21-3, 21-4, 21-5, and 21-6; the first upper isolation region 206-1 and the first lower isolation region 206-2 are respectively disposed on two sides of the fourth metal region 204 to isolate the fourth metal region 204 from the first metal region 201 and the third metal region 203. The fifth metal region 205 is disposed between the second metal region 202 and the third metal region 203, and is connected to the gates of the second power chips 22-1, 22-2, 22-3, 22-4, 22-5, and 22-6; the second upper isolation region 207-1 and the second lower isolation region 207-2 are respectively disposed on two sides of the fifth metal region 205 to isolate the fifth metal region 205 from the third metal region 203 and the second metal region 202. In addition, the output terminal electrode plate 25 is connected to one end of the third metal region 203; the output terminal electrode piece 25 includes a lock hole 2511.
The fourth metal region 204 and the fifth metal region 205 are connected to an external gate driving circuit (not shown). Similarly, the gate driving circuit may also be directly disposed on the first metal region 201, the second metal region 202, the third metal region 203, the fourth metal region 204 and the fifth metal region 205, similar to that shown in fig. 2B.
As shown in fig. 8B, the positive electrode sheet 23 includes a positive terminal 231, a connection portion 232, and 6 positive electrode pins 233-1, 233-2, 233-3, 233-4, 233-5, and 233-6. The positive electrode terminal 231 is connected with the positive electrode pins 233-1, 233-2, 233-3, 233-4, 233-5 and 233-6 through the connecting part 232, so that the positive electrode sheet 23 is in a C-shaped annular shape; the positive terminal 231 has a locking hole 2311. Similarly, the positive pins 233-1, 233-2, 233-3, 233-4, 233-5, and 233-6 are also divided into two groups, namely a first group G1 (positive pins 233-1, 233-2, and 233-3) and a second group G2 (positive pins 233-4, 233-5, and 233-6); the first group G1 and the second group G2 are respectively disposed on two sides of the central axis PA of the positive electrode sheet 23.
As shown in fig. 8C, the negative electrode tab 24 includes a negative terminal 241, a connecting portion 242, and 6 negative pins 243-1, 243-2, 243-3, 243-4, 243-5, and 243-6. The negative electrode terminal 241 is connected to the negative electrode pins 243-1, 243-2, 243-3, 243-4, 243-5 and 243-6 through a connecting part 242, so that the negative electrode sheet 24 is in a C-shaped annular shape; the negative terminal 241 has a lock hole 2411. Similarly, the negative pins 243-1, 243-2, 243-3, 243-4, 243-5, and 243-6 are also divided into two groups, i.e., a third group G3 (negative pins 243-1, 243-2, and 243-3) and a fourth group G4 (negative pins 243-4, 243-5, and 243-6); the third group G3 and the fourth group G4 are disposed on two sides of the central axis NA of the negative electrode tab 24, respectively.
The structure of the above elements of the high power module 2 is similar to that of the first embodiment, and therefore, the detailed description thereof is omitted. Unlike the first embodiment, the positive electrode pins 233-1, 233-2, and 233-3 have different widths, and the positive electrode pins 233-4, 233-5, and 233-6 also have different widths. Similarly, the negative pins 243-1, 243-2, and 243-3 have different widths, and the negative pins 243-4, 243-5, and 243-6 also have different widths.
Please refer to fig. 9, which is a perspective view of the positive electrode sheet 23 of the high power module 2 according to the second embodiment of the present invention. The widths of the positive electrode pins 233-1, 233-2, 233-3, 233-4, 233-5 and 233-6 are the channel widths of the current paths; therefore, in the present embodiment, the widths of the positive electrode pins 233-1, 233-2, 233-3, 233-4, 233-5, 233-6 are described as effective channel widths. As shown in fig. 9, the effective channel widths of the positive electrode pins 233-1, 233-2, 233-3 of the first group G1 increase in a direction away from the central axis PA of the positive electrode sheet.
The effective channel widths of the positive pins 233-1, 233-2, 233-3 of the first group G1 can be adjusted in different ways; in the present embodiment, the effective channel widths of the positive electrode pins 233-1, 233-2, 233-3 of the first group G1 are gradually increased in an arithmetic progression in a direction away from the central axis PA of the positive electrode sheet 23 (i.e. gradually increased from the positive electrode pin 233-3 toward the positive electrode pin 233-1), as shown in the following formula (6):
R1(n1-1)/(n1+1),R1n1/(n1+1),R1..............(6)
wherein, the effective channel width R3 of the positive pin 233-3 is R1(n1-1)/(n1+ 1); the effective channel width R2 of the positive pin 233-2 is Rn1/(n1+ 1); the effective channel width of the positive leg 233-1 is R1.
The tolerance of the differential order is the effective channel width R1 of the positive electrode pin 233-1 farthest from the central axis PA of the positive electrode sheet 23 divided by the sum (n1+1) of the positive electrode pins 233-1, 233-2, 233-3 and the gate driving circuits of the first group G1, as shown in the following formula (7):
(1/n1+1)*R1....................................(7)
wherein n1 represents the number of the positive electrode pins 233-1, 233-2, 233-3 of the first group G1; r1 represents the effective channel width of the positive electrode pin 233-1 farthest from the central axis PA of the positive electrode sheet 23. In the present embodiment, the effective channel width R2 of the positive pin 233-3 is R1/2; the effective channel width R3 of the positive pin 233-2 is 3R 1/4; the effective channel width of the positive leg 233-1 is R1.
Similarly, the effective channel widths of the positive electrode leads 233-4, 233-5, 233-6 of the second group G2 increase in a direction away from the central axis PA of the positive electrode sheet 23.
In the present embodiment, the effective channel widths of the positive electrode pins 233-4, 233-5, 233-6 of the second group G2 are gradually increased in an arithmetic progression toward the direction away from the central axis PA of the positive electrode sheet 23 (i.e., gradually increased from the positive electrode pin 233-4 toward the positive electrode pin 233-6), as shown in the following formula (8):
R6(n2-1)/(n2+1),R6n2/(n2+1),R6....................(8)
wherein, the effective channel width R4 of the positive pin 233-4 is R6(n2-1)/(n2+ 1); the effective channel width R5 of the positive pin 233-5 is R6n2/(n2+ 1); the effective channel width of the positive leg 233-6 is R6.
The tolerance of the differential order is the effective channel width R6 of the positive electrode pin 233-6 farthest from the central axis PA of the positive electrode sheet 23 divided by the sum (n2+1) of the positive electrode pins 233-4, 233-5, 233-6 and the gate driving circuits of the second group G2, as shown in the following formula (9):
(1/n2+1)*R6..............................................(9)
wherein n2 represents the number of the positive electrode pins 233-4, 233-5, 233-6 of the second group G2; r6 represents the effective channel width of the positive pin 233-6 farthest from the central axis PA of the positive electrode sheet 23. In the present embodiment, the effective channel width R4 of the positive pin 233-4 is R6/2; the effective channel width R5 of the positive pin 233-5 is 3R 6/4; the effective channel width of the positive leg 233-6 is R6.
Of course, the effective channel widths of the positive pins 243-1, 243-2, 243-3, 243-4, 243-5, and 243-6 can be increased in an increasing manner according to other different increasing functions, and similar effects can be achieved.
Please refer to fig. 10, which is a perspective view of the negative electrode tab 24 of the high power module 2 according to the second embodiment of the present invention. Unlike the first embodiment, the negative pins 243-1, 243-2, and 243-3 have different widths, and the negative pins 243-4, 243-5, and 243-6 also have different widths. As shown in fig. 10, the effective channel width between the negative pins 243-1, 243-2, 243-3 of the third group G3 increases in a direction away from the central axis NA of the negative electrode sheet 24.
The effective channel widths of the negative pins 243-1, 243-2, and 243-3 of the third group G3 can be adjusted in different ways; in the present embodiment, as shown in fig. 10, the effective channel widths of the negative pins 243-1, 243-2, and 243-3 of the third group G3 are also increased in an arithmetic progression in a direction away from the central axis NA of the negative electrode tab 24 (i.e., the effective channel widths are increased from the negative pin 243-1 to the negative pin 243-3), as shown in the following formula (10):
R1’(n3-1)/(n3+1),R1’n3/(n3+1),R1’..................(10)
the tolerance of the arithmetic progression is shown in the following equation (11):
(1/n3+1)*R1’...........................................(11)
wherein n3 represents the number of the negative pins 243-1, 243-2, 243-3 of the third group G3; r1' represents the effective channel width of the negative pin 243-1 furthest from the central axis NA of the negative electrode tab 24. In the present embodiment, the effective channel width R3 'of the negative pin 243-3 is R1'/2; the effective channel width R2 'of the negative pin 243-2 is 3R 1'/4; the effective channel width of the positive pin 243-1 is R1'.
Similarly, the effective channel widths of the negative pins 243-4, 243-5, 243-6 of the fourth group G4 increase in a direction away from the central axis NA of the negative electrode tab 24.
In the present embodiment, the effective channel widths of the negative pins 243-4, 243-5, and 243-6 of the fourth group G4 are gradually increased in an arithmetic progression toward a direction away from the central axis NA of the negative electrode sheet 24 (i.e., gradually increased from the negative pin 243-4 toward the negative pin 243-6), as shown in the following formula (12):
R6’(n4-1)/(n4+1),R6’n4/(n4+1),R6’.....................(12)
the tolerance of the arithmetic progression is shown in the following equation (13):
(1/n4+1)*R6’.............................................(13)
wherein n4 represents the number of the negative pins 243-4, 243-5, 243-6 of the fourth group G4; r6' represents the effective channel width of the positive pin 243-6 furthest from the central axis NA of the negative electrode tab 24. In the present embodiment, the effective channel width R4 'of the negative pin 243-4 is R6'/2; the effective channel width R5 'of the negative pin 243-5 is 3R 6'/4; the effective channel width of the positive leg 243-6 is R6'. The structure of the negative electrode sheet 24 is similar to that of the positive electrode sheet 23, and therefore, the description thereof is omitted.
Of course, the effective channel widths of the negative pins 243-1, 243-2, 243-3, 243-4, 243-5, and 243-6 may be increased in an increasing manner according to other different increasing functions, and similar effects may be achieved.
Since the distances between the positive pins 233-1, 233-2, 233-3, 233-4, 233-5, 233-6 and the locking holes 2311 (current input points) of the positive terminal 231 are different, and the distances between the negative pins 243-1, 243-2, 243-3, 243-4, 243-5, 243-6 and the locking holes 2411 (current input points) of the negative terminal 241 are also different, the problem of uneven current density may occur, which may affect the performance of the high power module 2; in the embodiment, the positive pins 233-1, 233-2, 233-3, 233-4, 233-5, 233-6 and the negative pins 243-1, 243-2, 243-3, 243-4, 243-5, 243-6 have different effective channel widths through the special design, so as to correct the problem of uneven current density, thereby improving the performance of the high power module 2.
It should be noted that the conventional high power module has poor circuit design, such as the position of the power chip and the design of the electrode plate, so that the stray inductance of the high power module is difficult to be lower than 10nH, and therefore, the high power module cannot be effectively applied to various vehicles and other related devices. On the contrary, according to the embodiment of the present invention, as shown in fig. 8B and 8C, the positive electrode sheet 23 and the negative electrode sheet 24 of the high power module 2 are in a C-shaped ring shape, and the opening direction of the positive electrode sheet 23 is opposite to the opening direction of the negative electrode sheet 24 (i.e. the positive electrode sheet 23 and the negative electrode sheet 24 are placed back to back), and both the positive electrode sheet 23 and the negative electrode sheet 24 can achieve reverse phase coupling, so that the stray inductance of the high power module 2 can be reduced.
In addition, according to the embodiment of the present invention, the positive electrode sheet 23 and the negative electrode sheet 24 of the high power module 2 have a gap therebetween, so that the positive electrode sheet 23 and the negative electrode sheet 24 are not overlapped in the vertical direction (the normal vector of the substrate 20), and the positive electrode sheet 23 and the negative electrode sheet 24 can achieve reverse coupling, thereby further reducing the stray inductance of the high power module 2.
In addition, according to the embodiment of the present invention, through a special structural design, the positive electrode tab 23 and the negative electrode tab 24 of the high power module 2 have a widened structural design of the positive terminal 231, the negative terminal 241, and the output terminal 251, so that they have a larger cross-sectional area, and thus the stray inductance of the high power module 2 can be further reduced.
In addition, the current density of the conventional high power module is not uniform due to poor circuit design and structural design, which further affects the performance of the conventional high power module. In contrast, according to the embodiment of the present invention, as shown in fig. 9, the positive electrode sheet 23 of the high power module 2 includes 6 positive electrode pins 233-1, 233-2, 233-3, 233-4, 233-5, and 233-6, and the effective channel widths of the positive electrode pins 233-1, 233-2, 233-3, 233-4, 233-5, and 233-6 are gradually increased in an arithmetic progression manner in a direction away from the central axis PA of the positive electrode terminal 23; as shown in fig. 10, the negative electrode pins 243-1, 243-2, 243-3, 243-4, 243-5, and 243-6 of the negative electrode sheet 24 of the high power module 2 also have corresponding structures, so that the high power module 2 can achieve a uniform current density.
Please refer to fig. 11A, fig. 11B and fig. 11C, which are schematic diagrams illustrating a high power module 3 according to a third embodiment of the present invention. As shown in fig. 11A, the high power module 3 includes a substrate 30, 6 first power chips 31-1, 31-2, 31-3, 31-4, 31-5, 31-6, 6 second power chips 32-1, 32-2, 32-3, 32-4, 32-5, 32-6, a positive electrode tab 33, a negative electrode tab 34, and an output electrode tab 35.
The substrate 30 includes a first metal region 301, a second metal region 302, a third metal region 303, a fourth metal region 304, a fifth metal region 305, a first upper isolation region 306-1, a first lower isolation region 306-2, a second upper isolation region 307-1, and a second lower isolation region 307-2. The output electrode tab 35 has a lock hole 3511.
The fourth metal region 304 and the fifth metal region 305 are connected to an external gate driving circuit (not shown). Similarly, the gate driving circuit can also be directly disposed on the first metal region 301, the second metal region 302, the third metal region 303, the fourth metal region 304 and the fifth metal region 305, similar to those shown in fig. 2B.
As shown in fig. 11B, the positive electrode sheet 33 includes a positive terminal 331, a connecting portion 332, and 6 positive electrode pins 333-1, 333-2, 333-3, 333-4, 333-5, 333-6; the positive terminal 331 has a lock hole 3311. Similarly, the positive pins 333-1, 333-2, 333-3, 333-4, 333-5, and 333-6 are also classified into a first group G1 (positive pins 333-1, 333-2, 333-3) and a second group G2 (positive pins 333-4, 333-5, 333-6).
As shown in fig. 11C, the negative electrode tab 34 includes a negative terminal 341, a connecting portion 342, and 6 negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6; the negative terminal 341 has a locking hole 3411. Similarly, the negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6 are also divided into a third group G3 (negative pins 343-1, 343-2, 343-3) and a fourth group G4 (negative pins 343-4, 343-5, 343-6).
The structure of each of the above elements of the high power module 3 is similar to that of the first embodiment, and therefore, the detailed description thereof is omitted. Different from the first embodiment, the positive electrode pins 333-1, 333-2, 333-3 have holes H1-1, H2-1, H3-1, respectively, and the positive electrode pins 333-4, 333-5, 333-6 also have holes H4-1, H5-1, H6-1, respectively. The negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6 also have holes H1-2, H2-2, H3-2, H4-2, H5-2, H6-2, respectively.
Please refer to fig. 12A and 12B, which are partial enlarged views of the positive electrode sheet 33 of the high power module 3 according to the third embodiment of the invention. The diameters of the holes H1-1, H2-1, H3-1, H4-1, H5-1 and H6-1 subtracted from the widths of the positive electrode pins 333-1, 333-2, 333-3, 333-4, 333-5 and 333-6 are the effective channel widths (the channel widths of the current paths). As shown in fig. 12A, the areas of the holes H1-1, H2-1, H3-1 of the positive electrode pins 333-1, 333-2, 333-3 of the first group G1 decrease in a direction away from the central axis PA of the positive electrode sheet 33, so that the effective channel widths of the positive electrode pins 333-1, 333-2, 333-3 of the first group G1 increase in a direction away from the central axis PA of the positive electrode sheet 33.
The effective channel widths of the positive pins 333-1, 333-2, 333-3 of the first group G1 can be adjusted in different ways. In the present embodiment, the widths of the positive electrode pins 333-1, 333-2, and 333-3 are the same, and the sizes of the holes are H3-1> H2-1> H1-1. Therefore, the effective channel width of the positive pin 333-1 is the width X of the positive pin 333-1 minus the diameter Dm1 of the hole H1-1, as shown in the following formula (14):
X-Dm1＝Z1............................................(14)
wherein, X represents the width of the positive pole pin 333-1 (since the widths of the positive pole pins 333-1, 333-2, 333-3, 333-4, 333-5, 333-6 are the same, all are represented by X); dm1 represents the diameter of hole H1-1; z1 indicates the effective channel width of the positive pin 333-1 (Z1 ═ Z1a + Z1 b).
The effective channel width Z2 of the positive pin 333-2 is the width X of the positive pin 333-2 minus the diameter Dm2 of the hole H2-1, as shown in the following formula (15):
X-Dm2＝Z2.................................................(15)
wherein X represents the width of the positive electrode pin 333-2; dm2 represents the diameter of hole H2-1; z2 indicates the effective channel width of the positive pin 333-2 (Z2 ═ Z2a + Z2 b).
The effective channel width Z3 of the positive pin 333-3 is the width X of the positive pin 333-3 minus the diameter Dm3 of the hole H3-1, as shown in equation (16):
X-Dm3＝Z3...................................................(16)
wherein X represents the width of the positive electrode pin 333-3; dm3 represents the diameter of hole H3-1; z3 indicates the effective channel width of the positive pin 333-3 (Z3 ═ Z3a + Z3 b).
The effective channel widths of the positive pins 333-1, 333-2, 333-3 of the first group G1 can be adjusted in different ways; in the present embodiment, the effective channel widths Z1, Z2, and Z3 of the first group G1, after subtracting the diameters of the holes H1-1, H2-1, and H3-1 from the widths of the positive pins 333-1, 333-2, and 333-3 of the first group G1, respectively, are increased in an arithmetic progression manner in a direction away from the central axis PA of the positive electrode sheet 33 (i.e., the effective channel widths are increased from the positive pin 333-3 toward the positive pin 333-1), as shown in the following formula (17):
Z1(n1-1)/(n1+1),Z1n1/(n1+1),Z1....................(17)
wherein, the effective channel width of the positive pin 333-3 is Z1(n1-1)/(n1+ 1); the effective channel width of the positive pin 333-2 is Z1n1/(n1+ 1); the effective channel width of the positive pin 333-1 is Z1.
The tolerance of the series of arithmetic steps is the effective channel width Z1 of the positive electrode pin 333-1 farthest from the central axis PA of the positive electrode sheet 33 divided by the sum (n1+1) of the positive electrode pins 333-1, 333-2, 333-3 and the gate driving circuits of the first group G1, as shown in the formula (18) of the second embodiment.
(1/n1+1)*Z1..............................................(18)
Wherein n1 represents the number of the positive pins 333-1, 333-2, 333-3 of the first group G1; z1 represents the effective channel width of the positive pin 333-1 furthest from the center axis PA of the positive electrode sheet 33; as mentioned above, the effective channel width Z1 is the width of the positive pin 333-1 minus the diameter of the corresponding hole H1-1. In the present embodiment, the effective channel width Z3 of the positive pin 333-3 is Z1/2; the effective channel width Z2 of the positive pin 333-2 is 3Z 1/4; and the effective channel width of the positive pin 333-1 is Z1.
As shown in fig. 12B, the areas of the holes H4-1, H5-1, and H6-1 of the positive electrode pins 333-4, 333-5, and 333-6 of the second group G2 decrease in a direction away from the central axis PA of the positive electrode sheet 33, so that the effective channel widths Z4, Z5, and Z6 of the positive electrode pins 333-4, 333-5, and 333-6 of the second group G2 increase in a direction away from the central axis PA of the positive electrode sheet 33.
The effective channel widths Z4, Z5, Z6 of the positive pins 333-4, 333-5, 333-6 of the second group G2 can be adjusted in different ways. In the present embodiment, the widths of the positive electrode pins 333-4, 333-5, and 333-6 are the same, and the sizes of the holes are H4-1> H5-1> H6-1. Therefore, the effective channel width Z4 of the positive pin 333-4 is the width X of the positive pin 333-4 minus the diameter Dm4 of the hole H4-1, as shown in the following formula (19):
X-Dm4＝Z4.............................................(19)
wherein X represents the width of the positive pin 333-4; dm4 represents the diameter of hole H4-1; z4 indicates the effective channel width of the positive pin 333-4 (Z4 ═ Z4a + Z4 b).
The effective channel width Z5 of the positive pin 333-5 is the width X of the positive pin 333-5 minus the diameter Dm5 of the hole H5-1, as shown in equation (20):
X-Dm5＝Z5.................................................(20)
wherein X represents the width of the positive electrode pin 333-5; dm5 represents the diameter of hole H5-1; z5 indicates the effective channel width of the positive pin 333-5 (Z5 ═ Z5a + Z5 b).
The effective channel width Z6 of the positive pin 333-6 is the width X of the positive pin 333-6 minus the diameter Dm6 of the hole H6-1, as shown in equation (21):
X-Dm6＝Z6..................................................(21)
wherein X represents the width of the positive electrode pin 333-6; dm6 represents the diameter of hole H6-1; z6 indicates the effective channel width of the positive pin 333-6 (Z6 ═ Z6a + Z6 b).
The effective channel widths Z4, Z5, Z6 of the positive pins 333-4, 333-5, 333-6 of the second group G2 can be adjusted in different ways; in the embodiment, the effective channel widths of the positive electrode pins 333-4, 333-5, and 333-6 of the second group G2 after subtracting the diameters Dm4, Dm5, and Dm6 of the holes H4-1, H5-1, and H6-1 respectively from the widths X of the positive electrode pins 333-4, 333-6 of the second group G2 are increased in an arithmetic progression in a direction away from the central axis PA of the positive electrode tab 33 (i.e., increased from the positive electrode pin 333-4 toward the positive electrode pin 333-6), as shown in the following formula (22):
Z6(n2-1)/(n2+1),Z6n2/(n2+1),Z6....................(22)
wherein, the effective channel width Z4 of the positive pin 333-4 is Z6(n2-1)/(n2+ 1); the effective channel width Z5 of the positive pin 333-5 is Z6n2/(n2+ 1); the effective channel width of the positive pin 333-6 is Z6.
The tolerance of the series of arithmetic steps is the effective channel width Z6 of the positive electrode pin 333-6 farthest from the central axis PA of the positive electrode sheet 33 divided by the sum (n2+1) of the positive electrode pins 333-4, 333-5, 333-6 and the gate driving circuits of the second group G2, as shown in the formula (23) of the second embodiment.
(1/n2+1)*Z6...............................................(23)
Wherein n2 represents the number of the positive pins 333-4, 333-5, 333-6 of the second group G2; z6 represents the effective channel width of the positive pin 333-6 furthest from the central axis PA of the positive electrode sheet 33; as mentioned above, the effective channel width is the width of the positive pin 333-6 minus the diameter of the corresponding hole H6-1. In the present embodiment, the effective channel width Z4 of the positive pin 333-4 is Z6/2; the effective channel width Z5 of the positive pin 333-5 is 3Z 6/4; the effective channel width of the positive pin 333-6 is Z6.
The structure of the negative electrode sheet 34 is similar to that of the positive electrode sheet 33, and therefore, the description thereof is omitted. In the present embodiment, the effective channel width Z3 'of the negative pin 343-3 is Z1'/2; the effective channel width Z2 'of the negative pin 343-2 is 3Z 1'/4; the effective channel width of the negative terminal 343-1 is Z1'; the effective channel width Z4 'of the negative pin 343-4 is Z6'/2; the effective channel width Z5 'of the negative pin 343-5 is 3Z 6'/4; the effective channel width of the negative leg 343-6 is Z6'.
Since the distances between the positive pins 333-1, 333-2, 333-3, 333-4, 333-5, 333-6 and the locking hole 3311 (current input point) of the positive terminal 331 are different, and the distances between the negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6 and the locking hole 3411 (current input point) of the negative terminal 341 are also different, the problem of current density non-uniformity may occur, which may affect the performance of the high power module 3; in the embodiment, the positive pins 333-1, 333-2, 333-3, 333-4, 333-5, 333-6 and the negative pins 343-1, 343-2, 343-3, 343-4, 343-5, 343-6 have different effective channel widths through the special design, so as to correct the problem of uneven current density, thereby improving the performance of the high power module 3. As shown in fig. 11B and fig. 12A to 12B, the positive electrode sheet 33 and the negative electrode sheet 34 of the high power module 3 are in a C-ring shape, and the opening direction of the positive electrode sheet 33 is opposite to the opening direction of the negative electrode sheet 34 (i.e., the positive electrode sheet 33 and the negative electrode sheet 34 are placed back to back), and both the positive electrode sheet 33 and the negative electrode sheet 34 can achieve reverse phase coupling, so that the stray inductance of the high power module 3 can be reduced.
Of course, the above description is only an example, and the circuit, the structure and the coordination relationship of the components of the high power module 3 may be changed according to the actual requirement, and the invention is not limited thereto.
In summary, according to embodiments of the present invention, the stray inductance from the positive terminal (P terminal/DC +) to the negative terminal (N terminal/DC-) of the high power module can reach below 10nH and the current density can reach the condition below 20A/mm2 (when the high power module 1 is operated below 10 kw); other embodiments of the present invention achieve similar effects. The positive electrode plate and the negative electrode plate of each high-power module are in a C-shaped ring shape, the opening direction of the positive electrode plate is opposite to that of the negative electrode plate (namely the positive electrode plate and the negative electrode plate are arranged back to back), and the positive electrode plate and the negative electrode plate can achieve reverse phase coupling so as to reduce stray inductance of each high-power module. Therefore, the high power module may be widely applied to various vehicles such as electric vehicles, hybrid vehicles, electric motorcycles, electric buses, electric trucks, charging stations, and the like.
In addition, according to the embodiment of the invention, the positive electrode plate and the negative electrode plate of the high-power module have a space therebetween, so that the positive electrode terminal and the negative electrode terminal are not overlapped in the vertical direction (normal vector of the substrate), and the positive electrode plate and the negative electrode plate can achieve reverse coupling, thereby further reducing the stray inductance of the high-power module.
In addition, according to the embodiment of the invention, through special structural design, the positive electrode plate and the negative electrode plate of the high-power module have widened structural designs of the positive electrode terminal, the negative electrode terminal and the output end electrode plate, so that the positive electrode plate and the negative electrode plate have larger sectional areas, and the stray inductance of the high-power module can be further reduced.
In one embodiment, the positive electrode plate of the high power module includes a plurality of positive electrode pins, and the effective channel widths of the positive electrode pins are gradually increased in an arithmetic progression in a direction away from the central axis PA of the positive electrode terminal 23; in an embodiment, the negative electrode pins of the negative electrode plate of the high power module may also have the corresponding structure. In one embodiment, the effective channel width of the positive pins is adjusted by the size of the holes H1-1, H2-1, H3-1, H4-1, H5-1 and H6-1, so that the high power module can achieve uniform current density.
It can be seen that the present invention achieves the desired enhanced effect without departing from the prior art, and is not easily perceived by those skilled in the art.
The present invention may be embodied in other specific forms without departing from the spirit or essential attributes thereof, and it should be understood that various changes and modifications can be effected therein by one skilled in the art without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (30)

1. A high power module, comprising:
a substrate including a first metal region, a second metal region and a third metal region disposed between the first metal region and the second metal region; and
a plurality of first power chips arranged in the third metal area and connected to the first metal area through a plurality of first connecting pieces;
a plurality of second power chips arranged in the second metal area and connected to the third metal area through a plurality of second connecting pieces;
a positive electrode plate in C-shape and connected to the first metal region; and
a negative electrode plate in a C-shaped ring shape and connected to the second metal region, wherein the opening of the negative electrode plate faces opposite to the opening of the positive electrode plate; and
and the output terminal electrode plate is connected to one end of the third metal area.
2. The high power module of claim 1, further comprising a fourth metal region and a fifth metal region, the fourth metal region being disposed between the first metal region and the third metal region and connected to the gates of the first power chips, the fifth metal region being disposed between the second metal region and the third metal region and connected to the gates of the second power chips, the fourth metal region and the fifth metal region being connected to an external gate driving circuit.
3. The high power module of claim 1, further comprising a gate driving circuit, a fourth metal region and a fifth metal region, wherein the fourth metal region is disposed between the first metal region and the third metal region and connected to the gates of the first power chips, the fifth metal region is disposed between the second metal region and the third metal region and connected to the gates of the second power chips, and the gate driving circuit is disposed on the first metal region, the second metal region, the third metal region, the fourth metal region and the fifth metal region and connected to the fourth metal region and the fifth metal region.
4. The high power module as claimed in claim 3, wherein the first metal region comprises a first groove, the second metal region comprises a second groove, the third metal region comprises a third groove, the fourth metal region comprises a fourth groove, and the fifth metal region comprises a fifth groove, the gate driving circuit is disposed in a space formed by the connection of the first groove, the second groove, the third groove, the fourth groove and the fifth groove.
5. The high power module as claimed in claim 1, wherein the substrate comprises a recess, and a gate driving circuit is disposed in the recess such that the gate driving circuit is covered by the substrate and the first metal region, the second metal region and the third metal region.
6. The high power module of claim 1, wherein the first power chips are arranged in a line to form an array and connected in parallel, and the second power chips are arranged in a line to form another array and connected in parallel.
7. The high power module of claim 1, wherein the first power chips are symmetrical to the second power chips; the positive electrode plate is symmetrical to the negative electrode plate.
8. The high power module of claim 1, wherein the output terminal electrode is planar and parallel to and in the same plane as the third metal region.
9. The high power module of claim 1, wherein the width of the output terminal electrode pad is greater than 1 width of the first power chips and less than 2 widths of the first power chips.
10. The high power module of claim 1, wherein the positive electrode plate is parallel to the negative electrode plate and a distance is provided between the positive electrode plate and the negative electrode plate.
11. The high power module as claimed in claim 1, wherein the width of the positive electrode plate is greater than the sum of the widths of the first power chips and the width of a central groove of the positive electrode plate and the width of the space between the first power chips, and is less than the width of the first metal region.
12. The high power module according to claim 1, wherein the positive electrode plate comprises a positive electrode terminal, a connecting portion and a plurality of positive electrode pins, a width of one end of the positive electrode terminal connected to the connecting portion is equal to a width of the positive electrode plate, a width of the other end of the positive electrode terminal is smaller than the width of the positive electrode terminal, and the width of the other end is greater than or equal to the width minus 2 widths of the first power chips.
13. The high power module as claimed in claim 1, wherein the positive electrode plate comprises a positive terminal, a connecting portion and a plurality of positive pins, the positive pins are respectively corresponding to the first power chips, the positive terminal is connected to the positive pins through the connecting portion, so that the positive electrode plate is in a C-ring shape, and the positive terminal and the positive pins are respectively located on two planes and are parallel in space.
14. The high power module as claimed in claim 13, wherein the width of each positive electrode pin is greater than or equal to the width of the first power chip and less than the sum of the width of each first power chip and the distance between two adjacent first power chips.
15. The high power module as claimed in claim 13, wherein the positive electrode pins are divided into a first group and a second group, the first group and the second group are respectively disposed on two sides of a central axis of the positive electrode plate, and the effective channel widths of the positive electrode pins of the first group and the effective channel widths of the positive electrode pins of the second group increase in a direction away from the central axis of the positive electrode plate.
16. The high power module as claimed in claim 13, wherein the positive electrode pins are divided into a first group and a second group, the first group and the second group are respectively disposed on two sides of a central axis of the positive electrode plate, and the effective channel widths of the positive electrode pins of the first group and the effective channel widths of the positive electrode pins of the second group are increased by an equal difference in a direction away from the central axis of the positive electrode plate.
17. The high power module of claim 16 wherein the incremental difference is the effective channel width of the positive electrode pin farthest from the central axis of the positive electrode plate divided by the sum of the numbers of the positive electrode pins and a gate driving circuit of the first group or the sum of the numbers of the positive electrode pins and the gate driving circuit of the second group.
18. The high power module as claimed in claim 13, wherein the positive electrode pins are divided into a first group and a second group, the first group and the second group are respectively disposed on two sides of a central axis of the positive electrode plate, each positive electrode pin includes a hole, and an area of the holes of the positive electrode pins of the first group and an area of the holes of the positive electrode pins of the second group decrease in a direction away from the central axis of the positive electrode plate.
19. The high power module of claim 18, wherein the widths of the positive electrode pins of the first group and the widths of the positive electrode pins of the second group are respectively subtracted from the diameters of the corresponding holes, and the effective channel widths of the positive electrode pins are increased by an equal difference in a direction away from the central axis of the positive electrode plate.
20. The high power module of claim 19, wherein the tolerance of the differential order is an effective channel width of the positive electrode pin farthest from a central axis of the positive electrode plate divided by a sum of the numbers of the positive electrode pins and a gate driving circuit of the first group or a sum of the numbers of the positive electrode pins and the gate driving circuit of the second group.
21. The high power module of claim 1, wherein the width of the negative electrode plate is greater than the sum of the width of the second power chips, the width of a central groove of the negative electrode plate and the width of the space between the second power chips, and is less than the width of the second metal region.
22. The high power module of claim 1, wherein the negative electrode plate comprises a negative electrode terminal, a connecting portion and a plurality of negative electrode pins, a width of one end of the negative electrode terminal connected to the connecting portion is equal to a width of the negative electrode plate, a width of the other end of the negative electrode terminal is smaller than the width of the negative electrode terminal, and the width of the other end is greater than or equal to the width minus 2 widths of the second power chips.
23. The high power module as claimed in claim 1, wherein the negative electrode plate comprises a negative terminal, a connecting portion and a plurality of negative pins, the positions of the negative pins correspond to the second power chips, the negative terminal is connected to the negative pins through the connecting portion, so that the negative electrode plate is in a C-ring shape, and the negative terminal and the negative pins are on two planes and parallel in space.
24. The high power module of claim 23 wherein the width of each negative pin is greater than or equal to the width of the second power chip and less than the sum of the width of each second power chip and the distance between two adjacent second power chips.
25. The high power module of claim 23, wherein the negative electrode pins are divided into a third group and a fourth group, the third group and the fourth group are respectively disposed on two sides of the central axis of the negative electrode plate, and the effective channel widths of the negative electrode pins of the third group and the effective channel widths of the negative electrode pins of the fourth group increase in a direction away from the central axis of the negative electrode plate.
26. The high power module of claim 23, wherein the negative electrode pins are divided into a third group and a fourth group, the third group and the fourth group are respectively disposed on two sides of the central axis of the negative electrode plate, and the effective channel widths of the negative electrode pins of the third group and the effective channel widths of the negative electrode pins of the fourth group are increased by an equal difference in a direction away from the central axis of the negative electrode plate.
27. The high power module of claim 26 wherein the incremental difference is the effective channel width of the negative pin furthest from the central axis of the negative electrode plate divided by the sum of the numbers of the negative pins of the third groups and a gate driving circuit or the sum of the numbers of the negative pins of the fourth groups and the gate driving circuit.
28. The high power module of claim 23, wherein the negative electrode pins are divided into a third group and a fourth group, the third group and the fourth group are respectively disposed on two sides of the central axis of the negative electrode plate, and each negative electrode pin comprises a hole, and the areas of the holes of the negative electrode pins of the third group and the areas of the holes of the negative electrode pins of the fourth group decrease in a direction away from the central axis of the negative electrode plate.
29. The high power module of claim 28, wherein the widths of the negative pins of the third group and the widths of the negative pins of the fourth group are subtracted from the diameters of the corresponding holes, respectively, and the effective channel widths of the negative pins are increased by an equal difference in a direction away from the central axis of the negative electrode plate.
30. The high power module of claim 29, wherein the tolerance of the differential order is an effective channel width of the negative electrode pin farthest from the central axis of the negative electrode plate divided by a sum of the numbers of the negative electrode pins of the third groups and a gate driving circuit or a sum of the numbers of the negative electrode pins of the fourth groups and the gate driving circuit.
CN201911367057.4A 2019-12-26 2019-12-26 High-power module Withdrawn CN113054826A (en)

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Citations (4)

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US20100141304A1 (en) * 2007-07-03 2010-06-10 Mitsubishi Electric Corporation Drive circuit for power element
US20120062533A1 (en) * 2010-09-10 2012-03-15 Chunghwa Picture Tubes, Ltd. Gate driver for use in a display panel
CN104380462A (en) * 2012-06-01 2015-02-25 松下知识产权经营株式会社 Power semiconductor device
CN110383475A (en) * 2017-03-14 2019-10-25 罗姆股份有限公司 Semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20100141304A1 (en) * 2007-07-03 2010-06-10 Mitsubishi Electric Corporation Drive circuit for power element
US20120062533A1 (en) * 2010-09-10 2012-03-15 Chunghwa Picture Tubes, Ltd. Gate driver for use in a display panel
CN104380462A (en) * 2012-06-01 2015-02-25 松下知识产权经营株式会社 Power semiconductor device
CN110383475A (en) * 2017-03-14 2019-10-25 罗姆股份有限公司 Semiconductor device

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Application publication date: 20210629