CN113053970B - Double-sided display device and preparation method - Google Patents
Double-sided display device and preparation method Download PDFInfo
- Publication number
- CN113053970B CN113053970B CN202110260452.3A CN202110260452A CN113053970B CN 113053970 B CN113053970 B CN 113053970B CN 202110260452 A CN202110260452 A CN 202110260452A CN 113053970 B CN113053970 B CN 113053970B
- Authority
- CN
- China
- Prior art keywords
- layer
- emitting unit
- substrate
- light emitting
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
Abstract
The application provides a two-sided display device and preparation method, relates to and shows technical field, has solved the picture of two-sided display both sides and can only show the problem of same picture, including base plate, first luminescence unit, second luminescence unit, first signal line, second signal line, wherein, first signal line with the second signal line is different, first anode layer with the second anode layer is different, first cathode layer with the second cathode layer is different. The two-side light-emitting unit of the display is driven to emit light through the double signal lines and the double electrode driving mode, independent display control and independent switch hole control of the first light-emitting unit and the second light-emitting unit of the display are achieved, the two sides of the display are both forward display for a viewer, different pictures can be displayed at the same time, the circuit integration level is higher, and the whole thickness of the display is reduced.
Description
Technical Field
The application relates to the technical field of display, in particular to a double-sided display device and a preparation method thereof.
Background
With the development of display technology, double-sided display has become the mainstream display of bank and supermarket trading markets such as billboards and labels. The double-sided display usually adopts a mechanical connection manner to package two Organic Light-Emitting diodes (OLEDs) together, or to bond 2 packaged individual OLEDs together, which increases the thickness of the display device.
Therefore, in order to make the double-sided display light and Thin, a series of double-sided display devices have been produced in which Thin Film Transistors (TFTs) are formed in the same interlayer or double-sided common TFT switches. However, the TFT switches fabricated in the same interlayer can reduce the number of pixels of the display panel by at least 1/2, and the design of the dual-sided common TFT switches often neglects that the two-sided display has only one side of the display that is forward to the viewer, and only the same display can be displayed.
Disclosure of Invention
The application provides a double-sided display, integrated double-sided display circuit on same panel, both sides are the forward to viewer during its demonstration to the two sides can show different pictures simultaneously, have kept display panel pixel density, and the display is whole more frivolous.
In one aspect, the present application provides a dual-sided display, comprising:
a substrate;
a first light emitting unit disposed at one side of the substrate, the first light emitting unit including a first anode layer and a first cathode layer;
a second light emitting unit also disposed at one side of the substrate, the second light emitting unit including a second anode layer and a second cathode layer;
the first signal line is connected with the first anode layer and is used for controlling the first light-emitting unit to emit light to one side of the substrate;
the second signal line is connected with the second anode layer and is used for controlling the second light-emitting unit to emit light to the other side of the substrate;
wherein the first signal line and the second signal line are different, the first anode layer and the second anode layer are different, and the first cathode layer and the second cathode layer are different.
In one possible implementation manner of the present application, the first light emitting unit and the second light emitting unit are disposed on the same side of the substrate.
In one possible implementation manner of the present application, each of the first light emitting unit and the second light emitting unit includes a gate insulating layer, and the first light emitting unit and the second light emitting unit share the gate insulating layer.
In one possible implementation manner of the present application, each of the first light emitting unit and the second light emitting unit includes a gate layer, the first light emitting unit and the second light emitting unit share the gate layer, and the gate layer shared by the first light emitting unit and the second light emitting unit is disposed in the gate insulating layer.
In one possible implementation manner of the present application, the first light emitting unit includes a first source layer, a first drain layer, and a first gate layer, the second light emitting unit includes a second source layer, a second drain layer, and a second gate layer, the first gate layer is disposed in a first region in the gate insulating layer, the second gate layer is disposed in a second region in the gate insulating layer, and the first region and the second region are different.
In one possible implementation manner of the present application, the first light emitting unit and the second light emitting unit are disposed on different sides of the substrate.
In one possible implementation manner of the present application, the first light emitting unit includes a first gate insulating layer, a third gate layer, a third source layer, a third drain layer, and a third active layer, the third drain layer and the third active layer are disposed on the substrate, the first gate insulating layer is disposed on the substrate and covers the third drain layer and the third active layer, the third source layer is disposed on the first gate insulating layer and is connected to the third active layer, and the third gate layer is disposed in the first gate insulating layer.
In one possible implementation manner of the present application, the second light emitting unit includes a second gate insulating layer, a fourth gate layer, a fourth source layer, a fourth drain layer, and a fourth active layer, the fourth drain layer and the fourth active layer are disposed on the substrate, the second gate insulating layer is disposed on the substrate and covers the fourth drain layer and the fourth active layer, the fourth source layer is disposed on the second gate insulating layer and is connected to the fourth active layer, and the fourth gate layer is disposed in the second gate insulating layer.
In another aspect, the present application provides a method of manufacturing a dual-sided display device, the method including the steps of:
providing a substrate;
preparing a light emitting unit on the board, the light emitting unit including a first anode layer and a first cathode layer and a second light emitting unit including a second anode layer and a second cathode layer;
preparing a first signal line for the first light-emitting unit, wherein the first signal line is connected with a first anode layer, and the first anode layer and the first cathode layer control the first light-emitting unit to emit light to one side of the substrate through the first signal line;
preparing a second signal line for the second light-emitting unit, wherein the second signal line is connected with a second anode layer, and the second anode layer and the second cathode layer control the second light-emitting unit to emit light to one side of the substrate through the second signal line;
wherein the first signal line and the second signal line are different, the first anode layer and the second anode layer are different, and the first cathode layer and the second cathode layer are different.
In one possible implementation of the present application, a light emitting unit is fabricated on the board, including:
preparing a first light emitting unit on the substrate;
preparing a second light emitting unit on the substrate;
wherein the first light emitting unit and the second light emitting unit are prepared on the substrate asynchronously.
In the application, the first signal line is connected with the first anode layer of the first light-emitting unit, the second signal line is connected with the second anode layer of the second light-emitting unit, namely, the light-emitting units on the front side and the back side of the display are driven to emit light in a double-signal line and double-electrode driving mode, independent display control and independent switch hole control of the first light-emitting unit and the second light-emitting unit of the display are realized, both sides of the display are forward display for viewers, different pictures can be displayed at the same time, meanwhile, the power-off of the light-emitting unit on the other side is controlled only during single-side display, the energy-saving effect is better, the expandable mode is more, the first light-emitting unit and the second light-emitting unit of different films are integrated on the same substrate, the circuit integration level is higher, the pixel density of a display panel is kept, and the display is lighter and thinner as a whole.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
Fig. 1 is a schematic structural diagram of a double-sided display device according to an embodiment of the present application;
fig. 2 is a schematic structural diagram of a double-sided display device according to another embodiment of the present application;
fig. 3 is a schematic structural diagram of a double-sided display device according to another embodiment of the present application;
fig. 4 is a schematic flow chart of a method for manufacturing a double-sided display device provided in another embodiment of the present application;
fig. 5 to 10 are schematic structural views in a process of manufacturing a double-sided display device provided in another embodiment of the present application;
fig. 11 is a schematic flow chart of a method for manufacturing a double-sided display device provided in another embodiment of the present application;
fig. 12 is a schematic flow chart of a method for manufacturing a dual-sided display device provided in another embodiment of the present application;
fig. 13 to 19 are schematic structural views in a process of manufacturing a double-sided display device provided in another embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only some embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not set forth in detail in order to avoid obscuring the description of the present invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
The application provides a double-sided display, includes:
a substrate 1;
a first light emitting unit disposed at one side of the substrate 1, the first light emitting unit including a first anode layer 101 and a first cathode layer 102;
a second light emitting unit also disposed at one side of the substrate 1, the second light emitting unit including a second anode layer 201 and a second cathode layer 202;
a first signal line connected to the first anode layer 101, the first signal line being configured to control the first light-emitting unit to emit light to one side of the substrate 1;
a second signal line connected to the second anode layer 201, the second signal line being used to control the second light emitting unit to emit light to the other side of the substrate 1;
the first signal lines and the second signal lines are different, the first anode layer 101 and the second anode layer 201 are different, and the first cathode layer 102 and the second cathode layer 202 are different.
In the embodiment of the application, the first signal line is connected with the first anode layer 101 of the first light-emitting unit, the second signal line is connected with the second anode layer 201 of the second light-emitting unit, namely, the light-emitting units on the front side and the back side of the display are driven to emit light in a double-signal line and double-electrode driving mode, independent display control and independent switch hole control of the first light-emitting unit and the second light-emitting unit of the display are realized, both sides of the display are forward display for a viewer, different pictures can be displayed at the same time, meanwhile, the power failure of the light-emitting unit on the other side is controlled only during single-side display, the energy-saving effect is better, more expandable modes are realized, the first light-emitting unit and the second light-emitting unit of different films are integrated on the same substrate, the circuit integration level is higher, and the overall thickness of the display is further reduced.
In the embodiment of the present application, the first light emitting unit and the second light emitting unit may be disposed on the same side of the substrate 1, or disposed on different sides of the substrate 1, which is specifically exemplified below.
In one embodiment, when the first light emitting unit and the second light emitting unit are disposed on the same side of the substrate 1, as shown in fig. 1, the embodiment of the present application provides a dual-sided display, which includes a substrate 1, a first light emitting unit, a second light emitting unit, a first signal line, and a second signal line.
The substrate 1 includes a glass substrate having opposite surfaces and a buffer layer deposited on one side of the glass substrate.
The first light emitting unit and the second light emitting unit are respectively disposed on one side of the substrate 1, specifically, the first light emitting unit and the second light emitting unit are disposed on one side of the substrate 1 where the buffer layer is located, the first light emitting unit includes a first anode layer 101, a first cathode layer 102 and a first pixel definition layer 103, the second light emitting unit includes a second anode layer 201, a second cathode layer 202 and a second pixel definition layer 203, the first anode layer 101 and the second anode layer 201 are different, the first cathode layer 102 and the second cathode layer 202 are different, the first pixel definition layer 103 and the second pixel definition layer 203 are different, the first anode layer 101, the first cathode layer 102 and the first pixel definition layer 103 constitute a first pixel organic light emitting layer for implementing light emitting display on one side of the substrate 1, the second anode layer 201, the second cathode layer 202 and the second pixel definition layer 203 constitute a second pixel organic light emitting layer for implementing light emitting display on the other side of the substrate 1, and the first pixel organic light emitting layer and the second pixel organic light emitting layer are located on different film layers.
The first signal line is connected to the first anode layer 101, and the second signal line is connected to the second anode layer 201, which are different from each other. The first anode layer 101 and the first cathode layer 102 control the first light emitting unit to one side of the substrate 1 through the first signal line, the second anode layer 201 and the second cathode layer 202 control the second light emitting unit to emit light to the other side of the substrate 1 through the second signal line, and through the design of the double signal lines and the double electrodes, the independent on-off control of the first pixel organic light emitting layer and the second pixel organic light emitting layer which are located in different film layers is realized, so that the pictures on the two sides of the display can have the same display effect.
In the embodiments of the present disclosure, in order to further improve the line integration and reduce the overall thickness of the display, part of the film structures in the first light emitting unit and the second light emitting unit may be shared, such as the gate insulating layer and the gate electrode layer.
In one embodiment, as shown in fig. 1, the first and second light emitting cells share the gate insulating layer 301, and each of the first and second light emitting cells includes the gate insulating layer 301, and the gate insulating layer 301 is disposed on the buffer layer.
In another specific embodiment, as shown in fig. 1, the first and second light emitting units share a gate layer 401, each of the first and second light emitting units includes the gate layer 401, and the gate layer 401 shared by the first and second light emitting units is disposed within the gate insulating layer 301. The first light-emitting unit and the second light-emitting unit share the gate electrode layer 401 and the gate insulating layer 301, so that the integration level of the array layer is improved, the size of an integrated circuit is reduced, and more TFT structures can be conveniently integrated in a TFT display device with the same width.
A specific structure in which the gate insulating layer 301 and the gate layer 401 are shared by the above-described first light-emitting unit and the second light-emitting unit is specifically exemplified below.
The first light emitting unit includes a first source layer 104 and a first drain layer 105, the first drain layer 105 is disposed on the buffer layer and in the gate insulating layer 301, the first source layer 104 is disposed on the gate insulating layer 301, the first drain layer 105 and the first source layer 104 are connected through a first active layer 106, a first semiconductor layer 107 is deposited at a contact portion of the first active layer 106 and the first drain layer 105 and the first source layer 104, the first drain layer 105 and the gate layer 401 together form a first TFT structure. The first TFT structure forms a semiconductor switch device of a first pixel organic light emitting layer in the first light emitting unit, and the first TFT structure is used for directly controlling the point pulse of the first pixel organic light emitting layer, so that the reaction speed and the display gray scale of the first light emitting unit are improved.
The second light emitting unit includes a second source layer 204 and a second drain layer 205, the second drain layer 205 is deposited on the buffer layer and disposed in the gate insulating layer 301, the second source layer 204 is deposited on the gate insulating layer 301, the second drain layer 205 and the second source layer 204 are connected through a second active layer 206, a second semiconductor layer 207 is deposited at a contact portion between the second active layer 206 and the second drain layer 205 and the second source layer 204, the second drain layer 205 and the gate layer 401 together form a second TFT structure. The second TFT structure forms a semiconductor switch device of a second pixel organic light-emitting layer in the second light-emitting unit, and the second TFT structure is used for directly controlling the point pulse of the second pixel organic light-emitting layer, so that the reaction speed and the display gray scale of the second light-emitting unit are improved.
A first passivation protection layer 501 and a second passivation protection layer 502 are further disposed between the first light emitting unit and the second light emitting unit, the first passivation protection layer 501 is disposed on the gate insulating layer 301, a projection of the first passivation protection layer 501 covers the first source layer 104, the second source layer 204 and the first pixel organic light emitting layer, and the second passivation protection layer 502 is disposed on the first passivation protection layer 501 and between the first anode layer 101 and the second anode layer 201. The first passivation layer 501 and the second passivation layer 502 jointly play a role in protecting the two TFT structures, the first anode layer 101 and the second anode layer 201, so that the structures are completely isolated from the external corrosive medium, thereby achieving the corrosion prevention effect.
In summary, in the present embodiment, a dual-channel TFT structure is adopted to form two independent control switches for respectively driving the first light emitting unit and the second light emitting unit to emit light, so that the images on two opposite sides of the display are displayed in the forward direction, and it is convenient to control the two sides of the display to respectively display different images.
In another embodiment, as shown in fig. 2, the first light emitting unit and the second light emitting unit do not share the gate layer 401, and a specific structure is exemplified below.
The first light emitting unit includes a first gate layer 601, the second light emitting unit includes a second gate layer 602, the first gate layer 601 is disposed in a first region within the gate insulating layer 301, and the second gate layer 602 is disposed in a second region within the gate insulating layer 301, the first region and the second region being different. The first source layer 104, the first drain layer 105, the first active layer 106 and the first gate layer 601 jointly form a TFT structure for driving the first pixel organic light emitting layer, the second source layer 204, the second drain layer 205, the second active layer 206 and the second gate layer 602 jointly form a TFT structure for driving the first pixel organic light emitting layer, and the two TFT structures trigger the first light emitting unit and the second light emitting unit to emit light respectively, so that independent on-off control of the first light emitting unit and the second light emitting unit is realized.
In another embodiment, when the first light emitting unit and the second light emitting unit are disposed on different sides of the substrate, as shown in fig. 3, the embodiment of the present application provides a dual-sided display including a substrate 1, a first light emitting unit, a second light emitting unit, a first signal line, and a second signal line.
The substrate 1 includes a glass substrate having opposite surfaces and a buffer layer deposited on one side of the glass substrate.
The first light emitting unit and the second light emitting unit are disposed on different sides of the substrate 1, buffer layers are disposed on two sides of the substrate 1, the first light emitting unit and the second light emitting unit are disposed on the buffer layers on two sides of the substrate 1, respectively, the first light emitting unit includes a first gate insulating layer 701, a third gate layer 702, a third source layer 703, a third drain layer 704, and a third active layer 705, the third drain layer 704 and the third active layer 705 are disposed on the substrate 1, the first gate insulating layer 701 is disposed on the substrate 1 and covers the third drain layer 704 and the third active layer 705, the third source layer 703 is disposed on the first gate insulating layer 701 and connected to the third active layer 705, and the third gate layer 702 is disposed in the first gate insulating layer 701.
The second light emitting unit includes a second gate insulating layer 801, a fourth gate electrode layer 802, a fourth source electrode layer 803, a fourth drain electrode layer 804, and a fourth active layer 805, the fourth drain electrode layer 804 and the fourth active layer 805 are disposed on the substrate 1, the second gate insulating layer 801 is disposed on the substrate 1 and covers the fourth drain electrode layer 804 and the fourth active layer 805, the fourth source electrode layer 803 is disposed on the second gate insulating layer 801 and is connected to the fourth active layer 805, and the fourth gate electrode layer 802 is disposed in the second gate insulating layer 801.
In this embodiment, the first light-emitting unit and the second light-emitting unit are respectively located at two sides of the substrate 1, and respectively emit light toward one side of the substrate 1, and TFT structures are integrated on two sides of the substrate 1 where the first light-emitting unit and the second light-emitting unit are located, and the two TFT structures respectively trigger the first light-emitting unit and the second light-emitting unit to emit light, so that the pictures on two opposite sides of the display are forward-displayed, and it is convenient to control the two sides of the display to respectively display different pictures.
In another embodiment, the present application provides a method of manufacturing a dual-sided display device, the method comprising the steps of:
providing a substrate 1, wherein the substrate 1 can be a glass substrate 1;
preparing a light emitting unit on a substrate 1, wherein the light emitting unit comprises a first light emitting unit and a second light emitting unit, the first light emitting unit comprises a first anode layer 101 and a first cathode layer 102, the second light emitting unit comprises a second anode layer 201 and a second cathode layer 202, the first anode layer 101 and the second anode layer 201 are different, and the first cathode layer 102 and the second cathode layer 202 are different;
preparing a first signal line for the first light-emitting unit, wherein the first signal line is connected with the first anode layer 101, and the first anode layer 101 and the first cathode layer 102 control the first light-emitting unit to emit light to one side of the substrate 1 through the first signal line; preparing a second signal line for a second light-emitting unit, wherein the second signal line is connected with the second anode layer 201, and the second anode layer 201 and the second cathode layer 202 control the second light-emitting unit to emit light to one side of the substrate 1 through the second signal line; the first signal line and the second signal line are different.
Further, a light emitting unit is prepared on the substrate 1, including:
preparing a first light emitting unit on a substrate 1;
preparing a second light emitting unit on the substrate 1;
wherein the first light emitting unit and the second light emitting unit are not manufactured on the substrate 1 simultaneously when two cases occur. The two situations include:
case 1: the first light-emitting unit and the second light-emitting unit are positioned on different sides of the substrate 1;
case 2: the first light emitting unit and the second light emitting unit are on the same side of the substrate 1, but do not share the gate layer.
Based on either of the above two cases, the following specifically exemplifies a method of asynchronously producing the first light-emitting unit and the second light-emitting unit.
In another embodiment, the step of preparing the first light emitting unit on the substrate 1 specifically comprises: as shown in figure 4 of the drawings,
s101: preparing a first semiconductor layer 107;
as shown in fig. 5, a first metal oxide is deposited by physical vapor deposition, the first metal oxide is indium gallium zinc oxide IGZO (indium gallium zinc oxide), the IGZO is patterned by photolithography, the IGZO is patterned by wet etching, an oxalic acid-based chemical solution is used as an etchant, and the IGZO is rendered conductive by plasma treatment after the photoresist is stripped, thereby forming a first semiconductor layer 107 of the first active layer 106 near one end of the substrate 1.
S102: preparing a first drain layer 105;
as shown in fig. 6, a first metal layer is deposited by a physical vapor deposition method, a pattern of the first drain layer 105 is formed by a photolithography process, and a hydrogen peroxide-based chemical solution is used as an etchant for the metal material to form the first drain layer 105.
S103: preparing a first gate insulating layer 701;
as shown in fig. 7, the first gate insulating layer 301 is deposited by a chemical vapor deposition method on the basis of S102, and the first gate insulating layer 701 is patterned by a photolithography process using an oxidizing gas such as F-based gas as a dry etchant.
S104: preparing a first source layer 104 and a first active layer 106;
as shown in fig. 8, the first metal oxide that is IGZO is further deposited by a physical vapor phase method or a liquid metal injection method, the IGZO is subjected to a plasma treatment to obtain a first semiconductor layer at a position away from one end of the substrate 1, the first metal layer is further deposited by a physical vapor phase method or a liquid metal injection method, the first source layer 104 and the first active layer 106 are patterned by a photolithography process, a hydrogen peroxide system chemical solution is used as an etchant for the first metal layer, an oxalic acid system chemical solution is used as an etchant for the active layer, the first source layer 104 and the first active layer 106 are formed, and the first metal layer material in steps 2 and 4 may be an alloy material of Cu, moTi or MoTi/Cu.
S105: preparing a first passivation protection layer 501 and a second passivation protection layer 502;
as shown in fig. 9 and 10, the first passivation layer 501 and the second passivation layer 502 are deposited by a chemical vapor deposition method, the first passivation layer 501 and the second passivation layer 502 are patterned by a photolithography process, and an oxidizing gas such as an F-based gas is used as a dry etchant, and the first passivation layer 501 and the second passivation layer 502 may be made of SiNx, siOx, or an inorganic non-metallic film layer material sandwiched by SiNx and SiOx.
S106: preparing a first cathode layer 102 and a first pixel organic light emitting layer;
a first cathode layer 102 and a first pixel organic light emitting layer are sequentially deposited on the first passivation protection layer 501 and the second passivation protection layer 502, the material of the first cathode layer 102 is a first transparent material, and the first transparent material may be indium tin oxide ITO.
S107: preparing a first anode layer 101;
a first anode material, which may be an opaque metal material such as magnesium, silver, or the like, is physically deposited to form the first anode layer 101.
In another embodiment, the step of preparing the second light emitting unit on the substrate 1 specifically includes: a flowchart of the steps for manufacturing the second light-emitting unit is shown in fig. 11, and a diagram of the structure of the second light-emitting unit during the manufacturing process is not shown in the drawing.
S201: preparing a second semiconductor layer 207;
and depositing a second metal oxide by physical vapor sputtering, wherein the second metal oxide is IGZO, patterning the IGZO by a photoetching process, forming a pattern of the IGZO by wet etching, taking oxalic acid-based liquid medicine as an etchant, and conducting the IGZO by plasma treatment after the photoresist is stripped to form a second semiconductor layer 207 of the second active layer 206 close to one end of the substrate 1.
S202: preparing a second drain layer 205;
a second metal layer is deposited by a physical vapor phase method, a pattern of the second drain layer 205 is formed by a photolithography process, and a hydrogen peroxide solution is used as an etchant of the metal material to form the second drain layer 205.
S203: preparing a second gate insulating layer 801;
the second gate insulating layer 801 is deposited by a chemical vapor deposition method, and the second gate insulating layer 801 is patterned by a photolithography process using an oxidizing gas such as F-based gas as a dry etchant.
S204: preparing a second source layer 204 and a second active layer 206;
the second metal oxide which is IGZO is continuously deposited by a physical vapor phase method or a liquid metal injection method, the IGZO is subjected to conductor processing by plasma processing to obtain a second semiconductor layer 207 which is far away from one end of the substrate 1, then the second metal layer is continuously deposited by the physical vapor phase method or the liquid metal injection method, patterns of a second source layer 204 and a second active layer 206 are formed by a photoetching process, a hydrogen peroxide system liquid medicine is used as an etchant of the second metal layer, an oxalic acid system liquid medicine is used as an etchant of the active layer to form the second source layer 204 and the second active layer 206, and the material of the second metal layer in the step 2 and the step 4 can be Cu, moTi or an alloy material of MoTi/Cu.
S205: preparing a first passivation protection layer 501 and a second passivation protection layer 502;
the first passivation layer 501 and the second passivation layer 502 are deposited by a chemical vapor deposition method, the patterns of the first passivation layer 501 and the second passivation layer 502 are formed by a photolithography process, and oxidizing gases such as F-series gas are used as a dry etchant, and the first passivation layer 501 and the second passivation layer 502 can be made of SiNx, siOx, or an inorganic non-metallic film layer material sandwiched between SiNx and SiOx.
S206: preparing a second cathode layer 202 and a second pixel organic light emitting layer;
a second cathode layer 202 and a second pixel organic light emitting layer are sequentially deposited on the first passivation protection layer 501 and the second passivation protection layer 502, the second cathode layer 202 is made of a second transparent material, and the second transparent material may be indium tin oxide ITO.
S207: preparing a second anode layer 201;
a second anode material, which may be an opaque metallic material such as magnesium or silver, is physically deposited to form a second anode layer 201.
In another embodiment, a light emitting unit is prepared on a substrate 1, including:
preparing a first light emitting unit on a substrate 1;
preparing a second light emitting unit on the substrate 1;
wherein the first and second light emitting units are prepared simultaneously on the substrate 1 when the first and second light emitting units are on the same side.
The step of synchronously preparing the first light-emitting unit and the second light-emitting unit on the substrate 1 specifically comprises: as shown in figure 12 of the drawings,
s301: preparing a first semiconductor layer 107 and a second semiconductor layer 207;
as shown in fig. 13, a metal oxide of IGZO is deposited on the substrate 1 by physical vapor sputtering, the IGZO is patterned by a photolithography process, a pattern of IGZO may be formed by wet etching, an oxalic acid-based chemical solution may be used as an etchant, and the IGZO is conducted by a plasma treatment after photoresist stripping, thereby forming the first semiconductor layer 107 and the second semiconductor layer 207 on the substrate 1.
S302: preparing a first drain layer 105 and a second drain layer 205;
as shown in fig. 14, a first metal layer and a second metal layer are deposited by a physical vapor deposition method, and a pattern of the first drain layer 105 and the second drain layer 205 is formed by a photolithography process, and a hydrogen peroxide-based chemical solution is used as an etchant for the metal material.
S303: preparing a gate insulating layer 301;
as shown in fig. 15, a gate insulating layer 301 is deposited by a chemical vapor deposition method, and the gate insulating layer 301 is patterned by a photolithography process, and the gate insulating layer 301 covers both the first drain layer 105 and the second drain layer 205, using an oxidizing gas such as an F-based gas as a dry etchant.
S304: preparing a first source layer 104, a second source layer 204, a first active layer 106 and a second active layer 206;
as shown in fig. 16, a metal oxide of IGZO is further deposited by a physical vapor phase method or a liquid metal injection method, IGZO is subjected to a conductor forming process by a plasma treatment, then a first metal layer and a second metal layer are further deposited by a physical vapor phase method or a liquid metal injection method, patterns of a first source layer 104, a second source layer 204, a first active layer 106, and a second active layer 206 are formed by a photolithography process, the first source layer 104 and the second source layer 204 share a gate insulating layer 301, a hydrogen peroxide system chemical liquid is used as an etchant for the metal material, and an oxalic acid system chemical liquid is used as an etchant for the active layer, wherein the first metal layer and the second metal layer may be made of Cu, moTi, or an alloy material of MoTi/Cu.
S305: preparing a first passivation protection layer 501;
as shown in fig. 17, the first passivation layer 501 is deposited by a chemical vapor method, the first passivation layer 501 is patterned by a photolithography process, and an oxidizing gas such as F-based gas is used as a dry etchant.
S306: preparing a first cathode layer 102 and a first pixel organic light emitting layer;
a first cathode layer 102 and a first pixel organic light emitting layer are sequentially deposited on the first passivation protection layer 501.
S307: preparing a first anode layer 101;
as shown in fig. 18, a first anode material is physically deposited to form a first anode layer 101.
S308: preparing a second passivation protection layer 502;
as shown in fig. 19, the second passivation layer 502 is deposited by a chemical vapor deposition method, a pattern of the second passivation layer 502 is formed by a photolithography process, and an oxidizing gas such as an F-based gas is used as a dry etchant, and the first passivation layer 501 and the second passivation layer 502 may be made of SiNx, siOx, or an inorganic non-metallic film layer material sandwiched between SiNx and SiOx.
S309: preparing a second anode layer 201 and a second pixel organic light emitting layer;
the second anode layer 201 and the second pixel organic light emitting layer are sequentially deposited, and the first anode layer 101 and the second anode layer 201 may be made of an opaque metal material such as magnesium or silver.
S310: preparing a second cathode layer 202;
the second cathode layer 202 is deposited, and the transparent material of indium tin oxide ITO is used for each of the first cathode layer 102 and the second cathode layer 202.
In summary, in this embodiment, the first signal line is connected to the first anode layer 101 of the first light emitting unit, and the second signal line is connected to the second anode layer 201 of the second light emitting unit, that is, the light emitting units on the front and back sides of the display are driven to emit light by the dual signal lines and the dual electrode driving manner, so as to achieve independent display control and independent switch hole control of the first light emitting unit and the second light emitting unit of the display, so that both sides of the display are forward-displayed for viewers, and different pictures can be displayed at the same time, and meanwhile, the power of the light emitting unit on the other side is controlled to be turned off only by single-side display, so that the energy saving effect is better, the expandable manner is more, the first light emitting unit and the second light emitting unit on different film layers are integrated on the same substrate 1, the circuit integration level is higher, and the overall thickness of the display is further reduced.
The foregoing detailed description is directed to a dual-sided display device and a method for manufacturing the same provided in the embodiments of the present application, and the principles and embodiments of the present invention are described herein by using specific examples, which are only used to help understanding the method and the core idea of the present invention; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (3)
1. A two-sided display device, comprising:
a substrate;
the first light-emitting unit is arranged on one side of the substrate and comprises a first anode layer and a first cathode layer, and the first cathode layer and the first anode layer are sequentially stacked on the substrate;
the second light-emitting unit is also arranged on one side of the substrate and comprises a second anode layer and a second cathode layer, and the second cathode layer and the second anode layer are sequentially stacked on the substrate;
the first signal line is connected with the first anode layer and is used for controlling the first light-emitting unit to emit light to one side of the substrate;
the second signal line is connected with the second anode layer and is used for controlling the second light-emitting unit to emit light to the other side of the substrate;
wherein the first signal line and the second signal line are different, the first anode layer and the second anode layer are different, and the first cathode layer and the second cathode layer are different;
the first light-emitting unit and the second light-emitting unit are arranged on the same side of the substrate;
the first light emitting unit comprises a first source layer, a first drain layer and a first gate layer, the second light emitting unit comprises a second source layer, a second drain layer and a second gate layer, the first gate layer is arranged in a first area in a gate insulating layer, the second gate layer is arranged in a second area in the gate insulating layer, the first area and the second area are different, and the orthographic projection of the first area on the substrate is at least partially overlapped with the orthographic projection of the second area on the substrate;
first luminescence unit with still be equipped with first passivation protective layer and second passivation protective layer between the second luminescence unit, first passivation protective layer with second passivation protective layer all locates on the gate insulation layer, the projection of first passivation protective layer covers first luminescence unit, second passivation protective layer locates on the first passivation protective layer, and locate first anode layer with between the second anode layer.
2. A method for manufacturing a double-sided display device, which is applied to a manufacturing process of the double-sided display device according to claim 1, comprising the steps of:
providing a substrate;
preparing a light emitting unit on the substrate, wherein the light emitting unit comprises a first light emitting unit and a second light emitting unit, the first light emitting unit comprises a first anode layer and a first cathode layer, the second light emitting unit comprises a second anode layer and a second cathode layer, the first cathode layer and the first anode layer are sequentially stacked on the substrate, and the second cathode layer and the second anode layer are sequentially stacked on the substrate;
preparing a first signal line for the first light-emitting unit, wherein the first signal line is connected with a first anode layer, and the first anode layer and the first cathode layer control the first light-emitting unit to emit light to one side of the substrate through the first signal line;
preparing a second signal line for the second light-emitting unit, wherein the second signal line is connected with a second anode layer, and the second anode layer and the second cathode layer control the second light-emitting unit to emit light to one side of the substrate through the second signal line;
wherein the first signal line and the second signal line are different, the first anode layer and the second anode layer are different, and the first cathode layer and the second cathode layer are different.
3. The method of manufacturing a double-sided display device according to claim 2, wherein manufacturing a light emitting unit on the substrate includes:
preparing a first light emitting unit on the substrate;
preparing a second light emitting unit on the substrate;
wherein the first light emitting unit and the second light emitting unit are prepared on the substrate asynchronously.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110260452.3A CN113053970B (en) | 2021-03-10 | 2021-03-10 | Double-sided display device and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110260452.3A CN113053970B (en) | 2021-03-10 | 2021-03-10 | Double-sided display device and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113053970A CN113053970A (en) | 2021-06-29 |
| CN113053970B true CN113053970B (en) | 2023-01-24 |
Family
ID=76510976
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110260452.3A Active CN113053970B (en) | 2021-03-10 | 2021-03-10 | Double-sided display device and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113053970B (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610460A (en) * | 2003-06-30 | 2005-04-27 | 株式会社半导体能源研究所 | Light-emitting device and electronic device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009054328A (en) * | 2007-08-24 | 2009-03-12 | Hitachi Displays Ltd | Organic electroluminescent display device |
| WO2010010611A1 (en) * | 2008-07-23 | 2010-01-28 | パイオニア株式会社 | Display device using transparent light-emitting panel |
| CN103730485B (en) * | 2013-12-27 | 2016-09-07 | 京东方科技集团股份有限公司 | OLED array of double-sided display and preparation method thereof, display device |
| CN104851893B (en) * | 2015-05-28 | 2018-05-29 | 京东方科技集团股份有限公司 | A kind of array substrate and preparation method thereof, display device |
| CN105140260B (en) * | 2015-07-23 | 2018-04-17 | 京东方科技集团股份有限公司 | Organic LED array substrate and preparation method thereof, display device |
| CN108922907A (en) * | 2018-07-20 | 2018-11-30 | 深圳市华星光电技术有限公司 | Double-sided OLED display and preparation method thereof |
| CN112397527B (en) * | 2020-11-13 | 2022-06-10 | Tcl华星光电技术有限公司 | Array substrate and manufacturing method thereof |
-
2021
- 2021-03-10 CN CN202110260452.3A patent/CN113053970B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1610460A (en) * | 2003-06-30 | 2005-04-27 | 株式会社半导体能源研究所 | Light-emitting device and electronic device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113053970A (en) | 2021-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10916185B1 (en) | Array substrate, display panel, display device and array-substrate manufacturing method | |
| JP7326409B2 (en) | semiconductor equipment | |
| EP3306599B1 (en) | Array substrate and manufacturing method therefor, and display device | |
| JP6539597B2 (en) | Semiconductor device | |
| US10446633B2 (en) | Transparent OLED display with transparent storage capacitor and manufacturing method thereof | |
| US11348952B2 (en) | Connection structure and fabrication method thereof, array substrate and fabrication method thereof | |
| TWI424506B (en) | Method for manufacturing semiconductor device | |
| JP2019075593A (en) | Semiconductor device | |
| US11257810B2 (en) | Electrostatic discharge unit, array substrate and display panel | |
| US20210305336A1 (en) | Display panel | |
| WO2015100898A1 (en) | Thin-film transistor, tft array substrate and manufacturing method therefor, and display device | |
| JP2007258675A (en) | Tft substrate, reflective tft substrate, and method of manufacturing same | |
| CN104218041A (en) | Array substrate and production method thereof and display device | |
| CN110391283B (en) | Organic light emitting display panel and organic light emitting display device | |
| WO2020154875A1 (en) | Pixel unit and manufacturing method therefor, and double-sided oled display device | |
| US9230995B2 (en) | Array substrate, manufacturing method thereof and display device | |
| CN110289285B (en) | Display substrate, preparation method thereof and display panel | |
| CN107302061A (en) | Oled display substrate and preparation method thereof, display device | |
| CN114203778A (en) | Active matrix OLED display panel and preparation method thereof | |
| CN113053970B (en) | Double-sided display device and preparation method | |
| WO2022134134A1 (en) | Display module and production method therefor, and display device | |
| US20240016017A1 (en) | Display panel and method for manufacturing same | |
| CN109461836A (en) | The preparation method of flexible display panels, display device and flexible display panels | |
| WO2021169568A1 (en) | Display mother board and preparation method therefor, display substrate and display device | |
| CN113066818B (en) | Display screen and electronic equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |