CN108922907A - Double-sided OLED display and preparation method thereof - Google Patents
Double-sided OLED display and preparation method thereof Download PDFInfo
- Publication number
- CN108922907A CN108922907A CN201810806786.4A CN201810806786A CN108922907A CN 108922907 A CN108922907 A CN 108922907A CN 201810806786 A CN201810806786 A CN 201810806786A CN 108922907 A CN108922907 A CN 108922907A
- Authority
- CN
- China
- Prior art keywords
- layer
- grid
- opening
- light shield
- contact zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/128—Active-matrix OLED [AMOLED] displays comprising two independent displays, e.g. for emitting information from two major sides of the display
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/1201—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/121—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements
- H10K59/1213—Active-matrix OLED [AMOLED] displays characterised by the geometry or disposition of pixel elements the pixel elements being TFTs
Abstract
The present invention provides a kind of double-sided OLED display and preparation method thereof.There is top-illuminating OLED device and bottom emitting OLED-device simultaneously in double-sided OLED display of the invention, so as to realize double-sided display.In the double-sided OLED display, the transparent anode of bottom emitting OLED-device is arranged in the active layer for the TFT device for being used to drive bottom emitting OLED-device, and it will be used to drive the source/drain of the TFT device of top-illuminating OLED device as the reflection anode of top-illuminating OLED device, to reduce the quantity of double-sided OLED display light shield of demand in production, the cost of product is effectively reduced.
Description
Technical field
The present invention relates to field of display technology more particularly to a kind of double-sided OLED display and preparation method thereof.
Background technique
Flat-panel display device has many merits such as thin fuselage, power saving, radiationless, is widely used.It is existing
Flat-panel display device mainly includes that liquid crystal display device (Liquid Crystal Display, LCD) and organic electroluminescent are aobvious
Show device (Organic Light Emitting Display, OLED).OLED display device is due to being provided simultaneously with self-luminous, no
Need that backlight, contrast are high, thickness is thin, visual angle is wide, reaction speed is fast, can be used for flexibility panel, use temperature range extensively, structure
It makes and the excellent characteristics such as processing procedure is simpler, is unanimously acknowledged as the mainstream technology of next-generation display, has obtained major display
The favor of producer.OLED display device generally includes：Substrate, the anode on substrate, the hole injection layer on anode,
Hole transmission layer on hole injection layer, the luminescent layer on hole transmission layer, the electron-transport on luminescent layer
Layer, the electron injecting layer on electron transfer layer and the cathode on electron injecting layer, luminescence mechanism are semiconductor material
Material and luminous organic material pass through carrier injection and composite guide photoluminescence under electric field driven.Specifically, OLED display device
Tin indium oxide (ITO) electrode and metal electrode are generallyd use respectively as anode and cathode, under certain voltage driving, electronics and
Hole is injected into electron injecting layer and hole injection layer from cathode and anode respectively, and electrons and holes pass through electron transfer layer respectively
Luminescent layer is moved to hole transmission layer, and is met in luminescent layer, exciton is formed and excites light emitting molecule, the latter passes through spoke
It penetrates relaxation and issues visible light.
With the development of display technology, reaction speed is fast, high resolution, image quality in addition to requiring display device to have by consumer
Outside fine and smooth feature, the breakthrough in function and display pattern is also pursued.Therefore, double-sided OLED display comes into being, two-sided
OLED display can also extend image spacing other than having the various characteristics of common OLED display, be switched fast and locate
Multiple display pictures are managed, the cost of manufacture of display has not only been saved, can more save the space of device.Current double-sided OLED
The light shield quantity that display is needed in production is more, leads to the higher cost of product, does not meet the desired high sexual valence of consumer
The requirement of ratio.
Summary of the invention
The purpose of the present invention is to provide a kind of double-sided OLED display, demand when can be realized double-sided display, and making
Light shield quantity it is few, product cost is low.
Another object of the present invention is to provide a kind of production method of double-sided OLED display, the light shield quantity of demand
Few, product cost is low.
To achieve the above object, present invention firstly provides a kind of double-sided OLED displays, including：Substrate, interval are set to institute
State the first active layer and the second active layer above substrate, be respectively arranged on first active layer and the second active layer on first
Gate insulating layer and second grid insulating layer, first be respectively arranged on the first grid insulating layer and second grid insulating layer
Grid and second grid, covering first active layer, first grid, the second active layer and second grid interlayer insulating film with
And the first source/drain, the second source/drain and reflection anode on the interlayer insulating film；
First active layer include the first channel and the first contact zone being connect respectively with the first channel both ends and thoroughly
Bright anode；Second active layer includes the second channel and the second contact zone connecting respectively with the second channel both ends and third
Contact zone；The first grid insulating layer is correspondingly arranged above the first channel；The second grid insulating layer is correspondingly arranged at second
Above channel；The interlayer insulating film is equipped with the first opening being located above the first contact zone, the above transparent anode
Two openings, the third opening above the second contact zone and the 4th opening above third contact zone, first source/
Drain electrode is contacted through the first opening with the first contact zone, and second source/drain is open through third and contacts with the second contact zone, described
Reflection anode is contacted through the 4th opening with third contact zone.
The double-sided OLED display further includes the blunt of covering first source/drain, the second source/drain and reflection anode
Change layer, the first luminescent layer on transparent anode, the reflective cathode on the first luminescent layer and passivation layer, be set to reflection sun
The second luminescent layer on extremely and the transparent cathode on passivation layer and the second luminescent layer；
Second opening runs through passivation layer and interlayer insulating film；The passivation layer is equipped with the be located above reflection anode
Five openings；First luminescent layer is located in the second opening；Second luminescent layer is located in the 5th opening.
First luminescent layer is red light luminescent layer, green light emitting layer or blue light-emitting；Second luminescent layer is red
Light luminescent layer, green light emitting layer or blue light-emitting；
The mode that first luminescent layer and the second luminescent layer are all made of inkjet printing makes.
The double-sided OLED display further includes being set on substrate and spaced first light shield layer and the second light shield layer
And the buffer layer of the first light shield layer of covering and the second light shield layer；First active layer and the second active layer are set to described slow
It rushes on layer；First light shield layer and the second light shield layer are located at the lower section of the first active layer and the second active layer, and described
Transparent anode is at least partially disposed at the top in region between the first light shield layer and the second light shield layer, and the second opening correspondence is transparent
The part of anode top in region between the first light shield layer and the second light shield layer is arranged.
The material of the substrate is glass；
The material of first light shield layer and the second light shield layer is Mo；
The buffer layer is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The buffering
Layer with a thickness of
The material of first channel and the second channel is metal-oxide semiconductor (MOS)；It is first contact zone, transparent
The material of anode, the second contact zone and third contact zone is through conductorization treated metal-oxide semiconductor (MOS)；
The first grid insulating layer and second grid insulating layer be SiOx layers of single layer, single layer SiNx layer or SiOx layers with
The stepped construction of SiNx layer；The thickness of the first grid insulating layer and second grid insulating layer is
The material of the first grid and second grid is one of Mo, Al, Cu and Ti or a variety of alloys；It is described
The thickness of first grid and second grid is
The interlayer insulating film is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；It is described
Interlayer insulating film with a thickness of
First source/drain, the second source/drain and reflection anode include the metal layer set gradually from bottom to top and
ITO layer, the material of the metal layer are one of Al, Ti, Ag or a variety of alloys, first source/drain, the second source/
It drains and the thickness of reflection anode is
The passivation layer is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The passivation
Layer with a thickness of
The material of the reflective cathode is Al；
The material of the transparent cathode is Mg or Ag.
The present invention also provides a kind of production methods of double-sided OLED display, include the following steps：
Step S1, substrate is provided；
Step S2, rectangular on substrate at semiconductor material layer and to pattern, form the first semiconductor pattern and the second half
Conductive pattern；
Step S3, the insulation material layer of the first semiconductor pattern of covering and the second semiconductor pattern is formed and in insulating materials
The first conductive material layer is formed on layer；
Step S4, the first conductive material layer is patterned, forms the first grid being located above the first semiconductor pattern
Pole and the second grid above the second semiconductor pattern；
Step S5, it is to block to be etched insulation material layer with first grid and second grid, removes insulation material layer
The part not covered by first grid and second grid, forms the first grid insulating layer being located on the first semiconductor pattern and position
In the second grid insulating layer on the second semiconductor pattern；
It step S6, is to block to the first semiconductor pattern and the progress of the second semiconductor pattern with first grid and second grid
Conductorization processing, forms the first active layer and the second active layer；First active layer includes the first channel and respectively with first
The first contact zone and transparent anode of channel both ends connection；Second active layer include the second channel and respectively with the second channel
The second contact zone and third contact zone of both ends connection；First grid is corresponding to be located above the first channel, and second grid corresponds to position
Above the second channel；
Step S7, interlayer insulating film is formed on the first active layer, first grid, the second active layer and second grid to go forward side by side
Row patterning forms the first opening being located above the first contact zone, the third opening above the second contact zone and is located at
The 4th opening above third contact zone；
Step S8, form the second conductive material layer on interlayer insulating film and patterned, formed first source at interval/
Drain electrode, the second source/drain and reflection anode；First source/drain is contacted through the first opening with the first contact zone, and described second
Source/drain is open through third and contacts with the second contact zone, and the reflection anode is contacted through the 4th opening with third contact zone.
The production method of the double-sided OLED display further includes：
Step S9, passivation layer is formed in interlayer insulating film, the first source/drain, the second source/drain and reflection anode, it is right
The passivation layer and interlayer insulating film carry out patterned process, form the second opening being located above transparent anode and are located at anti-
The 5th opening above shining sun pole；
Step S10, on transparent anode in forming the first luminescent layer in the second opening, in the 5th opening in reflection anode
The second luminescent layer of interior formation；
Step S11, reflective cathode is formed on passivation layer and the first luminescent layer, is formed on passivation layer and the second luminescent layer
Transparent cathode.
First luminescent layer is red light luminescent layer, green light emitting layer or blue light-emitting；Second luminescent layer is red
Light luminescent layer, green light emitting layer or blue light-emitting；
It is luminous in forming first in the second opening on transparent anode by the way of inkjet printing in the step S10
Layer and in reflection anode in the 5th opening in formed the second luminescent layer.
It is additionally provided with after the step S1 and light-shielding material layers is formed on the substrate and pattern, formed spaced first and hide
Photosphere and the second light shield layer, later formed covering the first light shield layer and the second light shield layer buffer layer the step of；
In the step S2, semiconductor material layer is formed on the buffer layer and is patterned, formation is located at
The first semiconductor pattern and the second semiconductor pattern above first light shield layer and the second light shield layer；First semiconductor pattern
The top in part region between the first light shield layer and the second light shield layer；
After the step S6, the transparent anode is at least partially disposed at region between the first light shield layer and the second light shield layer
Top；
The corresponding transparent anode area between the first light shield layer and the second light shield layer of the second opening that the step S9 is formed
The part of the top in domain is arranged.
The material of the substrate is glass；
The material of the light-shielding material layers is Mo；
The buffer layer is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The buffering
Layer with a thickness of
The semiconductor material layer is metal-oxide semiconductor (MOS)；
The insulation material layer is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；It is described
Insulation material layer with a thickness of
The material of first conductive material layer is one of Mo, Al, Cu and Ti or a variety of alloys；Described first
Conductive material layer with a thickness of
The interlayer insulating film is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；It is described
Interlayer insulating film with a thickness of
Second conductive material layer includes the metal layer set gradually from bottom to top and ITO layer, the material of the metal layer
Material is one of Al, Ti, Ag or a variety of alloys, second conductive material layer with a thickness of
The passivation layer is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The passivation
Layer with a thickness of
The material of the reflective cathode is Al；
The material of the transparent cathode is Mg or Ag.
Beneficial effects of the present invention：There is top-illuminating OLED device and bottom hair simultaneously in double-sided OLED display of the invention
Light OLED device, so as to realize double-sided display.In the double-sided OLED display, by the transparent anode of bottom emitting OLED-device
It is arranged in the active layer of TFT device for driving bottom emitting OLED-device, and will be used to drive top-illuminating OLED device
TFT device reflection anode of the source/drain as top-illuminating OLED device, made to reduce double-sided OLED display
When demand light shield quantity, effectively reduce the cost of product.The production method of double-sided OLED display of the invention needs
The light shield quantity asked is few, and product cost is low.
Detailed description of the invention
For further understanding of the features and technical contents of the present invention, it please refers to below in connection with of the invention detailed
Illustrate and attached drawing, however, the drawings only provide reference and explanation, is not intended to limit the present invention.
In attached drawing,
Fig. 1 is the structural schematic diagram of double-sided OLED display of the invention；
Fig. 2 is the flow chart of the production method of double-sided OLED display of the invention；
Fig. 3 is the schematic diagram of the step S1 of the production method of double-sided OLED display of the invention；
Fig. 4 is the schematic diagram of the step S2 of the production method of double-sided OLED display of the invention；
Fig. 5 is the schematic diagram of the step S3 of the production method of double-sided OLED display of the invention；
Fig. 6 and Fig. 7 is the schematic diagram of the step S4 of the production method of double-sided OLED display of the invention；
Fig. 8 is the schematic diagram of the step S5 and step S6 of the production method of double-sided OLED display of the invention；
Fig. 9 is the schematic diagram of the step S7 of the production method of double-sided OLED display of the invention；
Figure 10 is the schematic diagram of the step S8 of the production method of double-sided OLED display of the invention；
Figure 11 is the schematic diagram of the step S9 of the production method of double-sided OLED display of the invention.
Specific embodiment
Further to illustrate technological means and its effect adopted by the present invention, below in conjunction with preferred implementation of the invention
Example and its attached drawing are described in detail.
Referring to Fig. 1, double-sided OLED display of the invention includes：Substrate 10, interval are set to 10 top of substrate
First active layer 21 and the second active layer 22, the first grid being respectively arranged on first active layer 21 and the second active layer 22
Insulating layer 31 and second grid insulating layer 32 are respectively arranged on the first grid insulating layer 31 and second grid insulating layer 32
First grid 41 and second grid 42, covering first active layer 21, first grid 41, the second active layer 22 and second grid
42 interlayer insulating film 50 and the first source/drain 61, the second source/drain 62 and reflection on the interlayer insulating film 50
Anode 63.
First active layer 21 includes the first channel 211 and what is connect respectively with 211 both ends of the first channel first connect
Touch area 212 and transparent anode 213.Second active layer 22 include the second channel 221 and respectively with 221 both ends of the second channel
The second contact zone 222 and third contact zone 223 of connection.The first grid insulating layer 31 is correspondingly arranged on the first channel 211
Side.The second grid insulating layer 32 is correspondingly arranged at 221 top of the second channel.The interlayer insulating film 50 is equipped with to be connect positioned at first
It touches the first opening 51 of 212 top of area, the second opening 52 above transparent anode 213, be located above the second contact zone 222
Third opening 53 and positioned at third contact zone 223 above the 4th opening 54, first source/drain 61 through first be open 51
It is contacted with the first contact zone 212, second source/drain 62 is contacted through third opening 53 with the second contact zone 222, the reflection
Anode 63 is contacted through the 4th opening 54 with third contact zone 223.
Specifically, the double-sided OLED display further include covering first source/drain 61, the second source/drain 62 and
The passivation layer 70 of reflection anode 63, is set to the first luminescent layer 80 and passivation layer at the first luminescent layer 80 on transparent anode 213
Reflective cathode 90 on 70, the second luminescent layer 100 in reflection anode 63 and be set to passivation layer 70 and the second luminescent layer
Transparent cathode 110 on 100.Second opening 52 runs through passivation layer 70 and interlayer insulating film 50.The passivation layer 70 is equipped with
The 5th opening 72 above reflection anode 63.First luminescent layer 80 is located in the second opening 52.Described second shines
Layer 100 is located in the 5th opening 72.
Specifically, first luminescent layer 80 is red light luminescent layer, green light emitting layer or blue light-emitting；Second hair
Photosphere 100 is red light luminescent layer, green light emitting layer or blue light-emitting.
Specifically, the mode that first luminescent layer 80 and the second luminescent layer 100 are all made of inkjet printing (IJP) makes.
Specifically, the double-sided OLED display further include be set to substrate 10 on and spaced first light shield layer 121
And second light shield layer 122 and covering the first light shield layer 121 and the second light shield layer 122 buffer layer 130.First active layer
21 and second active layer 22 be set to the buffer layer 130 on.First light shield layer 121 and the second light shield layer 122 distinguish position
In the lower section of the first active layer 21 and the second active layer 22, and the transparent anode 213 is at least partially disposed at the first light shield layer 121
The top in region between the second light shield layer 122, the corresponding transparent anode 213 of second opening 52 are located at the first light shield layer 121
The part setting of the top in region between the second light shield layer 122.
Preferably, first light shield layer 121 blocks the first channel 211 completely, and second light shield layer 122 blocks completely
Second channel 221, to prevent extraneous light from having an impact to the characteristic of the first channel 211 and the second channel 221.
Specifically, the material of the substrate 10 can be glass.
Specifically, the material of first light shield layer 121 and the second light shield layer 122 can be metal material, such as molybdenum
(Mo)。
Specifically, the buffer layer 130 can be mono-layer oxidized silicon (SiOx) layer, single-layer silicon nitride silicon (SiNx) layer or SiOx layers
With the stepped construction of SiNx layer.The buffer layer 130 with a thickness of
Specifically, the material of first channel 211 and the second channel 221 is metal-oxide semiconductor (MOS).Described
One contact zone 212, transparent anode 213, the second contact zone 222 and third contact zone 223 material be after conductorization processing
Metal-oxide semiconductor (MOS).
Further, the metal-oxide semiconductor (MOS) can be indium gallium zinc oxide (IGZO), indium zinc tin oxide
(IZTO), indium gallium zinc tin oxide (IGZTO) or other common metal-oxide semiconductor (MOS)s.
Specifically, the first grid insulating layer 31 and second grid insulating layer 32 can be SiOx layers of single layer, single layer
The stepped construction of SiNx layer or SiOx layers and SiNx layer.The thickness of the first grid insulating layer 31 and second grid insulating layer 32
It is
Specifically, the material of the first grid 41 and second grid 42 can be Mo, aluminium (Al), copper (Cu) and titanium (Ti)
One of or a variety of alloys.The thickness of the first grid 41 and second grid 42 is
Specifically, the interlayer insulating film 50 can be the layer of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer
Stack structure.The interlayer insulating film 50 with a thickness of
Specifically, first source/drain 61, the second source/drain 62 and reflection anode 63 include from bottom to top successively
The metal layer and ITO layer of setting, the material of the metal layer can be one of high reflecting metals such as Al, Ti, silver (Ag) or more
The alloy of kind, the thickness of first source/drain 61, the second source/drain 62 and reflection anode 63 areIt is logical
Setting ITO layer is crossed, guarantees to make the second luminescent layer 100 in reflection anode 63 and after transparent cathode 110 obtains OLED device, it should
OLED device can work normally.
Specifically, the passivation layer 70 can be the stacking knot of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer
Structure.The passivation layer 70 with a thickness of
Specifically, the material of the reflective cathode 90 can be Al.
Specifically, the material of the transparent cathode 110 can be magnesium (Mg) or Ag.
It should be noted that in double-sided OLED display of the invention, by transparent anode 213, the first luminescent layer 80 and anti-
It penetrates cathode 90 and forms bottom emitting OLED-device, top is formed by reflection anode 63, the second luminescent layer 100 and transparent cathode 110 and is shone
OLED device so that the two sides of the double-sided OLED display are able to carry out luminescence display, namely can be realized double-sided display.With
This forms the TFT for driving bottom emitting OLED-device simultaneously, by first grid 41, the first active layer 21, the first source/drain 61
Device is made of second grid 42, the second active layer 22, the second source/drain 62, reflection anode 63 for driving top-illuminating OLED
The TFT device of device, the transparent anode 213 for constituting bottom emitting OLED-device are arranged in the first active layer 21, thus compared to
The prior art, the step of anode that bottom emitting OLED-device is fabricated separately is omitted, and reflection anode 63 shines as top simultaneously
The anode of OLED device and source/drain for driving top-illuminating OLED device, to compared with the prior art, can save together
The step of reflection anode is fabricated separately, and can be formed directly on passivation layer 70 for the second luminescent layer 100 to be arranged the
Five openings 72 no longer need to production planarization layer and pixel defining layer, save planarization layer and pixel compared with the prior art
The material of definition layer and light shield for patterning planarization layer and pixel defining layer, to reduce the light of demand when production
Cover quantity, product cost reduce.Further, the present invention also makes the first luminescent layer 80 and second by way of inkjet printing
Luminescent layer 100 without using fine mask plate, therefore can be advantageously implemented the large scale demand of double-sided OLED display.
Referring to Fig. 2, based on the same inventive concept, the present invention also provides a kind of production method of double-sided OLED display,
Include the following steps：
Step S1, referring to Fig. 3, providing substrate 10.
Specifically, the material of the substrate 10 can be glass.
Specifically, the step S1 also cleans substrate 10 after providing substrate 10.
Specifically, it is additionally provided with after the step S1 and forms light-shielding material layers on substrate 10 and pattern, form interval
The first light shield layer 121 and the second light shield layer 122 that are arranged forms the first light shield layer 121 of covering and the second light shield layer 122 later
The step of buffer layer 130.
Specifically, the material of the light-shielding material layers is metal, such as Mo.
Specifically, the buffer layer 130 is the stepped construction of single layer SiOx layers, SiNx or SiOx layers of single layer and SiNx layer.
The buffer layer 130 with a thickness of
Step S2, referring to Fig. 4, forming semiconductor material layer above substrate 10 and patterning, the first semiconductor is formed
Pattern 23 and the second semiconductor pattern 24,.
Specifically, in the step S2, semiconductor material layer is formed on the buffer layer 130 and is patterned, shape
At the first semiconductor pattern 23 and the second semiconductor pattern for being located at 122 top of the first light shield layer 121 and the second light shield layer
24.The top in 23 part of the first semiconductor pattern region between the first light shield layer 121 and the second light shield layer 122.
Specifically, the semiconductor material layer is metal-oxide semiconductor (MOS).
Further, the metal-oxide semiconductor (MOS) can be IGZO, IZTO, IGZTO or other common metal oxidations
Object semiconductor.
Step S3, referring to Fig. 5, forming the insulating materials of the first semiconductor pattern 23 of covering and the second semiconductor pattern 24
Layer 30 simultaneously forms the first conductive material layer 40 on insulation material layer 30.
Specifically, the insulation material layer 30 is the stacking knot of single layer SiOx layers, SiNx or SiOx layers of single layer and SiNx layer
Structure.The insulation material layer 50 with a thickness of
Specifically, the material of first conductive material layer 40 is one of Mo, Al, Cu and Ti or a variety of alloys.
First conductive material layer 60 with a thickness of
Step S4, it referring to Fig. 7, being patterned to the first conductive material layer 40, is formed and is located at the first semiconductor pattern
The first grid 41 and the second grid 42 above the second semiconductor pattern 24 of 23 tops.
Specifically, the step S4 is specially：Photoresist layer is first formed on the first conductive material layer 40 and carries out figure
Case, to as shown in fig. 6, form the first light for being located at 24 top of the first semiconductor pattern 23 and the second semiconductor pattern
Stop block 141 and the second photoresist block 142 are then to block to the first conductive material with the first photoresist block 141 and the second photoresist block 142
Layer 40 is etched, and corresponding first photoresist block 141 forms first grid 41, and corresponding second photoresist block 142 forms second grid 42.
Step S5, referring to Fig. 8, being to block to lose insulation material layer 30 with first grid 41 and second grid 42
It carves, the part that removal insulation material layer 30 is not covered by first grid 41 and second grid 42 forms and is located at the first semiconductor figure
First grid insulating layer 31 in case 23 and the second grid insulating layer 32 on the second semiconductor pattern 24.
Step S6, referring to Fig. 8, being to block to the first semiconductor pattern 23 and the with first grid 41 and second grid 42
Two semiconductor patterns 24 carry out conductor processing, form the first active layer 21 and the second active layer 22.First active layer 21
The first contact zone 212 and transparent anode 213 being connect including the first channel 211 and respectively with 211 both ends of the first channel.Described
Two active layers 22 include the second channel 221 and contact respectively with the second contact zone 222 of 221 both ends of the second channel connection and third
Area 223.First grid 41 is corresponding to be located at 211 top of the first channel, and second grid 42 is corresponding to be located at 221 top of the second channel.
Specifically, in the step S6 with first grid 41 and second grid 42 be block to the first semiconductor pattern 23 and
Second semiconductor pattern 24 carries out conductorization processing：It is to block to lead to the first half with first grid 41 and second grid 42
Body pattern 23 and the second semiconductor pattern 24 carry out plasma and lead processing, so that the first semiconductor pattern 23 is not by first grid
The electric conductivity of 41 parts blocked enhances, and the conduction for the part that the second semiconductor pattern 24 is not blocked by second grid 42
Property enhancing, to form the first active layer 21 and the second active layer 22.
Specifically, after the step S6, the transparent anode 213 is at least partially disposed at the first light shield layer 121 and second
The top in region between light shield layer 122.
Step S7, referring to Fig. 9, on the first active layer 21, first grid 41, the second active layer 22 and second grid 42
It forms interlayer insulating film 50 and is patterned, formed and be located at the first opening 51 of 212 top of the first contact zone, connect positioned at second
Touch the third opening 53 of 222 top of area and the 4th opening 54 above third contact zone 223.
Specifically, the interlayer insulating film 50 is the stacking knot of single layer SiOx layers, SiNx or SiOx layers of single layer and SiNx layer
Structure.The interlayer insulating film 50 with a thickness of
Step S8, it referring to Fig. 10, forming the second conductive material layer on interlayer insulating film 50 and being patterned, is formed
First source/drain 61, the second source/drain 62 and the reflection anode 63 at interval.First source/drain 61 through first opening 51 with
The contact of first contact zone 212, second source/drain 62 are contacted through third opening 53 with the second contact zone 222, the reflection sun
Pole 63 is contacted through the 4th opening 54 with third contact zone 223.
Specifically, second conductive material layer includes the metal layer set gradually from bottom to top and ITO layer, the metal
The material of layer can be one of high reflecting metals such as Al, Ti, silver (Ag) or a variety of alloys, second conductive material layer
With a thickness ofBy the way that ITO layer is arranged, guarantee subsequent to have made luminescent layer in reflection anode 63 and cathode obtains
After OLED device, which can be worked normally.
Step S9, Figure 11 is please referred to, in interlayer insulating film 50, the first source/drain 61, the second source/drain 62 and reflection sun
Passivation layer 70 is formed on pole 63, and patterned process is carried out to the passivation layer 70 and interlayer insulating film 50, is formed and is located at transparent sun
Second opening 52 of 213 top of pole and the 5th opening 72 above reflection anode 63.
Specifically, the corresponding transparent anodes 213 of the second opening 52 that the step S9 is formed are located at the first light shield layer 121 and the
The part setting of the top in region between two light shield layers 122.
Step S10, referring to Fig. 1, in forming the first luminescent layer 80 in the second opening 52 on transparent anode 213, anti-
On shining sun pole 63 in the 5th opening 72 in form the second luminescent layer 100.
Specifically, first luminescent layer 80 is red light luminescent layer, green light emitting layer or blue light-emitting.Second hair
Photosphere 100 is red light luminescent layer, green light emitting layer or blue light-emitting.
Specifically, in the step S10, in the second opening 52 on transparent anode 213 by the way of inkjet printing
Formed the first luminescent layer 80 and in reflection anode 63 in the 5th opening 72 in form the second luminescent layer 100.
Step S11, reflective cathode 90 is formed on passivation layer 70 and the first luminescent layer 80, is shone in passivation layer 70 and second
Transparent cathode 110 is formed on layer 100.
Specifically, the material of the reflective cathode 90 is Al.
Specifically, the material of the transparent cathode 110 is Mg or Ag.
It should be noted that in double-sided OLED display made from the production method of double-sided OLED display of the invention,
Bottom emitting OLED-device is formed by transparent anode 213, the first luminescent layer 80 and reflective cathode 90, is sent out by reflection anode 63, second
Photosphere 100 and transparent cathode 110 form top-illuminating OLED device, so that the two sides of the double-sided OLED display are able to carry out hair
Light is shown, namely can be realized double-sided display.At the same time, by first grid 41, the first active layer 21, the first source/drain 61
Form the TFT device for driving bottom emitting OLED-device, by second grid 42, the second active layer 22, the second source/drain 62,
Reflection anode 63 forms the TFT device for driving top-illuminating OLED device, constitutes the transparent anode 213 of bottom emitting OLED-device
It is arranged in the first active layer 21, so that compared with the prior art, the anode that bottom emitting OLED-device is fabricated separately is omitted
Step, and reflection anode 63 while the source/drain as the anode of top-illuminating OLED device and for driving top-illuminating OLED device
Pole, to compared with the prior art, can save the step of reflection anode is fabricated separately together, and can be directly in passivation layer 70
It is upper formed for be arranged the second luminescent layer 100 the 5th opening 72, compared with the prior art, no longer need to make planarization layer and
Pixel defining layer saves the material of planarization layer and pixel defining layer and for patterning planarization layer and pixel defining layer
Light shield, to reduce the light shield quantity of demand when production, product cost is reduced.Further, the present invention also passes through ink-jet
The mode of printing makes the first luminescent layer 80 and the second luminescent layer 100, without using fine mask plate, therefore can be conducive to reality
The large scale demand of existing double-sided OLED display.
In conclusion having top-illuminating OLED device and bottom illuminating OLED device in double-sided OLED display of the invention simultaneously
Part, so as to realize double-sided display.In the double-sided OLED display, by the setting of the transparent anode of bottom emitting OLED-device with
In the active layer of the TFT device of driving bottom emitting OLED-device, and the TFT device that will be used to drive top-illuminating OLED device
Reflection anode of the source/drain as top-illuminating OLED device, to reduce double-sided OLED display demand in production
The quantity of light shield effectively reduces the cost of product.The light shield of the production method demand of double-sided OLED display of the invention
Quantity is few, and product cost is low.
The above for those of ordinary skill in the art can according to the technique and scheme of the present invention and technology
Other various corresponding changes and modifications are made in design, and all these change and modification all should belong to the claims in the present invention
Protection scope.
Claims (10)
1. a kind of double-sided OLED display, which is characterized in that including：Substrate (10), interval are set to above the substrate (10)
First active layer (21) and the second active layer (22) are respectively arranged on first active layer (21) and the second active layer (22)
First grid insulating layer (31) and second grid insulating layer (32) are respectively arranged on the first grid insulating layer (31) and second gate
First grid (41) and second grid (42), covering first active layer (21), first grid on pole insulating layer (32)
(41), it the interlayer insulating film (50) of the second active layer (22) and second grid (42) and is set on the interlayer insulating film (50)
The first source/drain (61), the second source/drain (62) and reflection anode (63)；
First active layer (21) include the first channel (211) and connect respectively with the first channel (211) both ends first
Contact zone (212) and transparent anode (213)；Second active layer (22) includes the second channel (221) and respectively with second
The second contact zone (222) and third contact zone (223) of channel (221) both ends connection；The first grid insulating layer (31) is right
It should be set to above the first channel (211)；The second grid insulating layer (32) is correspondingly arranged above the second channel (221)；It is described
Interlayer insulating film (50) is equipped with the first opening (51) being located above the first contact zone (212), is located above transparent anode (213)
Second opening (52), be located at the second contact zone (222) above third opening (53) and be located at third contact zone (223) above
The 4th opening (54), first source/drain (61) contacts through the first opening (51) with the first contact zone (212), described the
Two source/drains (62) are contacted through third opening (53) with the second contact zone (222), and the reflection anode (63) is through the 4th opening
(54) it is contacted with third contact zone (223).
2. double-sided OLED display as described in claim 1, which is characterized in that further include covering first source/drain
(61), the passivation layer (70) of the second source/drain (62) and reflection anode (63), first on transparent anode (213) shine
Layer (80), for being set to the first luminescent layer (80) and reflective cathode (90) on passivation layer (70), being set on reflection anode (63)
Two luminescent layers (100) and the transparent cathode (110) being set on passivation layer (70) and the second luminescent layer (100)；
Second opening (52) runs through passivation layer (70) and interlayer insulating film (50)；The passivation layer (70), which is equipped with, is located at reflection
The 5th opening (72) above anode (63)；First luminescent layer (80) is located in the second opening (52)；Described second shines
Layer (100) is located in the 5th opening (72).
3. double-sided OLED display as claimed in claim 2, which is characterized in that first luminescent layer (80) is red light-emitting
Layer, green light emitting layer or blue light-emitting；Second luminescent layer (100) is red light luminescent layer, green light emitting layer or blue light hair
Photosphere；
The mode that first luminescent layer (80) and the second luminescent layer (100) are all made of inkjet printing makes.
4. double-sided OLED display as claimed in claim 2, which is characterized in that further include being set on substrate (10) and being spaced to set
The first light shield layer (121) and the second light shield layer (122) and covering the first light shield layer (121) and the second light shield layer (122) set
Buffer layer (130)；First active layer (21) and the second active layer (22) are set on the buffer layer (130)；It is described
First light shield layer (121) and the second light shield layer (122) are located at the lower section of the first active layer (21) and the second active layer (22),
And the transparent anode (213) is at least partially disposed at the upper of region between the first light shield layer (121) and the second light shield layer (122)
Side, second opening (52) corresponding transparent anode (213) is between the first light shield layer (121) and the second light shield layer (122)
The part of the top in region is arranged.
5. double-sided OLED display as claimed in claim 4, which is characterized in that
The material of the substrate (10) is glass；
The material of first light shield layer (121) and the second light shield layer (122) is Mo；
The buffer layer (130) is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The buffering
Layer (130) with a thickness of
The material of first channel (211) and the second channel (221) is metal-oxide semiconductor (MOS)；First contact zone
(212), the material of transparent anode (213), the second contact zone (222) and third contact zone (223) is after conductorization processing
Metal-oxide semiconductor (MOS)；
The first grid insulating layer (31) and second grid insulating layer (32) are SiOx layers of single layer, single layer SiNx layer or SiOx
The stepped construction of layer and SiNx layer；The thickness of the first grid insulating layer (31) and second grid insulating layer (32) is
The material of the first grid (41) and second grid (42) is one of Mo, Al, Cu and Ti or a variety of alloys；
The thickness of the first grid (41) and second grid (42) is
The interlayer insulating film (50) is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；It is described
Interlayer insulating film (50) with a thickness of
First source/drain (61), the second source/drain (62) and reflection anode (63) include setting gradually from bottom to top
Metal layer and ITO layer, the material of the metal layer are one of Al, Ti, Ag or a variety of alloys, first source/drain
(61), the thickness of the second source/drain (62) and reflection anode (63) is
The passivation layer (70) is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The passivation
Layer (70) with a thickness of
The material of the reflective cathode (90) is Al；
The material of the transparent cathode (110) is Mg or Ag.
6. a kind of production method of double-sided OLED display, which is characterized in that include the following steps：
Step S1, substrate (10) are provided；
Step S2, semiconductor material layer is formed above the substrate (10) and is patterned, and the first semiconductor pattern (23) and the are formed
Two semiconductor patterns (24)；
Step S3, formed covering the first semiconductor pattern (23) and the second semiconductor pattern (24) insulation material layer (30) and
The first conductive material layer (40) are formed on insulation material layer (30)；
Step S4, the first conductive material layer (40) is patterned, forms the be located above the first semiconductor pattern (23)
One grid (41) and the second grid (42) being located above the second semiconductor pattern (24)；
It step S5, is to block to be etched insulation material layer (30) with first grid (41) and second grid (42), removal is exhausted
The part that edge material layer (30) is not covered by first grid (41) and second grid (42), forms and is located at the first semiconductor pattern
(23) the first grid insulating layer (31) on and the second grid insulating layer (32) on the second semiconductor pattern (24)；
It step S6, is to block to the first semiconductor pattern (23) and the second semiconductor with first grid (41) and second grid (42)
Pattern (24) carries out conductor processing, forms the first active layer (21) and the second active layer (22)；First active layer (21)
The first contact zone (212) and transparent anode being connect including the first channel (211) and respectively with the first channel (211) both ends
(213)；Second active layer (22) include the second channel (221) and connect respectively with the second channel (221) both ends second
Contact zone (222) and third contact zone (223)；First grid (41) is corresponding to be located above the first channel (211), second grid
(42) corresponding to be located above the second channel (221)；
Step S7, the forming layer on the first active layer (21), first grid (41), the second active layer (22) and second grid (42)
Between insulating layer (50) and patterned, form the first opening (51) being located above the first contact zone (212), connect positioned at second
The 4th opening (54) touching the third opening (53) above area (222) and being located above third contact zone (223)；
Step S8, form the second conductive material layer on interlayer insulating film (50) and patterned, formed first source at interval/
Drain electrode (61), the second source/drain (62) and reflection anode (63)；First source/drain (61) is through the first opening (51) and the
One contact zone (212) contact, second source/drain (62) contacts through third opening (53) with the second contact zone (222), described
Reflection anode (63) is contacted through the 4th opening (54) with third contact zone (223).
7. the production method of double-sided OLED display as claimed in claim 6, which is characterized in that further include：
Step S9, the shape in interlayer insulating film (50), the first source/drain (61), the second source/drain (62) and reflection anode (63)
At passivation layer (70), patterned process is carried out to the passivation layer (70) and interlayer insulating film (50), is formed and is located at transparent anode
(213) the second opening (52) above and the 5th opening (72) above reflection anode (63)；
Step S10, on transparent anode (213) in forming the first luminescent layer (80) in the second opening (52), in reflection anode
(63) in formation the second luminescent layer (100) in the 5th opening (72) on；
Step S11, reflective cathode (90) are formed on passivation layer (70) and the first luminescent layer (80), in passivation layer (70) and second
Transparent cathode (110) are formed on luminescent layer (100).
8. the production method of double-sided OLED display as claimed in claim 7, which is characterized in that first luminescent layer (80)
For red light luminescent layer, green light emitting layer or blue light-emitting；Second luminescent layer (100) is red light luminescent layer, green luminescence
Layer or blue light-emitting；
In the step S10, in formation first in the second opening (52) on transparent anode (213) by the way of inkjet printing
Luminescent layer (80) and on reflection anode (63) in the 5th opening (72) in formed the second luminescent layer (100).
9. the production method of double-sided OLED display as claimed in claim 7, which is characterized in that be additionally provided with after the step S1
Light-shielding material layers are formed on substrate (10) and are patterned, and spaced first light shield layer (121) and the second light shield layer are formed
(122), the step of forming buffer layer (130) for covering the first light shield layer (121) and the second light shield layer (122) later；
In the step S2, semiconductor material layer is formed on the buffer layer (130) and is patterned, formation is located at
The first semiconductor pattern (23) and the second semiconductor pattern (24) above first light shield layer (121) and the second light shield layer (122)；
First semiconductor pattern (23) partially between the first light shield layer (121) and the second light shield layer (122) region top；
After the step S6, the transparent anode (213) is at least partially disposed at the first light shield layer (121) and the second light shield layer
(122) top in region between；
The second opening (52) corresponding transparent anode (213) that the step S9 is formed is located at the first light shield layer (121) and hides with second
The part setting of the top in region between photosphere (122).
10. the production method of double-sided OLED display as claimed in claim 9, which is characterized in that
The material of the substrate (10) is glass；
The material of the light-shielding material layers is Mo；
The buffer layer (130) is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The buffering
Layer (130) with a thickness of
The semiconductor material layer is metal-oxide semiconductor (MOS)；
The insulation material layer (30) is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；It is described
Insulation material layer (30) with a thickness of
The material of first conductive material layer (40) is one of Mo, Al, Cu and Ti or a variety of alloys；Described first
Conductive material layer (40) with a thickness of
The interlayer insulating film (50) is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；It is described
Interlayer insulating film (50) with a thickness of
Second conductive material layer includes the metal layer set gradually from bottom to top and ITO layer, and the material of the metal layer is
One of Al, Ti, Ag or a variety of alloys, second conductive material layer with a thickness of
The passivation layer (70) is the stepped construction of single layer SiOx layers, single layer SiNx layer or SiOx layers and SiNx layer；The passivation
Layer (70) with a thickness of
The material of the reflective cathode (90) is Al；
The material of the transparent cathode (110) is Mg or Ag.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810806786.4A CN108922907A (en) | 2018-07-20 | 2018-07-20 | Double-sided OLED display and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810806786.4A CN108922907A (en) | 2018-07-20 | 2018-07-20 | Double-sided OLED display and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN108922907A true CN108922907A (en) | 2018-11-30 |
Family
ID=64417033
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810806786.4A Withdrawn CN108922907A (en) | 2018-07-20 | 2018-07-20 | Double-sided OLED display and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108922907A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430414A (en) * | 2020-03-31 | 2020-07-17 | 京东方科技集团股份有限公司 | O L ED display panel, preparation method and display device |
| CN113053970A (en) * | 2021-03-10 | 2021-06-29 | Tcl华星光电技术有限公司 | Double-sided display device and preparation method |
| CN113053974A (en) * | 2021-03-11 | 2021-06-29 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050230684A1 (en) * | 2004-03-11 | 2005-10-20 | Chang-Su Seo | Top-emission organic light-emitting display device and method of fabricating the same |
| KR20060040232A (en) * | 2004-11-04 | 2006-05-10 | 삼성에스디아이 주식회사 | Organic light emitting display capable of displaying pictures to a different direction with one panel and fabrication method of the same |
| CN1855526A (en) * | 2005-04-28 | 2006-11-01 | 三星Sdi株式会社 | Organic light emitting display device and method of fabricating the same |
| US20160218124A1 (en) * | 2013-09-27 | 2016-07-28 | Boe Technology Group Co., Ltd. | Thin film transistor driving backplane and manufacturing method thereof, and display panel |
| CN107293555A (en) * | 2017-06-19 | 2017-10-24 | 深圳市华星光电技术有限公司 | The preparation method and its structure of bottom emitting type white light OLED panel |
-
2018
- 2018-07-20 CN CN201810806786.4A patent/CN108922907A/en not_active Withdrawn
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20050230684A1 (en) * | 2004-03-11 | 2005-10-20 | Chang-Su Seo | Top-emission organic light-emitting display device and method of fabricating the same |
| KR20060040232A (en) * | 2004-11-04 | 2006-05-10 | 삼성에스디아이 주식회사 | Organic light emitting display capable of displaying pictures to a different direction with one panel and fabrication method of the same |
| CN1855526A (en) * | 2005-04-28 | 2006-11-01 | 三星Sdi株式会社 | Organic light emitting display device and method of fabricating the same |
| US20160218124A1 (en) * | 2013-09-27 | 2016-07-28 | Boe Technology Group Co., Ltd. | Thin film transistor driving backplane and manufacturing method thereof, and display panel |
| CN107293555A (en) * | 2017-06-19 | 2017-10-24 | 深圳市华星光电技术有限公司 | The preparation method and its structure of bottom emitting type white light OLED panel |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111430414A (en) * | 2020-03-31 | 2020-07-17 | 京东方科技集团股份有限公司 | O L ED display panel, preparation method and display device |
| CN113053970A (en) * | 2021-03-10 | 2021-06-29 | Tcl华星光电技术有限公司 | Double-sided display device and preparation method |
| CN113053974A (en) * | 2021-03-11 | 2021-06-29 | 深圳市华星光电半导体显示技术有限公司 | OLED display panel and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107170762B (en) | OLED display panel and preparation method thereof | |
| CN107808895B (en) | Transparent OLED display and preparation method thereof | |
| CN105261632B (en) | Organic light-emitting display device and its manufacturing method | |
| CN109166896A (en) | Display panel and preparation method thereof | |
| CN103715231B (en) | Organic electroluminescence display panel, display device | |
| CN105810719B (en) | A kind of pixel unit and preparation method thereof, array substrate and display device | |
| TWI529949B (en) | Semiconductor device and method for manufacturing the same | |
| TWI543261B (en) | Semiconductor device and method for manufacturing the same | |
| CN108538890A (en) | A kind of organic light-emitting display device | |
| CN106537567B (en) | Transistor, display device and electronic equipment | |
| CN107611280A (en) | Organic Light Emitting Diode substrate and its manufacture method | |
| CN105097874B (en) | A kind of OLED display device and preparation method thereof, display device | |
| CN107689345A (en) | TFT substrate and preparation method thereof and oled panel and preparation method thereof | |
| CN106653768A (en) | TFT backboard and manufacturing method thereof | |
| CN105355646A (en) | Array substrate and preparation method thereof and display device | |
| WO2015103837A1 (en) | Thin-film transistor and manufacturing method therefor, array substrate and organic light-emitting display panel | |
| TW200536433A (en) | Organic light-emitting diode, display device, and telecommunication employing the same | |
| WO2015043269A1 (en) | Oled pixel structure and oled display apparatus | |
| TW201230339A (en) | Semiconductor device and manufacturing method thereof | |
| CN109119440A (en) | OLED backboard and preparation method thereof | |
| US20170092704A1 (en) | Thin film transistor, method of manufacturing the thin film transistor and thin film transistor, method of manufacturing thin film transistor and flat panel display having the thin film transistor | |
| WO2019080252A1 (en) | Method for manufacturing oled backplane | |
| CN109449188A (en) | Display device, transparent OLED array and preparation method thereof | |
| CN106206672A (en) | AMOLED device and preparation method thereof | |
| CN107910347A (en) | A kind of display device and OLED display panel |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| CB02 | Change of applicant information |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant after: TCL Huaxing Photoelectric Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Applicant before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
|
| CB02 | Change of applicant information | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20181130 |
|
| WW01 | Invention patent application withdrawn after publication |