CN113046828A - Moving device and method for growing substrates of various sizes and flexibly measuring temperature - Google Patents
Moving device and method for growing substrates of various sizes and flexibly measuring temperature Download PDFInfo
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- CN113046828A CN113046828A CN202110251610.9A CN202110251610A CN113046828A CN 113046828 A CN113046828 A CN 113046828A CN 202110251610 A CN202110251610 A CN 202110251610A CN 113046828 A CN113046828 A CN 113046828A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/12—Substrate holders or susceptors
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
- C30B29/403—AIII-nitrides
- C30B29/406—Gallium nitride
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Abstract
The invention discloses a moving device and a method for growing substrates with various sizes and flexibly measuring temperature, wherein the moving device comprises: the substrate placing device comprises a substrate tray and a connecting piece, wherein the substrate tray is provided with a plurality of sizes of substrate placing areas, the connecting piece is connected with a rotary driving unit and is driven to rotate by the rotary driving unit, the rotary driving unit is fixed on a wafer bearing table, the wafer bearing table is connected with a lifting driving unit and is driven to lift by the lifting driving unit, and the lifting driving unit and the rotary driving unit are respectively connected with a controller. Accurate control of the substrate rotational elevation motion is achieved.
Description
Technical Field
The invention relates to the technical field of vapor phase epitaxial deposition, in particular to a moving device and a moving method which are used for growing substrates with various sizes and can flexibly measure the temperature.
Background
The statements in this section merely provide background information related to the present disclosure and may not necessarily constitute prior art.
The third generation wide bandgap semiconductor material represented by GaN has the excellent characteristics of high breakdown field strength, high saturated electron drift rate, strong radiation resistance, good chemical stability and the like, and is obviously applied to the fields of semiconductor illumination, photoelectric detectors, power devices and the like. However, as the demand of high-light efficiency, high-power and high-frequency optoelectronic devices increases, the defect of high heteroepitaxy defect density caused by the lack of a homogeneous substrate is increasingly obvious, and the further improvement of the device performance is seriously restricted. The Hydride Vapor Phase Epitaxy (HVPE) growth technology is the mainstream method for commercially producing GaN single crystal substrates at present due to the advantages of normal pressure growth, high growth speed, easy realization of large-size growth and the like.
At present, a plurality of experts and scholars analyze and research the production mechanism and process parameters of GaN single crystal substrates produced by HVPE, and indicate that the structural design, temperature, flow, pressure, substrate rotating speed and the like of a reaction cavity are key process parameters influencing the quality of the GaN single crystal substrates. S.A.Safvi et al discuss the relationship between the HVPE reaction chamber geometry and GaN growth, and propose that the GaCl concentration near the substrate and the V/III ratio near the substrate are the key to obtain a high-quality GaN film; R.J Molnar et al developed a vertical growth HVPE system, a vertical reaction system that rotated the substrate to obtain a uniform epitaxial layer; zhou' an et al indicate that the rotation of the substrate facilitates the diffusion of GaCl and NH3 gases and formation of laminar flow over the substrate for the purpose of uniform growth of GaN thin films. Therefore, the method has important significance for the high-quality growth of the GaN single crystal substrate and the efficient and stable operation of the HVPE equipment by accurately controlling the rotating speed of the substrate in the vertical HVPEGaN production equipment and realizing the optimal control of the motion control system.
Disclosure of Invention
In order to solve the above problems, the present disclosure provides a motion device and a method for flexibly measuring temperature for growing substrates of various sizes, in which substrate receiving areas of various sizes are disposed on a substrate tray, so as to be capable of growing substrates of various sizes, the lift motion of a wafer stage is controlled by a lift driving unit, and the rotation motion of the wafer stage is controlled by a rotation driving unit, thereby realizing accurate control of the motion of the substrates.
In order to achieve the purpose, the following technical scheme is adopted in the disclosure:
in a first aspect, a mobile device for growing substrates of various sizes and capable of measuring temperature flexibly is provided, which comprises: the substrate placing device comprises a substrate tray and a connecting piece, wherein the substrate tray is provided with a plurality of sizes of substrate placing areas, the connecting piece is connected with a rotary driving unit and is driven to rotate by the rotary driving unit, the rotary driving unit is fixed on a wafer bearing table, the wafer bearing table is connected with a lifting driving unit and is driven to lift by the lifting driving unit, and the lifting driving unit and the rotary driving unit are respectively connected with a controller.
Furthermore, a temperature sensor is arranged on the substrate tray and connected with the controller.
Further, a passage through which a wire passes is provided on the connector and the substrate tray, and the wire passes through the passage to be connected to the temperature sensor.
Furthermore, the rotary driving unit comprises a rotary motor and a speed reducer, the rotary motor is connected with the speed reducer, and an output shaft of the speed reducer is connected with the connecting piece through a coupler.
Furthermore, the lifting driving unit comprises a lifting motor, an output shaft of the lifting motor is connected with a lead screw through a coupler, a sliding table moving up and down along the lead screw is arranged on the lead screw, and the wafer bearing table is connected with the sliding table.
Further, still include two laser rangefinder modules, two laser rangefinder modules are used for measuring the height at wafer bearing platform both ends respectively, and two laser rangefinder modules all are connected with the controller.
Further, the controller measures the heights of two ends of the wafer bearing table in the lifting process through the two laser ranging modules, calculates to obtain the inclination angle of the wafer bearing table, and controls the lifting driving unit to stop moving when the inclination angle of the wafer bearing table exceeds a set threshold value.
Further, the controller controls the lifting driving unit to move, when the wafer bearing table rises to a set height, the lifting driving unit is controlled to stop moving, and the rotary driving unit starts moving.
The lifting drive unit is arranged on the support platform, the support platform is arranged on the support platform, the lifting drive unit is arranged on the support platform, and the controller is used for controlling the lifting drive unit to stop moving when the lifting drive unit detects that the support platform reaches the limit position.
In a second aspect, a flexible thermometric motion method for growing substrates of various sizes is provided, comprising:
placing a substrate to be grown on a substrate tray;
the controller controls the lifting driving unit to move, and the lifting driving unit drives the wafer bearing table to do lifting movement;
the controller controls the rotation driving unit to move, and the rotation driving unit drives the substrate tray to rotate.
Compared with the prior art, the beneficial effect of this disclosure is:
1. the method realizes the control of the lifting and rotating motion of the substrate tray, can control the stability of the substrate tray in the lifting or rotating process, meets the requirements of an HVPE (high voltage vapor phase epitaxy) equipment control system, and realizes the preparation of the high-quality GaN single crystal substrate.
2. This openly rises at the cushion cap in-process, has monitored the inclination of cushion cap through two laser rangefinder modules to guarantee the vertical lift of cushion cap, guaranteed that the substrate tray is when rotatory, the inclination of cushion cap is in the allowed range, avoids the quartz stick to receive transverse stress and fracture and substrate slope to cause the inhomogeneous problem of crystal growth.
3. The substrate placing areas with various sizes are arranged in the substrate tray, so that the simultaneous growth of the substrates with various sizes can be met.
4. The present disclosure provides a temperature sensor in a substrate tray, by which the temperature of a substrate during growth is monitored.
Advantages of additional aspects of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this application, illustrate embodiments of the application and, together with the description, serve to explain the application and are not intended to limit the application.
FIG. 1 is a schematic view of the overall structure of the device disclosed in embodiment 1 of the present disclosure;
FIG. 2 is a schematic view of a substrate tray and connectors of the apparatus disclosed in example 1 of the present disclosure;
FIG. 3 is a schematic view showing the structure of a substrate tray of the apparatus disclosed in example 1 of the present disclosure;
FIG. 4 is a schematic diagram illustrating the calculation of the inclination angle of the wafer stage in embodiment 1 of the present disclosure;
wherein: 1. quartz substrate tray, 2, 6 inches substrate place the district, 3, 4 inches substrate place the district, 4, 2 inches substrate place the district, 5, temperature sensor, 6, tray internal conductor passageway, 7, tweezers are pressed from both sides and are got substrate department, 8, quartz stick internal conductor passageway, 9, quartz stick, 10, rotating electrical machines, 11, elevator motor, 12, support piece platform, 13, speed reducer, 14, slip table, 15, lead screw, 16, laser ranging module.
The specific implementation mode is as follows:
the present disclosure is further described with reference to the following drawings and examples.
It should be noted that the following detailed description is exemplary and is intended to provide further explanation of the disclosure. Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs.
It is noted that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of example embodiments according to the present application. As used herein, the singular forms "a", "an" and "the" are intended to include the plural forms as well, and it should be understood that when the terms "comprises" and/or "comprising" are used in this specification, they specify the presence of stated features, steps, operations, devices, components, and/or combinations thereof, unless the context clearly indicates otherwise.
In the present disclosure, terms such as "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "side", "bottom", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only relational terms determined for convenience in describing structural relationships of the parts or elements of the present disclosure, and do not refer to any parts or elements of the present disclosure, and are not to be construed as limiting the present disclosure.
In the present disclosure, terms such as "fixedly connected", "connected", and the like are to be understood in a broad sense, and mean either a fixed connection or an integrally connected or detachable connection; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present disclosure can be determined on a case-by-case basis by persons skilled in the relevant art or technicians, and are not to be construed as limitations of the present disclosure.
Example 1
In this embodiment, in order to realize the lifting and rotation control of the substrate, a motion device for growing substrates of various sizes and capable of flexibly measuring temperature is disclosed, which realizes the automatic transportation and uniform rotation of the substrate in the HVPE reactor 1, thereby realizing the automatic wafer taking of the HVPE equipment and the high-quality growth of GaN crystals, and comprises: the device comprises a substrate tray, a connecting piece, a rotary driving unit, a wafer bearing table, a lifting driving unit, a laser ranging module, a temperature sensor and a controller, wherein the substrate tray adopts a quartz substrate tray, and the connecting piece adopts a quartz rod.
As shown in FIG. 1, a specific structure of a flexible temperature measurement motion device for growing substrates with various sizes is as follows: the quartz substrate tray 1 is provided with substrate placing areas of various sizes, and simultaneous growth of substrates of different sizes can be realized by providing the substrate placing areas of various sizes.
In specific implementation, the substrate placing areas arranged on the quartz substrate tray 1, as shown in fig. 3, include a 6-inch substrate placing area 2, a 4-inch substrate placing area 3 and a 2-inch substrate placing area 4, and also can be provided with substrate placing areas of other sizes according to actual needs, and each substrate placing area is provided with a notch, and the notch is used for clamping the substrate position 7 by tweezers, so that the substrate position 7 can be conveniently clamped by the tweezers.
The quartz substrate tray 1 is connected with the quartz rod 9, the quartz rod 9 is connected with the rotary driving unit, the rotary driving unit drives the quartz rod 9 to rotate, and then the quartz substrate tray 1 is driven to rotate.
In specific implementation, the rotation driving unit comprises a rotating motor 11 and a speed reducer 13, the rotating motor 11 is connected with the speed reducer 13, an output shaft of the speed reducer 13 is connected with the quartz rod 9 through a coupler, and the rotating motor 11 drives the quartz rod 9 to rotate.
As shown in fig. 2, the temperature sensor 5 is provided on the quartz substrate tray 1, and a passage through which a wire passes is provided on the quartz substrate tray 1 and the quartz rod 9, and the wire passes through the passage to be connected to the temperature sensor 5.
When specifically implementing, temperature sensor 5's quantity is four, four temperature sensor 5 all set up on quartz substrate tray 1, set up quartz rod internal conductor passageway 8 on quartz rod 9, set up tray internal conductor passageway 6 on quartz substrate tray 1, quartz rod internal conductor passageway 8 and tray internal conductor passageway 6 intercommunication, supply the wire to pass the back and be connected with each temperature sensor 5, can detect the temperature of substrate growth through the temperature sensor 5 that sets up, and set up temperature sensor 5 into a plurality ofly, make the temperature detect more accurate, and through the passageway that sets up the wire and pass through, can carry out thermal-insulated protection to the wire, guarantee the effective operation of device.
The rotary driving unit is arranged on the wafer bearing table 12, the wafer bearing table 12 is connected with the lifting driving unit, and the lifting driving unit drives the wafer bearing table 12 to do lifting movement.
In specific implementation, as shown in fig. 1, the lifting drive unit includes two lifting motors 11, screw rods 15 and sliding tables 14, the screw rods 15 are connected to each screw rod 15, the sliding tables 14 move up and down along the screw rods 15, the wafer support table 12 is fixed to the two sliding tables 14, an output shaft of the lifting motor 11 is connected to one of the screw rods 15 through a coupling, the lifting motor 11 rotates to enable the sliding table 14 to drive the wafer support table 12 to perform lifting motion, and the wafer support table drives the rotary drive unit, the quartz rods 9 and the quartz substrate tray thereon to perform lifting motion together.
The moving device for growing substrates with various sizes and flexibly measuring the temperature disclosed by the embodiment is provided with the two laser ranging modules 16, and the lifting height of the wafer bearing table 12 is measured through the two laser ranging modules 16.
In specific implementation, the two laser ranging modules 16 respectively measure the lifting heights of the two ends of the wafer bearing table 12, and the inclination degree of the wafer bearing table 12 is controlled according to the measured lifting heights of the two ends of the wafer bearing table 12.
Wherein, rotation driving unit, lift drive unit, laser rangefinder module, temperature sensor all are connected with the controller.
In specific implementation, Siemens s7-1200 PLC (programmable logic controller) is selected as the controller, the controller is further connected with an upper computer, a control program is written into the PLC, motor motion parameters meeting technological operation requirements are set through a monitoring interface of the upper computer after the PLC operates the program, an instruction is sent to a servo driver of the motor through a PLC output end set in the program, a rotating motor and a lifting motor are driven, stable reaction is guaranteed, and therefore high-quality gallium nitride is prepared.
The motion control is realized by Siemens PLC control, when technological parameters such as temperature, flow, pressure and the like in the HVPE reaction furnace meet the growth requirement of the GaN, the PLC sends out a pulse signal to control the servo driver to drive the lifting motor to move and drive the wafer bearing table to do lifting motion, when the laser ranging module detects that the lifting height of the wafer bearing table reaches a set height, the wafer bearing table sends the quartz bottom sinking tray to a high-temperature reaction area of the HVPE reaction furnace, the lifting driving unit stops moving, the controller controls the rotary driving unit to move, and the quartz rod and the quartz substrate tray are driven to rotate at a constant speed to realize the uniform high-quality growth of the GaN single crystal substrate.
And in the growth process of the substrate, detecting the temperature of a high-temperature reaction zone in the HVPE reaction furnace in real time through a temperature sensor, and monitoring the temperature of the high-temperature reaction zone.
And after the substrate grows, the controller controls the lifting driving unit to move to drive the wafer bearing table to do descending motion, and when the wafer bearing table descends to the required descending height, the lifting driving unit stops moving.
And clamping the substrate by using tweezers, and taking out the grown substrate.
In order to ensure the high-quality growth of the crystal, the closed heat insulation of the reaction furnace needs to be ensured, the lifting motion needs to be vertically operated, and the uneven crystal growth caused by the fracture of the quartz rod due to the transverse stress and the inclination of the substrate is avoided, as shown in fig. 1, the quartz rod is vertically arranged with the wafer bearing table, and the quartz substrate tray is horizontally arranged with the wafer bearing table, so that the inclination angles of the quartz rod and the substrate tray can be obtained by calculating the inclination angle of the wafer bearing table, and the calculation principle of the inclination angle of the wafer bearing table is shown in fig. 3.
Therefore, in order to ensure the vertical lifting of the wafer bearing table, two laser ranging modules are arranged and are respectively used for detecting the lifting heights of the two ends of the wafer bearing table, and the lifting heights of the two ends of the wafer bearing table are assumed to be H1、、H2. By detecting H1、H2The inclination angle of the wafer bearing table is controlled in the lifting process.
For two laser ranging modules, when the two laser ranging modules run, the height measured by the laser ranging modules is returned to the PLC in real time and calculated
Wherein, L is the distance between the two laser ranging modules, and theta is the inclination angle of the wafer bearing platform. When the tan theta is larger than 0.087, namely the theta is larger than the set threshold value by 5 degrees, the controller controls the lifting driving unit to stop moving, and the wafer bearing table is mechanically corrected, so that the inclination angle of the wafer bearing table meets the requirement, and the wafer bearing table can run again.
The inclination angle of the wafer bearing table is monitored by arranging the two laser ranging modules, so that the vertical lifting of the wafer bearing table is effectively guaranteed, and the problems that the quartz rod is inclined and is cracked due to transverse stress and the crystal grows unevenly due to the inclination of the substrate are solved.
In order to realize the limit position protection of the device, a limit protection switch is arranged at the ascending and descending limit positions of the wafer bearing table, and when the wafer bearing table moves to the limit protection switch, the controller controls the lifting motor to stop moving.
The moving device for growing substrates of various sizes and capable of flexibly measuring the temperature is disclosed by the embodiment, wherein the substrate tray is conveyed to the reaction area by the lifting driving unit, the substrate is driven to rotate at a constant speed by the rotating driving unit through the substrate tray, and the substrate tray is ensured to be in a horizontal state, so that the reaction source gas is uniformly distributed on the substrate, and the GaN single crystal substrate meeting the expected high quality is grown.
In the movement process, the inclination angle of the wafer bearing table is monitored by arranging the two laser ranging modules, so that the vertical lifting of the wafer bearing table is effectively guaranteed, and the uniform growth of the substrate is further guaranteed.
The substrate placing areas of various sizes are arranged on the substrate tray, so that the substrates of various sizes can be simultaneously grown. The movement device disclosed by the embodiment has the advantages of strong anti-interference performance, high reliability and better control precision, meets the requirements of an HVPE (high voltage vapor phase epitaxy) equipment control system, and ensures the smooth growth of materials.
Example 2
In this embodiment, a flexible thermometric motion method for growing substrates of various sizes is disclosed, comprising:
placing a substrate to be grown on a substrate tray;
the controller controls the lifting driving unit to move, and the lifting driving unit drives the wafer bearing table to do lifting movement;
the controller controls the rotation driving unit to move, and the rotation driving unit drives the substrate tray to rotate.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
As will be appreciated by one skilled in the art, embodiments of the present application may be provided as a method, system, or computer program product. Accordingly, the present application may take the form of an entirely hardware embodiment, an entirely software embodiment or an embodiment combining software and hardware aspects. Furthermore, the present application may take the form of a computer program product embodied on one or more computer-usable storage media (including, but not limited to, disk storage, CD-ROM, optical storage, and the like) having computer-usable program code embodied therein.
The present application is described with reference to flowchart illustrations and/or block diagrams of methods, apparatus (systems), and computer program products according to embodiments of the application. It will be understood that each flow and/or block of the flow diagrams and/or block diagrams, and combinations of flows and/or blocks in the flow diagrams and/or block diagrams, can be implemented by computer program instructions. These computer program instructions may be provided to a processor of a general purpose computer, special purpose computer, embedded processor, or other programmable data processing apparatus to produce a machine, such that the instructions, which execute via the processor of the computer or other programmable data processing apparatus, create means for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be stored in a computer-readable memory that can direct a computer or other programmable data processing apparatus to function in a particular manner, such that the instructions stored in the computer-readable memory produce an article of manufacture including instruction means which implement the function specified in the flowchart flow or flows and/or block diagram block or blocks.
These computer program instructions may also be loaded onto a computer or other programmable data processing apparatus to cause a series of operational steps to be performed on the computer or other programmable apparatus to produce a computer implemented process such that the instructions which execute on the computer or other programmable apparatus provide steps for implementing the functions specified in the flowchart flow or flows and/or block diagram block or blocks.
Finally, it should be noted that: the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting the same, and although the present invention is described in detail with reference to the above embodiments, those of ordinary skill in the art should understand that: modifications and equivalents may be made to the embodiments of the invention without departing from the spirit and scope of the invention, which is to be covered by the claims.
Claims (10)
1. A flexible temperature measuring motion device for growing substrates of various sizes, comprising: the substrate placing device comprises a substrate tray and a connecting piece, wherein the substrate tray is provided with a plurality of sizes of substrate placing areas, the connecting piece is connected with a rotary driving unit and is driven to rotate by the rotary driving unit, the rotary driving unit is fixed on a wafer bearing table, the wafer bearing table is connected with a lifting driving unit and is driven to lift by the lifting driving unit, and the lifting driving unit and the rotary driving unit are respectively connected with a controller.
2. The mobile device for growing substrates with various sizes and capable of flexibly measuring the temperature as claimed in claim 1, wherein the substrate tray is provided with a temperature sensor, and the temperature sensor is connected with the controller.
3. The mobile device for growing substrates with various sizes and capable of flexibly measuring the temperature as claimed in claim 2, wherein a channel for passing a lead is provided on the connecting member and the substrate tray, and the lead is connected with the temperature sensor through the channel.
4. The exercise device for growing substrates with various sizes and capable of flexibly measuring temperature according to claim 1, wherein the rotary driving unit comprises a rotary motor and a speed reducer, the rotary motor is connected with the speed reducer, and an output shaft of the speed reducer is connected with the connecting piece through a coupler.
5. The device as claimed in claim 1, wherein the elevating driving unit comprises an elevating motor, an output shaft of the elevating motor is connected to a lead screw through a coupling, a slide table is disposed on the lead screw for moving up and down along the lead screw, and the support table is connected to the slide table.
6. The moving device for growing substrates with various sizes and capable of flexibly measuring the temperature as claimed in claim 1, further comprising two laser ranging modules, wherein the two laser ranging modules are respectively used for measuring the heights of two ends of the wafer bearing platform, and both the two laser ranging modules are connected with the controller.
7. The movement device for growing the substrates with various sizes and capable of flexibly measuring the temperature as claimed in claim 6, wherein the controller measures the heights of two ends of the wafer bearing table in the lifting process through two laser ranging modules, calculates to obtain the inclination angle of the wafer bearing table, and controls the lifting driving unit to stop moving when the inclination angle of the wafer bearing table exceeds a set threshold value.
8. The motion device for flexibly measuring the temperature of the substrates grown in various sizes as claimed in claim 1, wherein the controller controls the elevating driving unit to move, and when the wafer stage is raised to a set height, the elevating driving unit is controlled to stop moving, and the rotation driving unit starts moving.
9. The motion device for growing the substrates with various sizes and capable of flexibly measuring the temperature as claimed in claim 1, further comprising a limit protection switch, wherein the limit protection switch is used for detecting the lifting limit position of the wafer bearing table, and when the limit protection switch detects that the wafer bearing table reaches the limit position, the controller controls the lifting driving unit to stop moving.
10. A flexible temperature measurement motion method for growing substrates with various sizes is characterized by comprising the following steps:
placing a substrate to be grown on a substrate tray;
the controller controls the lifting driving unit to move, and the lifting driving unit drives the wafer bearing table to do lifting movement;
the controller controls the rotation driving unit to move, and the rotation driving unit drives the substrate tray to rotate.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN114134562A (en) * | 2021-11-02 | 2022-03-04 | 中国电子科技集团公司第十一研究所 | Tellurium-zinc-cadmium substrate carrier assembly |
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