CN114134562B - Tellurium zinc cadmium substrate carrier assembly - Google Patents
Tellurium zinc cadmium substrate carrier assembly Download PDFInfo
- Publication number
- CN114134562B CN114134562B CN202111289849.1A CN202111289849A CN114134562B CN 114134562 B CN114134562 B CN 114134562B CN 202111289849 A CN202111289849 A CN 202111289849A CN 114134562 B CN114134562 B CN 114134562B
- Authority
- CN
- China
- Prior art keywords
- groove
- cover plate
- cadmium
- zinc
- tellurium
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
The invention discloses a tellurium-zinc-cadmium substrate carrier assembly, which comprises a collet 1 and a cover plate 23; the bottom bracket 1 is provided with a first groove 14, and the shape of the first groove 14 is matched with the shape of the cover plate 23; the collet 1 is also provided with a plurality of second grooves 11 and a third groove 12, the specification of each second groove 11 is matched with the specification of a tellurium-zinc-cadmium substrate 21 to be placed in the second groove, and the specification of the third groove 12 is matched with the specification of a sample wafer 22 to be placed in the third groove; the cover plate 23 is provided with a first through hole 24 at a position corresponding to the third groove 12, the first through hole 24 is used for measuring the temperature of the sample wafer 22, and the cover plate 23 can completely cover the tellurium-zinc-cadmium substrates 21 placed in the second grooves 11. This disclosure sets up the third recess and is used for placing the dailies to can only to dailies temperature measurement when carrying out the temperature measurement can, easy operation, and the apron of this disclosure can cover the cadmium zinc telluride substrate of placing completely, guarantees the reliability of carrier, and is difficult to introduce impurity.
Description
Technical Field
The invention relates to the technical field of infrared focal planes, in particular to a tellurium-zinc-cadmium substrate carrier assembly.
Background
The lattice constant matching of tellurium-zinc-cadmium and tellurium-cadmium-mercury determines that the main process of the current infrared focal plane detector is to grow tellurium-cadmium-mercury film materials on tellurium-zinc-cadmium substrate materials by a liquid phase epitaxy or molecular beam epitaxy method, and then manufacture detector arrays through a device process. The low cost, large area and double polychromatic focal plane are important points of research of the third generation infrared focal plane technology, and the liquid phase epitaxy technology cannot realize multi-layer heteroepitaxy, so that the defects of double polychromatic material epitaxy, poor material uniformity and the like cannot be overcome, and the molecular beam epitaxy technology plays an increasingly important role in the field. Although the limitation of the tellurium-zinc-cadmium substrate is gradually revealed, firstly, a large-area high-quality tellurium-zinc-cadmium substrate is difficult to obtain, secondly, the reliability of interconnection of the detector component is reduced due to the large difference of thermal expansion coefficients of the tellurium-zinc-cadmium substrate and the silicon readout circuit, and thirdly, the high price of the tellurium-zinc-cadmium substrate in unit area is caused due to the fact that the difficulty of crystal growth is large, the period is long and the yield is low due to the physical and chemical characteristics of the tellurium-zinc-cadmium substrate. However, in a plurality of focal plane detectors, the tellurium-zinc-cadmium substrate can be precisely matched with HgCdTe lattice constants of different wavebands, so that the mismatch dislocation between the substrate and an epitaxial layer is reduced; the thermal expansion coefficient of the infrared detector is chemically compatible with that of the HgCdTe epitaxial film, so that the thermal cycling resistance of the infrared detector is high; the infrared transmittance is high, so that the infrared detector can realize backlight illumination, low noise and high quantum efficiency; due to the introduction of Zn, the lattice strength and stacking fault energy are increased, and the dislocation density and the possibility of forming twin crystals are reduced. The tellurium-cadmium-mercury infrared focal plane detector with the best performance is developed by adopting a tellurium-cadmium-mercury film which is formed by epitaxy of a tellurium-zinc-cadmium substrate, and is the most important substrate material accepted by tellurium-cadmium-mercury film materials.
The whole process of growing tellurium-cadmium-mercury comprises a plurality of steps of pretreatment, buffer layer growth, epitaxial growth and the like, wherein the process is accompanied by a plurality of high-temperature treatments, and meanwhile, the temperature uniformity in the growth process of tellurium-cadmium-mercury is extremely high under severe conditions. There is no carrier assembly in the prior art that can meet the needs of material growth.
Disclosure of Invention
The embodiment of the invention provides a tellurium-zinc-cadmium substrate carrier assembly, so that the substrate carrier assembly is simple to operate, convenient to install and pick and not easy to introduce impurities.
The embodiment of the invention provides a tellurium-zinc-cadmium substrate carrier assembly, which comprises a collet 1 and a cover plate 23;
the shoe 1 is provided with a first groove 14, and the shape of the first groove 14 is matched with the shape of the cover plate 23;
the bottom support 1 is further provided with a plurality of second grooves 11 and a third groove 12, the specification of each second groove 11 is matched with the specification of a tellurium-zinc-cadmium substrate 21 to be placed in the corresponding second groove, and the specification of the third groove 12 is matched with the specification of a sample wafer 22 to be placed in the corresponding third groove;
a first through hole 24 is formed in a position, corresponding to the third groove 12, on the cover plate 23, the first through hole 24 is used for measuring the temperature of the sample wafer 22, and the cover plate 23 can completely cover the tellurium-zinc-cadmium substrates 21 placed in the second grooves 11.
In some embodiments, the thickness of the cover plate 23 corresponds to the depth of the first groove 14, so that the cover plate 23 is flush with the outer edge of the shoe 1 after being placed in the first groove 14.
In some embodiments, the shoe 1 further comprises at least one set of protrusions 13 on the outer edge, wherein the protrusions 13 are configured to cooperate with a snap-on corner on a manipulator to secure the shoe 1.
In some embodiments, the shoe 1 is made of a metallic molybdenum material.
In some embodiments, the cover plate 23 is made of a silicon aluminum alloy material.
In some embodiments, the cover plate 23 and the rim of the shoe 1 are provided with chamfers.
In some embodiments, each of the second grooves 11 and the third grooves 12 is rectangular, and four corners of each of the second grooves 11 and the third grooves 12 are provided with chamfers.
In some embodiments, the third recess 12 is provided at the center of the shoe 1.
In some embodiments, the number of the second grooves 11 is 4, and the specifications of the four second grooves 11 are the same.
According to the embodiment of the invention, the plurality of second grooves are arranged for placing the tellurium-zinc-cadmium substrate, and the third grooves are arranged for placing the sample, so that the temperature of the sample can be measured only when the temperature is measured, the operation is simple, the cover plate disclosed by the invention can completely cover the placed tellurium-zinc-cadmium substrate, the reliability of the carrier is ensured, and impurities are not easy to introduce.
The foregoing description is only an overview of the present invention, and is intended to be implemented in accordance with the teachings of the present invention in order that the same may be more clearly understood and to make the same and other objects, features and advantages of the present invention more readily apparent.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic mounting diagram of a cadmium zinc telluride substrate carrier module of the present disclosure;
fig. 2 is a partial enlarged view of a cadmium zinc telluride substrate carrier package of the present disclosure.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
An embodiment of the present invention provides a cadmium zinc telluride substrate carrier package, as shown in fig. 1, comprising a base 1 and a cover plate 23.
The shoe 1 is provided with a first groove 14, and the shape of the first groove 14 is matched with the shape of the cover plate 23. The exemplary first recess 14 may be sized slightly larger than the bottom area of the cover plate 23 so that the cover plate 23 may be fully embedded in the first recess 14.
In this example, the shoe 1 is further provided with a plurality of second grooves 11 and a third groove 12, each second groove 11 is adapted to the specification of the tellurium-zinc-cadmium substrate 21 to be placed therein, and the third groove 12 is adapted to the specification of the sample wafer 22 to be placed therein. The number and size of substrates that the present disclosure can place can be set according to actual needs, and can be varied to fit different substrates.
A first through hole 24 is formed in a position, corresponding to the third groove 12, on the cover plate 23, the first through hole 24 is used for measuring the temperature of the sample wafer 22, and the cover plate 23 can completely cover the tellurium-zinc-cadmium substrates 21 placed in the second grooves 11.
The existing epitaxial carrier uses only one substrate for growth at a time, and the epitaxial growth time of the molecular beam is long, so that a great deal of time is wasted in single-wafer growth. Meanwhile, in order to ensure good temperature control and uniformity per growth, it is necessary to use bandwidth temperature measurement, and if a plurality of substrates are placed on one substrate, it is impossible to measure temperature simultaneously per wafer. Through the design of the cover plate and the third groove 12 of the present disclosure and the specification adaptation of the sample wafer 22 to be placed therein, and through the material design of the matching cover plate, the uniformity of the temperature of the substrate in the whole carrier can be effectively ensured, so that the temperature measurement of all tellurium-zinc-cadmium substrates 21 placed in the second groove 11 is realized only by performing the bandwidth accurate temperature measurement on the matching sample wafer, and the operation flow is greatly simplified. Meanwhile, the cover plate disclosed by the invention can completely cover the placed tellurium-zinc-cadmium substrate, so that the reliability of the carrier is ensured, and impurities are not easy to introduce.
In some embodiments, the thickness of the cover plate 23 corresponds to the depth of the first groove 14, so that the cover plate 23 is flush with the outer edge of the shoe 1 after being placed in the first groove 14. That is, after the cover plate 23 is placed in the first groove 14, the upper surface of the cover plate 23 can be flush with the top surface of the bottom bracket 1, and the cover plate 23 cannot protrude to cause damage to the thermocouple. Through the design, the substrate can be more conveniently installed and transferred, and the repeatability and the reliability of the substrate installation can be improved, so that the substrate cannot move in position or even fall off or slide off in the use process.
In some embodiments, the shoe 1 further comprises at least one set of protrusions 13 on the outer edge, wherein the protrusions 13 are configured to cooperate with a snap-on corner on a manipulator to secure the shoe 1. For example, in fig. 1, 4 (two sets of) protruding parts 13 clamping angles matched and clamped on the manipulator can be arranged at intervals of 90 degrees on the edge of the base 1. And 6 or 8 substrates can be arranged, so that the placement angle of the substrate can be conveniently adjusted.
In some embodiments, the shoe 1 is made of a metallic molybdenum material. In some embodiments, the cover plate 23 is made of a silicon aluminum alloy material. The tellurium-zinc-cadmium substrate carrier assembly disclosed by the disclosure needs to meet the requirement of realizing temperature measurement of all tellurium-zinc-cadmium substrates 21 placed in the second groove 11 only by carrying out bandt accurate temperature measurement on the matched sample wafer, and meanwhile needs to ensure that deformation, corrosion and other conditions cannot occur in a long-time high-temperature environment. The choice of materials for the shoe 1 and the cover plate 23 is therefore critical and cannot be selected or set at will. The inventor selects proper manufacturing materials of all parts through a large number of researches, creatively proposes that the collet uses high-purity metallic molybdenum as a processing material, and the cover plate 23 adopts a silicon-aluminum alloy material, so that the silicon element in the silicon-aluminum alloy of the cover plate 23 can improve the fluidity of the alloy, reduce the hot cracking tendency, have better corrosion resistance and machining performance, have medium strength and hardness, reduce the plasticity, and are particularly suitable for being used as the cover plate while ensuring the high temperature resistance, good heat conduction and corrosion resistance of the carrier. Meanwhile, the silicon-aluminum alloy is adopted as the cover plate, so that the temperature uniformity of the substrate is improved, the material quality of single-time growth of a plurality of tellurium-zinc-cadmium-based tellurium-cadmium-mercury is improved, and the growth efficiency and the yield are greatly improved.
In some embodiments, the cover plate 23 and the rim of the shoe 1 are provided with chamfers. Through the arrangement, the operation is convenient, and the effect that the redundant components possibly damage the substrate is reduced. The cover plate 23 is directly placed in the first groove 14 of the shoe, is perfectly attached to the shoe, and is not convex. The cover plate 23 is not fixed by using screws and the like, so that the substrate is prevented from being damaged when the screws are screwed; the cover plate is closely attached to the back surface of the substrate, and the substrate temperature can be kept consistent while the substrate is fixed.
In some embodiments, as shown in fig. 2, each of the second grooves 11 and the third grooves 12 is rectangular, and four corners of each of the second grooves 11 and the third grooves 12 are provided with chamfers. The second groove 11 is rectangular and can be matched with the substrate, and the circular arc shape of the chamfer at four corners of the groove can facilitate cutting.
In some embodiments, the third recess 12 is provided at the center of the shoe 1. The third groove 12 arranged in the center can be used for measuring the temperature of the band T more conveniently, and meanwhile, the layout of the second groove 11 can be conveniently arranged. The sample used in the present disclosure is square, and other sample having different sizes and different shapes may be used, and the shape of the third groove 12 may be set correspondingly.
In some embodiments, the number of the second grooves 11 is 4, and the specifications of the four second grooves 11 are the same. The arrangement of 4 second grooves 11 can be used for placing 4 tellurium-zinc-cadmium substrates 21, for example, the arrangement is according to 90 degrees, and the stability and the temperature uniformity of the tellurium-zinc-cadmium substrate carrier assembly can be improved.
The carrier for molecular beam epitaxy has the advantages of simple structure, convenient processing, easy operation, good thermal conductivity and temperature uniformity of the embedded cover plate, no need of additional fixation, and reduced damage to the substrate; the adopted sample wafer temperature measurement mode can ensure process repeatability, is easy for real-time monitoring and temperature measurement by a bandwidth T, and improves material quality.
The present disclosure also proposes that an embodiment of a cadmium zinc telluride substrate carrier package include a shoe 1 and a cover plate 23. The collet 1 is of a round structure, and 4 protruding parts 13 matched and clamped on the manipulator are designed at intervals of 90 degrees on the edge. The front surface of the bottom bracket 1 is provided with a first groove 14 for matching and placing a cover plate; four corners of the second groove and the third groove on the bottom support are designed into circular arcs convenient for cutting; a clamping groove for placing a sample wafer and four clamping grooves for placing tellurium-zinc-cadmium substrates are designed on the collet. The cover plate 23 can be directly placed in the first groove 14 on the base, and a square hole with a size corresponding to the base is arranged in the center, so that the temperature measurement of the Bandit is facilitated.
The cover plate 23 is completely embedded into the collet 1, and the thickness is the same as the depth of the reserved clamping groove of the collet, so that the thermocouple cannot be damaged due to protrusion. Through the design, the substrate can be more conveniently installed and transferred, and the repeatability and the reliability of the substrate installation can be improved, so that the substrate cannot move in position or even fall off or slide off in the use process.
All parts of the carrier are made of high temperature resistant, thermally conductive, corrosion resistant materials, in this example the shoe uses high purity metallic molybdenum as the working material. The cover plate material is required to be light in weight, moderate in strength and hardness, and the cover plate is made of silicon-aluminum alloy. The silicon element in the silicon-aluminum alloy can improve the fluidity of the alloy, reduce the hot cracking tendency, have better corrosion resistance and machining performance, have medium strength and hardness, reduce the plasticity and are particularly suitable for being used as a cover plate.
The size of the whole base and the cover plate can be adjusted according to actual needs, and specific structures are not limited one by one.
In this example, the four substrates are 20mm×25mm in size, and the tellurium-zinc-cadmium substrate carrier assembly of the present disclosure is used as follows:
step 1: placing the carrier subjected to standard cleaning into an equipment sample injection chamber for degassing for two hours at 180 ℃;
step 2: cooling to room temperature, transferring into a growth chamber of the equipment, degassing again for one hour at 900 ℃, cooling, and transferring back to a sample injection chamber of the equipment
Step 3: taking out the cleaned substrate from the MOS-II grade absolute ethyl alcohol by using tweezers processed by polytetrafluoroethylene materials, airing in an ultra-clean environment or drying by using a nitrogen gun, and then placing the substrate in a substrate box;
step 4: placing the substrate and the sample wafer in a manual box connected with an equipment sample injection chamber;
step 5: in a glove box, firstly, taking down a cover plate on a carrier and placing the cover plate aside for standby, sequentially placing tellurium-zinc-cadmium materials in a sample box and a substrate box on a collet in an equipment sample injection chamber by using a vacuum suction pen with a rubber head, and lightly covering the cover plate to ensure that the cover plate is completely embedded into the collet;
step 6: after confirming that the error is not found, transferring the carrier to a sample injection chamber of the equipment to be grown;
step 7: in the growth process, using Bandi T to measure temperature;
step 8: after the growth is completed, the substrate and the sample are taken out, and the sample is subjected to standard cleaning again before the next use.
According to the design of the present disclosure, after the high-purity molybdenum and the silicon aluminum alloy are adopted as the processing materials, the alloy has the ultra-high physical and chemical stability, and simultaneously has the good mechanical strength and the excellent thermal conductivity; the carrier of this disclosure still has characteristics such as easy installation and picking, and the temperature of multichip substrate can once only be gathered accurately to sample wafer and the through-hole that the carrier of this disclosure still is convenient for Bandit temperature measurement simultaneously.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The foregoing embodiment numbers of the present invention are merely for the purpose of description, and do not represent the advantages or disadvantages of the embodiments.
The embodiments of the present invention have been described above with reference to the accompanying drawings, but the present invention is not limited to the above-described embodiments, which are merely illustrative and not restrictive, and many forms may be made by those having ordinary skill in the art without departing from the spirit of the present invention and the scope of the claims, which are to be protected by the present invention.
Claims (6)
1. A tellurium-zinc-cadmium substrate carrier assembly, which is characterized by comprising a collet (1) and a cover plate (23);
the bottom support (1) is provided with a first groove (14), and the shape of the first groove (14) is matched with the shape of the cover plate (23);
the bottom support (1) is also provided with a plurality of second grooves (11) and a third groove (12), the specification of each second groove (11) is matched with the specification of a tellurium-zinc-cadmium substrate (21) to be placed in the second groove, and the specification of the third groove (12) is matched with the specification of a sample wafer (22) to be placed in the third groove;
a first through hole (24) is formed in the cover plate (23) at a position corresponding to the third groove (12), the first through hole (24) is used for measuring the temperature of the sample wafer (22), and the cover plate (23) can completely cover the tellurium-zinc-cadmium substrates (21) placed in the second grooves (11);
each second groove (11) and each third groove (12) are rectangular, and four corners of each second groove (11) and each third groove (12) are provided with chamfers;
the third groove (12) is arranged at the center of the bottom bracket (1);
the thickness of the cover plate (23) corresponds to the depth of the first groove (14) so as to enable the cover plate (23) to be flush with the outer edge of the collet (1) after being placed into the first groove (14).
2. The tellurium-zinc-cadmium substrate carrier assembly according to claim 1, wherein the shoe (1) further comprises at least one set of protrusions (13) on an outer edge thereof, wherein the protrusions (13) are configured to cooperate with a snap-on corner on a manipulator to fix the shoe (1).
3. The tellurium-zinc-cadmium substrate carrier assembly as claimed in claim 1, wherein the shoe (1) is made of a metallic molybdenum material.
4. Tellurium-zinc-cadmium substrate carrier assembly according to claim 1, characterized in that the cover plate (23) is made of silicon-aluminum alloy material.
5. Cadmium zinc telluride substrate carrier package according to claim 1, characterized in that the cover plate (23) and the shoe (1) edges are provided with chamfers.
6. Cadmium zinc telluride substrate carrier package according to claim 1, characterized in that the number of said second grooves (11) is 4 and that the specifications of four of said second grooves (11) are identical.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111289849.1A CN114134562B (en) | 2021-11-02 | 2021-11-02 | Tellurium zinc cadmium substrate carrier assembly |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111289849.1A CN114134562B (en) | 2021-11-02 | 2021-11-02 | Tellurium zinc cadmium substrate carrier assembly |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN114134562A CN114134562A (en) | 2022-03-04 |
| CN114134562B true CN114134562B (en) | 2023-08-15 |
Family
ID=80392097
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202111289849.1A Active CN114134562B (en) | 2021-11-02 | 2021-11-02 | Tellurium zinc cadmium substrate carrier assembly |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN114134562B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177038A (en) * | 1992-12-09 | 1994-06-24 | Nec Corp | Formation method for mercury cadmium tellurium thin film based on molecular beam and substrate holder thereof |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN104451605A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Graphite pallet for MOCVD equipment |
| CN204676191U (en) * | 2015-05-29 | 2015-09-30 | 山东浪潮华光光电子股份有限公司 | A kind ofly be applicable to each size substrate extension and promote the graphite pallet of epitaxial wafer homogeneity |
| CN113046828A (en) * | 2021-03-08 | 2021-06-29 | 山东大学 | Moving device and method for growing substrates of various sizes and flexibly measuring temperature |
-
2021
- 2021-11-02 CN CN202111289849.1A patent/CN114134562B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177038A (en) * | 1992-12-09 | 1994-06-24 | Nec Corp | Formation method for mercury cadmium tellurium thin film based on molecular beam and substrate holder thereof |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN104451605A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Graphite pallet for MOCVD equipment |
| CN204676191U (en) * | 2015-05-29 | 2015-09-30 | 山东浪潮华光光电子股份有限公司 | A kind ofly be applicable to each size substrate extension and promote the graphite pallet of epitaxial wafer homogeneity |
| CN113046828A (en) * | 2021-03-08 | 2021-06-29 | 山东大学 | Moving device and method for growing substrates of various sizes and flexibly measuring temperature |
Also Published As
| Publication number | Publication date |
|---|---|
| CN114134562A (en) | 2022-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Akiyama et al. | Growth of GaAs on Si by MOVCD | |
| US20070096117A1 (en) | Nitride Semiconductor Wafer | |
| US20080217745A1 (en) | Nitride Semiconductor Wafer | |
| US7804019B2 (en) | Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices | |
| US20060033160A1 (en) | Conductive layer for biaxially oriented semiconductor film growth | |
| KR101110592B1 (en) | Manufacture of cadmium mercury telluride | |
| US20080315255A1 (en) | Thermal Expansion Transition Buffer Layer for Gallium Nitride on Silicon | |
| KR20130098438A (en) | Gallium nitride material and method for producing same | |
| Wee et al. | Heteroepitaxial film silicon solar cell grown on Ni-W foils | |
| KR101590496B1 (en) | Film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device | |
| Sakurai et al. | In situ diagnostic methods for thin‐film fabrication: utilization of heat radiation and light scattering | |
| WO2021121024A1 (en) | Tray used for thin-film deposition device | |
| Li et al. | Material and technology developments of the totally sputtering-made p/n GaN diodes for cost-effective power electronics | |
| CN114134562B (en) | Tellurium zinc cadmium substrate carrier assembly | |
| Dutta et al. | Large grained single-crystalline-like germanium thin film on flexible Ni–W tape | |
| CN101250752B (en) | Group iii nitride semiconductor substrate | |
| CN1369904A (en) | Heteroepitavy technology for growing silicon carbide film on sapphire substrate | |
| Kohiki et al. | Characterization of molecular beam deposited CuInSe2 thin films | |
| Nakamura et al. | Resistive heater element made of highly durable TaC-coated graphite for high-temperature and highly corrosive processes: application to MOCVD GaN epitaxial growth | |
| Zhou et al. | Low temperature growth of single-crystalline cubic SiC on Si (111) by solid source molecular beam epitaxy | |
| US10096472B2 (en) | Single crystal rhombohedral epitaxy of SiGe on sapphire at 450° C.-500° C. substrate temperatures | |
| Kusaka et al. | Effect of substrate temperature on crystal orientation and residual stress in radio frequency sputtered gallium–nitride films | |
| Bernede et al. | Grain boundary conductivity in different polycrystalline MoSe2 thin films | |
| Wagner et al. | Fabrication and testing of thermoelectric thin film devices | |
| Nosho et al. | Lateral uniformity in HgCdTe layers grown by molecular beam epitaxy |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |