CN114134562A - Tellurium-zinc-cadmium substrate carrier assembly - Google Patents
Tellurium-zinc-cadmium substrate carrier assembly Download PDFInfo
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- CN114134562A CN114134562A CN202111289849.1A CN202111289849A CN114134562A CN 114134562 A CN114134562 A CN 114134562A CN 202111289849 A CN202111289849 A CN 202111289849A CN 114134562 A CN114134562 A CN 114134562A
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
- C30B23/02—Epitaxial-layer growth
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
- H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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Abstract
The invention discloses a tellurium-zinc-cadmium substrate carrier assembly, which comprises a bottom support 1 and a cover plate 23; the bottom support 1 is provided with a first groove 14, and the shape of the first groove 14 is matched with that of the cover plate 23; the bottom support 1 is also provided with a plurality of second grooves 11 and a third groove 12, the specification of each second groove 11 is matched with that of a cadmium zinc telluride substrate 21 to be placed in the second groove, and the specification of each third groove 12 is matched with that of a sample wafer 22 to be placed in the third groove; the cover plate 23 is provided with a first through hole 24 at a position corresponding to the third groove 12, the first through hole 24 is used for measuring the temperature of the sample wafer 22, and the cover plate 23 can completely cover the cadmium zinc telluride substrate 21 placed in each second groove 11. This openly sets up the third recess and is used for placing the sample wafer to can only to the sample wafer temperature measurement when carrying out the temperature measurement can, easy operation, and the apron of this disclosure can cover the tellurium zinc cadmium substrate of placing completely, guarantees the reliability of carrier, and is difficult to introduce impurity.
Description
Technical Field
The invention relates to the technical field of infrared focal planes, in particular to a tellurium-zinc-cadmium substrate carrier assembly.
Background
The matching of lattice constants of tellurium-zinc-cadmium and tellurium-cadmium-mercury determines that the current mainstream process of the infrared focal plane detector is to grow a tellurium-cadmium-mercury thin film material on a tellurium-zinc-cadmium substrate material by a liquid phase epitaxy or molecular beam epitaxy method and then manufacture a detector array by a device process. The low-cost, large-area and double-multicolor focal plane is the key point of the research of the third-generation infrared focal plane technology, and the liquid phase epitaxy technology cannot realize multilayer heteroepitaxy, further cannot realize double-multicolor material epitaxy, has poor material uniformity and other insurmountable defects, so that the molecular beam epitaxy technology plays an increasingly important role in the field. Although the limitations of the cadmium zinc telluride substrate gradually appear, firstly, a large-area high-quality cadmium zinc telluride substrate is difficult to obtain, secondly, the interconnection reliability of the detector assembly is reduced due to the larger difference of thermal expansion coefficients of the cadmium zinc telluride substrate and the silicon readout circuit, and thirdly, due to the physical and chemical characteristics of the cadmium zinc telluride, the crystal growth difficulty is large, the period is long, the yield is low, and the expensive price of the cadmium zinc telluride substrate in unit area is caused. However, in a plurality of focal plane detectors, the tellurium-zinc-cadmium substrate can be accurately matched with the HgCdTe lattice constants of different wave bands, so that the mismatch dislocation between the substrate and an epitaxial layer is reduced; the film has chemical compatibility and approximate thermal expansion coefficient with the HgCdTe epitaxial film, so that the infrared detector has strong thermal cycle resistance; the infrared detector has high infrared transmittance, and can realize back illumination, low noise and high quantum efficiency; due to the introduction of Zn, the lattice strength and the stacking fault energy are increased, and the dislocation density and the possibility of twin crystal formation are reduced. The mercury cadmium telluride infrared focal plane detector with the best performance is developed by adopting a mercury cadmium telluride film extended from a cadmium zinc telluride substrate, and is the most important substrate material recognized by mercury cadmium telluride film materials.
The whole process of growing the mercury cadmium telluride comprises a plurality of steps of pretreatment, buffer layer growth, epitaxial growth and the like, and the process is accompanied with a plurality of times of high-temperature treatment, and simultaneously, the growth process of the mercury cadmium telluride has extremely high requirements on temperature uniformity and other harsh conditions. However, there is no carrier assembly that meets the growth requirements of the material.
Disclosure of Invention
The embodiment of the invention provides a cadmium zinc telluride substrate carrier assembly, and provides the substrate carrier assembly which is simple to operate, convenient to mount and pick and not easy to introduce impurities.
The embodiment of the invention provides a tellurium-zinc-cadmium substrate carrier assembly, which comprises a bottom support 1 and a cover plate 23;
a first groove 14 is formed in the bottom support 1, and the shape of the first groove 14 is matched with that of the cover plate 23;
the bottom support 1 is also provided with a plurality of second grooves 11 and a third groove 12, the specification of each second groove 11 is matched with that of a cadmium zinc telluride substrate 21 to be placed in the second groove, and the specification of each third groove 12 is matched with that of a sample wafer 22 to be placed in the third groove;
the cover plate 23 is provided with a first through hole 24 at a position corresponding to the third groove 12, the first through hole 24 is used for measuring the temperature of the sample wafer 22, and the cover plate 23 can completely cover the cadmium zinc telluride substrate 21 placed in each second groove 11.
In some embodiments, the thickness of the cover plate 23 corresponds to the depth of the first recess 14, so as to achieve that the cover plate 23 is flush with the outer edge of the shoe 1 after being placed in the first recess 14.
In some embodiments, the shoe 1 further has at least one set of protrusions 13 on its outer edge, said protrusions 13 being adapted to cooperate with a detent on the manipulator to secure the shoe 1.
In some embodiments, the shoe 1 is made of a metal molybdenum material.
In some embodiments, the cover plate 23 is made of a silicon aluminum alloy material.
In some embodiments, the cover plate 23 and the edge of the shoe 1 are both provided with chamfers.
In some embodiments, each of the second grooves 11 and the third grooves 12 is rectangular, and four corners of each of the second grooves 11 and the third grooves 12 are provided with chamfers.
In some embodiments, said third recess 12 is provided at the centre of said shoe 1.
In some embodiments, the number of the second grooves 11 is 4, and the four second grooves 11 have the same size.
According to the embodiment of the invention, the plurality of second grooves are used for placing the cadmium zinc telluride substrate, and the third grooves are used for placing the sample wafer, so that only the sample wafer can be subjected to temperature measurement during temperature measurement, the operation is simple, the cover plate disclosed by the invention can completely cover the placed cadmium zinc telluride substrate, the reliability of the carrier is ensured, and impurities are not easy to introduce.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
FIG. 1 is a schematic view of the installation of a CdZnTe substrate carrier assembly of the present disclosure;
fig. 2 is a close-up view of a cadmium zinc telluride substrate carrier assembly of the present disclosure.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
An embodiment of the present invention provides a cadmium zinc telluride substrate carrier assembly, as shown in fig. 1, including a bottom support 1 and a cover plate 23.
The shoe 1 is provided with a first groove 14, and the shape of the first groove 14 is matched with that of the cover plate 23. The exemplary first groove 14 may be sized slightly larger than the bottom area of the cover plate 23 so that the cover plate 23 may be completely embedded in the first groove 14.
In this example, the base support 1 is further provided with a plurality of second grooves 11 and a third groove 12, each of the second grooves 11 is adapted to the specification of the cadmium zinc telluride substrate 21 to be placed therein, and the third groove 12 is adapted to the specification of the sample wafer 22 to be placed therein. The number and the size of the substrates which can be placed in the method can be set according to actual needs, and the number and the size can be changed to be suitable for different substrates.
The cover plate 23 is provided with a first through hole 24 at a position corresponding to the third groove 12, the first through hole 24 is used for measuring the temperature of the sample wafer 22, and the cover plate 23 can completely cover the cadmium zinc telluride substrate 21 placed in each second groove 11.
The existing epitaxial carrier only can grow one substrate at a time, and because the molecular beam epitaxial growth time is long, a large amount of time is wasted in single-chip growth. Meanwhile, in order to ensure that the temperature control and uniformity of each growth are good, BandiT temperature measurement needs to be used, and if a plurality of substrates are placed on one substrate, the temperature measurement of each substrate cannot be carried out simultaneously. Through the design that the cover plate and the third groove 12 are matched with the specification of the sample wafer 22 to be placed in the carrier, and through the material design of the matched cover plate, the uniformity of the temperature of the substrate in the whole carrier can be effectively guaranteed, so that the temperature of all cadmium zinc telluride substrates 21 placed in the second groove 11 can be measured only by carrying out BandiT accurate temperature measurement on the matched sample wafer, and the operation flow is greatly simplified. Meanwhile, the cover plate can completely cover the placed tellurium-zinc-cadmium substrate, the reliability of the carrier is guaranteed, and impurities are not easy to introduce.
In some embodiments, the thickness of the cover plate 23 corresponds to the depth of the first recess 14, so as to achieve that the cover plate 23 is flush with the outer edge of the shoe 1 after being placed in the first recess 14. That is, after the cover plate 23 is placed in the first groove 14, the upper surface of the cover plate 23 can be flush with the top surface of the bottom support 1, and the cover plate 23 does not protrude to cause a thermal couple. The design can make the installation and the transfer of the substrate more convenient, and simultaneously can improve the repeatability and the reliability of the installation of the substrate, so that the substrate can not move or even fall off or slide off in the using process.
In some embodiments, the shoe 1 further has at least one set of protrusions 13 on its outer edge, said protrusions 13 being adapted to cooperate with a detent on the manipulator to secure the shoe 1. For example, in fig. 1, 4 (two sets of) projections 13 can be provided on the edge of the mounting 1 at 90 ° to engage with the manipulator. It is also possible to provide 6 or 8 so that it is also possible to achieve convenient adjustment of the placement angle of the substrate.
In some embodiments, the shoe 1 is made of a metal molybdenum material. In some embodiments, the cover plate 23 is made of a silicon aluminum alloy material. The tellurium-zinc-cadmium substrate carrier assembly disclosed by the invention needs to meet the requirement that the temperature measurement of all tellurium-zinc-cadmium substrates 21 placed into the second groove 11 is realized only by carrying out BandiT accurate temperature measurement on a matching sample wafer, and meanwhile, the conditions of deformation, corrosion and the like in a long-time high-temperature environment are not caused. The choice of material for the mounting 1 and the cover plate 23 is therefore very critical and cannot be chosen or set at will. The inventor selects suitable manufacturing materials of all parts through a great deal of research, creatively proposes that the bottom support uses high-purity metal molybdenum as a processing material, and the cover plate 23 uses a silicon-aluminum alloy material, so that the carrier is guaranteed to have high temperature resistance, good heat conduction and corrosion resistance, and simultaneously, silicon element in the silicon-aluminum alloy of the cover plate 23 can improve the fluidity of the alloy and reduce the hot cracking tendency, and the cover plate has good corrosion resistance and machining performance, has medium strength and hardness, reduces the plasticity and is particularly suitable for being used as a cover plate. Meanwhile, the silicon-aluminum alloy is adopted as the cover plate, the temperature uniformity of the substrate is improved, the material quality of a plurality of pieces of tellurium-zinc-cadmium-based tellurium-cadmium-mercury grown in a single time is improved, and the growth efficiency and the yield are greatly improved.
In some embodiments, the cover plate 23 and the edge of the shoe 1 are both provided with chamfers. The arrangement has the advantages of convenient operation and reduction of the damage to the substrate caused by redundant parts. The cover plate 23 is directly placed in the first groove 14 of the shoe, perfectly fitting the shoe, without being raised. The cover plate 23 does not need to be fixed without screws and the like, and the substrate is prevented from being damaged when the screws are screwed down; the cover plate is tightly attached to the back surface of the substrate, so that the temperature of the substrate can be kept consistent while the substrate is fixed.
In some embodiments, as shown in fig. 2, each of the second grooves 11 and the third grooves 12 is rectangular, and four corners of each of the second grooves 11 and the third grooves 12 are provided with chamfers. The second groove 11 is rectangular and can be matched with the substrate, and simultaneously, the chamfer arcs at the four corners of the groove can facilitate cutting.
In some embodiments, said third recess 12 is provided at the centre of said shoe 1. Through setting up the third recess 12 of department in the center can be convenient for BandiT more carry out the temperature measurement, can also play the overall arrangement of the second recess 11 of being convenient for simultaneously, kill two birds with one stone. The sample wafer used in the present disclosure is square, and other sample wafers with different sizes and shapes can be used, and the shape of the third groove 12 is correspondingly set.
In some embodiments, the number of the second grooves 11 is 4, and the four second grooves 11 have the same size. The 4 second grooves 11 are arranged to accommodate 4 cadmium zinc telluride substrates 21, for example, arranged at 90 °, which can improve the stability and temperature uniformity of the cadmium zinc telluride substrate carrier assembly.
The carrier for molecular beam epitaxy has the advantages of simple structure, convenience in processing and easiness in operation, the cover plate which is embedded and placed has good heat conductivity and temperature uniformity, and the damage to the substrate is reduced without additional use and fixation; the adopted sample wafer temperature measurement mode can ensure the process repeatability, is easy for BandIT to monitor and measure the temperature in real time and improves the material quality.
The present disclosure also provides that the embodiment of the tellurium-zinc-cadmium substrate carrier assembly comprises a bottom support 1 and a cover plate 23. The bottom support 1 is of a circular structure, and 4 protruding parts 13 matched with each other and clamped on the manipulator are arranged at the edge of the bottom support at intervals of 90 degrees. The front surface of the bottom support 1 is provided with a first groove 14 for matching with a cover plate; the four corners of the second groove and the third groove on the bottom support are designed into arc shapes convenient for cutting; the bottom support is provided with a clamping groove for placing a sample wafer and four clamping grooves for placing a tellurium-zinc-cadmium substrate. The cover plate 23 can be directly placed in the first groove 14 on the bottom support, and a square hole with the size corresponding to that of the bottom support is formed in the center of the cover plate, so that the BandiT can conveniently measure the temperature.
The cover plate 23 is completely embedded into the bottom support 1, the thickness of the cover plate is the same as the depth of a reserved clamping groove of the bottom support, and the cover plate cannot protrude to cause a thermal couple to be damaged by collision. The design can make the installation and the transfer of the substrate more convenient, and simultaneously can improve the repeatability and the reliability of the installation of the substrate, so that the substrate can not move or even fall off or slide off in the using process.
All parts of the carrier are made of a high temperature resistant, heat conductive, corrosion resistant material, in this example the base uses high purity molybdenum metal as the processing material. The cover plate material is required to be light in weight and moderate in strength and hardness, and the cover plate is made of silicon-aluminum alloy. The silicon element in the silicon-aluminum alloy can improve the fluidity of the alloy, reduce the hot cracking tendency, has better corrosion resistance and machining performance, has medium strength and hardness, reduces the plasticity, and is particularly suitable for being used as a cover plate.
The size of the whole bottom support and the cover plate can be adjusted according to actual needs, and the specific structure is not limited one by one.
In this example, the four substrate dimensions are 20mm × 25mm, and the steps of using the cdte substrate carrier assembly of the present disclosure are as follows:
step 1: placing the carrier subjected to standard cleaning into an equipment sample chamber, and degassing for two hours at 180 ℃;
step 2: transferring the mixture into a growth cavity of the equipment after the temperature is reduced to room temperature, degassing the mixture for one hour again at 900 ℃, transferring the mixture back to a sampling chamber of the equipment after the temperature is reduced
And step 3: taking out the cleaned substrate from the MOS-II grade absolute ethyl alcohol by using tweezers made of polytetrafluoroethylene materials, airing the substrate in an ultra-clean environment or blow-drying the substrate by using a nitrogen gun and then placing the substrate in a substrate box;
and 4, step 4: placing the substrate and the sample wafer in a manual box connected with a sample chamber of the equipment;
and 5: in the glove box, the cover plate on the carrier is taken down and placed aside for standby, the tellurium-zinc-cadmium materials in the sample box and the substrate box are sequentially placed on a bottom support in the sample chamber of the equipment by using a vacuum suction pen with a rubber head and are lightly covered by the cover plate, so that the cover plate is completely embedded into the bottom support;
step 6: after confirming that no errors exist, transferring the carrier to an equipment sample chamber for growing;
and 7: in the growth process, measuring the temperature by using BandiT;
and 8: after the growth is finished, the substrate and the sample wafer are taken out, and the sample wafer needs to be subjected to standard cleaning again before being used next time.
According to the design of the method, after high-purity molybdenum and silicon-aluminum alloy are adopted as processing materials, the high-purity molybdenum and silicon-aluminum alloy has ultrahigh physical and chemical stability and simultaneously has better mechanical strength and excellent thermal conductivity; the carrier also has the characteristics of easiness in installation and picking and the like, and meanwhile, the carrier also has sample wafers and through holes which are convenient for BandiT temperature measurement, and the temperature of a plurality of substrates can be accurately collected at one time.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above-mentioned serial numbers of the embodiments of the present invention are merely for description and do not represent the merits of the embodiments.
While the present invention has been described with reference to the embodiments shown in the drawings, the present invention is not limited to the embodiments, which are illustrative and not restrictive, and it will be apparent to those skilled in the art that various changes and modifications can be made therein without departing from the spirit and scope of the invention as defined in the appended claims.
Claims (9)
1. The tellurium-zinc-cadmium substrate carrier assembly is characterized by comprising a bottom support (1) and a cover plate (23);
a first groove (14) is formed in the bottom support (1), and the shape of the first groove (14) is matched with that of the cover plate (23);
the bottom support (1) is also provided with a plurality of second grooves (11) and a third groove (12), the specifications of the second grooves (11) are matched with the specification of a cadmium zinc telluride substrate (21) to be placed in the second grooves, and the specifications of the third grooves (12) are matched with the specification of a sample wafer (22) to be placed in the third grooves;
and a first through hole (24) is formed in the cover plate (23) at a position corresponding to the third groove (12), the first through hole (24) is used for measuring the temperature of the sample wafer (22), and the cover plate (23) can completely cover the tellurium-zinc-cadmium substrates (21) placed in the second grooves (11).
2. A cadmium zinc telluride substrate carrier assembly as claimed in claim 1 wherein the thickness of the cover plate (23) corresponds to the depth of the first recess (14) to achieve that the cover plate (23) is flush with the outer edge of the shoe (1) after being placed in the first recess (14).
3. A substrate carrier assembly according to claim 1, wherein the mounting (1) has at least one set of protrusions (13) on its outer edge, said protrusions (13) being adapted to cooperate with detents on a manipulator for securing the mounting (1).
4. A cadmium zinc telluride substrate carrier assembly as claimed in claim 1 wherein said base support (1) is formed from a metal molybdenum material.
5. The cadmium zinc telluride substrate carrier assembly as defined in claim 1 wherein said cover plate (23) is formed from a silicon aluminum alloy material.
6. A cadmium zinc telluride substrate carrier assembly as claimed in claim 1 wherein the cover plate (23) and the shoe (1) are chamfered at their edges.
7. A substrate carrier assembly according to claim 1, wherein each of the second recess (11) and the third recess (12) is rectangular, and four corners of each of the second recess (11) and the third recess (12) are chamfered.
8. A cadmium zinc telluride substrate carrier assembly as claimed in claim 1 wherein said third recess (12) is provided at the centre of said shoe (1).
9. The cadmium zinc telluride substrate carrier assembly according to claim 1 wherein the number of said second grooves (11) is 4 and the four said second grooves (11) are of the same size.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111289849.1A CN114134562B (en) | 2021-11-02 | 2021-11-02 | Tellurium zinc cadmium substrate carrier assembly |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202111289849.1A CN114134562B (en) | 2021-11-02 | 2021-11-02 | Tellurium zinc cadmium substrate carrier assembly |
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| CN114134562A true CN114134562A (en) | 2022-03-04 |
| CN114134562B CN114134562B (en) | 2023-08-15 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177038A (en) * | 1992-12-09 | 1994-06-24 | Nec Corp | Formation method for mercury cadmium tellurium thin film based on molecular beam and substrate holder thereof |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN104451605A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Graphite pallet for MOCVD equipment |
| CN204676191U (en) * | 2015-05-29 | 2015-09-30 | 山东浪潮华光光电子股份有限公司 | A kind ofly be applicable to each size substrate extension and promote the graphite pallet of epitaxial wafer homogeneity |
| CN113046828A (en) * | 2021-03-08 | 2021-06-29 | 山东大学 | Moving device and method for growing substrates of various sizes and flexibly measuring temperature |
-
2021
- 2021-11-02 CN CN202111289849.1A patent/CN114134562B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06177038A (en) * | 1992-12-09 | 1994-06-24 | Nec Corp | Formation method for mercury cadmium tellurium thin film based on molecular beam and substrate holder thereof |
| CN101621022A (en) * | 2008-07-04 | 2010-01-06 | 广镓光电股份有限公司 | Combined type chip carrying disk and epitaxy machine platform thereof |
| CN104451605A (en) * | 2014-12-24 | 2015-03-25 | 中国科学院半导体研究所 | Graphite pallet for MOCVD equipment |
| CN204676191U (en) * | 2015-05-29 | 2015-09-30 | 山东浪潮华光光电子股份有限公司 | A kind ofly be applicable to each size substrate extension and promote the graphite pallet of epitaxial wafer homogeneity |
| CN113046828A (en) * | 2021-03-08 | 2021-06-29 | 山东大学 | Moving device and method for growing substrates of various sizes and flexibly measuring temperature |
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| CN114134562B (en) | 2023-08-15 |
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