CN113046593B - Copper micro-alloy, copper micro-alloy wire and preparation method thereof - Google Patents

Copper micro-alloy, copper micro-alloy wire and preparation method thereof Download PDF

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CN113046593B
CN113046593B CN202110328798.2A CN202110328798A CN113046593B CN 113046593 B CN113046593 B CN 113046593B CN 202110328798 A CN202110328798 A CN 202110328798A CN 113046593 B CN113046593 B CN 113046593B
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copper
alloy material
microalloy
prepared
master alloy
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CN113046593A (en
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周博轩
周振基
洪飞义
郭骅德
于锋波
彭政展
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Niche Tech Kaiser Shantou Ltd
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    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C9/00—Alloys based on copper
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21C—MANUFACTURE OF METAL SHEETS, WIRE, RODS, TUBES OR PROFILES, OTHERWISE THAN BY ROLLING; AUXILIARY OPERATIONS USED IN CONNECTION WITH METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL
    • B21C1/00—Manufacture of metal sheets, metal wire, metal rods, metal tubes by drawing
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • C22C1/03—Making non-ferrous alloys by melting using master alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H01B1/026—Alloys based on copper
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B13/00—Apparatus or processes specially adapted for manufacturing conductors or cables

Abstract

A copper microalloy comprising, by weight: 0.5 to 0.7 percent of palladium, 0.3 to 0.5 percent of gold, 0.1 to 0.3 percent of silver, 0.05 to 0.2 percent of platinum, 0.05 to 0.1 percent of phosphorus, 0.05 to 0.1 percent of silicon and the balance of copper. In the copper microalloy, phosphorus is phosphated copper (Cu)3P2) In the form of copper silicide (Cu)5Si) is present. The invention also provides a copper microalloy wire which is prepared by adopting the copper microalloy through a wire drawing process. The invention also provides a preparation method of the copper micro-alloy and the copper micro-alloy wire. The copper microalloy wire of the invention has good conductivity, high corrosion resistance (more corrosion resistance than pure copper wire), excellent mechanical strength and electrical fatigue property. The copper micro-alloy wire has a tensile strength of 5 to 7gf and an energizing fatigue life of more than 300 times.

Description

Copper microalloy, copper microalloy wire and preparation method thereof
Technical Field
The invention relates to an alloy material, in particular to a copper micro-alloy, a lead (which can be used for IC and LED packaging) made of the copper micro-alloy, and a preparation method of the copper micro-alloy and the copper micro-alloy lead.
Background
Copper wire is the main material for preparing the wire because it is excellent and cheap in conductivity, but because it is easily oxidized and easily corroded, the conductive efficacy is affected. In order to reduce the oxidation of copper wires, a coating is coated on the outer surface of the copper wires to reduce the oxidation and corrosion rate of the copper wires.
For example, chinese patent No. CN 103745963B discloses a copper-based lead and a semiconductor package structure carrying the same, which is formed by coating a copper wire as a core material with a coating layer made of any one or more of gold, palladium or platinum by electrolytic gold plating, electroless gold plating or vapor deposition, and finally performing plasma etching treatment on the outer surface of the copper-based lead to improve the surface finish thereof. For another example, chinese patent No. CN 108122877B discloses a thin gold copper alloy wire and a method for manufacturing the same, in which a palladium pre-plating layer and a gold coating layer are sequentially coated on the copper wire core. However, the copper wire has poor resistance to electro-thermal fatigue due to the difference in thermal expansion because of the difference in the material of the inner and outer layers; moreover, because of different materials, the potential difference corrosion is more likely to occur in a corrosive environment, and the application reliability is greatly reduced.
Disclosure of Invention
The technical problem to be solved by the invention is to provide a copper micro-alloy wire and a preparation method thereof, wherein the copper micro-alloy wire has the characteristics of corrosion resistance, excellent mechanical strength and excellent electric fatigue characteristics. The technical scheme is as follows:
A copper microalloy characterized by containing, by weight: 0.5 to 0.7 percent of palladium, 0.3 to 0.5 percent of gold, 0.1 to 0.3 percent of silver, 0.05 to 0.2 percent of platinum, 0.05 to 0.1 percent of phosphorus, 0.05 to 0.1 percent of silicon and the balance of copper.
Preferably, in the copper microalloy, phosphorus is copper phosphide (Cu)3P2) In the form of copper silicide (Cu)5Si) is present.
The copper microalloy wire is characterized by being prepared from the copper microalloy through a wire drawing process.
The invention also provides a preparation method of the copper microalloy, which is characterized by comprising the following steps:
(1) the following raw materials are prepared: copper, palladium, gold, silver, platinum, phosphor-copper master alloy material and copper-silicon master alloy material;
all raw materials generally contain the following elements in weight proportions: 0.5-0.7% of palladium, 0.3-0.5% of gold, 0.1-0.3% of silver, 0.05-0.2% of platinum, 0.05-0.1% of phosphorus, 0.05-0.1% of silicon and the balance of copper;
(2) smelting the copper, palladium, gold, silver and platinum prepared in the step (1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material;
(3) adding the phosphorus-copper master alloy material prepared in the step (1) into the homogenized copper alloy material, and homogenizing at 1000-1300 ℃ for 10-60 minutes to obtain a first intermediate product;
(4) And (2) adding the copper-silicon master alloy material prepared in the step (1) into the first intermediate product, and carrying out homogenization treatment at 1100-1300 ℃ for 10-60 minutes to obtain the copper microalloy.
The first intermediate product obtained in step (3) contains copper phosphide, and the copper microalloy obtained in step (4) contains copper silicide and copper phosphide.
In the step (1), the phosphorus element is from a phosphor-copper master alloy material, the silicon is from a copper-silicon master alloy material, and the copper element is from copper, a phosphor-copper master alloy material, a copper-silicon master alloy material and other raw materials.
Preferably, in the step (1), the provided phosphor-copper master alloy material is a homogenized phosphor-copper master alloy material, and the provided copper-silicon master alloy material is a homogenized copper-silicon master alloy material.
Preferably, the phosphorus copper master alloy material provided in step (1) contains 4-6wt.% phosphorus and 94-96wt.% copper. More preferably, the phosphorus-copper master alloy material provided in step (1) contains 5wt.% phosphorus and 95wt.% copper.
Preferably, the copper silicon master alloy material provided in step (1) contains 1-3 wt.% silicon and 97-99 wt.% copper. More preferably, the copper-silicon master alloy material provided in step (1) contains 2 wt.% silicon and 98wt.% copper.
In the preferable step (2), the copper alloy material is heated to 1100 to 1500 ℃ (preferably 1250 ℃) and is subjected to homogenization treatment. More preferably, in the step (2), the time for homogenizing the copper alloy material is 1 to 12 hours.
In a preferable embodiment, the phosphor-copper master alloy material is added to the homogenized copper alloy material in the step (3), and then the mixture is homogenized at 1200 ℃ for 30 minutes.
In a preferable scheme, after the copper-silicon master alloy material is added into the first intermediate product in the step (4), homogenization treatment is carried out for 30 minutes at 1200 ℃.
The invention also provides a preparation method of the copper microalloy wire, which is characterized by comprising the following steps:
(1') preparation of a copper microalloy
(1' -1) preparing the following raw materials: copper, palladium, gold, silver, platinum, phosphor-copper master alloy material and copper-silicon master alloy material;
all raw materials generally contain the following elements in weight proportions: 0.5-0.7% of palladium, 0.3-0.5% of gold, 0.1-0.3% of silver, 0.05-0.2% of platinum, 0.05-0.1% of phosphorus, 0.05-0.1% of silicon and the balance of copper;
(1 '-2) smelting the copper, palladium, gold, silver and platinum prepared in the step (1' -1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material;
(1 '-3) adding the phosphor-copper master alloy material prepared in the step (1' -1) into the homogenized copper alloy material, and homogenizing at 1000-1300 ℃ for 10-60 minutes to obtain a first intermediate product;
(1 '-4) adding the copper-silicon master alloy material prepared in the step (1' -1) into the first intermediate product, and carrying out homogenization treatment at 1100-1300 ℃ for 10-60 minutes to obtain a copper microalloy;
(2') drawing
And (3) forming the copper micro-alloy obtained in the step (1') into a copper micro-alloy wire through a wire drawing process.
The method for preparing the copper microalloy in the step (1') is the same as the method for preparing the copper microalloy.
In a preferred embodiment, the step (2') of drawing comprises the following steps:
(2 '-1) subjecting the copper micro-alloy obtained in the step (1') to a directional continuous casting process to obtain a wire rod with the diameter of 6-8 mm;
(2' -2) drawing: drawing the wire rod obtained in the step (2' -1) to obtain a copper micro-alloy wire with the diameter of 50-280 mu m;
(2' -3) intermediate annealing: after the step (2' -2) of wire drawing is finished, intermediate annealing is carried out on the copper micro-alloy wire, and N is adopted in the annealing process2Or nitrogenThe hydrogen mixed gas is used as an annealing atmosphere, the effective length of the annealing furnace is 600-1000mm, the annealing temperature is 300-600 ℃, and the annealing speed is 60-120 m/min;
(2 '-4) continuously drawing the copper micro-alloy wire subjected to the intermediate annealing treatment in the step (2' -3) to obtain the copper micro-alloy wire with the diameter of 15-40 mu m;
(2' -5) Final annealing: carrying out final annealing on the copper micro-alloy wire obtained in the step (2' -4), wherein N is adopted in the annealing process2Or the nitrogen-hydrogen mixed gas is used as the annealing atmosphere, the effective length of the annealing furnace is 600-1000mm, the annealing temperature is 300-600 ℃, and the annealing speed is 60-120 m/min;
(2' -6) Cooling: and finally, after the annealing is finished, cooling the copper micro-alloy wire to 20-30 ℃ to obtain the required copper micro-alloy wire.
Preferably, the nitrogen-hydrogen mixture used in the above steps (2 '-3) and (2' -5) is composed of 5 vol% of H2And 95% by volume of N2And (4) forming.
According to the copper microalloy wire, phosphorus and silicon are successfully added into a copper microalloy material, the addition of phosphorus can improve the corrosion resistance and acid and alkali resistance of the copper microalloy material and the copper microalloy wire, and the addition of silicon can improve the tensile strength of the copper microalloy material and the copper microalloy wire so as to avoid the prepared copper microalloy wire from being easily broken; the palladium element in the copper microalloy material and the copper microalloy wire can inhibit the growth of interface IMC (intermetallic compound), the gold element can improve the oxidation resistance of the copper microalloy wire, the silver element can improve the fatigue resistance of the copper microalloy wire, and the platinum element can increase the stability of a sphere and a sphere diameter.
The copper microalloy wire of the invention does not have an outer plating layer, thereby overcoming the defects of poor thermal fatigue resistance caused by different thermal expansion because of different inner and outer layer materials, potential difference corrosion caused by different inner and outer layer materials and poor electrifying fatigue life caused by interface joule heat generated by different inner and outer layer materials of the traditional palladium-plated copper wire.
In short, the copper microalloyed wire of the invention has good electrical conductivity, high corrosion resistance (more corrosion resistance than pure copper wire), and excellent mechanical strength and electrical fatigue characteristics. The copper microalloy wire has the tensile strength of 5-7 gf, and the energizing fatigue life of more than 300 times.
Detailed Description
Example 1
The copper microalloy in this example contains by weight: 0.7% of palladium, 0.5% of gold, 0.3% of silver, 0.2% of platinum, 0.05% of phosphorus, 0.05% of silicon and the balance of copper. In the copper microalloy, phosphorus is phosphated copper (Cu)3P2) In the form of copper silicide (Cu)5Si) is present.
The preparation method of the copper microalloy comprises the following steps:
(1) the following raw materials are prepared: copper, palladium, gold, silver, platinum, phosphor-copper master alloy material (provided phosphor-copper master alloy material is homogenized phosphor-copper master alloy material containing 5wt.% of phosphorus and 95wt.% of copper) and copper-silicon master alloy material (provided copper-silicon master alloy material is homogenized copper-silicon master alloy material containing 2 wt.% of silicon and 98wt.% of copper);
all raw materials generally contain the following elements in weight proportions: 0.7% of palladium, 0.5% of gold, 0.3% of silver, 0.2% of platinum, 0.05% of phosphorus, 0.05% of silicon and the balance of copper;
The copper element accounts for 98.2 percent of the total weight of the raw materials, wherein 94.8 percent of the copper element is from a copper raw material (the prepared copper raw material accounts for 94.8 percent of the total weight of the raw materials), 0.95 percent of the copper-phosphorus master alloy material (the prepared copper-phosphorus master alloy material accounts for 1 percent of the total weight of the raw materials), and 2.45 percent of the copper-silicon master alloy material (the prepared copper-silicon master alloy material accounts for 2.5 percent of the total weight of the raw materials);
(2) smelting the copper, palladium, gold, silver and platinum prepared in the step (1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material (heating the copper alloy material to 1250 ℃, and carrying out homogenization treatment for 3 hours);
(3) adding the phosphorus-copper master alloy material prepared in the step (1) into the homogenized copper alloy material, and homogenizing at 1200 ℃ for 30 minutes to obtain a first intermediate product;
(4) and (2) adding the copper-silicon master alloy material prepared in the step (1) into the first intermediate product, and homogenizing at 1200 ℃ for 30 minutes to obtain the copper microalloy.
And forming the obtained copper microalloy into a copper microalloy wire by a wire drawing process.
The wire drawing process comprises the following steps:
(1') carrying out directional continuous casting on the obtained copper microalloy to obtain a wire rod with the diameter of 8 millimeters;
(2') wire drawing: drawing the wire obtained in the step (1') to obtain a copper micro-alloy wire with the diameter of 150 mu m;
(3') intermediate annealing: after the step (2') of drawing wire, carrying out intermediate annealing on the copper micro-alloy wire, wherein N is adopted in the annealing process2The effective length of the annealing furnace is 800mm, the annealing temperature is 500 ℃, and the annealing speed is 80 m/min;
(4 ') continuously drawing the copper micro-alloy wire subjected to the intermediate annealing treatment in the step (3') to obtain a copper micro-alloy wire with the diameter of 18 mu m;
(5') Final annealing: carrying out final annealing on the copper micro-alloy wire obtained in the step (4'), wherein N is adopted in the annealing process2The effective length of the annealing furnace is 1000mm, the annealing temperature is 400 ℃, and the annealing speed is 80 m/min;
(6') Cooling: and finally, after the annealing is finished, cooling the copper micro-alloy wire to 25 ℃ to obtain the required copper micro-alloy wire.
Comparative example 1
Commercially available palladium plated copper wire.
Comparative example 2
In this comparative example, a copper alloy material was prepared as follows:
(1) the following raw materials are prepared by weight: 0.7% of palladium, 0.5% of gold, 0.3% of silver, 0.2% of platinum and the balance of copper;
(2) smelting the copper, palladium, gold, silver and platinum prepared in the step (1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material (heating the copper alloy material to 1250 ℃, and carrying out homogenization treatment for 3 hours);
And (3) forming the copper alloy material obtained in the step (2) into a copper alloy wire by a wire drawing process (specifically, the wire drawing process refers to example 1).
Comparative example 3
In this comparative example, a first intermediate product (the first intermediate product being a copper micro-alloy containing copper, palladium, gold, silver, platinum, phosphorus) was prepared as follows:
(1) the following raw materials are prepared: copper, palladium, gold, silver, platinum, phosphor-copper master alloy material (provided phosphor-copper master alloy material is homogenized phosphor-copper master alloy material containing 5wt.% of phosphor and 95wt.% of copper);
all raw materials generally contain the following elements in weight proportions: 0.7% of palladium, 0.5% of gold, 0.3% of silver, 0.2% of platinum, 0.05% of phosphorus and the balance of copper;
(2) smelting the copper, palladium, gold, silver and platinum prepared in the step (1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material (heating the copper alloy material to 1250 ℃, and carrying out homogenization treatment for 3 hours);
(3) adding the phosphorus-copper master alloy material prepared in the step (1) into the homogenized copper alloy material, and homogenizing at 1200 ℃ for 30 minutes to obtain a first intermediate product.
The first intermediate product obtained in the above step (3) is formed into a first wire (the first wire is a copper micro-alloy wire containing copper, palladium, gold, silver, platinum, and phosphorus) by a wire drawing process (specifically, the wire drawing process refers to example 1).
Examples of the experiments
Commercially available palladium-plated copper wires (comparative example 1), copper alloy wires prepared in comparative example 2, first wires prepared in comparative example 3, and copper micro-alloy wires prepared in example 1 were each tested for fusing current, resistance, tensile strength (measured several times, and the numerical ranges thereof were counted), sulfur resistance, thermal fatigue resistance, sodium chloride immersion corrosion resistance, and energization fatigue life. Each of the wires used had a diameter of 18 μm.
The measuring method comprises the following steps:
the sulfur resistance was measured by baking the test object in sulfur vapor at 120 ℃ for 1 hour, and observing the change in color on the surface of the line after baking. If yellowing or blackening is evident, the vulcanization resistance is poor; if no significant discoloration is observed, the vulcanization resistance is excellent.
The thermal fatigue resistance is measured by heating the object to be tested to 175 deg.C, cooling to room temperature, repeating the heating-cooling process at least 500 times to repeatedly fatigue the object, and measuring the linear material of the object to be tested. If the linear material is unchanged, the specimen has excellent thermal fatigue resistance. If the wire rod is rapidly fused after being electrified, it shows poor thermal fatigue resistance.
The corrosion resistance of sodium chloride immersion is measured by immersing the object to be measured in 25 deg.C saturated salt solution for 0-2 hours, and measuring the elongation rate every 30 minutes during the immersion process. If the elongation remains unchanged after soaking, it indicates excellent sodium chloride immersion corrosion resistance. If the elongation rate continues to decrease after soaking, the sodium chloride immersion corrosion resistance is poor.
The measurement of the fatigue life is to electrify the object to be tested with 80% of its fusing current and repeatedly electrify it in the cycle of "electrifying for 60 seconds and powering off for 5 seconds" to calculate the fatigue fusing life, i.e. its energizing fatigue life.
The measurement results are shown in table one.
Watch 1
Figure 445991DEST_PATH_IMAGE002
According to the experimental result of the table one, the heat fatigue resistance and the sodium chloride immersion corrosion resistance of the palladium-plated copper wire sold in the market are poor, and the electrification fatigue life is the lowest of four groups; the copper micro-alloy wire prepared by the invention has good sulfur resistance, thermal fatigue resistance and sodium chloride immersion corrosion resistance, the tensile strength and the electrification fatigue resistance of the copper micro-alloy wire are also four groups of the highest, and the copper micro-alloy wire has good conductivity and corrosion resistance.

Claims (9)

1. A copper microalloy characterized by containing, by weight: 0.5-0.7% of palladium, 0.3-0.5% of gold, 0.1-0.3% of silver, 0.05-0.2% of platinum, 0.05-0.1% of phosphorus, 0.05-0.1% of silicon and the balance of copper;
the preparation method of the copper microalloy comprises the following steps:
(1) the following raw materials are prepared: copper, palladium, gold, silver, platinum, phosphor-copper master alloy material and copper-silicon master alloy material;
all raw materials generally contain the following elements in weight proportions: 0.5-0.7% of palladium, 0.3-0.5% of gold, 0.1-0.3% of silver, 0.05-0.2% of platinum, 0.05-0.1% of phosphorus, 0.05-0.1% of silicon and the balance of copper;
(2) Smelting the copper, palladium, gold, silver and platinum prepared in the step (1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material;
in the step (2), the copper alloy material is heated to 1100-1500 ℃ for homogenization treatment; the homogenization treatment time of the copper alloy material is 1-12 hours;
(3) adding the phosphorus-copper master alloy material prepared in the step (1) into the homogenized copper alloy material, and homogenizing at 1000-1300 ℃ for 10-60 minutes to obtain a first intermediate product;
(4) and (3) adding the copper-silicon master alloy material prepared in the step (1) into the first intermediate product, and carrying out homogenization treatment at 1100-1300 ℃ for 10-60 minutes to obtain the copper microalloy.
2. The copper microalloy of claim 1, wherein: in the copper microalloy, phosphorus is present in the form of copper phosphide and silicon is present in the form of copper silicide.
3. A copper micro-alloy wire characterized by being produced by a wire drawing process using the copper micro-alloy of claim 1 or 2.
4. A method of making a copper microalloy as recited in claim 1, including the steps of:
(1) the following raw materials are prepared: copper, palladium, gold, silver, platinum, phosphor-copper master alloy material and copper-silicon master alloy material;
All raw materials generally contain the following elements in weight proportions: 0.5-0.7% of palladium, 0.3-0.5% of gold, 0.1-0.3% of silver, 0.05-0.2% of platinum, 0.05-0.1% of phosphorus, 0.05-0.1% of silicon and the balance of copper;
(2) smelting the copper, palladium, gold, silver and platinum prepared in the step (1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material;
in the step (2), the copper alloy material is heated to 1100-1500 ℃ for homogenization treatment; the homogenization treatment time of the copper alloy material is 1-12 hours;
(3) adding the phosphorus-copper master alloy material prepared in the step (1) into the homogenized copper alloy material, and homogenizing at 1000-1300 ℃ for 10-60 minutes to obtain a first intermediate product;
(4) and (3) adding the copper-silicon master alloy material prepared in the step (1) into the first intermediate product, and carrying out homogenization treatment at 1100-1300 ℃ for 10-60 minutes to obtain the copper microalloy.
5. The method for producing a copper microalloy according to claim 4, wherein: in the step (1), the prepared phosphor-copper master alloy material is a homogenized phosphor-copper master alloy material, and the prepared copper-silicon master alloy material is a homogenized copper-silicon master alloy material.
6. The method for producing a copper microalloy according to claim 4 or 5, wherein: the phosphorus-copper master alloy material prepared in the step (1) contains 4-6wt.% of phosphorus and 94-96wt.% of copper.
7. The method for producing a copper microalloy according to claim 4 or 5, wherein: the copper-silicon master alloy material prepared in the step (1) contains 1-3 wt.% of silicon and 97-99 wt.% of copper.
8. The method for producing a copper microalloy according to claim 4, wherein: adding a phosphorus-copper master alloy material into the homogenized copper alloy material in the step (3), and then carrying out homogenization treatment at 1200 ℃ for 30 minutes; and (4) adding a copper-silicon master alloy material into the first intermediate product in the step (4), and then carrying out homogenization treatment at 1200 ℃ for 30 minutes.
9. A preparation method of a copper micro-alloy wire is characterized by comprising the following steps:
(1') preparation of copper microalloy
(1' -1) preparing the following raw materials: copper, palladium, gold, silver, platinum, phosphor-copper master alloy material and copper-silicon master alloy material;
all raw materials generally contain the following elements in weight proportions: 0.5-0.7% of palladium, 0.3-0.5% of gold, 0.1-0.3% of silver, 0.05-0.2% of platinum, 0.05-0.1% of phosphorus, 0.05-0.1% of silicon and the balance of copper;
(1 '-2) smelting the copper, palladium, gold, silver and platinum prepared in the step (1' -1) into a copper alloy material, and carrying out homogenization treatment on the copper alloy material;
in the step (1' -2), the copper alloy material is heated to 1100-1500 ℃ for homogenization treatment; the time for carrying out homogenization treatment on the copper alloy material is 1-12 hours;
(1 '-3) adding the phosphor-copper master alloy material prepared in the step (1' -1) into the homogenized copper alloy material, and homogenizing at 1000-1300 ℃ for 10-60 minutes to obtain a first intermediate product;
(1 '-4) adding the copper-silicon master alloy material prepared in the step (1' -1) into the first intermediate product, and homogenizing at 1100-1300 ℃ for 10-60 minutes to obtain a copper microalloy;
(2') drawing
And (3) forming the copper micro-alloy obtained in the step (1') into a copper micro-alloy wire through a wire drawing process.
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