CN113035996B - High-efficiency battery based on nano silicon slurry containing high-concentration boron and manufacturing method - Google Patents
High-efficiency battery based on nano silicon slurry containing high-concentration boron and manufacturing method Download PDFInfo
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- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 105
- 229910052796 boron Inorganic materials 0.000 title claims abstract description 105
- 239000005543 nano-size silicon particle Substances 0.000 title claims abstract description 59
- 239000002002 slurry Substances 0.000 title claims abstract description 59
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 122
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 122
- 239000010703 silicon Substances 0.000 claims abstract description 122
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims abstract description 61
- 229910052698 phosphorus Inorganic materials 0.000 claims abstract description 61
- 239000011574 phosphorus Substances 0.000 claims abstract description 61
- 238000000034 method Methods 0.000 claims abstract description 51
- 238000002161 passivation Methods 0.000 claims abstract description 47
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 43
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 42
- 238000007639 printing Methods 0.000 claims abstract description 41
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 39
- 239000004332 silver Substances 0.000 claims abstract description 39
- 229910052709 silver Inorganic materials 0.000 claims abstract description 39
- 238000005245 sintering Methods 0.000 claims abstract description 28
- 238000009792 diffusion process Methods 0.000 claims abstract description 27
- 238000000151 deposition Methods 0.000 claims abstract description 12
- RLOWWWKZYUNIDI-UHFFFAOYSA-N phosphinic chloride Chemical compound ClP=O RLOWWWKZYUNIDI-UHFFFAOYSA-N 0.000 claims abstract description 11
- 239000011521 glass Substances 0.000 claims abstract description 10
- 238000005530 etching Methods 0.000 claims abstract description 8
- 238000004140 cleaning Methods 0.000 claims abstract description 7
- 238000001035 drying Methods 0.000 claims description 17
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 7
- CFOAUMXQOCBWNJ-UHFFFAOYSA-N [B].[Si] Chemical compound [B].[Si] CFOAUMXQOCBWNJ-UHFFFAOYSA-N 0.000 claims description 6
- 230000003667 anti-reflective effect Effects 0.000 claims description 2
- 230000006872 improvement Effects 0.000 abstract description 15
- HIVGXUNKSAJJDN-UHFFFAOYSA-N [Si].[P] Chemical compound [Si].[P] HIVGXUNKSAJJDN-UHFFFAOYSA-N 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 82
- 238000006243 chemical reaction Methods 0.000 description 16
- 230000000694 effects Effects 0.000 description 12
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- 238000005516 engineering process Methods 0.000 description 8
- 238000012360 testing method Methods 0.000 description 7
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl trichloride Chemical compound ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
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- 229910019213 POCl3 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- FGUJWQZQKHUJMW-UHFFFAOYSA-N [AlH3].[B] Chemical compound [AlH3].[B] FGUJWQZQKHUJMW-UHFFFAOYSA-N 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
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- 239000003960 organic solvent Substances 0.000 description 1
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- 239000005360 phosphosilicate glass Substances 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
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Abstract
The invention discloses a method for manufacturing a high-efficiency battery based on nano silicon slurry containing high-concentration boron, which comprises the following steps: s1, taking a silicon wafer, cleaning and texturing, setting an SE (selective emitter) area on the front surface of the silicon wafer, and printing phosphorus-containing nano silicon slurry in the SE area; s2 in POCl 3 Performing phosphorus diffusion in the atmosphere to form a phosphorus-doped region in the SE region, thereby obtaining phosphorus-silicon glass; s3, removing the phosphorosilicate glass, carrying out back etching, depositing an antireflection film on the front side of the silicon wafer, and depositing a passivation film on the back side of the silicon wafer; s4, printing high-concentration boron nano silicon slurry on the passivation film on the back of the silicon wafer, and scanning by using laser to realize localized boron doping; s5, printing aluminum paste on the back of the silicon wafer, and printing silver paste on the SE structure on the front of the silicon wafer; and S6, sintering to form the battery. The invention also discloses a high-efficiency battery manufactured by the method. According to the invention, the sintering temperature is reduced by forming the SE structure and carrying out local localized boron doping, so that the improvement of the battery efficiency is effectively realized.
Description
Technical Field
The invention belongs to the technical field of solar cells, and particularly relates to a high-efficiency cell based on high-concentration boron-containing nano silicon slurry and a manufacturing method thereof.
Background
The crystalline silicon solar cell is the mainstream of the current photovoltaic market due to the high conversion efficiency and long service life. At present, the commercial quantity production of the crystalline silicon solar cell is mainly based on a p-type cell. Compared with the p-type conventional battery, the p-type PERC (Passivated Emitter and reactor Contact) battery has the following advantages: and (1) internal back reflection is enhanced, and optical loss of long waves is reduced. (2) The high quality of the back passivation greatly improves the open circuit voltage (Voc) and short circuit current (Isc) of the PERC battery, so that the conversion efficiency is higher, and the highest conversion efficiency can approach or exceed 22%. Moreover, since the compatibility between the process for manufacturing the PERC cell (as shown in a in fig. 3) and the process for manufacturing the P-type conventional cell is high, the introduction of the process for manufacturing the P-type conventional cell into the PERC cell technology is low in cost and efficient, and the production capacity of the PERC cell is expected to completely replace the existing P-type conventional cell in the coming years.
However, the average efficiency of the PERC battery production is actually achieved by more than 22% by the conventional PERC process and technology reserve, and a plurality of advanced technologies need to be superimposed, which not only increases the cost and difficulty of battery manufacturing, but also requires significant addition and modification of equipment and processes on the existing production line, and these solutions cannot meet the application requirements of the industry exceeding the PERC battery.
Currently, a method for improving performance of a PERC cell includes printing a boron-containing doped silicon nanoparticle slurry on a passivation film on a back surface of the PERC cell, and upgrading the PERC structure to a PERL (Passivated Emitter Rear Localized) structure, where the method includes: printing boron-containing nano silicon slurry on a passivation film on the back surface of the battery according to a designed pattern (the main stream is Al) 2 O3 and SiN x Laminated constructions of (a); performing successive scanning on the borosilicate slurry coating film pattern after the preliminary drying by using a suitable laser (the disclosure data shows that the borosilicate slurry coating film pattern is 532nm, and the borosilicate slurry coating film pattern is pulsed but not limited to this type), opening a passivation film (a contact channel between a back electrode and a substrate silicon wafer) positioned below the coating film by using an instant high-temperature thermal effect generated by the laser, and doping boron contained in the slurry into a predetermined region on the back surface of the silicon wafer (i.e. the laser simultaneously performs two functions of opening the passivation film and partially doping boron); finally, aluminum paste is printed on the entire back surface of the battery, and the aluminum paste and the silver paste on the front surface of the battery are sintered together, so that a modified PERC (like PERL) high-efficiency battery with the partially doped boron region is formed. The BSF (Back Surface field) formed by the local al paste thermal diffusion with the local high-concentration laser doping and boron instead of the local al paste thermal diffusion can significantly improve Voc (open circuit voltage) and FF (fill factor), thereby improving the conversion efficiency of the cell. However, the methodThe method at least has the following defects, which causes the unstable battery efficiency improving effect and the low cost performance of mass production introduction: (1) According to a manufacturing process of a conventional PERC cell, after laser is partially doped with boron, aluminum paste needs to be printed on the back surface of the cell completely, and then the aluminum paste and the front silver paste are sintered at the same time to form front and back electrodes in good contact with a silicon wafer, wherein the sintering temperature of conventional silver paste is generally required to be above 850 ℃ for achieving good contact with the silicon wafer, the forming temperature of aluminum-silicon alloy is only 577 ℃, and the diffusion temperature of boron is at least above 1000 ℃, in view of manufacturing cost and productivity, high-temperature sintering in which front silver paste is only used in a mass production mode (that is, the sintering temperature is about 850), such a high-temperature sintering process can cause an over-excited reaction between aluminum and silicon in the back aluminum paste, and aluminum entering the silicon wafer from below the electrode can greatly surpass a B-BSF boron back field formed by laser doping (the depth of the laser-doped boron can only reach about 5um, and the aluminum can enter the silicon wafer more than 10um under a high-temperature condition), thereby the efficiency of damaging or offsetting the laser-doped boron. (2) The boron content in the boron nano silicon slurry is limited by the synthesis mode of the silicon nanoparticles, the molar ratio of boron to silicon is less than or equal to 0.02, and the efficiency improvement effect due to laser doping with boron is difficult to ensure under the condition that interference is caused by overexcitation of aluminum and silicon at high temperature.
In addition, there is also a method of improving the performance of the PERC cell, i.e., SE-PERC technology (where SE is a Selective Emitter), as shown in b of fig. 3, by using the front POCl of the PERC cell 3 In the PSG (phosphosilicate glass) formed after the phosphorus oxychloride diffusion is doped with the laser irradiation under appropriate conditions to form the patterned phosphorus-heavily doped region (SE), the improvement in the cell efficiency of the method, which is more than 0.15% on average compared to the standard PERC, can be stably obtained. The SE structure can greatly reduce the impedance between the silver electrode and the silicon wafer, so that the silver paste on the front side of the battery can be well contacted with the silicon wafer under the low-temperature sintering condition. In addition, from the perspective of achieving good contact between the front silver electrode and the silicon wafer, the SE structure with the higher phosphorus-doping concentration is more favorable for achieving good contact between the front silver paste and the silicon wafer at a lower temperature. However, in the SE-PERC technique, POCl is utilized 3 After spreadingThe phosphorus diffusion concentration realized by the formed PSG is limited, the sintering temperature is difficult to be greatly reduced, the B-BSF formed by the over-excited reaction between aluminum and silicon cannot be effectively prevented, and the efficiency of the battery is effectively improved; and too high phosphorus concentration can cause loss of incident light of a window part which is exposed to sunlight and outside the SE structure, so that the improvement effect of the conversion efficiency of the cell is not obvious. In addition, in order to achieve a higher phosphorus doping SE structure, a higher phosphorus concentration is obtained under a higher density laser condition, but the silicon wafer is more damaged (due to POCl) 3 The PSG formed by diffusion has almost no absorption to the used laser wavelength), and the improvement of the battery efficiency cannot be effectively realized.
Disclosure of Invention
Aiming at the defects in the prior art, the invention provides a high-efficiency battery based on nanometer silicon slurry containing high-concentration boron and a manufacturing method thereof.
According to one aspect of the invention, a method for manufacturing a high-efficiency battery based on nano silicon slurry containing high-concentration boron is disclosed, and the technical scheme is as follows:
a manufacturing method of a high-efficiency battery based on nanometer silicon slurry containing high-concentration boron comprises the following steps:
s1, taking a silicon wafer, cleaning and texturing, setting an SE (selective emitter) area on the front surface of the silicon wafer, and printing phosphorus-containing nano silicon slurry in the SE area;
s2, performing phosphorus diffusion in the POCl3 atmosphere, and forming a phosphorus-doped region in the SE region;
s3, removing phosphorosilicate glass formed on the surface of the silicon wafer in the phosphorus diffusion process, carrying out back etching, depositing an antireflection film on the front side of the silicon wafer, and depositing a passivation film on the back side of the silicon wafer;
s4, printing high-concentration boron nano silicon slurry on the passivation film on the back of the silicon wafer, and scanning by using laser to realize localized boron doping;
s5, printing aluminum paste on the back surface of the silicon wafer, and printing silver paste on the SE structure on the front surface of the silicon wafer;
and S6, sintering to form the battery.
Preferably, in step S4, the high-concentration boron nano-silicon slurry means that the boron-silicon molar ratio is 0.2-2.5.
Preferably, in step S4, the printing area of the high-concentration boron nano-silicon slurry is larger than the set area for locally doping boron.
Preferably, in step S4, the laser has a wavelength of 532nm to 1040nm.
Preferably, in step S4, the thickness of the high-concentration boron nano-silicon paste printed on the passivation film on the back surface of the silicon wafer is 1.5 to 2.5 μm after being a dry film.
Preferably, the sintering temperature is 570-780 ℃.
Preferably, the step S1 further comprises drying the phosphorus-containing nano silicon slurry, wherein the average particle size of silicon nanoparticles in the phosphorus-containing nano silicon slurry is not more than 50nm, and the phosphorus content is not less than 5x10^19atoms/cm3; the drying temperature is 180-250 ℃, and the drying time is 8-15min.
Compared with the prior art, the manufacturing method of the high-efficiency battery based on the high-concentration boron-containing nano silicon slurry has the following beneficial effects:
(1) At this stage, the mass-producible forming method of the back electrode only uses the aluminum paste, and for the battery without the front-side SE structure, the high-temperature sintering condition of the front silver must be matched, and the over-excited reaction between the aluminum and the silicon under the high-temperature condition must weaken or offset the efficiency improvement effect due to the local boron doping.
The B/Al-BSF (boron-aluminum mixed back field) formed by partially doping boron and sintering aluminum paste is adopted on the back surface to replace the Al-BSF (aluminum back field) in the traditional PERC (Passivated Emitter back field Contact) battery, the prepared battery is similar to a PERL (Passivated Emitter Rear Localized, passivated Emitter back local diffusion) battery in structure, the conversion efficiency of the battery can be improved, and the absolute efficiency value of the battery can be improved by more than 0.4% compared with that of the traditional SE-PERC battery.
(2) Compared with the traditional method which adopts pure POCl 3 Gas diffusion of (2)Firstly presetting a region for forming an SE structure on the front surface of a silicon wafer, then printing silicon nano particle slurry containing quantitative phosphorus concentration and capable of easily and efficiently achieving local high-concentration phosphorus diffusion requirement in the SE region, and then, further printing POCl 3 Conventional thermal diffusion of phosphorus is performed in an atmosphere to form the desired SE structure with a higher concentration of phosphorus. The SE structure can greatly reduce the surface resistance Rs between the positive silver and the silicon wafer (the surface resistance Rs can be controlled to be 50-90 ohm/sq), and the phosphorus-doped SE structure with higher concentration can reduce the sintering temperature, thereby furthest protecting the formed boron back surface field from being eroded by aluminum paste, further effectively improving the battery efficiency, and simultaneously reducing the sintering temperature, reducing the energy consumption and improving the productivity.
(3) Compared with the traditional method in which the SE structure is formed in a laser PSG mode, the method has the advantages that the thermal diffusion process is adopted, damage to the silicon wafer in the SE structure doping stage is avoided, improvement of the cell efficiency and improvement of long-term stability are facilitated, the requirement on equipment is low, a laser with the requirement on the mass production capacity is not required, compatibility with the existing PERC technology is high, only the phosphorus-containing silicon slurry is additionally used on the basis of the standard PERC technology, a printing process with an alignment function is added, upgrading from a standard PERC production line to a production line required by the technology is facilitated, and cost can be reduced.
According to another aspect of the invention, a high-efficiency battery manufactured by the method is disclosed, and the technical scheme is as follows:
a high efficiency battery made by the above method comprising: silver electrode, anti-reflection film, silicon chip, aluminum paste layer and passive film,
a phosphorus heavily-doped region and a light-doped region are arranged on the front surface of the silicon wafer, the anti-reflection film is arranged on the outer layer of the light-doped region, the phosphorus heavily-doped region penetrates through the anti-reflection film to be in contact with the silicon wafer, and the silver electrode is arranged on the phosphorus heavily-doped region;
the passivation film is arranged on the back surface of the silicon wafer, a boron heavily-doped region is arranged on the passivation film, the boron heavily-doped region penetrates through the passivation film to be in contact with the silicon wafer, and the aluminum paste layer is arranged on the passivation film.
Preferably, the silicon wafer is a P-type monocrystalline silicon wafer.
Preferably, the Rs (i.e., surface resistance) of the phosphorus-doped region is 55-60ohm/sq, and the Rs of the boron-doped region is 12 ± 2ohm/sq.
According to the high-efficiency battery disclosed by the invention, due to the SE structure with the high phosphorus concentration on the front surface, the silver electrode and the silicon wafer can be in good contact under the low-temperature sintering condition, and under the low-temperature sintering condition, an over-excited reaction between back aluminum and silicon can be inhibited, so that a B-BSF (boron back field) effect formed by doping boron in the previous local region laser is protected, and the photoelectric conversion efficiency (absolute value) of the battery can be improved by more than 0.4%.
Drawings
Fig. 1 is a process flow diagram of a method for manufacturing a high-efficiency battery based on a nano-silicon slurry containing high-concentration boron in an embodiment of the present disclosure;
FIG. 2 is a schematic structural diagram of a high-efficiency battery (i.e., an SE-PERL battery) based on nano silicon slurry containing high-concentration boron in the embodiment of the disclosure;
FIG. 3 is a comparison of a manufacturing method of a high-efficiency battery based on nano-silicon slurry containing high-concentration boron in the embodiment of the present disclosure and a prior art process flow;
fig. 4 is a graph comparing the effect of the high-efficiency battery based on the nano-silicon slurry containing high concentration boron in the embodiment of the present disclosure with the battery in the prior art.
In the figure: 1-a silver electrode; 2-antireflection film; 3-a light doping area; 4-a phosphorus heavily doped region; 5-a silicon wafer; a 6-boron heavily doped region; 7-aluminum paste layer; 8-a passivation film;
a is a standard PERC; b is SE-PERC; c is SE-PERL.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, embodiments of the present invention. All other embodiments, which can be obtained by a person skilled in the art without any inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Since in the prior art (especially the PERC technology),due to the use of POCl 3 The phosphorus diffusion concentration realized by the PSG formed after diffusion is limited, and the sintering temperature is high, so that a series of defects cause the problem of low battery conversion efficiency. Therefore, in order to solve the above problems in the prior art, the present invention discloses a method for manufacturing a high efficiency battery based on a nano silicon slurry containing high concentration boron, comprising:
s1, taking a silicon wafer, cleaning and texturing, setting an SE (selective emitter) area on the front surface of the silicon wafer, and printing phosphorus-containing nano silicon slurry in the SE area;
s2, performing phosphorus diffusion in the POCl3 atmosphere, forming phosphorus-silicon glass (PSG) on the surface of the silicon wafer, and forming a phosphorus-heavy doping region in the SE region;
s3, removing phosphorosilicate glass formed on the surface of the silicon wafer in the phosphorus diffusion process, carrying out back etching, depositing an antireflection film on the front side of the silicon wafer, and depositing a passivation film on the back side of the silicon wafer;
s4, printing high-concentration boron nano silicon slurry on the passivation film on the back of the silicon wafer, and scanning by using laser to realize localized boron doping;
s5, printing aluminum paste on the back surface of the silicon wafer, and printing silver paste on the SE structure on the front surface of the silicon wafer;
and S6, sintering to form the battery.
Correspondingly, the present disclosure also provides a high efficiency battery prepared by the above method, comprising: silver electrode, anti-reflection film, silicon chip, aluminium paste layer, passive film,
a phosphorus heavily-doped region and a light-doped region are arranged on the front surface of the silicon wafer, the anti-reflection film is arranged outside the light-doped region, the phosphorus heavily-doped region penetrates through the anti-reflection film to be in contact with the silicon wafer, and the silver electrode is arranged on the phosphorus heavily-doped region;
the passivation film is arranged on the back surface of the silicon wafer, a boron heavily-doped region is arranged on the passivation film, the boron heavily-doped region penetrates through the passivation film to be in contact with the silicon wafer, and the aluminum paste layer is arranged on the passivation film.
Example 1
As shown in fig. 1, the present embodiment discloses a method for manufacturing a high efficiency battery based on a nano silicon slurry containing high concentration of boron, which includes:
s1, taking a silicon wafer, cleaning and texturing, setting an SE (selective emitter) area on the front surface of the silicon wafer, and printing phosphorus-containing nano silicon slurry in the SE area.
In this embodiment, the silicon wafer is a P-type monocrystalline silicon wafer, and certainly, other types of silicon wafers may also be used, which is not further limited in this embodiment.
In this embodiment, the step S1 further includes drying the printed phosphorus-containing nano-silica slurry. Wherein the average grain diameter of silicon nano particles in the phosphorus-containing nano silicon slurry is not more than 50nm, and the phosphorus content is not less than 5x10^ s 19 atoms/cm 3 . The drying temperature is preferably 180-250 ℃, the drying time is preferably 8-15min, the thickness of the phosphorus-containing film layer formed after drying is preferably controlled to be about 1.8 μm, and the line width is preferably controlled to be about 148 μm.
It should be noted that the printing in this embodiment preferably uses a conventional screen printing technique, and the details are not described below.
Step S2, in POCl 3 Phosphorus diffusion is performed in the atmosphere, so that phosphorus-silicon glass (PSG, i.e., a silicon dioxide layer containing phosphorus atoms) is formed on the surface of the silicon wafer, and a phosphorus-heavily doped region (n + +) is formed in the SE region.
In the present embodiment, the phosphorus diffusion is performed under the conventional phosphorus thermal diffusion process conditions, so as to form a low-damage phosphorus-doped region (n + +) in the region printed with the phosphorus-containing nano-silicon paste, i.e., to form an SE structure, and the SE structure is a light-doped region (n +) opposite to the light-receiving portion (i.e., between the electrode and the electrode), which helps to ensure that the silver electrode on the front side of the battery and the silicon substrate are in good contact under the low-temperature sintering condition.
In this embodiment, the Rs (i.e., surface resistance) of the heavily doped region is preferably controlled to be 55-60ohm/sq.
And S3, removing the phosphorosilicate glass, etching the back, depositing an antireflection film on the front side of the silicon wafer, and depositing a passivation film on the back side of the silicon wafer.
In this embodiment, the phosphorosilicate glass is removed and the back etching is performed according to a method in a normal PERC process, which is not described herein again. Al is preferably used for both the antireflective film and the passivation film 2 O 3 Or SiN x The material is deposited.
And S4, printing high-concentration boron nano silicon slurry on the passivation film on the back of the silicon wafer, and scanning by using laser to realize the localized boron doping so as to form a boron heavily doped region (p + +).
In consideration of the improvement effect on the cell efficiency due to the partial doping of boron in the method of the embodiment of the present disclosure, the improvement effect is closely related to the total amount and the surface concentration of boron entering the silicon wafer through the opening of the passivation film under the printed high-concentration boron nano-silicon paste pattern. In the high-concentration boron nano-silica slurry (organic solvent dispersion with solid content including silicon-boron composite nanoparticles being 5-10%, hereinafter referred to as borosilicate-containing slurry) in the embodiment, the boron-silicon molar ratio should be not less than 0.2, preferably 0.2-2.5. Because the thickness of the boron-containing silicon paste layer after the printed boron-containing silicon paste is dried under certain conditions (preferably, the drying temperature is 200 ℃, and the drying time is 10 min) directly influences the total amount of boron entering the silicon wafer through the opening of the passivation film, in order to avoid the damage of laser to the passivation film and the silicon wafer except the opening of the passivation film, the wavelength of the laser should be under the premise of meeting the opening and doping of the passivation film, and the boron-containing silicon paste can absorb the boron-containing silicon paste, namely: the irradiation energy of the laser ensures that the passive film can be easily opened after the absorption of the boron-containing silicon slurry layer is passed through, and the boron amount required for effectively improving the battery efficiency is realized (practice proves that the boron doping amount is 10^ b 21 atoms/cm 3 In the above process, the cell efficiency can be effectively improved, and the improvement effect of the cell efficiency can be more than 0.4% by doping the silicon wafer with the doping material. In this embodiment, the laser wavelength is preferably 532nm to 1040nm, so as to avoid a problem that the laser energy density reaching the surface of the passivation film is too low to achieve a sufficient doping amount, and a problem that the laser energy is too high to possibly cause a reduction in battery efficiency caused by damage to the surrounding passivation film or the silicon wafer. Theoretically, the higher the boron content in the boron-containing silicon paste, the smaller the film thickness after drying, the more likely the desired boron doping amount can be achieved with the smaller laser energy density, and in practice, it is found that it is difficult to uniformly control the thickness of the boron-containing silicon paste after drying to be less than 1 μm by using the screen printing technique, and therefore, in this embodiment, the dry film thickness of the printed boron-containing silicon paste is preferably 1.5-2.5 μm. In addition, the thinner dry film thickness is also beneficial to meeting the mass production condition.
In addition, considering the problems of damage caused by direct irradiation of laser on the silicon wafer and the precision of laser alignment, the printing pattern of the high-concentration boron nano-silicon slurry is larger than the contact area of the preset back aluminum and the silicon wafer, that is, the printing area of the high-concentration boron nano-silicon slurry should be larger than the set area of localized boron doping, such as: good contact between the aluminum backing and the silicon wafer requires a line width of 40um, and the line width of the printing of the borosilicate containing paste should be above 80 um.
And S5, printing aluminum paste on the back surface of the silicon wafer, and printing silver paste on the SE structure on the front surface of the silicon wafer.
In this embodiment, printing the aluminum paste on the back surface of the silicon wafer refers to: and (3) printing the aluminum paste capable of being sintered at low temperature (such as the special aluminum paste A for the PERC battery) on the whole (single-sided battery) or part (double-sided battery) of the printing area capable of covering the boron-containing silicon paste, and printing the silver paste on the front side by adopting the special silver paste B for the PERC battery (obtaining a silver electrode after sintering).
And S6, sintering to form the battery.
Specifically, on the premise of ensuring that good contact between the front silver electrode and the silicon wafer is achieved, the front silver and the back aluminum are subjected to co-sintering at the lowest temperature, good contact between the front silver electrode and the silicon wafer and good contact between the back aluminum paste layer and the silicon wafer are formed through one-step sintering, and finally the high-efficiency battery with the SE-PERL structure is formed, as shown in FIG. 2. In the embodiment, the sintering temperature is 570-780 ℃ which is lower than the sintering temperature (about 850 ℃) of the conventional RERC process, and low-temperature sintering is realized.
The embodiment also discloses a high-efficiency battery based on the high-concentration boron-containing nano silicon slurry prepared by the method, which comprises a silver electrode 1, an anti-reflection film 2, a silicon wafer 5, an aluminum slurry layer 7 and a passivation film 8, as shown in fig. 2. Wherein:
a silicon wafer 5, preferably a P-type monocrystalline silicon wafer is used as a substrate;
a phosphorus heavily-doped region 4 (namely an SE structure) and a lightly-doped region 3 are arranged on the front surface of the silicon wafer 5, an anti-reflection film 2 is arranged outside the lightly-doped region 3, the phosphorus heavily-doped region 4 penetrates through the anti-reflection film 2 to form good contact with the silicon wafer, and a silver electrode 1 (obtained by sintering silver paste) is arranged in the phosphorus heavily-doped region 4;
the back of the silicon wafer 5 is provided with a passive film 8, the passive film 8 is provided with a boron heavily-doped region 6, the boron heavily-doped region 6 penetrates through the passive film 8 to form good contact with the silicon wafer 5, rs of the boron heavily-doped region 6 is 12 +/-2 ohm/sq, and an aluminum paste layer 7 is arranged outside the passive film 8.
According to the high-efficiency battery prepared by the method disclosed by the embodiment of the disclosure, due to the SE structure with high phosphorus concentration on the front surface, the silver electrode and the silicon wafer can form good contact under the low-temperature sintering condition, and under the low-temperature sintering condition, the over-excited reaction between the back aluminum and the silicon can be inhibited, so that the B-BSF (boron back field) effect formed by doping boron with the local localized laser is protected, and the improvement of the battery efficiency is realized.
According to the electrical property evaluation results of the test cells, optimization is performed on the type selection and sintering conditions of the low-temperature sintering aluminum paste and the low-temperature sintering silver paste, so that the local boron doping effect is maximized, and the photoelectric conversion efficiency (also referred to as cell efficiency, abbreviated as Eff) of the cell is improved by more than 0.4% compared with that of the SE-PERC cell.
Example 2
As shown in fig. 3 c, this embodiment discloses a method for manufacturing a high-efficiency battery based on a nano silicon slurry containing high-concentration boron, which specifically includes the following steps:
taking a p-type monocrystalline silicon wafer with the size of 156 mm-156 mm and the thickness of 180 mu m, selecting a set SE region on the front surface of the silicon wafer after cleaning and texturing, and printing silicon nano particles with the average grain size not more than 50nm and the phosphorus content not less than 5x10^ on the SE region 19 atoms/cm 3 The phosphorus-containing nano silicon slurry is dried for 10min at the temperature of 200 ℃, wherein the amount of the printed phosphorus-containing nano silicon slurry is ensured that the thickness of a dry film is 1.8 mu m and the line width is 148 mu m after the drying is finished.
Then put into a diffusion furnace to be in POCl 3 Phosphorus diffusion is performed under the atmosphere, phosphorus-silicon glass PSG is formed on the surface of the silicon wafer, and a low-damage phosphorus-doped region (n + +) is formed in the region printed with the phosphorus-containing nano-silica paste, i.e., an SE structure is formed, wherein Rs of the phosphorus-doped region is controlled to be 55-60ohm/sq.
Then, PSG is removed, back etching is carried out, an antireflection film (such as aluminum oxide, silicon nitride and the like) is deposited on the front surface of the silicon wafer, and a passivation film (such as aluminum oxide, silicon nitride and the like) is deposited on the back surface of the silicon wafer.
Then, a boron-silicon (B/Si) nano-silica slurry containing boron at a high concentration in a molar ratio of 2.2 (in which the silicon-boron composite nanoparticles have a solid content of 8% and the average particle diameter of the nanoparticles is about 20nm) was printed on the passivation film on the rear surface, and TEM photographs showed that most of boron was coated with silicon. Drying at 200 deg.C for 10min, wherein the printed high-concentration boron-containing nanometer silicon slurry has average thickness of 1.6 μm and average line width of 94 μm; and scanning a laser with a pulse waveform having a flat top wave characteristic, a spot size of 40 μm × 40 μm and an output power of 40W in alignment with the pattern of the printing region of the high-concentration boron-containing nano-silicon paste, so as to obtain a laser irradiation pattern with an average line width of about 42um, and controlling Rs of the local boron doping region to be 12 ± 2ohm/sq.
And then, printing aluminum paste A capable of being sintered at low temperature on the whole back surface, and printing silver paste B capable of being sintered at low temperature and slightly smaller than the pattern of the SE structure in the area of the front surface aligned with the SE structure.
And finally, performing co-sintering at 720 ℃ to obtain the high-efficiency battery with the SE-PERL structure.
Through tests, the average photoelectric conversion efficiency of 50 battery pieces prepared by the method is 22.05%, and the specific test result is shown in fig. 4.
Example 3
The embodiment discloses a manufacturing method of a high-efficiency battery based on high-concentration boron-containing nano silicon slurry, which is mainly different from the embodiment 2 in that an SE-PERC improved method developed by Diel laser company is adopted to form an SE structure, and the specific steps are as follows:
adopting a p-type monocrystalline silicon wafer with the dimension of 156 mm and the thickness of 180 mu m, cleaning and texturing, and directly putting the p-type monocrystalline silicon wafer into a diffusion furnace for POCl 3 Phosphorus was diffused in the atmosphere under the same conditions as in example 1 to form PSG;
then, the PSG formed by thermal phosphorus diffusion was irradiated with a pulse laser with a flat top wave characteristic with an output power of 20W, so as to form a SE structure equivalent to that of embodiment 1, wherein the line width of the laser processing region is about 120 μm, and the laser doping region Rs is about 70-90ohm/sq;
then, after PSG removal and back etching, depositing an antireflection film on the front side and depositing a passivation film on the back side;
then, the same high-concentration boron-containing nano-silica slurry (i.e., B/Si molar ratio of 2.2, etc.) as in example 1 was printed on the passivation film on the back surface, and dried at 200 ℃ for 10min to obtain a dry film having an average thickness of about 1.7 μm and an average line width of 96 μm, and then subjected to aligned laser irradiation under the same conditions as in example 1 to obtain a laser irradiation pattern having an average line width of about 44 μm, and the local boron-doped region Rs was controlled to 12 ± 2ohm/sq;
then, printing special PERC aluminum paste C on the back surface of the base plate, and printing silver paste D which is slightly smaller than an SE structure pattern and can be sintered at a low temperature in the area of the front surface aligned to the SE structure;
and finally, carrying out co-sintering at 780 ℃ to obtain the high-efficiency battery piece with the SE-PERL mechanism.
Through testing, the average photoelectric conversion efficiency of 50 battery pieces manufactured by the method is 21.88%, and the specific test result is shown in fig. 4.
Comparative example 1
A battery prepared by SE-PERC method using Diel laser was used as comparative example 1, and the preparation process was as follows:
SE structure was prepared using the same method as in example 3;
the rear surface passivation film is not printed with borosilicate-containing slurry (different from the embodiment 2 and 3), the pulse wave type of the laser for opening the holes of the passivation film still has flat top wave characteristics, the spot size is also 40 mu m by 40 mu m, the output power is 25W, and a slotted area with the average line width of 42 mu m is formed on the passivation film after laser scanning;
on the basis, the back surface of the base is printed with standard PERC aluminum paste, and the front surface of the base is printed with silver paste slightly smaller than the SE structure pattern in the area aligned with the SE structure;
and co-sintering the back aluminum and the front silver at 840 ℃ to finally finish the manufacturing of the SE-PERC battery.
Through tests, the average efficiency of the 50 battery pieces manufactured by the method is 21.65%, and the specific test result is shown in fig. 4.
As can be seen from fig. 4, the open-circuit voltage (Voc), the short-circuit current (Isc), the Fill Factor (FF), and the cell efficiency (Eff) of the cell fabricated according to the embodiment of the present disclosure are all better than those of the cell fabricated according to the comparative example, so that the method according to the embodiment of the present disclosure can effectively improve the cell efficiency, and the improvement of the cell efficiency of the cell having the SE structure formed by the method according to embodiment 2 of the present disclosure is more significant.
It will be understood that the above embodiments are merely exemplary embodiments taken to illustrate the principles of the present invention, which is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made to the embodiments of the present invention without departing from the spirit and scope of the invention, and such modifications and improvements are also considered to be within the scope of the invention.
Claims (8)
1. A manufacturing method of a high-efficiency battery based on high-concentration boron-containing nano silicon slurry comprises the following steps:
s1, taking a silicon wafer, cleaning and texturing, setting an SE (selective emitter) area on the front surface of the silicon wafer, and printing phosphorus-containing nano silicon slurry in the SE area;
s2 in POCl 3 Carrying out phosphorus diffusion in the atmosphere to form a phosphorus heavily-doped region in the SE region, namely forming an SE structure;
s3, removing phosphorosilicate glass formed on the surface of the silicon wafer in the phosphorus diffusion process, carrying out back etching, depositing an antireflection film on the front side of the silicon wafer, and depositing a passivation film on the back side of the silicon wafer;
s4, printing high-concentration boron nano silicon slurry on the passivation film on the back of the silicon wafer, and scanning by using laser to realize localized boron doping;
s5, printing aluminum paste on the back surface of the silicon wafer, and printing silver paste on the SE structure on the front surface of the silicon wafer;
s6, sintering to form a battery;
the average grain diameter of silicon nano particles in the phosphorus-containing nano silicon slurry is not more than 50nm, and the phosphorus content is not less than 5x10^ 19 atoms/cm 3 The Rs of a phosphorus heavily doped region is controlled to be 55-60ohm/sq;
the high-concentration boron nano silicon slurry means that the boron-silicon molar ratio is 0.2-2.5;
the sintering temperature is 570-720 ℃.
2. The method for manufacturing a high-efficiency battery based on the high-concentration boron-containing nano silicon slurry as claimed in claim 1, wherein in step S4, the printing area of the high-concentration boron-containing nano silicon slurry is larger than the set area of the localized boron doping.
3. The method for manufacturing a high-efficiency battery based on the nano silicon slurry containing high-concentration boron according to claim 1, wherein in the step S4, the wavelength of the laser is 532nm to 1040nm.
4. The method for manufacturing the high-efficiency battery based on the high-concentration boron-containing nano silicon slurry as claimed in claim 1, wherein in step S4, the thickness of the high-concentration boron-containing nano silicon slurry printed on the passivation film on the back surface of the silicon wafer is 1.5-2.5 μm after being a dry film.
5. The method for manufacturing a high-efficiency battery based on the nano silicon slurry containing high-concentration boron according to claim 1, wherein the step S1 further comprises drying the nano silicon slurry containing phosphorus,
the drying temperature is 180-250 ℃, and the drying time is 8-15min.
6. A high-efficiency battery made by the method of any one of claims 1 to 5, comprising a silver electrode (1), an antireflective film (2), a silicon wafer (5), an aluminum paste layer (7) and a passivation film (8),
a phosphorus heavily-doped region (4) and a lightly-doped region (3) are arranged on the front surface of the silicon wafer, the anti-reflection film is arranged outside the lightly-doped region, the phosphorus heavily-doped region penetrates through the anti-reflection film to be in contact with the silicon wafer, and the silver electrode is arranged on the phosphorus heavily-doped region;
the passivation film is arranged on the back surface of the silicon wafer, a boron heavily-doped region (6) is arranged on the passivation film, the boron heavily-doped region penetrates through the passivation film to be in contact with the silicon wafer, and the aluminum paste layer is arranged on the passivation film.
7. The high-efficiency battery based on the nano silicon slurry containing high-concentration boron as claimed in claim 6, wherein the silicon wafer is a P-type monocrystalline silicon wafer.
8. The high-efficiency battery based on the nano silicon slurry containing high concentration of boron according to claim 7, wherein the Rs of the phosphorus heavily doped region (4) is 55-60ohm/sq, and the Rs of the boron heavily doped region (6) is 12 +/-2 ohm/sq.
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185020A (en) * | 2011-03-29 | 2011-09-14 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method for front electrode of crystalline silicon solar battery |
| CN102956719A (en) * | 2011-08-29 | 2013-03-06 | 北京师范大学 | Selectivity emitting electrode solar battery prepared by using silicon micro nanometer structure |
| CN103489932A (en) * | 2013-09-04 | 2014-01-01 | 苏州金瑞晨科技有限公司 | Nanometer silicon phosphorus slurry, method for preparing same and application of same |
| CN107863419A (en) * | 2017-11-02 | 2018-03-30 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of two-sided PERC crystal silicon solar energy batteries |
| CN108365022A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | The preparation method of the black policrystalline silicon PERC battery structures of selective emitter |
| CN110255888A (en) * | 2019-06-12 | 2019-09-20 | 浙江光达电子科技有限公司 | Glass composition and preparation method thereof for crystal silicon solar PERC cell front side silver slurry |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101937940B (en) * | 2010-08-26 | 2012-11-14 | 常州天合光能有限公司 | Technology for manufacturing selective emitter junction solar cell by printed phosphorous source one-step diffusion method |
| CN103295886B (en) * | 2013-05-23 | 2016-01-13 | 刘国钧 | A kind of preparation method of phosphorus composition clad nano silicon slurry and application thereof |
| CN104617164A (en) * | 2015-02-11 | 2015-05-13 | 苏州金瑞晨科技有限公司 | Nano silicon boron slurry and method for preparing solar cell with the same |
| CN104638033A (en) * | 2015-02-11 | 2015-05-20 | 苏州金瑞晨科技有限公司 | Nano silicon boron slurry and method for preparing PERL solar battery by utilizing nano silicon boron slurry |
| CN104752562A (en) * | 2015-03-17 | 2015-07-01 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of local boron back surface passive field solar cell |
| CN110504332A (en) * | 2019-09-04 | 2019-11-26 | 韩华新能源（启东）有限公司 | A kind of preparation method of PERC battery and two-sided selective emitter PERC battery |
-
2019
- 2019-12-25 CN CN201911359161.9A patent/CN113035996B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102185020A (en) * | 2011-03-29 | 2011-09-14 | 中国科学院宁波材料技术与工程研究所 | Manufacturing method for front electrode of crystalline silicon solar battery |
| CN102956719A (en) * | 2011-08-29 | 2013-03-06 | 北京师范大学 | Selectivity emitting electrode solar battery prepared by using silicon micro nanometer structure |
| CN103489932A (en) * | 2013-09-04 | 2014-01-01 | 苏州金瑞晨科技有限公司 | Nanometer silicon phosphorus slurry, method for preparing same and application of same |
| CN107863419A (en) * | 2017-11-02 | 2018-03-30 | 国家电投集团西安太阳能电力有限公司 | A kind of preparation method of two-sided PERC crystal silicon solar energy batteries |
| CN108365022A (en) * | 2018-01-30 | 2018-08-03 | 无锡尚德太阳能电力有限公司 | The preparation method of the black policrystalline silicon PERC battery structures of selective emitter |
| CN110255888A (en) * | 2019-06-12 | 2019-09-20 | 浙江光达电子科技有限公司 | Glass composition and preparation method thereof for crystal silicon solar PERC cell front side silver slurry |
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