CN113008171A - Method for determining thickness of sample - Google Patents
Method for determining thickness of sample Download PDFInfo
- Publication number
- CN113008171A CN113008171A CN202110296956.0A CN202110296956A CN113008171A CN 113008171 A CN113008171 A CN 113008171A CN 202110296956 A CN202110296956 A CN 202110296956A CN 113008171 A CN113008171 A CN 113008171A
- Authority
- CN
- China
- Prior art keywords
- sample
- thickness
- signal intensity
- determining
- electron microscope
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
- G01B15/00—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons
- G01B15/02—Measuring arrangements characterised by the use of electromagnetic waves or particle radiation, e.g. by the use of microwaves, X-rays, gamma rays or electrons for measuring thickness
Abstract
The embodiment of the application provides a method for determining the thickness of a sample, which is applied to a scanning transmission electron microscope, wherein the method comprises the following steps: acquiring the reference signal intensity of a reference sample; determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample; acquiring the actual signal intensity of a sample to be detected through the scanning transmission electron microscope, wherein the sample to be detected and the reference sample are made of the same material; and determining the thickness of the sample to be detected according to the reference linear relation and the actual signal intensity.
Description
Technical Field
The application relates to the field of semiconductor testing, and relates to but is not limited to a method for determining the thickness of a sample.
Background
In the semiconductor field, characterization of microstructure and composition is the ultimate means of device process monitoring and Physical Failure Analysis (PFA). For high spatial resolution domain characterization, the sections are usually sectioned by Focused Ion Beam (FIB) and then characterized by Transmission Electron Microscope (TEM). Both Critical Dimension (CD) characterization and compositional characterization based on TEM are very sensitive to sample thickness. For example, if the sample is too thick, the oxide in the Channel Hole (CH) will be thinner and the nitride will be thicker. For another example, if the sample is too thick, the quantification of chloride ions in the trench holes will be low. In order to achieve high accuracy of size and composition comparison, the thickness of the sample is a critical factor that must be tightly controlled.
In the related art, there are three ways to measure the thickness of a sample, namely, directly measuring by an electron Beam (E-Beam) of FIB; secondly, calculating through the experience of TEM light transmittance; and thirdly, quantitative characterization by Electron Energy Loss Spectroscopy (EELS). Wherein, the thickness precision of the sample obtained by the direct measurement of the electron beam of the FIB is poor, and the measurement result is inaccurate; substances with high atomic number cannot be accurately characterized in an empirical calculation mode of TEM light transmittance; when the thickness of a sample is quantitatively characterized through an electron energy loss spectrum, an energy filtering Imaging system (GIF) needs to be equipped, the testing process is complex, and the testing cost is high.
Therefore, at present, there is no efficient and rapid quantitative characterization method for sample thickness suitable for all TEM samples.
Disclosure of Invention
In view of the above, the embodiments of the present application provide a method for determining a thickness of a sample.
The technical scheme of the application is realized as follows:
the embodiment of the application provides a method for determining the thickness of a sample, which is applied to a scanning transmission electron microscope and comprises the following steps:
acquiring the reference signal intensity of a reference sample;
determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample;
acquiring the actual signal intensity of a sample to be detected through the scanning transmission electron microscope, wherein the sample to be detected and the reference sample are made of the same material;
and determining the thickness of the sample to be detected according to the reference linear relation and the actual signal intensity.
In some embodiments, obtaining the actual signal intensity of the sample to be measured by the scanning transmission electron microscope comprises:
projecting the convergent electron beam generated by the scanning transmission electron microscope to the surface of the sample to be detected so that the convergent electron beam is scattered under the action of the sample to be detected to generate a scattered electron beam;
and collecting the scattered electron beams through a high-angle dark field image probe of the scanning transmission electron microscope to obtain the actual signal intensity of the sample to be detected.
In some embodiments, said determining a reference linear relationship between signal intensity and thickness of said reference sample from said reference signal intensity and a reference thickness of said reference sample comprises:
obtaining the reference thickness for each of the reference samples in a set of reference samples;
projecting a converging electron beam generated by the scanning transmission electron microscope onto the surface of each of the reference samples to obtain the reference signal intensity of each of the reference samples;
determining the reference linear relationship between signal intensity and thickness of the reference sample by a plurality of the reference signal intensities and a reference thickness of the reference sample corresponding to each of the reference signal intensities.
In some embodiments, the reference sample has a wedge-shaped structure;
the determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample comprises:
determining a plurality of said reference thicknesses of a reference sample of said wedge-shaped structure at different positions of the wedge-shaped surface;
projecting a converging electron beam generated by the scanning transmission electron microscope at the different locations of the reference sample to obtain a plurality of reference signal intensities of the reference sample at the different locations;
and determining the reference linear relation between the signal intensity and the thickness of the reference sample according to a plurality of reference signal intensities and the reference thickness of the reference sample corresponding to each reference signal intensity.
In some embodiments, the reference sample has a plurality of step structures, each of the step structures having a step face and a vertical face perpendicular to the step face;
the determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample comprises:
determining the thickness of each step structure as the reference thickness, wherein the thickness of the step structure is the thickness of the reference sample below the step surface;
projecting the convergent electron beams generated by the scanning transmission electron microscope to different step surfaces of the reference sample to acquire a plurality of reference signal intensities of the reference sample under the different step surfaces;
determining the reference linear relationship between the signal intensity and the thickness of the reference sample by a plurality of the reference signal intensities and the reference thicknesses corresponding to the step faces corresponding to each of the reference signal intensities.
In some embodiments, determining the thickness of the sample to be tested according to the reference linear relationship and the actual signal intensity includes:
determining the reference linear relation as a target linear relation between the signal intensity and the thickness of the sample to be detected;
taking the actual signal intensity as an independent variable of the target linear relation to perform linear calculation to obtain a dependent variable corresponding to the independent variable;
and determining the dependent variable as the thickness of the sample to be detected.
In some embodiments, the method further comprises:
and verifying the stability of the machine table of the scanning transmission electron microscope and the high-angle dark field image probe.
And when the stability verification of the machine table and the high-angle dark field image probe passes, acquiring the actual signal intensity of the sample to be detected.
In some embodiments, verifying the stability of the stage of the scanning transmission electron microscope and the high angle darkfield imaging probe comprises:
setting working parameters of a machine table of the scanning transmission electron microscope and verification parameters of the high-angle dark field image probe;
periodically acquiring a plurality of background signal intensities and a plurality of actual signal intensities of the verification sample under the working parameters and the verification parameters;
and verifying the stability of the machine of the scanning transmission electron microscope and the stability of the high-angle dark field image probe by verifying the plurality of background signal intensities and the plurality of actual signal intensities of the sample.
In some embodiments, said verifying the stability of the stage of the scanning transmission electron microscope and the high angle darkfield imaging probe by said verifying a plurality of background signal intensities and a plurality of actual signal intensities of the sample comprises:
obtaining a first standard deviation between a plurality of background signal intensities for the validation sample;
obtaining a second standard deviation between a plurality of actual signal intensities for the validation sample;
when the first standard deviation is smaller than a first preset standard deviation and the second standard deviation is smaller than a second preset standard deviation, determining that the stability verification of a machine table of the scanning transmission electron microscope and the stability verification of the high-angle dark field image probe are passed;
and when the first standard deviation is greater than or equal to the first preset standard deviation or when the second standard deviation is greater than or equal to the second preset standard deviation, determining that the stability verification of the machine table of the scanning transmission electron microscope and the high-angle dark field image probe fails.
In some embodiments, the high-angle dark field imaging probe is under preset probe parameters while obtaining the actual signal intensity of the sample to be measured;
the preset probe parameters include: presetting a background deduction parameter and a gain parameter;
wherein the preset background subtraction parameter is a parameter which can enable a background signal of the sample to be detected to be 0; the preset gain parameter comprises 10% -40%.
In some embodiments, the sample to be tested comprises a three-dimensional memory, a crystalline sample, or an amorphous sample, and the sample to be tested is a transmission electron microscope sample.
According to the method for determining the thickness of the sample, firstly, the reference signal intensity of a reference sample is obtained, and the reference linear relation between the signal intensity and the thickness of the reference sample is determined according to the reference signal intensity and the reference thickness of the reference sample; secondly, acquiring the actual signal intensity of the sample to be detected through a scanning transmission electron microscope; because the thickness of the sample to be detected can be determined through the reference linear relation of the reference sample and the actual signal intensity of the sample to be detected, the rapid and efficient characterization of the thickness of the sample to be detected can be realized.
Drawings
In the drawings, which are not necessarily drawn to scale, like reference numerals may describe similar components in different views. Like reference numerals having different letter suffixes may represent different examples of similar components. The drawings illustrate generally, by way of example, but not by way of limitation, various embodiments discussed herein.
Fig. 1 is a schematic flow chart of an alternative implementation of a method for determining a thickness of a sample according to an embodiment of the present disclosure;
FIG. 2 is a schematic diagram of an alternative implementation of a method for determining a thickness of a sample according to an embodiment of the present disclosure;
fig. 3A is a schematic flow chart of an alternative implementation of the method for determining a thickness of a sample according to the embodiment of the present application;
FIG. 3B is a TEM image of a validation sample provided by an embodiment of the present application;
FIG. 3C is a graph of signal strength versus background subtraction parameters provided in accordance with an embodiment of the present invention;
FIGS. 3D and 3E are graphs showing the relationship between signal strength and gain parameters provided by embodiments of the present application;
FIG. 3F is a graph of signal strength versus thickness for an oxide wedge sample provided in an example of the present application;
FIG. 3G is a graph of signal strength versus thickness for wedge-shaped sample tungsten provided in an example of the present application;
FIG. 3H is a graph showing the variation of the signal level of chloride ions in the channel holes when the thickness of the sample is not clamped according to the example of the present application;
FIG. 3I is a signal amount variation spectrum of chloride ions in the channel hole after the thickness of the sample is clamped;
FIG. 3J is a graph of the distribution of germanium content in OTS before the thickness of the sample OTS is seized as provided by an embodiment of the present application;
FIG. 3K is a graph showing the distribution of the germanium content in the OTS after the thickness of the sample OTS is clamped as provided in the examples of the present application.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, specific technical solutions of the present invention will be described in further detail below with reference to the accompanying drawings in the embodiments of the present application. The following examples are intended to illustrate the present application but are not intended to limit the scope of the present application.
In the following description, suffixes such as "module" or "unit" used to denote elements are used only for facilitating the explanation of the present application, and have no specific meaning in themselves. Thus, "module" or "unit" may be used mixedly.
In the related art, there are three methods for measuring the thickness of a sample, namely, directly measuring the thickness of the sample by an electron beam of the FIB; secondly, calculating through the experience of TEM light transmittance; and thirdly, quantitatively characterizing through an electron energy loss spectrum.
When the thickness of the sample is directly measured by the Electron beam of the FIB, the measurement result is affected by the "bright edge effect" of a Scanning Electron Microscope (SEM), and the measurement result has poor precision and different etching rates of different substances, so that the actual thickness of the sample cannot be obtained by directly measuring the thickness. In addition, when the thickness of the sample is directly measured by the electron beam of the FIB, the electron beam and the sample are incident at a certain angle, the thickness of the sample is characterized by the secondary electron yield, the thickness of the sample can only be estimated very roughly, and the characterization precision is very poor.
When the thickness of a sample is calculated by adopting TEM light transmittance experience, the light transmittance of the material under TEM is obtained by correcting the light transmittance of amorphous materials with uniform components and lower atomic number and different thicknesses, and the thickness is calculated by the light transmittance, however, the method is only suitable for the amorphous materials with lower atomic number; in contrast, for a substance with a high atomic number, the TEM "transmittance" decreases rapidly, and the sensitive region is very narrow, so that a substance with a high atomic number cannot be estimated by the "transmittance". In addition, the method of estimating the thickness of the sample empirically through TEM "transmittance" cannot realize the characterization of the thickness of the crystalline substance due to the influence of diffraction contrast.
When the thickness of a sample is quantitatively characterized by using the EELS, the thickness of the sample is calculated according to the signal intensity ratio of a zero loss peak in a low-loss interval of the EELS, so that an energy filtering imaging system (the energy filtering imaging system is not a TEM standard accessory) is required to be arranged on a machine, the steps are complex, and the time is consumed. And the method of quantitative characterization of the thickness of a sample using EELS is only applicable to materials for which the inelastic scattering mean free path is known.
In summary, there is no efficient and rapid means for quantitative characterization of sample thickness suitable for all TEM samples.
Based on the above problems in the related art, the embodiments of the present application provide a method for determining a thickness of a sample, which can efficiently and quickly implement accurate characterization of the thickness of the sample.
Fig. 1 is a schematic flow chart of an alternative implementation of a method for determining a thickness of a sample, provided in an embodiment of the present application, the method is applied to a scanning transmission electron microscope, as shown in fig. 1, and the method includes the following steps:
and step S101, acquiring the reference signal intensity of the reference sample.
In the embodiment of the present application, the reference signal intensity is the intensity of a scattering signal generated after the reference sample and the electron beam act. Here, by a scanning transmission electron microscope, an electron beam that has been accelerated and condensed is projected onto the surface of a reference sample, the electron beam collides with atoms in the reference sample to change direction, solid angle scattering is generated, and acquisition of the reference signal intensity of the reference sample is achieved by collecting and detecting the intensity of the scattered signal.
And S102, determining a reference linear relation between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample.
In the embodiment of the present application, the reference linear relationship is a linear relationship that the reference thickness of the reference sample and the reference signal intensity of the reference sample satisfy, and when the reference thickness of the reference sample changes, the reference signal intensity of the reference sample also changes.
In some embodiments, said determining a reference linear relationship between signal intensity and thickness of said reference sample from said reference signal intensity and a reference thickness of said reference sample comprises the steps of:
step S10, obtaining the reference thickness of each of the reference samples in a reference sample set.
Here, the reference sample set includes at least two reference samples, each of the reference samples may be a pre-prepared sample having a reference thickness, and in the embodiment of the present application, the reference thickness of each of the reference samples is different.
Step S11, projecting the convergent electron beam generated by the scanning transmission electron microscope to the surface of each reference sample to obtain the reference signal intensity of each reference sample.
Here, after the convergent electron beam is projected onto the surface of each reference sample, the convergent electron beam generates a scattered electron beam under the action of each reference sample, and the intensity of the generated scattered electron beam is different due to the difference in thickness of each reference sample, so that the intensity of one reference signal can be obtained for each reference sample.
Step S12, determining the reference linear relationship between the signal intensity and the thickness of the reference sample according to a plurality of the reference signal intensities and the reference thickness of the reference sample corresponding to each of the reference signal intensities.
In the embodiment of the application, the reference thickness corresponding to each reference sample and the reference signal intensity corresponding to the reference sample are determined as a parameter pair; from at least two of the parameter pairs, a reference linear relationship between signal intensity and thickness of a reference sample can be determined.
In some embodiments, the reference sample has a wedge-shaped structure; the determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample comprises the following steps:
step S20, determining a plurality of reference thicknesses of the reference sample of the wedge structure at different positions of the wedge surface.
In the embodiment of the present application, since the reference sample has the wedge-shaped structure, the reference sample has different reference thicknesses at different positions of the wedge-shaped surface of the reference sample.
Step S21, projecting the convergent electron beam generated by the scanning transmission electron microscope to the different positions of the reference sample to obtain a plurality of reference signal intensities of the reference sample at the different positions.
Here, the convergent electron beam is projected to different positions on the wedge-shaped surface of the reference sample, the convergent electron beam generates a scattered electron beam under the action of the reference sample, and the reference sample at different positions on the wedge-shaped surface has different thicknesses, so that the intensities of the generated scattered electron beams are different, and thus, the reference signal intensity can be obtained corresponding to the reference samples at different positions.
Step S22, determining the reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensities and the reference thickness of the reference sample corresponding to each reference signal intensity.
In the embodiment of the application, the reference thickness and the reference signal intensity at the same position of the wedge-shaped surface of the reference sample are determined as a parameter pair; determining the reference linear relationship between signal intensity and thickness of a reference sample from a plurality of the parameter pairs.
In some embodiments, the reference sample has a plurality of step structures, each of the step structures having a step face and a vertical face perpendicular to the step face. The determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample comprises the following steps:
and step S30, determining the thickness of each step structure as the reference thickness, wherein the thickness of the step structure is the thickness of the reference sample below the step.
In the embodiment of the present application, since the reference sample has a step structure, the thickness of the reference sample under each step face of the reference sample is different.
And step S31, projecting the convergent electron beams generated by the scanning transmission electron microscope to different step surfaces of the reference sample to acquire a plurality of reference signal intensities of the reference sample under the different step surfaces.
Here, the convergent electron beam is projected onto each step surface of the reference sample, the convergent electron beam generates a scattered electron beam under the action of the reference sample, and the reference samples under different step surfaces have different thicknesses, so that the intensities of the generated scattered electron beams are different, and thus, the reference signal intensity can be obtained corresponding to the reference samples under different step surfaces.
Step S32, determining the reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensities and the reference thicknesses corresponding to the step surfaces corresponding to each reference signal intensity.
In the embodiment of the application, the reference thickness and the reference signal intensity corresponding to the same step surface of a reference sample are determined as a parameter pair; determining the reference linear relationship between signal intensity and thickness of a reference sample from a plurality of the parameter pairs.
And S103, acquiring the actual signal intensity of the sample to be detected through the scanning transmission electron microscope.
Here, the sample to be measured is a transmission electron microscope sample, and the sample to be measured includes a three-dimensional memory, a crystalline sample, or an amorphous sample. And the actual signal intensity is the intensity of a scattering signal generated after the sample to be detected is subjected to the action of the electron beam after the background is subtracted. In the embodiment of the present application, the sample to be measured and the reference sample are made of the same material.
In some embodiments, the high-angle dark field imaging probe is under preset probe parameters while obtaining the actual signal intensity of the sample to be measured; the preset probe parameters include: and presetting a background deduction parameter and a gain parameter. Wherein the preset background subtraction parameter is a parameter which can enable a background signal of the sample to be detected to be 0; the preset gain parameter comprises 10% -40%. In the embodiment of the application, when the actual signal intensity of the sample to be detected is obtained, the high-angle dark field image probe is under the preset probe parameters, so that the actual signal intensity of deducting the background signal intensity of the sample to be detected can be detected through the high-angle dark field image probe.
In some embodiments, the acquiring the actual signal intensity of the sample to be measured by the scanning transmission electron microscope includes the following steps:
and step S1031, projecting the converged electron beam generated by the scanning transmission electron microscope to the surface of the sample to be detected, so that the converged electron beam is scattered under the action of the sample to be detected, and a scattered electron beam is generated.
Step S1032, collecting the scattered electron beam through a high-angle dark field image probe of the scanning transmission electron microscope to obtain the actual signal intensity of the sample to be detected.
Here, the High-Angle Annular Dark Field (HAADF) probe is a probe for collecting High-Angle scattered electrons, and the High-Angle Dark Field image probe can be used for acquiring the actual signal intensity of the sample to be measured.
And S104, determining the thickness of the sample to be detected according to the reference linear relation and the actual signal intensity.
In the embodiment of the application, the reference sample and the sample to be detected are made of the same material, so that the thickness of the sample to be detected can be determined through the reference linear relation between the signal intensity and the thickness of the reference sample and the actual signal intensity of the sample to be detected.
In some embodiments, the determining the thickness of the sample to be tested according to the reference linear relationship and the actual signal intensity includes the following steps:
and S1041, determining the reference linear relation as a target linear relation between the signal intensity and the thickness of the sample to be detected.
Step S1042, taking the actual signal intensity as an independent variable of the target linear relation to perform linear calculation, and obtaining a dependent variable corresponding to the independent variable.
And S1043, determining the dependent variable as the thickness of the sample to be detected.
According to the method for determining the thickness of the sample, firstly, the reference signal intensity of a reference sample is obtained, and the reference linear relation between the signal intensity and the thickness of the reference sample is determined according to the reference signal intensity and the reference thickness of the reference sample; secondly, acquiring the actual signal intensity of the sample to be detected through a scanning transmission electron microscope; because the thickness of the sample to be detected can be determined through the reference linear relation of the reference sample and the actual signal intensity of the sample to be detected, the rapid and efficient characterization of the thickness of the sample to be detected can be realized.
Fig. 2 is a schematic flow chart of an alternative implementation of a method for determining a thickness of a sample, provided in an embodiment of the present application, the method is applied to a scanning transmission electron microscope, as shown in fig. 2, and the method includes the following steps:
step S201, verifying whether the stability of the machine of the scanning transmission electron microscope and the stability of the high-angle dark field image probe pass or not.
In the embodiment of the application, before the actual signal intensity of the sample to be detected is obtained through the scanning transmission electron microscope, whether the machine table and the high-angle dark field image probe of the scanning transmission electron microscope are stable or not needs to be verified, and the accurate actual signal intensity of the sample to be detected can be obtained only when the machine table and the high-angle dark field image probe of the scanning transmission electron microscope are sufficiently stable.
In some embodiments, the verifying the stability of the stage of the scanning transmission electron microscope and the high angle darkfield imaging probe comprises:
and step S2011, setting working parameters of a machine table of the scanning transmission electron microscope and verification parameters of the high-angle dark field image probe.
Here, the operating parameters include: high voltage, collection angle, camera length, condenser aperture, convergence angle, and beam current. The verification parameters are probe parameters of a high-angle dark field image probe, and the probe parameters comprise: a background subtraction parameter and a gain parameter.
Step S2012, periodically obtaining a plurality of background signal intensities and a plurality of actual signal intensities of the verification sample under the working parameter and the verification parameter.
In the embodiment of the application, the verification sample is a sample for performing stability verification on the machine table and the high-angle dark field image probe. The background signal intensity is the signal intensity of the background signal of the validation sample. The actual signal intensity is the signal intensity after subtraction of background signal from the validation sample.
Here, after setting the operating parameters of the stage of the scanning transmission electron microscope and the verification parameters of the high-angle dark field image probe, under the scanning transmission electron microscope, a plurality of background signal intensities and a plurality of actual signal intensities of the verification sample are periodically obtained, and for example, the plurality of background signal intensities and the plurality of actual signal intensities may be obtained in a cycle of 12 hours, 24 hours, or 30 hours.
And S2013, verifying the stability of the machine table of the scanning transmission electron microscope and the high-angle dark field image probe by verifying the multiple background signal intensities and the multiple actual signal intensities of the sample.
In some embodiments, the verifying the stability of the stage of the scanning transmission electron microscope and the high-angle darkfield imaging probe by the verifying the plurality of background signal intensities and the plurality of actual signal intensities of the sample comprises:
step S40, obtaining a first standard deviation between a plurality of background signal intensities of the validation sample.
Here, after the plurality of background signal intensities of the verification sample are acquired through the above step S2012, the average of the plurality of background signal intensities is taken as an expected value to obtain a first standard deviation between the plurality of background signal intensities.
And step S41, acquiring a second standard deviation among a plurality of actual signal intensities of the verification sample.
Here, after the plurality of actual signal intensities of the verification sample are acquired through the above-described step S2012, a mean value of the plurality of actual signal intensities is taken as an expected value to obtain a second standard deviation between the plurality of actual signal intensities.
Step S42, determining whether the first standard deviation is smaller than a first preset standard deviation, and determining whether the second standard deviation is smaller than a second preset standard deviation.
In some embodiments, when the first standard deviation is smaller than the first preset standard deviation and the second standard deviation is smaller than the second preset standard deviation, step S43 is performed; when the first standard deviation is greater than or equal to the first preset standard deviation, or when the second standard deviation is greater than or equal to the second preset standard deviation, step S44 is performed. Here, the first preset standard deviation is the same as or different from the second preset standard deviation, and in the embodiment of the present application, the sizes of the deviations of the first preset standard deviation and the second preset standard are not limited.
And step S43, determining that the stability of the machine platform of the scanning transmission electron microscope and the high-angle dark field image probe passes verification.
And step S44, determining that the stability verification of the machine table of the scanning transmission electron microscope and the high-angle dark field image probe is not passed.
In some embodiments, when the stability verification of the stage of the scanning transmission electron microscope and the high-angle dark field image probe passes, step S203 is performed; when the stability verification of the stage of the scanning transmission electron microscope and the high-angle dark field image probe does not pass, step S202 is performed.
And S202, adjusting working parameters of a machine table of the scanning transmission electron microscope and verification parameters of the high-angle dark field image probe, and continuing to verify.
Here, when the stability verification of the machine table and the high-angle dark field image probe of the scanning transmission electron microscope does not pass, the working parameters of the machine table and the verification parameters of the high-angle dark field image probe need to be readjusted, and the stability of the machine table and the high-angle dark field image probe of the scanning transmission electron microscope is continuously verified again under the adjusted working parameters and the adjusted verification parameters until the verification passes. In the embodiment of the present application, the process of re-verification is the same as the verification process described in step S301.
And step S203, acquiring the actual signal intensity of the sample to be detected.
The implementation process and implemented functions of step S203 are the same as those of step S103 in the above-described embodiment.
And S204, acquiring a target linear relation between the signal intensity and the thickness of the sample to be detected.
In some embodiments, reference samples of different materials with known thicknesses can be obtained in advance, the signal intensity of each reference sample is obtained, and a reference linear relation between the signal intensity and the thickness of each reference sample is determined through the signal intensity of each reference sample and the corresponding thickness; and a mapping list between the reference samples and the corresponding reference linear relations is established. When the thickness of the sample to be measured is measured subsequently, the reference linear relation of the reference sample corresponding to the material of the sample to be measured can be determined in a pre-established mapping list in a table look-up mode, and the determined reference linear relation is used as the target linear relation of the sample to be measured.
And S205, determining the thickness of the sample to be detected according to the target linear relation and the actual signal intensity.
The embodiment of the application provides a method for determining the thickness of a sample, which comprises the steps of firstly, verifying the stability of a machine table of a scanning transmission electron microscope and a high-angle dark field image probe, and when the stability verification of the machine table of the scanning transmission electron microscope and the stability verification of the high-angle dark field image probe pass, obtaining the signal intensity of a sample to be detected and the target linear relation between the signal intensity and the thickness of the sample to be detected, thus, the thickness of the sample to be detected can be rapidly and efficiently determined through the target linear relation and the signal intensity of the sample to be detected, and the efficient representation of the thickness of the sample to be detected is realized.
Fig. 3A is a schematic flow chart of an alternative implementation of the method for determining the thickness of the sample, which is provided by the embodiment of the present application, and is applied to a Scanning Transmission Electron microscope, as shown in fig. 3A, a process for characterizing the thickness of the sample based on the Scanning Transmission Electron microscope and a High-Angle Dark-Field image probe (STEM-HAADF) provided by the embodiment of the present application includes the following steps:
and S301, demonstrating the stability of the STEM machine and the HAADF probe.
In the embodiment of the present application, if it is desired to characterize the sample thickness based on STEM-HAADF, the STEM stage and HAADF probe must be very stable, otherwise the sample thickness characterization cannot be achieved.
Here, when the stabilities of the STEM stage and the HAADF probe are verified, firstly, the TEM stage and the HAADF probe are set according to the setting parameters of the STEM stage and the HAADF probe in the following table 1, and secondly, the stability verification is performed using the verification sample under the set STEM stage and the set HAADF probe.
TABLE 1 STEM Table and HAADF Probe setup parameters
As shown in fig. 3B, for the TEM image of the validation sample provided in the embodiment of the present application, it can be seen that the Resolution (Resolution) of the TEM image of the validation sample is 1024 pixels by 1024 pixels, the Dwell time (Dwell time) is 5 μ s, and the size of the Region of Interest (ROI) of the validation sample is about 13 μm by 13 μm.
Table 2 below shows test data of the verification sample provided in this embodiment, in the process of performing stability verification on the STEM machine and the HAADF probe, the total signal intensity and the background signal intensity of the verification sample are obtained every day in units of days and in a verification period of one week, and the actual signal intensity of the verification sample is calculated according to the total signal intensity and the background signal intensity. The stability of the TEM stage and HAADF probe was verified by calculating the Standard Deviation (STD) of the total signal strength, background signal strength, and actual signal strength, respectively.
Table 2 validation of test data for samples
As can be seen from the test results of table 2, the rate of change caused by the standard deviation of the total signal intensity of the verification sample was 0.3%, the rate of change caused by the standard deviation of the background signal intensity of the verification sample was 0.1%, the rate of change caused by the standard deviation of the actual signal intensity of the verification sample was 0.4%, and the difference of the signal intensities (Counts) caused by the stage (Metrios) and the HAADF probe was less than 1%, and thus it can be determined that the stabilities of the stage and the HAADF probe are very good.
And step S302, searching the working principle of the HAADF probe and determining the parameters of the probe.
In the embodiment of the present application, the probe parameters include an Offset parameter (Offset) and a Gain parameter (Gain). Next, the working principle of the HAADF probe is searched for with reference to fig. 3C to 3E.
Fig. 3C is a graph of the relationship between the signal intensity and the background subtraction parameter provided in the present embodiment, where the background subtraction parameter of the HAADF probe is set as the independent variable and the signal intensity of the sample is the dependent variable when the gain parameter is 0, and it can be seen from fig. 3C that the background subtraction parameter and the signal intensity of the sample are in a linear relationship. Assuming that x is the background subtraction parameter and y is the signal intensity of the sample, the background subtraction parameter and the signal intensity of the sample satisfy a linear relationship of fitting y-412299 x-174219, and the fitting determination coefficient R 21. Fig. 3D and 3E are graphs showing the relationship between the signal intensity and the gain parameter provided in the embodiment of the present application, and it can be seen from fig. 3D and 3E that when the background subtraction parameter is 42.269% and the gain parameter is 0, the signal intensity of the sample is also 0; when the background subtraction parameter is 45% and the gain parameter is 0, the signal intensity of the sample is Δ y-412299 × 45% -174219-11243, and therefore, the mechanism of the HAADF probe is to perform background subtraction and then gain is obtained.
The following two conclusions can be obtained through the exploration process:
first, neglecting the influence of noise, reading the signal intensity (n)read) With actual signal strength (n)in) The relationship between them is as follows: n isread＝nin*Gain+Offset。
Secondly, in order to quantitatively characterize the thickness of the sample, Offset needs to be set to a constant value with background signal intensity of 0, and Gain needs to be set to a proper constant value. The probe data of each manufacturer are different and are not unified here. For the HAADF probe of FEI, Offset is approximately 42%, and Gain is usually around 10% -40% appropriate.
Step S303, establishing a relation between the signal intensity and the thickness.
To establish the relationship between signal intensity and sample thickness, a reference sample with a known sample thickness is required, for which a 45 ° wedge-shaped reference sample is prepared. The relation between the signal intensity and the thickness of the reference sample in the linear thickness area can be obtained by measuring the signal intensity of the wedge-shaped reference sample.
In the embodiment of the present application, when measuring the signal intensity of the wedge-shaped reference sample, the TEM machine and the HAADF probe need to be set according to the setting parameters of the STEM machine and the HAADF probe in the following table 3, so as to ensure that the accurate signal intensity of the wedge-shaped reference sample is obtained.
TABLE 3 STEM Table and HAADF Probe setup parameters
In the following, a three-dimensional memory sample is taken as an example, and by practical characterization, it can be found that under set conditions, a linear region of silicon oxide is about 1 μm, tungsten (W) is about 70nm, and a positive correlation region of tungsten is about 200 nm. Considering that W is essentially the largest atomic number species in all materials of a three-dimensional flash memory (3D NAND) sample, TEM samples generally do not have pure W samples greater than 200 nm. Thus, this parameter can cover all common 3D NAND TEM samples.
Fig. 3F is a graph of signal intensity versus Thickness for the oxide of the wedge-shaped sample provided in the examples of the present application, and as shown in fig. 3F, as the Thickness (THK) of the Oxide (OX) increases, the signal intensity of OX also increases. Assuming that the thickness of OX is used as an independent variable x and the signal intensity of OX in the wedge-shaped sample is used as a dependent variable y, it can be seen that the thickness of OX and the signal intensity of OX satisfy a linear relation that y is 16.486x and the determination coefficient R of fitting20.9984, i.e. OX thickness Tox Counts/16.494 (all samples can be covered). Fig. 3G is a graph of the relationship between the signal intensity and the thickness of the wedge-shaped tungsten sample provided in the embodiment of the present application, and as shown in fig. 3G, the signal intensity of W continuously increases as the thickness of W continuously increases. Suppose thatWhen the thickness of W is used as an independent variable x and the signal intensity of the wedge-shaped sample W is used as a dependent variable y, the thickness of W and the signal intensity of W satisfy a linear relation that y is 502.51x, and the determination coefficient R of the fitting2Thickness T of 0.9969, i.e. WWAs can be seen from fig. 3G, the thickness THK of W is less than 75 nm.
From the above analysis, it can be seen that there is a linear relationship between the thickness of the sample and the signal intensity of the sample as shown in the following equation (1):
wherein THK is the thickness of the reference sample; NetCounts is the actual signal intensity of the reference sample; k is the relationship between the thickness of the reference sample and the actual signal intensity of the reference sample. In the embodiment of the present application, since the thickness of the reference sample is known, and the actual signal intensity of the reference sample can be measured by STEM, the K value can be determined in advance.
And step S304, calculating the thickness of the sample to be measured according to the relation between the signal intensity and the thickness.
Here, the sample to be measured and the reference sample are composed of the same material, and therefore, the thickness of the sample to be measured can be inferred from the relationship between the signal intensity and the thickness of the reference sample.
The STEM-HAADF signal intensity of a sample homogenizing area is obtained under the set instrument state and the probe state, and the thickness of a sample to be measured in the area is calculated according to the measured conversion coefficient K value.
In the embodiment of the application, the precision of the thickness characterization of the sample to be tested is found to be approximately 3% through repeated tests. And because the diffraction contrast of the crystal almost disappears under a high collection angle, the thickness determination method provided by the embodiment of the application can realize thickness characterization of crystal substances such as single crystals, polycrystals and the like.
The following takes the channel hole of the three-dimensional memory as an example to illustrate the beneficial effects of precisely controlling the thickness of the sample.
FIG. 3H is a graph showing a spectrum of a change in the amount of chloride ion signal in a channel hole when the thickness of the sample is not clamped according to an embodiment of the present disclosure, as shown in FIG. 3H, when the thickness of the sample OX is 75nm, the intensity of the chloride ion signal in the sample OX is detected to be about 1200 by the HAADF probe; when the thickness of the sample OX is 100nm, the signal intensity of chloride ions in the sample OX is detected to be about 1600 by the HAADF probe; the intensity of the signal of chloride ions in the sample OX was detected by the HAADF probe at a thickness of 200nm, which was about 3300, and therefore the amount of signal of chloride ions in the Channel holes (channels, CH) varied greatly when the thickness of the sample OX was not seized. Fig. 3I is a spectrum of the signal amount variation of chloride ions in the channel hole after the thickness of the sample is clamped according to the embodiment of the present application, and as shown in fig. 3I, when the thicknesses of all three samples OX are 75nm, the signal intensity of chloride ions in the sample OX is detected by the HAADF probe to be about 1200, so that the repeatability of the signal amount of chloride ions in the channel hole is very good after the thickness of the sample OX is clamped.
The beneficial effect of precisely controlling the thickness of the sample will be described below by taking the Energy Dispersive X-Ray Spectroscopy (EDX) analysis of the Ovonic Threshold Switch material (OTS) as an example.
Here, the content of Germanium (Ge) in OTS samples was quantitatively compared by Trident EDX. Fig. 3J is a distribution diagram of the germanium content in the OTS before the thickness of the sample OTS is seized, as shown in fig. 3J, and the standard deviation 3 σ of the distribution of the germanium content in the sample OTS is greater than 1% before the thickness of the sample OTS is seized by STEM. Fig. 3K is a distribution diagram of the germanium content in the OTS after the thickness of the OTS sample is controlled, as shown in fig. 3K, after the thickness of the OTS sample is controlled by STEM, a standard deviation 3 σ of the distribution of the germanium content in the OTS sample is less than 1%, and it can be seen that the degree of dispersion of the germanium content in the OTS sample is greatly reduced after the thickness of the OTS sample is controlled.
According to the method for determining the thickness of the sample, thickness characterization of an inelastic scattering mean free path unknown substance, a crystalline substance and a high atomic number substance can be achieved rapidly, measurement and EDX quantification accuracy are optimized, and the method for determining the thickness of the sample can be used for characterizing the thicknesses of various samples based on a TEM without installing a GIF, so that the characterization cost is greatly reduced. In addition, the end point characterization of the sample can be realized based on the thickness information determined by the sample thickness determination method provided by the embodiment of the application.
In the several embodiments provided in the present application, it should be understood that the disclosed apparatus and method may be implemented in a non-target manner. The above-described device embodiments are merely illustrative, for example, the division of the unit is only a logical functional division, and there may be other division ways in actual implementation, such as: multiple units or components may be combined, or may be integrated into another system, or some features may be omitted, or not implemented. Further, the coupling, or direct coupling, of the various elements shown or discussed to each other may be indirect via some interface, device, or unit, and may be electrical, mechanical, or non-target.
The units described as separate parts may or may not be physically separate, and parts displayed as units may or may not be physical units, may be located in one place, or may be distributed on a plurality of units; some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The features disclosed in the several method or apparatus embodiments provided in the present application may be combined arbitrarily, without conflict, to arrive at new method embodiments or apparatus embodiments.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (11)
1. A method for determining the thickness of a sample, the method being applied to a scanning transmission electron microscope, the method comprising:
acquiring the reference signal intensity of a reference sample;
determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample;
acquiring the actual signal intensity of a sample to be detected through the scanning transmission electron microscope, wherein the sample to be detected and the reference sample are made of the same material;
and determining the thickness of the sample to be detected according to the reference linear relation and the actual signal intensity.
2. The method of claim 1, wherein obtaining the actual signal intensity of the sample to be tested by the scanning transmission electron microscope comprises:
projecting the convergent electron beam generated by the scanning transmission electron microscope to the surface of the sample to be detected so that the convergent electron beam is scattered under the action of the sample to be detected to generate a scattered electron beam;
and collecting the scattered electron beams through a high-angle dark field image probe of the scanning transmission electron microscope to obtain the actual signal intensity of the sample to be detected.
3. The method of claim 1, wherein determining the reference linear relationship between the signal intensity and the thickness of the reference sample from the reference signal intensity and the reference thickness of the reference sample comprises:
obtaining the reference thickness for each of the reference samples in a set of reference samples;
projecting a converging electron beam generated by the scanning transmission electron microscope onto the surface of each of the reference samples to obtain the reference signal intensity of each of the reference samples;
determining the reference linear relationship between signal intensity and thickness of the reference sample by a plurality of the reference signal intensities and a reference thickness of the reference sample corresponding to each of the reference signal intensities.
4. The method of claim 1, wherein the reference sample has a wedge-shaped structure;
the determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample comprises:
determining a plurality of said reference thicknesses of a reference sample of said wedge-shaped structure at different positions of the wedge-shaped surface;
projecting a converging electron beam generated by the scanning transmission electron microscope at the different locations of the reference sample to obtain a plurality of reference signal intensities of the reference sample at the different locations;
and determining the reference linear relation between the signal intensity and the thickness of the reference sample according to a plurality of reference signal intensities and the reference thickness of the reference sample corresponding to each reference signal intensity.
5. The method of claim 1, wherein the reference sample has a plurality of step structures, each of the step structures having a step face and a vertical face perpendicular to the step face;
the determining a reference linear relationship between the signal intensity and the thickness of the reference sample according to the reference signal intensity and the reference thickness of the reference sample comprises:
determining the thickness of each step structure as the reference thickness, wherein the thickness of the step structure is the thickness of the reference sample below the step surface;
projecting the convergent electron beams generated by the scanning transmission electron microscope to different step surfaces of the reference sample to acquire a plurality of reference signal intensities of the reference sample under the different step surfaces;
determining the reference linear relationship between the signal intensity and the thickness of the reference sample by a plurality of the reference signal intensities and the reference thicknesses corresponding to the step faces corresponding to each of the reference signal intensities.
6. The method of claim 1, wherein determining the thickness of the sample to be tested from the reference linear relationship and the actual signal intensity comprises:
determining the reference linear relation as a target linear relation between the signal intensity and the thickness of the sample to be detected;
taking the actual signal intensity as an independent variable of the target linear relation to perform linear calculation to obtain a dependent variable corresponding to the independent variable;
and determining the dependent variable as the thickness of the sample to be detected.
7. The method of claim 1, further comprising:
and verifying the stability of the machine table of the scanning transmission electron microscope and the high-angle dark field image probe.
And when the stability verification of the machine table and the high-angle dark field image probe passes, acquiring the actual signal intensity of the sample to be detected.
8. The method of claim 7, wherein verifying stability of the stage of the scanning transmission electron microscope and the high angle darkfield imaging probe comprises:
setting working parameters of a machine table of the scanning transmission electron microscope and verification parameters of the high-angle dark field image probe;
periodically acquiring a plurality of background signal intensities and a plurality of actual signal intensities of the verification sample under the working parameters and the verification parameters;
and verifying the stability of the machine of the scanning transmission electron microscope and the stability of the high-angle dark field image probe by verifying the plurality of background signal intensities and the plurality of actual signal intensities of the sample.
9. The method of claim 8, wherein verifying the stability of the stage of the scanning transmission electron microscope and the high angle darkfield imaging probe by the verifying the plurality of background signal intensities and the plurality of actual signal intensities of the sample comprises:
obtaining a first standard deviation between a plurality of background signal intensities for the validation sample;
obtaining a second standard deviation between a plurality of actual signal intensities for the validation sample;
when the first standard deviation is smaller than a first preset standard deviation and the second standard deviation is smaller than a second preset standard deviation, determining that the stability verification of a machine table of the scanning transmission electron microscope and the stability verification of the high-angle dark field image probe are passed;
and when the first standard deviation is greater than or equal to the first preset standard deviation or when the second standard deviation is greater than or equal to the second preset standard deviation, determining that the stability verification of the machine table of the scanning transmission electron microscope and the high-angle dark field image probe fails.
10. The method of claim 2, wherein the high angle dark field imaging probe is at a preset probe parameter while acquiring the actual signal intensity of the sample to be tested;
the preset probe parameters include: presetting a background deduction parameter and a gain parameter;
wherein the preset background subtraction parameter is a parameter which can enable a background signal of the sample to be detected to be 0; the preset gain parameter comprises 10% -40%.
11. The method of claim 1, wherein the sample to be tested comprises a three-dimensional memory, a crystalline sample, or an amorphous sample, and wherein the sample to be tested is a transmission electron microscope sample.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110296956.0A CN113008171A (en) | 2021-03-19 | 2021-03-19 | Method for determining thickness of sample |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110296956.0A CN113008171A (en) | 2021-03-19 | 2021-03-19 | Method for determining thickness of sample |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113008171A true CN113008171A (en) | 2021-06-22 |
Family
ID=76403395
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110296956.0A Pending CN113008171A (en) | 2021-03-19 | 2021-03-19 | Method for determining thickness of sample |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113008171A (en) |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656811A (en) * | 1994-06-14 | 1997-08-12 | Hitachi, Ltd. | Method for making specimen and apparatus thereof |
| CN101137889A (en) * | 2005-01-07 | 2008-03-05 | 精工电子纳米科技有限公司 | Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample |
| CN102272878A (en) * | 2008-10-31 | 2011-12-07 | Fei公司 | Measurement and endpointing of sample thickness |
| CN102459428A (en) * | 2009-05-22 | 2012-05-16 | 埃克森美孚石油公司 | Film with a metal receiving layer having high metal adhesion and method of making same |
| CN104769390A (en) * | 2012-10-26 | 2015-07-08 | Nanocms株式会社 | Method and device for measuring thickness of thin film layer using x-rays |
| CN110366461A (en) * | 2017-03-31 | 2019-10-22 | 富士胶片株式会社 | The flat particle of golden coated with silver, the flat particle dispersion of golden coated with silver and its manufacturing method, coated film and antireflection optical component |
| CN110770537A (en) * | 2017-06-13 | 2020-02-07 | 株式会社日立高新技术 | Charged particle beam device and method for measuring thickness of sample |
| CN110986802A (en) * | 2019-12-14 | 2020-04-10 | 燕山大学 | Method for measuring thickness of transmission electron microscope sample |
| CN111344602A (en) * | 2018-09-25 | 2020-06-26 | Ｊｘ金属株式会社 | Radiation detection element and method for manufacturing radiation detection element |
-
2021
- 2021-03-19 CN CN202110296956.0A patent/CN113008171A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5656811A (en) * | 1994-06-14 | 1997-08-12 | Hitachi, Ltd. | Method for making specimen and apparatus thereof |
| CN101137889A (en) * | 2005-01-07 | 2008-03-05 | 精工电子纳米科技有限公司 | Method and apparatus of measuring thin film sample and method and apparatus of fabricating thin film sample |
| CN102272878A (en) * | 2008-10-31 | 2011-12-07 | Fei公司 | Measurement and endpointing of sample thickness |
| CN102459428A (en) * | 2009-05-22 | 2012-05-16 | 埃克森美孚石油公司 | Film with a metal receiving layer having high metal adhesion and method of making same |
| CN104769390A (en) * | 2012-10-26 | 2015-07-08 | Nanocms株式会社 | Method and device for measuring thickness of thin film layer using x-rays |
| CN110366461A (en) * | 2017-03-31 | 2019-10-22 | 富士胶片株式会社 | The flat particle of golden coated with silver, the flat particle dispersion of golden coated with silver and its manufacturing method, coated film and antireflection optical component |
| CN110770537A (en) * | 2017-06-13 | 2020-02-07 | 株式会社日立高新技术 | Charged particle beam device and method for measuring thickness of sample |
| CN111344602A (en) * | 2018-09-25 | 2020-06-26 | Ｊｘ金属株式会社 | Radiation detection element and method for manufacturing radiation detection element |
| CN110986802A (en) * | 2019-12-14 | 2020-04-10 | 燕山大学 | Method for measuring thickness of transmission electron microscope sample |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9184025B2 (en) | Measurement and endpointing of sample thickness | |
| JP4987486B2 (en) | Thin film sample measurement method and apparatus, and thin film sample preparation method and apparatus | |
| JP3732738B2 (en) | Semiconductor device inspection equipment | |
| US9704689B2 (en) | Method of reducing the thickness of a target sample | |
| US8080790B2 (en) | Scanning electron microscope | |
| JP2001202911A (en) | Beam evaluation | |
| JP2003249186A (en) | Observation method and observation equipment by scanning transmission electron microscope | |
| JP5187810B2 (en) | Film thickness measuring method and sample preparation method, film thickness measuring apparatus and sample preparation apparatus | |
| JP2004022318A (en) | Transmission electron microscope and sample analysis method | |
| JP2017522571A (en) | Method for measuring the mass thickness of a target sample for an electron microscope | |
| CN113008171A (en) | Method for determining thickness of sample | |
| KR100955434B1 (en) | Nondestructive characterization of thin films using measured basis spectra and/or based on acquired spectrum | |
| Browning et al. | Atomic‐resolution electron energy‐loss spectroscopy in the scanning transmission electron microscope | |
| JP6044704B2 (en) | SAMPLE MEASUREMENT DEVICE, SAMPLE MEASUREMENT METHOD, SEMICONDUCTOR DEVICE EVALUATION METHOD, AND COMPUTER PROGRAM | |
| TW202001239A (en) | Inspection system and inspection method to qualify semiconductor structures | |
| US20110284759A1 (en) | Method for adjusting optical axis of charged particle radiation and charged particle radiation device | |
| JP4095510B2 (en) | Surface potential measurement method and sample observation method | |
| US9595420B2 (en) | Method for preparing lamella | |
| US20060278823A1 (en) | Apparatus, method, and computer program product for deconvolution analysis | |
| Hrnčíř et al. | How Xe and Ga FIB differ in inducing lateral damage on TEM samples | |
| JP2007178341A (en) | Spectral analyzer of ion scattering | |
| US6519542B1 (en) | Method of testing an unknown sample with an analytical tool | |
| CZ2012225A3 (en) | Device with a beam of charged particles and method of measuring thickness of thin lamellas | |
| Wang et al. | Application of SIMS for the characterization of Nitrogen in TaN film | |
| Li et al. | Differential phase contrast (DPC) mapping electric fields: Optimising experimental conditions |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20210622 |