CN112993749A - 可调控光学模态的雷射结构的制造方法 - Google Patents
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Abstract
一种可调控光学模态的雷射结构的制造方法,是在基板上以蒸镀、溅镀或磊晶法依序成长第一分布式布拉格反射镜(DBR)、发光层、第二分布式布拉格反射镜以及第三分布式布拉格反射镜,该第三分布式布拉格反射镜由单层或多层介电质组成,并在该第三分布式布拉格反射镜中央或周围区域经选择性蚀刻出一开口(Aperture)结构。本发明将该开口结构实现于整体雷射结构顶端的第三分布式布拉格反射镜的介电质结构中,可透过控制开口的直径或面积以及介电质晶层数目以调控雷射结构所产生的光学模态,进而改变发散角度,令其发散角度变小(小于15度),可使得远场发光呈现均匀的强度分布,以及增大在光纤中传输距离。
Description
技术领域
本发明有关于一种可调控光学模态的激光结构的制造方法,尤指涉及一种将开口(Aperture)结构实现于整体雷射结构顶端的分布式布拉格反射镜(Distributed BraggReflector, DBR)的介电质晶层结构的制造方法。
背景技术
近年来人工智能(AI)与自驾车产业正快速发展中,由于红外波长(700-1600nm)的垂直共振腔面射型雷射(Vertical-Cavity Surface-Emitting Lasers, VCSELs)具有:(1)高速;(2)高功率转换效率(Power Conversion Efficiency,PCE);(3)同调性(Coherency);(4)面射发光,(5)可以形成大功率距阵;以及(6)芯片生产与封装容易、制造成本低的特点。因此,可大量应用于AI与自驾车的传感系统中。但是一般现有的VCSELs为多模态发光,远场(Far-field)呈现周边高中央低不均匀的强度(Intensity)分布,为了改善修正该远场发光强度不均匀的现象,在封装上需要增加二次光学透镜,导致成本增加、制造困难与良率下降等问题;另外,一般现有的VCSELs发光角是25度左右,对于需要小角度(小于15度)的传感光源与照明应用也需要增加二次光学透镜,同样地导致成本增加、制造困难与良率下降等问题。
发明内容
本发明的主要目的在于,克服已知技术所遭遇的上述问题,并提供一种将开口结构实现于整体雷射结构顶端的第三分布式布拉格反射镜的介电质结构中,可透过控制开口的直径或面积以及介电质晶层数目以调控雷射结构所产生的光学模态。
本发明的另一目的在于,提供一种具有可以调控光学模态的分布式布拉格反射镜,使其远场发光强度均匀,以及增大在光纤中传输距离的可调控光学模态的雷射结构的制造方法。
本发明的另一目的在于,提供一种具有可以调控光学模态的分布式布拉格反射镜,使其发散角度变小(小于15度)的可调控光学模态的雷射结构的制造方法。
为达以上目的,本发明采用的技术方案是,一种可调控光学模态的雷射结构的制造方法,其至少包含下列步骤:步骤一:在一基板上以蒸镀、溅镀或磊晶法成长一第一分布式布拉格反射镜(Distributed Bragg Reflector, DBR);步骤二:在该第一分布式布拉格反射镜上以蒸镀、溅镀或磊晶法成长一发光层(Active Layer);步骤三:在该发光层上以蒸镀、溅镀或磊晶法成长一第二分布式布拉格反射镜;以及步骤四:在该第二分布式布拉格反射镜上以蒸镀、溅镀或磊晶法成长单层或多层介电质以形成一第三分布式布拉格反射镜,并在该第三分布式布拉格反射镜中央或周围区域经选择性蚀刻出一开口(Aperture)结构。
于本发明上述实施例中,该基板为半导体基板。
于本发明上述实施例中,该步骤四形成的该第三分布式布拉格反射镜的介电质晶层数目介于1-20之间。
于本发明上述实施例中,该步骤四在该第三分布式布拉格反射镜中央区域被选择性蚀刻的开口结构的直径范围介于2-15μm之间。
于本发明上述实施例中,该第三分布式布拉格反射镜的介电质晶层由氮化硅(SiNx)、氧化硅(SiO2)、氧化铝(AlOx)、氧化锌(ZnO)或氧化镁(MgO)所组成或以上任意混合组成。
附图说明
图1是本发明的制造流程示意图。
图2是本发明可调控光学模态的雷射结构剖面示意图。
标号对照:
基板11
第一分布式布拉格反射镜12
发光层13
第二分布式布拉格反射镜14
第三分布式布拉格反射镜15
开口结构151
步骤一s11
步骤二s12
步骤三s13
步骤四s14。
具体实施方式
请参阅图1及图2所示,分别为本发明的制造流程示意图、以及本发明可调控光学模态的雷射结构剖面示意图。如图所示:本发明为一种可调控光学模态的雷射结构的制造方法,其至少包含下列步骤:
步骤一s11:在一基板11上以蒸镀、溅镀或磊晶法成长一第一分布式布拉格反射镜(Distributed Bragg Reflector, DBR)12。其中,该基板11为半导体基板。
步骤二s12:在该第一分布式布拉格反射镜12上以蒸镀、溅镀或磊晶法成长一发光层(Active Layer)13。
步骤三s13:在该发光层13上以蒸镀、溅镀或磊晶法成长一第二分布式布拉格反射镜14。
步骤四s14:在该第二分布式布拉格反射镜14上以蒸镀、溅镀或磊晶法成长单层或多层介电质形成一第三分布式布拉格反射镜15,并在该第三分布式布拉格反射镜15中央或周围区域经选择性蚀刻出一开口(Aperture)结构151。如是,藉由上述揭露的流程构成一全新的可调控光学模态的雷射结构的制造方法。
于一较佳实施例中,上述第三分布式布拉格反射镜15的介电质晶层数目介于1-20之间;并且,该第三分布式布拉格反射镜15中央区域的开口结构151的直径范围介于2-15μm之间。其中,该第三分布式布拉格反射镜15的介电质晶层由氮化硅(SiNx)、氧化硅(SiO2)、氧化铝(AlOx)、氧化锌(ZnO)、或氧化镁(MgO)所组成或以上任意混合组成。
当运用时,经由本发明将开口结构151实现于整体雷射结构顶端的第三分布式布拉格反射镜15的介电质结构中,可透过控制开口的直径或面积以及介电质晶层数目以调控雷射结构所产生的光学模态,进而改变发散角度,令其发散角度变小(小于15度),可使得远场(Far-field)发光呈现均匀的强度(Intensity)分布,以及增大在光纤中传输距离。并且,相较于传统锌扩散需要加热可能会对材料造成劣化,或产生一些生产上的麻烦因素而无法加以量产而言,本发明透过上述开口结构151即可抑制结构外面的光学模态,并可修正改善传统远场呈现周边高中央低的发光强度不均匀分布现象,达到结构设计合理,装配简单,易于生量制造的功效,真正实现可量产性且具成本效益的雷射结构。
综上所述,本发明的一种可调控光学模态的雷射结构的制造方法,可有效改善现有技术的种种缺点,将开口结构实现于整体雷射结构顶端的第三分布式布拉格反射镜的介电质结构中,藉此可透过控制开口的直径或面积以及介电质晶层数目以调控雷射结构所产生的光学模态,达到改变发散角度,令其发散角度变小(小于15度),可使得远场发光呈现均匀的强度分布,以及增大在光纤中传输距离,进而使本发明的产生能更进步、更实用、更符合使用者所须,确已符合发明专利申请的要件,依法提出专利申请。
但以上所述,仅为本发明的较佳实施例而已,当不能以此限定本发明实施的范围。故,凡依本发明申请专利范围及发明说明书内容所作的简单的等效变化与修饰,皆应仍属本发明专利涵盖的范围内。
Claims (5)
1.一种可调控光学模态的雷射结构的制造方法,其至少包含下列步骤:
步骤一:在一基板上以蒸镀、溅镀或磊晶法成长一第一分布式布拉格反射镜;
步骤二:在该第一分布式布拉格反射镜上以蒸镀、溅镀或磊晶法成长一发光层;
步骤三:在该发光层上以蒸镀、溅镀或磊晶法成长一第二分布式布拉格反射镜;以及
步骤四:在该第二分布式布拉格反射镜上以蒸镀、溅镀或磊晶法成长单层或多层介电质以形成一第三分布式布拉格反射镜,并在该第三分布式布拉格反射镜中央或周围区域经选择性蚀刻出一开口结构。
2.如权利要求1所述的可调控光学模态的雷射结构的制造方法,其特征在于,所述基板为半导体基板。
3.如权利要求1所述的可调控光学模态的雷射结构的制造方法,其特征在于,所述步骤四形成的该第三分布式布拉格反射镜的介电质晶层数目介于1-20之间。
4.如权利要求1所述的可调控光学模态的雷射结构的制造方法,其特征在于,所述步骤四在该第三分布式布拉格反射镜中央区域被选择性蚀刻的开口结构的直径范围介于2-15μm之间。
5.如权利要求1所述的可调控光学模态的雷射结构的制造方法,其特征在于,所述第三分布式布拉格反射镜的介电质晶层由氮化硅、氧化硅、氧化铝、氧化锌、或氧化镁的一种或几种组成。
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US6680963B2 (en) * | 2001-07-24 | 2004-01-20 | Lux Net Corporation | Vertical-cavity surface emitting laser utilizing a reversed biased diode for improved current confinement |
US6553053B2 (en) * | 2001-07-25 | 2003-04-22 | Luxnet Corporation | Vertical cavity surface emitting laser having improved light output function |
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2019
- 2019-12-13 TW TW108145810A patent/TWI755662B/zh active
-
2020
- 2020-06-18 US US16/904,769 patent/US20210184433A1/en not_active Abandoned
- 2020-06-23 CN CN202010577650.8A patent/CN112993749A/zh active Pending
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TW529211B (en) * | 2001-03-07 | 2003-04-21 | Ying-Jay Yang | Device structure and method for fabricating semiconductor lasers |
US20070014324A1 (en) * | 2005-07-04 | 2007-01-18 | Osamu Maeda | Vertical cavity surface emitting laser |
CN101651287A (zh) * | 2008-08-14 | 2010-02-17 | 索尼株式会社 | 垂直腔面发射激光器 |
CN110867726A (zh) * | 2019-11-27 | 2020-03-06 | 长春理工大学 | 一种偏振稳定的垂直腔面发射激光器结构 |
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TWI755662B (zh) | 2022-02-21 |
TW202123568A (zh) | 2021-06-16 |
US20210184433A1 (en) | 2021-06-17 |
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