CN112993082A - 一种石墨舟降温方法 - Google Patents
一种石墨舟降温方法 Download PDFInfo
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- CN112993082A CN112993082A CN202011579772.7A CN202011579772A CN112993082A CN 112993082 A CN112993082 A CN 112993082A CN 202011579772 A CN202011579772 A CN 202011579772A CN 112993082 A CN112993082 A CN 112993082A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 16
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 16
- 239000010439 graphite Substances 0.000 title claims abstract description 16
- 238000001816 cooling Methods 0.000 title claims abstract description 14
- 238000000151 deposition Methods 0.000 claims abstract description 16
- 230000008021 deposition Effects 0.000 claims abstract description 16
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims abstract description 15
- 238000000034 method Methods 0.000 claims abstract description 10
- 230000001681 protective effect Effects 0.000 claims abstract description 6
- 238000009423 ventilation Methods 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 8
- 239000010703 silicon Substances 0.000 abstract description 8
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 235000012431 wafers Nutrition 0.000 description 8
- 239000007888 film coating Substances 0.000 description 3
- 238000009501 film coating Methods 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 206010067484 Adverse reaction Diseases 0.000 description 1
- 230000006838 adverse reaction Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000006748 scratching Methods 0.000 description 1
- 230000002393 scratching effect Effects 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- H01L21/205—
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
本发明提供一种石墨舟降温方法，在PECVD沉积炉的防护门板上直接打至少两个孔，孔内配合安装抽风风扇，抽风风扇直接将PECVD沉积炉内热气抽取排出至炉外，降低炉内温度。使用该方法可以有效的降低石墨舟温度，极大的节约降温过程的时间，从而提升电池硅片生产效率，提高了硅片良率。
Description
技术领域
本发明应用于太阳能电池制作过程中，尤其涉及一种石墨舟降温方法。
背景技术
太阳能电池的制造需要经过制绒、扩散、刻蚀、镀膜、丝网印刷和烧结测试这七大工序，同时，每一道工序都有自己不同的环境特征，尤其是扩散氧化镀膜工序，需要将装载硅片的石墨舟推进PECVD沉积炉内进行高温镀膜，在沉积结束后降低温度自然等待温度冷却后才能进行石墨舟滁州，因为如果高温出舟的话硅片会翘曲，后续在石墨舟插片机上自动化插片的时候就容易掉片，进而产生连锁不良反应，如硅片舟框擦伤，舟框印增加等，严重影响电池片良率，而且等待降温过程漫长，浪费时间且影响生产效率。
发明内容
鉴于以上，本发明提供一种石墨舟降温方法，使用该方法可以有效的降低石墨舟温度，极大的节约降温过程的时间，从而提升电池硅片生产效率，提高了硅片良率。
具体技术方案如下：
一种石墨舟降温方法，其特征在于，在PECVD沉积炉的防护门板上直接打至少两个孔，孔内配合安装抽风风扇，抽风风扇直接将PECVD沉积炉内热气抽取排出至炉外，降低炉内温度。
进一步，所述抽风风扇对称的在防护门板上开设有4或6个。
进一步，当PECVD沉积炉内温度降至60度时即可出舟。
进一步，抽风风扇一直持续抽气，PECVD沉积炉设备不停则风扇不停。
本发明附加的方面和优点将在下面的描述中进一步给出，部分将从下面的描述中变得明显，或通过本发明的实践了解到。
具体实施方式
下面描述的实施例是示例性的，仅用于解释本发明，而不能解释为对本发明的限制。
本实施例的一种石墨舟降温方法，在PECVD沉积炉的防护门板上直接打至少两个孔，孔内配合安装抽风风扇，抽风风扇直接将PECVD沉积炉内热气抽取排出至炉外，降低炉内温度，当PECVD沉积炉内温度降至60度时即可出舟。此纯机械散热降温方法，可以持续散热，效果明显。
优选的，安装抽风风扇数量为四个或六个，在其他实施例中可根据需要具体选择安装数量。
进一步，抽风风扇一直持续抽气，PECVD沉积炉设备不停则风扇不停。
尽管参照本发明的示意性实施例对本发明的具体实施方式进行了详细的描述，但是必须理解，本领域技术人员可以设计出多种其他的改进和实施例，这些改进和实施例将落在本发明原理的精神和范围之内。
Claims (4)
1.一种石墨舟降温方法，其特征在于，在PECVD沉积炉的防护门板上直接打至少两个孔，孔内配合安装抽风风扇，抽风风扇直接将PECVD沉积炉内热气抽取排出至炉外，降低炉内温度。
2.根据权利要求1所述的石墨舟降温方法，其特征在于，所述抽风风扇对称的在防护门板上开设有4或6个。
3.根据权利要求1所述的石墨舟降温方法，其特征在于，当PECVD沉积炉内温度降至60度时即可出舟。
4.根据权利要求2所述的石墨舟降温方法，其特征在于，抽风风扇一直持续抽气，PECVD沉积炉设备不停则风扇不停。
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| CN202011579772.7A CN112993082A (zh) | 2020-12-28 | 2020-12-28 | 一种石墨舟降温方法 |
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| CN202011579772.7A CN112993082A (zh) | 2020-12-28 | 2020-12-28 | 一种石墨舟降温方法 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103088320A (zh) * | 2011-11-01 | 2013-05-08 | 洛阳尚德太阳能电力有限公司 | 一种管式pecvd设备 |
| CN105845748A (zh) * | 2016-05-20 | 2016-08-10 | 浙江光隆能源科技股份有限公司 | 多晶太阳电池表面氮化硅减反射膜的制作方法 |
| CN107190326A (zh) * | 2017-05-13 | 2017-09-22 | 徐州中辉光伏科技有限公司 | 可实现残余热应力消除处理的太阳能电池用硅片扩散炉 |
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2020
- 2020-12-28 CN CN202011579772.7A patent/CN112993082A/zh active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103088320A (zh) * | 2011-11-01 | 2013-05-08 | 洛阳尚德太阳能电力有限公司 | 一种管式pecvd设备 |
| CN105845748A (zh) * | 2016-05-20 | 2016-08-10 | 浙江光隆能源科技股份有限公司 | 多晶太阳电池表面氮化硅减反射膜的制作方法 |
| CN107190326A (zh) * | 2017-05-13 | 2017-09-22 | 徐州中辉光伏科技有限公司 | 可实现残余热应力消除处理的太阳能电池用硅片扩散炉 |
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