CN112993061B - Self-powered CsPbBr adopting net-shaped hollow structure 3 Photoelectric detector - Google Patents
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- 229910006404 SnO 2 Inorganic materials 0.000 claims abstract description 17
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 230000005525 hole transport Effects 0.000 claims abstract description 12
- 229920002223 polystyrene Polymers 0.000 claims abstract description 12
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Abstract
The invention provides a self-powered CsPbBr adopting a reticular hollow structure 3 A photodetector. Mainly composed of a conductive glass (ITO) layer, SnO 2 Electron transport layer, CsPbBr 3 Perovskite photoelectric conversion layer, MoO 3 A hole transmission layer and an Au electrode layer, wherein a reticular hollow structure is prepared in the photoelectric conversion layer, the hole transmission layer and the electrode layer by utilizing polystyrene microspheres (PS microspheres) through a space-limited growth method to form the self-powered CsPbBr adopting the reticular hollow structure 3 A photodetector; the PS microspheres are larger than CsPbBr 3 Perovskite photoelectric conversion layer and MoO 3 The hole transport layer and the Au electrode layer have a thickness of 1-1.2 μm. The invention has the reticular hollow structure, so photons can easily enter the photoelectric active material from multiple directions through the reticular hollow structure, the photoelectric conversion efficiency is greatly improved, and the CsPbBr is improved 3 Photodetector technology performance. The preparation method is simple, controllable in process, low in energy consumption, low in requirement on operators, low in cost and easy to realize industrial mass production.
Description
Technical Field
The invention belongs to the preparation of inorganic metal halide perovskite structure nano materials and application in photoelectric devices, and particularly relates to self-powered CsPbBr adopting a net-shaped hollow structure 3 A photodetector.
Background
The self-driven photoelectric detector is an ideal research object in the photoelectric detector due to the characteristics of self-sufficiency, wireless, independent work and the like. Under the current large environment of energy shortage, the self-driven photoelectric detector not only can detect signals, but also can supply power to the self through the detected signals, so that the zero-bias driving device works, the power consumption is extremely low, and the self-driven photoelectric detector becomes a hot spot. Currently, commercial self-driven photodetectors are primarily based on silicon. However, because of the opacity of silicon, the light incident on the silicon can only be incident from the top or the side during the test, and the opaque electrode on the top can greatly obstruct the light incident on the siliconThe ground wastes the utilization efficiency of light; in addition, for the detector prepared by using the transparent conductive glass as the substrate, light can enter the device through the glass, so that the detector can obtain better device performance. However, for a deep ultraviolet detector based on a wide bandgap semiconductor, a bottom conductive substrate of the deep ultraviolet detector has a large absorption to deep violet light, and the application of the wide bandgap semiconductor in the field of self-driven photodetectors is limited. In consideration of the two reasons, the self-powered CsPbBr with the reticular hollow structure is prepared by using polystyrene microspheres (PS microspheres for short) through a space-limited growth method 3 The multi-layer structure of the photoelectric detector is provided with the reticular hollow structure, so that incident light can easily enter the active material from the top of the photoelectric detector through the reticular hollow structure, and better device performance is obtained. Meanwhile, the reticular hollow structure can greatly reduce the reflection of incident light, improve the utilization rate of light and further obtain better photoelectric response performance. The structure has great reference value for improving the photoelectric performance of silicon-based photoelectric devices and deep ultraviolet photoelectric detectors.
Disclosure of Invention
The invention aims to provide a self-powered CsPbBr adopting a reticular hollow structure 3 A photodetector. Improves CsPbBr 3 Photodetector technology performance.
The present invention is thus achieved. The structure of the invention mainly comprises a conductive glass (ITO) layer and SnO 2 Electron transport layer, CsPbBr 3 Perovskite photoelectric conversion layer, MoO 3 A hole transmission layer and an Au electrode layer, wherein a reticular hollow structure is prepared in the photoelectric conversion layer, the hole transmission layer and the electrode layer by using polystyrene microspheres (PS microspheres) through a space-limited growth method to form a self-powered CsPbBr adopting the reticular hollow structure 3 A photodetector; the PS microspheres are larger than CsPbBr 3 Perovskite photoelectric conversion layer and MoO 3 The hole transport layer and the Au electrode layer have a thickness of 1-1.2 μm.
In order to realize the aim of the invention, the self-powered CsPbBr adopting the reticular hollow structure 3 The preparation method of the photoelectric detector comprises the following steps：
(1) Selecting ITO conductive glass as a substrate (referred to as an ITO substrate for short);
(2) cleaning the substrate, drying, and treating with ultraviolet-ozone;
(3) compounding quantitative SnO 2 Aqueous solution concentration 3% w/w, CsPbBr 3 The concentration of the precursor solution is 0.5mol/L, a certain amount of PS microspheres with the concentration of 2.5% w/v and the diameter of 1-1.2 mu m are prepared, and the PS microspheres are dispersed and suspended in the absolute ethanol solution for later use;
(4) preparation of SnO by spin coating 2 Film, spin coating prepared SnO on ITO substrate 2 Water solution, spin-coating to form film at 3000rmp, annealing at 100 deg.C for 30min to obtain SnO 2 A film;
(5) preparing a single-layer PS sphere layer, filling a proper amount of deionized water into a circular glass tank with the depth of 10cm and the diameter of 20cm, dripping 200 mu L of PS microsphere ethanol solution into the center of the water surface by using a plastic suction pipe, dripping 1mL of Sodium Dodecyl Sulfate (SDS) solution (10 WT%) along the edge of the glass tank when the PS microspheres are uniformly dispersed on the water surface, and then adding SnO 2 The ITO substrate of the film is inserted into the prepared aqueous solution of the dispersed suspended PS microspheres and slowly and vertically picked up to obtain the SnO with a single layer of PS microspheres distributed in 2 The ITO substrate is baked for 1 hour at 50 ℃ for standby;
(6) spin coating preparation of CsPbBr 3 The perovskite thin film is formed by dropping CsPbBr on the substrate with the PS balls distributed thereon 3 Spin-coating the precursor solution at 1500rmp to form a film, and annealing at 100 ℃ to obtain CsPbBr 3 A film;
(7) sequentially evaporating MoO on the sample 3 A hole transport layer and an Au electrode;
(8) finally, the sample substrate is soaked in chlorobenzene solution for 1 minute to remove PS microspheres to form a reticular hollow structure, and the self-powered CsPbBr is obtained 3 A photodetector.
The self-powered CsPbBr with the reticular hollow structure provided by the invention 3 The photoelectric detector has a reticular hollow structure, so that photons can easily enter light from multiple directions through the reticular hollow structureIn the electroactive material, the photoelectric conversion efficiency is greatly improved.
The self-powered CsPbBr with the reticular hollow structure provided by the invention 3 The preparation method of the photoelectric detector is simple, complex equipment and large energy consumption are not needed, the process is simple and controllable, the requirement on operators is low, the cost is low, and industrial mass production is easy to realize.
Drawings
FIG. 1 is a diagram of a self-powered CsPbBr of the present invention 3 The structure of the photoelectric detector is schematically shown, wherein FIG. 1a is a structure diagram of a device without using PS spheres, and FIG. 1b is a structure diagram of a device with PS microspheres; FIG. 1c is a schematic front sectional view of FIG. 1 b; wherein 1- - -glass, 2- - -ITO conductive layer, 3- - -SnO 2 Electron transport layer, 4- - -CsPbBr 3 Perovskite photoelectric conversion layer, 5- - -MoO 3 Hole transport layer, 6 — Au electrode layer.
FIG. 2 is a diagram of a self-powered CsPbBr system in accordance with the present invention 3 SEM image of photodetector, FIG. 2a is image of PS sphere, and FIG. 2b is CsPbBr 3 An image of a reticulated hollow structure;
FIG. 3 is a diagram of a self-powered CsPbBr system in accordance with the present invention 3 An XRD image of the photodetector;
FIG. 4 is a diagram of a self-powered CsPbBr system in accordance with the present invention 3 An ultraviolet-visible light absorption spectrum of the photodetector;
FIG. 5 is a diagram of a self-powered CsPbBr system in accordance with the present invention 3 The IV diagram of the light irradiation in the positive and negative directions of the photoelectric detector, FIG. 5a is the IV diagram using PS spheres, and FIG. 5b is the IV diagram using PS spheres;
FIG. 6 is a diagram of a self-powered CsPbBr system in accordance with the present invention 3 FIG. 6a is an I-T diagram of a photodetector, FIG. 6b is an I-T diagram of a photodetector with different light intensities at-1 mV, and FIG. 6b is a diagram of a light intensity of 1.45mW/cm 2 Current down versus time;
FIG. 7 is a diagram of a self-powered CsPbBr system in accordance with the present invention 3 A response time plot of the photodetector;
FIG. 8 is a diagram of a self-powered CsPbBr system in accordance with the present invention 3 Responsivity and detectivity of the photodetector;
Detailed Description
The present invention will now be described in detail with reference to the drawings, wherein the embodiments are shown by way of illustration only, and not by way of limitation. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
In this case, self-powered CsPbBr without using PS microspheres was prepared 3 Photoelectric detector
(1) Cleaning a substrate
Selecting an ITO glass sheet with the thickness of 1mm, the side length of 2cm and the channel width of 50 micrometers as a substrate (ITO for short), and ultrasonically cleaning for 30min by using a cleaning solution, deionized water, acetone and absolute ethyl alcohol in sequence;
(2) ultraviolet ozone treatment
And drying the cleaned substrate, and then placing the substrate into an ultraviolet ozone cleaning instrument (PSD-UV4) for ultraviolet ozone treatment for 60min, so that residual organic matters on the surface of the conductive glass can be further removed, the surface tension can be reduced, and the subsequent adsorption and deposition of a film are facilitated.
(3) Preparation of SnO 2 Electron transport layer
SnO 2 The preparation method of the aqueous solution comprises the following steps: preparing a clean sealed bottle according to SnO 2 SnO is prepared by mixing the raw materials with deionized water in a mass ratio of 1:4 2 The aqueous solution (concentration 3% w/w) was then placed on a stirring table and stirred for 30min, while waiting for SnO 2 Completely dissolving in deionized water.
The ITO substrate treated with ultraviolet ozone was placed in the center of the suction piece of a spin coater, and about 150. mu.L of SnO was transferred by a pipette gun 2 The aqueous solution was spun at 3000rmp for 30s on the ITO surface and then annealed at 100 ℃ for 30min on a hot plate.
(4) Preparation of CsPbBr 3 Film(s)
0.1064g cesium bromide (99.999%) and 0.1835g lead bromide (99.99%) were dissolved in 1mL DMSO (99.9%) and left for 24h to form CsPbBr 3 And (3) precursor solution. After filtration, 70. mu.L CsPbBr was added 3 The precursor solution (0.5mol/L) was added dropwise onto the ITO substrate and spin-coated at 1500rpm for 40s, and thenBaking at 100 deg.C for 30 min.
(5) Depositing a hole transport layer and a gold electrode
Preparation of CsPbBr 3 After nanomembrane, 14nm MoO was evaporated by thermal evaporation 3 The hole transport layer is evaporated onto the sample and then again thermally evaporated to
Deposition rate of 100nm Au electrode on MoO 3 On the layer.
Example 2
In this case, the self-powered CsPbBr 3 Preparation of photoelectric detector and photoelectric corresponding performance characterization
(1) Cleaning a substrate
Selecting an ITO glass sheet with the thickness of 1mm, the side length of 2cm and the channel width of 50 micrometers as a substrate (ITO for short), and ultrasonically cleaning for 30min by using a cleaning solution, deionized water, acetone and absolute ethyl alcohol in sequence;
(2) ultraviolet ozone treatment
And drying the cleaned substrate, and then placing the substrate into an ultraviolet ozone cleaning instrument (PSD-UV4) for ultraviolet ozone treatment for 60min, so that residual organic matters on the surface of the conductive glass can be further removed, the surface tension can be reduced, and the subsequent adsorption and deposition of a film are facilitated.
(3) Preparation of SnO 2 Electron transport layer
SnO 2 The preparation method of the aqueous solution comprises the following steps: preparing a clean sealed bottle according to SnO 2 SnO is prepared by mixing the raw materials with deionized water in a mass ratio of 1:4 2 The aqueous solution (concentration 3% w/w) was then placed on a stirring table and stirred for 30min, while waiting for SnO 2 Completely dissolving in deionized water.
The ITO substrate treated with ultraviolet ozone was placed in the center of the suction piece of a spin coater, and about 150. mu.L of SnO was transferred by a pipette gun 2 The aqueous solution was spun at 3000rmp for 30s on the ITO surface and then annealed at 100 ℃ for 30min on a hot plate.
(4) Preparing single-layer PS microspheres (sold in commercial products or purchased externally) with the diameter range of 1-1.2 mu m.
The preparation method of the PS microspheres comprises the following steps:
2.4g of polyvinylpyrrolidone (PVP), 0.06g of 2,2' -Azobisisobutyronitrile (AIBN), 3.25g of styrene and 40 g of absolute ethanol were placed in a four-necked flask and stirred with nitrogen at 300rpm for 2 hours; then heating the flask to 70 ℃, and stirring at the rotating speed of 100rpm for 24 hours; after that, a white product was obtained and centrifuged, washed several times with ethanol; finally, the product was dispersed in ethanol for use. To obtain smaller diameter PS microspheres, the diameter of the PS microspheres can be increased by increasing the amount of PVP in the solution, or by increasing the ratio of AIBN or styrene.
A circular glass jar with a depth of 10cm and a diameter of 20cm was filled with an appropriate amount of deionized water, and 200. mu.L of PS ethanol solution was dropped to the center of the water surface using a plastic pipette. Until the PS microspheres were uniformly spread on the water surface, 1mL of Sodium Dodecyl Sulfate (SDS) solution (10 WT%) was dropped along the edge of the glass jar, then the ITO substrate was inserted from the edge of the PS layer into the water under the PS layer and slowly picked up vertically, and finally the single layer of PS microsphere coated ITO was placed on a hot plate and heated to 50 ℃ and held for 1 h.
(5) Preparation of CsPbBr 3 Film(s)
0.1064g cesium bromide (99.999%) and 0.1835g lead bromide (99.99%) were dissolved in 1mL DMSO (99.9%) and left for 24h to form CsPbBr 3 And (3) precursor solution. After filtration, 70. mu.L CsPbBr was added 3 The precursor solution (concentration 0.5mol/L) was added dropwise onto the ITO substrate full of PS microspheres and spin-coated at 1500rpm for 40s, then baked on a hot plate at 100 ℃ for 30 min.
(6) Deposition of MoO 3 Hole transport layer and gold electrode
Preparation of CsPbBr 3 After nanomembrane, 14nm MoO was evaporated by thermal evaporation 3 The hole transport layer is evaporated onto the sample and then again thermally evaporated to
Deposition rate of 100nm Au electrode on MoO 3 On the layer. Taken out and immersed in a flask containing chlorobenzene for 1 minute to remove the PS microspheres, which were then placed under heatingBaking the mixture on a bench at 100 ℃ for 30min to remove chlorobenzene, thereby obtaining the self-powered CsPbBr with the reticular hollow structure 3 A photodetector.
(7) Photoelectric corresponding performance characterization of detector
High resolution SEM images were measured by field emission scanning electron microscopy, material morphology and crystal structure of the samples were characterized using x-ray diffraction, absorption spectra of the samples were measured with an ultraviolet-visible-near infrared spectrophotometer, I-V and I-T curves were measured by the givens source table, and an optical chopper was used to characterize the fast response time of our device.
Comparison of devices obtained by two different preparation methods:
it can be seen from the structure diagram in fig. 1 that the surface area of the device prepared by using PS spheres is significantly larger than that of the device prepared by the conventional method, and the mesh-like hollow structure can greatly reduce the reflection of incident light, improve the utilization rate of light, and further obtain better photoelectric response performance. Meanwhile, the obtained CsPbBr is low in solubility in dimethyl sulfoxide (DMSO) 3 CsPbBr prepared by conventional one-step spin coating method with low solution concentration 3 The polycrystalline film contained many pinholes and was extremely uneven in surface, while the network polycrystalline film produced by the space-limited growth method using PS microspheres as a template was uniform and dense, as can be seen from the SEM image in fig. 2, and also that the PS microspheres we produced were relatively uniform. It can be seen from fig. 3 that the prepared network polycrystalline film inhibits the growth of the (100) crystal plane and enhances the growth of the (110) crystal plane, which is beneficial to the transmission of carriers. We next tested two CsPbBr 3 The light absorption curve of the film, CsPbBr network, can be seen from FIG. 4 3 The absorption of the film is obviously higher than that of the conventional CsPbBr 3 The film is high, and the utilization rate of light is higher. Meanwhile, in fig. 5, it can be seen that the utilization rate of the reflected light of the gold electrode of the device manufactured by the conventional method is obviously reduced by performing illumination on the front side and the back side, and the photocurrent of the front side and the back side of the device manufactured by the reticular polycrystalline film is not greatly different, which is the advantage of the reticular hollow structure. FIG. 6 is an I-T diagram of different light intensities, and it can be seen that the photocurrent is significantly increased with the increase of the light intensityThe improvement is that the rise and fall times of the device are very short and sensitive, as can be seen in figure 7, while the device has better responsivity and probing ability as can be seen in figure 8.
Claims (2)
1. Self-powered CsPbBr adopting net-shaped hollow structure 3 The photoelectric detector is composed of a conductive glass (ITO) layer and SnO 2 Electron transport layer, CsPbBr 3 Perovskite photoelectric conversion layer, MoO 3 The hole transport layer and the Au electrode layer are characterized in that a reticular hollow structure is prepared in the photoelectric conversion layer, the hole transport layer and the electrode layer by utilizing polystyrene microspheres (PS microspheres) through a space-limited growth method to form self-powered CsPbBr adopting the reticular hollow structure 3 A photodetector; the PS microspheres are larger than CsPbBr 3 Perovskite photoelectric conversion layer and MoO 3 The hole transport layer and the Au electrode layer have an overall thickness of 1 to 1.2 μm.
2. Self-powered CsPbBr adopting net-shaped hollow structure 3 The preparation method of the photoelectric detector is characterized by comprising the following steps:
(1) selecting conductive glass (ITO) as a substrate;
(2) cleaning the substrate, drying, and treating with ultraviolet-ozone;
(3) compounding quantitative SnO 2 Aqueous solution concentration 3% w/w, CsPbBr 3 The concentration of the precursor solution is 0.5mol/L, a certain amount of polystyrene microspheres (PS microspheres) with the concentration of 2.5% w/v and the diameter of 1-1.2 mu m are prepared, and the polystyrene microspheres are dispersed and suspended in the absolute ethanol solution for later use;
(4) preparation of SnO by spin coating 2 Film, spin coating prepared SnO on ITO substrate 2 Water solution, spin-coating at 3000rmp to form film, and annealing at 100 deg.C for 30min to obtain SnO 2 A film;
(5) preparing a single-layer polystyrene microsphere (PS microsphere) layer, filling a proper amount of deionized water into a circular glass tank with the depth of 10cm and the diameter of 20cm, and using a plastic suction pipe to fill 200 mu L of polystyrene microspheres(PS microspheres) ethanol solution is dropped to the center of the water surface, 1mL of a solution with 10 WT% of Sodium Dodecyl Sulfate (SDS) concentration is dropped along the edge of a glass tank when the PS microspheres are uniformly dispersed on the water surface, and then SnO is added 2 The ITO substrate of the film is inserted into the prepared aqueous solution of the dispersed and suspended polystyrene microspheres (PS microspheres) and is slowly and vertically picked up to obtain SnO with a single layer of polystyrene microspheres (PS microspheres) 2 The ITO substrate is baked for 1 hour at 50 ℃ for standby;
(6) spin coating preparation of CsPbBr 3 The perovskite film is prepared by dripping CsPbBr on the substrate which is fully distributed with polystyrene microspheres (PS microspheres) 3 Spin-coating the precursor solution at 1500rmp to form a film, and annealing at 100 ℃ to obtain CsPbBr 3 A film;
(7) sequentially evaporating MoO on the sample 3 A hole transport layer and an Au electrode;
(8) finally, the sample substrate is soaked in chlorobenzene solution to remove polystyrene microspheres (PS microspheres) to form a reticular hollow structure, and the self-powered CsPbBr adopting the reticular hollow structure is obtained 3 A photodetector.
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