CN112993061A - Self-powered CsPbBr adopting net-shaped hollow structure3Photoelectric detector - Google Patents
Self-powered CsPbBr adopting net-shaped hollow structure3Photoelectric detector Download PDFInfo
- Publication number
- CN112993061A CN112993061A CN202011388500.9A CN202011388500A CN112993061A CN 112993061 A CN112993061 A CN 112993061A CN 202011388500 A CN202011388500 A CN 202011388500A CN 112993061 A CN112993061 A CN 112993061A
- Authority
- CN
- China
- Prior art keywords
- cspbbr
- layer
- microspheres
- hollow structure
- self
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004793 Polystyrene Substances 0.000 claims abstract description 50
- 239000004005 microsphere Substances 0.000 claims abstract description 38
- 238000002360 preparation method Methods 0.000 claims abstract description 20
- 239000011521 glass Substances 0.000 claims abstract description 19
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 16
- 238000006243 chemical reaction Methods 0.000 claims abstract description 12
- 230000005525 hole transport Effects 0.000 claims abstract description 10
- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 claims abstract description 10
- 238000000034 method Methods 0.000 claims abstract description 8
- 229920002223 polystyrene Polymers 0.000 claims abstract description 5
- 239000010410 layer Substances 0.000 claims description 42
- 239000000758 substrate Substances 0.000 claims description 31
- 239000000243 solution Substances 0.000 claims description 24
- 239000010408 film Substances 0.000 claims description 23
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 19
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 18
- 239000007864 aqueous solution Substances 0.000 claims description 10
- 238000004140 cleaning Methods 0.000 claims description 10
- 238000004528 spin coating Methods 0.000 claims description 10
- 239000008367 deionised water Substances 0.000 claims description 9
- 229910021641 deionized water Inorganic materials 0.000 claims description 9
- MVPPADPHJFYWMZ-UHFFFAOYSA-N chlorobenzene Chemical compound ClC1=CC=CC=C1 MVPPADPHJFYWMZ-UHFFFAOYSA-N 0.000 claims description 8
- 239000002243 precursor Substances 0.000 claims description 8
- DBMJMQXJHONAFJ-UHFFFAOYSA-M Sodium laurylsulphate Chemical compound [Na+].CCCCCCCCCCCCOS([O-])(=O)=O DBMJMQXJHONAFJ-UHFFFAOYSA-M 0.000 claims description 6
- 239000002356 single layer Substances 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 4
- 238000001035 drying Methods 0.000 claims description 4
- 239000004033 plastic Substances 0.000 claims description 3
- 229920003023 plastic Polymers 0.000 claims description 3
- 238000013329 compounding Methods 0.000 claims description 2
- 238000001704 evaporation Methods 0.000 claims description 2
- 238000011049 filling Methods 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 230000005540 biological transmission Effects 0.000 abstract description 5
- 239000011149 active material Substances 0.000 abstract description 3
- 238000005265 energy consumption Methods 0.000 abstract description 2
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 17
- IAZDPXIOMUYVGZ-UHFFFAOYSA-N Dimethylsulphoxide Chemical compound CS(C)=O IAZDPXIOMUYVGZ-UHFFFAOYSA-N 0.000 description 11
- 239000010931 gold Substances 0.000 description 9
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 8
- 238000000151 deposition Methods 0.000 description 6
- OZAIFHULBGXAKX-UHFFFAOYSA-N 2-(2-cyanopropan-2-yldiazenyl)-2-methylpropanenitrile Chemical compound N#CC(C)(C)N=NC(C)(C)C#N OZAIFHULBGXAKX-UHFFFAOYSA-N 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 4
- PPBRXRYQALVLMV-UHFFFAOYSA-N Styrene Chemical compound C=CC1=CC=CC=C1 PPBRXRYQALVLMV-UHFFFAOYSA-N 0.000 description 4
- 235000019441 ethanol Nutrition 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 3
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 3
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000003756 stirring Methods 0.000 description 3
- OZAIFHULBGXAKX-VAWYXSNFSA-N AIBN Substances N#CC(C)(C)\N=N\C(C)(C)C#N OZAIFHULBGXAKX-VAWYXSNFSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910006735 SnO2SnO Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 238000000862 absorption spectrum Methods 0.000 description 2
- LYQFWZFBNBDLEO-UHFFFAOYSA-M caesium bromide Chemical compound [Br-].[Cs+] LYQFWZFBNBDLEO-UHFFFAOYSA-M 0.000 description 2
- 238000012512 characterization method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- ZASWJUOMEGBQCQ-UHFFFAOYSA-L dibromolead Chemical compound Br[Pb]Br ZASWJUOMEGBQCQ-UHFFFAOYSA-L 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001878 scanning electron micrograph Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000001179 sorption measurement Methods 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000002441 X-ray diffraction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000000445 field-emission scanning electron microscopy Methods 0.000 description 1
- 238000001198 high resolution scanning electron microscopy Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 239000002086 nanomaterial Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1884—Manufacture of transparent electrodes, e.g. TCO, ITO
- H01L31/1888—Manufacture of transparent electrodes, e.g. TCO, ITO methods for etching transparent electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
The invention provides a self-powered CsPbBr adopting a reticular hollow structure3A photodetector. Mainly composed of a conductive glass (ITO) layer, SnO2Electron transport layer, CsPbBr3Perovskite photoelectric conversion layer, MoO3A hole transmission layer and an Au electrode layer, wherein a reticular hollow structure is prepared in the photoelectric conversion layer, the hole transmission layer and the electrode layer by using polystyrene microspheres (PS microspheres) through a space-limited growth method to form a self-powered CsPbBr adopting the reticular hollow structure3A photodetector; the PS microspheres are larger than CsPbBr3Perovskite photoelectric conversion layer and MoO3The hole transport layer and the Au electrode layer have a thickness of 1-1.2 μm. The invention has a reticular hollow structure, so photons can easily pass through the reticular hollow structure from multiple directionsThe product enters a photoelectric active material, greatly improves the photoelectric conversion efficiency and improves CsPbBr3Photodetector technology performance. The preparation method is simple, controllable in process, low in energy consumption, low in requirement on operators, low in cost and easy to realize industrial mass production.
Description
Technical Field
The present invention belongs to the field of inorganic metal halide perovskite structure nano material preparation and its photoelectric device methodThe application of the surface, in particular to a self-powered CsPbBr adopting a reticular hollow structure3A photodetector.
Background
The self-driven photoelectric detector is an ideal research object in the photoelectric detector due to the characteristics of self-sufficiency, wireless, independent work and the like. Under the current large environment of energy shortage, the self-driven photoelectric detector not only can detect signals, but also can supply power to the self through the detected signals, so that the zero-bias driving device works, the power consumption is extremely low, and the self-driven photoelectric detector becomes a hot spot. Currently, commercial self-driven photodetectors are primarily based on silicon. However, due to the opacity of silicon, the incident light can only be incident from the top or the side when testing, and the opaque electrode on the top can greatly obstruct the incidence of light, thus greatly wasting the utilization efficiency of light; in addition, for the detector prepared by using the transparent conductive glass as the substrate, light can enter the device through the glass, so that the detector can obtain better device performance. However, for a deep ultraviolet detector based on a wide bandgap semiconductor, a bottom conductive substrate of the deep ultraviolet detector has a large absorption to deep violet light, and the application of the wide bandgap semiconductor in the field of self-driven photodetectors is limited. In consideration of the two reasons, the self-powered CsPbBr with the reticular hollow structure is prepared by using polystyrene microspheres (PS microspheres for short) through a space-limited growth method3The multi-layer structure of the photoelectric detector is provided with the reticular hollow structure, so that incident light can easily enter the active material from the top of the photoelectric detector through the reticular hollow structure, and better device performance is obtained. Meanwhile, the reticular hollow structure can greatly reduce the reflection of incident light, improve the utilization rate of light and further obtain better photoelectric response performance. The structure has great reference value for improving the photoelectric performance of silicon-based photoelectric devices and deep ultraviolet photoelectric detectors.
Disclosure of Invention
The invention aims to provide a self-powered CsPbBr adopting a reticular hollow structure3A photodetector. Improves CsPbBr3Photodetector technology performance.
The present invention is thus achieved. The structure of the invention mainly comprises a conductive glass (ITO) layer and SnO2Electron transport layer, CsPbBr3Perovskite photoelectric conversion layer, MoO3A hole transmission layer and an Au electrode layer, wherein a reticular hollow structure is prepared in the photoelectric conversion layer, the hole transmission layer and the electrode layer by using polystyrene microspheres (PS microspheres) through a space-limited growth method to form a self-powered CsPbBr adopting the reticular hollow structure3A photodetector; the PS microspheres are larger than CsPbBr3Perovskite photoelectric conversion layer and MoO3The hole transport layer and the Au electrode layer have a thickness of 1-1.2 μm.
In order to realize the purpose of the invention, the self-powered CsPbBr adopting the reticular hollow structure3The preparation method of the photoelectric detector comprises the following steps:
(1) selecting ITO conductive glass as a substrate (referred to as an ITO substrate for short);
(2) cleaning the substrate, drying, and treating with ultraviolet-ozone;
(3) compounding quantitative SnO2 Aqueous solution concentration 3% w/w, CsPbBr3The concentration of the precursor solution is 0.5mol/L, a certain amount of PS microspheres with the concentration of 2.5% w/v and the diameter of 1-1.2 mu m are prepared, and the PS microspheres are dispersed and suspended in the absolute ethanol solution for later use;
(4) preparation of SnO by spin coating2Film, spin coating prepared SnO on ITO substrate2Water solution, spin-coating at 3000rmp to form film, and annealing at 100 deg.C for 30min to obtain SnO2A film;
(5) preparing a single-layer PS sphere layer, filling a proper amount of deionized water into a circular glass tank with the depth of 10cm and the diameter of 20cm, dripping 200 mu L of PS microsphere ethanol solution into the center of the water surface by using a plastic suction pipe, dripping 1mL of Sodium Dodecyl Sulfate (SDS) solution (10 WT%) along the edge of the glass tank when the PS microspheres are uniformly dispersed on the water surface, and then adding SnO2The ITO substrate of the film is inserted into the prepared aqueous solution of the dispersed suspended PS microspheres and slowly and vertically picked up to obtain the SnO with a single layer of PS microspheres distributed in2The ITO substrate is baked for 1 hour at 50 ℃ for standby;
(6) rotary wrenchCoating preparation CsPbBr3The perovskite thin film is formed by dropping CsPbBr on the substrate with the PS balls distributed thereon3Spin-coating the precursor solution at 1500rmp to form a film, and annealing at 100 ℃ to obtain CsPbBr3A film;
(7) sequentially evaporating MoO on the sample3A hole transport layer and an Au electrode;
(8) finally, the sample substrate is soaked in chlorobenzene solution for 1 minute to remove PS microspheres to form a reticular hollow structure, and the self-powered CsPbBr is obtained3A photodetector.
The self-powered CsPbBr with the reticular hollow structure provided by the invention3The photoelectric detector has a reticular hollow structure, so that photons can easily enter the photoelectric active material from multiple directions through the reticular hollow structure, and the photoelectric conversion efficiency is greatly improved.
The self-powered CsPbBr with the reticular hollow structure provided by the invention3The preparation method of the photoelectric detector is simple, complex equipment and large energy consumption are not needed, the process is simple and controllable, the requirement on operators is low, the cost is low, and industrial mass production is easy to realize.
Drawings
FIG. 1 is a diagram of a self-powered CsPbBr of the present invention3The structure of the photoelectric detector is schematically shown, wherein FIG. 1a is a structure diagram of a device without using PS spheres, and FIG. 1b is a structure diagram of a device with PS microspheres; FIG. 1c is a schematic front sectional view of FIG. 1 b; wherein 1- - -glass, 2- - -ITO conductive layer, 3- - -SnO2Electron transport layer, 4- - -CsPbBr3Perovskite photoelectric conversion layer, 5- - -MoO3Hole transport layer, 6 — Au electrode layer.
FIG. 2 is a diagram of a self-powered CsPbBr system in accordance with the present invention3SEM image of photodetector, FIG. 2a is image of PS sphere, and FIG. 2b is CsPbBr3An image of a reticulated hollow structure;
FIG. 3 is a diagram of a self-powered CsPbBr system in accordance with the present invention3An XRD image of the photodetector;
FIG. 4 is a diagram of a self-powered CsPbBr system in accordance with the present invention3An ultraviolet-visible light absorption spectrum of the photodetector;
FIG. 5 is the bookSelf-powered CsPbBr3The IV diagram of the light irradiation in the positive and negative directions of the photoelectric detector, FIG. 5a is the IV diagram using PS spheres, and FIG. 5b is the IV diagram using PS spheres;
FIG. 6 is a diagram of a self-powered CsPbBr system in accordance with the present invention3FIG. 6a is an I-T diagram of a photodetector, FIG. 6b is an I-T diagram of a photodetector with different light intensities at-1 mV, and FIG. 6b is a diagram of a light intensity of 1.45mW/cm2Current down versus time;
FIG. 7 is a diagram of a self-powered CsPbBr system in accordance with the present invention3A response time plot of the photodetector;
FIG. 8 is a diagram of a self-powered CsPbBr system in accordance with the present invention3Responsivity and detectivity of the photodetector;
Detailed Description
The present invention will now be described in detail with reference to the drawings, wherein the embodiments are shown by way of illustration only, and not by way of limitation. All other embodiments, which can be obtained by a person skilled in the art without inventive step based on the embodiments of the present invention, are within the scope of the present invention.
Example 1
In this case, self-powered CsPbBr without using PS microspheres was prepared3Photoelectric detector
(1) Cleaning a substrate
Selecting an ITO glass sheet with the thickness of 1mm, the side length of 2cm and the channel width of 50 micrometers as a substrate (ITO for short), and ultrasonically cleaning for 30min by using a cleaning solution, deionized water, acetone and absolute ethyl alcohol in sequence;
(2) ultraviolet ozone treatment
And drying the cleaned substrate, and then placing the substrate into an ultraviolet ozone cleaning instrument (PSD-UV4) for ultraviolet ozone treatment for 60min, so that residual organic matters on the surface of the conductive glass can be further removed, the surface tension can be reduced, and the subsequent adsorption and deposition of a film are facilitated.
(3) Preparation of SnO2Electron transport layer
SnO2The preparation method of the aqueous solution comprises the following steps: preparing a clean sealed bottle according to SnO2SnO is prepared by mixing the raw materials with deionized water in a mass ratio of 1:42The aqueous solution (concentration 3% w/w) was then placed on a stirring table and stirred for 30min, while waiting for SnO2Completely dissolving in deionized water.
The ITO substrate treated with ultraviolet ozone was placed in the center of the suction piece of a spin coater, and about 150. mu.L of SnO was transferred by a pipette gun2The aqueous solution was spun at 3000rmp for 30s on the ITO surface and then annealed at 100 ℃ for 30min on a hot plate.
(4) Preparation of CsPbBr3Film(s)
0.1064g cesium bromide (99.999%) and 0.1835g lead bromide (99.99%) were dissolved in 1mL DMSO (99.9%) and left for 24h to form CsPbBr3And (3) precursor solution. After filtration, 70. mu.L CsPbBr was added3The precursor solution (0.5mol/L) was added dropwise onto the ITO substrate and spin-coated at 1500rpm for 40s, followed by baking on a hot plate at 100 ℃ for 30 min.
(5) Depositing a hole transport layer and a gold electrode
Preparation of CsPbBr3After nanomembrane, 14nm MoO was evaporated by thermal evaporation3The hole transport layer is evaporated onto the sample and then again thermally evaporated to
Deposition rate of 100nm Au electrode on MoO3On the layer.
Example 2
In this case, the self-powered CsPbBr3Preparation of photoelectric detector and photoelectric corresponding performance characterization
(1) Cleaning a substrate
Selecting an ITO glass sheet with the thickness of 1mm, the side length of 2cm and the channel width of 50 micrometers as a substrate (ITO for short), and ultrasonically cleaning for 30min by using a cleaning solution, deionized water, acetone and absolute ethyl alcohol in sequence;
(2) ultraviolet ozone treatment
And drying the cleaned substrate, and then placing the substrate into an ultraviolet ozone cleaning instrument (PSD-UV4) for ultraviolet ozone treatment for 60min, so that residual organic matters on the surface of the conductive glass can be further removed, the surface tension can be reduced, and the subsequent adsorption and deposition of a film are facilitated.
(3) Preparation of SnO2Electron transport layer
SnO2The preparation method of the aqueous solution comprises the following steps: preparing a clean sealed bottle according to SnO2SnO is prepared by mixing the raw materials with deionized water in a mass ratio of 1:42The aqueous solution (concentration 3% w/w) was then placed on a stirring table and stirred for 30min, while waiting for SnO2Completely dissolving in deionized water.
The ITO substrate treated with ultraviolet ozone was placed in the center of the suction piece of a spin coater, and about 150. mu.L of SnO was transferred by a pipette gun2The aqueous solution was spun at 3000rmp for 30s on the ITO surface and then annealed at 100 ℃ for 30min on a hot plate.
(4) Preparing single-layer PS microspheres (sold in commercial products or purchased externally) with the diameter range of 1-1.2 mu m.
The preparation method of the PS microspheres comprises the following steps:
2.4g of polyvinylpyrrolidone (PVP), 0.06g of 2,2' -Azobisisobutyronitrile (AIBN), 3.25g of styrene and 40 g of absolute ethanol were placed in a four-necked flask and stirred with nitrogen at 300rpm for 2 hours; then heating the flask to 70 ℃, and stirring at the rotating speed of 100rpm for 24 hours; after that, a white product was obtained and centrifuged, washed several times with ethanol; finally, the product was dispersed in ethanol for use. To obtain smaller diameter PS microspheres, the diameter of the PS microspheres can be increased by increasing the amount of PVP in the solution, or by increasing the ratio of AIBN or styrene.
A circular glass jar with a depth of 10cm and a diameter of 20cm was filled with an appropriate amount of deionized water, and 200. mu.L of PS ethanol solution was dropped to the center of the water surface using a plastic pipette. Until the PS microspheres were uniformly spread on the water surface, 1mL of Sodium Dodecyl Sulfate (SDS) solution (10 WT%) was dropped along the edge of the glass jar, then the ITO substrate was inserted from the edge of the PS layer into the water under the PS layer and slowly picked up vertically, and finally the single layer of PS microsphere coated ITO was placed on a hot plate and heated to 50 ℃ and held for 1 h.
(5) Preparation of CsPbBr3Film(s)
0.1064g cesium bromide (99.999%) and 0.1835g lead bromide (99.99%) were dissolved in 1mL DMSO (99.9%) and left for 24h to form CsPbBr3And (3) precursor solution. After filtration, 70. mu.L CsPbBr was added3The precursor solution (concentration 0.5mol/L) was added dropwise onto the ITO substrate full of PS microspheres and spin-coated at 1500rpm for 40s, then baked on a hot plate at 100 ℃ for 30 min.
(6) Deposition of MoO3Hole transport layer and gold electrode
Preparation of CsPbBr3After nanomembrane, 14nm MoO was evaporated by thermal evaporation3The hole transport layer is evaporated onto the sample and then again thermally evaporated to
Deposition rate of 100nm Au electrode on MoO3On the layer. Taking out and immersing the mixture into a bottle filled with chlorobenzene for 1 minute to remove PS microspheres, then putting the mixture on a heating table and baking the mixture for 30 minutes at 100 ℃ to remove the chlorobenzene, and obtaining the self-powered CsPbBr with the reticular hollow structure3A photodetector.
(7) Photoelectric corresponding performance characterization of detector
High resolution SEM images were measured by field emission scanning electron microscopy, material morphology and crystal structure of the samples were characterized using x-ray diffraction, absorption spectra of the samples were measured with an ultraviolet-visible-near infrared spectrophotometer, I-V and I-T curves were measured by the givens source table, and an optical chopper was used to characterize the fast response time of our device.
Comparison of devices obtained by two different preparation methods:
it can be seen from the structure diagram in fig. 1 that the surface area of the device prepared by using PS spheres is significantly larger than that of the device prepared by the conventional method, and the mesh-like hollow structure can greatly reduce the reflection of incident light, improve the utilization rate of light, and further obtain better photoelectric response performance. Meanwhile, the obtained CsPbBr is low in solubility in dimethyl sulfoxide (DMSO)3CsPbBr prepared by conventional one-step spin coating method with low solution concentration3The polycrystalline film contained many pinholes and was extremely uneven in surface, while the net-like polycrystalline film produced by the space-limited growth method using PS microspheres as a template was uniform and dense, as shown in the SEM image of FIG. 2It can be seen that the PS microspheres produced by us are more uniform. It can be seen from fig. 3 that the prepared network polycrystalline film inhibits the growth of the (100) crystal plane and enhances the growth of the (110) crystal plane, which is beneficial to the transmission of carriers. We next tested two CsPbBr3The light absorption curve of the film, CsPbBr network, can be seen from FIG. 43The absorption of the film is obviously higher than that of the conventional CsPbBr3The film is high, and the utilization rate of light is higher. Meanwhile, in fig. 5, it can be seen that the utilization rate of the reflected light of the gold electrode of the device manufactured by the conventional method is obviously reduced by performing illumination on the front side and the back side, and the photocurrent of the front side and the back side of the device manufactured by the reticular polycrystalline film is not greatly different, which is the advantage of the reticular hollow structure. Fig. 6 is an I-T diagram under different light intensities, and it can be seen that the photocurrent is significantly increased with the increase of the light intensity, and the rising and falling times of the device are very short and very sensitive, as can be seen from fig. 7, while it can be seen from fig. 8 that the device has better responsivity and probing degree.
Claims (2)
1. Self-powered CsPbBr adopting net-shaped hollow structure3The photoelectric detector mainly comprises a conductive glass (ITO) layer and SnO2Electron transport layer, CsPbBr3Perovskite photoelectric conversion layer, MoO3The hole transport layer and the Au electrode layer are characterized in that a reticular hollow structure is prepared in the photoelectric conversion layer, the hole transport layer and the electrode layer by utilizing polystyrene microspheres through a space-limited growth method to form the self-powered CsPbBr adopting the reticular hollow structure3A photodetector; the PS microspheres are larger than CsPbBr3Perovskite photoelectric conversion layer and MoO3The thicknesses of the hole transport layer and the Au electrode layer are 1-1.2 mu m; the polystyrene microspheres are referred to as PS microspheres for short.
2. Self-powered CsPbBr adopting net-shaped hollow structure3The preparation method of the photoelectric detector is characterized by comprising the following steps:
(1) selecting conductive glass as a substrate (ITO glass substrate for short);
(2) cleaning the substrate, drying, and treating with ultraviolet-ozone;
(3) compounding quantitative SnO2Aqueous solution concentration 3% w/w, CsPbBr3The concentration of the precursor solution is 0.5mol/L, a certain amount of PS microspheres with the concentration of 2.5% w/v and the diameter of 1-1.2 mu m are prepared, and the PS microspheres are dispersed and suspended in the absolute ethanol solution for later use;
(4) preparation of SnO by spin coating2Film, spin coating prepared SnO on ITO substrate2Water solution, spin-coating at 3000rmp to form film, and annealing at 100 deg.C for 30min to obtain SnO2A film;
(5) preparing a single-layer PS sphere layer, filling a proper amount of deionized water into a circular glass tank with the depth of 10cm and the diameter of 20cm, dripping 200 mu L of PS microsphere ethanol solution into the center of the water surface by using a plastic suction pipe, dripping 1mL of Sodium Dodecyl Sulfate (SDS) solution (10 WT%) along the edge of the glass tank when the PS microspheres are uniformly dispersed on the water surface, and then adding SnO2The ITO substrate of the film is inserted into the prepared aqueous solution of the dispersed suspended PS microspheres and slowly and vertically picked up to obtain the SnO with a single layer of PS microspheres distributed in2The ITO substrate is baked for 1 hour at 50 ℃ for standby;
(6) spin coating preparation of CsPbBr3The perovskite thin film is formed by dropping CsPbBr on the substrate with the PS balls distributed thereon3Spin-coating the precursor solution at 1500rmp to form a film, and annealing at 100 ℃ to obtain CsPbBr3A film;
(7) sequentially evaporating MoO on the sample3A hole transport layer and an Au electrode;
(8) finally, the sample substrate is soaked in chlorobenzene solution to remove PS microspheres to form a reticular hollow structure, and the self-powered CsPbBr is obtained3A photodetector.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011388500.9A CN112993061B (en) | 2020-12-02 | 2020-12-02 | Self-powered CsPbBr adopting net-shaped hollow structure 3 Photoelectric detector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011388500.9A CN112993061B (en) | 2020-12-02 | 2020-12-02 | Self-powered CsPbBr adopting net-shaped hollow structure 3 Photoelectric detector |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN112993061A true CN112993061A (en) | 2021-06-18 |
| CN112993061B CN112993061B (en) | 2022-08-02 |
Family
ID=76344852
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011388500.9A Active CN112993061B (en) | 2020-12-02 | 2020-12-02 | Self-powered CsPbBr adopting net-shaped hollow structure 3 Photoelectric detector |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112993061B (en) |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
| TW201021222A (en) * | 2008-11-28 | 2010-06-01 | Univ Nat Taiwan | Metal film electrode for organic solar cells and the method for forming the same |
| CN103022252A (en) * | 2012-12-22 | 2013-04-03 | 蚌埠玻璃工业设计研究院 | Preparation method for antireflection film of solar cell |
| CN106410043A (en) * | 2016-11-30 | 2017-02-15 | 北京中科卓研科技有限公司 | Optical detector based on three-dimensional perovskite material and preparation method thereof |
| US20170301479A1 (en) * | 2014-09-10 | 2017-10-19 | Ecole Polytechnique Federale De Lausanne (Epfl) | Photodetector |
-
2020
- 2020-12-02 CN CN202011388500.9A patent/CN112993061B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101246911A (en) * | 2008-03-10 | 2008-08-20 | 北京航空航天大学 | Metal microgrid transparent electrode and method for producing the same |
| TW201021222A (en) * | 2008-11-28 | 2010-06-01 | Univ Nat Taiwan | Metal film electrode for organic solar cells and the method for forming the same |
| CN103022252A (en) * | 2012-12-22 | 2013-04-03 | 蚌埠玻璃工业设计研究院 | Preparation method for antireflection film of solar cell |
| US20170301479A1 (en) * | 2014-09-10 | 2017-10-19 | Ecole Polytechnique Federale De Lausanne (Epfl) | Photodetector |
| CN106410043A (en) * | 2016-11-30 | 2017-02-15 | 北京中科卓研科技有限公司 | Optical detector based on three-dimensional perovskite material and preparation method thereof |
Non-Patent Citations (1)
| Title |
|---|
| LIU, RONGHUAN，ET.AL: "Low-reflection, (110)-orientation-preferred CsPbBr3 nanonet films for application in high-performance perovskite photodetectors", 《NANOSCALE》 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN112993061B (en) | 2022-08-02 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN107919409B (en) | One kind being based on CsPbBr3The visible light photodetector and preparation method thereof of full-inorganic perovskite nano wire | |
| Kushwaha et al. | Defect induced high photocurrent in solution grown vertically aligned ZnO nanowire array films | |
| US11710801B2 (en) | Silicon carbide-based full-spectrum-responsive photodetector and method for producing same | |
| CN111952463B (en) | Preparation method of large-area perovskite nanowire array | |
| CN106549079A (en) | A kind of ultraviolet light detector and preparation method thereof | |
| CN103367476B (en) | A kind of N +the black silicon new construction of/N-type and preparation technology | |
| CN103545397A (en) | Film ultraviolet light detector, manufacturing method thereof and application thereof | |
| CN109461820A (en) | Two-dimensional lead-free organic-inorganic hybrid perovskite diode photodetector and preparation method thereof | |
| Shaikh et al. | Chemical synthesis of pinecone like ZnO films for UV photodetector applications | |
| Chen et al. | Ag2S/ZnO core-shell nanoheterojunction for a self-powered solid-state photodetector with wide spectral response | |
| Kaawash et al. | Highly stable and sensitive photon detection performance of ZnO thin film for ultraviolet light | |
| Chen et al. | Photoelectrical and low-frequency noise characteristics of ZnO nanorod photodetectors prepared on flexible substrate | |
| CN112885922A (en) | Based on PtSe2Photoelectric detector with silicon nano-pillar array and preparation method thereof | |
| CN107425123A (en) | A kind of broadband flexible optical detector of perovskite and preparation method thereof | |
| CN110556478A (en) | Perovskite weak light detector based on plasmon effect | |
| Jia et al. | Depleted Sb2S3 thin film photoconductive detectors with fast response speed and high polarization sensitivity | |
| CN108767028A (en) | Flexible solar blind ultraviolet detector and preparation method thereof based on gallium oxide heterojunction structure | |
| CN106684201B (en) | A kind of zinc oxide nano rod/black silicon heterogenous nano photodetectors and preparation method thereof | |
| Shougaijam et al. | Enhancement of broad light detection based on annealed Al-NPs assisted TiO2-NWs deposited on p-Si by GLAD technique | |
| CN107768478A (en) | A kind of organic/perovskite bulk-heterojunction nanowire photodiode detector and preparation method thereof | |
| CN104638109A (en) | Cathode interface material for organic solar cells and preparation method thereof | |
| CN112993061B (en) | Self-powered CsPbBr adopting net-shaped hollow structure 3 Photoelectric detector | |
| CN106449978A (en) | Preparation method of visible blind ultraviolet detector based on CH3NH3PbCl3 film | |
| CN107275424B (en) | A kind of ultraviolet light response device and preparation method based on homogeneity ZnO nano nucleocapsid array | |
| CN106910751B (en) | A kind of heterogeneous monodimension nano stick array ultraviolet detectors of TiO2/NPB and preparation method thereof based on from depletion effect |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |