CN112987501B - Direct-write lithography system and direct-write lithography method - Google Patents
Direct-write lithography system and direct-write lithography method Download PDFInfo
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- CN112987501B CN112987501B CN201911303595.7A CN201911303595A CN112987501B CN 112987501 B CN112987501 B CN 112987501B CN 201911303595 A CN201911303595 A CN 201911303595A CN 112987501 B CN112987501 B CN 112987501B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/073—Shaping the laser spot
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
- G03F7/2053—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a laser
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
- G03F7/704—Scanned exposure beam, e.g. raster-, rotary- and vector scanning
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/7055—Exposure light control in all parts of the microlithographic apparatus, e.g. pulse length control or light interruption
- G03F7/70558—Dose control, i.e. achievement of a desired dose
Abstract
A direct-write lithography system and a direct-write lithography method, wherein the direct-write lithography system comprises a direct-write light source, a motion mechanism, a central controller, a light spot graph input device and a projection optical device; the movement mechanism is used for driving the projection optical device to scan along a preset path and sending position data of a reference point; the central controller is used for reading corresponding light spot image data in the light spot graphic file sequence according to the position data; the light spot pattern input device is used for modulating the initial light beam provided by the direct-writing light source according to the light spot image data to generate pattern light; the projection optical device is used for projecting deformation light spots to the surface of the photoetching part according to the pattern light, scanning along a preset path under the driving of the movement mechanism, and forming preset controllable deformation light spots by changing light spot image data along with position data in the scanning process. The direct-writing photoetching system and the direct-writing photoetching method realize maskless gray-scale photoetching of a three-dimensional topography structure of a complex surface, and improve photoetching precision and photoetching efficiency.
Description
Technical Field
The invention relates to the technical field of micro-nano processing, in particular to a direct-write photoetching system and a direct-write photoetching method.
Background
Photoelectron is a high and new technology which is rapidly developed after microelectronics, current laser devices, photodetectors, diffraction gratings and the like are initial development products of the photoelectron technology, and the photoelectron technology has wide development prospects in the aspects of display, imaging, detection and the like in the future.
From the analysis of the microstructure of the device, a circuit in the microelectronic device is a 2D pattern, the duty ratio of the pattern is not high, the optoelectronic device focuses more on the 3D shape of the surface of the microstructure, and the multi-step continuous shape is a main characteristic. Therefore, the processing requirements of 3D microstructures facing new applications of photoelectronics are different from the current microelectronic requirements, and the surface type requirements are changed from 2D to 3D. Although the current products have more common microprisms, microlenses and the like with 3D structures, the current products also have regular structures, and with the technical development, the micro-structure requirements of optoelectronic application are changed from regular 3D to complex 3D. The processing method of the complex 3D structure has scientific significance for a plurality of research supports in the field of photoelectron, and has strategic significance for the development of new industry and new application.
Currently, the main micromachining technical means for realizing the 3D micro-nano morphology include technologies such as precision diamond turning, 3D printing, and photoetching. Diamond turning is a preferred method for manufacturing 3D (three-dimensional) morphology microstructures with tens of micrometers in size and regularly arranged, and a typical application of the method is a microprism film; the 3D printing technology can be used for manufacturing a complex 3D structure, but the resolution of the traditional galvanometer scanning 3D printing technology is tens of microns; the resolution ratio of DLP projection type 3D printing is 10-20um; the two-photon 3D printing technology has submicron resolution, but belongs to a serial processing mode, and the efficiency is extremely low. The microlithography based on the photoresist exposure mode is still the mainstream technical means of modern micromachining, and the photoresist material is mature and the process is controllable, so that the microlithography is the highest-precision machining means which can be achieved so far.
The 2D projection lithography has been widely applied in the field of microelectronics, and the 3D topography lithography is still in the initial stage at present, and no mature technology system is formed, and the current progress is as follows:
1. the traditional mask alignment method is used for manufacturing a multi-step structure, the depth of the structure is controlled by combining ion etching, the technological process needs to be aligned for many times, the technological requirement is high, and continuous 3D shapes are difficult to process.
2. A gray mask exposure method adopts the technical scheme that a half-tone mask (half-tone) is manufactured, a transmission light field with gray distribution is generated after irradiation of a mercury lamp light source, and photosensitive is carried out on photoresist to form a 3D surface structure. However, such reticles are difficult to fabricate, have poor structural resolution, are complex in flow, and are very expensive.
3. The moving mask exposure method is suitable for manufacturing regular micro-lens array and other structures.
4. The acousto-optic scanning direct writing method uses single beam direct writing, has low efficiency and also has the problem of figure splicing.
5. The electron beam gray level direct writing method, which represents manufacturers and product models, comprises: the method is extremely low in preparation efficiency of devices with larger breadth, limited by the energy of electron beams, insufficient in 3D shape depth regulation and control capability and only suitable for preparing small-scale 3D shape microstructures.
6. A digital gray scale photoetching method belongs to a micro-nano processing technology developed by combining a gray scale mask and a digital light processing technology, a DMD spatial light modulator is used as a digital mask, a relief microstructure with a continuous three-dimensional surface shape is processed by one-time exposure, and a step splicing method is adopted for a graph with more than one exposure field. The main deficiency is that the gray level modulation capability is limited by the gray level of the DMD, the problem of obvious steps and the problem of splicing seams between fields exist, and the surface type quality of the 3D appearance can be influenced by the uniformity of the light intensity inside the light spot.
In summary, there is a significant gap between the current research situation of 3D topography lithography and the leading edge requirements, and therefore, implementing high-quality lithography methods for arbitrary 3D topography becomes an important and urgent need for microlithography in the related art.
Disclosure of Invention
The invention aims to provide a direct-write photoetching system and a direct-write photoetching method, so as to realize maskless gray-scale photoetching of a three-dimensional shape structure with a complex surface and improve photoetching precision and photoetching efficiency.
According to an object of the present invention, there is provided a direct write lithography system comprising a direct write light source, a movement mechanism, a central controller, a spot pattern input device, and projection optics;
the direct-writing light source is used for providing an initial light beam;
the motion mechanism is used for controlling the projection optical device to scan along a preset path relative to a photoetching piece to be exposed and sending position data of a reference point;
the central controller is used for reading corresponding light spot image data in the light spot graphic file sequence according to the position data and uploading the light spot image data to the light spot graphic input device;
the light spot graph input device is used for modulating the initial light beam provided by the direct-writing light source according to the light spot image data to generate graph light and inputting the graph light into the projection optical device;
and the projection optical device controls the graphic light to project a deformed light spot to the surface of the photoetching piece, and scans along the preset path under the control of the movement mechanism, and the light spot image data changes along with position data in the scanning process to form a preset controllable deformed light spot.
Further, the direct-write lithography system further comprises a three-dimensional topography generating device and a three-dimensional topography analyzing device;
the three-dimensional shape generating device is used for generating three-dimensional shape data;
the three-dimensional topography analysis device is used for generating a light spot graphic file sequence according to the three-dimensional topography data and preset parameters of the direct-writing photoetching system, and the light spot graphic file sequence comprises a coordinate sequence and a light spot image data sequence corresponding to the coordinate sequence.
Further, the inside of the deformed light spot is of fixed light intensity, and the light spot image data comprises a light spot shape; the preset parameters of the direct-write lithography system comprise the preset path, the scanning speed and the fixed light intensity.
Furthermore, the inside of the deformed light spot is gray-scale distribution light intensity, and the light spot image data comprises a light spot shape and light intensity distribution in the light spot; the preset parameters of the direct-write lithography system comprise the preset path and the scanning speed.
Further, the central controller is further configured to transmit a displacement instruction to the moving mechanism, so that the projection optical device performs a three-dimensional movement with respect to the lithography element, and displacement and focusing of the projection optical device are achieved.
The invention also provides a direct-write photoetching method, which comprises the following steps:
s1: generating three-dimensional shape data;
s2: generating a light spot graphic file sequence according to the three-dimensional topography data and preset parameters of a direct-writing photoetching system, wherein the light spot graphic file sequence comprises a coordinate sequence and a light spot image data sequence corresponding to the coordinate sequence;
s3: generating pattern light according to the light spot image data sequence, projecting the pattern light to the surface of a photoetching piece to be exposed to form a deformed light spot, scanning along a preset path, and changing the shape of the deformed light spot along with position data in the scanning process to form a preset controllable deformed light spot.
Further, in the step S3, the intensity distribution of the deformed light spot is also changed with the position data during the scanning.
Further, the step S3 specifically includes:
s31: acquiring position data of a reference point;
s32: reading corresponding light spot image data in the light spot graphic file sequence according to the position data;
s33: generating the pattern light from the spot image data,
s34: projecting the pattern light to the surface of the photoetching piece to form the deformed light spot;
s35: controlling the deformed light spot to perform certain displacement;
and repeating the steps S31 to S35 until the direct-write lithography is finished.
Further, in the step S3, the step of scanning along a preset path specifically includes controlling the deformed light spot to scan along a plurality of preset paths in sequence; the plurality of preset paths are intermittent from head to tail or continuous from head to tail, and the plurality of paths are parallel or crossed.
Further, the projection optical device projects the deformed light spot in a parallel imaging mode.
Further, before the step S3, the method may further include the step of:
providing a substrate;
coating photoresist with corresponding thickness on the surface of the substrate according to the requirement of three-dimensional morphology;
in the step S2, the preset parameter of the direct-write lithography system includes a photoresist exposure sensitivity curve.
The invention provides a direct-write photoetching system and a direct-write photoetching method, which expose the surface of a photoetching piece by adopting deformed light spots with constantly changing shapes and/or light intensity distribution in the dragging scanning process, so that each evaluation point on the photoetching piece is exposed by variable dose, mask-free gray level photoetching of a complex surface three-dimensional shape structure is realized, and photoetching precision and photoetching efficiency are improved.
Drawings
FIG. 1 is a schematic diagram of the shape change of a deformed light spot during a trailing scan and the lithography groove shape of a lithography element in the direct-write lithography system of the present invention.
FIG. 2a is a schematic diagram of the shape of a deformed spot at a certain moment in the direct-write lithography system of the present invention.
FIG. 2b is a schematic cross-sectional view of a deformed spot scanned across the surface of a lithography element at a certain time in the direct write lithography method of the present invention.
FIG. 3 is a schematic diagram of a frame of a direct-write lithography system according to a first embodiment of the present invention.
FIG. 4 is a flowchart illustrating steps of a direct-write lithography method according to a first embodiment of the present invention.
Fig. 5 is a flowchart illustrating a specific step of step S3 in the direct-write lithography method illustrated in fig. 4.
FIGS. 6a to 6c are schematic diagrams illustrating various predetermined paths in the direct-write lithography method according to the first embodiment of the present invention.
Detailed Description
The following detailed description of embodiments of the present invention is provided in connection with the accompanying drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.
The invention provides a direct-write photoetching system and a direct-write photoetching method, which expose the surface of a photoetching piece 20 by adopting a deformed light spot 10 with a shape and/or light intensity distribution which constantly changes in the dragging scanning process, so that each evaluation point on the photoetching piece 20 is exposed by variable dose, and the maskless gray-scale photoetching of a complex surface three-dimensional shape structure is realized.
Referring to fig. 1 and 3, fig. 1 shows the shape change of the deformed spot 10 and the lithography groove profile of the lithography element 20 during the dragging scan according to the present invention. Along the scanning path, the deformed light spots 10 are refreshed at intervals, which are controlled by the central controller 35, for example, frame frequency refreshing at fixed time intervals, or non-equal time intervals according to the requirement of the three-dimensional topography. After each refreshing, the shape of the deformed light spot 10 changes, further, the inside of the deformed light spot 10 is gray-scale distribution light intensity, and after each refreshing, the shape and/or the light intensity distribution of the deformed light spot 10 changes.
Referring to fig. 2a and fig. 2b, fig. 2a shows a schematic shape diagram of the deformed light spot 10 at a certain time, and a projection area generated by the direct-writing optical head of the projection optical device 37 includes a bright area 101 and a light-shielding area 102, and the bright area 101 is referred to as an inner portion of the deformed light spot 10. Figure 2b shows a schematic cross-section of the deformed spot 10 scanned across the surface of the lithography element 20 at a certain point in time. For any evaluation point Q on the surface of the photoetching element 20, the deformed light spot 10 sweeps the evaluation point Q along a certain scanning path and a certain scanning speed, the direct-writing photoetching method regulates and controls the exposure time and/or the light intensity distribution of the front end 11 and the tail end 12 of the deformed light spot 10 sweeping the evaluation point Q, the exposure time and the light intensity distribution influence the exposure of the evaluation point Q, and further the etching depths of a plurality of nearby evaluation points define the photoetching groove shape of the photoetching element 20 at the position. For example, when the deformed light spot 10 scans alongbase:Sub>A path, each point on the inner linebase:Sub>A-base:Sub>A 'sequentially scans the evaluation point Q, and the exposure at the evaluation point Q is affected by the light intensity and the scanning speed of each point on the linebase:Sub>A-base:Sub>A'; when the deformed spot 10 is scanned along another path, the points on the inner line B-B 'are sequentially swept across the evaluation point Q, and the exposure at the evaluation point Q is affected by the intensity and scanning speed of the points on the line B-B'.
Therefore, according to the three-dimensional shape formed by the required lithography, by combining preset parameters such as the scanning path and the scanning speed in the direct writing optical system and matching with factors such as the sensitivity of the lithography part 20 to the exposure, a series of specific two-dimensional light spots can be calculated and designed, and the shapes and/or the light intensities of the light spots have corresponding relations with the (x, y) coordinates passed by the scanning path. The corresponding relation between the shapes and/or light intensities of the series of specific two-dimensional light spots and the position data forms a light spot pattern file sequence. The direct-write lithography system of the present invention generates deformed light spots 10 whose shapes and/or light intensity distributions are constantly changed during the drag scanning process according to the light spot pattern file sequence.
First embodiment
Referring to fig. 3, the direct write lithography system of the present embodiment includes: a three-dimensional topography generating device 31, a three-dimensional topography analyzing device 32, a direct-write light source 33, a moving mechanism 34, a central controller 35, a spot pattern input device 36, and a projection optical device 37. The three-dimensional topography generating device 31, the three-dimensional topography analyzing device 32, and the central controller 35 may be provided in one or more computers or servers.
The three-dimensional topography generating means 31 is used for generating three-dimensional topography data. Three-dimensional topography data including, but not limited to, x, y lateral coordinates and corresponding z-direction height data for each point of the three-dimensional topography is generated by three-dimensional modeling software that derives a common three-dimensional data format for computer analysis, such as STL, 3DS, STP, IGS, OBJ, etc., and is preferably a vector file.
The three-dimensional topography analyzing device 32 is configured to generate a light spot pattern file sequence according to the three-dimensional topography data and preset parameters of the direct-write lithography system, where the light spot pattern file sequence includes a coordinate sequence and a light spot image data sequence corresponding to the coordinate sequence. In this embodiment, the inside of the deformed light spot 10 adopts a fixed light intensity, each light spot image data in the light spot image data sequence includes a light spot shape, and the limiting mode of the light spot shape in the light spot image data is a plurality of coordinates for describing the light spot profile, or binarized light intensity data of each point in a projection area generated by a direct writing optical head. The preset parameters of the direct-write lithography system include, but are not limited to, the preset path P, the scanning speed, and the fixed light intensity. The sequence of light spot pattern files is stored in the memory in sequence after being generated, and the central controller 35 can read, match and the like the sequence of light spot pattern files in the memory.
The direct-write light source 33 is used to provide a starting beam to the spot pattern input device 36. The direct writing light source 33 may be an LED, a semiconductor laser, a solid laser, a gas laser, or the like, preferably a non-coherent continuous light source, which is sensitive to the lithography material on the lithography member 20.
The movement mechanism 34 is used for controlling the projection optics 37 to scan along a predetermined path P relative to the lithographic element 20 to be exposed and for issuing position data. It is noted that the term scanning, movement or displacement in the present invention refers to a relative displacement of the projection optics 37 and the lithographic element 20. Specifically, the moving mechanism 34 includes a first stepping shaft and a first driving motor that drive the projection optical device 37 to move in the horizontal direction, and a second stepping shaft and a second driving motor that drive the projection optical device 37 to move up and down; alternatively, the moving mechanism 34 includes a first stepping shaft and a first driving motor for driving the stage carrying the lithography member 20 to move in the horizontal direction, and a second stepping shaft and a second driving motor for driving the stage to move up and down; a combination of the two motion modes may also be used. The movement of the projection optical device 37 or the stage in the horizontal direction adopts a rectangular coordinate system or a polar coordinate system. The motion mechanism 34 acquires position data by means of laser or ultrasound, etc., which includes, but is not limited to: coordinates of a reference point within the deformed light spot 10, coordinates of a reference point on the projection optical device 37, coordinates of a reference point that moves on the movement mechanism 34, and the like.
The central controller 35 reads the corresponding spot image data in the spot pattern file sequence based on the position data, and uploads the spot image data to the spot pattern input device 36. Specifically, the central controller 35 matches the stored sequence of the light spot pattern file with the position data, reads the light spot shape corresponding to the position data, and controls the light spot pattern input device 36 to generate and refresh the corresponding pattern light. Further, the central controller 35 is also configured to transmit a displacement command to the moving mechanism 34 to move the projection optics 37 in a three-dimensional direction relative to the lithography element 20, so as to achieve displacement and focusing of the projection optics 37.
The light spot pattern input device 36 is configured to modulate the start light beam supplied from the direct-writing light source 33 in accordance with the light spot image data to generate pattern light, and input the pattern light to the projection optical device 37. Spot pattern input device 36 employs a spatial light modulator with a two-dimensional array structure, such as a digital micromirror array (DMD), a Liquid Crystal On Silicon (LCOS), or the like.
The projection optical device 37 is used for controlling the pattern light to project a dynamic deformation structure light spot onto the surface of the lithography element 20, and is driven by the moving mechanism 34 to scan along a preset path P. The projection optics 37 also performs focusing with the aid of the central controller 35 and the movement mechanism 34, and controls the projection area of the shaped deformed spot 10 on the surface of the lithography element 20 by focusing. Since the position data of the reference point is continuously uploaded to the central controller 35 during the scanning process, and the shape of the pattern light is refreshed accordingly, the shape of the deformed light spot 10 changes with the position data, and a preset controllable deformed light spot is formed. In the interval time between the nth (n is a positive integer) refresh and the (n + 1) th refresh, the deformed spot 10 maintains the shape after the nth refresh, and thus the scanning mode of the projection optical device 37 is a dragging step-type scanning. The projection optical device 37 adopts a parallel imaging mode for projection of the deformed light spot 10, for example, a flat field miniature imaging projection optical method is adopted, instead of a serial imaging mode such as an acousto-optic modulation optical method and a galvanometer optical method.
Further, the direct-write lithography system may further include a beam shaper for shaping the starting beam from the direct-write light source 33, the beam shaper being located between the direct-write light source 33 and the spot pattern input device 36.
Referring to fig. 4, the present embodiment further provides a direct write lithography method, including the following steps:
s1: generating three-dimensional topography data;
s2: generating a light spot graphic file sequence according to the three-dimensional topography data and preset parameters of the direct-writing photoetching system, wherein the light spot graphic file sequence comprises a coordinate sequence and a light spot image data sequence corresponding to the coordinate sequence;
s3: generating pattern light according to the light spot image data sequence, projecting the pattern light to the surface of the photoetching piece 20 to be exposed to form a deformed light spot 10, scanning along a preset path P, and changing the shape of the deformed light spot 10 along with position data in the scanning process to form a preset controllable deformed light spot.
Specifically, referring to fig. 5, step S3 includes:
s31: acquiring position data;
s32: reading corresponding light spot image data in the light spot graphic file sequence according to the position data;
s33: generating pattern light from the spot image data,
s34: projecting the pattern light to the surface of the photoetching piece 20 to form a deformed light spot 10;
s35: controlling the deformed light spot 10 to perform certain displacement;
and repeating the steps S31 to S35 until the direct-write lithography is finished.
In step S3, the step of scanning along the preset path P specifically includes controlling the deformed light spot 10 to scan along a plurality of preset paths P in sequence, where the plurality of preset paths P are discontinuous from head to tail or continuous from head to tail, and the plurality of paths are parallel or intersect. Referring to fig. 6a to 6c, three specific examples of the scanning paths are shown, in fig. 6a, the deformed light spot 10 scans along the continuous predetermined path P, and the scanning areas of the direct writing optical head of the projection optical device 37 form the continuous stripe patterns 13 and are spliced without overlapping to form a breadth pattern; in fig. 6b, the deformed light spot 10 scans along a discontinuous preset path P, the scanning area of the direct writing optical head forms a plurality of strip patterns 13, the preset paths P are parallel, and the strip patterns 13 have an overlapping region 14 to form a breadth pattern; in fig. 6c, the deformed light spot 10 scans along a predetermined path P, the predetermined path P is crossed, and the scanning area of the direct writing optical head forms a plurality of strip patterns 13 and is spliced in an overlapping manner to form a web pattern.
Before step S3, the method may further include the steps of:
providing a substrate 21;
coating photoresist 22 with corresponding thickness on the surface of the substrate 21 according to the requirement of three-dimensional morphology;
in step S2, the preset parameters of the direct-write lithography system include an exposure sensitivity curve of the photoresist 22, where the curve is a corresponding relationship between an exposure amount and an exposure sensitivity of the photoresist, and the exposure sensitivity of the photoresist refers to a minimum energy value of light with a certain wavelength required to generate a good pattern on the photoresist 22. Further, the preset parameters of the direct-write lithography system further include the thickness of the photoresist 22, the contrast of the photoresist 22, and the like, and the contrast of the photoresist 22 refers to the gradient of the transition of the photoresist 22 from the exposed region to the non-exposed region.
The method may further include, after the step S3, the steps of: and (3) carrying out chemical processing such as development on the photoetching article 20, graying and removing part of the photoresist 22, wherein the removal depth of the photoresist 22 is related to the exposure obtained by each point on the surface, so that a three-dimensional micro-nano structure graphic master plate with expected three-dimensional appearance is obtained. And then, the method can further comprise the steps of carrying out ion etching, copying, electroplating and the like on the basis of the three-dimensional micro-nano structure graph master mask.
Second embodiment
The embodiment provides a direct-write lithography system and a direct-write lithography method. The difference between the direct-write lithography method of this embodiment and the first embodiment described above is that:
the inside of the deformed light spot 10 is gray distribution light intensity, and light spot image data comprises a light spot shape and light intensity distribution in the light spot. The preset parameters of the direct-write lithography system include a preset path P and a scanning speed, and the preset parameters may further include an exposure sensitivity curve, a thickness, a contrast, and the like of the photoresist 22.
The difference between the direct-write lithography method of this embodiment and the first embodiment is that:
in step S2, a light spot graphic file sequence is generated according to the three-dimensional shape data, the preset path P and the scanning speed, and the light spot graphic file sequence comprises a coordinate sequence, a light spot image data sequence corresponding to the coordinate sequence and a light intensity distribution sequence corresponding to the coordinate sequence.
In step S3, the intensity distribution of the deformed spot 10 also varies with the position data during scanning. Further, in step S32, the step of reading the corresponding spot image data in the spot pattern file sequence according to the position data is specifically to read the corresponding spot shape and the spot internal light intensity distribution in the spot pattern file sequence according to the position data.
In the present embodiment, the deformed light spot 10 of the nth (n is a positive integer) refresh and the deformed light spot 10 of the (n + 1) th refresh may have the same shape and different light intensity distributions, or may have different shapes and different light intensity distributions.
In summary, the present invention provides a direct-write lithography system and a direct-write lithography method, wherein deformed light spots 10 with constantly changing shapes and/or light intensity distributions are adopted to expose the surface of a lithography element 20 in a dragging scanning process, so that each evaluation point on the lithography element 20 is exposed with a variable dose, thereby realizing maskless gray scale lithography.
The technical features of the above embodiments can be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the above embodiments are not described, however, as long as the combinations of the technical features are not contradictory, the scope of the present description should be considered as being described in the present specification.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present invention, and all the changes or substitutions should be covered within the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A direct-write lithography system, comprising a direct-write light source (33), a motion mechanism (34), a central controller (35), a spot pattern input device (36), and projection optics (37);
the direct-write light source (33) is used for providing an initial light beam;
the movement mechanism (34) is used for controlling the projection optical device (37) to scan along a preset path (P) relative to the photoetching piece (20) to be exposed and sending out position data of a reference point;
the central controller (35) is used for reading corresponding light spot image data in a light spot pattern file sequence according to the position data and uploading the light spot image data to the light spot pattern input device (36);
the light spot pattern input device (36) is used for modulating the initial light beam provided by the direct-writing light source (33) according to the light spot image data to generate pattern light, and inputting the pattern light into the projection optical device (37);
the projection optical device (37) controls the pattern light to project a deformation light spot (10) to the surface of the photoetching piece (20), the deformation light spot is scanned along the preset path (P) under the control of the motion mechanism (34), and the light spot image data is changed along with position data in the scanning process to form a preset controllable deformation light spot;
according to the three-dimensional shape formed by the required photoetching, a series of deformed light spots (10) are designed by combining the scanning path, the scanning speed and the sensitivity of the photoetching piece (20) to the exposure in the direct-writing photoetching system, the shapes of the deformed light spots (10) have a corresponding relation with the coordinates passed by the scanning path, and the corresponding relation between the shapes of the series of deformed light spots (10) and the position data forms the light spot graphic file sequence.
2. A direct-write lithography system according to claim 1, characterized in that the direct-write lithography system further comprises a three-dimensional topography generation means (31) and a three-dimensional topography analysis means (32);
the three-dimensional topography generating device (31) is used for generating three-dimensional topography data;
the three-dimensional topography analysis device (32) is used for generating a light spot graphic file sequence according to the three-dimensional topography data and preset parameters of the direct-write lithography system, and the light spot graphic file sequence comprises a coordinate sequence and a light spot image data sequence corresponding to the coordinate sequence.
3. The direct-write lithography system according to claim 1, characterized in that the inside of the deformed spot (10) is of fixed intensity, the spot image data comprising a spot shape; the preset parameters of the direct write lithography system comprise the preset path (P), the scanning speed and the fixed light intensity.
4. The direct-write lithography system according to claim 1, wherein the inside of the deformed light spot (10) is a gray-scale distribution light intensity, and the light spot image data includes a light spot shape and a light intensity distribution within the light spot; the preset parameters of the direct-write lithography system comprise the preset path (P) and the scanning speed.
5. A direct-write lithography system according to claim 1, wherein the central controller (35) is further configured to transmit displacement instructions to the movement mechanism (34) to cause the projection optics (37) to move in three dimensions relative to the lithography element (20) to effect displacement and focusing of the projection optics (37).
6. A direct-write lithography method, comprising the steps of:
s1: generating three-dimensional topography data;
s2: generating a light spot graphic file sequence according to the three-dimensional topography data and preset parameters of a direct-writing photoetching system, wherein the light spot graphic file sequence comprises a coordinate sequence and a light spot image data sequence corresponding to the coordinate sequence;
s3: generating pattern light according to the light spot image data sequence, projecting the pattern light to the surface of a photoetching piece (20) to be exposed to form a deformed light spot (10), scanning along a preset path (P), and changing the shape of the deformed light spot (10) along with position data in the scanning process to form a preset controllable deformed light spot;
according to the three-dimensional shape formed by the required photoetching, a series of deformed light spots (10) are designed by combining a scanning path, a scanning speed and the sensitivity of the photoetching piece (20) to the exposure in the direct-write photoetching system, the shapes of the deformed light spots (10) have corresponding relations with the coordinates passed by the scanning path, and the corresponding relations between the shapes of the series of deformed light spots (10) and the position data form the light spot pattern file sequence.
7. A direct-write lithography method according to claim 6, characterized in that in step S3 the intensity distribution of the deformed spot (10) during scanning also varies with the position data.
8. The direct-write lithography method according to claim 6, wherein said step S3 specifically comprises:
s31: acquiring position data of a reference point;
s32: reading corresponding light spot image data in the light spot graphic file sequence according to the position data;
s33: generating the pattern light according to the spot image data,
s34: projecting the pattern light onto the surface of the piece of lithography (20) to form the deformed light spot (10);
s35: controlling the deformed light spot (10) to perform certain displacement;
and repeating the steps S31 to S35 until the direct-write lithography is finished.
9. The direct-write lithography method according to claim 6, wherein in step S3, the step of scanning along a predetermined path (P) specifically comprises controlling the deformed light spot (10) to scan along a plurality of predetermined paths (P) in a sequential order; the preset paths (P) are discontinuous end to end or continuous end to end, and the paths are parallel or crossed.
10. The direct-write lithography method according to claim 6, further comprising, before the step S3, the steps of:
providing a substrate (21);
coating photoresist (22) with corresponding thickness on the surface of the substrate (21) according to the requirement of three-dimensional topography;
in the step S2, the preset parameter of the direct-write lithography system includes a photoresist exposure sensitivity curve.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201911303595.7A CN112987501B (en) | 2019-12-17 | 2019-12-17 | Direct-write lithography system and direct-write lithography method |
| PCT/CN2020/126362 WO2021120906A1 (en) | 2019-12-17 | 2020-11-04 | Direct-write photoetching system and direct-write photoetching method |
| JP2022513961A JP7345769B2 (en) | 2019-12-17 | 2020-11-04 | Direct writing exposure system and direct writing exposure method |
| KR1020227021405A KR20220106166A (en) | 2019-12-17 | 2020-11-04 | Direct recording photoetching system and direct recording photoetching method |
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| CN201911303595.7A CN112987501B (en) | 2019-12-17 | 2019-12-17 | Direct-write lithography system and direct-write lithography method |
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| Country | Link |
|---|---|
| JP (1) | JP7345769B2 (en) |
| KR (1) | KR20220106166A (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN113934115B (en) * | 2021-10-22 | 2023-10-27 | 合肥芯碁微电子装备股份有限公司 | Method for controlling direct-writing type photoetching machine and direct-writing type photoetching machine |
| CN114114848B (en) * | 2021-10-26 | 2023-12-15 | 江苏迪盛智能科技有限公司 | Control method, device, equipment and storage medium for scanning lithography |
| CN115629480A (en) * | 2022-08-18 | 2023-01-20 | 西北大学 | Laser engraving system and method based on vector diagram structure and light field modulation |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE19626176A1 (en) * | 1996-06-29 | 1998-01-08 | Deutsche Forsch Luft Raumfahrt | Lithography exposure device and lithography method |
| JP3704994B2 (en) * | 1999-02-23 | 2005-10-12 | ノーリツ鋼機株式会社 | Light quantity adjustment method for printing device |
| TW478032B (en) * | 1999-11-04 | 2002-03-01 | Seiko Epson Corp | Method and device for laser plotting, hologram master and the manufacturing method thereof |
| US6730256B1 (en) * | 2000-08-04 | 2004-05-04 | Massachusetts Institute Of Technology | Stereolithographic patterning with interlayer surface modifications |
| CN100561356C (en) * | 2007-05-23 | 2009-11-18 | 芯硕半导体（合肥）有限公司 | Integrative type direct-writing photo-etching method |
| EP2017833A1 (en) * | 2007-07-16 | 2009-01-21 | Nederlandse Organisatie voor toegepast- natuurwetenschappelijk onderzoek TNO | Scanned writing of an exposure pattern on a substrate |
| CN101339300B (en) * | 2008-08-13 | 2010-08-25 | 哈尔滨工业大学 | Double light beam interference adjustable gain laser writing filtering method and apparatus |
| US8465910B2 (en) * | 2010-07-06 | 2013-06-18 | Massachusetts Institute Of Technology | Hybrid lithographic method for fabricating complex multidimensional structures |
| CN102357735B (en) * | 2011-09-22 | 2015-05-13 | 中国航天科技集团公司第五研究院第五一0研究所 | Double-scanning three-dimensional (3D) laser etching method based on controllable profile shape and power distribution of light beams |
| CN102837128B (en) * | 2012-08-28 | 2015-09-23 | 中国科学院光电研究院 | Adopt the laser direct-writing system of processing of liquid crystal light valve shaping |
| CN103744271B (en) * | 2014-01-28 | 2015-10-28 | 苏州苏大维格光电科技股份有限公司 | A kind of laser direct writing system and photoetching method |
| JP6030597B2 (en) * | 2014-04-04 | 2016-11-24 | 株式会社松浦機械製作所 | Three-dimensional modeling apparatus and manufacturing method of three-dimensional shaped object |
| JP6785858B2 (en) * | 2015-11-23 | 2020-11-18 | エヌライト，インコーポレーテッド | Time control on a fine scale for laser machining |
| CN105480939A (en) * | 2015-12-03 | 2016-04-13 | 中国科学院物理研究所 | Preparation method of three-dimensional structure with liquid full super-hydrophobic function |
| CN105700302A (en) * | 2016-03-18 | 2016-06-22 | 天津中精微仪器设备有限公司 | Quick photo-etching system |
-
2019
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-
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| Publication number | Publication date |
|---|---|
| KR20220106166A (en) | 2022-07-28 |
| JP2022547841A (en) | 2022-11-16 |
| JP7345769B2 (en) | 2023-09-19 |
| WO2021120906A1 (en) | 2021-06-24 |
| CN112987501A (en) | 2021-06-18 |
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