CN102357735B - Double-scanning three-dimensional (3D) laser etching method based on controllable profile shape and power distribution of light beams - Google Patents
Double-scanning three-dimensional (3D) laser etching method based on controllable profile shape and power distribution of light beams Download PDFInfo
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Abstract
The invention provides a double-scanning three-dimensional (3D) laser etching method based on controllable cross-section shape and power distribution of light beams, and belongs to the technical field of laser etching. In the method, equivalent laser processing spots with controllable power profile distribution is matched with an optical machine scanning galvanometer so as to carry out double-scanning laser processing on the surface of a workpiece, which can realize the laser etching of a complex 3D microstructure. The double-scanning 3D laser etching method provided by the invention has the beneficial effects of promoting the capability of the existing laser etching technology from a two-dimensional (2D) plane laser etching mode to a 3D any-curve uncovered laser etching mode, and solving the problem of no appropriate processing technology of the 3D microstructure within the size range of 1mu m-1mm, thus having scientific and industrially practical potential.
Description
Technical field
The invention belongs to laser ablation processing technique field, relate to a kind of laser ablation processing method of the 3 D complex structure based on new principle, particularly relate to a kind of two scanning three-dimensional laser ablation processing methods distributed based on controlled light beam shape of cross section and power.
Background technology
Laser ablation processing refers to and utilizes laser to carry out the technology of ablation removal to surface of the work material.Compare with the laser cutting of relative maturity, laser weld and belong to a new field of laser processing, be a kind of surface texture micro-processing technology developed gradually along with the progress of peak value ultra-short pulse laser (nanosecond, psec, femtosecond) technology nearly ten years, its development application is the earliest laser marking.In this technology, laser focusing bundle, at surface scan, etches character and various pattern.The process technology of a kind of plane (two dimension) in essence.
One of micro-electromechanical system (MEMS) (Micro-electromechanical Systems) technology important support technology being considered to 21st century, is similar to the effect of microelectric technique to twentieth century.The manufacture of 3 D stereo and nonplanar micro-structural, micro-part is the key of its development.Up to the present, the typical size in this field is 1 μm ~ 1mm scope, and the material that coverage is very wide.This yardstick is Yan Tai little to conventional machine processing, and for microelectronic technique too large (and microelectronic technique can only carry out the processing of plane (two dimension), is mainly limited to silicon materials), so all inapplicable.The technology that uniquely can be used for this field is at present LIGA technology (Lithography Electroforming Micro Molding).But this technology depends on the synchrotron radiation that massive cyclotron produces, and this huge equipment is also very few in the world.Therefore, a kind of industrial technology of reality cannot be become.
Laser ablation processing is a potential technology that can be used for above-mentioned processing tasks.It is a kind of Flexible Manufacturing Technology, has the flexibility of height, is applicable to the material category had a wide reach, the particularly important is in principle that it possesses the ability at 1 μm ~ 1mm range scale Three-dimension process, although it is also only processed for two dimension at present.The core content of present patent application, proposes a kind of 3 D stereo laser ablation that developed into by two dimensional surface laser ablation exactly and processes and have the method becoming industrial practical technique potentiality.
Summary of the invention
The object of the invention is for problems of the prior art, a kind of two scanning three-dimensional laser ablation processing methods distributed based on controlled light beam section shape and power are provided, its thinking is the method utilizing the directed scan fast in a very little region of low-light spot, form shape and the controlled processing hot spot of power profiles, then make " processing hot spot " carry out rescan with appropriate ways.
Object of the present invention realizes by following scheme:
Utilize orthogonal acousto-optic deflection device by acoustooptic diffraction effect make laser beam one among a small circle in carry out low-angle high frequency sweep by the mode of requirements set, form the equivalent laser hot spot that processing needs, as processing hot spot, guide processing hot spot to carry out rescan with galvanometer system and can produce three-dimensional microstructures.
When practical application, according to the needs of processing tasks, the excitation waveform of setting acousto-optic deflection device and intensity, the waveform needed for outer wave generator produces, thus the certain power needed for obtaining distributes and the hot spot of shape, to meet different processing requests.Specific beam profile can form corresponding Etching profile, therefore, utilizes the hot spot of the distribution of laser galvanometer scanning System guides certain power and shape to carry out rescan, can form more complicated three-dimensional etching structure.
The present invention compared with prior art has following beneficial effect:
(1) the present invention utilizes acousto-optic deflection device orthogonal each other, laser is made to carry out low-angle high frequency sweep, form section shape and the controlled equivalent laser hot spot of power as processing hot spot, processing hot spot is guided to carry out rescan with galvanometer system again, workpiece is formed corresponding three-dimensional microstructures Etching profile, achieve the Direct Laser lithography of three-dimensional microstructures, solve the problem without suitable three-dimensional microstructures process technology in current 1 μm ~ 1mm range scale, there are the potentiality of science and industry practicality.
(2) ability of being processed by current laser ablation rises to stereoscopic three-dimensional arbitrary surface without the direct processing of covering from plane (two dimension), improves the machining accuracy of existing two dimension etching.
(3) can adopt and program controlly automatically to control, there is high degree of flexibility.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of acousto-optic deflection device of the present invention, mechanical galvanometer double scanning laser processing.
Detailed description of the invention
Below by specific embodiment being described further the two scanning three-dimensional laser ablation processing method of the present invention.
With reference to Fig. 1, first by orthogonal for orthogonal acousto-optic scanning deflector 2 delivery outlet being placed in laser instrument 1.Setting target laser facula area is 0.2mm
2triangle hot spot.The excitation waveform (waveform needed for outer wave generator produces) of adjustment X, Y-direction acousto-optic deflection device and the power of laser beam are 15W, and make laser beam carry out low-angle high frequency sweep, just can obtain area is 0.2mm
2, power is 15W and power equally distributed triangle equivalent laser hot spot.Again using equivalent laser hot spot as processing hot spot, utilize the motion track of laser scanning galvanometer system 3 controlled working hot spot after being arranged on acousto-optic deflection device, first on workpiece, initial position is that 0.6mm carries out scanning and etches by the cycle in the horizontal direction; Then Laser Processing hot spot gets back to etching initial position, more vertically carries out scanning etching by same period 0.6mm, namely forms the array of Pyramid.
Claims (1)
1. based on the two scanning three-dimensional laser ablation processing methods that controlled light beam section shape and power distribute, it is characterized in that: utilize two orthogonal each other acousto-optic deflection devices, and first by orthogonal for the orthogonal acousto-optic deflection device delivery outlet being placed in laser instrument; Setting target laser facula area is 0.2mm
2triangle hot spot; Adjustment X, the excitation waveform of Y-direction acousto-optic deflection device and the power of laser beam are 15W, make laser beam carry out low-angle high frequency sweep, and just obtaining area is 0.2mm
2, power is 15W and power equally distributed triangle equivalent laser hot spot; Again using equivalent laser hot spot as processing hot spot, utilize the motion track of the laser scanning galvanometer Systematical control processing hot spot after being arranged on acousto-optic deflection device, first on workpiece, initial position is that 0.6mm carries out scanning and etches by the cycle in the horizontal direction; Then Laser Processing hot spot gets back to etching initial position, more vertically carries out scanning etching by same period 0.6mm, namely forms the array of Pyramid.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201110283637.2A CN102357735B (en) | 2011-09-22 | 2011-09-22 | Double-scanning three-dimensional (3D) laser etching method based on controllable profile shape and power distribution of light beams |
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| CN201110283637.2A CN102357735B (en) | 2011-09-22 | 2011-09-22 | Double-scanning three-dimensional (3D) laser etching method based on controllable profile shape and power distribution of light beams |
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| CN102357735A CN102357735A (en) | 2012-02-22 |
| CN102357735B true CN102357735B (en) | 2015-05-13 |
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Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108716894B (en) * | 2018-04-04 | 2020-04-28 | 杭州电子科技大学 | Non-mechanical laser three-dimensional scanning system based on acousto-optic deflector |
| CN108838551B (en) * | 2018-06-29 | 2019-12-03 | 中国科学院西安光学精密机械研究所 | A kind of three-dimension curved surface laser etching method |
| CN109270763B (en) * | 2018-10-23 | 2020-05-19 | 华中科技大学 | Light beam homogenizer based on acousto-optic deflection |
| CN112987501B (en) * | 2019-12-17 | 2023-01-24 | 苏州苏大维格科技集团股份有限公司 | Direct-write lithography system and direct-write lithography method |
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| JPH067973A (en) * | 1992-06-25 | 1994-01-18 | Fanuc Ltd | Laser beam machine |
| CN1981977A (en) * | 2005-12-15 | 2007-06-20 | 株式会社迪斯科 | Laser beam processing machine |
| CN101116928A (en) * | 2006-08-04 | 2008-02-06 | 株式会社迪思科 | Laser beam irradiation apparatus and laser working machine |
| CN101274394A (en) * | 2007-03-26 | 2008-10-01 | 三菱电机株式会社 | Laser processing device |
| CN101590570A (en) * | 2008-05-26 | 2009-12-02 | 上海市激光技术研究所 | A kind of method of welding tube type heat exchanger by using laser scanning and device |
| JP2010214428A (en) * | 2009-03-17 | 2010-09-30 | Disco Abrasive Syst Ltd | Optical system and laser beam machining apparatus |
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2011
- 2011-09-22 CN CN201110283637.2A patent/CN102357735B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH067973A (en) * | 1992-06-25 | 1994-01-18 | Fanuc Ltd | Laser beam machine |
| CN1981977A (en) * | 2005-12-15 | 2007-06-20 | 株式会社迪斯科 | Laser beam processing machine |
| CN101116928A (en) * | 2006-08-04 | 2008-02-06 | 株式会社迪思科 | Laser beam irradiation apparatus and laser working machine |
| CN101274394A (en) * | 2007-03-26 | 2008-10-01 | 三菱电机株式会社 | Laser processing device |
| CN101590570A (en) * | 2008-05-26 | 2009-12-02 | 上海市激光技术研究所 | A kind of method of welding tube type heat exchanger by using laser scanning and device |
| JP2010214428A (en) * | 2009-03-17 | 2010-09-30 | Disco Abrasive Syst Ltd | Optical system and laser beam machining apparatus |
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