CN112975619A - Grinding process method of silicon carbide plate - Google Patents
Grinding process method of silicon carbide plate Download PDFInfo
- Publication number
- CN112975619A CN112975619A CN201911312938.6A CN201911312938A CN112975619A CN 112975619 A CN112975619 A CN 112975619A CN 201911312938 A CN201911312938 A CN 201911312938A CN 112975619 A CN112975619 A CN 112975619A
- Authority
- CN
- China
- Prior art keywords
- silicon carbide
- carbide plate
- grinding
- grinding wheel
- axis direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 66
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 title claims abstract description 33
- 229910003460 diamond Inorganic materials 0.000 claims abstract description 12
- 239000010432 diamond Substances 0.000 claims abstract description 12
- 239000012530 fluid Substances 0.000 claims abstract description 5
- 238000005507 spraying Methods 0.000 claims abstract description 4
- 239000007767 bonding agent Substances 0.000 claims description 3
- 239000003292 glue Substances 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 239000012188 paraffin wax Substances 0.000 claims description 2
- 230000003746 surface roughness Effects 0.000 abstract description 6
- 239000000126 substance Substances 0.000 description 4
- 238000005498 polishing Methods 0.000 description 3
- 238000003754 machining Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000007123 defense Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000004439 roughness measurement Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Images
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B7/00—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor
- B24B7/20—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground
- B24B7/22—Machines or devices designed for grinding plane surfaces on work, including polishing plane glass surfaces; Accessories therefor characterised by a special design with respect to properties of the material of non-metallic articles to be ground for grinding inorganic material, e.g. stone, ceramics, porcelain
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
- B24B41/068—Table-like supports for panels, sheets or the like
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B47/00—Drives or gearings; Equipment therefor
- B24B47/20—Drives or gearings; Equipment therefor relating to feed movement
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/006—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the speed
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
- B24B49/02—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation according to the instantaneous size and required size of the workpiece acted upon, the measuring or gauging being continuous or intermittent
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Inorganic Chemistry (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Abstract
The invention discloses a grinding process method of a silicon carbide plate, which comprises the following steps of firstly, sticking and fixing the silicon carbide plate on a workbench of a grinding machine; then, grinding the round diamond grinding wheel from the outermost edge of the silicon carbide plate, and simultaneously spraying grinding fluid in the grinding process; receiving to make the worktable move back and forth along the Y-axis direction of the silicon carbide plate, wherein the moving distance is L +3mm each time, and L is the length of the silicon carbide plate; and after the worktable moves once along the Y-axis direction of the silicon carbide plate, the grinding wheel is fed once along the X-axis direction of the silicon carbide plate until the whole plane of the silicon carbide plate is ground. The invention can realize the precision processing of the large-size silicon carbide plate with poor original quality, reduce the surface roughness Ra of the large-size silicon carbide plate from 3.2 mu m to 0.4-0.2 mu m, solve the problem of difficult processing due to high hardness and high brittleness of the silicon carbide and improve the performance of a silicon carbide device.
Description
Technical Field
The invention belongs to the field of machining, and particularly relates to a grinding process method of a silicon carbide plate.
Background
Silicon carbide has excellent physical and chemical properties such as high strength, shock resistance, corrosion resistance, high temperature resistance and the like, and is widely applied to devices such as national defense, military industry and civil high-temperature furnace and kiln components, silicon carbide plates, lining plates, supporting pieces, reflectors and the like. The surface of the silicon carbide plate blank is rough, the roughness Ra is usually 3.2 μm, and the use requirement of a high-performance device is difficult to meet, so that the silicon carbide plate blank needs to be further precisely processed.
At present, the most common processing methods for silicon carbide are chemical mechanical polishing and grinding, but the chemical mechanical polishing can only process silicon carbide wafers with smaller size generally, and the precision of processed blanks is generally nano-scale, so that the method is not suitable for processing silicon carbide plates with larger size and lower precision; the grinding process is mainly directed to the ultra-precision processing of high-precision parts, the removal amount is very small, the efficiency is low, and special grinding paste needs to be prepared. Therefore, the traditional chemical mechanical polishing and grinding processing are not suitable for the precision processing of the silicon carbide plate with lower precision, and are particularly not suitable for the precision processing of the large-size silicon carbide plate.
Disclosure of Invention
The invention aims to provide a grinding process method of a silicon carbide plate, which aims to solve the problem of precision machining of the silicon carbide plate and overcome the defects of the prior art. The invention can realize the precision processing of the large-size silicon carbide plate with poor original quality, and the surface roughness Ra of the large-size silicon carbide plate is reduced from 3.2 mu m to 0.4-0.2 mu m.
In order to achieve the purpose, the invention adopts the following technical scheme: a grinding process method of a silicon carbide plate comprises the following steps:
the method comprises the following steps: sticking and fixing the silicon carbide plate on a workbench of a grinding machine;
step two: grinding the round diamond grinding wheel from the outermost edge of the silicon carbide plate by using a round diamond grinding wheel, and simultaneously spraying grinding fluid in the grinding process;
step three: the worktable moves back and forth along the Y-axis direction of the silicon carbide plate, and the moving distance is L +3mm each time, wherein L is the length of the silicon carbide plate;
step four: after the workbench moves once along the Y-axis direction of the silicon carbide plate, the grinding wheel is fed once along the X-axis direction of the silicon carbide plate until the whole plane of the silicon carbide plate is ground.
Preferably, the silicon carbide plate is fixed by paraffin or common glue.
Preferably, the granularity of the round diamond grinding wheel is 80# -160#, and the bonding agent is metal.
Preferably, the linear speed of the circular diamond grinding wheel is 20-35m/s, the grinding depth is 0.05-0.1 μm, the grinding radial feed is 0.07bs-0.12bs, wherein bs is the width of the grinding wheel, and the axial moving speed of the workbench is 0.4-1.2 m/min.
The invention has the beneficial effects that: the method adopts the diamond grinding wheel to carry out bidirectional circulating grinding on the surface of the silicon carbide plate, solves the problem that the silicon carbide is hard and brittle and is difficult to process, can realize the precision processing of the large-size silicon carbide plate with poor original quality, reduces the surface roughness Ra of the large-size silicon carbide plate from 3.2 mu m to 0.4-0.2 mu m, and reduces the surface roughness of the large-size silicon carbide plate.
Drawings
FIG. 1 is a schematic view of a silicon carbide plate grinding process;
FIG. 2 shows the result of surface roughness measurement after grinding of a silicon carbide plate.
In the figure: 1 grinding wheel, 2 grinding fluids, 3 silicon carbide plates, 4 working tables, bs grinding wheel thickness, b grinding line spacing and L workpiece length.
Detailed Description
The following detailed description of embodiments of the invention refers to the accompanying drawings in which:
a grinding process method of a silicon carbide plate, as shown in fig. 1, comprising the following steps:
the method comprises the following steps: sticking and fixing the silicon carbide flat plate 3 on a workbench 4 of a grinding machine by using common glue;
step two: starting to rotate the circular diamond grinding wheel 1, grinding from a point D at the outermost edge of the silicon carbide plate 3, and simultaneously spraying grinding fluid 2 in the grinding process;
step three: the table is moved back and forth along the Y-axis direction of the silicon carbide plate 3 by a distance L +3mm, where L is the length of the silicon carbide plate 3, and the length L of the silicon carbide plate 3 is 280mm in this example, so that the table 4 is moved by 283mm each time.
Step four: after the worktable 4 moves once along the Y-axis direction of the silicon carbide plate 3, the grinding wheel 1 is fed once along the X-axis direction of the silicon carbide plate 3 until the whole plane of the silicon carbide plate 3 is ground.
Step five: and (3) detaching the ground workpiece 3, cleaning and wiping the workpiece, and finally detecting the ground surface of the workpiece by using a roughness meter, wherein the detection result is shown in figure 2, namely the surface roughness Ra0.2 mu m.
In the embodiment, the used round diamond grinding wheel 1 has a granularity of 120#, and the bonding agent is metal; during grinding, the linear speed of the grinding wheel is 25m/s, the grinding depth is 0.08 mu m, the grinding radial feed b is 5mm, the width bs of the grinding wheel is 50mm, and the axial moving speed of the workbench is 0.8 m/min.
The above is only a specific application example of the present invention, and the protection scope of the present invention is not limited in any way. All the technical solutions formed by equivalent transformation or equivalent replacement fall within the protection scope of the present invention.
Claims (4)
1. A grinding process method of a silicon carbide plate is characterized by comprising the following steps: the method comprises the following steps:
the method comprises the following steps: sticking and fixing the silicon carbide plate on a workbench of a grinding machine;
step two: grinding the round diamond grinding wheel from the outermost edge of the silicon carbide plate by using a round diamond grinding wheel, and simultaneously spraying grinding fluid in the grinding process;
step three: the worktable moves back and forth along the Y-axis direction of the silicon carbide plate, and the moving distance is L +3mm each time, wherein L is the length of the silicon carbide plate;
step four: after the workbench moves once along the Y-axis direction of the silicon carbide plate, the grinding wheel is fed once along the X-axis direction of the silicon carbide plate until the whole plane of the silicon carbide plate is ground.
2. A grinding process for a silicon carbide plate according to claim 1, wherein: the silicon carbide plate is stuck and fixed through paraffin or common glue.
3. A grinding process for a silicon carbide plate according to claim 1, wherein: the granularity of the round diamond grinding wheel is 80# -160#, and the bonding agent is metal.
4. A grinding process for a silicon carbide plate according to claim 1, wherein: the linear speed of the circular diamond grinding wheel is 20-35m/s, the grinding depth is 0.05-0.1 mu m, the grinding radial feed is 0.07b s-0.12b s, wherein b s is the width of the grinding wheel, and the axial moving speed of the workbench is 0.4-1.2 m/min.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911312938.6A CN112975619A (en) | 2019-12-18 | 2019-12-18 | Grinding process method of silicon carbide plate |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201911312938.6A CN112975619A (en) | 2019-12-18 | 2019-12-18 | Grinding process method of silicon carbide plate |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN112975619A true CN112975619A (en) | 2021-06-18 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911312938.6A Pending CN112975619A (en) | 2019-12-18 | 2019-12-18 | Grinding process method of silicon carbide plate |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN112975619A (en) |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003094296A (en) * | 2001-09-18 | 2003-04-03 | Japan Science & Technology Corp | Highly smooth grinding method and device |
| CN1410228A (en) * | 2002-11-12 | 2003-04-16 | 湖南大学 | Method and equipment capable of realizing precise vertical feeding high speed and supper high speed plane grinding |
| JP2003159637A (en) * | 2001-11-27 | 2003-06-03 | Bridgestone Corp | Grinding method for silicon carbide sintered compact |
| CN1947939A (en) * | 2006-11-02 | 2007-04-18 | 大连理工大学 | Processing method for flattening large dimension diamond diaphragm |
| CN101125411A (en) * | 2007-07-30 | 2008-02-20 | 厦门大学 | Parallel grinding and cutting method for non-axial-symmetry and non-ball-surface optical element |
| US20100190414A1 (en) * | 2009-01-27 | 2010-07-29 | Harada Daijitsu | Method of processing synthetic quartz glass substrate for semiconductor |
| CN102501152A (en) * | 2011-11-24 | 2012-06-20 | 华南理工大学 | Integrated superfine, precise and mirror grinding method for surface of micro-structural array |
-
2019
- 2019-12-18 CN CN201911312938.6A patent/CN112975619A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003094296A (en) * | 2001-09-18 | 2003-04-03 | Japan Science & Technology Corp | Highly smooth grinding method and device |
| JP2003159637A (en) * | 2001-11-27 | 2003-06-03 | Bridgestone Corp | Grinding method for silicon carbide sintered compact |
| CN1410228A (en) * | 2002-11-12 | 2003-04-16 | 湖南大学 | Method and equipment capable of realizing precise vertical feeding high speed and supper high speed plane grinding |
| CN1947939A (en) * | 2006-11-02 | 2007-04-18 | 大连理工大学 | Processing method for flattening large dimension diamond diaphragm |
| CN101125411A (en) * | 2007-07-30 | 2008-02-20 | 厦门大学 | Parallel grinding and cutting method for non-axial-symmetry and non-ball-surface optical element |
| US20100190414A1 (en) * | 2009-01-27 | 2010-07-29 | Harada Daijitsu | Method of processing synthetic quartz glass substrate for semiconductor |
| CN102501152A (en) * | 2011-11-24 | 2012-06-20 | 华南理工大学 | Integrated superfine, precise and mirror grinding method for surface of micro-structural array |
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| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20210618 |
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