CN112964374B - Chip working temperature comparison method in light emitting device manufacturing process - Google Patents

Chip working temperature comparison method in light emitting device manufacturing process Download PDF

Info

Publication number
CN112964374B
CN112964374B CN202110223538.9A CN202110223538A CN112964374B CN 112964374 B CN112964374 B CN 112964374B CN 202110223538 A CN202110223538 A CN 202110223538A CN 112964374 B CN112964374 B CN 112964374B
Authority
CN
China
Prior art keywords
wavelength
chip
temperature
channel
light emitting
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110223538.9A
Other languages
Chinese (zh)
Other versions
CN112964374A (en
Inventor
李杨
廖传武
李志超
李浩凡
黄芙蓉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Liaoning Youxinguang Technology Co.,Ltd.
Original Assignee
Liaoning Youxun Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Liaoning Youxun Technology Co ltd filed Critical Liaoning Youxun Technology Co ltd
Priority to CN202110223538.9A priority Critical patent/CN112964374B/en
Publication of CN112964374A publication Critical patent/CN112964374A/en
Application granted granted Critical
Publication of CN112964374B publication Critical patent/CN112964374B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J9/00Measuring optical phase difference; Determining degree of coherence; Measuring optical wavelength
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Nonlinear Science (AREA)
  • Semiconductor Lasers (AREA)
  • Optical Communication System (AREA)

Abstract

The invention provides a chip working temperature comparison method in the manufacturing process of a light emitting device, which comprises the following steps that firstly, a power-on instrument with temperature control is adopted to carry out power-on temperature control on a non-powered chip of the light emitting device, and the light emitted by the chip is transmitted to a detection wavelength of a wavelength meter by using an optical fiber; secondly, a direct current stabilized voltage supply is used to cooperate with software to carry out power-up temperature control on a charged driving chip of the light emitting device, so that the light chip emits light, the light emitted by the chip is transmitted to a wave splitter by optical fibers, and then the wavelength of each channel is detected by a wavelength meter; thirdly, the wavelength of the optical chip obtained by the two methods corresponds to the actual temperature of the optical chip, and the actual working temperature is compared; and fourthly, comparing the actual working temperature of the optical chip with one more channel when the DC stabilized voltage supply is used together with software to carry out power-on temperature control on the electrified driving chip of the light emitting device. The method aims to detect the actual temperature of different temperature control devices and simultaneously power up different numbers of chips in a device during working.

Description

Chip working temperature comparison method in light emitting device manufacturing process
Technical Field
The invention relates to the technical field of manufacturing of optical communication active light emitting devices, in particular to a method for comparing the working temperature of a chip in the manufacturing process of the light emitting device.
Background
The higher the transmission rate, the higher the cost of manufacturing the higher end light emitting device, and the higher the requirements for wavelength and temperature stability during manufacture and use due to the wavelength range and the action of the optical elements therein.
The reason of high cost also includes that most high-end light emission is provided with a temperature control element semiconductor cooler TEC, the whole device needs to be controlled to the same temperature by different methods such as a meter with temperature control or software in the manufacturing and using processes, and the specific working temperature of the chip cannot be directly detected due to the precision degree and the airtight structure of the device.
Taking a 4-channel LANWDM light emitting device as an example, the LANWDM wavelength distribution is 1295.56 + -1.05 nm,1300.05 + -1.05 nm, 1304.58 + -1.05 nm and 1309.14 + -1.05 nm.
The devices include the important optical elements: the combiner is designed to adopt four different filters on the light incident side due to the rule of LANWDM wavelength distribution, and the four filters can only pass through a specified wavelength range through accurate coating, namely the LANWDM wavelength distribution.
Due to the characteristic of the wave combiner, the wavelength of the optical chip of the core component in the device has a change rate of 0.1 nm/DEG C along with the change of the temperature, and if the wavelength of a specific optical chip is deviated from the upper limit or the lower limit, the wavelength of emitted light with the temperature deviated from 1-2 ℃ is beyond the power of the whole channel of the passing range of the wave combiner filter, so that the requirements on the actual temperature accuracy of the optical chip in the device and the difference of different temperature control devices are extremely high.
Disclosure of Invention
In order to solve the technical problems in the prior art, the invention provides a method for comparing the working temperature of chips in the manufacturing process of a light emitting device, which aims to detect the actual temperature of different temperature control devices and the actual temperature of chips which are powered on by different numbers of chips in the device at the same time.
In order to achieve the purpose, the invention adopts the following technical scheme:
a method for comparing the working temperature of chips in the manufacturing process of a light emitting device is disclosed, which comprises the steps of detecting the actual temperature of different temperature control devices and simultaneously electrifying different numbers of chips in the device for working; comprises the following steps:
firstly, a power-on instrument with temperature control is adopted to carry out power-on temperature control on a non-powered chip of a light emitting device, the positive electrode and the negative electrode of an optical chip are directly powered on to enable the optical chip to emit light, and the light emitted by the chip is transmitted to a wavelength meter to detect wavelength by using optical fibers;
secondly, a DC stabilized voltage supply is used to cooperate with software to carry out power-up temperature control on a charged driving chip of the light emitting device, namely, the electric chip is driven and then the optical chip is indirectly powered up to emit light, the light emitted by the chip is transmitted to a wave splitter by optical fibers and then the wavelength of each channel is detected by a wavelength meter;
thirdly, the wavelength of the optical chip obtained by the two methods corresponds to the actual temperature of the optical chip, and the actual working temperature is compared;
and fourthly, comparing the actual working temperature of the optical chip with one more channel when the DC stabilized voltage supply is used together with software to carry out power-on temperature control on the electrified driving chip of the light emitting device.
Furthermore, the same light emitting device is used for multiple times of detection, the temperature is controlled to be the same at each time, when two different types of power-on temperature control are carried out, the test is carried out on the power-on of a certain channel at each time for wavelength comparison, wavelength data are obtained, and whether the actual working temperatures of the optical chips are different or not can be observed by observing the two power-on modes when the temperature control is the same.
Further, when the temperature is controlled by the DC stabilized power supply and the software, the adjusting software controls the temperature of the device to be the set temperature, and then the wavelength of one channel is read out according to the following conditions:
1) the emergent light of the channel of the wave separator is connected into a wavelength meter to detect the emergent light wavelength of the channel;
2) independently powering up the channel to read the wavelength, and then randomly powering up a certain channel to simultaneously power up two channels to read the wavelength of the channel;
3) then, the three channels are electrified to read the channel wavelength, and the four channels are electrified to read the channel wavelength;
4) and repeating the steps, finally, simultaneously powering up all channels, and reading the wavelength of the channel.
Compared with the prior art, the invention has the beneficial effects that:
the method for comparing the working temperature of the chips in the manufacturing process of the light emitting device can detect the actual temperature of different temperature control devices and the actual temperature of different numbers of chips in the device when the chips are powered on simultaneously, and can realize the comparison of the actual temperature of different temperature control devices and the actual temperature of different numbers of chips in the device when the chips are powered on simultaneously.
Drawings
Fig. 1 is a diagram of the internal structure of an unpowered driver chip of a light emitting device employed in an embodiment of the present invention;
FIG. 2 is a diagram showing the electrical temperature control mode and the chip wavelength detection mode of the device with the internal structure shown in FIG. 1;
FIG. 3 is a diagram of an internal structure of a powered driver chip according to an embodiment of the present invention;
FIG. 4 shows the electrical temperature control mode and the chip wavelength detection mode of the device with the internal structure shown in FIG. 3.
Detailed Description
The following detailed description of the present invention will be made with reference to the accompanying drawings.
A method for comparing the working temperature of chips in the manufacturing process of a light emitting device is disclosed, which comprises the steps of detecting the actual temperature of different temperature control devices and simultaneously electrifying different numbers of chips in the device for working; comprises the following steps:
firstly, a power-on instrument with temperature control is adopted to carry out power-on temperature control on a non-powered chip of a light emitting device, the positive electrode and the negative electrode of an optical chip are directly powered on to enable the optical chip to emit light, and the light emitted by the chip is transmitted to a wavelength meter to detect wavelength by using optical fibers;
secondly, a DC stabilized voltage supply is used to cooperate with software to carry out power-up temperature control on a charged driving chip of the light emitting device, namely, the electric chip is driven and then the optical chip is indirectly powered up to emit light, the light emitted by the chip is transmitted to a wave splitter by optical fibers and then the wavelength of each channel is detected by a wavelength meter;
thirdly, the wavelength of the optical chip obtained by the two methods corresponds to the actual temperature of the optical chip, and the actual working temperature is compared;
and fourthly, comparing the actual working temperature of the optical chip with one more channel when the DC stabilized voltage supply is used together with software to carry out power-on temperature control on the electrified driving chip of the light emitting device.
The same light emitting device is used for multiple times of detection, the temperature is controlled to be the same at each time, when two different power-on temperature control modes are adopted, the test is carried out on the power-on of a certain channel at each time for wavelength comparison, the wavelength data is obtained, and whether the actual working temperatures of the optical chips are different or not can be observed by observing the two power-on modes when the temperature control modes are the same.
When the direct current stabilized voltage power supply is used for being matched with software to power up and control the temperature, the adjusting software controls the temperature of the device to be the set temperature, and then the wavelength of one channel is read out under the following conditions:
1) the emergent light of the channel of the wave separator is connected into a wavelength meter to detect the emergent light wavelength of the channel;
2) independently powering up the channel to read the wavelength, and then randomly powering up a certain channel to simultaneously power up two channels to read the wavelength of the channel;
3) then, the three channels are electrified to read the channel wavelength, and the four channels are electrified to read the channel wavelength;
4) and repeating the steps, finally, simultaneously powering up all channels, and reading the wavelength of the channel.
The specific embodiment is as follows:
firstly, adopting a power-on instrument with temperature control to carry out power-on temperature control on a non-powered chip of a light emitting device, and detecting wavelength by using a wavelength meter;
as shown in fig. 1, in order to obtain the internal structure of the non-powered driving chip of the light emitting device adopted in the embodiment of the present invention, 1 is an optical chip with a center wavelength of 1295.56, 2 is an optical chip with a center wavelength of 1300.05, 3 is an optical chip with a center wavelength of 1305.58, 4 is an optical chip with a center wavelength of 1309.14, and 1, 2, 3, and 4 emit light as resonant divergent light with a certain divergence angle; 5. 6, 7 and 8 are 4 collimating lenses which are used for coupling the divergent light emitted by 1, 2, 3 and 4 into 4 paths of collimated light beams; the optical combiner is 9, the light incidence side is designed to adopt four different filter plates (9.1, 9.2, 9.3 and 9.4), the four filter plates can only pass through the wavelength in a specified range through precise coating, light with different wavelengths in each channel is transmitted in respective fixed reflection paths, a thick line area 3/4 on the rightmost upper side of the optical combiner is finely coated with a reflection film, light beams incident on the 9.1, 9.2 and 9.3 filter plates can be reflected as shown by a dotted line in figure 1, the incident light on the 9.4 filter plate does not need to be reflected, no reflection film exists in a 1/4 area on the bottommost side, and the four light beams are emitted out at the position. The semiconductor cooler TEC 11 is designed to have a refrigerating surface on the upper surface, the four optical chips are mounted on the upper surface of the TEC to realize temperature control, and the thermistor 12 detects the temperature of the upper surface of the TEC.
As shown in fig. 2, when the chip of the light emitting device in fig. 1 is used for household appliances, it is equivalent to directly electrifying the positive and negative electrodes of the optical chip to make the optical chip emit light, and transmitting the light emitted by the chip to the wavelength meter to detect the wavelength by using the optical fiber.
Secondly, a direct current stabilized power supply is used to cooperate with software to carry out power-on temperature control on a charged driving chip of the light emitting device, and the charged driving chip is transmitted to the wave separator and then the wavelength of each channel is detected by the wavelength meter;
as shown in fig. 3, the internal structure of the charged driving chip adopted in the embodiment of the present invention is the same as the internal optical path structure of the uncharged driving chip in fig. 1, and the power-up mode is different, where 10 is the driving electric chip and is powered up.
As shown in fig. 4, when the chip of the light emitting device in fig. 3 is powered on and controlled by a dc regulated power supply in cooperation with software, the power-on and temperature-control mode and the chip wavelength detection mode are the modes shown in fig. 4, that is, the optical chip is powered on indirectly after the electric chip is driven, so that the optical chip emits light, the light emitted from the chip is transmitted to the wavelength splitter by using the optical fiber, and then the wavelength of each channel is detected by using the wavelength meter.
Thirdly, comparing the detection process and the data 1;
the same device is used, the temperature is controlled to the same temperature every time, only one channel is electrified every time to carry out wavelength comparison when two different structures are tested, and wavelength data can be obtained to observe whether the actual working temperatures of the optical chip are different or not when the temperature control is the same in the two electrifying modes.
In the manufacturing process, when the device structure is shown in fig. 1, the power-on mode shown in fig. 2 is used at the front end of the manufacturing process, the temperature of the device is controlled to 56 ℃ by adjusting the power-on instrument with the temperature control, and each channel is powered on independently to obtain a group of wavelength data.
Back-end fabrication when the device structure is as in fig. 3, the power-up mode of fig. 4 is used, the device temperature is controlled at 56 ℃ by the adjusting software, each channel is independently powered up, and the channel powered up at the outgoing end of the wave splitter is respectively detected by the wavelength meter to obtain a group of wavelength data.
Comparing the wavelength data measured by two power-on modes of the same device with the temperature difference of the two power-on modes.
Power-on mode Temperature of Channel 1 wavelength Channel 2 wavelength Channel 3 wavelength Channel 4 wavelength
Temperature-controlled power-up instrument 56℃ 1294.96 1300.37 1304.93 1309.07
Software power-up 56℃ 1295.00 1300.41 1304.94 1309.09
And (4) conclusion: the wavelength difference of the two power-up modes is less than 0.1nm, the change rate of the wavelength of the optical chip along with the temperature is 0.1 nm/DEG C, namely the working temperature of the optical chip of the two power-up modes is less than 1 ℃.
Fourthly, comparing the detection process with the data 2;
rear-end manufacturing process when the device structure is as shown in fig. 3, use the power-up mode of fig. 4, adjust the software to control the device temperature at 56 ℃, will divide the channel 3 emergent light of the wave separator to insert into the wavelength meter and survey the channel 3 and emit the light wavelength, power up and read the wavelength to the channel 3 alone, and then power up and realize that power up and read the wavelength channel 3 to two channels at the same time to a certain channel at will, power up and read the channel 3 wavelength to three channels at the same time, power up and read the channel 3 wavelength to four channels at the same time.
Rear-end manufacturing process when the device structure is as shown in fig. 3, the power-on mode shown in fig. 4 is used, adjusting software controls the temperature of the device to 56 ℃, emergent light of a channel 4 of a wave splitter is connected to the light-emitting wavelength of a detection channel 4 of a wavelength meter, the channel 4 is independently powered on to read the wavelength, then a certain channel is powered on randomly to realize that two channels are powered on to read the wavelength channel 4 at the same time, three channels are powered on to read the wavelength of the channel 4 at the same time, and four channels are powered on to read the wavelength of the channel 4 at the same time.
Figure BDA0002955830240000051
And (4) conclusion: in the power-up mode, the wavelength of the chip is increased by 0.1nm every time one channel is opened, the change rate of the wavelength of the optical chip along with the temperature is 0.1 nm/DEG C, namely the actual working temperature of the optical chip is increased by about 1 ℃ every time one channel is opened, and the 3 ℃ error is eliminated in the process of simultaneously opening four channels, so that the wavelength and power errors among the processes are avoided.
The above embodiments are implemented on the premise of the technical solution of the present invention, and detailed embodiments and specific operation procedures are given, but the scope of the present invention is not limited to the above embodiments. The methods used in the above examples are conventional methods unless otherwise specified.

Claims (1)

1. A method for comparing the working temperature of chips in the manufacturing process of a light emitting device is characterized in that the method is a method for comparing the actual temperature of optical chips when different temperature control equipment is adopted to power up and control the temperature of the light emitting device and when different numbers of optical chips in the light emitting device are powered up and work at the same time; comprises the following steps:
1) the light emitting device without the electric driving chip is electrified and controlled in temperature by adopting an electrifying instrument with temperature control, the anode and the cathode of the optical chip are electrified directly, so that the optical chip emits light, and the light emitted by the chip is transmitted to the wavelength meter for detecting the wavelength by using optical fibers;
2) the light emitting device of the charged driving chip is electrified and controlled by using a direct current stabilized power supply and software, namely, the light emitting device is electrified indirectly after driving the electric chip to enable the light emitting chip to emit light, the light emitting chip is transmitted to the wave separator by using optical fibers, and then the wavelength of each channel is detected by using the wavelength meter;
3) the wavelengths of the optical chips obtained by the two methods correspond to the actual temperature of the optical chips, and the actual working temperature is compared;
the same light emitting device is used for multiple detections, the temperature is controlled to be the same temperature every time, when two different power-on temperature control modes are adopted, only one channel is powered on every time for wavelength comparison through the detection, wavelength data are obtained, and whether the actual working temperatures of the optical chips are different can be observed when the temperature control modes are the same;
4) when the light emitting device of the charged driving chip is electrified and controlled by using a direct current stabilized power supply and software, comparing the actual working temperature of the optical chip with one more channel;
when the direct current stabilized voltage power supply is used for being matched with software to power up and control the temperature, the adjusting software controls the temperature of the device to be the set temperature, and then the wavelength of one channel is read out under the following conditions:
1) the emergent light of the channel of the wave separator is connected into a wavelength meter to detect the emergent light wavelength of the channel;
2) independently powering up the channel to read the wavelength, and then randomly powering up a certain channel to simultaneously power up two channels to read the wavelength of the channel;
3) then, the three channels are electrified to read the channel wavelength, and the four channels are electrified to read the channel wavelength;
4) and repeating the steps, finally, simultaneously powering up all channels, and reading the wavelength of the channel.
CN202110223538.9A 2021-03-01 2021-03-01 Chip working temperature comparison method in light emitting device manufacturing process Active CN112964374B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110223538.9A CN112964374B (en) 2021-03-01 2021-03-01 Chip working temperature comparison method in light emitting device manufacturing process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110223538.9A CN112964374B (en) 2021-03-01 2021-03-01 Chip working temperature comparison method in light emitting device manufacturing process

Publications (2)

Publication Number Publication Date
CN112964374A CN112964374A (en) 2021-06-15
CN112964374B true CN112964374B (en) 2022-04-05

Family

ID=76275957

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110223538.9A Active CN112964374B (en) 2021-03-01 2021-03-01 Chip working temperature comparison method in light emitting device manufacturing process

Country Status (1)

Country Link
CN (1) CN112964374B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114285467B (en) * 2021-12-29 2022-12-20 辽宁优迅科技有限公司 Method and system for wavelength matching of multichannel transmitting chip

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105223663B (en) * 2015-10-30 2017-10-03 武汉光迅科技股份有限公司 A kind of adjustable BOSA devices of bi-directional wavelength
CN105553561A (en) * 2015-12-24 2016-05-04 武汉光迅科技股份有限公司 2x100G optical transceiver module
CN106656347B (en) * 2016-12-26 2019-03-19 武汉光迅科技股份有限公司 It is a kind of for controlling the method and device of light emission component wavelength
CN106684703B (en) * 2017-03-08 2019-12-31 成都优博创通信技术股份有限公司 TWDM ONU wavelength control method and system and turn-off depth control circuit
CN108614332A (en) * 2018-07-24 2018-10-02 大连优迅科技有限公司 A kind of multichannel light high-speed transmission sending device
CN208580228U (en) * 2018-07-24 2019-03-05 大连优迅科技有限公司 A kind of multichannel light high-speed transmission sending device

Also Published As

Publication number Publication date
CN112964374A (en) 2021-06-15

Similar Documents

Publication Publication Date Title
CN112964374B (en) Chip working temperature comparison method in light emitting device manufacturing process
CN116754068A (en) Connected epitaxial optical sensing system
CN110429466A (en) A kind of high-power semiconductor laser real-time detecting system
US6836321B2 (en) Testing bottom-emitting VCSELs
KR20130121896A (en) Laser characterization system and process
JP2007514165A (en) Semiconductor array inspection equipment
US20160197453A1 (en) System, method and fixture for performing both optical power and wavelength measurements of light emitted from a laser diode
Haghighi et al. 40 Gbps with electrically parallel triple and septuple 980 nm VCSEL arrays
CN101504477A (en) Optical transmission module
CN117039610B (en) Laser driving circuit and driving method, lighting system and laser radar
CN112577647A (en) Stress test system and test method for semiconductor laser chip
US20030011357A1 (en) Bar tester
Jewell et al. 1310nm VCSELs in 1-10Gb/s commercial applications
US20050025420A1 (en) Optical sub-assembly laser mount having integrated microlens
US6830940B1 (en) Method and apparatus for performing whole wafer burn-in
CN218956062U (en) Laser chip test system
CN114144950B (en) Semiconductor laser device
JPH072933U (en) Semiconductor laser reliability test equipment
CN112636865A (en) DWDM optical module originating debugging method
CN209388050U (en) Based on biprism to and cylindrical lens beam shaping system
CN218352505U (en) Multi-laser performance parameter automatic calibration platform
CN115267988B (en) Lens coupling method
CN106370963A (en) Automatic aging system and method for optical active device
CN113125919A (en) Photosensitive diode chip detection device for laser
Grabherr et al. 120 Gbps VCSEL arrays: fabrication and quality aspects

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant
CP01 Change in the name or title of a patent holder

Address after: No. 262, Yueling Road, high tech Zone, Anshan City, Liaoning Province 114000

Patentee after: Liaoning Youxinguang Technology Co.,Ltd.

Address before: No. 262, Yueling Road, high tech Zone, Anshan City, Liaoning Province 114000

Patentee before: LIAONING YOUXUN TECHNOLOGY CO.,LTD.

CP01 Change in the name or title of a patent holder