CN112951844A - Standard unit library of FDSOI device - Google Patents
Standard unit library of FDSOI device Download PDFInfo
- Publication number
- CN112951844A CN112951844A CN202110076200.5A CN202110076200A CN112951844A CN 112951844 A CN112951844 A CN 112951844A CN 202110076200 A CN202110076200 A CN 202110076200A CN 112951844 A CN112951844 A CN 112951844A
- Authority
- CN
- China
- Prior art keywords
- standard cell
- fdsoi
- standard
- cell library
- library
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000034 method Methods 0.000 claims description 19
- 230000003247 decreasing effect Effects 0.000 abstract description 2
- 239000004065 semiconductor Substances 0.000 description 11
- 239000000758 substrate Substances 0.000 description 10
- 239000002184 metal Substances 0.000 description 7
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 239000012212 insulator Substances 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052681 coesite Inorganic materials 0.000 description 1
- 229910052906 cristobalite Inorganic materials 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 229910052682 stishovite Inorganic materials 0.000 description 1
- 229910052905 tridymite Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110076200.5A CN112951844A (en) | 2021-01-20 | 2021-01-20 | Standard unit library of FDSOI device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN202110076200.5A CN112951844A (en) | 2021-01-20 | 2021-01-20 | Standard unit library of FDSOI device |
Publications (1)
Publication Number | Publication Date |
---|---|
CN112951844A true CN112951844A (en) | 2021-06-11 |
Family
ID=76235639
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN202110076200.5A Pending CN112951844A (en) | 2021-01-20 | 2021-01-20 | Standard unit library of FDSOI device |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN112951844A (en) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140176216A1 (en) * | 2012-12-26 | 2014-06-26 | Commissariat à I'énergie atomique et aux énergies alternatives | Integrated circuit comprising a clock tree cell |
US20170104005A1 (en) * | 2015-09-21 | 2017-04-13 | Globalfoundries Inc. | Contacting soi substrates |
US20190147948A1 (en) * | 2017-11-13 | 2019-05-16 | International Business Machines Corporation | Enhanced fdsoi physically unclonable function |
-
2021
- 2021-01-20 CN CN202110076200.5A patent/CN112951844A/en active Pending
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20140176216A1 (en) * | 2012-12-26 | 2014-06-26 | Commissariat à I'énergie atomique et aux énergies alternatives | Integrated circuit comprising a clock tree cell |
US20170104005A1 (en) * | 2015-09-21 | 2017-04-13 | Globalfoundries Inc. | Contacting soi substrates |
US20190147948A1 (en) * | 2017-11-13 | 2019-05-16 | International Business Machines Corporation | Enhanced fdsoi physically unclonable function |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100530305B1 (en) | Vertical mosfet sram cell | |
CN103310834B (en) | For structure and the method for SRAM circuit | |
US8436405B2 (en) | ROM cell circuit for FinFET devices | |
US7078766B2 (en) | Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents | |
US7378710B2 (en) | FinFET SRAM cell using inverted FinFET thin film transistors | |
US8349670B2 (en) | Selective floating body SRAM cell | |
US7064391B1 (en) | Bond and back side etchback transistor fabrication process | |
US6903419B2 (en) | Semiconductor storage device and semiconductor integrated circuit | |
TWI638432B (en) | Integrated circuit chip, semiconductor device and forming method thereof | |
US8587062B2 (en) | Silicon on insulator (SOI) field effect transistors (FETs) with adjacent body contacts | |
US11776609B2 (en) | Memory-element-including semiconductor device | |
JP2001358233A (en) | Semiconductor integrated circuit device and its manufacturing method | |
CN104409487A (en) | Bidirectional breakdown protection double-gate insulation tunneling enhancement transistor on bulk silicon and manufacture method of transistor | |
EP1586108A4 (en) | Finfet sram cell using inverted finfet thin film transistors | |
CN101764102B (en) | Method for manufacturing silicon-on-insulator (SOI) complementary metal oxide semiconductor (CMOS) device with vertical gate structure | |
CN1992280A (en) | Static random access memory formed on PD SOI substrate and manufacturing method thereof | |
CN107221558B (en) | SOI (silicon on insulator) layer variable-doping BCD (Bipolar complementary Metal oxide semiconductor) device and manufacturing method thereof | |
CN112951844A (en) | Standard unit library of FDSOI device | |
CN109524355A (en) | A kind of structure and forming method of semiconductor devices | |
JPH07335837A (en) | Semiconductor device and logic circuit | |
CN102856357B (en) | Heterojunction 1T-DRAM (One Transistor Dynamic Random Access Memory) structure based on buried layer N-type trap and preparation method thereof | |
US6281550B1 (en) | Transistor and logic circuit of thin silicon-on-insulator wafers based on gate induced drain leakage currents | |
US8437184B1 (en) | Method of controlling a vertical dual-gate dynamic random access memory | |
CN109545785B (en) | Semiconductor device structure and preparation method | |
US7002213B2 (en) | Transistor and logic circuit on thin silicon-on-insulator wafers based on gate induced drain leakage currents |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220810 Address after: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant after: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Address before: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant before: Guangdong Dawan District integrated circuit and System Application Research Institute Applicant before: AoXin integrated circuit technology (Guangdong) Co.,Ltd. |
|
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20240801 Address after: Room 710, Jianshe Building, 348 Kaifa Avenue, Huangpu District, Guangzhou City, Guangdong Province 510730 Applicant after: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. Country or region after: China Address before: 510535 building a, 136 Kaiyuan Avenue, Guangzhou Development Zone, Guangzhou City, Guangdong Province Applicant before: Guangdong Dawan District integrated circuit and System Application Research Institute Country or region before: China Applicant before: Ruili flat core Microelectronics (Guangzhou) Co.,Ltd. |