CN112951816A - Diode, design method of diode and photovoltaic module - Google Patents

Diode, design method of diode and photovoltaic module Download PDF

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Publication number
CN112951816A
CN112951816A CN202110435781.7A CN202110435781A CN112951816A CN 112951816 A CN112951816 A CN 112951816A CN 202110435781 A CN202110435781 A CN 202110435781A CN 112951816 A CN112951816 A CN 112951816A
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Prior art keywords
diode
sheet
bottom plate
crystal grain
package structure
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CN202110435781.7A
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Chinese (zh)
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丁忠军
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Yangzhou Hy Technology Development Co Ltd
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Yangzhou Hy Technology Development Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/07—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00
    • H01L25/072—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L29/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/044—PV modules or arrays of single PV cells including bypass diodes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

The invention discloses a diode, a design method of the diode and a photovoltaic module, wherein the diode comprises: a base plate; the connecting piece is arranged on the bottom plate; two crystal grains, wherein one crystal grain is arranged on the connecting piece, and the other crystal grain is arranged on the bottom plate; one end of the jumper is connected with the upper part of the crystal grain positioned on the connecting piece, and the other end of the jumper is connected with the bottom plate. The design method of the diode comprises the following steps: a step of setting the total area and a step of setting the specification of a single crystal grain. The photovoltaic module comprises the diode, and the technical problems that the diode in the prior art has poor heat dissipation effect under a high-power photovoltaic module and the requirement on a packaging process is high are solved.

Description

Diode, design method of diode and photovoltaic module
Technical Field
The invention relates to the technical field of diodes, in particular to a diode, a design method of the diode and a photovoltaic module.
Background
In the photovoltaic power generation system group, since the photovoltaic bypass diode is the heart of the photovoltaic module, the stability of the photovoltaic bypass diode bears the safety of the power system in long-term operation and the service life of the power system (the quality of parts of the photovoltaic system is guaranteed to be 25 years). Along with the power requirement of the photovoltaic module, the power of the photovoltaic module is increased by increasing the current, and the current market requirement is advanced to 25-30A; the current of the bypass diode is increased to match a high-power photovoltaic module; then, the package process has reached a bottleneck by dissipating heat under a larger current.
Disclosure of Invention
The invention aims to provide a diode, a design method of the diode and a photovoltaic module, and solves the technical problems that in the prior art, the diode module has poor heat dissipation effect under high power and the requirement of a packaging process is high.
The embodiment of the application discloses diode packaging structure includes:
a base plate;
the connecting piece is arranged on the bottom plate;
two crystal grains, wherein one crystal grain is arranged on the connecting piece, and the other crystal grain is arranged on the bottom plate;
and one end of the jumper is connected with the upper part of the crystal grain positioned on the connecting piece, and the other end of the jumper is connected with the bottom plate.
According to the embodiment of the application, the two crystal grains are connected in series to meet the power requirement of a subsequent photovoltaic assembly, and the shell temperature of each crystal grain is reduced simultaneously, so that the service life cycle of the crystal grain is prolonged, and the stable operation of a terminal photovoltaic power station is ensured.
On the basis of the technical scheme, the embodiment of the application can be further improved as follows:
furthermore, the bottom plate is a conducting strip, the jumper is a metal jumper, and the beneficial effect of the step is that the two crystal grains are conveniently connected in series through the jumper.
Further, the connecting piece is:
an insulating sheet;
two pressure welding sheetmetals assemble respectively in the upper and lower both sides of insulating piece, wherein one the pressure welding piece with the bottom plate is connected, adopts the beneficial effect of this step to be convenient for the welding of connecting piece through the sheetmetal of two pressure welding.
The step of bonding the metal sheet to the base plate comprises a base plate, a crystal grain arranged on the base plate, two outgoing lines and a bonding metal sheet, wherein the crystal grain is arranged on the base plate, the two outgoing lines are connected with the upper portion of the crystal grain, and the other outgoing lines are connected with the bonding metal sheet arranged above the insulating sheet.
Furthermore, the insulating sheet is a ceramic sheet or a high polymer material or nylon or a high resin sheet, and the insulating sheet has the advantage of being convenient for realizing insulation between two crystal grains.
Furthermore, the orthographic projection surface of the insulating sheet covers the orthographic projection surface of the pressure welding metal sheet, and the beneficial effect of the step is that the separation of the pressure welding metal sheet is completed through the insulating sheet.
Furthermore, the side of bottom plate is provided with partial pressure section.
The embodiment of the application discloses a diode which is prepared by adopting the diode packaging structure.
The embodiment of the application discloses a design method of a diode, which comprises the following steps: a total area setting step of setting the total area of the crystal grains of the diode according to the set value of the allowable current of the diode;
and a single crystal grain specification setting step, wherein two crystal grains with the specification area being half of the total area are selected to be connected in series to complete assembly.
The embodiment of the application also discloses a photovoltaic module which comprises a plurality of diodes.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
1. according to the embodiment of the application, the original large-area crystal grains are replaced by the two small-area crystal grains, so that the temperature (Tj) of the crystal grains is reduced, and the photovoltaic bypass diode is conveniently formed by subsequent packaging.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 is a schematic structural diagram of a diode according to an embodiment of the invention;
fig. 2 is a schematic structural diagram of a diode connection component according to an embodiment of the invention;
reference numerals:
1-a bottom plate; 2-a connector; 3-crystal grains; 4-jumper wire; 5-leading-out wire; 6-partial pressure section;
201-an insulating sheet; 202-pressure welding the metal sheets.
Detailed Description
Embodiments of the present invention will be described in detail below with reference to the accompanying drawings. The following examples are only for illustrating the technical solutions of the present invention more clearly, and therefore are only examples, and the protection scope of the present invention is not limited thereby.
It is to be noted that, unless otherwise specified, technical or scientific terms used herein shall have the ordinary meaning as understood by those skilled in the art to which the invention pertains.
In the description of the present application, it is to be understood that the terms "upper", "lower", and the like, indicate orientations or positional relationships based on those shown in the drawings, are merely for convenience in describing the present invention and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.
In this application, unless expressly stated or limited otherwise, the terms "mounted," "connected," "upper," "lower," "connected," "secured," "leading," "trailing," and the like are to be construed broadly and include, for example, fixed connections, removable connections, or integral connections; can be mechanically or electrically connected; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
Example (b):
as shown in fig. 1-2, an embodiment of the present application discloses a diode package structure, including:
the bottom plate 1, specifically, the bottom plate 1 is a bottom conducting strip for conduction;
the connecting piece 2 is arranged on the bottom plate 1, and the connecting piece 2 is used for realizing the separation and subsequent series connection of two crystal grains;
two crystal grains 3, wherein one crystal grain 3 is arranged on the connecting piece 2, and the other crystal grain 3 is arranged on the bottom plate 1;
one end of the jumper wire 4 is connected with the upper part of the crystal grain positioned on the connecting piece 2, the other end of the jumper wire 4 is connected with the bottom plate 1, and the jumper wire 4 can realize the conduction of the anode of one crystal grain 3 and the cathode of the other crystal grain 3.
The bottom plate 1 is a conducting strip, the jumper wire 4 is a metal jumper wire, the metal jumper wire is of a step type, the conducting part of the pressure welding metal sheet 202 is avoided, and conduction between crystal grains can be achieved, wherein the metal jumper wire can be an aluminum jumper wire or a copper jumper wire.
Wherein, the connecting piece 2 is:
an insulating sheet 201;
two pressure welding metal sheets 202 respectively assembled on the upper and lower sides of the insulating sheet 201, wherein one pressure welding metal sheet 202 is connected with the base plate 1; the insulating sheet 201 in the embodiment of the present application is used for insulation, i.e. to prevent the die from being conducted with the bonding metal sheet 202, and the bonding metal sheet 202 is used for fixed connection, which facilitates the installation of the connecting part 2.
The embodiment of the application further comprises two lead-out wires 5, wherein one lead-out wire 5 is connected above the crystal grain 3 assembled on the base plate 1, and the other lead-out wire 5 is connected with the pressure welding metal sheet 202 positioned above the insulating sheet 201; the lead lines 5 in the embodiment of the present application function as conduction, i.e., one lead line 5 is connected as a positive electrode and the other lead line 5 is connected as a negative electrode.
Wherein, the insulation sheet 201 is a ceramic sheet or a high resin sheet.
Wherein, the orthographic projection face of insulating piece 201 covers the orthographic projection face of pressure welding sheetmetal 202, and the area of insulating piece 201 is greater than the area of pressure welding sheetmetal 202, and when the crystalline grain switched on, can effectively keep apart crystalline grain 3 and pressure welding sheetmetal 202, avoids both to switch on.
Wherein, the side of bottom plate 1 is provided with partial pressure section 6.
The diode packaging structure in the embodiment breaks through the traditional thinking, changes the large-area crystal grains needed by a single diode into two small-area crystal grains connected in series, and can meet the heat dissipation requirement and the packaging requirement while meeting the power requirement. When the existing photovoltaic module needs high power, the power of the photovoltaic module is increased by increasing current, and the large current generally meets the requirement by increasing the area of crystal grains; however, the current reaches 25-30A at present, the heat dissipation and packaging process under larger current reaches the bottleneck, and mainly as the area of the crystal grain is larger and larger, the mechanical stress borne by the crystal grain during installation is larger, and the welding stress borne by the crystal grain during welding is also larger; in the welding process, the middle pores with too large area are difficult to discharge by themselves, the porosity is increased, and the quality of the product is affected, so that the area of each single crystal grain needs to be controlled.
Since the temperature (Tj) of the die inside the bypass diode cannot exceed 200 ℃ at nominal current according to the IEC 62790:2014-5.3.18 standard. Calculating after measuring the shell temperature; the concrete formula is as follows: tj ═ Tcase+RTHjc x UD x ID(values less than 200 ℃); shell temperature (T)case) Depending on the magnitude of the current through the bypass diode (I)D) (ii) a If the current (I) of the photovoltaic module is reducedD) Under the same power, the voltage of the photovoltaic module is increased, so that the voltage is increased by connecting two crystal grains in series in a bypass diode, and the current is reduced to meet the condition that the Tj is less than 200 ℃.
The embodiment of the application also discloses a diode which is prepared by adopting the diode packaging structure.
The embodiment of the application also discloses a design method of the diode, which comprises the following steps:
a total area setting step of setting the total area of the crystal grains of the diode according to the set value of the allowable current of the diode;
and a single crystal grain specification setting step, wherein two crystal grains with the specification area being half of the total area are selected to be connected in series to finish assembly, namely the specification area of one crystal grain is the general of the total area.
The embodiment of the application also discloses a photovoltaic module which comprises a plurality of diodes.
Test the photovoltaic module disclosed in this application and current photovoltaic module and compare:
the test mode is as follows: adopting shielding to ensure that the diode of the photovoltaic module is conducted in the forward direction; the surface temperature of the internal bypass diode is collected through a thermocouple (the highest temperature point is obtained by detecting the surface temperature of the internal bypass diode at 10: 30-12: 00 am in fine days), and the internal junction Temperature (TJ) is obtained through conversion.
The test values are as follows:
Figure BDA0003032987820000051
Figure BDA0003032987820000061
wherein, the serial numbers 1 to 4 are the prior products, and 5 to 7 are the products in the application, so the comparison shows that the internal temperature saving in the application is obviously reduced, and the TJ can be effectively reduced by reducing the current.
In the description of the present invention, numerous specific details are set forth. It is understood, however, that embodiments of the invention may be practiced without these specific details. In some instances, well-known methods, structures and techniques have not been shown in detail in order not to obscure an understanding of this description.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the same embodiment or example must be referred to by the same schematic representation of the above terms. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples. Furthermore, various embodiments or examples and features of different embodiments or examples described in this specification can be combined and combined by one skilled in the art without contradiction.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; such modifications and substitutions do not depart from the spirit and scope of the present invention, and they should be construed as being included in the following claims and description.

Claims (9)

1. A diode package structure, comprising:
a base plate;
the connecting piece is arranged on the bottom plate;
two crystal grains, wherein one crystal grain is arranged on the connecting piece, and the other crystal grain is arranged on the bottom plate;
and one end of the jumper is connected with the upper part of the crystal grain positioned on the connecting piece, and the other end of the jumper is connected with the bottom plate.
2. The diode package structure of claim 1, wherein the bottom plate is a conductive sheet and the jumper is a metal jumper.
3. The diode package structure of claim 1, wherein the connector is:
an insulating sheet;
and the two pressure welding metal sheets are respectively assembled on the front surface and the back surface of the insulating sheet, wherein one pressure welding sheet is connected with the bottom plate.
4. The diode package structure of claim 3, further comprising two lead lines, one of said lead lines being connected to the top of the die mounted on the base plate, the other of said lead lines being connected to the bonding metal sheet located above the insulating sheet.
5. The diode package structure of claim 3, wherein the insulating sheet is a ceramic sheet or a polymer sheet or a nylon sheet or a high resin sheet.
6. The diode package structure of claim 3, wherein an orthographic projection of the insulating sheet covers an orthographic projection of the bonding metal sheet.
7. The diode package structure of any one of claims 1-6, wherein a voltage dividing section is disposed on a side of the bottom plate.
8. A method of designing a diode according to any one of claims 1 to 7, comprising: a total area setting step of setting the total area of the crystal grains of the diode according to the set value of the allowable current of the diode;
and a single crystal grain specification setting step, wherein two crystal grains with the specification area being half of the total area are selected to be connected in series to complete assembly.
9. A photovoltaic module comprising a plurality of the diodes of claim 8.
CN202110435781.7A 2021-04-22 2021-04-22 Diode, design method of diode and photovoltaic module Pending CN112951816A (en)

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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269564A (en) * 1985-09-20 1987-03-30 Nec Corp Semiconductor device
JP2007281090A (en) * 2006-04-04 2007-10-25 Kansai Electric Power Co Inc:The Wide gap composite semiconductor device
CN203013718U (en) * 2012-12-11 2013-06-19 扬州虹扬科技发展有限公司 Photovoltaic bypass diode
CN203721720U (en) * 2014-03-11 2014-07-16 佛山市蓝箭电子股份有限公司 Double-diode series-connected device
CN208173593U (en) * 2018-03-31 2018-11-30 深圳吉华微特电子有限公司 Metal Packaging cascaded structure diode
JP2019149439A (en) * 2018-02-27 2019-09-05 新電元工業株式会社 Power module

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6269564A (en) * 1985-09-20 1987-03-30 Nec Corp Semiconductor device
JP2007281090A (en) * 2006-04-04 2007-10-25 Kansai Electric Power Co Inc:The Wide gap composite semiconductor device
CN203013718U (en) * 2012-12-11 2013-06-19 扬州虹扬科技发展有限公司 Photovoltaic bypass diode
CN203721720U (en) * 2014-03-11 2014-07-16 佛山市蓝箭电子股份有限公司 Double-diode series-connected device
JP2019149439A (en) * 2018-02-27 2019-09-05 新電元工業株式会社 Power module
CN208173593U (en) * 2018-03-31 2018-11-30 深圳吉华微特电子有限公司 Metal Packaging cascaded structure diode

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