CN112928189A - Light emitting diode, photoelectric module and display device - Google Patents
Light emitting diode, photoelectric module and display device Download PDFInfo
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
The invention relates to the technical field of light emitting diode manufacturing, in particular to a light emitting diode, a photoelectric module and a display device, wherein the light emitting diode comprises a first semiconductor layer, a light emitting layer and a second semiconductor layer which are sequentially laminated, and the light emitting diode is provided with a first surface and a second surface which are opposite, wherein the second surface is provided with at least one thimble operation area; the second contact electrode bypasses the thimble operation area from the second pad electrode and extends towards the first pad electrode. The light-emitting diode provided by the invention has the advantages that the second contact electrode is arranged outside the thimble operation area of the chip, and the second contact electrode is provided with the bending point, so that the shape of the contact electrode is changed, the thimble operation window is enlarged to avoid the problem that the thimble breaks the contact electrode bulge to easily break the chip to cause abnormity, and the problem of uneven light emission caused by current change due to outward movement of the contact electrode can be avoided.
Description
Technical Field
The invention relates to the technical field of light emitting diode manufacturing, in particular to a light emitting diode, a photovoltaic module and a display device.
Background
Light Emitting Diodes (LEDs) have the advantages of low cost, high lighting efficiency, energy saving, environmental protection, and the like, and are widely used in lighting, visible Light communication, Light Emitting display, and other scenes. The LED chip is divided into a forward mounting structure, an inverted mounting structure and a vertical structure. Compared with the traditional forward chip, the flip chip has the advantages of high current, reliability, simplicity and convenience in use and the like, and is applied in a large scale at present.
The light emitting diode is designed based on the flip-chip structure, namely, the flip-chip structure is that a forward chip is inverted, so that light excited by a light emitting layer is directly emitted from the other surface of an electrode. As shown in fig. 1, when the finger electrode (contact electrode) protrusion area of the current flip chip falls on the operation area of the thimble, the thimble will directly push against the front surface of the chip during the die bonding, and if the thimble pushes against the finger electrode protrusion area, the thimble is easily broken to cause the chip abnormality (as shown in fig. 2).
Chinese further patent document CN109860366A discloses a light emitting diode, which includes: a light emitting diode body; the odd strip-shaped through holes are arranged on the front surface of the light-emitting diode body at intervals; the light-emitting diode comprises a light-emitting diode body, a light-emitting diode body and a plurality of strip-shaped through holes, wherein one strip-shaped through hole in the odd-numbered strip-shaped through holes is a central strip-shaped through hole which passes through the central axis of the light-emitting diode body, the central strip-shaped through hole comprises a first plug through hole, an outer reaming structure and a strip-shaped groove portion which penetrates through the outer reaming structure and is connected with the first plug through hole, the first plug through hole is used for forming an N electrode structure, and the outer reaming structure comprises. The problem that the light-emitting diode is in leakage failure due to the fact that the ejector pin penetrates the insulating layer on the strip-shaped through hole in the center of the light-emitting diode is solved, and the problem that the finger-shaped electrode is penetrated due to the fact that the surface of a chip is in contact with the ejector pin is also not involved.
Under certain specifications (e.g., area 32 mil)2（4*8mil）~ 360mil2(8 x 45 mil), 1mil equals 25.4 μm) leds are typically provided with extended contact electrodes to enhance current spreading and reduce voltage. Because the contact electrode has structural particularity, the prior art cannot solve the problem that a thimble is easy to break a convex region of the contact electrode to cause chip abnormity when packaging and die bonding are carried out, and does not solve the problem of uneven light emission caused by current change caused by the fact that the contact electrode bypasses an operating region of the thimble.
Disclosure of Invention
In order to solve the problem mentioned in the background art that the thimble easily breaks the protruding region of the contact electrode to cause chip abnormality, the invention provides a light emitting diode, comprising:
the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked, and is provided with a first surface and a second surface which are opposite, wherein the second surface is provided with at least one thimble operation area;
a first electrode and a second electrode over the second surface of the epitaxial structure, wherein the first electrode is electrically connected to the first semiconductor layer and the second electrode is electrically connected to the second semiconductor layer; the first electrode includes at least a first pad electrode, and the second electrode includes at least a second pad electrode and a second contact electrode;
the second contact electrode bypasses the thimble operation area from the second pad electrode and extends towards the first pad electrode.
On the basis of the technical scheme, the second contact electrode wholly or partially comprises a broken line, a curve, a straight line or a combination of the broken line, the curve and the straight line.
On the basis of the above technical solution, further, when the second contact electrode is a multi-electrode section combination, the second contact electrode at least includes a first electrode section, a second electrode section, and a bending point connecting the first electrode section and the second electrode section, the first electrode section is an electrode section between a starting point of the second contact electrode and the bending point, and the second electrode section is an electrode section between the bending point and a tail end of the second contact electrode.
On the basis of the technical scheme, further, the first electrode section and the second electrode section are respectively one or a combination of a straight line, a broken line or a curve.
On the basis of the technical scheme, the second contact electrode at least comprises a first electrode section and a second electrode section, wherein the first electrode section is located at the position of 0-1/3 edge of the width of the short side of the chip body, and the tail end of the second contact electrode is located at the position of 1/3-2/3 edge of the width of the short side of the chip body.
On the basis of the technical scheme, further, the second contact electrode at least comprises a first electrode section and a second electrode section, wherein the first electrode section is located at the position of 0-1/3 edge of the width of the short side of the chip body, the second electrode section is connected with the first electrode section and extends towards the direction of the first pad electrode, and the second electrode section occupies the whole length 1/3-1/2 of the second contact electrode.
On the basis of the above technical solution, further, the second contact electrode at least includes a first electrode section and a second electrode section, and when the thimble operation region is a circular region, a partial section of the first electrode section is provided with an arc shape so that the first electrode section bypasses the thimble operation region, wherein a circle center of the circular region is a geometric center of a surface of the light emitting diode chip.
On the basis of the technical scheme, the second contact electrode at least comprises a first electrode section and a second electrode section, and the partial section of the first electrode section is provided with a triangle or a rectangle which is convex outwards relative to the operation area of the thimble.
On the basis of the technical scheme, the second contact electrode at least comprises a first electrode section and a second electrode section, and the width of the part, close to the thimble operation area, of the first electrode section is smaller than the width of the rest sections on the first electrode section.
On the basis of the technical scheme, further, the width of the second contact electrode close to the thimble operation area section is not less than 3 μm.
On the basis of the technical scheme, further, the second contact electrode at least comprises a first electrode section and a second electrode section, wherein the first electrode section is located at the position of 0-1/3 edge of the width of the short side of the chip body, and the second electrode section is at least partially located between the first pad electrode and the second semiconductor layer and is electrically isolated from the first pad electrode through an insulating layer.
On the basis of the technical scheme, the length of the second contact electrode is 30% -60% of the length of the chip body.
On the basis of the technical scheme, further, the length of the chip body is 8 mil-45 mil, and the width is 3 mil-8 mil.
On the basis of the technical scheme, further, when the length of the chip body is 20mil and the width of the chip body is 6mil, the length of the second contact electrode is 180-300 μm.
On the basis of the technical scheme, the length-width ratio of the chip body is not less than 2: 1.
On the basis of the above technical solution, further, the area ratio of the sum of the areas of the first pad electrode and the second pad electrode to the chip body is not less than 1/2.
On the basis of the above technical solution, further, the light emitting diode is in a flip-chip structure, and further includes an insulating reflective layer, the insulating reflective layer covers the second contact electrode, at least two through holes are provided in the insulating reflective layer, and the first pad electrode and the second pad electrode are formed on the insulating reflective layer and are electrically connected to the first semiconductor layer and the second semiconductor layer through the through holes.
On the basis of the technical scheme, the length-width ratio of the chip body is not less than 2:1, the length of the chip body is greater than or equal to 8mil, the width of the chip body is less than or equal to 8mil, at least one part of the second contact electrode is located at the position of 0-1/3 edge of the width of the short edge of the chip body, and one part of the second contact electrode extends to the position below the first bonding pad and is located at the position of 1/3-2/3 edge of the width of the short edge of the chip body.
The invention also provides a photoelectric module, which adopts the light-emitting diode.
The invention also provides a display device which adopts the photoelectric module.
According to the light-emitting diode provided by the invention, the second contact electrode is arranged outside the thimble operation area of the chip, and the second contact electrode is provided with the bending point, so that the shape of the contact electrode is changed, the thimble operation window is enlarged, the problem that the thimble breaks the convex area of the contact electrode to easily break the chip to cause abnormity is avoided, and the problem of uneven light emission caused by current change due to outward movement of the contact electrode is avoided.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings needed to be used in the description of the embodiments or the prior art will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without creative efforts.
FIG. 1 is a schematic view of a thimble operating area in a conventional LED;
FIG. 2 is a schematic diagram of a conventional LED in which a thimble pierces a protruding region of a contact electrode to damage the electrode;
fig. 3 is a schematic cross-sectional view of an led structure according to an embodiment of the invention;
fig. 4a to 4c are schematic top views of a light emitting diode structure according to an embodiment of the invention;
FIGS. 5 a-5 b are schematic top views of a light emitting diode structure according to another embodiment of the invention;
FIGS. 6 a-6 b are schematic top views of a light emitting diode structure according to another embodiment of the invention;
FIGS. 7a to 7c are schematic top views of a light emitting diode structure according to still another embodiment of the invention;
fig. 8 is a schematic top view illustrating an led structure according to still another embodiment of the present invention;
fig. 9 is a flowchart of a manufacturing process of a light emitting diode according to an embodiment of the invention.
Reference numerals:
| 10 | 20 | 30 |
| 40 | 50 | 60 |
| 70 | 71 | 72 |
| 80 | 81 | 82 |
| 810 | 811 | 812 |
| 90 thimble work area |
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", etc. indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
Fig. 3 is a schematic cross-sectional view of a light emitting diode structure according to an embodiment of the present invention, as shown in fig. 3 and fig. 4a to 4c, the embodiment provides a light emitting diode including: a substrate 10; an epitaxial structure including a first semiconductor layer 20, a light emitting layer 30, and a second semiconductor layer 40 sequentially stacked; a first electrode 70, located on the first semiconductor layer 20, electrically connected to the first semiconductor layer 20, including a first pad electrode 72 and a first contact electrode 71, wherein the first contact electrode 71 is located in a planar region of the electrode mesa, forming an ohmic contact with the first semiconductor layer 20; a second electrode 80 positioned above the second semiconductor layer 40, electrically connected to the second semiconductor layer 40, and including a second pad electrode 82 and a second contact electrode 81;
a transparent current spreading layer 50 is deposited on the second semiconductor layer 40 by evaporation, and the material of the current spreading layer 50 can be one or a combination of several of ITO, GTO, GZO and ZnO, and is not limited to the examples listed here;
the embodiment further includes an insulating layer 60, which is located above the second semiconductor layer 40, covers the inclined plane of the electrode mesa and the first contact electrode 71, and is provided with two through holes, and the first pad electrode 72 and the second pad electrode 82 are formed on the insulating layer 60 and are electrically connected to the first semiconductor layer 20 and the second semiconductor layer 40 through the through holes, respectively; the insulating layer 60 comprises at least SiO2Layer, Si3N4Layer of Al2O3One or a combination of layers, AlN layers, DBR layers, and the like, and is not limited to the examples listed herein. As an example, a distributed bragg reflector DBR layer may be preferably used; the DBR layer covers the transparent current spreading layer 50 and the first and second contact electrodes 71 and 81, and is then perforated by dry etching, so as to achieve conduction between the first and second electrodes 70 and 80.
The structure is an embodiment structure of the light emitting diode, and a person skilled in the art can make corresponding changes according to actual requirements on the basis of the embodiment structure.
In the above embodiments, the substrate 10 comprises sapphire (Al) which may be selected as the substrate2O3) At least one of SiC, GaAs, GaN, ZnO, Si, GaP, InP, and Ge, and is not limited to the examples listed herein. The present embodiment prefers a sapphire substrate; the light emitting layer 30 is a multiple quantum well layer.
As an example, the first semiconductor layer 20 may be an N-type GaN layer, and the second semiconductor layer 40 may be a P-type GaN layer.
In this embodiment, the first electrode 70 and the second electrode 80 are metal electrodes for supplying current to the outside, for example, nickel, gold, chromium, titanium, platinum, palladium, rhodium, iridium, aluminum, tin, indium, tantalum, copper, cobalt, iron, ruthenium, zirconium, tungsten, molybdenum, and one or a combination thereof.
Fig. 4a to 4c are schematic top views of a light emitting diode structure according to an embodiment of the invention, as shown in fig. 4a, the second contact electrode 81 extends from the second pad electrode 82 to the first pad electrode 72 in a direction bypassing the thimble operation region 90, and the thimble operation region 90 is a region covered by a range error when the thimble operates on the chip surface, for example, a circular region having a radius not greater than 35 μm, preferably not greater than 25 μm.
The second contact electrode 81 includes a broken line, a curved line, a straight line, or a combination thereof in whole or in part.
When the second contact electrode 81 is a multi-electrode segment combination, as shown in fig. 4a, the second contact electrode 81 is provided with a bending point 810, the second contact electrode 81 at least comprises a first electrode segment 811 and a second electrode segment 812, the first electrode segment 811 is an electrode segment between the starting point and the bending point 810 of the second contact electrode 81, and the second electrode segment 812 is an electrode segment between the bending point 810 and the end of the second contact electrode 81. An end point of the second contact electrode 81 extending toward the second pad electrode 82 is a starting point, and the other end of the second contact electrode 81 opposite to the starting point is an end.
In another example, the light emitting diode structure shown in fig. 4b is based on the structure shown in fig. 4a, and the first electrode 70 includes a first pad electrode 72 and a first contact electrode 71.
When the second contact electrode 81 is a single integral bent electrode segment, as shown in fig. 4c, the second contact electrode 81 extends from the second pad electrode 82 in the upper long side to the right short side direction bypassing the thimble operation region 90.
In the light emitting diode provided by the above embodiment of the present invention, the second contact electrode 81 is disposed outside the thimble operation region 90 of the chip, and the second contact electrode 81 is disposed with the bending point 810, so that the overall shape of the second contact electrode 81 is changed, thereby expanding the thimble operation window, avoiding the problem that the thimble breaks the protrusion region of the contact electrode to easily break the contact electrode, which leads to abnormal chip, and avoiding the problem of uneven light emission caused by current change due to outward movement of the contact electrode.
Fig. 5a to 5b are schematic top views of a light emitting diode structure according to another embodiment of the present invention, as shown in fig. 5a, the size of the chip is 6 × 20mil (width × length), and under the premise that the second contact electrode 81 is ensured to bypass the thimble operation region 90, the bending point 810 of the second contact electrode 81 is located at 0 to 1/3 of the short side width of the chip body, and the end of the second contact electrode 81 is located at 1/3 to 2/3 of the short side width of the chip body. The experimental test comparison shown in table 1 shows that the bending point 810 and the end are disposed in the above-mentioned interval, which is an excellent solution to the problem of uneven light emission caused by current variation due to outward movement of the contact electrode. In particular, a chip having a bulk aspect ratio of not less than 2: 1; or the length of the chip body is 8-45 mil, and the width of the chip body is 4-8 mil; or, on the chip product that the ratio of the sum of the areas of the first pad electrode 72 and the second pad electrode 82 to the area of the body is not less than 1/2, the problem of uneven light emission caused by current change due to outward movement of the contact electrode can be effectively solved by combining the technical characteristics.
TABLE 1
In the above embodiment, specifically, the thimble operation region 90 may be a circular region with the geometric center of the chip surface as the center of the thimble operation region and the maximum operation error length as the radius. The use of the thimble is not limited to the die bonding process, and the thimble can be a thimble in other subsequent production processes or test processes.
In one example of the thimble operating region 90, the thimble operating region 90 is a circular region having a radius of no greater than 35 μm, preferably no greater than 25 μm. The end of the thimble may be circular or flat, and is not further limited herein.
Fig. 6a to 6b are schematic top views of a light emitting diode structure according to still another embodiment of the present invention, where fig. 6a shows an embodiment structure in which the second electrode segments 812 are respectively in a curved shape, fig. 6b shows an embodiment structure in which the second electrode segments 812 are in a zigzag shape, and the structures shown in fig. 6a to 6b can extend the length of the second electrode segments 812, thereby effectively avoiding the problem of uneven light emission caused by current variation due to outward movement of the contact electrodes. The shape of the second electrode segment 812 is not limited to the examples listed herein, and includes, but is not limited to, one or a combination of straight lines (e.g., fig. 4 a-4 b), polygonal lines, curved lines, or arcs.
Fig. 7a is a schematic top view of a light emitting diode structure according to still another embodiment of the present invention, and as shown in fig. 7a, when the thimble operation region 90 is a circular region, the first electrode segment 811 has an arc shape, the center of the arc shape is the same as the center of the circular region, and the radius of the arc shape is greater than the radius of the circular region.
In another example, as shown in fig. 7 b-7 c, when the thimble operation region 90 is a circular region, the first electrode segment 811 has a triangular or rectangular shape protruding outward relative to the circular region, and the triangular or rectangular shape is also disposed on the portion of the second contact electrode 81 near the thimble operation region 90.
Fig. 8 is a schematic top view of a light emitting diode structure according to still another embodiment of the present invention, in which the width of a portion of the first electrode segment 811 is smaller than the width of the rest of the first electrode segment 811 on the premise that the second contact electrode 81 is not shifted toward the long side direction of the chip. The narrower electrode segment is also disposed at the portion of the second contact electrode 81 close to the thimble operating region 90, so that the second contact electrode 81 can bypass the thimble operating region 90 while minimizing the deformation of the second contact electrode 81. More preferably, as shown in fig. 8, in the first electrode segment 811, only the portion near the thimble operation region 90 is deformed concavely so that the second contact electrode 81 avoids the thimble operation region 90, thereby achieving the design object of the present invention.
In fig. 6a to 6b, the shapes of the second electrode segments 812 and the shapes of the first electrode segments 811 in fig. 7a to 7c and 8 may be freely combined, and are not limited to the configurations shown in the above figures.
In any of the above embodiments, the structure is preferably applied to a chip having a bulk aspect ratio of not less than 2: 1; or the length of the chip body is 8-45 mil, and the width of the chip body is 4-8 mil; or, the ratio of the sum of the areas of the first pad electrode 72 and the second pad electrode 82 to the area of the chip body is not less than 1/2.
With the chip design of the above specification, the second contact electrode 81 falls in the thimble operation region 90, which easily breaks the contact electrode protrusion region and easily causes chip abnormality.
In any of the above embodiments, the length of the second contact electrode 81 is effectively 30% to 60% of the length of the body, and in a specific chip size example, the length of the chip body is specifically 20 mils, and when the width is 6 mils, the length of the second contact electrode 81 is 180 μm to 300 μm, where 1mil is equal to 25.4 μm.
In a specific chip type example, the light emitting diode is in a flip-chip structure; of course, the design concept according to the present invention can also be applied to a front-mounted or vertical light emitting diode, and is not limited to the examples listed herein.
According to the light-emitting diode provided by the invention, the second contact electrode is arranged outside the thimble operation region of the chip, so that the problem that the chip is abnormal because the thimble breaks the convex region of the contact electrode easily is solved. The second contact electrode is provided with a bending point, the second contact electrode at least comprises a first electrode section and a second electrode section, the first electrode section is an electrode section between the starting point and the bending point of the second contact electrode, the second electrode section is an electrode section between the bending point and the tail end of the second contact electrode, and the voltage can be controlled to be stable by deforming the shape of the second contact electrode, so that the problem of uneven light emission is solved, the yield of products is greatly improved in the production and application of LEDs, and the LED thimble structure has important practical application value.
Preferably, when the end of the second contact electrode 81 is curved or broken, the length of the end occupies the total length of 1/3-1/2. As shown in table 2, the chip size is preferably tested at 6 x 20mil (width x length), and experimental tests show that the above scheme can effectively control the stability of the voltage. Similarly, the length-width ratio of the chip is not less than 2: 1; or the length of the chip body is 8-45 mil, and the width of the chip body is 4-8 mil; or, in the chip product in which the ratio of the sum of the areas of the first pad electrode 72 and the second pad electrode 82 to the area of the body is not less than 1/2, the stability of the voltage can be effectively controlled by combining the technical characteristics.
TABLE 2
Further, in order to avoid the problem that the width is too small to affect the current diffusion of the strip-shaped core particles and cause high voltage, as shown in fig. 8, the width w of the second contact electrode 81 near the thimble operation region section is not less than 3 μm, and experimental tests show that the electrode section with the width less than 3 μm causes voltage instability to affect the light emitting effect.
The present embodiment provides a photovoltaic module, which employs the light emitting diode provided in any of the above embodiments, and details of the structure and technical effects are not repeated.
The present embodiment provides a display device, which employs the above-mentioned optoelectronic module, and the detailed structure and technical effects thereof are not repeated.
Besides the application scenes of the embodiment, the light emitting diode provided by the invention can also be used in the fields of COB illumination, flexible filaments, backlight display and the like.
An embodiment of the present invention further provides a specific manufacturing process of a light emitting diode (as shown in fig. 3) as a reference, as shown in fig. 9, including the following steps:
step a, growing a GaN buffer layer, an N-type GaN layer (namely a first semiconductor layer), a light-emitting layer and a P-type GaN layer (namely a second semiconductor layer) on a sapphire substrate in sequence;
step b, defining the size of the chip by an ICP dry etching method, and etching a table top to expose the N-type GaN layer;
c, manufacturing an ISO edge structure according to the edge of the chip through a yellow light and dry etching process;
step d, evaporating and plating a transparent current expansion layer on the P-type GaN layer, wherein the material of the expansion layer can be ITO, GTO, GZO, ZnO or the combination of several materials;
step e, forming a first/second contact electrode through yellow light and evaporation process;
step f, manufacturing a Bragg reflection layer (DBR) of SiO on the structure2、TIO2The insulating layer of the alternating structure, the insulating layer covers the whole chip area;
step g, exposing a part of the first/second contact electrodes by dry etching;
h, manufacturing the first electrode and the second electrode again through photoetching and evaporation processes, wherein the surface layer of the electrode material is made of Au material;
step i, thinning and polishing a sapphire layer of the chip formed by the process by using grinding equipment;
j, cutting the chip by using a cutting and scribing process;
step k, inverting the light emitting diode to enable the back surface of the growth substrate to face upwards, and bonding the core particles on the heat dissipation substrate by using solder paste;
finally, the flip-chip light emitting diode is obtained through a packaging process.
In summary, the core idea of the present invention is as follows: the second contact electrode is arranged outside the thimble operation area of the chip, so that the problem that the chip is abnormal because the thimble breaks the convex area of the contact electrode easily is solved. However, compared with the existing structure, the outward movement of the second contact electrode can cause some problems of current diffusion and weakening, and therefore, a plurality of embodiments are designed in succession as supplements, so that the problem that the thimble breaks the protruding area of the contact electrode can be solved, the current distribution can be effectively improved, and the light emitting efficiency of the light emitting diode can be improved.
Finally, it should be noted that: the above embodiments are only used to illustrate the technical solution of the present invention, and not to limit the same; while the invention has been described in detail and with reference to the foregoing embodiments, it will be understood by those skilled in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some or all of the technical features may be equivalently replaced; and the modifications or the substitutions do not make the essence of the corresponding technical solutions depart from the scope of the technical solutions of the embodiments of the present invention.
Claims (20)
1. A light emitting diode comprising:
the epitaxial structure comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are sequentially stacked, and is provided with a first surface and a second surface which are opposite, wherein the second surface is provided with at least one thimble operation area;
a first electrode and a second electrode over the second surface of the epitaxial structure, wherein the first electrode is electrically connected to the first semiconductor layer and the second electrode is electrically connected to the second semiconductor layer; the first electrode includes at least a first pad electrode, and the second electrode includes at least a second pad electrode and a second contact electrode;
the second contact electrode bypasses the thimble operation area from the second pad electrode and extends towards the first pad electrode.
2. The led of claim 1, wherein the second contact electrode comprises a broken line, a curved line, a straight line, or a combination thereof, in whole or in part.
3. The light-emitting diode according to claim 2, wherein the second contact electrode is a multi-electrode segment combination and comprises at least a first electrode segment, a second electrode segment and a bending point connecting the first electrode segment and the second electrode segment, the first electrode segment is an electrode segment between a starting point and the bending point of the second contact electrode, and the second electrode segment is an electrode segment between the bending point and an end point of the second contact electrode.
4. The light-emitting diode according to claim 3, wherein the first electrode segment and the second electrode segment are respectively one or a combination of a straight line, a broken line or a curved line.
5. The light-emitting diode of claim 1, wherein the second contact electrode comprises at least a first electrode segment and a second electrode segment, wherein the first electrode segment is located at a position between 0 and 1/3 sides of the width of the short side of the chip body, and the end of the second contact electrode is located at a position between 1/3 and 2/3 sides of the width of the short side of the chip body.
6. The light-emitting diode of claim 1, wherein the second contact electrode comprises at least a first electrode segment and a second electrode segment, wherein the first electrode segment is located at a position between 0 and 1/3 sides of the width of the short side of the chip body, the second electrode segment is connected with the first electrode segment and extends toward the first pad electrode, and the second electrode segment occupies a length between 1/3 and 1/2 of the second contact electrode.
7. The led of claim 1, wherein said second contact electrode comprises at least a first electrode segment and a second electrode segment, and when said operating region of said thimble is a circular region, said first electrode segment is partially provided with an arc shape such that said first electrode segment bypasses said operating region of said thimble, wherein the center of said circular region is the geometric center of the surface of said led chip.
8. The led of claim 1, wherein said second contact electrode comprises at least a first electrode segment and a second electrode segment, said first electrode segment sub-segment having a triangular or rectangular shape convex with respect to said pin operating region.
9. The led of claim 1, wherein said second contact electrode comprises at least a first electrode segment and a second electrode segment, and a portion of said first electrode segment adjacent to said needle operation region has a width smaller than a width of a remaining portion of said first electrode segment.
10. The led of claim 9, wherein the width of the second contact electrode near the thimble operation region section is not less than 3 μm.
11. The light-emitting diode according to claim 1, wherein the second contact electrode comprises at least a first electrode segment and a second electrode segment, wherein the first electrode segment is located at a position between 0 and 1/3 sides of the width of the short side of the chip body, and the second electrode segment is at least partially located between the first pad electrode and the second semiconductor layer and is electrically isolated from the first pad electrode by an insulating layer.
12. The light-emitting diode according to any one of claims 1 to 11, wherein the length of the second contact electrode is 30% to 60% of the length of the chip body.
13. The light-emitting diode according to any one of claims 1 to 11, wherein the chip body has a length of 8 to 45 mils and a width of 3 to 8 mils.
14. The led of claim 13, wherein the length of the chip body is 20mil, and the length of the second contact electrode is 180-300 μm when the chip body has a width of 6 mil.
15. The led of any one of claims 1-11, wherein the chip body has an aspect ratio of not less than 2: 1.
16. The light-emitting diode according to any one of claims 1 to 11, wherein a ratio of a sum of areas of the first pad electrode and the second pad electrode to an area of the chip body is not less than 1/2.
17. The light-emitting diode according to any one of claims 1 to 11, wherein the light-emitting diode is a flip-chip structure, and further comprising an insulating reflective layer covering the second contact electrode, wherein at least two through holes are provided in the insulating reflective layer, and the first pad electrode and the second pad electrode are formed on the insulating reflective layer and electrically connected to the first semiconductor layer and the second semiconductor layer through the through holes.
18. The light-emitting diode of any one of claims 1 to 11, wherein the chip body has an aspect ratio of not less than 2:1, a length of 8mil or more and a width of 8mil or less, and the second contact electrode is at least partially located between 0 and 1/3 edges of the width of the short side of the chip body, and partially extends under the first pad and is located between 1/3 and 2/3 edges of the width of the short side of the chip body.
19. A light emitting module, characterized in that a light emitting diode according to any one of claims 1 to 18 is used.
20. A display device characterized by using the light-emitting module according to claim 19.
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| CN113644177A (en) * | 2021-08-10 | 2021-11-12 | 厦门三安光电有限公司 | Light emitting diode and light emitting device |
| CN113809214A (en) * | 2021-09-13 | 2021-12-17 | 厦门三安光电有限公司 | Flip-chip light emitting diode and light emitting device |
| CN114023858A (en) * | 2021-11-02 | 2022-02-08 | 厦门三安光电有限公司 | Light-emitting diode, light-emitting module and light-emitting device |
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| CN114023858A (en) * | 2021-11-02 | 2022-02-08 | 厦门三安光电有限公司 | Light-emitting diode, light-emitting module and light-emitting device |
| CN114023858B (en) * | 2021-11-02 | 2023-07-14 | 厦门三安光电有限公司 | Light emitting diode, light emitting module and light emitting device |
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