CN112909200A - Display panel and preparation method thereof - Google Patents
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- CN112909200A CN112909200A CN202110074185.0A CN202110074185A CN112909200A CN 112909200 A CN112909200 A CN 112909200A CN 202110074185 A CN202110074185 A CN 202110074185A CN 112909200 A CN112909200 A CN 112909200A
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- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
- H10K59/131—Interconnections, e.g. wiring lines or terminals
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Abstract
The invention discloses a display panel and a preparation method thereof, wherein the display panel comprises: a base layer including a display area and a non-display area disposed around the display area; the passivation layer is arranged on one side of the substrate layer and is provided with a first opening, and the first opening is positioned in the non-display area; the first electrode layer is arranged on one side, close to the substrate layer, in the first opening of the passivation layer; the second electrode layer is arranged on the surface of one side, far away from the substrate layer, of the first electrode layer; the second electrode layer comprises a second electrode, and the material of the second electrode comprises at least one of indium gallium tin oxide, indium gallium zinc tin oxide and gallium tin oxide. According to the invention, the second electrode layer is arranged, so that the first electrode layer is prevented from being in contact with oxygen to generate an oxidation reaction, and the silver electrode is etched, so that the oxidation reaction of the silver electrode is avoided, and the reliability and the product quality of the display panel are improved.
Description
Technical Field
The invention relates to the technical field of display, in particular to a display panel and a preparation method of the display panel.
Background
At present, the development of the OLED (Organic Light Emitting Diode) display technology has been advanced rapidly, and the OLED product has the advantages of lightness, thinness, fast response, wide viewing angle, high contrast, flexibility and the like, so that the OLED product receives more and more attention and applications, and is mainly applied to the display fields of mobile phones, flat panels, televisions and the like.
In a top-emitting OLED structure, a common ITO (Indium Tin Oxide)/Ag (silver)/ITO composite film layer may be used as a reflective layer and an anode electrode layer; the ITO/Ag/ITO is connected with the OLED light-emitting device structure; in a COF (Chip On Film) bonding area of the backboard, an exposed metal wire pattern of the bonding area and a grid or a source drain electrode are prepared by the same photomask; if a Cu (copper) process is adopted, the Cu film of the binding area is exposed, and in order to prevent the Cu film from being oxidized by the post-process, ITO/Ag/ITO is covered above the Cu film of the binding area for protection.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a display panel in the prior art. In an actual manufacturing process, an inclined plane is formed after ITO/Ag/ITO is etched, Ag at the inclined plane is exposed outside, the chemical property of Ag is active and is easily oxidized, after the whole OLED device is manufactured, the Ag at the inclined plane of the ITO/Ag/ITO at the edge of a metal wire of a binding region is oxidized and gradually worsens along with the lapse of time, and when the Ag deteriorates to a certain degree, the binding region is not firm, the contact resistance is increased, and the like, so that the reliability of the OLED backboard is influenced.
In summary, in the prior art, the silver electrode of the metal wire in the binding region is easily oxidized and corroded, so that the binding region is not firm, the contact resistance is increased, and the reliability of the OLED backplane is reduced.
Disclosure of Invention
The embodiment of the invention provides a display panel and a preparation method of the display panel, and aims to solve the technical problems that in the prior art, a silver electrode of a metal wire in a binding region is easily oxidized and corroded, so that the binding region is not firm, the contact resistance is increased, the reliability of an OLED backboard is reduced, and the like.
In order to solve the above problem, a first aspect of the present invention provides a display panel, including:
a base layer including a display area and a non-display area disposed around the display area;
the passivation layer is arranged on one side of the substrate layer and is provided with a first opening, and the first opening is positioned in the non-display area;
the first electrode layer is arranged on one side, close to the substrate layer, in the first opening of the passivation layer;
the second electrode layer is arranged on the surface of one side, far away from the substrate layer, of the first electrode layer;
the second electrode layer comprises a second electrode, and the material of the second electrode comprises at least one of indium gallium tin oxide, indium gallium zinc tin oxide and gallium tin oxide.
In some embodiments of the present invention, the first electrode layer includes a first electrode and a barrier layer, the first electrode is disposed on a side surface of the barrier layer away from the substrate layer and is in contact with the second electrode layer, a material of the first electrode includes copper, and a material of the barrier layer includes one of molybdenum and titanium or a molybdenum-titanium alloy.
In some embodiments of the invention, an upper surface of the first electrode layer is lower than an upper surface of the passivation layer, and a portion of the second electrode layer is filled in the first opening of the passivation layer.
In some embodiments of the present invention, the liquid crystal display further includes a buffer layer, an interlayer dielectric layer, a planarization layer, and a pixel defining layer, wherein the buffer layer is disposed on the substrate layer, the interlayer dielectric layer is disposed between the buffer layer and the passivation layer, and the planarization layer and the pixel defining layer are sequentially stacked on the passivation layer.
In some embodiments of the present invention, the passivation layer and the planarization layer are further provided with a second opening, the second opening is located in the display region, the display panel further includes a third electrode layer, the third electrode layer is filled in the second opening and covers a part of the surface of the planarization layer, the third electrode layer includes a third electrode, a silver electrode and an indium tin oxide electrode, which are sequentially stacked from bottom to top, and a material of the third electrode includes at least one of the indium gallium tin oxide, the indium gallium zinc tin oxide and the gallium tin oxide electrode.
In a second aspect, the present invention provides a method for manufacturing a display panel, the method being used for manufacturing the display panel according to any one of the first aspect, including the steps of:
providing a substrate layer, and sequentially preparing a buffer layer, an interlayer dielectric layer, a passivation layer and a planarization layer on the substrate layer, wherein a first opening is formed in the passivation layer;
preparing a first electrode layer in the first opening of the passivation layer;
preparing a second electrode layer on the first electrode layer;
the second electrode layer comprises a second electrode, and the material of the second electrode comprises at least one of indium gallium tin oxide, indium gallium zinc tin oxide and gallium tin oxide.
In some embodiments of the present invention, the step of preparing the second electrode layer further comprises: a second electrode, a silver electrode and an indium tin oxide electrode are sequentially prepared on the first opening and the surface of the passivation layer;
preparing a first light resistance layer on the indium tin oxide electrode, and etching the second electrode, the silver electrode and the indium tin oxide electrode which are not covered by the first light resistance layer;
ashing the first light resistance layer, etching the silver electrode and the indium tin oxide electrode above the first opening.
In some embodiments of the present invention, further comprising the step of preparing the third electrode layer: opening second openings in the passivation layer and the planarization layer, and preparing the third electrode, the silver electrode and the indium tin oxide electrode in the second openings and on the surface of the planarization layer;
preparing a second light resistance layer on the indium tin oxide electrode, and etching the third electrode, the silver electrode and the indium tin oxide electrode which are not covered by the second light resistance layer;
stripping the second photoresist layer;
wherein the material of the third electrode is the same as the material of the second electrode.
In some embodiments of the present invention, a first photo-masking process is used to prepare the second electrode, the silver electrode and the indium tin oxide electrode in the first opening, and prepare the third electrode, the silver electrode and the indium tin oxide electrode in the second opening, respectively;
and respectively preparing the first light resistance layer on the indium tin oxide electrode of the first opening and preparing the second light resistance layer on the indium tin oxide electrode of the second opening by adopting a second photomask process.
In some embodiments of the present invention, the first photoresist layer and the second photoresist layer are prepared using a semi-permeable membrane mask, and the thickness of the first photoresist layer is less than the thickness of the second photoresist layer.
Compared with the existing display panel and the preparation method of the display panel, the second electrode layer is arranged on the first electrode layer, the second electrode layer covers the first electrode layer to prevent the first electrode layer from being in contact with oxygen to generate oxidation reaction, and simultaneously, the silver electrode and the indium tin oxide electrode in the non-display area are completely etched, so that the non-display area is free of the silver electrode, and the oxidation reaction of the silver electrode is avoided, therefore, the problem that a metal electrode in the non-display area is directly exposed in the air and is easily oxidized can be solved, the second electrode layer is further limited to be made of the material with good stability and strong acid resistance, and the reliability and the product quality of the display panel are improved.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the description of the embodiments will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.
FIG. 1 is a schematic diagram of a display panel in the prior art;
FIG. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention;
FIG. 3 is a schematic flow chart of a preparation method according to an embodiment of the present invention;
FIGS. 4A-4G are schematic step diagrams of a manufacturing process according to an embodiment of the present invention.
Detailed Description
The technical solution in the embodiments of the present invention will be clearly and completely described below with reference to the accompanying drawings in the embodiments of the present invention. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations and positional relationships based on those shown in the drawings, and are used only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be considered as limiting the present invention. Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically defined otherwise.
In this application, the word "exemplary" is used to mean "serving as an example, instance, or illustration. Any embodiment described herein as "exemplary" is not necessarily to be construed as preferred or advantageous over other embodiments. The following description is presented to enable any person skilled in the art to make and use the invention. In the following description, details are set forth for the purpose of explanation. It will be apparent to one of ordinary skill in the art that the present invention may be practiced without these specific details. In other instances, well-known structures and processes are not shown in detail to avoid obscuring the description of the invention with unnecessary detail. Thus, the present invention is not intended to be limited to the embodiments shown, but is to be accorded the widest scope consistent with the principles and features disclosed herein.
As shown in fig. 1, fig. 1 is a schematic structural diagram of a display panel in the prior art. The display panel comprises a display area and a non-display area, wherein the display area comprises a glass substrate 11, a buffer layer 13, a shading metal layer 131, a thin film transistor array layer and a light-emitting device layer which are sequentially stacked from bottom to top; the thin film transistor array layer comprises an active layer 141, a gate electrode 143, a source drain electrode 144, an interlayer dielectric layer 14, a gate insulating layer 142, a passivation layer 12 and a planarization layer 15; the light emitting device layer includes a pixel defining layer 16, an anode layer 123, an organic light emitting layer 161, and a cathode layer 162; the non-display region includes a first electrode layer 121 and a second electrode layer 122. The first electrode layer 121 includes a molybdenum electrode and a copper electrode, which are stacked, and the second electrode layer 122 includes an indium tin oxide electrode, a silver electrode, and an indium tin oxide electrode, which are stacked. The second electrode layer 122 forms an inclined plane after etching, the silver electrode at the inclined plane is exposed outside, and the silver is active in chemical property and is easily oxidized, so that the non-display area is not firm, the contact resistance is increased, and the reliability of the OLED backboard is reduced.
Accordingly, the embodiment of the invention provides a display panel and a preparation method of the display panel. The following are detailed below.
As shown in fig. 2, fig. 2 is a schematic structural diagram of a display panel according to an embodiment of the present invention. The display panel includes: a base layer 21 including a display area and a non-display area disposed around the display area; a passivation layer 22 disposed on one side of the substrate layer 21 and having a first opening formed therein, the first opening being located in the non-display region; a first electrode layer 221 disposed on a side of the first opening of the passivation layer 22 close to the base layer 21; a second electrode layer 222 disposed on a surface of the first electrode layer 221 away from the substrate layer 21; the second electrode layer 222 includes a second electrode, and a material of the second electrode includes at least one of Indium Gallium Tin Oxide (IGTO), Indium Gallium Zinc Tin Oxide (IGZTO), and Gallium Tin Oxide (GTO).
Compared with the existing display panel, the second electrode layer 222 is arranged on the first electrode layer 221, the second electrode layer 222 covers the first electrode layer 221 to prevent the first electrode layer 221 from being in contact with oxygen to generate an oxidation reaction, and simultaneously, the silver electrode and the indium tin oxide electrode in the non-display area are all etched away, so that the silver electrode is not arranged in the non-display area, and the oxidation reaction of the silver electrode is avoided, so that the problem that a metal electrode in the non-display area is directly exposed in the air and is easily oxidized can be solved, the second electrode layer 222 is further limited to be made of the material with good stability and strong acid resistance, and the reliability and the product quality of the display panel are improved.
In some embodiments of the present invention, the first electrode layer 221 includes a first electrode 221b and a blocking layer 221a, the first electrode 221b is disposed on a side surface of the blocking layer 221a away from the substrate layer 21 and is in contact with the second electrode layer 222, a material of the first electrode 221b includes copper, and a material of the blocking layer 221a includes one of molybdenum and titanium or a molybdenum-titanium alloy. In this embodiment, the first electrode layer 221 is electrically connected to the flexible circuit board, and the first electrode 221b with good electrical conductivity needs to be disposed, preferably, the material of the first electrode 221b is silver, copper or gold, and most preferably, copper in consideration of production cost; the barrier layer 221a is required to prevent water and oxygen from eroding the first electrode 221b from below, and is made of a material having a chemical property more stable than that of the first electrode 221b, preferably one of molybdenum and titanium or a molybdenum-titanium alloy.
In the above embodiment, the upper surface of the first electrode layer 221 is lower than the upper surface of the passivation layer 22, and a portion of the second electrode layer 222 is filled in the first opening of the passivation layer 22. Since the barrier layer 221a is only disposed on the side of the first electrode 221b close to the substrate layer 21, in order to prevent the first electrode 221b from being corroded by water and oxygen, the second electrode layer 222 is further disposed on the side of the first electrode 221b away from the substrate layer 21. In order to ensure the blocking effect, the upper surface of the first electrode layer 221 is lower than the upper surface of the passivation layer 22, and meanwhile, since the second electrode layer 222 is in direct contact with the flexible circuit board, the first electrode 221b is electrically connected with the driving chip on the back of the display panel through the second electrode layer 222, and the second electrode layer 222 does not react with water and oxygen and has conductivity.
In a specific embodiment of the present invention, as shown in fig. 2, the display panel includes a display area and a non-display area, and the display area includes a substrate layer 21, a buffer layer 23, a light-shielding metal layer 231, a thin film transistor array layer, and a light-emitting device layer, which are sequentially stacked from bottom to top; the thin film transistor array layer comprises an active layer 241, a gate 243, a source drain 244, an interlayer dielectric layer 24, a gate insulating layer 242, a passivation layer 22 and a planarization layer 25 which are arranged from bottom to top; the light emitting device layer includes a pixel defining layer 26, an anode layer 223, an organic light emitting layer 261, and a cathode layer 262; the non-display region includes a first electrode layer 221 and a second electrode layer 222. The first electrode layer 221 includes the barrier layer 221a and the first electrode 221b stacked, and the second electrode layer 222 includes a second electrode. The material of the second electrode comprises at least one of indium gallium tin oxide, indium gallium zinc tin oxide and gallium tin oxide.
When the second electrode is made of indium gallium tin oxide, the second electrode is of a microcrystalline structure, has good conductivity and stability, is strong in acid resistance, can be etched by oxalic acid (H C O) and simultaneously (the etching speed is slow), is not corroded by silver acid (mixed acid of HNO3, H3PO4 and CH3 COOH), and preferably has the etching speed in the silver acid being less than or equal to that of the second electrode
Etch rate in oxalic acid is greater than or equal to
In the prior art, when the second electrode is an Indium tin Oxide, silver, an Indium tin Oxide structure or an Indium Gallium Zinc Oxide (IGZO), the Indium tin Oxide and the Indium Gallium Zinc Oxide in the silver and Indium Gallium Zinc Oxide structure are amorphous thin films, which can be etched by oxalic acid, but are also easily corroded by silver acid. Here, indium gallium tin oxide is given as an example only, and it is understood that indium gallium zinc tin oxide and gallium tin oxide are the same as indium gallium tin oxide in properties, and the same is also a preferable material.
In this embodiment, the buffer layer 23 is disposed on the substrate layer 21, the interlayer dielectric layer 24 is disposed between the buffer layer 23 and the passivation layer 22, and the planarization layer 25 and the pixel defining layer 26 are sequentially stacked on the passivation layer 22. The passivation layer 22 and the planarization layer 25 are further provided with a second opening, the second opening is located in the display region, the display panel further includes a third electrode layer 223, the third electrode layer 223 is filled in the second opening and covers a part of the surface of the planarization layer 25, the third electrode layer includes a third electrode 223a, a silver electrode 223b and an indium tin oxide electrode 223c which are sequentially stacked from bottom to top, and the material of the third electrode 223a includes at least one of the indium gallium tin oxide, the indium gallium zinc tin oxide and the gallium tin oxide electrode.
In some embodiments, the material of the second electrode and the material of the third electrode 223a are different materials satisfying the above embodiments, but in other embodiments, the material of the second electrode and the material of the third electrode 223a are the same in order to simplify the manufacturing process without adding an additional mask process. It is to be understood that the third electrode layer 223 is the anode layer 223.
In order to better manufacture the display panel in the embodiment of the present invention, on the basis of the display panel, the embodiment of the present invention further provides a manufacturing method of the display panel, which is used for manufacturing the display panel as described in the above embodiment.
As shown in fig. 3 and 4, fig. 3 is a schematic flow chart of a manufacturing method according to an embodiment of the present invention, and fig. 4A to 4G are schematic step-by-step diagrams of a manufacturing method according to an embodiment of the present invention. The preparation method of the display panel comprises the following steps:
s11, providing a substrate layer 21, and sequentially preparing a buffer layer 23, an interlayer dielectric layer 24, a passivation layer 22 and a planarization layer 25 on the substrate layer 21, wherein a first opening is formed in the passivation layer 22;
s12, preparing a first electrode layer 221 in the first opening of the passivation layer 22;
s13, preparing a second electrode layer 222 on the first electrode layer 221;
the second electrode layer 222 includes a second electrode, and a material of the second electrode includes at least one of indium gallium tin oxide, indium gallium zinc tin oxide, and gallium tin oxide.
Specifically, the step S3 of preparing the second electrode layer 222 further includes: a second electrode, a silver electrode and an indium tin oxide electrode sequentially formed on the first opening and the surface of the passivation layer 22;
preparing a first photoresist layer 271 on the indium tin oxide electrode, and etching the second electrode, the silver electrode and the indium tin oxide electrode which are not covered by the first photoresist layer 271;
ashing the first photoresist layer 271, and etching the silver electrode and the indium tin oxide electrode above the first opening to obtain the second electrode layer 222.
In this embodiment, the method further includes the step of preparing the third electrode layer 223: opening second openings in the passivation layer 22 and the planarization layer 25, and preparing the third electrode 223a, the silver electrode 223b and the indium tin oxide electrode 223c in the second openings and on the surface of the planarization layer 25;
preparing a second photoresist layer 272 on the ito electrode, and etching the third electrode 223a, the ag electrode 223b and the ito electrode 223c which are not covered by the second photoresist layer 272;
stripping the second photoresist layer 272;
wherein the material of the third electrode 223a is the same as the material of the second electrode.
Specifically, a first photo-masking process is used to prepare the second electrode, the silver electrode and the indium tin oxide electrode in the first opening, and prepare the third electrode 223a, the silver electrode 223b and the indium tin oxide electrode 223c in the second opening, respectively;
a second photo-masking process is used to prepare the first photo-resist layer 271 on the ITO electrode of the first opening and the second photo-resist layer 272 on the ITO electrode 223c of the second opening.
In this embodiment, the second electrode and the third electrode 223a are formed by the same photo-masking process, and the first photoresist layer 271 and the second photoresist layer 272 are formed by the same photo-masking process, so that the display panel can be prepared by the refining process without adding extra photo-masking process. Similarly, the first electrode layer 221 may also be manufactured by the same photomask process as the source/drain or the gate of the display region, which may further save the process steps.
Preferably, the first photoresist layer 271 and the second photoresist layer 272 are prepared by using a semi-permeable membrane mask, the thickness of the first photoresist layer 271 is D1, the thickness of the second photoresist layer 272 is D2, and D1 < D2. Since the first photoresist layer 271 needs to be ashed before the second photoresist layer 272 is stripped, in order to prevent the film layer covered by the second photoresist layer 272 from being damaged in the ashing and post-ashing processes, the thickness D1 of the first photoresist layer 271 is smaller than the thickness D2 of the second photoresist layer 272.
In a specific embodiment of the present invention, the method for manufacturing the display panel includes:
s21, providing a substrate layer 21, preparing a light-shielding metal layer 231, a buffer layer 23, an active layer 241, a gate insulating layer 242, a gate layer 243, a source-drain layer 244, an interlayer dielectric layer 24, a passivation layer 22, and the planarization layer 25 on the substrate layer 21, where the substrate layer 21 includes a display region and a non-display region, a first opening is opened in the passivation layer 22 in the non-display region, a second opening is opened in the passivation layer 22 and the planarization layer 25 in the display region, and the first electrode layer 221 is prepared in the first opening, as shown in fig. 4A;
s22, preparing an indium gallium tin oxide layer 223a, a silver layer 223B, and an indium tin oxide layer 223c on the first opening, the second opening, the passivation layer 22, and the surface of the planarization layer 25 by a first photo-masking process, as shown in fig. 4B;
s23, forming the first photoresist layer 271 over the first opening and the second photoresist layer 272 over the second opening by a semi-permeable membrane, as shown in fig. 4C;
s24, etching the indium-gallium-tin oxide layer 223a, the silver layer 223b, and the indium-tin oxide layer 223c not covered by the first photoresist layer 271 and the second photoresist layer 272, as shown in fig. 4D;
s25, ashing the first photoresist layer 271 with oxygen, as shown in fig. 4E;
s26, etching the silver layer 223b and the indium tin oxide layer 223c above the first opening to form the second electrode, as shown in fig. 4F;
s27, the second photoresist layer 272 is stripped to obtain the third electrode layer 223, as shown in fig. 4G.
In this embodiment, only the second electrode is indium gallium tin oxide, which is similar to the above case. In this embodiment, the second electrode layer 222 is prepared above the first electrode layer 221, and the second electrode layer 222 is made of a material resistant to silver acid corrosion to protect the first electrode layer 221 from water and oxygen. The second electrode layer 222 and the anode layer 223 are prepared by the same photomask, when the display panel is bonded with the chip on film, the second electrode layer 222 is in direct contact with the flexible circuit board, and the second electrode layer 222 and the flexible circuit board are firmly attached together without being influenced by time and deterioration conditions, so that the reliability of the display panel is improved.
In the above embodiments, the descriptions of the respective embodiments have respective emphasis, and parts that are not described in detail in a certain embodiment may refer to the above detailed descriptions of other embodiments, and are not described herein again. In a specific implementation, each unit or structure may be implemented as an independent entity, or may be combined arbitrarily to be implemented as one or several entities, and specific implementations of each unit, structure, or operation may refer to the foregoing method embodiments, which are not described herein again.
The above embodiments of the present invention are described in detail, and the principle and the implementation of the present invention are explained by applying specific embodiments, and the above description of the embodiments is only used to help understanding the method of the present invention and the core idea thereof; meanwhile, for those skilled in the art, according to the idea of the present invention, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present invention.
Claims (10)
1. A display panel, comprising:
a base layer including a display area and a non-display area disposed around the display area;
the passivation layer is arranged on one side of the substrate layer and is provided with a first opening, and the first opening is positioned in the non-display area;
the first electrode layer is arranged on one side, close to the substrate layer, in the first opening of the passivation layer;
the second electrode layer is arranged on the surface of one side, far away from the substrate layer, of the first electrode layer;
the second electrode layer comprises a second electrode, and the material of the second electrode comprises at least one of indium gallium tin oxide, indium gallium zinc tin oxide and gallium tin oxide.
2. The display panel according to claim 1, wherein the first electrode layer includes a first electrode and a barrier layer, the first electrode is disposed on a surface of the barrier layer on a side away from the substrate layer and is in contact with the second electrode layer, a material of the first electrode includes copper, and a material of the barrier layer includes one of molybdenum and titanium or a molybdenum-titanium alloy.
3. The display panel according to claim 1, wherein an upper surface of the first electrode layer is lower than an upper surface of the passivation layer, and a portion of the second electrode layer is filled in the first opening of the passivation layer.
4. The display panel according to claim 1, further comprising a buffer layer disposed on the base layer, an interlayer dielectric layer disposed between the buffer layer and the passivation layer, a planarization layer, and a pixel defining layer sequentially stacked on the passivation layer.
5. The display panel according to claim 4, wherein a second opening is further formed in the passivation layer and the planarization layer, the second opening is located in the display region, the display panel further comprises a third electrode layer, the third electrode layer is filled in the second opening and covers a part of the surface of the planarization layer, the third electrode layer comprises a third electrode, a silver electrode and an indium tin oxide electrode which are sequentially stacked from bottom to top, and a material of the third electrode comprises at least one of the indium gallium tin oxide, the indium gallium zinc tin oxide and the gallium tin oxide electrode.
6. A method for manufacturing a display panel, comprising:
providing a substrate layer, and sequentially preparing a buffer layer, an interlayer dielectric layer, a passivation layer and a planarization layer on the substrate layer, wherein a first opening is formed in the passivation layer;
preparing a first electrode layer in the first opening of the passivation layer;
preparing a second electrode layer on the first electrode layer;
the second electrode layer comprises a second electrode, and the material of the second electrode comprises at least one of indium gallium tin oxide, indium gallium zinc tin oxide and gallium tin oxide.
7. The production method according to claim 6, further comprising, in the step of producing the second electrode layer: a second electrode, a silver electrode and an indium tin oxide electrode are sequentially prepared on the first opening and the surface of the passivation layer;
preparing a first light resistance layer on the indium tin oxide electrode, and etching the second electrode, the silver electrode and the indium tin oxide electrode which are not covered by the first light resistance layer;
ashing the first light resistance layer, etching the silver electrode and the indium tin oxide electrode above the first opening.
8. The production method according to claim 6, further comprising a step of producing the third electrode layer: opening second openings in the passivation layer and the planarization layer, and preparing the third electrode, the silver electrode and the indium tin oxide electrode in the second openings and on the surface of the planarization layer;
preparing a second light resistance layer on the indium tin oxide electrode, and etching the third electrode, the silver electrode and the indium tin oxide electrode which are not covered by the second light resistance layer;
stripping the second photoresist layer;
wherein the material of the third electrode is the same as the material of the second electrode.
9. The method according to claim 7 or 8, wherein a first masking process is used to prepare the second electrode, the silver electrode and the indium tin oxide electrode in the first opening, and the third electrode, the silver electrode and the indium tin oxide electrode in the second opening, respectively;
and respectively preparing the first photoresist layer on the indium tin oxide electrode with the first opening and preparing the second photoresist layer on the indium tin oxide electrode with the second opening by adopting a second photomask process.
10. The method of claim 9, wherein the first photoresist layer and the second photoresist layer are formed using a semi-permeable membrane mask, and the thickness of the first photoresist layer is less than the thickness of the second photoresist layer.
Priority Applications (1)
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| CN112909200B (en) | 2022-07-12 |
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