CN112909122A - 一种改善硒化锑界面和能带结构的方法及硒化锑太阳能电池 - Google Patents
一种改善硒化锑界面和能带结构的方法及硒化锑太阳能电池 Download PDFInfo
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Abstract
本发明涉及一种改善硒化锑界面和能带结构的方法及硒化锑太阳能电池。改善硒化锑界面和能带结构的方法是通过水热法利用高压反应釜在硒化锑薄膜上沉积一层硫化铟；再利用化学水浴法，在硫化铟层之上沉积一层硫化镉，以形成带有硫化铟/硫化镉（In2S3/CdS）双缓冲层的硒化锑太阳能电池，利用硫化铟/硫化镉双缓冲层来改善硒化锑的异质结界面和形成更好的能带排列，使得硒化锑太阳能电池的缺陷更少，复合更少。本发明在薄膜沉积过程中，通过调控反应时间及其退火温度来制得更好的双缓冲层薄膜，与硒化锑更好的匹配形成最佳异质结。该工艺方法工艺简单，成本低廉，操作可控，厚度易控，适合进一步的推广与应用。
Description
技术领域
本发明涉及一种半导体薄膜的制备技术，具体地说涉及一种改善硒化锑界面和能带结构的方法及硒化锑太阳能电池。
背景技术
硒化锑（Sb2Se3）由于具有合适的带隙（1.1-1.3eV）、高吸收系数（105cm-1）、成本低及无毒等优点，被认为是一种很有前途的硫代化合物光伏器件吸收材料。硒化锑的一维晶体结构和各向异性光电子性质特征备受关注。
已知沿[001]方向的硒化锑（Sb2Se3）纳米棒阵列由于其强烈各向异性的一维晶体结构而迅速转移了光生载流子。它被认为是一种用于高效、低成本光伏设备的新型无毒吸收剂，具有竞争力。但是，元素在结界面处的相互扩散会限制其效率。通过改变工艺和结构，效率得到了极大的提高。目前，在硒化锑太阳能电池的结构中，普通的电子传输层包括缓冲层，例如SnO2，TiO2和CdS。然而，一些研究表明，具有缓冲单元的细胞比没有缓冲单元的缓冲单元具有更高的转化效率。具有高毒性的一些小组降低了CdS的厚度，并在CdS缓冲液的基础上引入了ZnO，TiO2和SnO2等缓冲层。两者都减少了CdS的含量，并提高了设备的性能。但是，由于硒化锑电池的开路电压存在缺陷，因此开路电压小于400mv，开路电压定义为Eg /q（其中Eg是带隙，q是电子电荷）。远远低于理论打开压力值。对于单一的CdS缓冲溶液，需要较高的pH值（pH> 10）来引发CdS沉淀并在吸收过程中形成均相成核[12]。然而，已经表明，Sb2Se3溶于碱性溶液，因此吸收体的表面被腐蚀，并引入了高密度的界面缺陷。而缺陷和复合是限制硒化锑器件开路电压的关键因素之一。
发明内容
本发明的目的之一就是提供一种改善硒化锑界面和能带结构的方法，以解决现有硒化锑太阳能电池能带不匹配、复合严重和缺陷较多等问题。
本发明的目的之二就是提供一种硒化锑太阳能电池，以减少太阳能电池的缺陷和复合，提高太阳能电池的开压和效率。
本发明的目的之一是这样实现的：一种改善硒化锑界面和能带结构的方法，通过水热法利用高压反应釜在硒化锑薄膜上沉积一层硫化铟；再利用化学水浴法，在硫化铟层之上沉积一层硫化镉，以形成带有硫化铟/硫化镉（In2S3/CdS）双缓冲层的硒化锑太阳能电池，利用硫化铟/硫化镉双缓冲层来改善硒化锑的异质结界面和形成更好的能带排列，使得硒化锑太阳能电池的缺陷更少，复合更少。
所述硒化锑薄膜为沉积钼背电极的硒化锑。
沉积硫化铟层的水热反应是，将0.45g的的硫代乙酰胺和0.438g的氯化铟以及1.26g柠檬酸配合成溶液，放入高压反应釜中，在80℃温度下沉积90~120min。
沉积硫化镉层的化学水浴反应是，向585 ml去离子水中加入15 mM硫酸镉（CdSO4）、37 mM硫脲和58.9 ml浓度为28％的氨水，配合成溶液，放入水浴锅中，在70℃温度下沉积7min。
本发明的目的之二这样实现的：一种硒化锑太阳能电池，在所述硒化锑太阳能电池中包含有前述方法所制备的硫化铟/硫化镉（In2S3/CdS）双缓冲层。
具体的，所述硒化锑太阳能电池为层状结构，由下到上依次为玻璃衬底、钼电极层、硒化锑薄膜层、硫化铟层、硫化镉层、氧化锌层和掺铝氧化锌层。
本发明在薄膜沉积过程中，通过调控反应时间和退火温度来制得双缓冲层，这种双缓冲层结构能够与硒化锑薄膜更好地匹配形成最佳异质结。本发明方法工艺简单，成本低廉，操作可控，厚度易控，适于推广应用。
本发明的硫化铟/硫化镉双缓冲层结构可有效地减少复合，减少缺陷，增加了载流子寿命，并可大幅提高开压。相比现有技术，本发明的优势具体体现在以下几点：
1、制备方法简单，制备过程中，反应温度和反应时间完全可调；
2、制备过程无污染，不会产生有毒产物；
3、通过加入硫化铟后可大幅减少有害元素——Cd元素的加入量。
4、通过调整硫化铟/硫化镉的反应时间可调控其生成厚度，从而能够精确调控异质结的能带排列，从而减少太阳能电池的缺陷和复合，提高太阳能电池的开压和效率。
附图说明
图1是本发明硒化锑太阳能电池的结构示意图。
图2 是In2S3/CdS双缓冲层薄膜的能带结构示意图。
图3是本发明硒化锑太阳能电池的I-V图。
图中，1、玻璃衬底，2、钼电极层，3、硒化锑薄膜层，4、硫化铟层，5、硫化镉层，6、氧化锌层，7、掺铝氧化锌层。
具体实施方式
实施例1：
本发明改善硒化锑界面和能带结构的方法包括以下步骤：
a、以沉积了钼背电极的硒化锑为衬底，衬底面积为5×2.5cm2，将0.45g硫代硫酸钠、0.438g氯化铟和1.26g柠檬酸加入60ml去离子水中，充分搅拌，将混合溶液放入盛装有100ml聚四氟乙烯的瓶体中，并将其放入高压反应釜中，在80℃下加热100min，之后立即取出，分别用去离子水和酒精冲洗，将其放入加热台，100℃退火30分钟，形成一层约20nm厚的硫化铟层。
b、取出沉积了硫化铟层的衬底，将衬底固定到水浴锅的架子中，向585ml去离子水中加入15 mM硫酸镉（CdSO4）和37 mM硫脲和58.9 ml氨水（28％），配合成溶液，倒入水浴锅中，并将装有硫化铟的架子放入水浴锅中，此时水浴锅的温度为70℃，水浴时间为7min ，取出后用去离子水清洗，并用氮气吹干，形成一层约20nm厚的硫化镉层。
如图2所示，对制备的双缓冲层硒化锑进行XPS以及UPS测试能带变化，随着In2S3/CdS双缓冲层的加入导带底的位置不断升高，减少了载流子的复合。
实施例2：
本发明硒化锑太阳能电池是在硒化锑太阳能电池中包含有上述方法所制备的硫化铟/硫化镉（In2S3/CdS）双缓冲层。
如图1所示，本发明硒化锑太阳能电池为层状结构，由下到上依次为玻璃衬底1、钼电极层2、硒化锑纳米棒层3（生长在钼背电极上）、硫化铟层4、硫化镉层5、氧化锌层6和掺铝氧化锌层7，其中的第4、5、6、7层依次均包裹在硒化锑纳米棒3上。
本发明硒化锑太阳能电池的制备方式如下：
1、衬底的准备：使用玻璃作为衬底，大小为5×5cm2，首先将玻璃在电子清洗剂溶液中浸泡12h，然后将其取出后用去离子水冲洗干净，最后用氮气吹干。
2、沉积钼背电极：采用磁控溅射技术制备Mo背电极，采用Ar气作为反应气体，溅射气压为0.3 Pa，溅射功率密度约为4 W/cm2，制备的薄膜厚度约为700 nm，制备的薄膜电阻率约为3×10-5Ω•cm。
3、沉积硒化锑层：采用近空间升华（CSS）工艺沉积硒化锑层。选择沉积了银层的样品为衬底，衬底温度设置为320℃，将高纯固态硒化锑颗粒研磨成粉末作为蒸发源，硒化锑源温度设置为510℃。在真空度为10-1Pa下开始沉积，制备的薄膜厚度大约为1200nm。
4、沉积硫化铟层：采用水热法沉积硫化铟层，将样品放入氯化铟，硫代乙酰胺和柠檬酸按一定比例配制的溶液中，将溶液放入高压反应釜中并将反应釜放入烘箱中，反应温度为80℃。
5、沉积硫化镉层：采用化学水浴法沉积硫化镉层，将样片放入镉盐、硫脲、氨水和缓冲剂按一定比例配制而成的溶液中，溶液置于恒温水浴锅中恒温70℃并均匀搅拌7min，制得厚度约为20 nm的硫化镉。
6、沉积本征ZnO层：采用磁控溅射技术沉积本征ZnO层，溅射功率密度为1W/cm2，溅射靶材选择纯度为4N的本征ZnO靶材，选择Ar气作为溅射气体，溅射气压约为0.5Pa，衬底温度为常温，厚度约为50 nm。
7、沉积掺铝的氧化锌层：采用磁控溅射技术沉积掺铝氧化锌层，溅射功率密度为1W/cm2，溅射靶材选择纯度为4N的掺铝ZnO靶材，选择Ar气作为溅射气体，溅射气压约为0.2Pa，衬底温度为常温，厚度约为300 nm。
Claims (6)
1.一种改善硒化锑界面和能带结构的方法，其特征是，通过水热法利用高压反应釜在硒化锑薄膜上沉积一层硫化铟；再利用化学水浴法，在硫化铟层之上沉积一层硫化镉，以形成带有硫化铟/硫化镉双缓冲层的硒化锑太阳能电池，利用硫化铟/硫化镉双缓冲层改善硒化锑的异质结界面和能带排列。
2.根据权利要求1所述的改善硒化锑界面和能带结构的方法，其特征是，所述硒化锑薄膜为沉积钼背电极的硒化锑。
3.根据权利要求1所述的改善硒化锑界面和能带结构的方法，其特征是，沉积硫化铟层的水热反应是，将0.45g的的硫代乙酰胺和0.438g的氯化铟以及1.26g柠檬酸配合成溶液，放入高压反应釜中，在80℃温度下沉积90~120min。
4.根据权利要求1所述的改善硒化锑界面和能带结构的方法，其特征是，沉积硫化镉层的化学水浴反应是，向585 ml去离子水中加入15 mM硫酸镉、37 mM硫脲和58.9 ml浓度为28％的氨水，配合成溶液，放入水浴锅中，在70℃温度下沉积7min。
5.一种硒化锑太阳能电池，其特征是，在硒化锑太阳能电池中包含有权利要求1~4任一权利要求所述方法所制备的硫化铟/硫化镉双缓冲层。
6.根据权利要求5所述的硒化锑太阳能电池，其特征是，所述太阳能电池为层状结构，由下到上依次为玻璃衬底、钼电极层、硒化锑薄膜层、硫化铟层、硫化镉层、氧化锌层和掺铝氧化锌层。
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140202527A1 (en) * | 2013-01-23 | 2014-07-24 | Research & Business Foundation Sungkyunkwan University | Solar cell and method of manufacturing the solar cell |
| CN104659123A (zh) * | 2013-11-25 | 2015-05-27 | 华中科技大学 | 化合物薄膜太阳能电池及其制备方法 |
| US20170301481A1 (en) * | 2016-04-15 | 2017-10-19 | National Taiwan University Of Science And Technology | Quantum dots-sensitized solar cell and method of enhancing the optoelectronic performance of a quantum dots-sensitized solar cell using a co-adsorbent |
| CN108123000A (zh) * | 2017-12-08 | 2018-06-05 | 河北大学 | 一种纳米棒型硒化锑太阳电池及其制备方法 |
| CN110534591A (zh) * | 2019-08-21 | 2019-12-03 | 西北工业大学 | 一种硒化锑薄膜太阳能电池及制备方法 |
-
2021
- 2021-01-13 CN CN202110042108.7A patent/CN112909122B/zh active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140202527A1 (en) * | 2013-01-23 | 2014-07-24 | Research & Business Foundation Sungkyunkwan University | Solar cell and method of manufacturing the solar cell |
| CN104659123A (zh) * | 2013-11-25 | 2015-05-27 | 华中科技大学 | 化合物薄膜太阳能电池及其制备方法 |
| US20170301481A1 (en) * | 2016-04-15 | 2017-10-19 | National Taiwan University Of Science And Technology | Quantum dots-sensitized solar cell and method of enhancing the optoelectronic performance of a quantum dots-sensitized solar cell using a co-adsorbent |
| CN108123000A (zh) * | 2017-12-08 | 2018-06-05 | 河北大学 | 一种纳米棒型硒化锑太阳电池及其制备方法 |
| CN110534591A (zh) * | 2019-08-21 | 2019-12-03 | 西北工业大学 | 一种硒化锑薄膜太阳能电池及制备方法 |
Non-Patent Citations (2)
| Title |
|---|
| CHANG LIU等: "A dendritic Sb2Se3/In2S3 heterojunction nanorod array photocathode decorated with a MoSx catalyst for efficient solar hydrogen evolution", 《JOURNAL OF MATERIALS CHEMISTRY A》 * |
| JOEL VAN EMBDEN等: "Solution-Processed CuSbS2 Thin Films and Superstrate Solar Cells with CdS/In2S3 Buffer Layers", 《ACS APPLIED ENERGY MATERIALS》 * |
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